CN106145023A - A kind of micro radio circle fluxgate sensor and preparation method thereof - Google Patents
A kind of micro radio circle fluxgate sensor and preparation method thereof Download PDFInfo
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- CN106145023A CN106145023A CN201510306387.8A CN201510306387A CN106145023A CN 106145023 A CN106145023 A CN 106145023A CN 201510306387 A CN201510306387 A CN 201510306387A CN 106145023 A CN106145023 A CN 106145023A
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Abstract
The present invention provides a kind of micro radio circle fluxgate sensor and preparation method thereof, and described sensor includes NiFe line, NiFe line lead pad, Cu wire and Cu conductor leading pad；Described NiFe line is made up of upper strata NiFe line and lower floor NiFe line two parts；Described NiFe line lead pad includes upper strata NiFe line lead pad and lower floor NiFe line lead pad；Upper strata NiFe line is positioned at above Cu wire；Lower floor's NiFe line is positioned at below Cu wire；Upper strata NiFe line and lower floor's NiFe line are different arragement directions；Upper strata NiFe line is alternately connected at head and the tail successively with lower floor NiFe line；Upper strata NiFe line is drawn by upper strata NiFe line lead pad；Lower floor's NiFe line is drawn by lower floor NiFe line lead pad；Cu wire is enclosed in centre by upper strata NiFe line and lower floor's NiFe line, and Cu wire is drawn by the Cu conductor leading pad at two ends.
Description
Technical field
The present invention relates to microsensor field, particularly relate to a kind of micro radio circle fluxgate sensor and system thereof
Preparation Method.
Background technology
Fluxgate sensor is that a kind of Vector Magnetic Field with very excellent comprehensive performance measures device.Coil magnetic
Open gate uses the line-cored structure electroplating magnetosphere on Cu wire, does not has excitation coil and induction coil.Coil magnetic
Open gate is spiral anisotropy principle based on ferromagnetism fluxgate iron core, how to make the iron core of plating have spiral
Anisotropy is the key that can line-cored structure coil fluxgate work.
Document 1 " Fluxgate effect in twisted magnetic wire.Journal of Magnetism and
Magnetic Materials, 2008,320:e974e978 " disclose a kind of stress induct spiral anisotropy without
Coil flux door.Bimetallic conductor to plating, nexine is copper conductor, logical exciting current；Outer layer is electroplated Ni Fe
Layer.Mechanical twisting device reversely rotates produced moment of torsion and is applied on bimetallic conductor, makes layer of NiFe because of machinery
Reverse and produce spiral anisotropy.Document 2 " Magnetic Microwires With Field-Induced Helical
Anisotropy for Coil-Less Fluxgate.IEEE Transactions on Magnetic, 2010,43 (7):
2562-2565 " disclose a kind of magnetic field and induct spiral anisotropy coil fluxgate.During plating,
The circumferential magnetic field that the major axis magnetic field utilizing helmholtz coil to produce and the DC current flowing through Cu wire produce
Superposition produces helical field, makes plating layer of NiFe produce spiral anisotropy.
But, document 1 is applied to a moment of torsion not constant of layer of NiFe, because the change of temperature in layer of NiFe
Change can change by the structure in layer of NiFe produced by moment of torsion, thus causes the change of sensitivity and output voltage,
The output stability of coil fluxgate is affected big by i.e. this kind method.And NiFe in document 1 and document 2
The helical layer anisotropy anglec of rotation is wayward and adjusts.
Summary of the invention
In order to overcome prior art the spiral anisotropy anglec of rotation to be controlled and the problem of the deficiency adjusted.
The technical solution of the present invention is as follows:
According to the first aspect of the invention, the present invention provides a kind of micro radio circle fluxgate sensor, including
NiFe line, NiFe line lead pad, Cu wire 15 and Cu conductor leading pad 16；Described NiFe line by
Upper strata NiFe line 12 and lower floor's NiFe line 13 two parts are constituted；Described NiFe line lead pad includes upper strata
NiFe line lead pad 121 and lower floor NiFe line lead pad 131；Upper strata NiFe line 12 and lower floor NiFe
Line 13 lays respectively at the above and below of Cu wire 15；Upper strata NiFe line 12 and lower floor's NiFe line 13 are
Different arragement directions；Upper strata NiFe line 12 is alternately connected at head and the tail successively with lower floor NiFe line 13；On
Layer NiFe line 12 is drawn by upper strata NiFe line lead pad 121；Lower floor's NiFe line 13 is by lower floor's NiFe line
Lead pad 131 is drawn；Cu wire 15 is enclosed in centre by upper strata NiFe line 12 and lower floor's NiFe line 13,
Cu wire 15 is drawn by the Cu conductor leading pad 16 at two ends.
