CN106185874A - CNT continuous preparation device - Google Patents
CNT continuous preparation device Download PDFInfo
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- CN106185874A CN106185874A CN201610774707.7A CN201610774707A CN106185874A CN 106185874 A CN106185874 A CN 106185874A CN 201610774707 A CN201610774707 A CN 201610774707A CN 106185874 A CN106185874 A CN 106185874A
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Abstract
nullThe present invention relates to a kind of CNT continuous preparation device，Including reaction chamber，Reaction chamber upper end is provided with feed pipe，Reaction chamber lower end connects discharge nozzle，Reaction lumenal levels is provided with substrate，Base lower surface is provided with catalyst film，Substrate is provided with several the first holes，Catalyst film is provided with several the second holes，First hole and the second hole are through，Plasma emitter it is provided with in reaction chamber，Connect first outside reaction chamber and add air cavity，Connect second outside discharge nozzle and add air cavity，Second adds air cavity and first adds the through connection of air cavity，Reaction chamber and discharge nozzle inwall are equipped with several air nozzles，The air intake of the air nozzle on reaction chamber inwall and first adds air cavity and connects，The air intake of the air nozzle on discharge nozzle inwall and second adds air cavity and connects，The present invention solve carbon nano tube growth efficiency low and when preparing CNT and discharging CNT can be attached to reaction chamber and the problem of discharge nozzle inwall.
Description
Technical field
The present invention relates to a kind of CNT continuous preparation device, belong to carbon nanotube technology field.
Background technology
Nanotube is thinner than the hairline of people 10,000 times, and its hardness than steel hard 100 times.It can tolerate
The high temperature of 6500 °F (3593 DEG C), and there is the heat conductivility of brilliance.Nanotube both can serve as metallic conductor, than gold
Electric conductivity is much higher, it is also possible to be used as to manufacture quasiconductor necessary to computer chip.Nanotube the most also has
Superconductivity.
The classification of nanotube has: nano-tube, SWCN, double-walled carbon nano-tube, multi-walled carbon nano-tubes, functionalization
Multi-walled carbon nano-tubes, short MWCNTs, industrialization multi-walled carbon nano-tubes, graphitization multi-walled carbon nano-tubes, large diameter thin-walled
CNT, nickel-plating carbon nanotube.Aerolite carbonaceous crystalline nanometric pipe.
In nanotube is applied to the development process of computer computing, an important milestone is manufactured into nanotube exactly
Switch used in computer or transistor.1998, a research group in gloomy research center, Witter belonging to IBM Corporation was i.e. with this
Studied for target.Research worker proves that single nanotube can have the effect of transistor, and it is brilliant to improve it
The electric conductivity of body.
But, it is applied to the aspect that computer computing is also nanotube and demonstrates its superiority.People can be these
Miniature tube is bonded together, and makes fiber or rope, as superconducting cable, or plastics and the superpower reinforcing of other advanced materials
Agent.If nanotube possesses extremely strong flexibility, intensity and restoring force, they are by can the physical culture of synthesized high-performance and aeronautical material.
Due to the tension force that it is powerful, they have curved and do not roll over and can recover the property of original form.
Additionally, nanotube applies also for needing most the place of heat conductivility.Such as, if motor uses nanotube to do
Fin, plastic components therein would not be melted by high temperature.This Minisize materials also can be inserted to be needed to tolerate extreme high heat
Material among, the panel etc. as outside aircraft and rocket.Nanotube is inserted from anti-by American National space flight and NASA's expectation
Thermosphere is among the various facilities such as spacesuit.
Nanotube is also regarded with special esteem by energy company.Nanotube can be used to manufacture less, lighter, the higher fuel of usefulness
Battery, it can also be used to storage and is used as the hydrogen of the energy.Research worker is received numerous on flat sheet glass or other materials
Mitron is lined up, and allows them look like the neat wheatland of a piece of harvesting.The NEC of Japan and the Samsung of Korea S prepare will
The display screen of television set is made in this " field " being made up of nanotube, to replace the old-fashioned cathode ray that television set is used
Pipe.
At present, CNT preparation technology mainly has arc discharge method, radium-shine ablation and chemical vapour deposition technique.Its
In, chemical vapour deposition technique with its simple process, low cost, nanotube is controlled, length is big, collection rate high obtains extensively
Research and application.Chemical vapour deposition technique mainly use the transition metal of nanoscale or its oxide as catalyst,
The source of the gas of carbon containing it is pyrolyzed to prepare CNT at a temperature of relatively low.
