CN106129142A - A kind of preparation method of vulcanized lead quantum dot - Google Patents

A kind of preparation method of vulcanized lead quantum dot Download PDF

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CN106129142A
CN106129142A CN201610465936.0A CN201610465936A CN106129142A CN 106129142 A CN106129142 A CN 106129142A CN 201610465936 A CN201610465936 A CN 201610465936A CN 106129142 A CN106129142 A CN 106129142A
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quantum dot
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vulcanized lead
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焦岳超
瞿博阳
张朋
刘萍
朱永胜
武明义
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Zhongyuan University of Technology
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
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    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
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    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0324Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
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    • C01P2004/60Particles characterised by their size
    • C01P2004/64Nanometer sized, i.e. from 1-100 nanometer

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Abstract

The invention discloses the preparation method of a kind of vulcanized lead quantum dot.Using water bath heating to prepare and have good monodispersity, size is about the vulcanized lead quantum dot of 3 ~ 5 nm.Vulcanized lead quanta point material can reduce transmission light and the energy loss of long wavelength's incident illumination, improves solar cell utilization ratio in the range of whole solar spectrum, improves the photoelectric transformation efficiency of solaode further.The method is simple, it is easy to operation, low cost, can large-area manufacturing produce.

Description

A kind of preparation method of vulcanized lead quantum dot
Technical field
The present invention relates to technical field of solar batteries, particularly relate to the preparation method of a kind of vulcanized lead quantum dot.
Background technology
At present, increasingly reducing at Fossil fuel, in the case of greenhouse effect constantly aggravates, solar energy has become the mankind to be made By the important component part of the energy.Solar energy is due to cleanliness without any pollution, rich reserves.Solar energy is the renewable of cleanliness without any pollution The energy, and rich reserves and without geographical restrictions, be used for substituting will be exhausted fossil energy, and China facing can be solved The impact of low-carbon economy.In all kinds of novel solar cells, quantum dot combines in solar-electricity with up-conversion luminescent material Field, pond becomes study hotspot with simple, the of a relatively high photoelectric transformation efficiency of low cost, processing technology.
Quantum dot (QDs), can be described as again nanocrystalline, typically by the nanometer that II VI race or group IV-VI are elementary composition Grain, particle diameter is typically in the range of between 1 ~ 10 nm.When being smaller in size than its effective Bohr radius of quantum dot, quantum limitation effect (quantum confinement effect) is fairly obvious, shows the thing of this change along with size own of uniqueness Physicochemical performance, photoelectric properties and magnetic performance.The main application fields of quanta point material be solaode, biomarker and Biosensor etc..Such as efficiency in the range of application sizes quanta point material can improve whole solar spectrum, decreases Through and short wavelength range in energy loss, it means that the photoelectric transformation efficiency of solaode can obtain significantly Improve.Additionally, quantum dot as FRET (fluorescence resonance energy transfer) (Fluorescence resonant energy transfer, FRET) donor or donor, combine with up-conversion luminescent material and have at aspects such as biomedicine, sensor, solaodes The biggest application potential.
As the important compound in group IV-VI quasiconductor, vulcanized lead due to less band gap (0.41 eV, 300 And bigger exciton radii (18 nm) K), the PbS of nanoscale can band from near-infrared blue shift to visible region, present solely Special optical property and electrical properties.Using organometallic route method synthesis PbS nano material traditionally, the method has often used Toxic starting materials, and need the reaction condition such as high temperature and high boiling point.At present, some researchers have reported that employing wet chemical method synthesis The PbS nano material of different-shape, such as nanometer rods, nanometer sheet, tree etc., but use wet chemical method synthesis PbS amount Son point but rarely has report.Bakueva research group reported first employing surfactant monothio glycerol (TGL) and two sulfur Prepare size uniform in aqueous for the mixture of glycerol (DTG), diameter is about the PbS quantum of 4 nm ± 1 nm Point.Deng etc. use surfactant dihydrolipoic acid (DHLA) success synthesizing water-solubility under room temperature and aqueous conditions PbS quantum.Although by using surfactant monothio glycerol (TGL) and dithio glycerol or dihydrolipoic acid (DHLA) PbS quantum can be prepared under aqueous conditions, but this type of stabilizer is expensive, and toxic, uncomfortable Close large-scale production.Therefore, in the urgent need to finding the preparation method of a kind of cheap preparation PbS quantum.
Summary of the invention
Present invention aims to the deficiency in prior art, it is provided that the preparation method of a kind of vulcanized lead quantum dot.
The preparation method of a kind of vulcanized lead quantum dot, comprises the steps:
A. auxiliary agent is prepared according to the amount of material: cetyl trimethylammonium bromide 20 ~ 30 parts, sodium lauryl sulphate 20 ~ 30 parts, sodium citrate 40 ~ 60 parts;
B. above-mentioned mixed aid being added bath temperature is in 50 DEG C ~ 70 DEG C deionized waters, continues high-speed stirred 3 ~ 5 min and makes Be completely dissolved, be configured to mixed solution;
C. add few drops dilute nitric acid solution in above-mentioned mixed solution, pH value is adjusted to 3 ~ 5, in this solution, then add lemon Lemon acid sodium, the amount of sodium citrate material is 2 ~ 4 times of lead acetate, and solution continues high-speed stirred 1 ~ 2 min, until becoming light yellow Solution;
D. continuing to be slowly added to sodium citrate, the amount of sodium citrate material is 2 ~ 4 times of thiourea, and solution continues high-speed stirred 3 ~ 5 Min, solution colour is slowly become sepia from orange-yellow;
E. by above-mentioned gained mixed solution, after room temperature cooling, through centrifugal treating, use deionized water, dehydrated alcohol each clearly successively Wash three times, the vulcanized lead obtained is stored in dehydrated alcohol.
The amount of the material of described sodium citrate is cetyl trimethylammonium bromide, both sodium lauryl sulphates material Amount sum.
