CN106148906A - Evaporation coating device - Google Patents
Evaporation coating device Download PDFInfo
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- CN106148906A CN106148906A CN201610323551.0A CN201610323551A CN106148906A CN 106148906 A CN106148906 A CN 106148906A CN 201610323551 A CN201610323551 A CN 201610323551A CN 106148906 A CN106148906 A CN 106148906A
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- Prior art keywords
- guided wave
- chamber
- module
- target
- evaporation coating
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3471—Introduction of auxiliary energy into the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
The present invention relates to the use of the evaporation coating device of microwave.According to the evaporation coating device utilizing microwave of the present invention, to supplying gas between guided wave module and the target of irradiating microwaves, the region of the region separating the chamber being provided with guided wave module and the chamber being provided with target.So, suppressing target material guide mode block side shifting, therefore suppression target material is deposited with in guided wave module side.Thus, prevent because target material is deposited with the granule Particle produced in guided wave module side) make the film in substrate to be deposited impaired with electric arc (Arcing) phenomenon, therefore there is the effect that can improve film quality.Further, since elongated for removing the upkeep operation cycle being deposited with in the target material of guided wave module, therefore can have cost-effective effect.
Description
Technical field
The present invention relates to one can suppress target (Target) material to be deposited with the evaporation dress in light guide module
Put.
Background technology
Evaporation coating device is roughly divided into chemical vapor coating (Chemical Vapor Deposition) device and thing
Reason vapor coating (Physical Vapor Deposition) device, representative in physical vapor evaporation coating device
Have sputtering (Sputtering) device.
Sputter equipment is widely used in and is manufacturing display device, semiconductor device, solaode or having
Metallic film required during machine light-emitting device etc. or metal-oxide film, use material being formed by thin film
Constitute target (Target) surface on collide energy particle, the target particle come off from target is deposited with in
On substrate.
The most it is being widely used sputtering technology, but sputter procedure can produce high pressure/high energy, therefore
There is the problem that thin film to be formed is damaged.In order to solve this problem, be currently in use make use of micro-
The sputtering etc. of ripple (Microwave).
Existing high efficiency AC magnetism disclosed in flat for Japanese Laid-Open Patent Publication Laid-Open No. 6-17247
Control sputter equipment illustrates
Described sputter equipment is, the one end side of microwave introduction part 1 is positioned at chamber interior, and with circle
The outer peripheral face of cylindrical cathode 4 adjoins.
Therefore, existing sputter equipment is, the target material generated at negative electrode 7 is deposited with in microwave importing
The one end in portion 1, because the target material at the one end evaporation of microwave introduction part 1 produces granule
(Particle) with arc phenomenon (Arcing).So, granule and arc phenomenon can damage to be deposited in film forming
, therefore there is the shortcoming that film quality is low in the film of gas 9.
It addition, the one end in microwave introduction part 1 is easily deposited with target material, therefore should be with of short duration
Cycle carry out the operation of target material that is deposited with for the one end removed in microwave introduction part 1.Cause
, there is the shortcoming that cost is enhanced in this.
Summary of the invention
(problem to be solved)
It is an object of the invention to provide a kind of utilization of all the problems solving prior art
The evaporation coating device of microwave.
Another object of the present invention is to provide the following evaporation coating device utilizing microwave: guide mode block
Between spray gas and suppress target material guide mode block side shifting, and then can improve and be deposited with in base
The quality of the film of plate, simultaneously can also be cost-effective, and wherein guided wave module is irradiated with target side to target
Guided wave.
(solving the means of problem)
Evaporation coating device according to the interests microwave for reaching the above-mentioned purpose present invention includes: chamber, interior
Portion is formed and puts into substrate and carry out the space processed, and is formed for spraying to described space at outside plate
The ejection section of gas；Target module, is arranged on the described chamber interior with described real estate pair, and
Have by for forming the target that the material of film is constituted at described substrate；Guided wave module, is arranged on described
The described outside plate of chamber, and guide microwave to irradiate to described target side, wherein, can be to described target
It is ejected through, between module and described guided wave module, the gas that described ejection section is sprayed to described chamber interior
Body.
