CN106205492B - AMOLED driving circuit structure and preparation method thereof - Google Patents
AMOLED driving circuit structure and preparation method thereof Download PDFInfo
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- CN106205492B CN106205492B CN201610823018.0A CN201610823018A CN106205492B CN 106205492 B CN106205492 B CN 106205492B CN 201610823018 A CN201610823018 A CN 201610823018A CN 106205492 B CN106205492 B CN 106205492B
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- 229920001621 AMOLED Polymers 0.000 title claims abstract description 64
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 230000003071 parasitic effect Effects 0.000 claims abstract description 73
- 239000010410 layer Substances 0.000 claims description 165
- 229910052751 metal Inorganic materials 0.000 claims description 64
- 239000002184 metal Substances 0.000 claims description 64
- 239000000463 material Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 33
- 230000004888 barrier function Effects 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 239000011241 protective layer Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 3
- 238000004062 sedimentation Methods 0.000 claims description 3
- 230000008719 thickening Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 238000004070 electrodeposition Methods 0.000 claims 2
- 239000010409 thin film Substances 0.000 abstract description 9
- 239000003990 capacitor Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 206010001497 Agitation Diseases 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000024241 parasitism Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention provides a kind of AMOLED driving circuit structures and preparation method thereof; by increasing grid protection layer in the thickness in parasitic capacitance area; to reduce the parasitic capacitance in AMOLED driving circuit; parasitic capacitance and wiring parasitic capacitor including the thin film transistor (TFT) in AMOLED driving circuit; and then reduce influence of the parasitic capacitance to AMOLED driving circuit performance; especially to the influence of the compensation function of the AMOLED driving circuit with compensation function, the performance of displayer part is promoted.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of AMOLED driving circuit structure and preparation method thereof.
Background technique
Flat panel display device has many merits such as thin fuselage, power saving, radiationless, is widely used.It is existing
Flat panel display device mainly includes liquid crystal display device (Liquid Crystal Display, LCD) and Organic Light Emitting Diode
Display device (Organic Light Emitting Display, OLED).
Organic light emitting diodde desplay device due to being provided simultaneously with self-luminous, be not required to backlight, contrast are high, thickness is thin,
The excellent characteristics such as visual angle is wide, reaction speed is fast, it is wide to can be used for flexibility panel, use temperature range, construction and processing procedure are simpler,
It is considered as the emerging application technology of next-generation flat-panel screens.
OLED can be divided into passive OLED (PMOLED) and active OLED (AMOLED) according to driving type.AMOLED belongs to master
Dynamic display type, production has the dot structure being distributed in array on its display panel.OLED display generally includes: base
Plate, the anode on substrate, the organic luminous layer on anode, electron transfer layer on organic luminous layer and set
In the cathode on electron transfer layer.To organic luminous layer emit hole from anode when work and from the electronics of cathode, it will
The combination of these electrons and holes generates excitability electron-hole pair, and excitability electron-hole pair is converted to base from excited state
State, which is realized, to shine.
AMOLED is current driving apparatus, when there is electric current to flow through Organic Light Emitting Diode, organic light-emitting diode,
And light emission luminance is determined by the electric current for flowing through Organic Light Emitting Diode itself.Most of existing integrated circuit (Integrated
Circuit, IC) voltage signal is all only transmitted, therefore the driving circuit of AMOLED needs to complete that voltage signal is changed into electric current letter
Number task.In addition to this, AMOLED usually can also be designed to provide current flow uniformity using compensation circuit, internal at this time
Compensation circuit needs the threshold voltage of storage driving thin film transistor (TFT), and the size of parasitic capacitance will affect threshold voltage in circuit
Accuracy is compensated, this disadvantage can be in AMOLED using etching barrier (Etch Stop, ES) and back channel etch (Back
Channel Etch, BCE) structure thin film transistor (TFT) when be amplified, especially using the bigger ES structure of parasitic capacitance
When thin film transistor (TFT).
Summary of the invention
The purpose of the present invention is to provide a kind of AMOLED driving circuit structures, can reduce AMOLED internal compensation circuit
Parasitic capacitance and wiring capacitance, promoted displayer part performance.
The object of the invention is also to provide a kind of production methods of AMOLED driving circuit structure, can reduce AMOLED
The parasitic capacitance and wiring capacitance of internal compensation circuit promote the performance of displayer part.
