CN106154673A - Display floater and preparation method thereof - Google Patents
Display floater and preparation method thereof Download PDFInfo
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- CN106154673A CN106154673A CN201510177525.7A CN201510177525A CN106154673A CN 106154673 A CN106154673 A CN 106154673A CN 201510177525 A CN201510177525 A CN 201510177525A CN 106154673 A CN106154673 A CN 106154673A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
- G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/004—Optical devices or arrangements for the control of light using movable or deformable optical elements based on a displacement or a deformation of a fluid
- G02B26/005—Optical devices or arrangements for the control of light using movable or deformable optical elements based on a displacement or a deformation of a fluid based on electrowetting
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Abstract
The present invention provides a kind of display floater and preparation method thereof.Display floater includes array base palte, multiple transparent conductive oxide pattern and display medium.Array base palte includes substrate and is sequentially laminated on the first metal layer on substrate, the first insulating barrier, semiconductor layer, the second metal level and the second insulating barrier.Substrate has action zone and Wiring area.The first metal layer and the second metal level are extended to Wiring area by action zone, and define multiple first wiring and multiple second wiring respectively.Transparent conductive oxide pattern is configured on the second insulating barrier, is positioned at Wiring area and corresponding second wiring respectively.The orthographic projection on substrate of each transparent conductive oxide pattern is overlapped in the second orthographic projection being wired on substrate of correspondence.Display medium is configured on array base palte.The setting of transparent conductive oxide pattern of the present invention can effectively prevent and block the situation that the second wiring is directly exposed in air, can be effectively improved the structural reliability of display floater.
Description
Technical field
The present invention relates to a kind of display floater and preparation method thereof, particularly relate to one and have more highly reliable
Display floater of degree and preparation method thereof.
Background technology
In existing panel layout (layout) designs, the array base palte of display floater is at the fan of terminals side
Go out (fan-out) region and mostly use the line construction of monolayer (single layer).Therefore, if covering fan
Going out the protective layer of wire when producing broken hole because of process variation, the fan out-conductor of this protective layer closest can be sudden and violent
It is exposed in air, and then oxidized or corrosion, and affect the structural reliability of overall display floater.
Summary of the invention
The present invention provides a kind of display floater and preparation method thereof, has preferably structural reliability.
The display floater of the present invention, it includes array base palte, multiple transparent conductive oxide pattern and display
Medium.Array base palte include substrate and be sequentially laminated on the first metal layer on substrate, the first insulating barrier,
Semiconductor layer, the second metal level and the second insulating barrier.Substrate has action zone and is positioned at action zone week
The Wiring area enclosed.The first metal layer and the second metal level are extended to Wiring area by action zone, and define respectively
Go out multiple first wiring and multiple second wiring.Transparent conductive oxide pattern is configured on the second insulating barrier
And it is positioned at Wiring area, wherein transparent conductive oxide pattern corresponding second wiring respectively, and each electrically conducting transparent
Oxidation pattern orthographic projection on substrate is overlapped in the second orthographic projection being wired on substrate of correspondence.Display
Medium is configured on array base palte.
In one embodiment of this invention, above-mentioned transparent conductive oxide pattern is not attached to each other.
In one embodiment of this invention, the material of above-mentioned transparent conductive oxide pattern is indium tin oxide
Or indium-zinc oxide.
In one embodiment of this invention, the bearing of trend of above-mentioned each transparent conductive oxide pattern is with right
The bearing of trend of the second wiring answered is identical.
In one embodiment of this invention, the just throwing on substrate of the above-mentioned each transparent conductive oxide pattern
The width of shadow is more than the live width of the second corresponding wiring.
In one embodiment of this invention, the thickness of above-mentioned transparent conductive oxide pattern is micro-between 0.042
Rice is between 0.08 micron.
In one embodiment of this invention, the above-mentioned transparent conductive oxide pattern being positioned at Wiring area and active
The edge in district is separated by the first spacing.
In one embodiment of this invention, above-mentioned display floater also includes: at least one drive circuit, joins
Being placed in the periphery circuit region of array base palte, wherein Wiring area is between action zone and periphery circuit region, and
First wiring and the second wiring are connected between drive circuit, and transparent conductive oxide pattern and drive circuit
It is separated by the second spacing.
In one embodiment of this invention, the first above-mentioned wiring equally arranges with the second wiring.
In one embodiment of this invention, above-mentioned display medium includes that electrophoretic display thin film or electricity are moistening aobvious
Show thin film.
