CN106129144A - Vanadic anhydride photodetector and preparation method thereof - Google Patents
Vanadic anhydride photodetector and preparation method thereof Download PDFInfo
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- CN106129144A CN106129144A CN201610565864.7A CN201610565864A CN106129144A CN 106129144 A CN106129144 A CN 106129144A CN 201610565864 A CN201610565864 A CN 201610565864A CN 106129144 A CN106129144 A CN 106129144A
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- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 title claims abstract description 141
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000002070 nanowire Substances 0.000 claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 66
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000006185 dispersion Substances 0.000 claims abstract description 22
- 238000001027 hydrothermal synthesis Methods 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000002156 mixing Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 238000005119 centrifugation Methods 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 6
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000002270 dispersing agent Substances 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 239000000376 reactant Substances 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims 1
- 239000000047 product Substances 0.000 description 20
- 230000008859 change Effects 0.000 description 8
- 239000013067 intermediate product Substances 0.000 description 8
- 230000005611 electricity Effects 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000000280 densification Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a kind of vanadic anhydride photodetector and preparation method thereof.Photodetector is formed by investing vanadic anhydride light-sensitive element on substrate, that two ends are equipped with electrode, and wherein, vanadic anhydride light-sensitive element is the vanadium pentoxide nanowires dense array of Orienting ordered arrangement；Method is first to use hydro-thermal method to obtain VO2(A) nano wire, then by VO2(A) nano wire and water are ultrasonic after mixing, and obtain VO2(A) nanowire dispersion, afterwards, first by VO2(A), during nanowire dispersion is added dropwise to chloroform, VO is treated2(A) nano wire is after chloroform surface self-organization becomes the dense array of Orienting ordered arrangement, uses substrate to be picked up, obtains being covered with on it VO2(A) substrate of the dense array of nano wire Orienting ordered arrangement, then after being annealed, in the two ends of the vanadium pentoxide nanowires dense array of Orienting ordered arrangement, electrode is installed, prepares purpose product.Its dark current and photoelectric current and difference between the two are the biggest, are extremely easy to be widely used in photodetection field.
Description
Technical field
The present invention relates to a kind of photodetector and preparation method, especially a kind of vanadic anhydride photodetector and
Preparation method.
Background technology
The band gap of vanadic anhydride is 2.3eV, and its excitation wavelength is positioned at visible region, when radiation of visible light to five oxidation
Time on two vanadium, excite the electron transition in valence band to conduction band, thus cause resistance to change, by detecting the change of current value
Photodetection can be realized.In recent years, people, in order to realize the photodetection of vanadic anhydride, have made some good tries and have exerted
Power, such as entitled " Centimeter-Long V2O5Nanowires:From Synthesis to Field-Emission,
Electrochemical, Electrical Transport, and Photoconductive Properties ",
Adv.Mater., Vol.22, Page 2547-2552,2010, (" centimeter length vanadium pentoxide nanowires: show up from synthesis and send out
Penetrate, electrochemistry, electronic transport and photoconductive property ", " advanced material " 2010 volume 22 page 2547～2552) article.Should
Product described in literary composition is by water heat transfer 80～120nm width, the single vanadium pentoxide nanowires of centimeter length, and product is made
When carrying out photoelectric properties test for light-sensitive element, it is placed in SiO2On/Si substrate, use laser or the visible ray of wavelength 450nm
Irradiate.Though this product has good photoelectric properties, all there is weak point with its preparation method, first, by single
The product that vanadium pentoxide nanowires is constituted is the least by the effective area of illumination, causes its dark current under 1V voltage minimum,
Being only 12.5nA (na), the photoelectric current after its illumination is also only 15.2nA, the difference between photoelectric current and dark current is only
2.7nA.Also < 30nA, pole is unfavorable for detecting the change of photoelectric current to product dark current under 100V voltage, and these the most greatly increase
Add the difficulty of test so that it is extremely difficult actual application；Secondly, it is bigger that preparation method can not obtain difference between photoelectric current and dark current
Product.
