CN106145117B - A kind of reduction furnace feeding method in production of polysilicon - Google Patents
A kind of reduction furnace feeding method in production of polysilicon Download PDFInfo
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- CN106145117B CN106145117B CN201510102981.5A CN201510102981A CN106145117B CN 106145117 B CN106145117 B CN 106145117B CN 201510102981 A CN201510102981 A CN 201510102981A CN 106145117 B CN106145117 B CN 106145117B
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- polysilicon
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 31
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 11
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 3
- 239000005052 trichlorosilane Substances 0.000 claims description 3
- 239000002994 raw material Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 208000012839 conversion disease Diseases 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Abstract
The present invention relates to the reduction furnace feeding method in production of polysilicon, it is divided into the following three stage：The initial charge stage：The feed time in the stage is from the 0th hour to the 20th hour, and inlet amount is in the unit interval that inlet amount increases over time from 0kg to 800kg, and in the whole fill process in the stage in direct ratioly to increase；The steady charging stage：The feed time in the stage be from the 20th hour to the 60th hour, wherein, inlet amount be from 800kg to 1200kg, and in the whole fill process in the stage cause the unit interval in inlet amount increase over time keep it is constant；The quick feeding stage：The feed time in the stage be from the 60th hour to the 100th hour, wherein, inlet amount is to cause that inlet amount is increased over time and reduced in direct ratioly in the unit interval from 1200kg to 2100kg, and in the whole fill process in the stage.This method can reduce the material quantity in production of polysilicon, save cost.
Description
Technical field
The invention belongs to technical field of polysilicon production, the reduction technique being related in production of polysilicon, more particularly to it is a kind of
Reduction furnace feeding method in production of polysilicon.
Background technology
At present, universal in polysilicon production process reduced using reduction furnace.But in current polysilicon
In production, the inlet amount of reduction furnace and the charging proportioning and dosage in silicon rod different growth period, more using by production when
Between linearly increased feeding manner.The shortcomings that material quantity is big, and reaction conversion rate is low be present in this feeding manner.Product per ton
Material quantity really participates in the possible only at 3 tons or so of reaction typically between 21-25 tons, wherein the overwhelming majority is not joined
Just directly recovery system is entered with reaction from discharging opening.Therefore, there is many deficiencies and waste in current feeding manner, increase
The production cost of enterprise is added.
Therefore, there is an urgent need to the inlet amount to reduction furnace in polycrystalline silicon production and time at present to optimize proportioning.
The content of the invention
It is contemplated that overcome the deficiencies in the prior art, there is provided a kind of reduction furnace feeding method in production of polysilicon, should
Method can make the material quantity in production of polysilicon per ton be reduced to 6-10 tons by present 21-25 tons, be saved for polysilicon enterprise
Great amount of cost.
Therefore, the present invention provides following technical scheme：A kind of reduction furnace feeding method in production of polysilicon, it is by contact
Charging is divided into the following three stage in former stove：
(1) the initial charge stage：
The feed time in the stage be from the 0th hour to the 20th hour, wherein, inlet amount be from 0kg to 800kg, and should
Cause that inlet amount is increased over time and increased in direct ratioly in the unit interval in the whole fill process in stage；
(2) the steady charging stage：
The feed time in the stage be from the 20th hour to the 60th hour, wherein, inlet amount be from 800kg to 1200kg,
And make it that it is constant to increase over time holding for inlet amount in the unit interval in the whole fill process in the stage；
(3) the quick feeding stage：
The feed time in the stage be from the 60th hour to the 100th hour, wherein, inlet amount be from 1200kg to
2100kg, and cause that inlet amount is increased over time and subtracted in direct ratioly in the unit interval in the whole fill process in the stage
It is few.
Further, wherein, the material entered is trichlorosilane.
