CN106205733A - The block restorative procedure of a kind of Multi plane structure nonvolatile memory and device - Google Patents
The block restorative procedure of a kind of Multi plane structure nonvolatile memory and device Download PDFInfo
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- CN106205733A CN106205733A CN201610548152.4A CN201610548152A CN106205733A CN 106205733 A CN106205733 A CN 106205733A CN 201610548152 A CN201610548152 A CN 201610548152A CN 106205733 A CN106205733 A CN 106205733A
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- 230000015654 memory Effects 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 54
- 230000008439 repair process Effects 0.000 claims abstract description 124
- 238000007689 inspection Methods 0.000 claims description 9
- 241000239290 Araneae Species 0.000 claims description 5
- 238000005067 remediation Methods 0.000 abstract description 5
- 238000011084 recovery Methods 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
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- Techniques For Improving Reliability Of Storages (AREA)
Abstract
The invention provides block restorative procedure and the device of a kind of Multi plane structure nonvolatile memory, wherein, described method includes whether to need to repair to judge step: carry out division operation to each selecting a block in each plane of Multi plane structure nonvolatile memory simultaneously, the block wiped in judging each plane is the most successful, if there being unsuccessful piece of erasing, then need it is repaired；Repair step: carry out repairing operation to each plane at unsuccessful piece of place of described erasing simultaneously, erasing block successfully other plane is allowed to wait, traversal step: after described reparation step completes, each plane described is traveled through each block, judge the operation of step the need of repairing and repair described in repeating, until completing the traversal of block.The present invention existing to block recovery technique on the basis of by the block reparation of each plane using same state machine to realize Multi plane structure nonvolatile memory simultaneously, be effectively improved the block remediation efficiency of Multi plane structure nonvolatile memory.
Description
Technical field
The present invention relates to chip-stored technical field, particularly relate to a kind of Multi-plane structure non-volatile memories
The block restorative procedure of device and device.
Background technology
Nonvolatile memory goes wrong owing to technique or natural cause may result in block in process of production, this
It is accomplished by test process, block being repaired, improves the yield of chip.
Plane is the framework within nonvolatile memory, the unit of the control unit management of nonvolatile memory.Non-
If only 1 plane of volatile memory, it is exactly only one of which control unit, therefore can only do something simultaneously, non-volatile
If property memorizer has 2 or multiple plane, it is exactly 2 or multiple control unit, can do 2 things or more than one piece simultaneously
Thing, such as can reading and writing simultaneously and erasing.The nonvolatile memory of Multi-plane structure the most multiple plane structure occurs
After, according to the existing flow process doing block reparation can only check and repair by plane one by one, therefore can roll up test phase and do block
The time repaired.
Visible, for Multi-plane structure nonvolatile memory, problem present in existing piece of restorative procedure
For: multiple plane can not be supported simultaneously to check and do block reparation.
Summary of the invention
The invention provides block restorative procedure and the device of a kind of Multi-plane structure nonvolatile memory, to solve
Certainly prior art can not be supported check multiple plane simultaneously and do block reparation, the problem that remediation efficiency is low.
In order to solve the problems referred to above, the block that the invention discloses a kind of Multi-plane structure nonvolatile memory is repaiied
Compound recipe method, it is characterised in that including:
Step is judged: each in each plane to Multi-plane structure nonvolatile memory the need of repairing
Carry out division operation, it is judged that the block wiped in each plane is the most successful, if there being erasing from selecting a block simultaneously
Unsuccessful piece, then need it is repaired；
Repair step: carry out each plane at unsuccessful piece of place of described erasing repairing operation simultaneously, allow erasing
Block successfully other plane waits, described reparation carries out follow-up step after having operated again；
Traversal step: after described reparation step completes, travels through each block to each plane described, described in repetition is
No needs repairs the operation judging step, if there being unsuccessful piece of erasing all to repair by described reparation step, until complete
The traversal of in bulk.