To achieve the above object, the present invention provides a kind of AMOLED driving circuit structures, comprising: substrate, be set to it is described
Patterned the first metal layer, the covering the first metal layer on substrate and the grid protection layer on substrate are set to the grid
The etching barrier layer of active layer, the covering active layer and grid protection layer on the protective layer of pole is set to the etching barrier layer
On patterned second metal layer；
The region that the first metal layer and the second metal layer spatially overlap is parasitic capacitance area, the grid
Protective layer is greater than its thickness outside the parasitic capacitance area in the thickness in parasitic capacitance area.
The first metal layer includes grid and the grid line with grid electric connection；
The second metal layer includes source electrode, drain electrode and the data line being electrically connected with the source electrode；
The position of the active layer corresponds to the grid setting, the source electrode active layer corresponding with the position of drain electrode
Both ends setting, the source electrode is with drain electrode respectively by two through the via hole of the etching barrier layer and the both ends phase of the active layer
Contact；
The grid line is mutually perpendicular to interlock with data line；
Region, drain electrode and the grid that the parasitic capacitance area is located at the source electrode and grid spatially overlaps are spatially
Overlapping region and grid line and the overlapping region of data line spatially.
Grid protection layer in the parasitic capacitance area includes basic courses department and the thickened section in the basic courses department,
The basic courses department deposits simultaneously with the thickened section and is patterned by halftone mask together or gray-level mask.
Grid protection layer in the parasitic capacitance area includes basic courses department and the thickened section in the basic courses department,
The basic courses department first deposits, and deposits after the thickened section and individually carries out pattern to the thickened section by one of optical cover process
Change.
The material of the thickened section is photoresist or inorganic non-metallic material.
The present invention also provides a kind of production methods of AMOLED driving circuit structure, include the following steps:
Step 1 provides a substrate, forms patterned the first metal layer on the substrate；
Step 2 covers grid protection layer in the first metal layer and substrate, and the grid protection layer is in preset parasitism
The thickness of capacitive region is greater than its thickness outside the parasitic capacitance area；
Step 3 forms active layer in the grid protection layer；
Step 4 covers etching barrier layer on the active layer and grid protection layer；
Step 5 forms patterned second metal layer on the etching barrier layer, the first metal layer and described the
The region that two metal layers spatially overlap is corresponding with the position in the preset parasitic capacitance area.
The first metal layer includes grid and the grid line with grid electric connection；The second metal layer
Including source electrode, drain electrode and the data line being electrically connected with the source electrode；
The position of the active layer corresponds to the grid setting, the source electrode active layer corresponding with the position of drain electrode
Both ends setting, the source electrode is with drain electrode respectively by two through the via hole of the etching barrier layer and the both ends phase of the active layer
Contact；
The grid line is mutually perpendicular to interlock with data line；
The preset parasitic capacitance area respectively corresponds region, drain electrode and the grid that the source electrode and grid spatially overlap
The region and grid line and the overlapping region of data line spatially that pole spatially overlaps.
The step 2 specifically includes:
Gate protection layer material is deposited on the first metal layer and substrate, and passes through one of halftone mask or grayscale
Light shield removes the part of grid pole protective layer material outside the preset parasitic capacitance area, retains whole grids in parasitic capacitance area
Protective layer material, to form the basic courses department for covering the first metal layer and the grid protection layer on substrate and be located at institute
State the thickened section of the grid protection layer in the basic courses department in parasitic capacitance area.
The step 2 specifically includes:
Step 21, the deposition basic courses department material on the first metal layer and substrate form and cover first metal
The basic courses department of the grid protection layer of layer and substrate；
Step 22, the sedimentation thickening portion material in the basic courses department of the grid protection layer, and pass through one of optical cover process pair
The thickened section material is patterned, and the thickened section for the grid protection layer being located in preset parasitic capacitance area is formed.
The material of the thickened section is photoresist or inorganic non-metallic material.
Beneficial effects of the present invention: the present invention provides a kind of AMOLED driving circuit structure, by increasing grid protection layer
Thickness in parasitic capacitance area, to reduce the parasitic capacitance in AMOLED driving circuit, including thin in AMOLED driving circuit
The parasitic capacitance and wiring parasitic capacitor of film transistor, and then influence of the parasitic capacitance to AMOLED driving circuit performance is reduced,
Especially to the influence of the compensation function of the AMOLED driving circuit with compensation function, the performance of displayer part is promoted；
The present invention also provides a kind of production methods of AMOLED driving circuit structure, can reduce the parasitism electricity of AMOLED driving circuit
Hold, promotes the performance of displayer part.