In traditional carbon nanotube preparing apparatus, substrate is air-locked, when reacting gas is passed through, with catalyst film
Contact, can be at its superficial growth CNT, and along with CNT progressive additive, catalyst film is gradually flooded completely,
The catalyst film being submerged can not contact with reacting gas again, does not has the effect of catalyst, causes CNT to continue
Continuous growth.General when stopping growing, in this case after carbon nano tube growth to about 1-2mm so that CNT can not
Growing continuously and grow vertically downward, growth efficiency is relatively low, and general preparation facilities is when preparing CNT and discharging,
CNT can be attached to reaction chamber and discharge nozzle inwall.
The open such a carbon nanotube preparing apparatus of Chinese invention patent description CN 103569998 A, including: one
Reaction chamber, is provided with at least one air inlet pipe in described reaction chamber, each air inlet pipe is provided with multiple air inlet；Substrate bearing
Dish；At least one escape pipe, each escape pipe is provided with multiple venthole；Wherein, described substrate bearing dish is positioned at described air inlet
Between pipe and described escape pipe, each air inlet pipe and each escape pipe are detachably arranged in described reaction chamber.But it is this
Preparation facilities is when preparing CNT and discharging, and CNT can be attached to reaction chamber and discharge nozzle inwall.
The process units of the open such a CNT of Chinese utility model patent description CN 205045828 U, bag
Including horizontal reacting chamber, crystal reaction tube, quartz boat, heater, temperature-controlling cabinet, described crystal reaction tube is positioned at described horizontal reacting
Intracavity, described heater is positioned at the top in described horizontal reacting chamber, and described temperature-controlling cabinet is positioned at the lower section in described horizontal reacting chamber,
This process units also includes ultrasonator, microfilter, Fluohydric acid. wash pool, potassium permanganate reactor, described sonic oscillation
Device is connected with described horizontal reacting chamber, and described ultrasonator is connected with described microfilter, described microfilter and institute
State Fluohydric acid. wash pool be connected, described Fluohydric acid. wash pool is connected with described potassium permanganate reactor, described potassium permanganate reactor and
Described exsiccator is connected.But this preparation facilities production efficiency is low, when preparing CNT and discharging, CNT can be attached
At reaction chamber and discharge nozzle inwall.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of CNT continuous preparation device, and this CNT is made continuously
Standby device solve carbon nano tube growth efficiency low, can not vertical continuous growth and when preparing CNT and discharging carbon receive
Mitron can be attached to reaction chamber and the problem of discharge nozzle inwall.
In order to solve above-mentioned technical problem, the CNT continuous preparation device of the present invention includes reaction chamber, on reaction chamber
End is provided with feed pipe, and reaction chamber lower end connects discharge nozzle, and reaction lumenal levels is provided with substrate, and it is thin that base lower surface is provided with catalyst
Film, substrate is provided with several the first holes, and catalyst film is provided with several the second holes, the first hole and the second hole
Through, it is provided with plasma emitter in reaction chamber, connects first outside reaction chamber and add air cavity, first adds air cavity upper end is provided with aerating
Mouthful, first adds air cavity periphery is provided with heater, connects second and add air cavity outside discharge nozzle, and second adds air cavity and first adds air cavity
Through connection, described reaction chamber and discharge nozzle inwall be equipped with several air nozzles, the air nozzle on reaction chamber inwall enter gas
Mouth adds air cavity with first and is connected, and the air intake of the air nozzle on discharge nozzle inwall and second adds air cavity and connects.
A diameter of 30 ~ 120nm of described first through hole；A diameter of 10 ~ 50nm of described second through hole.
Described substrate material is pottery.
Bottom described reaction chamber concave.
The gas outlet of described air nozzle is diagonally downward.
