CN106145024B - Move MEMS (MEMS) packaging part - Google Patents
Move MEMS (MEMS) packaging part Download PDFInfo
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- CN106145024B CN106145024B CN201510783708.3A CN201510783708A CN106145024B CN 106145024 B CN106145024 B CN 106145024B CN 201510783708 A CN201510783708 A CN 201510783708A CN 106145024 B CN106145024 B CN 106145024B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
- B81B3/0005—Anti-stiction coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
- B81B3/001—Structures having a reduced contact area, e.g. with bumps or with a textured surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
- B81C1/0096—For avoiding stiction when the device is in use, i.e. after manufacture has been completed
- B81C1/00984—Methods for avoiding stiction when the device is in use not provided for in groups B81C1/00968 - B81C1/00976
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
- B81B2207/012—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being separate parts in the same package
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0109—Bonding an individual cap on the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/035—Soldering
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/036—Fusion bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
- B81C2203/0785—Transfer and j oin technology, i.e. forming the electronic processing unit and the micromechanical structure on separate substrates and joining the substrates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
- B81C2203/0785—Transfer and j oin technology, i.e. forming the electronic processing unit and the micromechanical structure on separate substrates and joining the substrates
- B81C2203/0792—Forming interconnections between the electronic processing unit and the micromechanical structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
Abstract
MEMS (MEMS) packaging part and related forming method that the present invention relates to a kind of with anti-viscous layer.In some embodiments, MEMS package part includes device substrate and CMOS substrate.Device substrate includes having the MEMS device of moveable or flexible part, which is moveable or flexibly relative to device substrate.The surface of moveable or flexible part is coated with conformal anti-viscous layer made of polysilicon.Present invention provides a kind of methods for manufacturing MEMS package part.The present embodiments relate to movement MEMS (MEMS) packaging parts.
Description
Technical field
The present embodiments relate to movement MEMS (MEMS) packaging parts.
Background technique
MEMS (MEMS) device of such as accelerator, pressure sensor and microphone, which has found, to be widely used in being permitted
In more modern electronic equipments.For example, MEMS accelerator be commonly used for automobile (for example, in air bag system), tablet computer or
In smart phone.
Summary of the invention
According to some embodiments of the present invention, a kind of MEMS (MEMS) packaging part is provided, comprising: device lining
Bottom, including the MEMS device with moveable part or flexible part, the moveable part or flexible part are relative to described
Device substrate is moveable or flexibly；And CMOS substrate, it is bonded to the device substrate；Wherein, the movable part
Divide or the surface of flexible part is coated with conformal anti-viscous layer made of polysilicon.
Other embodiment according to the present invention provides a kind of MEMS (MEMS) packaging part, comprising: CMOS lining
Bottom has upper and lower surfaces；Single crystal silicon device substrate is bonded to the CMOS substrate and including moveable MEMS device
Part or flexible MEMS device；And conformal anti-viscous layer, as the moveable MEMS device or flexible MEMS device
Close to the CMOS substrate upper surface surface liner, wherein the anti-viscous layer made of polysilicon have
From root mean square (RMS) surface roughness in the range of about 10nm to about 30nm.
Other embodiment according to the present invention provides a kind of for manufacturing the side of MEMS (MEMS) device
Method, which comprises form covering substrate, the covering substrate has the groove being located in the front side of the covering substrate；
The covering substrate is bonded to the MEMS device substrate made of monocrystalline silicon, so that the covering substrate and the MEMS device
Substrate jointly seals the groove, and to form cavity；Depositing conformal polysilicon layer is to cover the MEMS device lining
The exposed surface at bottom；And the MEMS device substrate and the conformal polysilicon layer are patterned, to form moveable MEMS
Device or flexible MEMS device.
Detailed description of the invention
When reading in conjunction with the accompanying drawings, each side that the present invention may be better understood according to the following detailed description
Face.It is emphasized that according to the standard practices in industry, various parts are not drawn to scale.In fact, in order to clear
Discussion, the size of various parts can be arbitrarily increased or reduce.
Figure 1A shows the sectional view of some embodiments of MEMS (MEMS) packaging part
Figure 1B shows the perspective view of some embodiments of the amplifier section of the MEMS package part of Figure 1A.
Fig. 1 C shows the perspective view of some embodiments of the MEMS device of the MEMS package part of Figure 1A.
Fig. 2 shows the flow charts of some embodiments of the method for manufacturing MEMS package part.
Fig. 3 to Figure 10 shows a series of sections of some embodiments of the MEMS package part in each fabrication stage
Figure.
Specific embodiment
The present invention provides many different embodiments or examples, for realizing different characteristic of the invention.It is explained below
The particular instance of component and arrangement is to simplify the present invention.Certainly, these are only that example is not intended to limit the present invention.For example,
In being described below, above second component or the upper formation first component may include that the first component and second component directly contact
Embodiment also may include that the additional component being formed between the first component and second component makes the first component and second component
The embodiment being not directly contacted with.In addition, the present invention can in multiple examples repeat reference numerals and/or character.This repetition
Be for purposes of simplicity and clarity, and itself do not indicate each embodiment discussed and/or configuration between pass
System.