Summary of the invention
The technical problem to be solved in the present invention is for overcoming weak point of the prior art, it is provided that a kind of photoelectric current and dark electricity
The vanadic anhydride photodetector that the difference of stream changes greatly.
Another technical problem that the invention solves the problems that is for providing the preparation of a kind of above-mentioned vanadic anhydride photodetector
Method.
For solving the technical problem of the present invention, the technical scheme used is: vanadic anhydride photodetector is by investing
On substrate, two ends are equipped with the vanadic anhydride light-sensitive element of electrode and form, particularly,
Described vanadic anhydride light-sensitive element is the vanadium pentoxide nanowires dense array of Orienting ordered arrangement；
The line of the vanadium pentoxide nanowires of the vanadium pentoxide nanowires dense array of described composition Orienting ordered arrangement
A diameter of 200～600nm, line length is 10～50 μm.
Further improvement as vanadic anhydride photodetector:
Preferably, substrate is silicon oxide substrate, or glass substrate, or ceramic substrate.
Preferably, electrode is gold electrode, or platinum electrode, or silver electrode, or copper electrode.
Preferably, the light-receiving area of vanadic anhydride light-sensitive element is 0.7～1.3mm × 15～25 μm.
For solving another technical problem of the present invention, another technical scheme used is: above-mentioned vanadic anhydride
The preparation method of photodetector includes hydro-thermal method, and particularly key step is as follows:
Step 1, first uses hydro-thermal method to obtain VO2(A) nano wire, then by VO2(A) nano wire and water are 1 according to weight ratio:
After the ratio mixing of 800～1200, ultrasonic at least 10min, obtain VO2(A) nanowire dispersion；
Step 2, first according to VO2(A) weight ratio of nanowire dispersion and chloroform is the ratio of 1: >=0.8, by VO2(A) receive
Rice noodle dispersant liquid drop adds in chloroform, treats VO2(A) nano wire becomes the dense array of Orienting ordered arrangement in chloroform surface self-organization
After, use substrate to be picked up, obtain being covered with on it VO2(A) substrate of the dense array of nano wire Orienting ordered arrangement, then will
VO it is covered with on it2(A) substrate of the dense array of nano wire Orienting ordered arrangement is annealed at least at being placed in 360～400 DEG C
150min, obtains being covered with on it substrate of the vanadium pentoxide nanowires dense array of Orienting ordered arrangement；
Step 3, installs electrode in the two ends of the vanadium pentoxide nanowires dense array of Orienting ordered arrangement, prepares five oxygen
Change two vanadium photodetectors.
Further improvement as the preparation method of vanadic anhydride photodetector:
Preferably, hydro-thermal method obtains VO2(A) process of nano wire is, first by vanadium pentoxide powder, oxalic acid and water according to
Weight ratio be 0.2～0.4:0.4～0.6:50 ratio mixing after stir at least 1h, obtain precursor solution, then by precursor
Solution is placed in air-tight state, after reacting at least 50h, chilled reactant liquor carries out solid-liquid successively and divides at 200～240 DEG C
From, the process washing and be dried.
Preferably, by VO2(A) for dripping along chamber wall time during nanowire dispersion is added dropwise to chloroform.
Preferably, substrate is silicon oxide substrate, or glass substrate, or ceramic substrate.
Preferably, electrode is gold electrode, or platinum electrode, or silver electrode, or copper electrode.
Preferably, solid-liquid separation is processed as centrifugation, its rotating speed is 8000～12000r/min, the time be 5～
15min, carrying out washing treatment is the alternately cleaning using deionized water and ethanol that the solids of isolated carries out 2～3 times, cleans
Time separate solids be centrifugation, dried be will clean after solids be placed at 40～80 DEG C baking 10～14h.
