CN106158235A - A kind of micron order magnetic flux assembles thin film and preparation method thereof - Google Patents
A kind of micron order magnetic flux assembles thin film and preparation method thereof Download PDFInfo
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- CN106158235A CN106158235A CN201610770315.3A CN201610770315A CN106158235A CN 106158235 A CN106158235 A CN 106158235A CN 201610770315 A CN201610770315 A CN 201610770315A CN 106158235 A CN106158235 A CN 106158235A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/14—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
Abstract
A kind of micron order magnetic flux assembles thin film and preparation method thereof, belongs to magnetic sensor technologies field.The permalloy film of equal thickness and the permalloy film mixing chromium are alternately repeated the micron-sized magnetic flux of formation and assemble thin film by the present invention, intensity of magnetization gradient difference △ M is there is between the permalloy film of chromium and unadulterated permalloy film owing to mixing, this intensity of magnetization gradient difference △ M can produce and be perpendicular to the demagnetizing field of face and make the magnetic moments parallel of thin film in face, accordingly even when the thickness of plural layers reaches micron order, do not have magnetic moment to be distributed outside face yet, i.e. will not produce anisotropy outside face so that thin film has good magnetic flux and assembles performance.Lattice Matching between permalloy film of the present invention and the permalloy film mixing chromium, will not produce the soft magnet performance of stress and deleterious film when forming plural layers；The present invention uses two kinds of magnetospheres to be alternatively formed magnetic flux gathering thin film, it is ensured that magnetic flux is assembled the saturation magnetization of thin film and do not reduced.
Description
Technical field
The invention belongs to magnetic sensor technologies field, be specifically related to a kind of micron order magnetic flux and assemble thin film and preparation side thereof
Method.
Background technology
Magnetic Sensor is closely bound up with the life of the mankind, has been widely used for the fields such as Aero-Space, automobile, industry.
Sensor based on magneto-resistance effect the most progressively enters owing to having high sensitivity, small size, low-power consumption and the feature such as easy of integration
Entering Magnetic Sensor market, wherein anisotropic magnetoresistance (AMR) sensor large-scale application, giant magnetoresistance (GMR) senses
Device is the most in the ascendant, and fast-developing, tunnel magneto resistance (TMR) sensor is owing to having high sensitivity and GMR width dynamic range etc.
Advantage have also been obtained to be paid close attention to widely.
The detection of magnetic field ability i.e. sensitivity improving Magnetic Sensor is one of goal in research of Magnetic Sensor industry, by
Add magnetic flux collector near magnetic susceptibility unit, the magnetic line of force through Magnetic Sensor just can be allowed to concentrate as far as possible, and with sensing
Device sensitive axes direction is parallel, thus improves the sensitivity of sensor.
Magnetic flux collector is made up of the soft magnetic materials with low-coercivity, and it can be by following derivation to the aggregation of magnetic flux
Simple declaration.
Assume that soft magnetic bodies is placed on uniform external magnetic field HextIn, the most now the magnetic flux density of soft magnetic bodies is
B=μ0(H+M)=μ0μrH (1)
Wherein, μ0For permeability of vacuum, μrFor the relative permeability of soft magnetic bodies, M is the intensity of magnetization of soft magnetic bodies, and H is effect
In the magnetic field intensity within soft magnetic bodies.Obtained by formula (1)
M=(μr-1)H (2)
And act on the magnetic field H within soft magnetic bodies and be
H=Hext+Hd (3)
HdIt it is the demagnetizing field of soft magnetic bodies.Soft magnetic bodies to homogeneous isotropism, the demagnetizing field of its all directions (x, y and z)
For
(Hd)x,y,z=-Nx,y,zM (4)
Nx,y,zIt is the demagnetizing factor of its correspondence direction respectively.So magnetic field of soft magnetic bodies all directions is
Hx,y,z=(Hext)x,y,z-Nx,y,z(μr-1)Hx,y,z (5)
Thus the magnetic flux density of certain direction of soft magnetic bodies (being assumed to be x direction) is
Very near, it is believed that the magnetic flux acted on sensor is close in the case of approximation in view of Magnetic Sensor distance soft magnetic bodies
Degree is Bx, then gain factor
Can be drawn by formula (7), work as Nxμr< < when 1, have
G=μr (8)
From formula (8), the gain factor of magnetic flux collector depends mainly on the pcrmeability of material, and the pcrmeability of material
Closely related with its coercivity, coercivity is the least, and pcrmeability is the biggest.Thin-film integration device generally use NiFe or CoZrNb close
Gold thin film prepares magnetic flux collector.Further, analyzing from principle, as flux paths, film thickness need to reach micron dimension
Can preferably realize magnetic flux aggregation, but after soft magnetic film exceedes critical thickness (critical thickness of NiFe about～300nm)
There will be anisotropy outside extra face, make the coercivity of thin film increase considerably, the pcrmeability of thin film declines, and affects magnetic flux and gathers
Collection effect, but also magnetic flux collector can be made to produce complicated domain structure, make the response of sensor that Barkhausen to occur
(Barkhuausen) noise and magnetic hysteresis.