In addition, for ease of description, can be used herein such as " in ... lower section ", " ... below ", " lower part ",
" ... above ", the spatial relation terms such as " top ", to describe an element or component and another element or portion as shown in the figure
The relationship of part.In addition to orientation shown in figure, spatial relation term is intended to include the device in use or operating process not
Same orientation.Device can be positioned in other ways and (is rotated by 90 ° or in other orientation), and space used herein
Relationship description symbol can similarly be interpreted accordingly.
Moreover, for ease of description, " first ", " second ", " third " etc. can be used herein, to distinguish attached drawing or a system
Different elements in column attached drawing." first ", " second ", " third " etc. are not intended to describe corresponding element.Therefore, such as to combine
" first element " described for first dielectric layer of the first attached drawing is not necessarily corresponded to combine the first of another attached drawing to be situated between
" first element " described for electric layer.
Due to the moveable part or flexible part of MEMS device, so there is MEMS device cmos circuit not meet
Several production challenges arrived.One significant challenge of MEMS device is that surface is viscous.Surface is viscous to refer to MEMS movable part
Divide or flexible part touches neighbouring surface and " stick " to the tendency on neighbouring surface.It is this " viscous " to occur
The final stage of manufacture so that moveable part or flexible part are not exclusively discharged from neighbouring surface, or can occur
During normal operating when component " stick " to neighbouring surface suddenly.Surface is viscous can be occurred in various MEMS
In device, including actuator, valve, switch, microphone, pressure sensor, accelerator and/or gyroscope or any other use
The MEMS device of moveable part or flexible part.
As part dimension reduces due to technology from one generation to the next, the surface viscous day just become in MEMS device
The important consideration factor of benefit.Several Different Effects (electrostatic force such as between capillary force, molecule Van der Waals force or adjacent surface)
Any one of can to generate surface viscous.These influences cause viscous degree that can become based on many different factors
Change, whether the contact electromotive force between contact area, surface, surface such as between surface temperature, surface are hydrophilic or hydrophobic
Etc..Many methods are used to attempt that limiting surface is viscous, however, each method of front has various disadvantages, such as: example
Such as keep implementation cost slightly higher due to needing photomask, or is difficult to be integrated with various manufacturing process.
Therefore, the present invention is directed to the MEMS package part with improved viscosity property, and forms this MEMS package part
Correlation technique.MEMS package part includes the MEMS device with moveable part or flexible part.The movable part of MEMS device
Point or the surface of flexible part be coated with anti-viscous layer made of polysilicon, anti-viscous layer, which has, to be made of a series of peak and valley
The surface texture of relative coarseness.These peak and valley by whole contact area be limited to polysilicon peak and relative smooth it is neighbouring
The point that surface is in contact, so that these peak and valley help to limit viscous problem.Therefore, can the last of manufacturing process and/
Or it is avoided during MEMS device normal operating viscous；And correspondingly improve the reliability of MEMS device.Some examples will be directed to
Property MEMS device idea of the invention is shown, it should be appreciated that, this concept be suitable for using moveable part (for example,
Including actuator, valve, switch, microphone, pressure sensor, accelerator and/or gyroscope) any MEMS device.
Figure 1A shows the sectional view of MEMS package part 100 in accordance with some embodiments.MEMS packaging part 100 includes connecing
The CMOS substrate 106 and device substrate 104 being combined.Device substrate 104 includes having fixed part 110 and movable part
Divide 108 MEMS device.In this example, moveable part corresponds to mass block 108.In some embodiments, pass through one
Mass block 108 is connected to fixed part 110 and mass block 108 at least by a or multiple cantilever beams or spring (to show)
A part can move at least one direction relative to fixed part 110.Although the major part of device substrate 104 can be with
It is made of bulk semiconductor material 502 (such as single crystal silicon material), but the bottom surface 128s of device substrate 104 is coated with by polycrystalline
Anti- viscous layer 127 made of silicon.
