CN106159429A - A kind of unipolarity micro-strip oscillator - Google Patents
A kind of unipolarity micro-strip oscillator Download PDFInfo
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- CN106159429A CN106159429A CN201510130612.7A CN201510130612A CN106159429A CN 106159429 A CN106159429 A CN 106159429A CN 201510130612 A CN201510130612 A CN 201510130612A CN 106159429 A CN106159429 A CN 106159429A
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Abstract
The present invention relates to the communications field, be specifically related to a kind of unipolarity micro-strip oscillator；Include main PCB plate by setting, described main PCB plate is symmetrically arranged with two micro-strip radiation areas；Described each micro-strip radiation area includes in micro-strip arc limit under arc limit and micro-strip, and in described micro-strip, under arc limit and micro-strip, arc limit Guan Bi forms a region closed；The microstrip element of multiple 1/2nd independent wavelength it is provided with in described each micro-strip radiation area；Between the alleviating distention in middle-JIAO of described each microstrip element two ends narrow in dumbbell shaped；It all shows excellent communication electric parameter performance in 800MHz to 950MHz frequency range, and concrete, before and after the minimum frequency of single radiating element, ratio is all higher than 31dB, and at 950MHz, before and after the minimum frequency of single radiating element, ratio is 36dB；And low frequency dot gains is all higher than 9.35dBi, in frequency band, average gain is more than 9.8dBi.
Description
Technical field
The present invention relates to the communications field, be specifically related to a kind of unipolarity micro-strip oscillator.
Background technology
At present, micro-single antenna becomes in communication, especially the main flow of miniature antenna.Antenna is
A kind of high frequency electric is changed into radio wave transmission to space, while can be wireless with collection space
Electric wave also produces the device of high frequency electric.Antenna can regard the tuning electricity being made up of electric capacity and inductance as
Road；This tuning circuit is at some Frequency point, and its capacitive and perception will be cancelled out each other, and circuit shows
Going out purely resistive, this phenomenon is referred to as resonance, and working frequency points corresponding to resonance phenomena is resonance
Frequency point, is in the energy of antenna resonant frequency point, and its radiation characteristic is the strongest；And will have humorous
The antenna structure of characteristic of shaking is referred to as antenna oscillator, and the antenna structure directly encouraged by high frequency electric
Referred to as active dipole, otherwise referred to as parasitic element；In existing oscillator, including physics oscillator and
Micro-strip oscillator, according to actually used when needing antenna is designed, so that antenna
Resonant frequency point meet set requirement, need the input impedance of antenna is adjusted, pass through
Oscillator after adjustment and common oscillator still can not meet the requirement of current communication standard, at present
Communication standard is more and more higher, and the requirement to micro-strip oscillator is more and more higher, the increasing of current oscillator
Benefit, directivity, front and back ratio are required to obtain breakthrough, it is most important that meet the premise of miniaturization
Under realize above-mentioned breakthrough.
Summary of the invention
It is an object of the invention to overcome disadvantages described above, it is provided that a kind of high-gain,
Good directionality and the unipolarity micro-strip oscillator of miniaturization can be realized.
For achieving the above object, the concrete scheme of the present invention is as follows: a kind of unipolarity micro-strip oscillator,
Include main PCB plate, described main PCB plate is symmetrically arranged with two micro-strip radiation areas；Described
Each micro-strip radiation area includes in micro-strip arc limit under arc limit and micro-strip, arc limit in described micro-strip
A region closed is formed with arc limit Guan Bi under micro-strip；It is provided with in described each micro-strip radiation area
The microstrip element of multiple 1/2nd independent wavelength；Between the alleviating distention in middle-JIAO of described each microstrip element two ends
Narrow in dumbbell shaped；The plurality of 1/2nd independent wave microstrip unit be divided into one first micro-
Tape cell, two the second microstrip elements, two the 3rd microstrip elements, two the 4th microstrip elements
And the 5th microstrip element；
Described first microstrip element is provided close to the side on arc limit under micro-strip, and the 5th microstrip element sets
In the side on arc limit in micro-strip, said two the second microstrip element is respectively arranged on the first micro-strip
The both sides of the top of unit and in the same horizontal line, said two the 3rd microstrip element sets respectively
In the both sides and in the same horizontal line of the top of two the second microstrip elements, said two the 4th
Microstrip element is respectively arranged on the top and in the same horizontal line of the 3rd microstrip element；
One end of described first microstrip element electrically connects with one end of second microstrip element, institute
One end of the other end and another the second microstrip element of stating the first microstrip element electrically connects, described
One end electrical connection of the other end of one the second microstrip element and the 3rd microstrip element, described
The other end of another the second microstrip element electrically connects with one end of another the 3rd microstrip element,
The other end of one the 3rd microstrip element and one end of the 4th microstrip element connect, institute
One end of the other end and another the 4th microstrip element of stating another the 3rd microstrip element is connected,
The other end of one the 4th microstrip element and the other end of another the 4th microstrip element divide
Do not electrically connect with the two ends of the 5th microstrip element；
Also include two microstrip-fed lines；One end of described microstrip-fed line and corresponding micro-strip spoke
Penetrating the first microstrip element electrical connection in district, the via that the other end is corresponding with on main PCB plate is electrically connected
Connect；
Described microstrip-fed line includes the N shape isolation part of a N font and isolates from N shape
The connecting portion that portion extends one end；The other end of described N shape isolation part electrically connects with via；Institute
State at the arch of two N shape isolation parts the most outside；
The edge of described main PCB plate is provided with a circle micro-strip isolation loop wire.