The manufacture method of the display floater of the present invention, it comprises the following steps.Form array base palte to include carrying
Substrate and sequentially formation the first metal layer, the first insulating barrier, semiconductor layer, the second gold medal on substrate
Belonging to layer and the second insulating barrier, wherein substrate has action zone and the Wiring area being positioned at around action zone,
The first metal layer and the second metal level are extended to Wiring area by action zone, and define multiple first respectively and connect
Line and multiple second wiring.Form multiple transparent conductive oxide pattern and to be positioned at and connect on the second insulating barrier
Line district, wherein transparent conductive oxide pattern corresponding second wiring respectively, and each transparent conductive oxide pattern
Orthographic projection on substrate is overlapped in the second orthographic projection being wired on substrate of correspondence.Configuration display medium
On array base palte.
In one embodiment of this invention, above-mentioned transparent conductive oxide pattern is not attached to each other.
In one embodiment of this invention, the material of above-mentioned transparent conductive oxide pattern is indium tin oxide
Or indium-zinc oxide.
In one embodiment of this invention, the bearing of trend of above-mentioned each transparent conductive oxide pattern is with right
The bearing of trend of the second wiring answered is identical.
In one embodiment of this invention, the just throwing on substrate of the above-mentioned each transparent conductive oxide pattern
The width of shadow is more than the live width of the second corresponding wiring.
In one embodiment of this invention, the thickness of above-mentioned transparent conductive oxide pattern is micro-between 0.042
Rice is between 0.08 micron.
In one embodiment of this invention, the above-mentioned transparent conductive oxide pattern being positioned at Wiring area and active
The edge in district is separated by the first spacing.
In one embodiment of this invention, the manufacture method of above-mentioned display floater also includes: configuration is at least
One drive circuit is in a periphery circuit region of array base palte, and wherein Wiring area is positioned at action zone and peripheral circuit
Between district, and the first wiring and the second wiring are connected to drive circuit, and transparent conductive oxide pattern with drive
The second spacing it is separated by between galvanic electricity road.
In one embodiment of this invention, the first above-mentioned wiring equally arranges with the second wiring.
In one embodiment of this invention, above-mentioned display medium includes that an electrophoretic display thin film or an electricity are wet
Profit display thin film.
Based on above-mentioned, due to the display floater of the present invention have that correspondence is configured in the second fan-out wiring saturating
Bright electric conductive oxidation pattern, therefore produces broken hole compared to existing insulating barrier, and then will connect because of process variation
Line is exposed in air for causing wire oxidation or corrosion, setting of transparent conductive oxide pattern of the present invention
Put the situation that can effectively prevent and block the second wiring to be directly exposed in air, display surface can be effectively improved
The structural reliability of plate.
For the features described above of the present invention and advantage can be become apparent, special embodiment below, and coordinate
Accompanying drawing is described in detail below.
Accompanying drawing explanation
Figure 1A is the local schematic top plan view of a kind of display floater of one embodiment of the invention；
Figure 1B is the partial cutaway schematic of the display floater of Figure 1A.
Description of reference numerals:
100: display floater；
110: array base palte；
110a: action zone；
110b: Wiring area；
110c: periphery circuit region；
111: substrate；
112: the first metal layer；
114: the first insulating barriers；
115: semiconductor layer；
116: the second metal levels；
118: the second insulating barriers；
120: transparent conductive oxide pattern；
130: display medium；
140: drive circuit；
D1: the first spacing；
D2: the second spacing；
F1: the first wiring；
F2: the second wiring.
Detailed description of the invention
Figure 1A is the local schematic top plan view of a kind of display floater of one embodiment of the invention.Figure 1B is
The partial cutaway schematic of the display floater of Figure 1A.Please also refer to Figure 1A and Figure 1B, at the present embodiment
In, display floater 100 includes that array base palte 110, multiple transparent conductive oxide pattern 120 and display are situated between
Matter 130.Array base palte 110 include substrate 111 and the first metal layer 112 being sequentially laminated on substrate 111,
First insulating barrier 114, semiconductor layer the 115, second metal level 116 and the second insulating barrier 118.Substrate
111 have action zone 110a and the Wiring area 110b being positioned at around the 110a of action zone.The first metal layer 112
And second metal level 116 extended to Wiring area 110b by action zone 110a, and define multiple first respectively
Wiring F1 and multiple second wiring F2.Transparent conductive oxide pattern 120 is configured at the second insulating barrier 118
Go up and be positioned at Wiring area 110b, wherein transparent conductive oxide pattern 120 corresponding second wiring F2 respectively, and
The orthographic projection on substrate 111 of each transparent conductive oxide pattern 120 is overlapped in the second wiring F2 of correspondence
Orthographic projection on substrate 111.Display medium 130 is configured on array base palte 110.