Permalloy is a kind of iron-nickel alloy, is widely used, such as magnetic recording head in microelectronics industry.But
It is that, when using sputtering method deposition permalloy film, when film thickness is more than 300nm, thin film easily grows along (111) direction,
Form column structure, direction induced anisotropic outside face, form bar shaped magnetic domain, substantially increase the coercivity of thin film, make
The pcrmeability of thin film significantly declines.In order to suppress the columnar growth of thin film, it is thus achieved that the permalloy film of micron order thickness, mesh
Front conventional method is that inserting thickness is the nonmagnetic layer of 10nm between the thickness permalloy film less than 200nm, enters
And obtain micron order thin film.But, the method introduces nonmagnetic layer, on the one hand reduces the saturation magnetization of thin film, separately
On the one hand do not mate due to lattice between permalloy film with nonmagnetic layer there is stress so as to get the magnetic conductance of micron order thin film
Rate is greatly lowered, it is impossible to meet the requirement of magnetic flux collector well.
Summary of the invention
The present invention is directed to the defect that background technology exists, it is proposed that a kind of micron order magnetic flux assembles thin film and preparation side thereof
Method.The permalloy film of equal thickness and the permalloy film mixing chromium are alternately repeated the micron-sized magnetic flux of formation and gather by the present invention
, there is intensity of magnetization gradient difference △ M between the permalloy film of chromium and unadulterated permalloy film owing to mixing in collection thin film,
This intensity of magnetization gradient difference △ M can produce be perpendicular to face demagnetizing field and make the magnetic moments parallel of thin film in face, accordingly even when
The thickness of plural layers reaches micron order, does not also have magnetic moment and is distributed outside face, i.e. will not produce anisotropy outside face so that
Thin film has good magnetic flux and assembles performance.
Technical scheme is as follows:
A kind of micron order magnetic flux assembles thin film, the 2n layer film being alternatively formed including thin film A, thin film B；As described thin film A
During for permalloy film, thin film B is the permalloy film mixing chromium, when thin film A is the permalloy film mixing chromium, and thin film
B is permalloy film；Described thin film A is identical with the thickness of thin film B.
Further, described thin film A is identical with the thickness of thin film B, is 50～100nm.
Further, described permalloy is iron-nickel alloy, and wherein the mass fraction of nickel is 78%～82%.
Preferably, described permalloy is iron-nickel alloy, and wherein the mass fraction of nickel is 81%, and the mass fraction of ferrum is
19%.
Further, mixing the percentage by weight of chromium in the permalloy of chromium described in is 1%～5%.
Further, described permalloy film uses magnetron sputtering method to prepare, and wherein, back end vacuum is for being less than
10-8Mbar, sputter gas is argon, and sputtering pressure is 1.5 × 10-4～2.0 × 10-4mbar。
Further, described in mix chromium permalloy film use magnetron sputtering method prepare, wherein, back end vacuum is
Less than 10-8Mbar, sputter gas is argon, and sputtering pressure is 1.5 × 10-4～2.0 × 10-4mbar。
A kind of micron order magnetic flux assembles the preparation method of thin film, comprises the following steps:
Step 1: successively use acetone, ethanol and deionized water to be carried out substrate, cleans and is placed under nitrogen atmosphere
It is dried；
Step 2: the substrate after step 1 cleaning-drying is positioned on fixture, described fixture is formed along base by permanent magnet
The bias-field of the 200Oe on sheet surface, is subsequently placed in magnetron sputtering apparatus vacuum chamber, uses magnetron sputtering method to sink at substrate surface
Long-pending 50～100nm thick thin film A, wherein, back end vacuum is less than 10-8Mbar, sputter gas is argon, and sputtering pressure is 1.5
×10-4～2.0 × 10-4mbar；
Step 3: the deposition on substrate using the band thin film A that the method identical with step 2 obtain in step 2 is thick with thin film A
Spend identical thin film B；When described thin film A is permalloy film, thin film B is the permalloy film mixing chromium, when thin film A is for mixing
During the permalloy film of chromium, thin film B is permalloy；
Step 4: step 2 and step 3 are repeated several times, until the thickness of thin film reaches requirement, i.e. can get described micro-
Meter level magnetic flux assembles thin film.