Preferably, described reparation step also includes: replaces and repairs step: each plane described carries out repairing behaviour simultaneously
Make, be that the block using redundancy in each plane replaces unsuccessful piece of described erasing
Preferably, described the need of repair judge that step may include that
Two plane judge step: non-easily to the Multi-plane structure comprising two plane of plane0 and plane1
Each selecting a block to carry out division operation in each plane of the property lost memorizer, result is it is possible that four kinds of feelings simultaneously
Condition:
The first situation, plane0 wipes unsuccessfully plane1 and wipes successfully: at this moment need to repair this block of plane0
Multiple, after plane1 waits that plane0 finishes reparation, it is further continued for carrying out repair process below；
The second situation, plane0 wipes successfully plane1 and wipes unsuccessfully: at this moment need this erroneous block to plane1
Repair, after plane0 waits that plane1 finishes reparation, be further continued for carrying out repair process below；
The third situation, plane0 wipes unsuccessfully plane1 and wipes unsuccessfully: at this moment need simultaneously to plane0 and plane1
Erroneous block reparation, repair process synchronizes to carry out, but it is different to repair the speed degree terminated, then first finishes and repaiies
Multiple need to wait that another one plane also finishes reparation after, be further continued for carrying out process below；
4th kind of situation, plane0 wipes successfully plane1 and wipes successfully: at this moment need not enter plane0 and plane1
Row is repaired, and directly carries out the inspection of the block of next address.
Preferably, use same state machine to realize each of Multi-plane structure nonvolatile memory simultaneously
The block reparation of plane, described the need of repair judge step before, also include:
Use same state machine control signals design procedure: each plane is designed with a control signal and determines
This plane whether is chosen to be made whether to need to repair to judge step, reparation step and traversal step.
In order to solve the problems referred to above, the invention also discloses the block of a kind of Multi-plane structure nonvolatile memory
Prosthetic device, including:
The need of repairing judge module, for each plane to Multi-plane structure nonvolatile memory
One block of interior each selection carries out division operation simultaneously, it is judged that the block wiped in each plane is the most successful, if had
Wipe unsuccessful piece, then need it is repaired；
Repair step: carry out each plane at unsuccessful piece of place of described erasing repairing operation simultaneously, allow erasing
Block successfully other plane waits, described reparation carries out follow-up step after having operated again；
Spider module: after described reparation step completes, travels through each block to each plane described, repeats institute
State the need of repairing the operation judging step, if there being unsuccessful piece of erasing all to repair, directly by described reparation step
To the traversal completing block.
Preferably, described repair module can include replacing repair module: repair for each plane described simultaneously
Multiple operation, is that the block using redundancy in each plane replaces unsuccessful piece of described erasing.
Preferably, described the need of repair judge module may include that
Two plane judge modules, for the Multi-plane structure comprising two plane of plane0 and plane1
Each selecting a block to carry out division operation in each plane of nonvolatile memory, result is it is possible that four simultaneously
The situation of kind:
The first situation, plane0 wipes unsuccessfully plane1 and wipes successfully: at this moment need to repair this block of plane0
Multiple, after plane1 waits that plane0 finishes reparation, it is further continued for carrying out repair process below；
The second situation, plane0 wipes successfully plane1 and wipes unsuccessfully: at this moment need this erroneous block to plane1
Repair, after plane0 waits that plane1 finishes reparation, be further continued for carrying out repair process below；
The third situation, plane0 wipes unsuccessfully plane1 and wipes unsuccessfully: at this moment need simultaneously to plane0 and plane1
Erroneous block reparation, repair process synchronizes to carry out, but it is different to repair the speed degree terminated, then first finishes and repaiies
Multiple need to wait that another one plane also finishes reparation after, be further continued for carrying out process below；
4th kind of situation, plane0 wipes successfully plane1 and wipes successfully: at this moment need not enter plane0 and plane1
Row is repaired, and directly carries out the inspection of the block of next address.