Detailed description of the invention
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with of the invention detailed
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
In attached drawing,
Fig. 1 is the schematic diagram of the step 1 of the production method of AMOLED driving circuit structure of the invention；
Fig. 2 is the first embodiment of the step 2- step 3 of the production method of AMOLED driving circuit structure of the invention
Schematic diagram；
Fig. 3 is the first embodiment of the step 4- step 5 of the production method of AMOLED driving circuit structure of the invention
The schematic diagram of the first embodiment of schematic diagram and AMOLED driving circuit structure of the invention；
Fig. 4 is that the step 2- step 3 of the production method of AMOLED driving circuit structure of the invention second applies showing for example
It is intended to；
Fig. 5 is the second embodiment of the step 4- step 5 of the production method of AMOLED driving circuit structure of the invention
The schematic diagram of the second embodiment of schematic diagram and AMOLED driving circuit structure of the invention；
Fig. 6 is the flow chart of the production method of AMOLED driving circuit structure of the invention.
Specific embodiment
Further to illustrate technological means and its effect adopted by the present invention, below in conjunction with preferred implementation of the invention
Example and its attached drawing are described in detail.
Fig. 3 or Fig. 5 is please referred to, the present invention provides a kind of AMOLED driving circuit structure, comprising: substrate 1 is set to the base
Patterned the first metal layer 2 on plate 1, the covering the first metal layer 2 and grid protection layer 3 on substrate 1, be set to it is described
The etching barrier layer 5 of active layer 4, the covering active layer 4 and grid protection layer 3 in grid protection layer 3 is set to the etching
Patterned second metal layer 6 on barrier layer 5；
The first metal layer 2 is parasitic capacitance area, the grid with the region that the second metal layer 6 spatially overlaps
Pole protective layer 3 is greater than its thickness outside the parasitic capacitance area in the thickness in parasitic capacitance area.
Specifically, for using the thin film transistor (TFT) using ES structure as the control element of AMOLED driving circuit, at this point,
The first metal layer 2 includes grid 21 and the grid line 22 with the grid 21 electric connection；The second metal layer 6
Including source electrode 61, drain electrode 62 and the data line 63 being electrically connected with the source electrode 61；The position of the active layer 4 corresponds to institute
The setting of grid 21 is stated, the both ends of the source electrode 61 active layer 4 corresponding with the position of drain electrode 62 are arranged, the source electrode 61 and leakage
The via hole that the etching barrier layer 5 is run through by two respectively in pole 62 is in contact with the both ends of the active layer 4；The grid line 22
It is mutually perpendicular to interlock with data line 63.It is of course also possible to use the thin film transistor (TFT) of the other structures such as BCE as AMOLED's
The control element of driving circuit, this will not influence realization of the invention.
Wherein, the parasitic capacitance area be located at the region that the source electrode 61 spatially overlaps with grid 21, drain electrode 62 with
The region and grid line 22 and the overlapping region of data line 63 spatially that grid 21 spatially overlaps, that is to say, that ask
Refering to Fig. 3 or Fig. 5, spatially handed in the region that the source electrode 61 is spatially overlapped with grid 21, drain electrode 62 with grid 21
The thickness of folded region and grid line 22 grid protection layer 3 corresponding with the overlapping region of data line 63 spatially is greater than
The thickness of the grid protection layer 3 of rest part.
Specifically, Fig. 2 and Fig. 3 are please referred to, in the first embodiment of the present invention, the grid in the parasitic capacitance area is protected
Sheath 3 includes basic courses department 31 and the thickened section 32 in the basic courses department 31, and the basic courses department 31 first deposits, the increasing
It deposits behind thick portion 32 and the thickened section 32 is individually patterned by one of optical cover process, it is preferable that the basic courses department
31 material is one of silica and silicon nitride or a variety of combinations, and the material of the thickened section 32 is photoresist, into
And the patterning of thickened section 32 can be done directly by exposure and imaging processing procedure, certain thickened section 32 may be other
Inorganic non-metallic material forms the light shield system of the thickened section 32 herein and with no restrictions in the first embodiment of the present invention
Cheng Caiyong general common yellow light process in the prior art.