Further, described permalloy is iron-nickel alloy, and wherein the mass fraction of nickel is 78%～82%.
Preferably, described permalloy is iron-nickel alloy, and wherein the mass fraction of nickel is 81%, and the mass fraction of ferrum is
19%.
Further, mixing the percentage by weight of chromium in the permalloy of chromium described in is 1%～5%.
The invention have the benefit that
1, the permalloy film of equal thickness and the permalloy film mixing chromium are alternately repeated formation micron order by the present invention
Magnetic flux assemble thin film, due to mix exist between the permalloy film of chromium and unadulterated permalloy film the intensity of magnetization ladder
Degree difference △ M, this intensity of magnetization gradient difference △ M can produce be perpendicular to face demagnetizing field and make the magnetic moments parallel of thin film in face,
Accordingly even when the thickness of plural layers reaches micron order, do not have magnetic moment yet and be distributed outside face, i.e. will not produce outside face respectively to
The opposite sex so that thin film has good magnetic flux and assembles performance.
2, the Lattice Matching between permalloy film of the present invention and the permalloy film mixing chromium, is forming plural layers
Shi Buhui produces stress and the soft magnet performance of deleterious film；The present invention uses permalloy film and the permalloy film mixing chromium
Both magnetospheres are alternatively formed magnetic flux and assemble thin film, it is ensured that magnetic flux is assembled the saturation magnetization of thin film and do not reduced；This
The preparation that bright magnetic flux assembles thin film employing permalloy film is the most available with etching technics, it is not necessary to additionally increase technical costs,
Can be advantageously applied in production practices.
Accompanying drawing explanation
Fig. 1 assembles the structural representation of thin film for the micron order magnetic flux that the present invention provides；
Fig. 2 is the hysteresis curve that the magnetic flux that embodiment 1 obtains assembles thin film；Wherein, Easy axis represents easy axis direction
Hysteresis curve, i.e. parallel with magnetic direction during preparation direction；Hard axis represents difficult axial hysteresis curve, i.e. with system
The direction that time standby, magnetic direction is vertical；
Fig. 3 is the hysteresis curve that the magnetic flux that comparative example obtains assembles thin film.
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment, technical scheme is described in detail in detail.
Comparative example
A kind of micron order magnetic flux assembles thin film, and described thin film is the permalloy film of 2 μ m-thick, and described permalloy is ferrum
Nickel alloy, wherein the mass fraction of nickel is 81%, and the mass fraction of ferrum is 19%.
Above-mentioned micron order magnetic flux assembles the preparation method of thin film, specifically includes following steps:
Step 1: successively use acetone, ethanol and deionized water to be carried out substrate, cleans and is placed under nitrogen atmosphere
It is dried；
Step 2: the substrate after step 1 cleaning-drying is positioned on fixture, described fixture is formed along base by permanent magnet
The bias-field of the 200Oe on sheet surface, is subsequently placed in magnetron sputtering apparatus vacuum chamber, when back end vacuum is less than 10-8After mbar, to
Being passed through 5N level work argon in vacuum chamber, the flow of regulation argon makes operating air pressure be maintained at 1.8 × 10-4Mbar, uses magnetic control
Sputtering method deposits the permalloy film of 2 μ m-thick at substrate surface, i.e. obtains micron order magnetic flux and assembles thin film.
Embodiment 1
A kind of micron order magnetic flux assembles thin film, including permalloy film, mixes what the permalloy film of chromium was alternatively formed
20 layer films；Described permalloy film is identical with the thickness of the permalloy film mixing chromium, for 100nm；Described permalloy
For iron-nickel alloy, wherein the mass fraction of nickel is 81%, and the mass fraction of ferrum is 19%；Chromium in the described permalloy mixing chromium
Percentage by weight is 5%.
Above-mentioned micron order magnetic flux assembles the preparation method of thin film, specifically includes following steps:
Step 1: successively use acetone, ethanol and deionized water to be carried out substrate, cleans and is placed under nitrogen atmosphere
It is dried；
Step 2: the substrate after step 1 cleaning-drying is positioned on fixture, described fixture is formed along base by permanent magnet
The bias-field of the 200Oe on sheet surface, is subsequently placed in magnetron sputtering apparatus vacuum chamber, when back end vacuum is less than 10-8After mbar, to
Being passed through 5N level work argon in vacuum chamber, the flow of regulation argon makes operating air pressure be maintained at 1.8 × 10-4Mbar, uses magnetic control
Sputtering method is at permalloy film thick for substrate surface deposition 100nm；
Step 3: use the method identical with step 2 deposit on the permalloy that step 2 obtains 100nm thick mix chromium
Permalloy film；
Step 4: the process of repetition step 2 and step 3 10 times, can obtain the magnetic flux that thickness is 2 μm on substrate and assemble
Thin film.