Preferably, described device can also include:
Use same state machine control signals to design module, be used for using same state machine to realize Multi-simultaneously
The block reparation of each plane of plane structure nonvolatile memory, described the need of repair judge step before,
Each plane is designed with a control signal decide whether to choose this plane be made whether to need to repair judge step,
Repair step and traversal step.
Compared with prior art, the invention have the advantages that
The block restorative procedure of the Multi-plane structure nonvolatile memory that the embodiment of the present invention provides and device,
Existing on the basis of block recovery technique by use same state machine realize Multi-plane structure nonvolatile memory
Each plane block while repair, solve prior art and can not support multiple plane are checked simultaneously
With do block repair problem, be effectively improved the block remediation efficiency of Multi-plane structure nonvolatile memory.
Accompanying drawing explanation
Fig. 1 is the block reparation side of a kind of Multi-plane structure nonvolatile memory of according to embodiments of the present invention
The flow chart of steps of method；
Fig. 2 is the block reparation side of a kind of Multi-plane structure nonvolatile memory of according to embodiments of the present invention two
The flow chart of steps of method；
Fig. 3 is the block reparation side of a kind of Multi-plane structure nonvolatile memory of according to embodiments of the present invention three
The flow chart of steps of method；
Fig. 4 is the block reparation dress of a kind of Multi-plane structure nonvolatile memory of according to embodiments of the present invention four
The structured flowchart put；
Fig. 5 is the block reparation dress of a kind of Multi-plane structure nonvolatile memory of according to embodiments of the present invention five
The structured flowchart put；
Fig. 6 is the block reparation dress of a kind of Multi-plane structure nonvolatile memory of according to embodiments of the present invention six
The structured flowchart put；
Fig. 7 is the state machine use flow chart of according to embodiments of the present invention six.
Detailed description of the invention
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, real with concrete below in conjunction with the accompanying drawings
The present invention is further detailed explanation to execute mode.
Embodiment one
With reference to Fig. 1, it is shown that the block of a kind of Multi-plane structure nonvolatile memory of the embodiment of the present invention one is repaiied
The flow chart of steps of compound recipe method.
The block restorative procedure of the Multi-plane structure nonvolatile memory of the embodiment of the present invention comprises the following steps:
Step S101 is judged: each plane to Multi-plane structure nonvolatile memory the need of repairing
One block of interior each selection carries out division operation, i.e. to identical address in each plane or the block of different address simultaneously
Wiping, it is judged that the block wiped in each plane is the most successful simultaneously, if there being unsuccessful piece of erasing, then needing
It is repaired；
Before Multi-plane structure nonvolatile memory dispatches from the factory, need each to select one in each of which plane
Block carries out division operation simultaneously, it is judged that whether the block that each plane is wiped can correctly be wiped, if there being erasing not become
The block of merit, then need to repair it.
Repair step S102: carry out repairing operation to each plane at unsuccessful piece of place of described erasing simultaneously, allow
Erasing block successfully other plane waits, described reparation carries out follow-up step after having operated again；
Wherein, carrying out repairing and i.e. carry out block replacement, restorative procedure can be entered according to the actual requirements by those skilled in the art
Row is arranged, and this is not specifically limited by the present invention.
Traversal step S103: after described reparation step completes, travels through each block to each plane described, repeats institute
State the need of repairing the operation judging step, if there being unsuccessful piece of erasing all to repair by described reparation step,
Until completing the traversal of block.
By the block restorative procedure of the Multi-plane structure nonvolatile memory that the embodiment of the present invention provides, it is achieved
Multiple plane are done block inspection simultaneously and do block reparation, thus solving the problem that remediation efficiency is low.
Embodiment two
With reference to Fig. 2, it is shown that the block of a kind of Multi-plane structure nonvolatile memory of the embodiment of the present invention two is repaiied
The flow chart of steps of compound recipe method.