Described lead acetate solution and the amount of thiourea solution contained substance are equal.
The diameter dimension of the described vulcanized lead quantum dot prepared is 3 ~ 5 nm.
Described auxiliary agent is with the gauge of material: cetyl trimethylammonium bromide 25 parts, sodium lauryl sulphate 25 parts, lemon 50 parts of lemon acid sodium;
Described lead acetate solution and the amount of thiourea solution contained substance are all the amount 2.5 times of sodium citrate material.
Described preparation process adds time that time from thiourea solution and counts, and after reactant has added, the time controls 3 ~ 5 minutes.Response time strictly to control, overlong time, then can not prepare quantum dot.
In described step b, above-mentioned mixed aid being added bath temperature is in 60 DEG C of deionized waters.
Beneficial effects of the present invention:
Reaction temperature is relatively low, and reaction condition is gentle;Without using high boiling solvent;Preparation method safety non-toxic, experimental repeatability Good;Gained vulcanized lead quantum dot has good monodispersity.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is prepared PbS quantum transmission electron microscope picture;
Fig. 2 is prepared PbS quantum XRD figure spectrum.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, right The present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, not For limiting the present invention.
The preparation method of a kind of vulcanized lead quantum dot, comprises the steps:
A. according to the amount preparation auxiliary agent of material: cetyl trimethylammonium bromide 20 ~ 30 parts, sodium lauryl sulphate 20 ~ 30 Part, sodium citrate 40 ~ 60 parts;
B. above-mentioned mixed aid being added temperature is 50 DEG C ~ 70 DEG C water, continues high-speed stirred 3 ~ 5 min and is allowed to be completely dissolved, joins It is set to mixed solution;
C. add few drops dilute nitric acid solution in above-mentioned mixed solution, pH value is adjusted to 3 ~ 5, in this solution, then add lemon Lemon acid sodium, the amount of sodium citrate material is 2 ~ 4 times of lead acetate, and solution continues high-speed stirred 1 ~ 2 min, until becoming light yellow Solution;
D. continuing to be slowly added to sodium citrate, the amount of sodium citrate material is 2 ~ 4 times of thiourea, and solution continues high-speed stirred 3 ~ 5 Min, solution colour is slowly become sepia from orange-yellow;
E. by above-mentioned gained mixed solution, after room temperature cooling, through centrifugal treating, use deionized water, dehydrated alcohol each clearly successively Wash three times, the vulcanized lead obtained is stored in dehydrated alcohol.
The amount of the material of described sodium citrate is cetyl trimethylammonium bromide, both sodium lauryl sulphates material Amount sum.
The amount of described lead acetate solution and thiourea solution contained substance is equal.
The diameter dimension of the vulcanized lead quantum dot prepared is 3 ~ 5 nm.
Described auxiliary agent is with the gauge of material: cetyl trimethylammonium bromide 25 parts, sodium lauryl sulphate 25 parts, Fructus Citri Limoniae 50 parts of sodium of acid;
The amount of described lead acetate solution and thiourea solution contained substance is all the amount 2.5 times of sodium citrate material.
Described preparation process adds time that time from thiourea solution and counts, and after reactant has added, the time controls 3 ~ 5 minutes.Response time strictly to control, overlong time, then can not prepare quantum dot.
In described step b, above-mentioned mixed aid being added bath temperature is in 60 DEG C of deionized waters.
Embodiment 1
1) cetyl trimethylammonium bromide 18.2 mg (0.05 mmol), sodium lauryl sulphate 14.4 mg are weighed respectively (0.05 mmol), sodium citrate 29.4 mg (0.1 mmol), join in the beaker that 50 mL water temperatures are 60 DEG C, continues height Speed stirring 3 ~ 5 min are allowed to be completely dissolved;
2) add few drops dilute nitric acid solution in above-mentioned mixed solution, and with pH meter regulation pH value to 4, be subsequently adding 5 mL 0.05 Mol/L lead acetate solution persistently high-speed stirred 2min, now solution becomes light yellow;
3) be slowly added to thiourea solution that 10 mL concentration are 0.025 mol/L lasting high-speed stirred 4 min, solution colour by Orange-yellow slowly become sepia.
4) by above-mentioned gained mixed solution, after room temperature cooling, through centrifugal treating, successively with deionized water, dehydrated alcohol Each cleaning three times, is stored in dehydrated alcohol by the vulcanized lead obtained.
Embodiment 2
1) cetyl trimethylammonium bromide 36.4mg (0.1 mmol), sodium lauryl sulphate 28.8mg are weighed respectively (0.1 mmol), sodium citrate 58.8 mg (0.2 mmol), join in the beaker that 100 mL water temperatures are 70 DEG C, continues at a high speed Stirring 3 ~ 5 min are allowed to be completely dissolved;
2) add few drops dilute nitric acid solution in above-mentioned mixed solution, and with pH meter regulation pH value to 5, be subsequently adding 40ml 0.05 Mol/L thiourea solution persistently high-speed stirred 2 min;
3) lead acetate solution that 80 mL concentration are 0.025 mol/L persistently high-speed stirred 3min, solution colour it are slowly added to Sepia is slowly become, it means that the generation of PbS quantum from light yellow, orange-yellow;
4) by above-mentioned gained mixed solution, after room temperature cooling, through centrifugal treating, use deionized water, dehydrated alcohol each clearly successively Wash three times, the vulcanized lead obtained is stored in dehydrated alcohol.
Embodiment 3
1) cetyl trimethylammonium bromide 29.12 mg (0.08 mmol), sodium lauryl sulphate 34.56 are weighed respectively Mg (0.12 mmol), sodium citrate 58.8 mg (0.2 mmol), join in the beaker that 300mL water temperature is 70 DEG C, continues High-speed stirred 3 ~ 5 min is allowed to be completely dissolved;
2) add few drops dilute nitric acid solution in above-mentioned mixed solution, and with pH meter regulation pH value to 5, be subsequently adding 80 ml 0.05 Mol/L thiourea solution persistently high-speed stirred 2 min;
3) lead acetate solution that 160 mL concentration are 0.025 mol/L persistently high-speed stirred 3min, solution colour it are slowly added to Sepia is slowly become, it means that the generation of PbS quantum from light yellow, orange-yellow;
4) by above-mentioned gained mixed solution, after room temperature cooling, through centrifugal treating, use deionized water, dehydrated alcohol each clearly successively Wash three times, the vulcanized lead obtained is stored in dehydrated alcohol.
It should be appreciated that for those of ordinary skills, can be improved according to the above description or be converted, And all these modifications and variations all should belong to the protection domain of claims of the present invention.