Specifically, Fig. 4 and Fig. 5 are please referred to, in the second embodiment of the present invention, the grid in the parasitic capacitance area is protected
Sheath 3 includes basic courses department 31 and the thickened section 32 in the basic courses department 31, the basic courses department 31 and the thickened section 32
Deposit simultaneously and by one of halftone mask (Half-Tone Mask, HTM) or gray-level mask (Gray-Tone Mask,
GTM it) is patterned, it is preferable that the material of the basic courses department 31 and thickened section 32 is one of silica and silicon nitride
Or a variety of combinations, it is patterned by the halftone mask or gray-level mask and specially removes the preset parasitic electricity
Hold the part of grid pole protective layer material outside area, retains whole gate protection layer materials in parasitic capacitance area, so that described
Grid protection layer 3 is greater than its thickness outside the parasitic capacitance area in the thickness in parasitic capacitance area.
It should be noted that the size of capacitor is proportional to the positive area of two electrode plate of capacitor and the ratio of spacing, thus
The parasitic capacitance size in the parasitic capacitance area in AMOLED driving circuit is proportional to the first metal layer 2 and second metal layer 6 in sky
Between upper overlapping area and spacing ratio, the present invention makes the by increasing thickness of the grid protection layer 3 in parasitic capacitance area
Spacing between one metal layer 2 and second metal layer 6 increases, and can be effectively reduced the parasitic capacitance in AMOLED driving circuit,
And then influence of the parasitic capacitance to AMOLED driving circuit performance is reduced, especially to the AMOLED driving circuit with compensation function
Compensation function influence, the performance of displayer part can be greatly promoted.
Referring to Fig. 6, including the following steps: the present invention also provides a kind of production method of AMOLED driving circuit structure
Step 1, referring to Fig. 1, provide a substrate 1, patterned the first metal layer 2 is formed on the substrate 1.
Specifically, the substrate 1 is transparent glass substrate or transparent plastic substrate, and the material of the first metal layer 2 is
One of metals such as aluminium, molybdenum and copper or a variety of combinations.
Step 2 please refers to Fig. 2 or Fig. 4, and grid protection layer 3, the grid are covered on the first metal layer 2 and substrate 1
Thickness of the pole protective layer 3 in preset parasitic capacitance area is greater than its thickness outside the parasitic capacitance area.
Specifically, referring to Fig. 2, in the first embodiment of the present invention, the step 2 includes:
Step 21 deposits basic courses department's material on the first metal layer 2 and substrate 1, is formed and covers first metal
The basic courses department 31 of the grid protection layer 3 of layer 2 and substrate 1；
Step 22, the sedimentation thickening portion material in the basic courses department 31 of the grid protection layer 3, and pass through one of optical cover process
The thickened section material is patterned, the thickened section 32 for the grid protection layer 3 being located in preset parasitic capacitance area is formed.
Preferably, in the first embodiment of the present invention, the material of the basic courses department 31 is one of silica and silicon nitride or more
The combination of kind, the material of the thickened section 32 are photoresist or inorganic non-metallic material.
Specifically, referring to Fig. 4, in the second embodiment of the present invention, the step 2 includes: in first metal
It deposits gate protection layer material on layer 2 and substrate 1, and described preset post is removed by one of halftone mask or gray-level mask
Part of grid pole protective layer material outside raw capacitive region, retains whole gate protection layer materials in parasitic capacitance area, to be formed
Cover the basic courses department 31 of the grid protection layer 3 of the first metal layer 2 and substrate 1 and in the parasitic capacitance area
The thickened section 32 of grid protection layer 3 in basic courses department 31；Preferably, in the second embodiment of the present invention, the basic courses department 31
Material with thickened section 32 is one of silica and silicon nitride or a variety of combinations.
Step 3 please refers to Fig. 2 or Fig. 4, and active layer 4 is formed in the grid protection layer 3.
Specifically, the material of the active layer 4 includes monocrystalline silicon, polysilicon or oxide semiconductor.
Step 4 please refers to Fig. 3 or Fig. 5, and etching barrier layer 5 is covered on the active layer 4 and grid protection layer 3.
Specifically, the material of the etching barrier layer 5 is one of silica and silicon nitride or a variety of combinations.
Step 5 please refers to Fig. 3 or Fig. 5, and patterned second metal layer 6 is formed on the etching barrier layer 5, described
The position phase in region and the preset parasitic capacitance area that the first metal layer 2 is spatially overlapped with the second metal layer 6
It is corresponding.