The block restorative procedure of the Multi-plane structure nonvolatile memory of the embodiment of the present invention comprises the following steps:
Step S201 is judged: each plane to Multi-plane structure nonvolatile memory the need of repairing
One block of interior each selection carries out division operation, i.e. to identical address in each plane or the block of different address simultaneously
Wiping, it is judged that the block wiped in each plane is the most successful simultaneously, if there being unsuccessful piece of erasing, then needing
It is repaired；
Before Multi-plane structure nonvolatile memory dispatches from the factory, need each to select one in each of which plane
Block carries out division operation simultaneously, it is judged that whether the block that each plane is wiped can correctly be wiped, if there being erasing not become
The block of merit, then need to repair it.
Repair step S202: carry out repairing operation to each plane at unsuccessful piece of place of described erasing simultaneously, allow
Erasing block successfully other plane waits, described reparation carries out follow-up step after having operated again；
Wherein, carrying out repairing and i.e. carry out block replacement, restorative procedure can be entered according to the actual requirements by those skilled in the art
Row is arranged, and this is not specifically limited by the present invention.
Preferably, described reparation step S202 can also include: replaces and repairs step S2021: each plane described is same
Shi Jinhang repairs operation, is that the block using redundancy in each plane replaces unsuccessful piece of described erasing.
Traversal step S203: after described reparation step completes, travels through each block to each plane described, repeats institute
State the need of repairing the operation judging step, if there being unsuccessful piece of erasing all to repair, directly by described reparation step
To the traversal completing block.
The embodiment of the present invention is compared with embodiment one, and difference is, optimizes the content repairing step S202, carries out
Replacing and repair step S2021, each plane described carries out repairing operation simultaneously, uses redundancy in each plane
Block replaces unsuccessful piece of described erasing.Therefore can ensure that block repairs accuracy.
Embodiment three
With reference to Fig. 3, it is shown that the block of a kind of Multi-plane structure nonvolatile memory of the embodiment of the present invention three is repaiied
The flow chart of steps of compound recipe method.
The block restorative procedure of the Multi-plane structure nonvolatile memory of the embodiment of the present invention comprises the following steps:
Step S301 is judged: each plane to Multi-plane structure nonvolatile memory the need of repairing
One block of interior each selection carries out division operation, i.e. to identical address in each plane or the block of different address simultaneously
Wiping, it is judged that the block wiped in each plane is the most successful simultaneously, if there being unsuccessful piece of erasing, then needing
It is repaired；
Repair step S302: carry out repairing operation to each plane at unsuccessful piece of place of described erasing simultaneously, allow
Erasing block successfully other plane waits, described reparation carries out follow-up step after having operated again；
Wherein, carrying out repairing and i.e. carry out block replacement, restorative procedure can be entered according to the actual requirements by those skilled in the art
Row is arranged, and this is not specifically limited by the present invention.
Preferably, described reparation step S302 can also include:
Replace and repair step S3021: each plane described carries out repairing operation, is to make in each plane simultaneously
Unsuccessful piece of described erasing is replaced with the block of redundancy.
Traversal step S303: after described reparation step completes, travels through each block to each plane described, repeats institute
State the need of repairing the operation judging step, if there being unsuccessful piece of erasing all to repair, directly by described reparation step
To the traversal completing block.
Preferably, see Fig. 3, described judge that step S301 may include that the need of repairing
Two plane judge step S3011: to the Multi-plane structure comprising two plane of plane0 and plane1
Each selecting a block to carry out division operation in each plane of nonvolatile memory, result is it is possible that four simultaneously
The situation of kind:
The first situation, plane0 wipes unsuccessfully plane1 and wipes successfully: at this moment need to repair this block of plane0
Multiple, after plane1 waits that plane0 finishes reparation, it is further continued for carrying out repair process below；
The second situation, plane0 wipes successfully plane1 and wipes unsuccessfully: at this moment need this erroneous block to plane1
Repair, after plane0 waits that plane1 finishes reparation, be further continued for carrying out repair process below；
The third situation, plane0 wipes unsuccessfully plane1 and wipes unsuccessfully: at this moment need simultaneously to plane0 and plane1
Erroneous block reparation, repair process synchronizes to carry out, but it is different to repair the speed degree terminated, then first finishes and repaiies
Multiple need to wait that another one plane also finishes reparation after, be further continued for carrying out process below；
4th kind of situation, plane0 wipes successfully plane1 and wipes successfully: at this moment need not enter plane0 and plane1
Row is repaired, and directly carries out the inspection of the block of next address.