Preferably, between NiFe line (i.e. upper strata NiFe line 12 and lower floor's NiFe line 13) and Cu wire 15
There is no insulating barrier and protective layer.
There is no insulating barrier and protective layer between NiFe line and Cu wire 15, the signal performance of sensor can be made
Higher.
Preferably, upper strata NiFe line 12 is counterclockwise to rotate；Lower floor's NiFe line 13 is clockwise
Rotating, they have the identical anglec of rotation.
Advantage of this is that the upper and lower NiFe line is inducted spiral anisotropy by shape, in layer of NiFe
Structure temperature influence is little.
It is further preferred that upper strata NiFe line is 15 °, 30 °, 45 ° or 60 ° along rotated counterclockwise by angle
Four kinds of modes；Lower floor's NiFe line rotates clockwise angle for-15 ° ,-30 ° ,-45 ° or-60 ° of four kinds of sides
Formula.
It is further preferred that micro radio circle fluxgate sensor is positioned on substrate 11, substrate 11 is with SiO2
The Si substrate of insulating barrier.
Advantage of this is that Si substrate provides for total to support, the SiO2 insulating barrier on Si substrate is used for
Insulation.
According to the second aspect of the invention, the present invention provides a kind of micro radio circle fluxgate sensor preparation side
Method, comprises the following steps:
SiO2 insulating barrier 21 is grown on step 1:Si substrate 20；
Step 2: growth Cu Seed Layer 22；
Step 3: preparation lower floor layer of NiFe 23；
Step 4: preparation Cu layer 24；
Step 5: preparation upper strata layer of NiFe 25；
Step 6: remove Cu plating seed layer 22；
Step 7: spin-on polyimide protective layer.
Preferably, described step 1 grows SiO2 insulating barrier 21 specifically by thermal oxide at Si substrate 20,
SiO2 insulating barrier 21 thickness grown is preferably 250nm.
Preferably, described step 2 is specially and uses magnetron sputtering sputtering to generate Cu Seed Layer 22, preferably
The thickness of Cu Seed Layer 22 is 200nm.
Preferably, described step 3 specially utilizes electroplating technology, passes through ultraviolet in conjunction with lower floor's NiFe mask plate
Photoetching process prepares lower floor's layer of NiFe 23.
Preferably, described step 4 specially utilizes electroplating technology, passes through ultraviolet photolithographic in conjunction with Cu layer mask plate
Technique prepares Cu layer 24.
Preferably, described step 5 specially utilizes electroplating technology, passes through ultraviolet in conjunction with upper strata NiFe mask plate
Photoetching process prepares upper strata layer of NiFe 25.
Preferably, described step 6 removes Cu plating seed layer 22 specifically by wet etching.
Preferably, described step 7 is specially spin-on polyimide protective layer, and wet etching polyimides is used in
The pad 26 of lead-in wire exposes.
The present invention compared with prior art, has a following beneficial effect:
(1) present invention uses upper strata NiFe line and the core structure of lower floor's NiFe line and standard MEMS work
Skill, so NiFe line is inducted spiral anisotropy by shape, therefore the structure temperature influence in NiFe line is little；
Micro fabrication can control very well and adjust the NiFe line spiral anisotropy anglec of rotation simultaneously.
(2) the micro fabrication preparation flow of the present invention is simple, can improve product yields.
(3) present invention uses such as the low cost MEMS technology such as ultraviolet photolithographic, plating, wet etching in a large number,
Cost is reduced on the premise of guarantee and integrated circuit are the most integrated.
Accompanying drawing explanation
Fig. 1 is the schematic top plan view of micro radio circle fluxgate sensor of the present invention.
Fig. 2 is micro radio circle fluxgate sensor preparation method schematic diagram of the present invention.
Description of reference numerals:
11: substrate, 12: upper strata NiFe line, 13: lower floor's NiFe line, 121: the lead-in wire weldering of upper strata NiFe line
Dish, 131: lower floor NiFe line lead pad, 15:Cu wire, 16:Cu conductor leading pad.
20:Si substrate, 21:SiO2 insulating barrier, 22:Cu Seed Layer, 23: lower floor's layer of NiFe, 24:
Cu layer, 25: upper strata layer of NiFe, 26: pad.
Detailed description of the invention
The present invention is made the most in detail below in conjunction with embodiment and accompanying drawing, intactly illustrates.