Provide the benefit that relative to prior art:
One, causes the vanadium pentoxide nanowires of the Orienting ordered arrangement in prepared intermediate product purpose product
Close array uses scanning electron microscope, X-ray diffractometer, semiconductor test to characterize system respectively and probe station characterizes, it tie
Fruit understands, intermediate product be linear diameter be 200～600nm, line length be that the vanadium pentoxide nanowires of 10～50 μm is oriented and ordered
It is arranged in dense array；Intermediate product is made up of vanadic anhydride；After the making alive of intermediate product two ends, it is respectively placed in unglazed photograph
With the difference change between dark current, dark current and photoelectric current during radiation of visible light all improves more than Radix Achyranthis Bidentatae than prior art,
And responsiveness and detectivity higher.This by five oxidations two investing Orienting ordered arrangement on substrate, that two ends are equipped with electrode
The purpose product that vanadium nano wire dense array is assembled into, both due to the fixation of substrate, again because of five oxygen of Orienting ordered arrangement
Change two vanadium nano wire dense array and there is big light-receiving area, and substantially increase the dark current of purpose product, photoelectric current and
Difference change between the two so that it is the practicality of great photodetection.
Its two, preparation method science, effectively.Not only prepare the purpose product that the difference of photoelectric current and dark current changes greatly
Thing vanadic anhydride photodetector；Also make it possess higher responsiveness and detectivity, more have preparation process phase
To simple and facilitate implementation, the light-receiving area of purpose product is unrestricted, and the feature of low cost；And then make purpose product easily
In being widely used in photodetection field.
Accompanying drawing explanation
Fig. 1 is to the VO using hydro-thermal method to obtain2(A) nano wire and VO2(A) nanometer line ordered array uses respectively and sweeps
Retouch Electronic Speculum (SEM) and X-ray diffraction (XRD) instrument carries out one of result of characterizing.Wherein, Fig. 1 a is to use hydro-thermal method to obtain
VO2(A) SEM image of nano wire；Fig. 1 b is VO2(A) SEM image of nanometer line ordered array；Fig. 1 c is Fig. 1 a and shown in Fig. 1 b
The XRD spectra of nano wire, the bottom spectral line of this spectrogram is VO2(A) standard spectral line JCPDS Card:42-0876, top
Curve be the spectral line of nano wire using hydro-thermal method to obtain, it shows that nano wire is VO2(A) nano wire.
Fig. 2 is one of result of using SEM and XRD to characterize respectively prepared intermediate product.Wherein, during Fig. 2 a is
Between the SEM image of product, Fig. 2 b is the XRD spectra of intermediate product, the standard spectrum that bottom spectral line is vanadic anhydride of this spectrogram
Line JCPDS Card:89-0612, the spectral line that curve is intermediate product on top；Be can be seen that by it, intermediate product is orientation
The vanadium pentoxide nanowires dense array of ordered arrangement.
Fig. 3 be prepared purpose product uses semiconductor test characterize system and result that probe station characterizes it
One.During sign, the light-receiving area of purpose product is 1mm × 20 μm, and the bias that it adds is that power when 3V, radiation of visible light is
105mW/cm2, unglazed according to and the switch periods of radiation of visible light be respectively 10s.The voltage-current curve of product for the purpose of Fig. 3 a
Figure, the time current curve figure of product for the purpose of Fig. 3 b, the response time curve chart of product for the purpose of Fig. 3 c；From the figure 3, it may be seen that
Purpose product is unglazed according to time dark current be 34 μ A, have current value during illumination be increase, between its photoelectric current and dark current
Difference is up to 3 μ A, and when using periodic light source ON/OFF to irradiate, current value is also correspondingly to change, and its response time (rises
And decline) it being respectively 17ms and 12ms, the responsiveness of purpose product is 160.3mA/W, detectivity is 6.5 × 108Jones, this
The photoelectric detector performance that photoelectric properties are prepared with other two-dimensional material of document report is suitable, and even some numerical value is an advantage over literary composition
Offer report.
Detailed description of the invention
Below in conjunction with the accompanying drawings the optimal way of the present invention is described in further detail.