More details are as shown in Figure 1B, anti-viscous layer 127 be made of polysilicon and be arranged in bulk semiconductor (for example,
Monocrystalline silicon) substrate 502 bottom surface 128s on.The small-scale lattice structure of polysilicon introduces rough surface 118s, the coarse table
Face 118s has a series of peak (for example, 131) and paddy (for example, 133), this reduce mass block 108 and CMOS substrate 106 it
Between contact area.It therefore reduces viscous force between mass block 108 and CMOS substrate 106 and reducing mass block 108
Lower surface and CMOS substrate 106 upper surface 120s between it is viscous a possibility that.In some embodiments, anti-viscous layer
Root mean square (RMS) surface roughness of 127 rough surface 118s is in the range of from about 10nm to about 30nm.Pass through measurement
The root mean square of the microcosmic peak and valley on surface calculates rms surface roughness, and formula is such as provided below:
Wherein, RqIt is the rms surface roughness of anti-viscous layer 127, yiBe from average surface 132 into n data point
The vertical range of each data point, data point can separate on average surface 132 every a certain distance.From rough wheel
Exterior feature calculates average surface 132.In some embodiments, two neighbouring surfaces of anti-viscous layer 127 and following CMOS substrate 106
The distance between 118s and 120s (ds, Figure 1B) less than 100 μm, thus it is viscous may be can influence MEMS package part yield and
The considerations of performance factor.In some embodiments, anti-viscous layer 127 is the conformal liner being arranged along bottom surface 128s, this is conformal
The thickness of liner is from aboutTo aboutIn the range of.Anti- viscous layer can be deposited by chemical vapor deposition process
127, the chemical vapor deposition of chemical vapor deposition process such as low-pressure chemical vapor deposition (LPCVD), plasma enhancing
(PECVD) or atmospheric pressure chemical vapor deposition (APCVD) growth technique.
In the embodiment of Figure 1A, CMOS substrate 106 includes: the IC device lining with active component (for example, transistor)
Bottom 112；With interconnection layer 114, interconnection layer 114 has the metal layer being arranged in interlayer metal dielectric (IMD) material and through-hole mutual
Even part.CMOS substrate 106 can have flat upper surface 120s and lower surface 142s.In some embodiments, flat upper
Surface 120s is the top surface of IMD material, and in other embodiments, the IMD material of interconnection layer 114 is arranged in additional dielectric layer
Material top.In some embodiments, the first metal layer 130 can be set in the lower section of the plane of upper surface 120s.It is seen from above
One metal layer can have the surface of annular, and second metal layer 129 can with eutectic be joined to the first metal layer 130, with
Device substrate 104 is adhered to CMOS substrate 106.Because the first metal layer 130 and second metal layer 129 can have annular
Configuration, so the first metal layer 130 and second metal layer 129 can laterally surround a cavity 111, the upper surface of the cavity with
Mass block 108 is boundary and is below boundary with CMOS substrate 106.As example, the first metal layer 130 is set as in alignment with CMOS
In topmost metallized plane in substrate 106, and it is made including aluminium and second metal layer 129 of germanium, these layers 129,
130 be hermetically sealed cavity 111 with ambient environment.For the ease of manufacture, anti-viscous layer 127 is usually in bulk substrate
Continuously extend above 502 lowermost surface 128s.Therefore, in an illustrated embodiment, anti-viscous layer 127 is in the second metal
Extend between layer 129 and bulk semiconductor substrate 502.
In some embodiments, MEMS package part 100 further includes the covering for being joined to the upper surface 126s of device substrate 104
Substrate 102.Cavity 116 is jointly sealed in 108 top of mass block by covering substrate 102 and device substrate 104.In some realities
Apply in example, cavity 116 and cavity 111 be in fluid communication (fluid communication) and with surround MEMS package part 100
Ambient enviroment be hermetically sealed.However, in other embodiments, cavity 111 and 116 passes through mass block 108, flexible
MEMS film and/or another MEMS structure are isolated from each other；And the cavity 111 and 116 can have identical or different pressure.?
In some embodiments, for example, dielectric layer 402 is the positive 124s being located at melting joint interface position that covering substrate is arranged in
The silicon dioxide layer of top.Dielectric layer 402 can be the conformal liner along positive 124s and the setting of cavity 116, and promote
The covering melting of substrate 102 is joined to device substrate 104.In some embodiments, it CMOS substrate 106, device substrate 104 or covers
Cover lining bottom 102 may include bulk semiconductor substrate, for example, bulk semiconductor substrate includes one of following material or more
Kind: silicon, germanium, silicon carbide, group-III element and V group element.In other embodiments, for example, CMOS substrate 106, device substrate
One or more of 104 or covering substrate 102 are semiconductor-on-insulator (SOI) substrate, such as silicon-on-insulator or insulation
Body polysilicon (POI) substrate.
During the operation of the MEMS package part 100 of Figure 1A, mass block 108 can be mobile relative to CMOS substrate 106,
The power experienced of mass block 108 and the power experienced of MEMS package part 100 are onesize.For example, in figure 1A, if MEMS is sealed
Piece installing 100 moves up suddenly, then mass block 108 will tend to remain stationary, so that mass block 108 and CMOS substrate 106 exist
Acceleration period closely presses together.The temporary variation of the spacing due to caused by acceleration accordingly provides matter
The temporary variation of capacitor between gauge block 108 and CMOS substrate 106.It can monitor between CMOS substrate 106 and mass block 108
Capacitor, it is then possible to calculate MEMS device acceleration experienced based on this monitored capacitor.