Use vibrating specimen magnetometer respectively along substrate magnetic direction (permanent magnet formed bias-field) i.e. easy axis direction with
It is perpendicular to the magnetic flux that embodiment 1 obtains by the direction i.e. hard axis direction in magnetic field assemble the hysteresis curve of thin film and test, result
As shown in Figure 2；Use vibrating specimen magnetometer respectively along substrate magnetic direction (bias-field that permanent magnet is formed) i.e. easy axis direction
The hysteresis curve assembling thin film with the direction magnetic flux that i.e. comparative example is obtained by hard axis direction being perpendicular to magnetic field is tested, result
As shown in Figure 3.From Fig. 2,3, two hysteresis curves of the thin film of 2 μ m-thick that comparative example is only formed by permalloy, i.e. with
The hysteresis curve that during preparation, magnetic direction is parallel with vertical is identical, and the thin film that comparative example obtains shows magnetic outside obvious face
Changing characteristic, the coercivity of thin film is 12.5Oe, has been far longer than coercivity the wanting less than 1Oe that excellent magnetic flux collector needs
Ask；The 2 μ m-thick magnetic fluxs that embodiment 1 obtains are assembled thin film and are showed interior magnetization characteristic of appearing, and demonstrate by magnetic field during sputtering
Induction can be inducted interior magnetic anisotropy of appearing, and the size of anisotropy field is 5Oe, the most easy axle or difficult axial
Coercivity the most significantly declines, and the coercivity of easy axis direction is 0.63Oe, and difficult axial coercivity is 0.95Oe, fully meets
The requirement of magnetic flux collector.
Embodiment 2
The present embodiment differs only in embodiment 1: first thin at the permalloy mixing chromium that deposition on substrate 100nm is thick
Film, then redeposited permalloy film thick for 100nm, is repeated 10 times, and obtains the magnetic flux that thickness is 2 μm and assembles thin film.
It is available that the hysteresis curve of the magnetic flux gathering thin film by obtaining embodiment 2 carries out test, and embodiment 2 obtains
Thin film shows interior magnetization characteristic of appearing, and interior magnetic anisotropy of appearing of simultaneously inducting, the size of anisotropy field is 5.4Oe, easy axle
Direction coercivity is 0.28Oe, and hard axis direction coercivity is 0.33Oe, fully meets the requirement of magnetic flux collector.
Embodiment 3
The present embodiment differs only in embodiment 1: mixing the percentage by weight of chromium in the permalloy of chromium is 2%, its
Yu Jun is same as in Example 1.
It is available that the hysteresis curve of the magnetic flux gathering thin film by obtaining embodiment 3 carries out test, and embodiment 3 obtains
Thin film shows interior magnetization characteristic of appearing, and interior magnetic anisotropy of appearing of simultaneously inducting, the size of anisotropy field is 6.4Oe, easy axle
Direction coercivity is 0.36Oe, and hard axis direction coercivity is 0.49Oe, fully meets the requirement of magnetic flux collector.
Embodiment 4
The present embodiment differs only in embodiment 1: in step 2 and step 3 deposition permalloy film and mix chromium
The thickness of permalloy film be 50nm, the number of times repeated in step 4 is 20 times, obtains the magnetic flux that thickness is 2 μm and assembles thin
Film.
It is available that the hysteresis curve of the magnetic flux gathering thin film by obtaining embodiment 4 carries out test, and embodiment 4 obtains
Thin film shows interior magnetization characteristic of appearing, and interior magnetic anisotropy of appearing of simultaneously inducting, the size of anisotropy field is 5.6Oe, easy axle
Direction coercivity is 0.32Oe, and hard axis direction coercivity is 0.26Oe, fully meets the requirement of magnetic flux collector.
Claims (8)
1. micron order magnetic flux assembles a thin film, the 2n layer film being alternatively formed including thin film A, thin film B；When thin film A is perm
During alloy firm, thin film B is the permalloy film mixing chromium, and when thin film A is the permalloy film mixing chromium, thin film B is slope
Not alloy firm；Described thin film A is identical with the thickness of thin film B.
Micron order magnetic flux the most according to claim 1 assembles thin film, it is characterised in that described thin film A and the thickness of thin film B
Identical, it is 50～100nm.