Specifically, by taking the control element using the thin film transistor (TFT) of ES structure effect AMOLED driving circuit as an example, at this point,
The first metal layer 2 includes grid 21 and the grid line 22 with the grid 21 electric connection；The second metal layer 6
Including source electrode 61, drain electrode 62 and the data line 63 being electrically connected with the source electrode 61；The position of the active layer 4 corresponds to institute
The setting of grid 21 is stated, the both ends of the source electrode 61 active layer 4 corresponding with the position of drain electrode 62 are arranged, the source electrode 61 and leakage
The via hole that the etching barrier layer 5 is run through by two respectively in pole 62 is in contact with the both ends of the active layer 4；The grid line 22
It is mutually perpendicular to interlock with data line 63.It is of course also possible to use the thin film transistor (TFT) of the other structures such as BCE as AMOLED's
The control element of driving circuit, this will not influence realization of the invention.
It should be noted that the size of capacitor is proportional to the positive area of two electrode plate of capacitor and the ratio of spacing, thus
The parasitic capacitance size in the parasitic capacitance area in AMOLED driving circuit is proportional to the first metal layer 2 and second metal layer 6 in sky
Between upper overlapping area and spacing ratio, the present invention makes the by increasing thickness of the grid protection layer 3 in parasitic capacitance area
Spacing between one metal layer 2 and second metal layer 6 increases, and can be effectively reduced the parasitic capacitance in AMOLED driving circuit,
And then influence of the parasitic capacitance to AMOLED driving circuit performance is reduced, especially to the AMOLED driving circuit with compensation function
Compensation function influence, the performance of displayer part can be greatly promoted.
In conclusion the present invention provides a kind of AMOLED driving circuit structure, by increasing grid protection layer in parasitic electricity
The thickness for holding area, to reduce the parasitic capacitance in AMOLED driving circuit, including the thin film transistor (TFT) in AMOLED driving circuit
Parasitic capacitance and wiring parasitic capacitor, and then reduce influence of the parasitic capacitance to AMOLED driving circuit performance, it is especially right
The influence of the compensation function of AMOLED driving circuit with compensation function promotes the performance of displayer part；The present invention is also
A kind of production method of AMOLED driving circuit structure is provided, the parasitic capacitance of AMOLED driving circuit can be reduced, is promoted
The performance of displayer part.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding changes and modifications are made in design, and all these change and modification all should belong to the claims in the present invention
Protection scope.
Claims (8)
1. a kind of AMOLED driving circuit structure characterized by comprising substrate (1), the pattern being set on the substrate (1)
The first metal layer (2) of change, the covering the first metal layer (2) and grid protection layer (3) on substrate (1), set on the grid
The etching barrier layer (5) of active layer (4), the covering active layer (4) and grid protection layer (3) on pole protective layer (3) is set to
Patterned second metal layer (6) on the etching barrier layer (5)；
The region that the first metal layer (2) and the second metal layer (6) spatially overlap is parasitic capacitance area, the grid
Pole protective layer (3) is greater than its thickness outside the parasitic capacitance area in the thickness in parasitic capacitance area；
The first metal layer (2) includes grid (21) and the grid line (22) with the grid (21) electric connection；
The second metal layer (6) includes source electrode (61), drain electrode (62) and the data line being electrically connected with the source electrode (61)
(63)；
The position of the active layer (4) corresponds to the grid (21) setting, and the source electrode (61) is corresponding with the drain electrode position of (62)
The both ends of the active layer (4) are arranged, and the source electrode (61) and drain electrode (62) run through the etching barrier layer (5) by two respectively
Via hole be in contact with the both ends of the active layer (4)；
The grid line (22) is mutually perpendicular to interlock with data line (63)；
The parasitic capacitance area is located at the spatially overlapping region in the source electrode (61) and grid (21), drain electrode (62) and grid
(21) spatially overlapping region and grid line (22) and the overlapping region of data line (63) spatially.
2. AMOLED driving circuit structure as described in claim 1, which is characterized in that the grid in the parasitic capacitance area is protected
Sheath (3) includes basic courses department (31) and the thickened section (32) on the basic courses department (31), the basic courses department (31) and institute
It states thickened section (32) while depositing and passing through one of halftone mask or gray-level mask is patterned.
