CN106159013A - A kind of light high-efficiency photovoltaic module - Google Patents

A kind of light high-efficiency photovoltaic module Download PDF

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Publication number
CN106159013A
CN106159013A CN201610725038.4A CN201610725038A CN106159013A CN 106159013 A CN106159013 A CN 106159013A CN 201610725038 A CN201610725038 A CN 201610725038A CN 106159013 A CN106159013 A CN 106159013A
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CN
China
Prior art keywords
photovoltaic module
light high
efficiency photovoltaic
glass
cell piece
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610725038.4A
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Chinese (zh)
Inventor
周健
周礼兰
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Taizhou Zhongsheng sunshine Amperex Technology Limited
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TAITONG TAIZHOU INDUSTRY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to CN201610725038.4A priority Critical patent/CN106159013A/en
Publication of CN106159013A publication Critical patent/CN106159013A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S20/00—Supporting structures for PV modules
    • H02S20/20—Supporting structures directly fixed to an immovable object
    • H02S20/22—Supporting structures directly fixed to an immovable object specially adapted for buildings
    • H02S20/23—Supporting structures directly fixed to an immovable object specially adapted for buildings specially adapted for roof structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A kind of light high-efficiency photovoltaic module, the component layer press seal of described light high-efficiency photovoltaic module is loaded in frame and its back side cross beam support, the parts of described light high-efficiency photovoltaic module include glass, POE, some cell pieces, EVA4 and backing material, use high reflective structure welding to connect between cell piece；It is filled with EVA between the one side of described cell piece and backing material, between the another side of described cell piece and glass, be provided with POE.Avoid lightweight packages in prior art and mitigate limited, the limited efficacy of general components and the defect affecting installed capacity.

Description

A kind of light high-efficiency photovoltaic module
Technical field
The present invention relates to field of photovoltaic technology, particularly to a kind of light high-efficiency photovoltaic module.
Background technology
With reaching its maturity of solar photovoltaic technology, photovoltaic application is just being increasingly appearing in us at one's side, Both at home and abroad it can be seen that more and more build owner to build photovoltaic system on the roof of oneself, but many owners are earnestly While concern photovoltaic application, also compare and concern as to whether to affect building safety, the quality in power station, it is desirable to assembly quality is lighter, anti- Fire hierarchically secure is high, and limited space mounting amount is bigger etc.
Current commonly used reduction lightweight packages, thinning thickness of glass, reduces aluminium frame weight, but weight reduction is limited； In order to improve fire line and anti-PID performance, use solar double-glass assemblies mode, but lightweight packages mitigates limited.The effect of general components Rate is limited, affects installed capacity.
Content of the invention
For solving the problems referred to above, the invention provides a kind of light high-efficiency photovoltaic module, it is to avoid assembly in prior art Weight saving is limited, the limited efficacy of general components and the defect affecting installed capacity.
In order to overcome deficiency of the prior art, the invention provides the solution of a kind of light high-efficiency photovoltaic module, Specific as follows:
A kind of light high-efficiency photovoltaic module, the component layer press seal of described light high-efficiency photovoltaic module is loaded on frame and its back side In cross beam support, the parts of described light high-efficiency photovoltaic module include glass the 1st, POE2, some cell pieces the 3rd, EVA4 and back side material Material 5, uses high reflective structure welding to connect between cell piece；It is filled with EVA between the one side of described cell piece and backing material, It is provided with POE between the another side of described cell piece and glass.
The light high-efficiency photovoltaic module of the present invention has the advantage that
1. the weight of assembly can reduce the weight of 50% compared with general components, and the back side increases crossbeam and by 2400Pa's Mechanical load；
2. this assembly glass does not have Na ion can reduce the possibility that assembly occurs PID phenomenon；
3. this assembly glass tension is big, and perfect heat-dissipating, the assembly fire protecting performance made is better than general components；
4. high reflective back material+high reflective structure welding that this assembly uses, component power can promote about 2.5%；
5. the every block assembly of the more conventional mono-crystal component of this assembly can increase about 30W, can promote the peace at limited areal for the roof Dressing amount；This assembly can effectively promote assembly ageing-resistant performance.
Brief description
Fig. 1 is the structural representation of light high-efficiency photovoltaic module；
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is described further.
As it is shown in figure 1, the light high-efficiency photovoltaic module of the present invention, the parts laminating packaging of described light high-efficiency photovoltaic module In frame and its back side cross beam support, the parts of described light high-efficiency photovoltaic module include glass the 1st, POE2, some cell pieces 3rd, EVA4 and backing material 5, uses high reflective structure welding to connect between cell piece；The one side of described cell piece and backing material Between be filled with EVA, be provided with POE between the another side of described cell piece and glass.
Described backing material can be photovoltaic back or other insulating materials, and the reflectivity of backing material internal layer reaches More than 93%.
Described glass is the glass of the chemical tempering of thickness 0.85～1.1mm, does not receive ion in glass, it is possible to decrease assembly There is the possibility of PID phenomenon, significantly reduce lightweight packages simultaneously, owing to glass is relatively thin, for mitigating the glass in production process Deformation needs to adjust the size of wire body, in order to run normally on On-line Product body, needs on frame loader at binning procedure Increase assembly apparatus for shaping, it is to avoid due to assembly bending cause frame up during product crush；
POE is a kind of non-polar material, and primary chemical bonds therein is C-C and C-H, uses between battery and glass POE will not provide migrating channels to sodium ion, therefore can fundamentally solve PID problem.
Described cell piece uses M2 monocrystalline PERC battery, and monolithic battery increases effective generating area of 2.2%, meanwhile, effect Rate promotes about 1%.
Use the welding series connected battery piece of high reflective structure；Component power about 2% can be promoted.
Use EVA between cell piece and backing material, on the one hand can effectively reduce material cost, on the other hand permissible The compatibility issue being likely to occur of the silica gel avoided POE and can contact.
The emphasis of the present invention is as follows:
Component lamination is packaged in frame+back side cross beam support, and structure is glass, POE, cell piece, EVA, backing material, electricity Pond uses high reflective structure welding to connect；Backing material can be photovoltaic back or other insulating materials, backing material internal layer Reflectivity reach more than 93% glass to use thickness be the chemically toughened glass of 85～1.1mm；Cell piece uses M2 monocrystalline PERC technology battery；Use POE will not provide migrating channels to sodium ion between battery and glass, fundamentally solve PID Problem.Use EVA between cell piece and backing material, on the one hand can effectively reduce material cost, on the other hand can keep away The compatibility issue being likely to occur of the double-component silicon exempted from POE and touch.
In the way of brief description, the present invention is described above, it will be understood by those of skill in the art that the disclosure It is not limited to embodiments described above, in the case of without departing from the scope of the present invention, can make a variety of changes, change and replace Change.