Specifically, array base palte 110 e.g. active component array base board, wherein it is positioned at action zone 110a
In the first metal layer 112 (can be considered grid), the first insulating barrier 114 (can be considered gate insulation layer),
Semiconductor layer the 115, second metal level 116 (can be considered source electrode and drain electrode) and the second insulating barrier 118 can
Define at least one thin film transistor (TFT).The first metal layer extended toward Wiring area 110b from action zone 110a
112 are defined as the first wiring F1 in the 110b of Wiring area, and are prolonged from action zone 110a toward Wiring area 110b
The second metal level 116 stretched is defined as the second wiring F2 in the 110b of Wiring area.First wiring F1 is each other
Separate, and the second wiring F2 is separated from one another, and the first wiring F1 and the second wiring F2 equally arranges.
Furthermore, the most corresponding second wiring F2 configuration of the transparent conductive oxide pattern 120 of the present embodiment, thoroughly
The orthographic projection on substrate 111 of the bright electric conductive oxidation pattern 120 is overlapped in the second wiring F2 of correspondence in substrate
Orthographic projection on 111.It is to say, the orthographic projection that transparent conductive oxide pattern 120 is on substrate 111
The most it is not overlapped in first wiring F1 orthographic projection on substrate 111.The display floater 100 of the present embodiment
The purpose arranging transparent conductive oxide pattern 120 is: the first wiring F1 can be learnt by Figure 1B, on it
It is coated with the first insulating barrier 114 and double-layer structure layer of the second insulating barrier 118, but, the second wiring
F2 only covers first insulating layer 118 on it.Therefore, cause second exhausted when running into process variation
(hole or the cutting of rear processing procedure as produced by the chemical gaseous phase of front processing procedure deposits when edge layer 118 produces broken hole
What program was caused ruptures), the second wiring F2 being positioned at this second insulating barrier 118 neighbouring will be exposed to
In air.Therefore, the present embodiment configures transparent conductive patterns more than 120 in the top of the second wiring F2
One layer of protection, can be prevented effectively from the situation being exposed in air by the second wiring F2 because of process variation and produce
Raw, and then the structural reliability of display floater 100 can be improved.
For further, the transparent conductive oxide pattern 120 of the present embodiment is not attached to, this means, each other
Single transparent electric conductive oxidation pattern 120 is correspondingly arranged on single second wiring F2.As shown in Figure 1A,
The bearing of trend substantially phase of the bearing of trend of transparent conductive oxide pattern 120 and the second corresponding wiring F2
With, but be not limited thereto.The width of the transparent conductive oxide pattern 120 orthographic projection on substrate 111
Substantially the live width slightly larger than the second corresponding wiring F2, can effectively cover the second wiring F2.It is preferred that
The thickness of transparent conductive oxide pattern 120 is between 0.042 micron to 0.08 micron.Electrically conducting transparent oxygen
Change material for example, indium tin oxide or the indium-zinc oxide of pattern 120, but not to be limited.Wherein,
Above-mentioned material needs the film layer using light shield step (such as picture element together with last in display floater 100 processing procedure
Electrode) material identical, therefore can need not additionally be further added by the use number of light shield on processing procedure, can not
Increase the cost of manufacture of product.
Additionally, as shown in Figure 1A, the display floater 100 of the present embodiment can also include at least one drive circuit
140, it is configured at the periphery circuit region 110c of array base palte 110, wherein Wiring area 110b is positioned at action zone 110a
And between the 110c of periphery circuit region, and the first wiring F1 and the second wiring F2 is connected to drive circuit 140.
Herein, the edge of the transparent conductive oxide pattern 120 and action zone 110a that are positioned at Wiring area 110b is separated by the
One space D 1, and between transparent conductive oxide pattern 120 and drive circuit 140, it is separated by the second space D 2.
In other words, transparent conductive oxide pattern 120 be only located in the 110b of Wiring area and with action zone 110a and week
Limit circuit region 110c is respectively the most spaced a distance, consequently, it is possible to can avoid transparent conductive oxide pattern 120 with
Element and drive circuit 140 in the 110a of action zone produce and electrically connect and cause the situation of signal shorts.
It addition, the display medium 130 e.g. electrophoretic display thin film of the present embodiment or electricity moistening display thin film.