Fig. 1 C shows the perspective view of another MEMS device 150 in accordance with some embodiments.MEMS device 150 can be with
It is accelerometer between them with cross one another multiple first finger 110a and multiple second finger 108a.It is more
A first finger 110a is fixed to device substrate 104, and is configured as the fixation electrode of capacitor.Multiple second finger-like
Part 108a is connected to device substrate 104 by one or more cantilever beams or spring (not shown) and refers to relative to multiple first
Shape part 110a laterally moves (see arrow 152), and is configured as another travelling electrode of capacitor.By polysilicon system
At anti-viscous layer 127a the bottom surface of device substrate 104 is set, there is coarse exposed surface to prevent or limit multiple the
The upper surface of two finger 108a and following substrate 106a is viscous.Compared with the embodiment of Figure 1A, in figure 1A, by mass block
108 are described as moving up and down with the acceleration experienced of measurement device 100, the mass block of the accelerometer in Fig. 1 C
108a can be with transverse shifting (see arrow 152), so that the spacing of neighbouring mass block and fixed partial sidewall 108s, 110s
From change in response to acceleration.Therefore, it is limited on the moving direction vertical with anti-stick stagnant surface 127 for by viscous
Example describes the anti-stick stagnant surface 127 of Figure 1A, and in contrast, Fig. 1 C shows example, wherein anti-stick stagnant surface 127a will glue
It is stagnant to be limited on the moving direction for being typically parallel to anti-stick stagnant surface 127a.
Therefore, from above-described embodiment as can be seen that the anti-viscous layer of polysilicon can advantageously reduce gluing in MEMS structure
It is stagnant.Viscous layer anti-for polysilicon and existing accurate surface roughness can change according to used growth technique,
But typically exhibit the coarse surface with peak and valley.These peak and valley are usually irregular, the whole length on surface
Or on region, the depth and width of paddy are different, and/or in the whole length on surface or region, and the height and width at peak are not yet
Together.However, in other embodiments, it is also possible to have peak and/or the paddy for having well-regulated depth and/or width.In addition to advantageously
Limit it is viscous other than, polysilicon is integrated to it is relatively easy in modern semiconductors manufacturing process, and for most of techniques come
Say that polysilicon is easy fabricated in situ and material benefit.In addition, polysilicon is compatible with other MEMS material (for example, bulk silicons), so
It is possible that limitation forms used patterned quantity after anti-viscous layer.Therefore, the use of the anti-viscous layer of polysilicon is being permitted
Various aspects are all beneficial.
With reference to Fig. 2, it includes the moveable or flexible MEMS coated with anti-viscous layer that flow chart, which is provided for manufacturing,
Some embodiments of the method for the MEMS package part of device.For example, anti-viscous layer includes the polysilicon with rough surface, such as
Previously with respect to shown or described by MEMS package part shown in Figure 1A and Fig. 1 C.
Although disclosed method (for example, method 200) is hereafter depicted and described as sequence of operations or event, answer
The shown sequence of the understanding, these operations or event is not to be construed to the meaning of limitation.For example, some operations can be with not
With sequence occur and/or with other than those illustrated herein and/or described operations or event other operations or
Event occurs simultaneously.Furthermore it is possible to which all operations shown is not required to be all used to implement one or more side described herein
Face or embodiment.Furthermore, it is possible to carry out one described herein or more in one or more individually operation and/or stages
A operation.
In operation 202, covering substrate is provided.Groove is formed in the front side of covering substrate, so that inner sidewall is served as a contrast from covering
The recessed surface at bottom extends to the forefront surface of covering substrate.
In operation 204, the first side that MEMS device substrate is bonded on front side of substrate will be covered.MEMS device substrate
With covering substrate contact, therefore their common sealed grooves, to define MEMS device substrate and cover the chamber between substrate
Body.
In operation 206, the first etching is executed the second of MEMS device substrate to second side of MEMS device substrate
The part of protrusion is formed on side.
In operation 208, conformal polysilicon layer is formed in second side of MEMS device substrate.
In operation 210, landing pad is formed in second side of MEMS device substrate.In some embodiments, seam welding
Disc portion covers polysilicon layer.
In operation 212, MEMS device substrate is patterned to form MEMS device.For example, release etch can be used for from
Moveable part in the peripheral region release MEMS device of MEMS device substrate.
In operation 214, second side of MEMS device substrate is bonded to CMOS substrate.
Fig. 3 to Figure 10 shows a series of sections of the formation of common description MEMS package part in accordance with some embodiments
Figure.Although describing Fig. 3 to Figure 10 about method 200, it should be appreciated that, structure disclosed in Fig. 3 to Figure 10 is not limited to
Method 200, and can be the structure of the individualism independently of method 200.Similarly, although being described about Fig. 3 to Figure 10
Method 200, it should be appreciated that, method 200 is not limited to structure disclosed in Fig. 3 to Figure 10, and can be independently of Fig. 3 to figure
Structure disclosed in 10 and individualism.