Preferably, use same state machine to realize each of Multi-plane structure nonvolatile memory simultaneously
The block reparation of plane, described the need of repair judge step S301 before, also include:
Use same state machine control signals design procedure S3010: each plane is designed with a control signal
Decide whether to choose this plane to be made whether to need to repair to judge step, reparation step and traversal step.
Need exist for explanation, when using same state machine, require to do to each plane design control signal
To: when this plane is operated by needs, designing this control signal is 1, it is possible to access this plane；When need not
Operating this plane or when this plane waits, designing this control signal is 0, thus cannot access this
plane.According to this method for designing, the block reparation of Multi-plane structure nonvolatile memory is i.e. to share a state machine
Realizing, needing to wait, if there being a plane repair process if there being any one plane to do reparation another one plane
Carry out is fast, after another one plane to be waited has been carried out, just can be further continued for subsequent step.
The embodiment of the present invention is compared with embodiment two, and difference is, optimizes further and judges the need of repairing
The content of step S301, comprises as a example by two plane by Multi-plane structure nonvolatile memory, it is also possible to include two
Individual plane judges step S3011: deposit the Multi-plane structure comprising two plane of plane0 and plane1 is non-volatile
Each select a block to carry out division operation in each plane of reservoir simultaneously, give result it is possible that four kinds
Situation and processing method thereof；Also furthermore present the same state machine of use, to realize Multi-plane structure non-volatile simultaneously
Property memorizer each plane block repair situation, described the need of repair judge step S301 before, also increase
Use same state machine control signals design procedure S3010: each plane is designed with a control signal determines and be
No this plane is chosen to be made whether to need to repair to judge step, reparation step and traversal step.
Embodiment four
With reference to Fig. 4, it is shown that the block of a kind of Multi-plane structure nonvolatile memory of the embodiment of the present invention four is repaiied
The structured flowchart of apparatus for coating.
The block repair apparatus of the Multi-plane structure nonvolatile memory of the embodiment of the present invention includes:
The need of repairing judge module 401, for each of Multi-plane structure nonvolatile memory
Each select a block to carry out division operation, i.e. to identical address in each plane or the block of different address in plane simultaneously
All can wipe, it is judged that the block wiped in each plane is the most successful simultaneously, if there being unsuccessful piece of erasing,
Then need it is repaired；
Repair module 402: grasp for carrying out repairing to each plane at unsuccessful piece of place of described erasing simultaneously
Making, allow erasing block successfully other plane wait, described reparation carries out follow-up step after having operated again；
Spider module 403: after described reparation step completes, travels through each block to each plane described, repeats
Described the need of repairing the operation judging step, if there being unsuccessful piece of erasing all to repair by described reparation step,
Until completing the traversal of block.
By the block repair apparatus of the Multi-plane structure nonvolatile memory that the embodiment of the present invention provides, it is achieved
Multiple plane are done block inspection simultaneously and do block reparation, thus solving the problem that remediation efficiency is low.
Embodiment five
With reference to Fig. 5, it is shown that the block of a kind of Multi-plane structure nonvolatile memory of the embodiment of the present invention five is repaiied
The structured flowchart of apparatus for coating.