3. AMOLED driving circuit structure as described in claim 1, which is characterized in that the grid in the parasitic capacitance area is protected
Sheath (3) includes that basic courses department (31) and the thickened section (32) on the basic courses department (31), the basic courses department (31) are first sunk
Product, the thickened section (32) deposit afterwards and are individually patterned by one of optical cover process to the thickened section (32).
4. AMOLED driving circuit structure as claimed in claim 3, which is characterized in that the material of the thickened section (32) is light
Hinder material or inorganic non-metallic material.
5. a kind of production method of AMOLED driving circuit structure, which comprises the steps of:
Step 1 provides a substrate (1), and patterned the first metal layer (2) are formed on the substrate (1)；
Step 2 covers grid protection layer (3) in the first metal layer (2) and substrate (1), and the grid protection layer (3) is pre-
If parasitic capacitance area thickness be greater than its thickness outside the parasitic capacitance area；
Step 3 forms active layer (4) on the grid protection layer (3)；
Step 4 covers etching barrier layer (5) on the active layer (4) and grid protection layer (3)；
Step 5 forms patterned second metal layer (6) on the etching barrier layer (5), the first metal layer (2) with
The spatially overlapping region of the second metal layer (6) is corresponding with the position in the preset parasitic capacitance area；
The first metal layer (2) includes grid (21) and the grid line (22) with the grid (21) electric connection；It is described
Second metal layer (6) includes source electrode (61), drain electrode (62) and the data line (63) being electrically connected with the source electrode (61)；
The position of the active layer (4) corresponds to the grid (21) setting, and the source electrode (61) is corresponding with the drain electrode position of (62)
The both ends of the active layer (4) are arranged, and the source electrode (61) and drain electrode (62) run through the etching barrier layer (5) by two respectively
Via hole be in contact with the both ends of the active layer (4)；
The grid line (22) is mutually perpendicular to interlock with data line (63)；
The preset parasitic capacitance area respectively corresponds the source electrode (61) and grid (21) spatially overlapping region, drain electrode
(62) region and grid line (22) and data line (63) overlapping area spatially spatially overlapping with grid (21)
Domain.
6. the production method of AMOLED driving circuit structure as claimed in claim 5, which is characterized in that the step 2 is specific
Include:
Gate protection layer material is deposited on the first metal layer (2) and substrate (1), and passes through one of halftone mask or ash
Rank light shield removes the part of grid pole protective layer material outside the preset parasitic capacitance area, retains whole grid in parasitic capacitance area
Pole protective layer material, to form the basic courses department for covering the grid protection layer (3) of the first metal layer (2) and substrate (1)
(31) thickened section (32) of the grid protection layer (3) and in the basic courses department (31) in the parasitic capacitance area.
7. the production method of AMOLED driving circuit structure as claimed in claim 5, which is characterized in that the step 2 is specific
Include:
Step 21 deposits basic courses department's material on the first metal layer (2) and substrate (1), is formed and covers first metal
The basic courses department (31) of the grid protection layer (3) of layer (2) and substrate (1)；
Step 22, the sedimentation thickening portion material in the basic courses department (31) of the grid protection layer (3), and pass through one of optical cover process
The thickened section material is patterned, the thickened section for the grid protection layer (3) being located in preset parasitic capacitance area is formed
(32)。
8. the production method of AMOLED driving circuit structure as claimed in claim 7, which is characterized in that the thickened section (32)
Material be photoresist or inorganic non-metallic material.
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| CN101425542A (en) * | 2007-11-02 | 2009-05-06 | 上海广电Nec液晶显示器有限公司 | Thin-film transistor and LCD device |
| CN104347677A (en) * | 2013-07-30 | 2015-02-11 | 乐金显示有限公司 | Organic light emitting diode display and method for manufacturing the same |
| CN105489615A (en) * | 2016-01-13 | 2016-04-13 | 深圳市华星光电技术有限公司 | Thin-film transistor array substrate for AMOLED and manufacture method thereof |
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| CN101425542A (en) * | 2007-11-02 | 2009-05-06 | 上海广电Nec液晶显示器有限公司 | Thin-film transistor and LCD device |
| CN104347677A (en) * | 2013-07-30 | 2015-02-11 | 乐金显示有限公司 | Organic light emitting diode display and method for manufacturing the same |
| CN105489615A (en) * | 2016-01-13 | 2016-04-13 | 深圳市华星光电技术有限公司 | Thin-film transistor array substrate for AMOLED and manufacture method thereof |
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