(effect of invention)
According to the evaporation coating device utilizing microwave of the present invention, to the guided wave module of irradiating microwaves and target it
Between supply gas, the region separating the chamber being provided with guided wave module and the chamber being provided with target
Region.So, suppress target material guide mode block side shifting, therefore suppression target material be deposited with in
Guided wave module side.Thus, prevent because target material is deposited with the granule produced in guided wave module side
Particle) make the film in substrate to be deposited impaired with electric arc (Arcing) phenomenon, therefore have and can improve
The effect of film quality.
Further, since become for removing the upkeep operation cycle being deposited with in the target material of guided wave module
Long, therefore can have cost-effective effect.
Accompanying drawing explanation
Fig. 1 is to illustrate the summary sectional view that evaporation coating device according to a first embodiment of the present invention is constituted.
Fig. 2 is the expanded view of the target module shown in Fig. 1 and guided wave module position.
Fig. 3 is the major part enlarged cross section figure of evaporation coating device according to a second embodiment of the present invention.
Fig. 4 is the major part enlarged cross section figure of evaporation coating device according to a third embodiment of the present invention.
Fig. 5 is the major part enlarged cross section figure of evaporation coating device according to a fourth embodiment of the present invention.
Fig. 6 is that another of the Magnet of the target module illustrating evaporation coating device according to embodiments of the present invention is joined
The enlarged cross section figure of configuration state.
Fig. 7 is the axonometric chart of the guided wave module of evaporation coating device according to embodiments of the present invention.
Fig. 8 is the sectional view of the width of Fig. 7.
Fig. 9 is the sectional view of guided wave module according to another embodiment of the present invention.
Figure 10 is the sectional view of the guided wave module according to other embodiments of the invention.
Figure 11 is the drawing of the use example illustrating evaporation coating device according to embodiments of the present invention.
(description of reference numerals)
110: chamber
119: ejection section
130: target module
131: target
133: Magnet
150: guided wave module
Specific implementation method
The meaning of the term described in this manual should understand as explained below.
Not being defined as on article beyond clear and definite and different, the statement of odd number is construed as including again
The statement of number.The term such as " first ", " second " is for an element being constituted from other
Key element distinguishes, and must not limit right because of this term.
Be construed as, the term of " including " or " having " etc. do not get rid of the most in advance one or
Its other above features, or numeral, step, element, parts thereof or these combination
Existence or additional probability
The term of " at least one " is construed as including may carrying from more than one relevant item
The all combinations gone out.Such as " at least one in first item, second items and third item "
The meaning not only includes each project of first item, second items or third item, and also meaning that can be from
The combination of all items of more than 2 proposed in first item, second items and third item.
" ... on " term do not mean only that a certain composition directly on other is constituted, also
It is meant to include between these are constituted the situation of the 3rd composition got involved.
Following, the evaporation that utilize microwave according to embodiments of the present invention be explained in detail with reference to the accompanying drawings and fill
Put.
Fig. 1 is to illustrate the summary sectional view that evaporation coating device according to a first embodiment of the present invention is constituted.Figure
2 is the expanded view at the target module shown in Fig. 1 and guided wave module position.
As it can be seen, evaporation coating device according to a first embodiment of the present invention can include forming evaporation space
Chamber 110.Chamber 110 has the multiple outside plates forming gabarit, and can be formed steaming by described outside plate
Plating space.The evaporation space of chamber 110 connects with outside pump installation (not shown), and then is steaming
Vacuum state can be kept during depositing process.
Hereinafter, when referring to the direction including other elements of chamber 110, on the basis of Fig. 1,
Direction on the upside of chamber 110 be referred to as " upside ", the direction on the downside of chamber 110 be referred to as " under
Side ".
Chamber 110 can include the first chamber 111 and the second chamber 115.
First chamber 111 can form hexahedral shape, and can put into substrate 50 and process.
Formed respectively outside the left side outside plate and right side of the first chamber 111 and move into and take out of entering of substrate 50
Mouth 111a and outlet 111b, entrance 111a and outlet 111b can be selected by gate valve (not shown) etc.
Property ground folding.It addition, support can be arranged in the inside of the first chamber 111 and transfers all of substrate 50
As roller or conveyer etc. support/transfer instrument 120.