Use this CNT continuous preparation device, have the advantage that
1, being provided with catalyst film due to base lower surface, substrate is provided with several the first holes, and catalyst film is provided with
Several second holes, the first hole and the second hole are through, and such carbon-source gas can pass through the first hole inflow catalyst
In thin film the second through hole, it is ensured that CNT can grow the most continuously, the direction of growth of CNT becomes vertically downward
Growth, under gravity, CNT can come off after adding up from catalyst film, thus serves continuous fast-growth
Effect, improve the growth efficiency of CNT；
2, owing to being provided with plasma emitter in reaction chamber, so can the decomposition of carbon-source gas further, make reaction more fill
Point, further increase the growth efficiency of CNT；
3, be equipped with several air nozzles due to reaction chamber and discharge nozzle inwall, the air intake of the air nozzle on reaction chamber inwall with
First adds air cavity connects, and the air intake of the air nozzle on discharge nozzle inwall and second adds air cavity and connects, so can the chamber of aerating in the past
Add noble gas, then spray from air nozzle, it is to avoid CNT is attached on reaction chamber and discharge nozzle inwall and blocks
Discharge nozzle.
Accompanying drawing explanation
The present invention is further detailed explanation with detailed description of the invention below in conjunction with the accompanying drawings.
Fig. 1 is the structural representation of the present invention.
Wherein have: 1. reaction chamber；2. feed pipe；3. plasma emitter；4. substrate；4.1. the first hole；5.
Catalyst film；5.1. the second hole；6. CNT；7. air nozzle；8. first adds air cavity；9. add QI KOU；10. go out
Material pipe；11. second add air cavity；12. heaters.
Detailed description of the invention
CNT continuous preparation device shown in Fig. 1, including reaction chamber, reaction chamber upper end is provided with feed pipe, under reaction chamber
End connects discharge nozzle, and reaction lumenal levels is provided with substrate, and base lower surface is provided with catalyst film, substrate be provided with several the
One hole, it is through that catalyst film is provided with several the second holes, the first hole and the second hole, be provided with in reaction chamber etc. from
Sub-emitter, connects outside reaction chamber and first adds air cavity, and first adds air cavity upper end is provided with and adds QI KOU, and first adds air cavity periphery is provided with
Heater, connects outside discharge nozzle and second adds air cavity, and second adds air cavity and first adds the through connection of air cavity, described reaction chamber and
Discharge nozzle inwall is equipped with several air nozzles, and the air intake of the air nozzle on reaction chamber inwall and first adds air cavity and connects, and goes out
The air intake and second of the air nozzle on material inside pipe wall adds air cavity and connects.
A diameter of 30 ~ 120nm of described first through hole；A diameter of 10 ~ 50nm of described second through hole.
The material of described substrate is pottery.
Bottom described reaction chamber concave.
The gas outlet of described air nozzle is diagonally downward.
During reaction, being passed through carbon-source gas by feed pipe, carbon-source gas can pass through the first hole inflow catalyst thin film
In second through hole, then flow to catalyst film lower surface, owing to the lower surface exposure of catalyst film can be with carbon-source gas
Contact so that the direction of growth of CNT is along catalyst lower surface direction, and under gravity, improves CNT
Growth efficiency.And Automatic-falling under gravity.Owing to being provided with plasma emitter in reaction chamber, so can be further
The decomposition of carbon-source gas, makes reaction more abundant, further increases the growth efficiency of CNT.Due to reaction chamber and discharging
Inside pipe wall is equipped with several air nozzles, and the air intake of the air nozzle on reaction chamber inwall and first adds air cavity and connects, discharge nozzle
The air intake of the air nozzle on inwall and second adds air cavity and connects, and so can add noble gas, then from spray in the chamber of aerating in the past
Valve sprays, it is to avoid CNT is attached on reaction chamber and discharge nozzle inwall and blocks discharge nozzle.Described noble gas can
Think nitrogen.
Not having the technical characteristic described in detail in the application is prior art.Above-described embodiment only illustrative the application
Principle and effect, not for limit the application.Any person skilled in the art all can be in the essence without prejudice to the application
God and under the scope of, above-described embodiment is modified or changes.Therefore, art has usually intellectual do not taking off
All equivalences completed under spirit disclosed herein with technological thought are modified or change, must be by the right of the application
Require to be contained.