Preferably, it is additionally provided with one between described 3rd microstrip element and the 4th microstrip element T-shaped
Micro-strip T-shaped isolation part.
Preferably, in described micro-strip, the radian α 1 on arc limit is 90 °-120 °.
Preferably, the centre of described each microstrip element is provided with a two is for rectangle in the middle of arc
Through hole.
Preferably, it is filled with silicon dioxide quasiconductor in described through hole.
Preferably, the both sides up and down of described main PCB plate are provided with jagged micro-strip isolation tooth trace.
Preferably, the upper and lower of the micro-strip radiation area of described main PCB is equipped with two sections same
On one horizontal line micro-strip isolation straight line, the close two ends of described two sections of micro-strip straight lines be provided with every
From microstrip capacitor.
Preferably, the edge indentation of the mid portion of described microstrip element.
The invention have the benefit that and include main PCB plate, described main PCB plate by setting
On be symmetrically arranged with two micro-strip radiation areas；Described each micro-strip radiation area includes arc in micro-strip
Arc limit under limit and micro-strip, in described micro-strip, under arc limit and micro-strip, arc limit Guan Bi forms a closing
Region；The micro-strip of multiple 1/2nd independent wavelength it is provided with in described each micro-strip radiation area
Unit；Between the alleviating distention in middle-JIAO of described each microstrip element two ends narrow in dumbbell shaped；The plurality of independent two
/ mono-wave microstrip unit be divided into first microstrip element, two the second microstrip elements, two
Individual 3rd microstrip element, two the 4th microstrip elements and the 5th microstrip element；Its
800MHz to 950MHz frequency range all shows excellent communication electric parameter performance, concrete,
Before and after the minimum frequency of single radiating element, ratio is all higher than 31dB, at 950MHz, and single radiation list
Before and after the minimum frequency of unit, ratio is 36dB；And low frequency dot gains is all higher than 9.35dBi, in frequency band
Average gain is more than 9.8dBi.
Accompanying drawing explanation
Fig. 1 is the top view of the present invention；
Fig. 2 is the top view of the present invention；
Fig. 3 is the top view of microstrip element；
Fig. 4 is the front view of microstrip element；
Fig. 5 be when frequency is 800MHZ before and after the experimental data figure of ratio；
Fig. 6 be when frequency is 890MHZ before and after the experimental data figure of ratio；
Fig. 7 be when frequency is 920MHZ before and after the experimental data figure of ratio；
Fig. 8 be when frequency is 950MHZ before and after the experimental data figure of ratio；
Fig. 9 is the directional diagram representing gain when frequency is 800MHZ；
Figure 10 is the directional diagram representing gain when frequency is 890MHZ；
Figure 11 is the directional diagram representing gain when frequency is 950MHZ；
Description of reference numerals in Fig. 1 to Figure 11:
1-main PCB plate；11-micro-strip isolation loop wire；12-micro-strip isolation tooth trace；13-micro-strip every
From straight line；
2-micro-strip radiation area；Arc limit in 21-micro-strip；Arc limit under 22-micro-strip；
31-via；32-N shape isolation part；33-connecting portion；
41-the first microstrip element；42-the second microstrip element；43-the 3rd microstrip element；44-
4th microstrip element；45-the 5th microstrip element；
5-micro-strip T-shaped isolation part；
6-through hole.
Detailed description of the invention
The present invention is further detailed explanation with specific embodiment below in conjunction with the accompanying drawings, not
It is that the practical range of the present invention is confined to this.