Second chamber 115 may be provided at upper plate (that is, the upside outside plate of the first chamber 111) to
The upside of the first chamber 111 highlights, and connects with the first chamber 111.
Second chamber 115 comprises the steps that the upper plate at the first chamber 115 extends and phase to upside vertical
The most aspectant a pair vertical plate 116；Extend to upside in the upper surface of vertical plate 116 and with more
The pair of angled plate 117 being formed slopely the closer to mode to upside；And it is formed at the upper of hang plate 117
End face connects the connecting plate 118 of hang plate 117.
Constitute the vertical plate 116 of the second chamber 115, hang plate 117 and connecting plate 118 to be naturally also
The outside plate of chamber 110.
The target module 130 of cylinder type, target can be set in the side, inside center portion of the second chamber 115
Module 130 can include target (Target) 131 and multiple Magnet 133.Inside at the second chamber 115
Arranging target module 130, therefore target module 130 is positioned at the upside of substrate 50 certainly.
Target 131 is formed as cylinder type (cylinder), and can be on the basis of central axis direction
Rotate.Target 131 can be made up of the material of the film to be formed on substrate 50.
Magnet 133 can be simultaneously located at target 131 along the circumferencial direction of target 131 across spacing
Inner peripheral surface side.At this moment, Magnet 133 can have the length corresponding with the length of target 131, and can
Arranging Magnet 133 to position, the downside inner peripheral surface side of target 131, wherein target 131 is towards substrate
50 sides.
Magnetic field is formed between the Magnet 133 adjoined each other, and then can be in the periphery shape of target 131
Become highdensity ion plasma.Magnet 133 is arranged on position, the downside inner peripheral surface side of target 131, because of
This can on the downside of the target 131 to substrate 50 side around formation magnetic field, outer peripheral face side.
Fig. 1 and Fig. 2 exemplified and show greatly on the basis of target 131 4 points, 6 and
8 directions arrange Magnet 133.At this moment, properly configure Magnet 133, at the outer peripheral face of target 131
Side with in 6 directions towards 4 square one-tenth magnetic fields, in the outer peripheral face side of target 131 with 6 sides
To towards formation magnetic field, 8 directions.
Can arrange in the outside of the second chamber 115: gas supply department 140, to including the second chamber 110
The internal supply of chamber 110 include the noble gases such as such as argon (Ar) and oxygen (O2) process gas.
Thus, when chamber 110 is maintained at vacuum, to chamber 110 internal supply process gas
Body, discharges if high voltage puts on target 131 afterwards, then process gas is ionized,
And the cation of ionizable process gas is reacted with target 131.So, jump out from target 131
The target material of shape of particle and then be attached to substrate 50, therefore at substrate 50 evaporation film-forming.
Evaporation coating device according to a first embodiment of the present invention, shines to inside target 133 side of chamber 110
Penetrate microwave (Microwave), and then highdensity ion plasma can be generated.
If to being formed at side, the magnetic field irradiating microwaves of target 133 outer peripheral face side, then by microwave and Magnet
133 magnetic fields produced cause electron cyclotron resonace (ECR:Electron Cyclotron Resonance), because of
This can generate highdensity ion plasma.
Evaporation coating device according to a first embodiment of the present invention can include for the internal photograph of the second chamber 115
Penetrate the guided wave module 150 of microwave.Guided wave module 150 may be provided at the hang plate 117 of the second chamber 115
Outside.At this moment, guided wave module 150 can be divided so that target module 130 to be placed on the shape of centre
It is not arranged on hang plate 117.
In order to more improve the plasma density caused by electron cyclotron resonace, it is preferably to by Magnet
The microwave irradiated by guided wave module 150 is irradiated in the 133 magnetic field center sides formed.
At this moment, it is more preferably, guided wave module 150 is pointed into being formed at target 131 outer peripheral face side
The direction d of the microwave in magnetic field is vertical with imaginary line, and described imaginary line is to be connected to formation magnetic field
The binary some radial direction center with target 131 that is spaced between the Magnet 133 adjoined each other
Imaginary line.
If target material is deposited with in guided wave module 150, then cannot to target 131 side irradiating microwaves, or
The irradiation dose of person's microwave reduces.If it addition, producing because being deposited with in the target material of guided wave module 150
Raw granule (Particle) and electric arc (Arcing) phenomenon, then can damage to be deposited in the film of substrate 50.