First buy from market or prepare voluntarily:
VO2(A) nano wire；
Chloroform；
Silicon oxide substrate, glass substrate and ceramic substrate as substrate；
Gold electrode, platinum electrode, silver electrode and copper electrode as electrode.
Wherein,
Hydro-thermal method obtains VO2(A) process of nano wire is, first by vanadium pentoxide powder, oxalic acid and water according to weight ratio
Be 0.2～0.4:0.4～0.6:50 ratio mixing after stir at least 1h, obtain precursor solution, then precursor solution put
In air-tight state, after reacting at least 50h at 200～240 DEG C, chilled reactant liquor is carried out successively solid-liquid separation, washing
With dry process；Solid-liquid separation therein is processed as centrifugation, its rotating speed is 8000～12000r/min, the time be 5～
15min, carrying out washing treatment is the alternately cleaning using deionized water and ethanol that the solids of isolated carries out 2～3 times, cleans
Time separate solids be centrifugation, dried be will clean after solids be placed at 40～80 DEG C baking 10～14h.
Then,
Embodiment 1
Concretely comprising the following steps of preparation:
Step 1, first uses hydro-thermal method to obtain VO2(A) nano wire.Again by VO2(A) nano wire and water are 1 according to weight ratio:
After the ratio mixing of 800, ultrasonic 20min, obtain VO2(A) nanowire dispersion.
Step 2, first according to VO2(A) weight ratio of nanowire dispersion and chloroform is the ratio of 1:0.8, by VO2(A) nanometer
Line dispersion liquid is added dropwise in chloroform along chamber wall, treats VO2(A) nano wire becomes the cause of Orienting ordered arrangement in chloroform surface self-organization
After close array, use substrate to be picked up, obtain being covered with on it VO2(A) lining of the dense array of nano wire Orienting ordered arrangement
The end；Wherein, substrate is silicon oxide substrate.VO will be covered with again on it2(A) substrate of the dense array of nano wire Orienting ordered arrangement
It is placed at 360 DEG C annealing 170min, obtains being covered with on it lining of the vanadium pentoxide nanowires dense array of Orienting ordered arrangement
The end.
Step 3, installs electrode in the two ends of the vanadium pentoxide nanowires dense array of Orienting ordered arrangement；Wherein, electricity
Extremely gold electrode, prepares the vanadic anhydride photodetector as shown in the curve in Fig. 3.
Embodiment 2
Concretely comprising the following steps of preparation:
Step 1, first uses hydro-thermal method to obtain VO2(A) nano wire.Again by VO2(A) nano wire and water are 1 according to weight ratio:
After the ratio mixing of 900, ultrasonic 18min, obtain VO2(A) nanowire dispersion.
Step 2, first according to VO2(A) weight ratio of nanowire dispersion and chloroform is the ratio of 1:3, by VO2(A) nano wire
Dispersion liquid is added dropwise in chloroform along chamber wall, treats VO2(A) nano wire becomes the densification of Orienting ordered arrangement in chloroform surface self-organization
After array, use substrate to be picked up, obtain being covered with on it VO2(A) substrate of the dense array of nano wire Orienting ordered arrangement；
Wherein, substrate is silicon oxide substrate.VO will be covered with again on it2(A) substrate of the dense array of nano wire Orienting ordered arrangement is put
Anneal at 370 DEG C 165min, obtains being covered with on it substrate of the vanadium pentoxide nanowires dense array of Orienting ordered arrangement.
Step 3, installs electrode in the two ends of the vanadium pentoxide nanowires dense array of Orienting ordered arrangement；Wherein, electricity
Extremely gold electrode, prepares the vanadic anhydride photodetector as shown in the curve in Fig. 3.
Embodiment 3
Concretely comprising the following steps of preparation:
Step 1, first uses hydro-thermal method to obtain VO2(A) nano wire.Again by VO2(A) nano wire and water are 1 according to weight ratio:
After the ratio mixing of 1000, ultrasonic 15min, obtain VO2(A) nanowire dispersion.