As shown in Figure 1 to 11, a kind of unipolarity micro-strip oscillator described in the present embodiment, bag
Include main PCB plate 1, described main PCB plate 1 has been symmetrically arranged with two micro-strip radiation areas 2；
Described each micro-strip radiation area 2 includes in micro-strip arc limit 22 under arc limit 21 and micro-strip, institute
State in micro-strip arc limit 22 Guan Bi under arc limit 21 and micro-strip and form a region closed；Described often
The microstrip element of multiple 1/2nd independent wavelength it is provided with in individual micro-strip radiation area 2；Described often
Between the alleviating distention in middle-JIAO of individual microstrip element two ends narrow in dumbbell shaped；The plurality of 1/2nd independent wavelength are micro-
Tape cell is divided into 41, two the second microstrip elements of first microstrip element 42, two the 3rd
43, two the 4th microstrip elements 44 of microstrip element and the 5th microstrip element 45；
Described first microstrip element 41 is provided close to the side on arc limit 22 under micro-strip, the 5th micro-strip
Unit 45 is provided close to the side on arc limit 21 in micro-strip, said two the second microstrip element 42
It is respectively arranged on the both sides and in the same horizontal line of the top of the first microstrip element 41, described two
Individual 3rd microstrip element 43 be respectively arranged on the top of two the second microstrip elements 42 both sides and
On same level line, said two the 4th microstrip element 44 is respectively arranged on the 3rd microstrip element 43
Top and in the same horizontal line；
One end of described first microstrip element 41 is electrically connected with one end of second microstrip element 42
Connect, the other end of described first microstrip element 41 and one end of another the second microstrip element 42
Electrical connection, the other end of one the second microstrip element 42 and the 3rd microstrip element 43
One end electrical connection, the other end of another the second microstrip element 42 described with another the 3rd
One end electrical connection of microstrip element 43, the other end and of one the 3rd microstrip element 43
One end of individual 4th microstrip element 44 connects, another of another the 3rd microstrip element 43 described
End is connected with one end of another the 4th microstrip element 44, one the 4th microstrip element 44
The other end and another the 4th microstrip element 44 the other end respectively with the 5th microstrip element 45
Two ends electrical connection；
Also include two microstrip-fed lines；One end of described microstrip-fed line and corresponding micro-strip spoke
The first microstrip element 41 penetrating district 2 electrically connects, and the other end is corresponding with on main PCB plate 1
Via 31 electrically connects；
Described microstrip-fed line includes the N shape isolation part 32 of a N font and from N shape
The connecting portion 33 that one end, isolation part 32 is extended；The other end of described N shape isolation part 32 with
Via 31 electrically connects；At the arch of said two N shape isolation part 32 the most outside；
The edge of described main PCB plate 1 is provided with a circle micro-strip isolation loop wire 11.
Designed by continuous microstrip circuit structure, and by constantly test and parameter adjustment
Under, finally determine this microstrip circuit structure, all show in 800MHZ to 950MHZ frequency range
Excellent communication electric parameter performance is concrete, than big before and after the minimum frequency of single radiating element
Than average more than 32dB before and after in 30dB, frequency band；Low frequency dot gains is more than 9.37dBi, frequently
In band, average gain is more than 9.8dBi.
Concrete actual test result such as following table HFSS15 computed in software:
| Test frequency range section | Before and after in frequency band than | Corresponding gain |
| 800MHz | 31.225dB | 9.3521dBi |
| 820MHz | 31.927dB | 9.4956dBi |
| 850MHz | 32.312dB | 9.5352dBi |
| 870MHz | 32.807dB | 9.6149dBi |
| 890MHz | 33.635dB | 9.7550dBi |
| 910MHz | 33.908dB | 9.8321dBi |
| 920MHz | 34.135dB | 9.9115dBi |
| 940MHz | 35.232dB | 9.9960dBi |
| 950MHz | 36.000dB | 10.200dBi |
As shown above, it all shows excellent communication electricity in 800MHz to 950MHz frequency range
Gas performance parameters, concrete, before and after the minimum frequency of single radiating element, ratio is all higher than 31dB,
At 950MHz, before and after the minimum frequency of single radiating element, ratio is 36dB；And low frequency dot gains
Being all higher than 9.35dBi, in frequency band, average gain is more than 9.8dBi.