Fig. 3 shows the sectional view in accordance with some embodiments for corresponding to operation 202.As shown in figure 3, providing has front
The covering substrate 102 of 124s and back side 122s.For example, covering substrate 102 can be prepared by bulk semiconductor wafer 302, it is blocky
Semiconductor crystal wafer 302 includes monocrystalline silicon wafer crystal or monocrystalline silicon wafer, or is prepared by other substrates, for example, other substrates by germanium,
Silicon carbide, group-III element and/or V group element are made.It in some embodiments, can be in the front side of covering substrate 102 from front
124s forms groove.Can at position corresponding with the moveable or flexible part of MEMS device by groove etching to suitable
When depth.Although being not shown in Fig. 3, other Patternized techniques can be used to prepare covering substrate.For example, can be
The step for formed TSV opening, with covering substrate 102 back side prepare contact to be electrically connected MEMS device.
As shown in figure 4, then, the covering preparation of substrate 102 is used for joint technology.In some embodiments, melting engagement
Layer 402 can be formed in above the positive 124s of covering substrate 102.Melt bonding layer 402 can along positive 124s and
It is extended continuously above the exposed surface of groove.In some optional embodiments, melting bonding layer is formed before patterned groove
402, therefore, melting bonding layer 402 only cover front 124s reservation part and it is not formed on the surface of the recesses.One
In a little embodiments, metal pad or becket operation can be formed on the positive 124s of covering substrate 102 and as eutectic
Landing pad.
Fig. 5 shows the sectional view in accordance with some embodiments for corresponding to operation 204.As shown in figure 5, MEMS device serves as a contrast
Bottom 104 includes first side with upper surface 126s and second side with bottom surface 128s.The positive side of covering substrate 102 is bonded to
First side of MEMS device substrate 104 so that MEMS device substrate 104 and covering substrate 102 jointly sealed groove to be formed
Cavity 116.It in some embodiments, should for example, MEMS device substrate 104 can be prepared by bulk semiconductor wafer 502
Bulk semiconductor wafer includes the one or more of following material: silicon, germanium, silicon carbide, III race element and V group element.One
In a little embodiments, using melting engagement MEMS device substrate 104 (for example, it may include silicon) is bonded to melting engagement
Layer 402 is (for example, it may include SiO2).In some embodiments, after melting engagement, MEMS device substrate 104 is thinned
And/or covering substrate 102, to reduce its thickness.
Fig. 6 shows the sectional view in accordance with some embodiments for corresponding to operation 206.As shown in fig. 6, being served as a contrast in MEMS device
The first etching is executed in the second side at bottom 104, to form protrusion part 602 in second side of MEMS device substrate 104.Value
It obtains it is noted that in addition to other factors, in view of for movement and/or by the moveable part of the MEMS device of formation or flexibly
In the case of suitable viscous force between part and neighbouring component provides enough spaces, being formed has height applicatory
Protrusion part 602.
Fig. 7 shows the sectional view in accordance with some embodiments for corresponding to operation 208.As shown in fig. 7, along bottom surface 128s
Polysilicon layer 702 is formed at second side of MEMS device substrate.In some embodiments, pass through chemical vapor deposition process shape
At polysilicon layer 702, such as the chemical vapor deposition (PECVD) of low-pressure chemical vapor deposition (LPCVD), plasma enhancing or
Atmospheric pressure chemical vapor deposition (APCVD) growth technique.As unrestricted example, can by using silane as reactant,
Less than 1torr pressure and about 600 DEG C at a temperature of, in LPCVD system formation polysilicon layer 702.In some embodiments
In, the rms surface roughness that anti-viscous layer 127 is formed to have in the range of from about 10nm to 30nm (can be passed through into survey
The root mean square of the microcosmic peak and valley on the surface of amount calculates rms surface roughness).In some embodiments, by anti-viscous layer 127
Be formed as the conformal liner being arranged along bottom surface 128s, the thickness of the anti-viscous layer is from aboutTo aboutRange
It is interior.In some embodiments, it can use and mixed by the way that hydrogen phosphide, arsenic hydride or diborane are added to the applicatory of reactant
It is miscellaneous to form polysilicon layer 702.
Fig. 8 shows the sectional view in accordance with some embodiments for corresponding to operation 210.As shown in figure 8, MEMS device is served as a contrast
Bottom 104 prepares to be used for subsequent joint technology.In some embodiments, it is configured for use as the formation of metal layer 129 of landing pad
Above polysilicon layer 702.Metal layer 129 may include metal, such as aluminium (AL), germanium (Ge), gold (Au), copper (Cu), tin
(Sn) or alloy.Metal layer 129 can be formed by following steps: the engagement material of deposition covering polysilicon layer 702 first
Expect (for example, germanium), patterns grafting material then with the joint place at the periphery of MEMS device and form such as rectangle
Isolated landing pad or engagement ring.