It is illustrated in figure 1 the schematic top plan view of micro radio circle fluxgate sensor of the present invention.As shown in Figure 1:
Micro radio circle fluxgate sensor of the present invention includes NiFe line, NiFe line lead pad, Cu wire 15 and
Cu conductor leading pad 16.
NiFe line is made up of respectively upper strata NiFe line 12 and lower floor's NiFe line 13 two parts.NiFe line goes between
Pad includes upper strata NiFe line lead pad 121 and lower floor NiFe line lead pad 131.Upper strata NiFe line
12 and lower floor's NiFe line 13 lay respectively at the above and below of Cu wire 15；Upper strata NiFe line 12 and under
Layer NiFe line 13 is different arragement directions；Such as upper strata NiFe line 12 is counterclockwise to rotate, lower floor
NiFe line 13 is for being rotated clockwise, but they have the identical anglec of rotation；Advantage of this is that
The upper and lower NiFe line is inducted spiral anisotropy by shape, and the structure temperature influence in layer of NiFe is little.
Upper strata NiFe line 12 is alternately connected at head and the tail successively with lower floor NiFe line 13.NiFe line is by two ends
NiFe line lead pad is drawn, i.e. upper strata NiFe line 12 is drawn by upper strata NiFe line lead pad 121, under
Layer NiFe line 13 is drawn by lower floor NiFe line lead pad 131；Upper strata NiFe line 12 and lower floor's NiFe line
Cu wire 15 is enclosed in centre by 13, and NiFe line and Cu wire 15 do not have insulating barrier and protection between the two
Layer, Cu wire 15 is drawn by the Cu conductor leading pad 16 at two ends.
Whole micro radio circle fluxgate sensor is positioned on substrate 11, and substrate 11 is with SiO2 insulating barrier
Si substrate.Si substrate provides for total and supports, and the SiO2 insulating barrier on Si substrate is used for insulating.Under
Layer NiFe line 13, Cu wire 15 and upper strata NiFe line 12 are grown on SiO2 insulating barrier successively.
The micro radio circle fluxgate sensor of the present invention uses standard MEMS (Micro Electro completely
Mechanical System) technique.Main technique includes: use magnetron sputtering technique to prepare plating seed layer,
Ultraviolet photolithographic technique is used (when preparing NiFe line and Cu wire, respective mask plate ultraviolet light to be irradiated
The figure needed could occur) and electroplating technology prepare NiFe line, Cu wire, employing wet-etching technology goes
Except Seed Layer.
It is illustrated in figure 2 the preparation method schematic diagram of micro radio circle fluxgate sensor of the present invention.Can by Fig. 2
Know: the preparation method of micro radio circle fluxgate sensor of the present invention mainly comprises the steps that
SiO2 insulating barrier 21 is grown on step 1:Si substrate 20.
Above-mentioned steps 1 grows SiO2 insulating barrier 21 specifically by thermal oxide at Si substrate 20, such as Fig. 2 (a)
Shown in.SiO2 insulating barrier 21 thickness grown is preferably 250nm.
Need exist for it is emphasized that the growth obtained by step 1 has the Si substrate of SiO2 insulating barrier to be figure
Substrate 11 in 1.
Step 2: growth Cu Seed Layer 22.
Above-mentioned steps 2 is specially and uses magnetron sputtering sputtering to generate Cu Seed Layer 22, as shown in Fig. 2 (a).
Preferably the thickness of Cu Seed Layer 22 is 200nm.
Here Cu Seed Layer 22 plays electric action when electroplating technology.
Step 3: preparation lower floor layer of NiFe 23.
Above-mentioned steps 3 specially utilizes electroplating technology, in conjunction with lower floor's NiFe mask plate by ultraviolet photolithographic technique
Preparation lower floor layer of NiFe 23, as shown in Fig. 2 (b).
Need exist for it is emphasized that obtain, by step 3, the lower floor NiFe that lower floor's layer of NiFe 23 is in Fig. 1
Line 13 and lower floor NiFe line lead pad 131.
Step 4: preparation Cu layer 24.
Above-mentioned steps 4 specially utilizes electroplating technology, is prepared by ultraviolet photolithographic technique in conjunction with Cu layer mask plate
Cu layer 24, as shown in Fig. 2 (c).
Need exist for it is emphasized that the Cu wire 15 and Cu that is in Fig. 1 of Cu layer 24 prepared by this step
Conductor leading pad 16.
Step 5: preparation upper strata layer of NiFe 25.