Micron order magnetic flux the most according to claim 1 assembles thin film, it is characterised in that described permalloy is that ferrum nickel closes
Gold, wherein the mass fraction of nickel is 78%～82%.
Micron order magnetic flux the most according to claim 1 assembles thin film, it is characterised in that described permalloy is that ferrum nickel closes
Gold, wherein the mass fraction of nickel is 81%, and the mass fraction of ferrum is 19%.
Micron order magnetic flux the most according to claim 1 assembles thin film, it is characterised in that described in mix chromium in the permalloy of chromium
Percentage by weight be 1%～5%.
Micron order magnetic flux the most according to claim 1 assembles thin film, it is characterised in that described permalloy film uses magnetic
Control sputtering method prepares, and wherein, back end vacuum is less than 10-8Mbar, sputter gas is argon, and sputtering pressure is 1.5 × 10-4～2.0 × 10-4mbar。
Micron order magnetic flux the most according to claim 1 assembles thin film, it is characterised in that described in mix the permalloy film of chromium
Employing magnetron sputtering method prepares, and wherein, back end vacuum is less than 10-8Mbar, sputter gas is argon, and sputtering pressure is
1.5×10-4～2.0 × 10-4mbar。
8. micron order magnetic flux assembles a preparation method for thin film, comprises the following steps:
Step 1: successively use acetone, ethanol and deionized water to be carried out substrate, cleaning is placed under nitrogen atmosphere and is dried；
Step 2: the substrate after step 1 cleaning-drying is positioned on fixture, described fixture is formed along substrate table by permanent magnet
The bias-field of the 200Oe in face, is subsequently placed in magnetron sputtering apparatus vacuum chamber, uses magnetron sputtering method to deposit 50 at substrate surface
～the thin film A that 100nm is thick, wherein, back end vacuum is less than 10-8Mbar, sputter gas is argon, and sputtering pressure is 1.5 × 10-4～2.0 × 10-4mbar；
Step 3: use deposition on substrate and the thin film A thickness phase of the band thin film A that the method identical with step 2 obtain in step 2
Same thin film B；When described thin film A is permalloy film, thin film B is the permalloy film mixing chromium, when thin film A is to mix chromium
During permalloy film, thin film B is permalloy；
Step 4: step 2 and step 3 are repeated several times, until the thickness of thin film reaches requirement, i.e. can get described micron order
Magnetic flux assembles thin film.
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| JPH01245506A (en) * | 1988-03-26 | 1989-09-29 | Nippon Telegr & Teleph Corp <Ntt> | Magnetic multilayered film and manufacture thereof |
| JPH01260805A (en) * | 1988-04-12 | 1989-10-18 | Citizen Watch Co Ltd | Magnetic thin film for thin film magnetic head |
| US20050202285A1 (en) * | 2004-03-02 | 2005-09-15 | Fuji Electric Holdings Co., Ltd. | Perpendicular magnetic recording medium and method of manufacturing same |
| CN1921168A (en) * | 2006-09-14 | 2007-02-28 | 电子科技大学 | Ferroalloy nitride nanometer giant-magnetic resistant thin film material and its preparing method |
| CN101345117A (en) * | 2008-05-09 | 2009-01-14 | 北京科技大学 | Magnetic resistor thin-film material used for magnetic electronic compass and preparation method thereof |
| CN102231423A (en) * | 2011-06-28 | 2011-11-02 | 电子科技大学 | Giant magneto-impedance (GMI) thin film material and preparation method thereof |
-
2016
- 2016-08-30 CN CN201610770315.3A patent/CN106158235A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01245506A (en) * | 1988-03-26 | 1989-09-29 | Nippon Telegr & Teleph Corp <Ntt> | Magnetic multilayered film and manufacture thereof |
| JPH01260805A (en) * | 1988-04-12 | 1989-10-18 | Citizen Watch Co Ltd | Magnetic thin film for thin film magnetic head |
| US20050202285A1 (en) * | 2004-03-02 | 2005-09-15 | Fuji Electric Holdings Co., Ltd. | Perpendicular magnetic recording medium and method of manufacturing same |
| CN1921168A (en) * | 2006-09-14 | 2007-02-28 | 电子科技大学 | Ferroalloy nitride nanometer giant-magnetic resistant thin film material and its preparing method |
| CN101345117A (en) * | 2008-05-09 | 2009-01-14 | 北京科技大学 | Magnetic resistor thin-film material used for magnetic electronic compass and preparation method thereof |
| CN102231423A (en) * | 2011-06-28 | 2011-11-02 | 电子科技大学 | Giant magneto-impedance (GMI) thin film material and preparation method thereof |
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