Fig. 9 shows the sectional view in accordance with some embodiments for corresponding to operation 212.As shown in figure 9, patterning MEMS device
Part substrate 104 is to form MEMS device.For example, MEMS device is or including such as mini drive or microsensor, it is all
Such as micro valve, microswitch, microphone, pressure sensor, accelerator, gyroscope have relative to the shifting of fixed part 110
Any other device of dynamic or curved moveable part or flexible part.
Figure 10 shows the sectional view in accordance with some embodiments for corresponding to operation 214.As shown in Figure 10, by MEMS device
Substrate 104 is bonded to CMOS substrate 106.The upper surface 120s of CMOS substrate 106 is towards polysilicon layer 702.In some embodiments
In, before splicing, CMOS substrate 106 has been prepared by one or more manufacturing process.For example, CMOS substrate 106 wraps
Include one or more active components.A series of metallized planes and through-hole interconnection part are arranged in IMD layer, and IMD layers are formed in IC
Above the upper surface of device substrate 112.In some embodiments, extremely by the semiconductor between semiconductor material and metal material
The engagement of MEMS device substrate 104 is arrived CMOS substrate 106 by metal bonding.In some embodiments, semiconductor material includes following
At least one of material: Ge, Si, SiGe or other semiconductor materials.In some embodiments, metal material includes following material
At least one of material: Al, Cu, Ti, Ta, Au, Ni, Sn or other metals.In some embodiments, pass through two kinds of metal materials
Between eutectic bonding so that MEMS device substrate 104 is bonded to CMOS substrate 106, every kind of metal material all includes in following material
At least one: Al, Cu, Ti, Ta, Au, Ni, Sn or other metals.In annealing process each other by the material engaged
It squeezes with the eutectic phase of forming material.For example, forming Ge in the case where annealing temperature is in the range of from 400 DEG C to 500 DEG C
Eutectic bonding between Al.
After MEMS device substrate 104 is bonded to CMOS substrate 106, when the engagement of usually wafer scale bonded substrate 104,
106 when being divided into individual chip after splicing, forms MEMS package part.Therefore, from the foregoing it will be appreciated that this hair
It is bright to be related to MEMS package part and correlation technique.MEMS package part includes moveable or flexible MEMS device, such as miniature drive
Dynamic device or microsensor.Anti- viscous layer made of polysilicon has coarse surface, and anti-viscous layer is arranged in MEMS device
Surface.It is viscous between the moveable part or flexible part and another surface of MEMS device to reduce to configure anti-viscous layer
Power.
In some embodiments, the present invention provides a kind of MEMS package part.The MEMS package part includes device substrate, device
Substrate includes that the MEMS device with moveable part or flexible part, the moveable part or flexible part are served as a contrast relative to device
Bottom is moveable or flexibly.MEMS package part further includes the CMOS substrate for being bonded to device substrate.Moveable part or spirit
The surface of part living is coated with conformal anti-viscous layer made of polysilicon.
In other embodiments, the present invention provides a kind of MEMS package part.The MEMS package part include have upper surface and
The CMOS substrate of lower surface.The MEMS package part further includes being bonded to the single crystal silicon device substrate of CMOS substrate and including leaning on
The moveable MEMS device or flexible MEMS device coated with conformal anti-viscous layer on nearly CMOS substrate surface.By polysilicon
Manufactured anti-viscous layer has rms surface roughness in the range of from about 10nm to about 30nm.MEMS packaging part further includes
It is bonded to the covering substrate of the upper surface of device substrate, so that sealing is close above moveable or flexible MEMS device
Seal cavity.
In another other embodiments, the present invention provides a kind of method for manufacturing MEMS package part.This method comprises:
It is formed in the front side of covering substrate and has reeded covering substrate.This method further includes that will cover substrate to be bonded to by monocrystalline silicon system
At MEMS device substrate with sealed groove, and to forming cavity.This method further includes depositing conformal polysilicon layer to cover
The exposed surface of lid MEMS device substrate.This method further includes patterning MEMS device substrate and conformal polysilicon layer, to be formed
Moveable or flexible MEMS device.
According to some embodiments of the present invention, a kind of MEMS (MEMS) packaging part is provided, comprising: device lining
Bottom, including the MEMS device with moveable part or flexible part, the moveable part or flexible part are relative to described
Device substrate is moveable or flexibly；And CMOS substrate, it is bonded to the device substrate；Wherein, the movable part
Divide or the surface of flexible part is coated with conformal anti-viscous layer made of polysilicon.
In above-mentioned MEMS package part, the moveable part or flexible part are made of monocrystalline silicon.
In above-mentioned MEMS package part, the thickness of the conformal anti-viscous layer is from aboutTo aboutIn the range of
And root mean square (RMS) surface roughness is in the range of from about 10nm to about 30nm.
In above-mentioned MEMS package part, the CMOS substrate is bonded to by the device by Al-Ge eutectic bonding pad
Substrate, and wherein, the conformal anti-viscous layer is arranged between the device substrate and the Al-Ge eutectic bonding pad.