Growth period and temperature of the reduction furnace feeding method according to reduction furnace different phase in the production of polysilicon of the present invention
Changing rule, new reduction furnace feeding ratio is used, using raw material and conversion ratio, harvest more effectively can have been improved
Rate, save raw material dosage.Reduction furnace progress method in the production of polysilicon of the present invention can make the original in production of polysilicon per ton
Material dosage is reduced to 6-10 tons by present 21-25 tons, produces the hydrogen usage of every kilogram of polysilicon from 12-14M3Drop to 6-
8M3, so as to save great amount of cost for polysilicon enterprise.
Brief description of the drawings
Fig. 1 is the inlet amount of reduction furnace feeding method and the curve map of feed time in the production of polysilicon of the present invention.
Embodiment
The embodiment of the present invention is described in detail below in conjunction with the accompanying drawings, the content of embodiment is not as to this
The restriction of the protection domain of invention.
The present invention relates to the reduction furnace in production of polysilicon to carry out method, and this method can make the original in production of polysilicon per ton
Material dosage is reduced to 6-10 tons by present 21-25 tons, produces the hydrogen usage of every kilogram of polysilicon from 12-14M3Drop to 6-
8M3, so as to save great amount of cost for polysilicon enterprise.
Fig. 1 shows the inlet amount of reduction furnace feeding method and the curve of feed time in the production of polysilicon of the present invention
Figure.As shown in figure 1, the reduction furnace feeding method in production of polysilicon of the present invention will be divided into three toward charging in reduction furnace
Stage, i.e. initial charge stage, steady charging stage and quick feeding stage.
Wherein, the initial charge stage is preceding 20 hours of charging, i.e. the feed time in the stage is small from the 0th
When by the 20th hour.In the initial charge stage, inlet amount is from 0kg to 800kg, i.e. the inlet amount when stage starts
For 0kg, at the end of the stage, charging total amount is 800kg.Meanwhile when causing unit in whole fill process at this stage
Interior inlet amount increases over time to be increased in direct ratioly, i.e. inlet amount is minimum in the unit interval during beginning, at the end of it is single
Inlet amount is most in the time of position, and inlet amount and time increase in direct ratioly in the unit interval from start to end.
The steady charging stage was in after the initial charge stage, and the feed time in the stage is from the 20th hour
By the 60th hour.In the steady charging stage, inlet amount is from 800kg to 1200kg, i.e. the reduction furnace when stage starts
Interior raw material is 800kg, and at the end of the stage, the raw material in reduction furnace is 1200kg.Meanwhile whole charging at this stage
During inlet amount is increased over time and is equably increased, i.e. in whole fill process at this stage, the unit interval
Interior inlet amount is identical, is increased over time, and inlet amount is kept constant in the unit interval.
The quick feeding stage was in after the steady charging stage, and the feed time in the stage is from the 60th hour
By the 100th hour.In the quick feeding stage, inlet amount is from 1200kg to 2100kg, i.e. the stage reduces when starting
Raw material in stove is 1200kg, and at the end of the stage, the raw material in reduction furnace is 2100kg.Meanwhile at this stage whole
Cause that inlet amount is increased over time and reduced in direct ratioly in the unit interval in fill process, i.e. unit interval during beginning
Interior inlet amount is most, at the end of in the unit interval inlet amount it is minimum, and inlet amount and time in the unit interval from start to end
Reduce in direct ratioly.
In addition, in the present invention, the material entered is trichlorosilane.
The present invention has used new reduction furnace to feed ratio, and according to feed time feed way has been carried out excellent
Change so that all compounds can fully be reacted, and silicon rod surface is formed empty burning, moreover it is possible to be overcome because of unnecessary cold thing
Material enters in reduction furnace, destroys the thermal field and gas field of stove inner equilibrium.Because unnecessary cold material, which enters in stove, will take away largely
Heat energy, increase the power consumption of reduction furnace, increase production cost.The life that inventor passes through many experiments and simulation polysilicon rod
Occurrence state, the dosage of the compound required for silicon rod different growth period is obtained, so that in production of polysilicon per ton
Raw material dosage is reduced to 6-10 tons by present 21-25 tons, produces the hydrogen usage of every kilogram of polysilicon from 12-14M3Drop to
6-8M3, so as to save great amount of cost for polysilicon enterprise.