Step 2, first according to VO2(A) weight ratio of nanowire dispersion and chloroform is the ratio of 1:6, by VO2(A) nano wire
Dispersion liquid is added dropwise in chloroform along chamber wall, treats VO2(A) nano wire becomes the densification of Orienting ordered arrangement in chloroform surface self-organization
After array, use substrate to be picked up, obtain being covered with on it VO2(A) substrate of the dense array of nano wire Orienting ordered arrangement；
Wherein, substrate is silicon oxide substrate.VO will be covered with again on it2(A) substrate of the dense array of nano wire Orienting ordered arrangement is put
Anneal at 380 DEG C 160min, obtains being covered with on it substrate of the vanadium pentoxide nanowires dense array of Orienting ordered arrangement.
Step 3, installs electrode in the two ends of the vanadium pentoxide nanowires dense array of Orienting ordered arrangement；Wherein, electricity
Extremely gold electrode, prepares the vanadic anhydride photodetector as shown in the curve in Fig. 3.
Embodiment 4
Concretely comprising the following steps of preparation:
Step 1, first uses hydro-thermal method to obtain VO2(A) nano wire.Again by VO2(A) nano wire and water are 1 according to weight ratio:
After the ratio mixing of 1100, ultrasonic 13min, obtain VO2(A) nanowire dispersion.
Step 2, first according to VO2(A) weight ratio of nanowire dispersion and chloroform is the ratio of 1:8, by VO2(A) nano wire
Dispersion liquid is added dropwise in chloroform along chamber wall, treats VO2(A) nano wire becomes the densification of Orienting ordered arrangement in chloroform surface self-organization
After array, use substrate to be picked up, obtain being covered with on it VO2(A) substrate of the dense array of nano wire Orienting ordered arrangement；
Wherein, substrate is silicon oxide substrate.VO will be covered with again on it2(A) substrate of the dense array of nano wire Orienting ordered arrangement is put
Anneal at 390 DEG C 155min, obtains being covered with on it substrate of the vanadium pentoxide nanowires dense array of Orienting ordered arrangement.
Step 3, installs electrode in the two ends of the vanadium pentoxide nanowires dense array of Orienting ordered arrangement；Wherein, electricity
Extremely gold electrode, prepares the vanadic anhydride photodetector as shown in the curve in Fig. 3.
Embodiment 5
Concretely comprising the following steps of preparation:
Step 1, first uses hydro-thermal method to obtain VO2(A) nano wire.Again by VO2(A) nano wire and water are 1 according to weight ratio:
After the ratio mixing of 1200, ultrasonic 10min, obtain VO2(A) nanowire dispersion.
Step 2, first according to VO2(A) weight ratio of nanowire dispersion and chloroform is the ratio of 1:10, by VO2(A) nanometer
Line dispersion liquid is added dropwise in chloroform along chamber wall, treats VO2(A) nano wire becomes the cause of Orienting ordered arrangement in chloroform surface self-organization
After close array, use substrate to be picked up, obtain being covered with on it VO2(A) lining of the dense array of nano wire Orienting ordered arrangement
The end；Wherein, substrate is silicon oxide substrate.VO will be covered with again on it2(A) substrate of the dense array of nano wire Orienting ordered arrangement
It is placed at 400 DEG C annealing 150min, obtains being covered with on it lining of the vanadium pentoxide nanowires dense array of Orienting ordered arrangement
The end.
Step 3, installs electrode in the two ends of the vanadium pentoxide nanowires dense array of Orienting ordered arrangement；Wherein, electricity
Extremely gold electrode, prepares the vanadic anhydride photodetector as shown in the curve in Fig. 3.
Select the silicon oxide substrate as substrate or glass substrate or ceramic substrate the most respectively, as electrode gold electrode or
Platinum electrode or silver electrode or copper electrode, repeat above-described embodiment 1～5, prepared five oxidations as shown in the curve in Fig. 3 equally
Two vanadium photodetectors.