It further include the covering substrate with lower surface in above-mentioned MEMS package part, the adjacent device in the lower surface
The upper surface of substrate so that the covering substrate and the device substrate be collectively form positioned at the moveable part or
Cavity above flexible part.
In above-mentioned MEMS package part, the covering substrate is bonded to the device substrate by melting engagement.
In above-mentioned MEMS package part, the conformal anti-viscous layer covers the bottom surface of the device substrate, the device lining
The bottom surface at bottom is close to the CMOS substrate.
In above-mentioned MEMS package part, the device substrate, which has, is bonded to the CMOS substrate positioned at the device substrate
Position at protrusion part and be wherein continuously provided along the surface of the exposure of the protrusion part described conformal anti-
Viscous layer.
In above-mentioned MEMS package part, the MEMS device includes accelerometer, and the accelerometer has by multiple removable
Multiple fixation fingers of finger separation, wherein the bottom surface of the removable finger is covered by the conformal anti-viscous layer,
With the viscous of limitation to the upper surface of the following CMOS substrate.
Other embodiment according to the present invention provides a kind of MEMS (MEMS) packaging part, comprising: CMOS lining
Bottom has upper and lower surfaces；Single crystal silicon device substrate is bonded to the CMOS substrate and including moveable MEMS device
Part or flexible MEMS device；And conformal anti-viscous layer, as the moveable MEMS device or flexible MEMS device
Close to the CMOS substrate upper surface surface liner, wherein the anti-viscous layer made of polysilicon have
From root mean square (RMS) surface roughness in the range of about 10nm to about 30nm.
In above-mentioned MEMS package part, further includes: covering substrate is bonded to the upper surface of the device substrate, to make
It obtains the covering substrate and device substrate is collectively form in the moveable MEMS device or flexible MEMS device
The seal cavity of side.
In above-mentioned MEMS package part, the thickness of the conformal anti-viscous layer is from aboutTo aboutRange
It is interior.
In above-mentioned MEMS package part, in being applied on the bottom surface of the upper surface of the CMOS substrate for the device substrate
Cover the conformal anti-viscous layer.
In above-mentioned MEMS package part, by eutectic bonding pad by the moveable MEMS device or flexibly
MEMS device is electrically connected to the IC device being set on the CMOS substrate.
In above-mentioned MEMS package part, a part of the conformal anti-viscous layer is arranged in germanium landing pad and the device
Between substrate.
In above-mentioned MEMS package part, the device substrate has the protrusion at the position of the eutectic bonding pad
Part, and the conformal anti-viscous layer is continuously provided along the surface of the protrusion part.
Other embodiment according to the present invention provides a kind of for manufacturing the side of MEMS (MEMS) device
Method, which comprises form covering substrate, the covering substrate has the groove being located in the front side of the covering substrate；
The covering substrate is bonded to the MEMS device substrate made of monocrystalline silicon, so that the covering substrate and the MEMS device
Substrate jointly seals the groove, and to form cavity；Depositing conformal polysilicon layer is to cover the MEMS device lining
The exposed surface at bottom；And the MEMS device substrate and the conformal polysilicon layer are patterned, to form moveable MEMS
Device or flexible MEMS device.
In the above-mentioned methods, further includes: formed at the MEMS device substrate and pattern germanium landing pad；And
The CMOS substrate is bonded to the MEMS device substrate at the germanium landing pad；Wherein, the moveable MEMS
Device or flexible MEMS device are electrically connected to the IC device being set on the CMOS substrate.
In the above-mentioned methods, further includes: before depositing the conformal polysilicon layer, the MEMS device substrate is held
Row etching is to form protrusion part.
In the above-mentioned methods, further includes: before the covering substrate is bonded to the MEMS device substrate, along institute
The exposed front surface for stating covering substrate forms conformal melting bonding layer.
The feature of several embodiments outlined above, so that the present invention may be better understood in those of ordinary skill in the art
Various aspects.It will be understood by those skilled in the art that they can easily set using based on the present invention
Meter or modification are for executing purpose identical with embodiment defined herein and/or realizing other techniques and knot of same advantage
Structure.Those of ordinary skill in the art should also be appreciated that this equivalent constructions without departing from the spirit and scope of the present invention, and
Without departing from the spirit and scope of the present invention, a variety of variations can be carried out, replaced and changed.
Claims (16)
1. a kind of MEMS (MEMS) packaging part, comprising:
Device substrate, including the mems device with moveable part or flexible part, the moveable part or spirit
Part living is moveable or flexibly relative to the device substrate；And
CMOS substrate is bonded to the device substrate；
Wherein, the surface of the moveable part or flexible part is coated with conformal anti-viscous layer made of polysilicon, wherein
The conformal anti-viscous layer has a series of surface texture for the relative coarseness being made of peak and valley, wherein passes through Al-Ge eutectic
The CMOS substrate is bonded to the device substrate by landing pad, and wherein, and the conformal anti-viscous layer is arranged described
Between device substrate and the Al-Ge eutectic bonding pad.