Evaporation coating device according to a first embodiment of the present invention may be configured with suppression target material guide mode
The instrument of block 150 side shifting.Described instrument sprays by gas between target 131 and guided wave module 150
The gas of body supply department 140 supply, and then target material guide mode block 150 side shifting can be suppressed.
In detail, the connection of the second chamber 115 between target 131 and guided wave module 150
The position of plate 118 can form ejection section 119 respectively, and ejection section 119 can with gas supply department 140 even
Logical.So, the gas sprayed by ejection section 119 plays air curtain function, therefore target 131 with
Got up by separation between guided wave module 150, therefore, it is possible to suppression target material guide mode block 150 side
Mobile.
At this moment, ejection section 119 can be multiple spray-holes of the length direction formation along target 131,
Or the gap formed along the length direction of target 131.
Fig. 1 and Fig. 2 illustrates and forms the second chamber 115 in the upside of the first chamber 111,
But also can form the second chamber 115 in the downside of the first chamber 111, it is also possible at the first chamber 111
Left side form the second chamber 115, the second chamber can be formed on the right side of the first chamber 111 again
115.At this moment, in the case of each, target module 130 is positioned at the downside of substrate 50, target module 130
Being positioned at the left side of substrate 50, certain target module 130 is positioned at the right side of substrate 50.
Fig. 3 is the major part enlarged cross section figure of evaporation coating device according to a second embodiment of the present invention,
This only illustrates the distinctive points with Fig. 2.
As it can be seen, the ejection section 219 of evaporation coating device according to a second embodiment of the present invention can distinguish shape
One-tenth is in the inclination of the second chamber 215 of the chamber 210 between target 231 and guided wave module 250
The position of plate 217, at this moment, if suitably adjust ejection section 219 towards angle, then can be to target
Gas is sprayed between 231 and guided wave module 250.
In addition composition can be same or like with the composition of Fig. 2.
Fig. 1 to Fig. 3 pass the imperial examinations at the provincial level be illustrated chamber 110,210 have prominent the second chamber 115,
215, but chamber 110,210 may be alternatively formed to the hexahedral shape of the part not highlighted.At this moment,
Target module 130,230 is placed on centre and is respectively provided with guided wave module 150,250 by the upper plate at chamber,
Certainly ejection section 119,219 also may be formed at target module 130,230 and guided wave module 150,250
Between chamber upper plate position.
Fig. 4 is the major part enlarged cross section figure of evaporation coating device according to a third embodiment of the present invention, only
Distinctive points with Fig. 2 is described.
As it can be seen, the ejection section 319 of evaporation coating device according to a third embodiment of the present invention can distinguish shape
Cheng: not between target 331 and guided wave module 350, the second chamber 315 of chamber 310
The position of hang plate 317.At this moment, if suitably adjust ejection section 319 towards angle, then may be used
To spraying gas between target 331 and guided wave module 350.
Ejection section 319 also can be respectively formed at the position of vertical plate 316 certainly.
In addition composition can be same or like with the composition of Fig. 2.
At the exemplified chamber 310 of Fig. 4 there is prominent the second chamber 315, but chamber 310
May be alternatively formed to the hexahedral shape at the position not highlighted.At this moment, can be at the upper plate of chamber by target
Module 319 is placed on centre and is respectively provided with guided wave module 350, and certain ejection section 319 also can be formed respectively
Position between target module 330 chamber upper plate position, non-and guided wave module 350.
Fig. 5 is the major part enlarged cross section figure of evaporation coating device according to a fourth embodiment of the present invention, only
Distinctive points with Fig. 2 is described.
As it can be seen, one is led by the ejection section 419 of evaporation coating device according to a fourth embodiment of the present invention
Mode block 450 is placed on centre, can be respectively formed at the both sides of guided wave module 450, and lead one
Injection that mode block 450 is placed on centre and the gas that sprayed by both sides ejection section 419 can intersect.
At this moment, if suitably adjust ejection section 419 towards angle, then can be to the target of target module 430
Spray gas between 431 and guided wave module 450, a guided wave module 450 is placed on centre also simultaneously
And the gas sprayed by the ejection section 419 of both sides can intersect injection.