In other words, the display floater 100 e.g. electrophoretic display panel of the present embodiment or Electrowetting display panel.
Certainly, in other unshowned embodiments, display medium is alternatively liquid crystal layer or other suitable displays
Medium, is not any limitation as in this.
On processing procedure, refer again to Figure 1A and Figure 1B, first, form array base palte 110 and include providing
Substrate 111 and sequentially on substrate 111 formed the first metal layer the 112, first insulating barrier 114, partly lead
Body layer the 115, second metal level 116 and the second insulating barrier 118, wherein substrate 111 has action zone
110a and the Wiring area 110b being positioned at around the 110a of action zone, the first metal layer 112 and the second metal
Layer 116 is extended to Wiring area 110b by action zone 110a, and defines the first wiring F1 and the respectively
Two wiring F2.Then, form transparent conductive oxide pattern 120 and to be positioned at and connect on the second insulating barrier 118
Line district 110b, wherein transparent conductive oxide pattern 120 respectively corresponding second wiring F2, and each transparent lead
The electroxidation pattern 120 orthographic projection on substrate 111 is overlapped in the second wiring F2 of correspondence in substrate 111
On orthographic projection.Herein, transparent conductive oxide pattern 120 and the action zone 110a of Wiring area 110b it are positioned at
Edge be separated by the first space D 1.Finally, display medium 130 it is reconfigured on array base palte 110.Need
Illustrating, the manufacture method of the display floater 100 of the present embodiment also can also include configuring at least one driving
Circuit 140 is in a periphery circuit region 110c of array base palte 110, and wherein Wiring area 110b is positioned at action zone
Between 110a and periphery circuit region 110c, and the first wiring F1 and the second wiring F2 is connected to drive electricity
The second space D 2 it is separated by between road 140, and transparent conductive oxide pattern 120 and drive circuit 140.Also
That is, in the transparent conductive oxide pattern 120 of the present embodiment is only located at Wiring area 110b and and action zone
110a and periphery circuit region 110c is the most spaced a distance, consequently, it is possible to electrically conducting transparent oxygen can be avoided
Change pattern 120 to produce and electrically connect with the element in the 110a of action zone and drive circuit 140 and cause signal
The situation of short circuit.So far, the making of display floater 100 has been completed.
In sum, due to the display floater of the present invention have that correspondence is configured in the second fan-out wiring saturating
Bright electric conductive oxidation pattern, therefore produces broken hole compared to existing insulating barrier, and then will connect because of process variation
Line is exposed in air for causing wire oxidation or corrosion, setting of transparent conductive oxide pattern of the present invention
Put the situation that can effectively prevent and block the second wiring to be directly exposed in air, display surface can be effectively improved
The structural reliability of plate.
Last it is noted that various embodiments above is only in order to illustrate technical scheme, rather than right
It limits；Although the present invention being described in detail with reference to foregoing embodiments, this area common
Skilled artisans appreciate that the technical scheme described in foregoing embodiments still can be modified by it,
Or the most some or all of technical characteristic is carried out equivalent；And these amendments or replacement, and
The essence not making appropriate technical solution departs from the scope of various embodiments of the present invention technical scheme.
Claims (20)
1. a display floater, it is characterised in that including:
Array base palte, including substrate and be sequentially laminated on the first metal layer on described substrate, the first insulating barrier, semiconductor layer, the second metal level and the second insulating barrier, wherein said substrate has action zone and is positioned at the Wiring area around described action zone, described the first metal layer and described second metal level are extended to described Wiring area by described action zone, and define multiple first wiring and multiple second wiring respectively；
Multiple transparent conductive oxide patterns, it is configured on described second insulating barrier and is positioned at described Wiring area, wherein those transparent conductive oxide patterns those second wiring the most corresponding, and the orthographic projection that each described transparent conductive oxide pattern is on described substrate are overlapped in the described second orthographic projection being wired on described substrate of correspondence；And
Display medium, is configured on described array base palte.
Display floater the most according to claim 1, it is characterised in that those transparent conductive oxide patterns are not attached to each other.
Display floater the most according to claim 1, it is characterised in that the material of those transparent conductive oxide patterns is indium tin oxide or indium-zinc oxide.
Display floater the most according to claim 1, it is characterised in that the bearing of trend of each described transparent conductive oxide pattern is identical with the bearing of trend of corresponding described second wiring.
Display floater the most according to claim 4, it is characterised in that the width of each described transparent conductive oxide pattern orthographic projection on described substrate is more than the live width of corresponding described second wiring.