Above-mentioned steps 5 specially utilizes electroplating technology, in conjunction with upper strata NiFe mask plate by ultraviolet photolithographic technique
Preparation upper strata layer of NiFe 25, as shown in Fig. 2 (d).
Need exist for it is emphasized that the upper strata NiFe that is in Fig. 1 of upper strata layer of NiFe 25 prepared by this step
Line 12 and upper strata NiFe line lead pad 121.
Step 6: remove Cu plating seed layer.
Above-mentioned steps 6 removes Cu plating seed layer specifically by wet etching.The reason the step for of carrying out
It is, because when carrying out scribing, it is necessary to remove copper seed layer and just can carry out scribing.
Step 7: spin-on polyimide protective layer.
Above-mentioned steps 7 is specially spin-on polyimide protective layer, and wet etching polyimides is used in the weldering of lead-in wire
Dish 26 exposes, as shown in Fig. 2 (e).Here the pad 26 gone between refers to that the upper strata NiFe line in Fig. 1 draws
Wire bonding dish 121, lower floor NiFe line lead pad 131 and Cu conductor leading pad 16.Polyimides
Effect is protection pad.
Above-mentioned steps uses standard MEMS processes completely.Main technique includes: use magnetron sputtering technique system
Standby plating seed layer, uses ultraviolet photolithographic technique and electroplating technology to prepare NiFe line, Cu wire, uses wet method
Etching technics removes Seed Layer.Above-mentioned steps uses the low costs such as ultraviolet photolithographic, plating and wet etching in a large number
Technique ensure that economy.
Upper strata NiFe line, lower floor's NiFe line, Cu wire, NiFe line lead pad and Cu conductor leading
The making of the whole sensor such as pad includes magnetron sputtering, ultraviolet photolithographic, plating and four kinds of technique steps of wet etching
Suddenly.
Specific embodiment:
According to the micro radio that aforesaid a kind of micro radio circle fluxgate sensor and preparation method thereof is made
Circle fluxgate sensor is as follows:
In the present embodiment, upper strata NiFe line and lower floor's NiFe line use electroplated Ni 81Fe19 alloy, and width is equal
Being 50 μm, thickness is 1 μm, upper strata NiFe line along rotated counterclockwise by angle be 15 °, 30 °, 45
° or 60 ° of four kinds of modes, the corresponding respectively NiFe line length of described four kinds of anglecs of rotation be 580 μm, 302
μm, 221 μm or 260 μm, the corresponding respectively NiFe distance between centers of tracks of described four kinds of anglecs of rotation be 760 μm,
373 μm, 240 μm or 173 μm, the NiFe number of wire turns of described four kinds of anglecs of rotation correspondence respectively is 7
Circle, 13 circles, 21 circles or 29 circles.
It is-15 ° ,-30 ° ,-45 ° or-60 ° of four kinds of modes that lower floor's NiFe line rotates clockwise angle, institute
The NiFe line length stating four kinds of anglecs of rotation corresponding respectively is 580 μm, 302 μm, 221 μm or 260 μ
M, the corresponding respectively NiFe distance between centers of tracks of described four kinds of anglecs of rotation be 760 μm, 373 μm, 240 μm or
173 μm, the NiFe number of wire turns of described four kinds of anglecs of rotation correspondence respectively is 7 circles, 13 circles, 21 circles or 29
Circle.
It should be understood that NiFe number of wire turns refers to upper strata NiFe line or the number of lower floor's NiFe line.Cu leads
Line uses plating Cu, and a length of 5000 μm, width is 50 μm, and thickness is 2 μm.
Additionally need it is emphasized that above-described embodiment is the micro radio circle fluxgate sensing of four kinds of different structures
Device.One the most therein is: upper strata NiFe line and lower floor's NiFe line use electroplated Ni 81Fe19 alloy,
Width is 50 μm, and thickness is 1 μm；Upper strata NiFe line is 15 ° along rotated counterclockwise by angle, length
Being 580 μm, upper strata NiFe distance between centers of tracks is 760 μm, and the number of turn is 7 circles；Corresponding lower floor NiFe line is along suitable
The hour hands anglec of rotation is-15 °, a length of 580 μm, and lower floor's NiFe distance between centers of tracks is 760 μm, and the number of turn is 7
Circle.
Other three kinds of structures are similar to the above.