Fig. 6 is that another of the Magnet of the target module illustrating evaporation coating device according to embodiments of the present invention is joined
The enlarged cross section figure of configuration state, only explanation and the distinctive points of Fig. 2.
As it can be seen, the Magnet 533 of target module 530 according to embodiments of the present invention is with target 531
Center on the basis of, may be provided at these 4 directions of substantially 4 points, 5 thirty, 6 thirty and at 8.
At this moment, properly configure Magnet 533, in the outer side below of target 531 with from 5 thirty direction towards
Formation magnetic field, 4 directions, in the outer peripheral face side of target 531 with from the direction of 6 thirty towards 8
Formation magnetic field, direction.
With reference to Fig. 2, Fig. 7 and Fig. 8 explanation guided wave module 150 according to embodiments of the present invention.Fig. 7
It it is the axonometric chart of the guided wave module of evaporation coating device according to embodiments of the present invention.Fig. 8 is the width of Fig. 7
The sectional view in direction.
As it can be seen, guided wave module 150 is bootable by the microwave generating unit being arranged on outside chamber 110
The microwave that (not shown) generates is to the internal irradiation of the second chamber 115.Guided wave module 150 can be formed
Tube shape, and electric wave is strapped in the inside transmits, conductor the most around will not directly flow electricity
Stream.Therefore resistance loss is few.It addition, the inside of guided wave module 150 is empty and is filled with air,
Therefore dielectric loss is also few.
Guided wave module 150 can form the rectangular hexahedral shape having regular length with width.Lead
Mode block 150 can include first waveguide pipe the 151, second waveguide pipe 153 and window 155, and can
It is inserted in the through hole 117a (with reference to Fig. 2) of the hang plate 117 being formed at the second chamber 115.
In detail, the first waveguide pipe 151 can form square at width cross sectional shape, and
Can couple with described microwave generating unit.Can be opened below first guided wave plate 151, and can in inside
Form the first guided wave road 151a of the microwave process generated by described microwave generating unit.Due to the first guided wave
Be opened below pipe 151, therefore the position, downside of the first guided wave road 151a certainly with the first guided wave
The outside connection of pipe 151.
Second waveguide pipe 153 can open above and below, and can form the second guided wave road 153a in inside.
The lower surface knot that the upper surface that second waveguide pipe 153 is opened can be opened with the first waveguide pipe 151
Closing, the lower surface that the second waveguide pipe 153 is opened can be combined in the hang plate forming through hole 117a
117。
Second waveguide pipe 153 above and being opened below, the therefore downside of the second guided wave road 153a
Position and position, upside outside with the second waveguide pipe 153 the most respectively connects.Further, if first leads
Wave duct 151 is combined with the second waveguide pipe 153, and the second waveguide pipe 153 is incorporated into hang plate 117,
Then the first guided wave road 151a and the second guided wave road 153a is interconnected, and can connect the second guided wave road
153a and the inside of the second chamber 115.
Window 155 is arranged between the first waveguide pipe 151 and the second waveguide pipe 153, and then can separate
First guided wave road 151a and the second guided wave road 153a.
So, the microwave generated in described microwave generating unit sequentially passes through the first guided wave road 151a → window
155 → the second guided wave road 153a, irradiate to target 131 side of the second chamber 115.
Evaporation coating device according to embodiments of the present invention is, the second waveguide pipe 153 of guided wave module 150
Position, downside will be inserted in through hole 117a.At this moment, the lower surface of the second waveguide pipe 153 can be located at and passes through
The inside of through hole 117a.
So, lower surface and the target 131 of the second waveguide pipe 153 are spaced the longest distance, therefore can
Enough the lower surface in the second waveguide pipe 153 is more prevented to be deposited with target material.It addition, the second guided wave
Pipe 153 only lower end is exposed towards the inner side of the second chamber 115, therefore can be deposited with target material
The position of the second waveguide pipe 153 minimize.Therefore, it is possible to further suppression target material be deposited with in
Second waveguide pipe 153.
For enabling microwave stably to be transmitted through guided wave module 150, in optional aluminum or aluminum alloy
A kind of material forms the first waveguide pipe 151 and the second waveguide pipe 153, and optional microwave can pass through
A kind of formation window 155 in logical pottery or engineering plastics.