The block repair apparatus of the Multi-plane structure nonvolatile memory of the embodiment of the present invention is to embodiment four
The further optimization of block repair apparatus, the block repair apparatus after optimization includes:
The need of repairing judge module 501, for each of Multi-plane structure nonvolatile memory
Each select a block to carry out division operation, i.e. to identical address in each plane or the block of different address in plane simultaneously
All can wipe, it is judged that the block wiped in each plane is the most successful simultaneously, if there being unsuccessful piece of erasing,
Then need it is repaired；
Repair module 502: grasp for carrying out repairing to each plane at unsuccessful piece of place of described erasing simultaneously
Making, allow erasing block successfully other plane wait, described reparation carries out follow-up step after having operated again；
Preferably, described repair module 502 may include that
Replace repair module S5021: carry out for each plane described repairing operation simultaneously, be at each plane
The block of interior use redundancy replaces unsuccessful piece of described erasing.
Spider module 503: after described reparation step completes, travels through each block to each plane described, repeats
Described the need of repairing the operation judging step, if there being unsuccessful piece of erasing all to repair by described reparation step,
Until completing the traversal of block.
The block repair apparatus of the Multi-plane structure nonvolatile memory that the embodiment of the present invention provides is before realizing
State corresponding restorative procedure in embodiment two, and there is the beneficial effect of corresponding embodiment of the method, do not repeat them here.
Embodiment six
With reference to Fig. 6, it is shown that the block of a kind of Multi-plane structure nonvolatile memory of the embodiment of the present invention six is repaiied
The structured flowchart of apparatus for coating.
The block repair apparatus of the Multi-plane structure nonvolatile memory of the embodiment of the present invention is to embodiment five
The further optimization of block repair apparatus, the block repair apparatus after optimization includes:
The need of repairing judge module S601, for each of Multi-plane structure nonvolatile memory
Each select a block to carry out division operation, i.e. to identical address in each plane or the block of different address in plane simultaneously
All can wipe, it is judged that the block wiped in each plane is the most successful simultaneously, if there being unsuccessful piece of erasing,
Then need it is repaired；
Repair module S602: grasp for carrying out repairing to each plane at unsuccessful piece of place of described erasing simultaneously
Making, allow erasing block successfully other plane wait, described reparation carries out follow-up step after having operated again；
Preferably, described repair module S602 may include that
Replace repair module S6021: carry out for each plane described repairing operation simultaneously, be at each plane
The block of interior use redundancy replaces unsuccessful piece of described erasing.
Spider module S603: after described reparation step completes, travels through each block to each plane described, weight
Multiple described the need of repairing the operation judging step, if there being unsuccessful piece of erasing all to repair by described reparation step
Multiple, until completing the traversal of block.
Preferably, if needing to repair judge module S601 can also include:
Two plane judge module S6011, for the Multi-plane comprising two plane of plane0 and plane1
Each selecting a block to carry out division operation in each plane of structure nonvolatile memory, result may go out simultaneously
Existing four kinds of situations:
The first situation, plane0 wipes unsuccessfully plane1 and wipes successfully: at this moment need to repair this block of plane0
Multiple, after plane1 waits that plane0 finishes reparation, it is further continued for carrying out repair process below；
The second situation, plane0 wipes successfully plane1 and wipes unsuccessfully: at this moment need this erroneous block to plane1
Repair, after plane0 waits that plane1 finishes reparation, be further continued for carrying out repair process below；
The third situation, plane0 wipes unsuccessfully plane1 and wipes unsuccessfully: at this moment need simultaneously to plane0 and plane1
Erroneous block reparation, repair process synchronizes to carry out, but it is different to repair the speed degree terminated, then first finishes and repaiies
Multiple need to wait that another one plane also finishes reparation after, be further continued for carrying out process below；
4th kind of situation, plane0 wipes successfully plane1 and wipes successfully: at this moment need not enter plane0 and plane1
Row is repaired, and directly carries out the inspection of the block of next address.
Preferably, described device can also include:
Use same state machine control signals to design module S6010, be used for using same state machine to realize simultaneously
The block reparation of each plane of Multi-plane structure nonvolatile memory, judges step described the need of repairing
Before S601, each plane is designed with a control signal and decides whether to choose this plane to be made whether to need to repair
Judge step, repair step and traversal step.