Obviously, vanadic anhydride photodetector of the present invention and preparation method thereof can be entered by those skilled in the art
The various changes of row and modification are without departing from the spirit and scope of the present invention.So, if these of the present invention are revised and modification
Belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these changes and modification exists
In.
Claims (10)
1. a vanadic anhydride photodetector, by investing the photosensitive unit of vanadic anhydride on substrate, that two ends are equipped with electrode
Part forms, it is characterised in that:
Described vanadic anhydride light-sensitive element is the vanadium pentoxide nanowires dense array of Orienting ordered arrangement；
The linear diameter of the vanadium pentoxide nanowires of the vanadium pentoxide nanowires dense array of described composition Orienting ordered arrangement
Be 200～600nm, line length be 10～50 μm.
Vanadic anhydride photodetector the most according to claim 1, is characterized in that substrate is silicon oxide substrate, or glass
Substrate, or ceramic substrate.
Vanadic anhydride photodetector the most according to claim 1, is characterized in that electrode is gold electrode, or platinum electrode,
Or silver electrode, or copper electrode.
Vanadic anhydride photodetector the most according to claim 1, is characterized in that being subject to of vanadic anhydride light-sensitive element
Light area is 0.7～1.3mm × 15～25 μm.
5. a preparation method for vanadic anhydride photodetector described in claim 1, including hydro-thermal method, it is characterised in that main
Want step as follows:
Step 1, first uses hydro-thermal method to obtain VO2(A) nano wire, then by VO2(A) nano wire and water according to weight ratio be 1:800～
After the ratio mixing of 1200, ultrasonic at least 10min, obtain VO2(A) nanowire dispersion；
Step 2, first according to VO2(A) weight ratio of nanowire dispersion and chloroform is the ratio of 1: >=0.8, by VO2(A) nano wire
Dispersant liquid drop adds in chloroform, treats VO2(A) nano wire is after chloroform surface self-organization becomes the dense array of Orienting ordered arrangement,
Use substrate to be picked up, obtain being covered with on it VO2(A) substrate of the dense array of nano wire Orienting ordered arrangement, then by it
On be covered with VO2(A) substrate of the dense array of nano wire Orienting ordered arrangement is annealed at being placed in 360～400 DEG C at least 150min,
Obtain being covered with on it substrate of the vanadium pentoxide nanowires dense array of Orienting ordered arrangement；
Step 3, installs electrode in the two ends of the vanadium pentoxide nanowires dense array of Orienting ordered arrangement, prepares five oxidations two
Vanadium photodetector.
The preparation method of vanadic anhydride photodetector the most according to claim 5, is characterized in that hydro-thermal method obtains VO2
(A) process of nano wire is, is first 0.2～0.4:0.4～0.6:50 by vanadium pentoxide powder, oxalic acid and water according to weight ratio
Ratio mixing after stir at least 1h, obtain precursor solution, then precursor solution be placed in air-tight state, in 200～240 DEG C
After lower reaction at least 50h, chilled reactant liquor is carried out successively solid-liquid separation, the process washed and be dried.
The preparation method of vanadic anhydride photodetector the most according to claim 5, is characterized in that VO2(A) nano wire
Dispersant liquid drop is to drip along chamber wall when adding in chloroform.
The preparation method of vanadic anhydride photodetector the most according to claim 5, is characterized in that substrate is silicon oxide
Substrate, or glass substrate, or ceramic substrate.
The preparation method of vanadic anhydride photodetector the most according to claim 5, is characterized in that electrode is gold electrode,
Or platinum electrode, or silver electrode, or copper electrode.
The preparation method of vanadic anhydride photodetector the most according to claim 6, is characterized in that solid-liquid separation processes
For centrifugation, its rotating speed is 8000～12000r/min, the time is 5～15min, and carrying out washing treatment is for using deionized water and second
Alcohol carries out the alternately cleaning of 2～3 times to the solids of isolated, and separating solids during cleaning is centrifugation, dried
Baking 10～14h it is placed at 40～80 DEG C for the solids after cleaning.
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