In the position of the first guided wave road 151a, the first guided wave road adjacent with the second guided wave road 153a
On the downside of 151a, the width at position can be with the shape taper more become narrow gradually to the second 153a side, guided wave road
Changing and formed, the width of the second guided wave road 153a can be with more to downside (that is, hang plate 117 side)
The narrowest shape possibly tapered is formed.
It addition, for enabling microwave stably to be transmitted, the width of the second guided wave road 153a is preferably
Narrow width than the first guided wave road 151a.At this moment, it is more preferably, connects with the second chamber 115
Side, the bottom width of the second guided wave road 153a formed 10～30 width.
For making the magnetic field energy of microwave and the Magnet 133 irradiated by guided wave module 150 to the second chamber 115
Enough cause electron cyclotron resonace (ECR:Electron Cyclroton Resonance), generate plasma
Region in magnetic field intensity be preferably at more than 800G (Gsuss).
Fig. 9 is the sectional view of guided wave module according to another embodiment of the present invention, and only explanation is with Fig. 8's
Distinctive points.
As shown in Fig. 9 (a), for the short transverse of the first waveguide pipe 151, guided wave module 150
The even width of the first guided wave road 151b of the first waveguide pipe 151, and the of the second waveguide pipe 153
The width of two guided wave road 153a can be formed with the shape possibly tapered more become narrow gradually to downside width.
In addition composition is identical with the composition of Fig. 8.
As shown in Fig. 9 (b), for the short transverse of the first waveguide pipe 151, guided wave module 150
The even width of the first guided wave road 151b of the first waveguide pipe 151, and for the second waveguide pipe 153
Short transverse, the width of the second guided wave road 153b of the second waveguide pipe 153 can be uniform.Except this
Outside composition identical with the composition of Fig. 8.
As shown in Fig. 9 (c), the first guided wave road 151a of the first waveguide pipe 151 of guided wave module 150
Lower side width formed with the shape possibly tapered that more becomes narrow gradually to downside width, and the second waveguide pipe
The width of the second guided wave road 153c of 153 can be formed with gradually broadening, and then can be formed more to downside more
Wide shape.In addition composition is identical with the composition of Fig. 8.
As shown in Fig. 9 (d), for the short transverse of the first waveguide pipe 151, guided wave module 150
The even width of the first guided wave road 151b of the first waveguide pipe 151, and the second waveguide pipe 153
The width of the second guided wave road 153c can be formed with gradually broadening, and then can be formed more the widest to downside
Shape.In addition composition is identical with the composition of Fig. 8.
Figure 10 is the sectional view of the guided wave module according to other embodiments of the invention, only explanation and Fig. 8
Distinctive points.
As it can be seen, guided wave module 160 can include waveguide pipe 161 according to another embodiment of the present invention
With window 165.The cross sectional shape of waveguide pipe 161 width can form square, and with described
Microwave generating unit connects.It is opened and can be combined in chamber 110 (Fig. 1 chamber below waveguide pipe 161
Room), the lower surface being opened can connect with the inside of chamber 110.
Window 165 is incorporated into the lower surface of waveguide pipe 161 to separate chamber 110 and guided wave road 161a.
So, the microwave that described microwave generating unit generates sequentially passes through guided wave road 161a → window 165, to chamber
Target 131 (with reference to Fig. 1) side of room 110 is irradiated.
Only can be formed guided wave module 160 by waveguide pipe 161 and window 165 to be because, by jet
The gas that 119 (with reference to Fig. 1) spray to suppress target material to window 165 side shifting, and then suppression
Target material is deposited with in window 165.
Guided wave road 161a can be same or like with the first guided wave road 151a shown in Fig. 8.
Figure 11 is the drawing of the use example illustrating evaporation coating device according to embodiments of the present invention.
As it can be seen, according to the characteristic of the film to be formed on substrate 50, it is possible to many in line style configuration
Individual evaporation coating device.The buffering evaporation coating device 100a of the pending substrate of multiple input is set i.e., continuously
With processing substrate evaporation coating device 100b, 100c, 100d, by least one of which evaporation coating device 100d
Use as the evaporation coating device 100d being provided with guided wave module 150 according to the present embodiment.