The block repair apparatus of the Multi-plane structure nonvolatile memory that the embodiment of the present invention provides is before realizing
State corresponding block restorative procedure in embodiment three, and there is the beneficial effect of corresponding embodiment of the method, do not repeat them here.
Need at this explanatory diagram 7 be according to embodiments of the present invention six state machine use flow chart, state machine by this design
The inspection that comprises the Multi-plane structure nonvolatile memory of two plane of plane0 and plane1 and repair two
The flow process of plane.
Each embodiment in this specification all uses the mode gone forward one by one to describe, what each embodiment stressed is with
The difference of other embodiments, between each embodiment, identical similar part sees mutually.For system embodiment
For, due to itself and embodiment of the method basic simlarity, so describe is fairly simple, relevant part sees the portion of embodiment of the method
Defend oneself bright.
Block restorative procedure and dress to a kind of Multi-plane structure nonvolatile memory provided by the present invention above
Putting to have gone and be discussed in detail, principle and the embodiment of the present invention are set forth by specific case used herein, above reality
The explanation executing example is only intended to help to understand method and the core concept thereof of the present invention；General technology simultaneously for this area
Personnel, according to the thought of the present invention, the most all will change, in sum, and this theory
Bright book content should not be construed as limitation of the present invention.
Claims (10)
1. the block restorative procedure of a Multi-plane structure nonvolatile memory, it is characterised in that including:
Step is judged: each free in each plane to Multi-plane structure nonvolatile memory the need of repairing
Select a block and carry out division operation simultaneously, it is judged that the block wiped in each plane is the most successful, if there being erasing not become
The block of merit, then need to repair it；
Repair step: carry out repairing operation to each plane at unsuccessful piece of place of described erasing simultaneously, allow erasing block become
Other plane of merit waits, described reparation carries out follow-up step after having operated again；
Whether traversal step: after described reparation step completes, travel through each block to each plane described, need described in repetition
Repair the operation judging step, if having unsuccessful piece of erasing all to repair by described reparation step, until completing block
Traversal.
Method the most according to claim 1, it is characterised in that described reparation step also includes:
Replace and repair step: each plane described carries out repairing operation, uses redundancy in each plane simultaneously
Block replaces unsuccessful piece of described erasing.
Method the most according to claim 1 and 2, it is characterised in that described the need of repair judge that step may include that
Two plane judge step: non-volatile to the Multi-plane structure comprising two plane of plane0 and plane1
Each selecting a block to carry out division operation in each plane of memorizer, result is it is possible that four kinds of situations simultaneously:
The first situation, plane0 wipes unsuccessfully plane1 and wipes successfully: at this moment need to repair this block of plane0,
After plane1 waits that plane0 finishes reparation, it is further continued for carrying out repair process below；
The second situation, plane0 wipes successfully plane1 and wipes unsuccessfully: at this moment need to repair this erroneous block of plane1
Multiple, after plane0 waits that plane1 finishes reparation, it is further continued for carrying out repair process below；
The third situation, plane0 wipes unsuccessfully plane1 and wipes unsuccessfully: at this moment need the mistake simultaneously to plane0 and plane1
Block reparation by mistake, repair process synchronizes to carry out, but it is different to repair the speed degree terminated, then first finish reparation
After needing to wait that another one plane also finishes reparation, it is further continued for carrying out process below；
4th kind of situation, plane0 wipes successfully plane1 and wipes successfully: at this moment need not repair plane0 and plane1
Multiple, directly carry out the inspection of the block of next address.
Method the most according to claim 1 and 2, it is characterised in that use same state machine simultaneously to realize Multi-
The block reparation of each plane of plane structure nonvolatile memory, described the need of repair judge step before, and also
Including:
Use same state machine control signals design procedure: each plane is designed with a control signal and decides whether
This plane is chosen to be made whether to need to repair to judge step, reparation step and traversal step.