2. packaging for micro electro-mechanical systems according to claim 1, wherein the moveable part or flexible part are by list
Made of crystal silicon.
3. packaging for micro electro-mechanical systems according to claim 1, wherein the thickness of the conformal anti-viscous layer from
ExtremelyIn the range of and root mean square (RMS) surface roughness in the range of from 10nm to 30nm.
4. packaging for micro electro-mechanical systems according to claim 1 further includes the covering substrate with lower surface, the following table
The upper surface of the adjacent device substrate in face, so that the covering substrate and the device substrate are collectively form positioned at institute
State the cavity above moveable part or flexible part.
5. packaging for micro electro-mechanical systems according to claim 4, wherein the covering substrate is bonded to institute by melting engagement
State device substrate.
6. packaging for micro electro-mechanical systems according to claim 1, wherein the conformal anti-viscous layer covers the device lining
The bottom surface at bottom, the bottom surface of the device substrate is close to the CMOS substrate.
7. packaging for micro electro-mechanical systems according to claim 1, wherein the device substrate, which has, is located at device lining
Bottom is bonded to the protrusion part at the position of the CMOS substrate, and wherein, along the surface of the exposure of the protrusion part
It is continuously provided the conformal anti-viscous layer.
8. packaging for micro electro-mechanical systems according to claim 1, wherein the mems device includes accelerometer,
The accelerometer has the multiple fixation fingers separated by multiple removable fingers, wherein the removable finger
Bottom surface is covered by the conformal anti-viscous layer, with limit for the following CMOS substrate upper surface it is viscous.
9. a kind of MEMS (MEMS) packaging part, comprising:
CMOS substrate has upper and lower surfaces；
Single crystal silicon device substrate is bonded to the CMOS substrate and including moveable mems device or flexible micro-
Mechatronic Systems device；And
Conformal anti-viscous layer, the close institute as the moveable mems device or flexible mems device
State the liner on the surface of the upper surface of CMOS substrate, wherein the anti-viscous layer made of polysilicon have from 10nm to
Root mean square (RMS) surface roughness in the range of 30nm, and the conformal anti-viscous layer has by a series of peak and valley structures
At relative coarseness surface texture,
Wherein, by eutectic bonding pad that the moveable mems device or flexible mems device is electric
Be connected to the IC device being set on the CMOS substrate, a part setting of the conformal anti-viscous layer in germanium landing pad and
Between the device substrate.
10. packaging for micro electro-mechanical systems according to claim 9, further includes:
Substrate is covered, the upper surface of the device substrate is bonded to, so that the covering substrate and device substrate are jointly
Form the seal cavity being located above the moveable mems device or flexible mems device.
11. packaging for micro electro-mechanical systems according to claim 9, wherein the thickness of the conformal anti-viscous layer fromIt arrivesIn the range of.
12. packaging for micro electro-mechanical systems according to claim 9, wherein in the device substrate close to the CMOS
The conformal anti-viscous layer is coated on the bottom surface of the upper surface of substrate.
13. packaging for micro electro-mechanical systems according to claim 9, wherein the device substrate, which has, is located at the eutectic
Protrusion part at the position of landing pad, and along it is described protrusion part surface be continuously provided it is described conformal anti-stick stagnant
Layer.
14. method of the one kind for manufacturing MEMS (MEMS) device, which comprises
Covering substrate is formed, the covering substrate has the groove being located in the front side of the covering substrate；
The covering substrate is bonded to the mems device substrate made of monocrystalline silicon, so that the covering substrate and institute
It states mems device substrate and jointly seals the groove, and to form cavity；
Depositing conformal polysilicon layer is to cover the exposed surface of the mems device substrate, wherein the conformal polycrystalline
Silicon layer has a series of surface texture for the relative coarseness being made of peak and valley；
The mems device substrate and the conformal polysilicon layer are patterned, to form moveable MEMS device
Part or flexible mems device；
It is formed at the mems device substrate and patterns germanium landing pad；And
CMOS substrate is bonded to the mems device substrate at the germanium landing pad；
Wherein, the moveable mems device or flexible mems device be electrically connected to be set to it is described
IC device on CMOS substrate, and conformal polysilicon layer setting connects in the mems device substrate and the germanium
It closes between pad.
15. according to the method for claim 14, further includes:
Before depositing the conformal polysilicon layer, etching is executed to form protrusion to the mems device substrate
Point.
16. according to the method for claim 14, further includes:
Before the covering substrate is bonded to the mems device substrate, just along the exposure for covering substrate
Face forms conformal melting bonding layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/713,243 US9527721B2 (en) | 2015-05-15 | 2015-05-15 | Movement microelectromechanical systems (MEMS) package |
| US14/713,243 | 2015-05-15 |
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