The content of embodiment be for the ease of skilled artisan understands that and using the present invention and describe, and
The restriction to present invention protection content is not formed.Those skilled in the art, can be to this after present disclosure has been read
Invention is suitably changed.The protection content of the present invention is defined by the content of claim.The reality of claim is not being departed from
In the case of matter content and protection domain, various modifications, change and replacement for being carried out to the present invention etc. are all in the protection of the present invention
Within the scope of.
Claims (1)
1. a kind of reduction furnace feeding method in production of polysilicon, it will be divided into the following three stage toward charging in reduction furnace：
(1) the initial charge stage：
The feed time in the stage be from the 0th hour to the 20th hour, wherein, inlet amount is and stage from 0kg to 800kg
Whole fill process in make it that inlet amount is increased over time and increased in direct ratioly in the unit interval；
(2) the steady charging stage：
The feed time in the stage be from the 20th hour to the 60th hour, wherein, inlet amount be from 800kg to 1200kg, and should
Cause that it is constant to increase over time holding for inlet amount in the unit interval in the whole fill process in stage；
(3) the quick feeding stage：
The feed time in the stage be from the 60th hour to the 100th hour, wherein, inlet amount be from 1200kg to 2100kg, and
Cause that inlet amount is increased over time and reduced in direct ratioly in the unit interval in the whole fill process in the stage；
Wherein, the material entered is trichlorosilane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510102981.5A CN106145117B (en) | 2015-03-10 | 2015-03-10 | A kind of reduction furnace feeding method in production of polysilicon |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510102981.5A CN106145117B (en) | 2015-03-10 | 2015-03-10 | A kind of reduction furnace feeding method in production of polysilicon |
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| Publication Number | Publication Date |
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| CN106145117A CN106145117A (en) | 2016-11-23 |
| CN106145117B true CN106145117B (en) | 2018-02-06 |
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| CN201510102981.5A Active CN106145117B (en) | 2015-03-10 | 2015-03-10 | A kind of reduction furnace feeding method in production of polysilicon |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5762491A (en) * | 1995-10-31 | 1998-06-09 | Memc Electronic Materials, Inc. | Solid material delivery system for a furnace |
| CN102040223A (en) * | 2010-12-23 | 2011-05-04 | 江西嘉柏新材料有限公司 | Method for producing trichlorosilane by continuously adding silicon powder |
| CN201850146U (en) * | 2010-11-05 | 2011-06-01 | 乐山永祥硅业有限公司 | Continuous and automatic silicon powder feeding device |
| CN201873534U (en) * | 2010-09-30 | 2011-06-22 | 天津渤天化工有限责任公司 | Titanium tetrachloride mixing and feeding device |
-
2015
- 2015-03-10 CN CN201510102981.5A patent/CN106145117B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5762491A (en) * | 1995-10-31 | 1998-06-09 | Memc Electronic Materials, Inc. | Solid material delivery system for a furnace |
| CN201873534U (en) * | 2010-09-30 | 2011-06-22 | 天津渤天化工有限责任公司 | Titanium tetrachloride mixing and feeding device |
| CN201850146U (en) * | 2010-11-05 | 2011-06-01 | 乐山永祥硅业有限公司 | Continuous and automatic silicon powder feeding device |
| CN102040223A (en) * | 2010-12-23 | 2011-05-04 | 江西嘉柏新材料有限公司 | Method for producing trichlorosilane by continuously adding silicon powder |
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|---|---|
| CN106145117A (en) | 2016-11-23 |
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Denomination of invention: A feeding method for reducing furnace in polycrystalline silicon production Effective date of registration: 20230506 Granted publication date: 20180206 Pledgee: Tieling Branch of Shengjing Bank Co.,Ltd. Pledgor: Li Jinzhong|Zhou Zhengping Registration number: Y2023210000100 |
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Denomination of invention: A feeding method for reduction furnace in polycrystalline silicon production Granted publication date: 20180206 Pledgee: Tieling Branch of Shengjing Bank Co.,Ltd. Pledgor: Li Jinzhong|Zhou Zhengping Registration number: Y2024980017745 |