Claims (5)
1. a CNT continuous preparation device, it is characterised in that: include that reaction chamber, reaction chamber upper end are provided with feed pipe, instead
Answering lower end, chamber to connect discharge nozzle, reaction lumenal levels is provided with substrate, and base lower surface is provided with catalyst film, if substrate is provided with
Dry the first hole, it is through that catalyst film is provided with several the second holes, the first hole and the second hole, sets in reaction chamber
Having plasma emitter, connect and first add air cavity outside reaction chamber, first adds air cavity upper end is provided with and adds QI KOU, and first adds outside air cavity
Enclosing and be provided with heater, connect and second add air cavity outside discharge nozzle, second adds air cavity and first adds the through connection of air cavity, described instead
Answering chamber and discharge nozzle inwall to be equipped with several air nozzles, the air intake of the air nozzle on reaction chamber inwall and first adds air cavity even
Connecing, the air intake of the air nozzle on discharge nozzle inwall and second adds air cavity and connects.
2. according to the CNT continuous preparation device described in claim 1, it is characterised in that: the diameter of described first through hole
It is 30 ~ 120nm；A diameter of 10 ~ 50nm of described second through hole.
3. according to the CNT continuous preparation device described in claim 1, it is characterised in that: the material of described substrate is pottery
Porcelain.
4. according to the CNT continuous preparation device described in claim 1, it is characterised in that: in recessed bottom described reaction chamber
Shape.
5. according to the CNT continuous preparation device described in claim 1, it is characterised in that: incline in the gas outlet of described air nozzle
Obliquely.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610774707.7A CN106185874A (en) | 2016-08-31 | 2016-08-31 | CNT continuous preparation device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610774707.7A CN106185874A (en) | 2016-08-31 | 2016-08-31 | CNT continuous preparation device |
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| CN106185874A true CN106185874A (en) | 2016-12-07 |
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| CN201610774707.7A Pending CN106185874A (en) | 2016-08-31 | 2016-08-31 | CNT continuous preparation device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108996489A (en) * | 2017-06-07 | 2018-12-14 | 清华大学 | A kind of preparation facilities of carbon nano pipe array |
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| JP2001173231A (en) * | 1999-12-17 | 2001-06-26 | Sumitomo Constr Co Ltd | Form fixing tool |
| CN101121511A (en) * | 2006-08-10 | 2008-02-13 | 细美事有限公司 | Apparatus for collecting carbon nanotube and system and method for preparing carbon nano tube |
| CN101910061A (en) * | 2008-01-21 | 2010-12-08 | 日机装株式会社 | Apparatus for producing carbon nanotube |
| CN102119120A (en) * | 2008-08-08 | 2011-07-06 | 株式会社东芝 | Nanocarbon generation device |
| CN104418318A (en) * | 2013-09-05 | 2015-03-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Continuous growth device for carbon nano-tube |
| CN104418317A (en) * | 2013-09-05 | 2015-03-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Continuous growth device for carbon nano-tube |
| CN205204828U (en) * | 2015-12-08 | 2016-05-04 | 赵屹坤 | Carbon nanotube generates device |
| CN206033233U (en) * | 2016-08-31 | 2017-03-22 | 无锡东恒新能源科技有限公司 | A preparation ware for batch production carbon nanotube |
-
2016
- 2016-08-31 CN CN201610774707.7A patent/CN106185874A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001173231A (en) * | 1999-12-17 | 2001-06-26 | Sumitomo Constr Co Ltd | Form fixing tool |
| CN101121511A (en) * | 2006-08-10 | 2008-02-13 | 细美事有限公司 | Apparatus for collecting carbon nanotube and system and method for preparing carbon nano tube |
| CN101910061A (en) * | 2008-01-21 | 2010-12-08 | 日机装株式会社 | Apparatus for producing carbon nanotube |
| CN102119120A (en) * | 2008-08-08 | 2011-07-06 | 株式会社东芝 | Nanocarbon generation device |
| CN104418318A (en) * | 2013-09-05 | 2015-03-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Continuous growth device for carbon nano-tube |
| CN104418317A (en) * | 2013-09-05 | 2015-03-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Continuous growth device for carbon nano-tube |
| CN205204828U (en) * | 2015-12-08 | 2016-05-04 | 赵屹坤 | Carbon nanotube generates device |
| CN206033233U (en) * | 2016-08-31 | 2017-03-22 | 无锡东恒新能源科技有限公司 | A preparation ware for batch production carbon nanotube |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108996489A (en) * | 2017-06-07 | 2018-12-14 | 清华大学 | A kind of preparation facilities of carbon nano pipe array |
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