Do not limited by the above embodiments and accompanying drawing in present invention mentioned above, but without departing from
Various replacement can be carried out in the range of the technological thought of the present invention, deform and change, and this is at this
The technical staff that technical field that the present invention belongs to has usual knowledge is obvious.Therefore, the present invention
Scope should be construed to, right embody, and the meaning of claim, scope and with
All changes or the shape of deformation that its equivalent concepts derives should be included in the scope of the present invention.
Claims (15)
1. an evaporation coating device, it is characterised in that including:
Chamber, chamber interior is formed and puts into substrate and carry out the space processed, and in chamber outside plate shape
Become for the ejection section to described space injection gas；
Target module, is arranged on described chamber interior aspectant with described substrate, and have by with
In the target that the material forming film at described substrate is constituted；
Guided wave module, is arranged on the described outside plate of described chamber, and guides microwave to described target side
Irradiate,
Wherein, by described ejection section, to spray between described target module and described guided wave module to
The gas of described chamber interior injection.
Evaporation coating device the most according to claim 1, it is characterised in that
Described target module is placed on centre by described guided wave module, is separately positioned on described target module two
The described outside plate of the described chamber of side,
Described ejection section is formed between described target module and described guided wave module, institute respectively
State the described outside plate position of chamber.
Evaporation coating device the most according to claim 1, it is characterised in that
Described target module is placed on centre by described guided wave module, is separately positioned on described target module two
The described outside plate of the described chamber of side,
Described ejection section is separately positioned on non-described target module in the described outside plate position of described chamber
And the position between described guided wave module.
Evaporation coating device the most according to claim 1, it is characterised in that
Described target module is placed on centre by described guided wave module, is separately positioned on described target module two
The described outside plate of the described chamber of side,
One described guided wave module is placed on centre by described ejection section, is respectively formed at a described guided wave
Module both sides,
It is positioned at the gas that the described jet of described guided wave module both sides sprayed to intersect spray
Penetrate.
Evaporation coating device the most according to claim 1, it is characterised in that
Described chamber has: puts into substrate and carries out the first chamber processed；Prominent it is formed at described the
The described outside plate of one chamber the second chamber with described first chamber,
Wherein, described second chamber has: the described outside plate vertical at described first chamber extends and phase
The most aspectant a pair vertical plate；End face at described vertical plate extends and is formed slopely further away from institute
State the pair of angled plate of vertical plate shape the most close to each other；It is formed at the end face of described hang plate also
Connect the connecting plate of described hang plate,
Described target module is arranged on the inside of described second chamber,
Described target module is placed on centre and is separately positioned on described hang plate by described guided wave module.
Evaporation coating device the most according to claim 5, it is characterised in that
Described ejection section is, is respectively formed between described target module and described guided wave module
The position of described connecting plate, or be respectively formed at be positioned at described target module and described guided wave module it
Between the position of described hang plate.
Evaporation coating device the most according to claim 5, it is characterised in that
Described ejection section is respectively formed in the position of described hang plate non-described target module with described
Position between guided wave module, or described ejection section is respectively formed at non-described target module with described
The position of vertical plate between guided wave module, described.
8. according to the evaporation coating device described in any one in claim 1 to 7, it is characterised in that
Described target forms cylinder type,
Described target module also includes multiple Magnet, and the plurality of Magnet is along the circumference side of described target
The inner peripheral surface side of described target towards described substrate-side, Jin Er it is arranged on while spacing distance
To the formation magnetic field, outer peripheral face side of the described target of described substrate-side,
Imaginary line irradiates and then towards being formed at described target outer peripheral face side with by described guided wave module
The direction orthogonal of microwave in magnetic field, described imaginary line be connect by the described Magnet that adjoins each other it
Between the center of binary point and described target.
Evaporation coating device the most according to claim 8, it is characterised in that
Described ejection section is, multiple spray-holes that the length direction along described target is formed, or edge
The gap that the length direction of described target is formed.