Specifically intercept before and after four frequency ranges than datagram and three frequency ranges from experimental data
Gain data figure, such as Fig. 5 to Figure 11, achieve excellent at 800MHz to 950MHz
Ratio characteristic front and back, wherein, when 800MHz, such as Fig. 5, in its frequency band before and after ratio for 31.225dB；
When 890MHz, such as Fig. 6, in its frequency band before and after ratio for 33.635dB；When 920MHz,
Such as Fig. 7, in its frequency band before and after ratio for 34.135dB；When 950MHz, such as Fig. 8, its frequency
Than for 36.000dB before and after in band；And the performance in gain: such as Fig. 9, it is at 800MHz
Time, its gain reaches: 9.3521dBi；Such as Figure 10, it is when 890MHz, and its gain reaches
Arrive: 9.7550dBi；Such as Figure 11, it is when 950MHz, and its gain reaches: 10.200dBi；
It is known that ratio is more than 33dB before and after in it is average, its gain is averagely more than 9.8dBi.
A kind of unipolarity micro-strip oscillator described in the present embodiment, also includes two microstrip-fed lines；
One end of described microstrip-fed line is electric with the first microstrip element 41 of corresponding micro-strip radiation area 2
Connecting, the via 31 that the other end is corresponding with on main PCB plate 1 electrically connects；By this structure,
Can realize merging integration by feed line and main PCB plate 1, i.e. microstrip circuit easily.
A kind of unipolarity micro-strip oscillator described in the present embodiment, the conduction of described each microstrip element
Layer thickness d is between 0.5mm-1.5mm.As described in Figure 4, the thickness of described d i.e. etches
The thickness of PCB upper monolayer copper clad layers；Being positioned at this thickness, it can be effectively increased pcb board steadiness,
The i.e. stability of microstrip circuit, has and can guarantee that the realization realizing above-mentioned experimental data；It is unlikely to again
Blocked up, and the mutual interference increased.
A kind of unipolarity micro-strip oscillator described in the present embodiment, described microstrip-fed line includes one
The N shape isolation part 32 of individual N font and the connecting portion extended from one end, N shape isolation part 32
33；The other end of described N shape isolation part 32 electrically connects with via 31；Said two N shape every
Away from the arch in portion 32 the most outside.Increase and all outwards increase experimentally at N shape isolation part 32 and arch
Having added the isolation between feed line, reduction interferes with each other, and reduces because feed line mutual interference produces
False coupling.
A kind of unipolarity micro-strip oscillator described in the present embodiment, described 3rd microstrip element 43 with
A T-shaped micro-strip T-shaped isolation part 5 it is additionally provided with between 4th microstrip element 44；This structure
Can be effectively increased product isolation, in software emulation, isolation is up to 30dB.
A kind of unipolarity micro-strip oscillator described in the present embodiment, the arc on arc limit 21 in described micro-strip
Degree angle α 1 is 90 °-120 °.When this radian α 1, by experiment and emulation and
Test finds, in the range of this radian, it is achieved the optimal stability of above-mentioned experimental data eventually.
A kind of unipolarity micro-strip oscillator described in the present embodiment, the centre of described each microstrip element
Being provided with a two is the middle through hole 6 for rectangle of arc.It is filled with titanium dioxide in described through hole 6
Silicon semiconductor.This structure, adds current path length, indirectly in single microstrip element
Add radiation gain and front and back than, communication performance improves further.
A kind of unipolarity micro-strip oscillator described in the present embodiment, the edge of described main PCB plate 1 sets
There is a circle micro-strip isolation loop wire 11.This structure can be effectively increased product isolation, at software
In emulation, isolation is up to 30dB.
A kind of unipolarity micro-strip oscillator described in the present embodiment, up and down the two of described main PCB plate 1
Side is provided with jagged micro-strip isolation tooth trace 12；This structure can have continuation effect increase product every
From degree, in software emulation, isolation is up to 30dB.
A kind of unipolarity micro-strip oscillator described in the present embodiment, the micro-strip radiation area of described main PCB
The upper and lower of 2 is equipped with two sections of micro-strip isolation straight lines 13 in the same horizontal line, described
The close two ends of two sections of micro-strip straight lines are provided with isolation microstrip capacitor；Isolation microstrip capacitor can have
Effect removes the even signal produced near micro-strip isolation tooth trace 12 when isolation, increases signal pure.
A kind of unipolarity micro-strip oscillator described in the present embodiment, the mid portion of described microstrip element
Edge indentation；As it is shown on figure 3, this structure achieve microstrip element radiation level and
Gain degree, this structure, in single microstrip element, add current path length, indirectly
Add radiation gain and front and back than, communication performance improves further；In software emulation and reality
In the middle of the measuring and calculating of border, gain is remarkably reinforced, and increases 0.2-0.6dBi in original gain.