Micro radio circle fluxgate sensor of the present invention uses upper strata NiFe line and the structure of lower floor's NiFe line, on
Layer NiFe line and lower floor's NiFe line edge respectively counterclockwise and is rotated clockwise equal angular, then replaces head
Tail is sequentially connected.Owing to using standard MEMS processes, so NiFe line is inducted spiral anisotropy by shape,
Therefore structure temperature influence in NiFe line is little；Micro fabrication can control very well and adjust NiFe line spiral shell simultaneously
The rotation anisotropy anglec of rotation.
The micro fabrication preparation flow of micro radio circle fluxgate sensor disclosed by the invention is simple, can improve
The yields of product.
Claims (10)
1. a micro radio circle fluxgate sensor, it is characterised in that: include that NiFe line, NiFe line go between
Pad, Cu wire and Cu conductor leading pad；Described NiFe line is by upper strata NiFe line and lower floor's NiFe line
Two parts are constituted；Described NiFe line lead pad includes that upper strata NiFe line lead pad and lower floor's NiFe line draw
Wire bonding dish；Upper strata NiFe line is positioned at above Cu wire；Lower floor's NiFe line is positioned at below Cu wire；
Upper strata NiFe line and lower floor's NiFe line are different arragement directions；Upper strata NiFe line and lower floor's NiFe line are at head
Alternately it is connected successively at tail；Upper strata NiFe line is drawn by upper strata NiFe line lead pad；Lower floor's NiFe line by
Lower floor NiFe line lead pad is drawn；Cu wire is enclosed in centre by upper strata NiFe line and lower floor's NiFe line,
Cu wire is drawn by the Cu conductor leading pad at two ends.
2. micro radio circle fluxgate sensor as claimed in claim 1, it is characterised in that: NiFe line with
Insulating barrier and protective layer is not had between Cu wire.
3. micro radio circle fluxgate sensor as claimed in claim 1, it is characterised in that: upper strata NiFe
Line is counterclockwise to rotate, and lower floor's NiFe line is for being rotated clockwise, and they have the identical anglec of rotation
Degree.
4. micro radio circle fluxgate sensor as claimed in claim 3, it is characterised in that: upper strata NiFe
Line is 15 °, 30 °, 45 ° or 60 ° of four kinds of modes along rotated counterclockwise by angle；Lower floor's NiFe line is along up time
The pin anglec of rotation is-15 ° ,-30 ° ,-45 ° or-60 ° of four kinds of modes.
5. the micro radio circle fluxgate sensor as described in Claims 1-4 is arbitrary, it is characterised in that: micro-
Type coil fluxgate sensor is positioned on substrate, and substrate is the Si substrate with SiO2 insulating barrier.
6. a micro radio circle fluxgate sensor preparation method, comprises the following steps:
Step 1:Si Grown SiO2 insulating barrier；
Step 2: growth Cu Seed Layer；
Step 3: preparation lower floor layer of NiFe；
Step 4: preparation Cu layer；
Step 5: preparation upper strata layer of NiFe；
Step 6: remove Cu plating seed layer；
Step 7: spin-on polyimide protective layer.
7. micro radio circle fluxgate sensor preparation method as claimed in claim 6, it is characterised in that: institute
State step 1 and grow SiO2 insulating barrier specifically by thermal oxide on a si substrate.
8. micro radio circle fluxgate sensor preparation method as claimed in claim 6, it is characterised in that: institute
State step 2 and be specially employing magnetron sputtering sputtering generation Cu Seed Layer.
9. micro radio circle fluxgate sensor preparation method as claimed in claim 6, it is characterised in that: institute
State step 3 and specially utilize electroplating technology, under being prepared by ultraviolet photolithographic technique in conjunction with lower floor's NiFe mask plate
Layer layer of NiFe.
10. micro radio circle fluxgate sensor preparation method as claimed in claim 6, it is characterised in that: institute
State step 5 and specially utilize electroplating technology, prepared by ultraviolet photolithographic technique in conjunction with upper strata NiFe mask plate
Layer layer of NiFe.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106772142A (en) * | 2016-11-25 | 2017-05-31 | 中国科学院地质与地球物理研究所 | A kind of fluxgate sensor and its manufacture method |
| WO2024122330A1 (en) * | 2022-12-07 | 2024-06-13 | 愛知製鋼株式会社 | Method for manufacturing magnetic sensor element |
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| CN104614690A (en) * | 2014-12-18 | 2015-05-13 | 哈尔滨理工大学 | Micro-array type fluxgate sensor |
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| US4623842A (en) * | 1982-08-27 | 1986-11-18 | Her Majesty The Queen In Right Of Canada | Magnetometer array with magnetic field sensors on elongate support |
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