Method the most according to claim 3, it is characterised in that use same state machine simultaneously to realize Multi-plane
The block reparation of each plane of structure nonvolatile memory, described the need of repair judge step before, also include:
Use same state machine control signals design procedure: each plane is designed with a control signal and decides whether
This plane is chosen to be made whether to need to repair to judge step, reparation step and traversal step.
6. the block repair apparatus of a Multi-plane structure nonvolatile memory, it is characterised in that including:
The need of repairing judge module, for each in each plane of Multi-plane structure nonvolatile memory
Carry out division operation, it is judged that the block wiped in each plane is the most successful, if there being erasing from selecting a block simultaneously
Unsuccessful piece, then need it is repaired；
Repair step: carry out repairing operation to each plane at unsuccessful piece of place of described erasing simultaneously, allow erasing block become
Other plane of merit waits, described reparation carries out follow-up step after having operated again；
Spider module: after described reparation step completes, travels through each block to each plane described, described in repetition is
No needs repairs the operation judging step, if there being unsuccessful piece of erasing all to repair by described reparation step, until complete
The traversal of in bulk.
Device the most according to claim 6, it is characterised in that described repair module can include replacing repair module: uses
Carry out repairing operation in each plane described simultaneously, be that the block using redundancy in each plane replaces described erasing not
Successfully block.
8. according to the device described in claim 6 or 7, it is characterised in that described the need of repair judge module may include that
Two plane judge modules, for non-easily to the Multi-plane structure comprising two plane of plane0 and plane1
Each selecting a block to carry out division operation in each plane of the property lost memorizer, result is it is possible that four kinds of feelings simultaneously
Condition:
The first situation, plane0 wipes unsuccessfully plane1 and wipes successfully: at this moment need to repair this block of plane0,
After plane1 waits that plane0 finishes reparation, it is further continued for carrying out repair process below；
The second situation, plane0 wipes successfully plane1 and wipes unsuccessfully: at this moment need to repair this erroneous block of plane1
Multiple, after plane0 waits that plane1 finishes reparation, it is further continued for carrying out repair process below；
The third situation, plane0 wipes unsuccessfully plane1 and wipes unsuccessfully: at this moment need the mistake simultaneously to plane0 and plane1
Block reparation by mistake, repair process synchronizes to carry out, but it is different to repair the speed degree terminated, then first finish reparation
After needing to wait that another one plane also finishes reparation, it is further continued for carrying out process below；
4th kind of situation, plane0 wipes successfully plane1 and wipes successfully: at this moment need not repair plane0 and plane1
Multiple, directly carry out the inspection of the block of next address.
9. according to the device described in claim 6 or 7, it is characterised in that can also include:
Use same state machine control signals to design module, be used for using same state machine to realize Multi-plane knot simultaneously
The block reparation of each plane of structure nonvolatile memory, described the need of repair judge step before, to each
Plane is designed with a control signal and decides whether to choose this plane to be made whether to need to repair to judge step, reparation step
And traversal step.
Device the most according to claim 8, it is characterised in that can also include:
Use same state machine control signals to design module, be used for using same state machine to realize Multi-plane knot simultaneously
The block reparation of each plane of structure nonvolatile memory, described the need of repair judge step before, to each
Plane is designed with a control signal and decides whether to choose this plane to be made whether to need to repair to judge step, reparation step
And traversal step.
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| CN110970083A (en) * | 2018-09-30 | 2020-04-07 | 长鑫存储技术有限公司 | Integrated circuit repairing method and device, storage medium and electronic equipment |
| CN112667168A (en) * | 2020-12-31 | 2021-04-16 | 联想(北京)有限公司 | Processing method and processing device |
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| US20130179728A1 (en) * | 2012-01-09 | 2013-07-11 | Mstar Semiconductor, Inc. | Repair method and device for abnormal-erase memory block of non-volatile flash memory |
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| CN106205733B (en) | 2019-09-06 |
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