Display floater the most according to claim 1, it is characterised in that the thickness of each described transparent conductive oxide pattern is between 0.042 micron to 0.08 micron.
Display floater the most according to claim 1, it is characterised in that the edge of the more described transparent conductive oxide pattern and described action zone that are positioned at described Wiring area is separated by the first spacing.
Display floater the most according to claim 7, it is characterised in that also include:
At least one drive circuit, it is configured at the periphery circuit region of described array base palte, wherein said Wiring area is between described action zone and described periphery circuit region, and those first wiring and those second wiring are connected between described drive circuit, and those transparent conductive oxide pattern and described drive circuits be separated by the second spacing.
Display floater the most according to claim 1, it is characterised in that those first wiring equally arrange with those second wiring.
Display floater the most according to claim 1, it is characterised in that described display medium includes electrophoretic display thin film or electricity moistening display thin film.
The manufacture method of 11. 1 kinds of display floaters, it is characterised in that including:
Form array base palte, including: substrate is provided and on described substrate, sequentially forms the first metal layer, the first insulating barrier, semiconductor layer, the second metal level and the second insulating barrier, wherein said substrate has action zone and is positioned at the Wiring area around described action zone, described the first metal layer and described second metal level are extended to described Wiring area by described action zone, and define multiple first wiring and multiple second wiring respectively；
Form multiple transparent conductive oxide pattern and and be positioned at described Wiring area on described second insulating barrier, wherein those transparent conductive oxide patterns those second wiring the most corresponding, and the orthographic projection that each described transparent conductive oxide pattern is on described substrate are overlapped in the described second orthographic projection being wired on described substrate of correspondence；And
Configuration display medium is on described array base palte.
The manufacture method of 12. display floaters according to claim 11, it is characterised in that those transparent conductive oxide patterns are not attached to each other.
The manufacture method of 13. display floaters according to claim 11, it is characterised in that the material of those transparent conductive oxide patterns is indium tin oxide or indium-zinc oxide.
The manufacture method of 14. display floaters according to claim 11, it is characterised in that the bearing of trend of each described transparent conductive oxide pattern is identical with the bearing of trend of corresponding described second wiring.
The manufacture method of 15. display floaters according to claim 14, it is characterised in that the width of each described transparent conductive oxide pattern orthographic projection on described substrate is more than the live width of corresponding described second wiring.
The manufacture method of 16. display floaters according to claim 11, it is characterised in that the thickness of each described transparent conductive oxide pattern is between 0.042 micron to 0.08 micron.
The manufacture method of 17. display floaters according to claim 11, it is characterised in that the edge of those transparent conductive oxide patterns and described action zone of being positioned at described Wiring area is separated by the first spacing.
The manufacture method of 18. display floaters according to claim 17, it is characterised in that also include:
Configure at least one drive circuit in a periphery circuit region of described array base palte, wherein said Wiring area is between described action zone and described periphery circuit region, and those first wiring and those second wiring are connected between described drive circuit, and those transparent conductive oxide pattern and described drive circuits be separated by the second spacing.
The manufacture method of 19. display floaters according to claim 11, it is characterised in that those first wiring equally arrange with those second wiring.
The manufacture method of 20. display floaters according to claim 11, it is characterised in that described display medium includes electrophoretic display thin film or electricity moistening display thin film.
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| CN201510177525.7A CN106154673A (en) | 2015-04-15 | 2015-04-15 | Display floater and preparation method thereof |
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| CN201510177525.7A CN106154673A (en) | 2015-04-15 | 2015-04-15 | Display floater and preparation method thereof |
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| CN106154673A true CN106154673A (en) | 2016-11-23 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11348552B2 (en) | 2018-03-28 | 2022-05-31 | Boe Technology Group Co., Ltd. | Method for determining data processing sequence, display apparatus and display method thereof |
| US11695017B2 (en) | 2018-10-11 | 2023-07-04 | Boe Technology Group Co., Ltd. | Array substrate, display panel, and display device |
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| US11348552B2 (en) | 2018-03-28 | 2022-05-31 | Boe Technology Group Co., Ltd. | Method for determining data processing sequence, display apparatus and display method thereof |
| US11695017B2 (en) | 2018-10-11 | 2023-07-04 | Boe Technology Group Co., Ltd. | Array substrate, display panel, and display device |
| US11935901B2 (en) | 2018-10-11 | 2024-03-19 | Boe Technology Group Co., Ltd. | Array substrate, display panel, and display device |
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Application publication date: 20161123 |