Evaporation coating device the most according to claim 8, it is characterised in that
Described guided wave module includes:
First waveguide pipe, the first waveguide pipe is internally formed the first guided wave road making microwave process, and with
The length direction of described target constitutes parallel；
Second waveguide pipe, the second waveguide pipe side is incorporated into the first waveguide pipe, and the second waveguide pipe another
Side is incorporated into outside the described outside plate of described chamber, and is internally formed the second guided wave in the second waveguide pipe
Road, described second side, guided wave road connects with the second guided wave road, and described second guided wave road opposite side with
The connection of described chamber interior and then guiding microwave irradiate to described chamber interior；
Window, is arranged between described first waveguide pipe and described second waveguide pipe, separates described first
Guided wave road and described second guided wave road,
Wherein, the width on described first guided wave road is more than the width on described second guided wave road.
11. evaporation coating devices according to claim 10, it is characterised in that
The width on the first guided wave road adjacent with described second guided wave road is with more to described second guided wave road
The shape that side becomes narrow gradually is formed slopely.
12. evaporation coating devices according to claim 10, it is characterised in that
The width on described second guided wave road is formed slopely with the shape more become narrow gradually to described chamber side.
13. evaporation coating devices according to claim 10, it is characterised in that
The end side width on the described second guided wave road connected with the inside of described chamber is 10～30mm.
14. evaporation coating devices according to claim 8, it is characterised in that
Described guided wave module includes:
Waveguide pipe, waveguide pipe end face is opened, and the end face being opened is incorporated into the institute of described chamber
State outside outside plate, and then constitute parallel with the length direction of described target, and in the internal shape of waveguide pipe
Become the guided wave road with described chamber；
Window, is incorporated into the end face that described waveguide pipe is opened, and separates described guided wave road with described
Chamber.
15. evaporation coating devices according to claim 14, it is characterised in that
The width on the described guided wave road adjacent with described chamber is more to become narrow gradually to described chamber side
Shape is formed slopely.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2015-0067136 | 2015-05-14 | ||
| KR1020150067136A KR101674615B1 (en) | 2015-05-14 | 2015-05-14 | Depositon apparatus |
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| Publication Number | Publication Date |
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| CN106148906A true CN106148906A (en) | 2016-11-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610323551.0A Pending CN106148906A (en) | 2015-05-14 | 2016-05-16 | Evaporation coating device |
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| KR (1) | KR101674615B1 (en) |
| CN (1) | CN106148906A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107164724A (en) * | 2017-05-11 | 2017-09-15 | 合肥京东方显示技术有限公司 | The quantity of coating machine and target particulate determines method |
| CN107904558A (en) * | 2017-12-15 | 2018-04-13 | 京东方科技集团股份有限公司 | Evaporated device and evaporation coating method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3079775B1 (en) * | 2018-04-06 | 2021-11-26 | Addup | MAGNETIC CONTAINER HEATING DEVICE FOR SELECTIVE ADDITIVE MANUFACTURING APPLIANCE |
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| KR100765389B1 (en) * | 2006-05-01 | 2007-10-10 | 세메스 주식회사 | Apparatus for vapor deposition of organic thin film using air curtain |
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| DE4126216B4 (en) * | 1991-08-08 | 2004-03-11 | Unaxis Deutschland Holding Gmbh | Device for thin-film processes for the treatment of large-area substrates |
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| JPH0617247A (en) * | 1992-07-01 | 1994-01-25 | Asahi Glass Co Ltd | High-efficiency ac magnetron sputtering device |
| CN1087130A (en) * | 1992-11-16 | 1994-05-25 | 四川大学 | The high-vacuum multi-target magnetic control sputtering method and apparatus |
| KR100765389B1 (en) * | 2006-05-01 | 2007-10-10 | 세메스 주식회사 | Apparatus for vapor deposition of organic thin film using air curtain |
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| CN107164724A (en) * | 2017-05-11 | 2017-09-15 | 合肥京东方显示技术有限公司 | The quantity of coating machine and target particulate determines method |
| CN107164724B (en) * | 2017-05-11 | 2019-04-23 | 合肥京东方显示技术有限公司 | The quantity of coating machine and target particle determines method |
| CN107904558A (en) * | 2017-12-15 | 2018-04-13 | 京东方科技集团股份有限公司 | Evaporated device and evaporation coating method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101674615B1 (en) | 2016-11-09 |
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