The above is only a preferred embodiment of the present invention, therefore all according to present patent application scope
The equivalence that described structure, feature and principle is done changes or modifies, and is included in patent of the present invention
In the protection domain of application.
Claims (4)
1. a unipolarity micro-strip oscillator, it is characterised in that: include main PCB plate (1),
Two micro-strip radiation areas (2) it are symmetrically arranged with on described main PCB plate (1)；Described each micro-
Band radiation area (2) includes in micro-strip arc limit (22) under arc limit (21) and micro-strip, described
In micro-strip, under arc limit (21) and micro-strip, arc limit (22) Guan Bi forms a region closed；Institute
The microstrip element of multiple 1/2nd independent wavelength it is provided with in stating each micro-strip radiation area (2)；
Between the alleviating distention in middle-JIAO of described each microstrip element two ends narrow in dumbbell shaped；The plurality of independent 1/2nd
Wave microstrip unit be divided into first microstrip element (41), two the second microstrip elements (42),
Two the 3rd microstrip elements (43), two the 4th microstrip elements (44) and one are the 5th micro-
Tape cell (45)；
Described first microstrip element (41) is provided close to the side of arc limit (22) under micro-strip, the
Five microstrip elements (45) are provided close to the side of arc limit (21), said two second in micro-strip
Microstrip element (42) is respectively arranged on the both sides of the top of the first microstrip element (41) and same
On horizontal line, said two the 3rd microstrip element (43) is respectively arranged on two the second microstrip elements
(42) both sides of top and in the same horizontal line, said two the 4th microstrip element (44)
It is respectively arranged on the top and in the same horizontal line of the 3rd microstrip element (43)；
One end of described first microstrip element (41) and the one of second microstrip element (42)
End electrical connection, the other end of described first microstrip element (41) and another second microstrip element
(42) one end electrical connection, the other end of one the second microstrip element (42) and one
One end electrical connection of the 3rd microstrip element (43), another second microstrip element (42) described
The other end electrically connect with one end of another the 3rd microstrip element (43), one the 3rd
The other end of microstrip element (43) and one end of the 4th microstrip element (44) connect, institute
State the other end and another the 4th microstrip element (44) of another the 3rd microstrip element (43)
One end connect, the other end of one the 4th microstrip element (44) and another is the 4th micro-
The other end of tape cell (44) two ends with the 5th microstrip element (45) respectively electrically connect；
Also include two microstrip-fed lines；One end of described microstrip-fed line and corresponding micro-strip spoke
Penetrate the first microstrip element (41) electrical connection in district (2), on the other end and main PCB plate (1)
Corresponding via (31) electrical connection；
Described microstrip-fed line includes the N shape isolation part (32) of a N font and from N
The connecting portion (33) that shape isolation part (32) one end is extended；Described N shape isolation part (32)
The other end electrically connect with via (31)；At the arch of said two N shape isolation part (32) equal
Outwards；
The edge of described main PCB plate (1) is provided with circle micro-strip isolation loop wire (11).
A kind of unipolarity micro-strip oscillator the most according to claim 1, it is characterised in that:
The both sides up and down of described main PCB plate (1) are provided with jagged micro-strip isolation tooth trace (12).
A kind of unipolarity micro-strip oscillator the most according to claim 1, it is characterised in that:
The upper and lower of the micro-strip radiation area (2) of described main PCB is equipped with two sections in same level
On line micro-strip isolation straight line (13), the close two ends of described two sections of micro-strip straight lines be provided with every
From microstrip capacitor.
A kind of unipolarity micro-strip oscillator the most according to claim 1, it is characterised in that: described
The edge indentation of the mid portion of microstrip element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510130612.7A CN106159429A (en) | 2015-03-24 | 2015-03-24 | A kind of unipolarity micro-strip oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510130612.7A CN106159429A (en) | 2015-03-24 | 2015-03-24 | A kind of unipolarity micro-strip oscillator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106159429A true CN106159429A (en) | 2016-11-23 |
Family
ID=58064037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510130612.7A Pending CN106159429A (en) | 2015-03-24 | 2015-03-24 | A kind of unipolarity micro-strip oscillator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106159429A (en) |
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2015
- 2015-03-24 CN CN201510130612.7A patent/CN106159429A/en active Pending
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Application publication date: 20161123 |
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