Claims (5)

1. a light high-efficiency photovoltaic module, it is characterised in that the component layer press seal of described light high-efficiency photovoltaic module is loaded on frame With in its back side cross beam support, the parts of described light high-efficiency photovoltaic module include glass, POE, some cell pieces, EVA and the back of the body Face material, uses high reflective structure welding to connect between cell piece；It is filled with between the one side of described cell piece and backing material EVA, is provided with POE between the another side of described cell piece and glass.
2. light high-efficiency photovoltaic module according to claim 1, it is characterised in that described backing material can be photovoltaic back Plate or other insulating materials, the reflectivity of backing material internal layer reaches more than 93%.
3. light high-efficiency photovoltaic module according to claim 1, it is characterised in that described glass is thickness 0.85～1.1mm The glass of chemical tempering.
4. light high-efficiency photovoltaic module according to claim 3, it is characterised in that at the dress of the glass of described chemical tempering In frame operation, its frame loader using increases assembly apparatus for shaping.
5. light high-efficiency photovoltaic module according to claim 1, it is characterised in that described cell piece uses M2 monocrystalline PERC Battery.
CN201610725038.4A 2016-08-25 2016-08-25 A kind of light high-efficiency photovoltaic module Pending CN106159013A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610725038.4A CN106159013A (en) 2016-08-25 2016-08-25 A kind of light high-efficiency photovoltaic module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610725038.4A CN106159013A (en) 2016-08-25 2016-08-25 A kind of light high-efficiency photovoltaic module

Publications (1)

Publication Number Publication Date
CN106159013A true CN106159013A (en) 2016-11-23

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110176514A (en) * 2019-07-03 2019-08-27 浙江晶科能源有限公司 A kind of two-sided photovoltaic module and photovoltaic system
CN111285617A (en) * 2020-02-10 2020-06-16 晶澳（扬州）太阳能科技有限公司 Glass backboard for photovoltaic module packaging and preparation method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103474499A (en) * 2013-09-25 2013-12-25 韩华新能源（启东）有限公司 High-reflection assembly
US20140230899A1 (en) * 2011-09-22 2014-08-21 Lisec Austria Gmbh Module and method for producing thereof
CN203895477U (en) * 2014-04-30 2014-10-22 宁波华顺太阳能科技有限公司 Solar cell module
CN204315596U (en) * 2014-12-24 2015-05-06 无锡德鑫太阳能电力有限公司 A kind of light-duty and PID free photovoltaic module
CN105870228A (en) * 2016-06-02 2016-08-17 苏州思博露光伏能源科技有限公司 Light photovoltaic module

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140230899A1 (en) * 2011-09-22 2014-08-21 Lisec Austria Gmbh Module and method for producing thereof
CN103474499A (en) * 2013-09-25 2013-12-25 韩华新能源（启东）有限公司 High-reflection assembly
CN203895477U (en) * 2014-04-30 2014-10-22 宁波华顺太阳能科技有限公司 Solar cell module
CN204315596U (en) * 2014-12-24 2015-05-06 无锡德鑫太阳能电力有限公司 A kind of light-duty and PID free photovoltaic module
CN105870228A (en) * 2016-06-02 2016-08-17 苏州思博露光伏能源科技有限公司 Light photovoltaic module

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110176514A (en) * 2019-07-03 2019-08-27 浙江晶科能源有限公司 A kind of two-sided photovoltaic module and photovoltaic system
CN111285617A (en) * 2020-02-10 2020-06-16 晶澳（扬州）太阳能科技有限公司 Glass backboard for photovoltaic module packaging and preparation method
CN111285617B (en) * 2020-02-10 2023-03-31 晶澳(扬州)新能源有限公司 Glass backboard for photovoltaic module packaging and preparation method

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Application publication date: 20161123