Claims (8)

1. the preparation method of a vulcanized lead quantum dot, it is characterised in that comprise the steps:
A, according to material amount prepare auxiliary agent: cetyl trimethylammonium bromide 20 ~ 30 parts, sodium lauryl sulphate 20 ~ 30 Part, sodium citrate 40 ~ 60 parts;
B, by above-mentioned mixed aid addition bath temperature be in 50 DEG C ~ 70 DEG C deionized waters, continue high-speed stirred 3 ~ 5 min be allowed to It is completely dissolved, is configured to mixed solution;
C, add few drops dilute nitric acid solution in above-mentioned mixed solution, pH value is adjusted to 3 ~ 5, in this solution, then adds Fructus Citri Limoniae Acid sodium, the amount of sodium citrate material is 2 ~ 4 times of lead acetate, and solution continues high-speed stirred 1 ~ 2 min, until becoming light yellow molten Liquid;
D, continuing to be slowly added to sodium citrate, the amount of sodium citrate material is 2 ~ 4 times of thiourea, and solution continues high-speed stirred 3 ~ 5 Min, solution colour is slowly become sepia from orange-yellow;
E, by above-mentioned gained mixed solution, after room temperature cooling, through centrifugal treating, each clearly with deionized water, dehydrated alcohol successively Wash three times, the vulcanized lead obtained is stored in dehydrated alcohol.
The preparation method of vulcanized lead quantum dot the most according to claim 1, it is characterised in that the material of described sodium citrate The amount sum that amount is cetyl trimethylammonium bromide, both sodium lauryl sulphates material.
The preparation method of vulcanized lead quantum dot the most according to claim 1, it is characterised in that described lead acetate solution and sulfur The amount of urea solution contained substance is equal.
The preparation method of vulcanized lead quantum dot the most according to claim 1, it is characterised in that the vulcanized lead quantum prepared The diameter dimension of point is 3 ~ 5 nm.
The preparation method of vulcanized lead quantum dot the most according to claim 1, it is characterised in that described auxiliary agent is with the amount of material Meter: cetyl trimethylammonium bromide 25 parts, sodium lauryl sulphate 25 parts, sodium citrate 50 parts.
The preparation method of vulcanized lead quantum dot the most according to claim 1, it is characterised in that described lead acetate solution and sulfur The amount of urea solution contained substance is all the amount 2.5 times of sodium citrate material.
The preparation method of vulcanized lead quantum dot the most according to claim 1, it is characterised in that add that from thiourea solution Time at quarter is counted, and after reactant has added, the time controlled at 3 ~ 5 minutes.
The preparation method of vulcanized lead quantum dot the most according to claim 1, it is characterised in that by above-mentioned in described step b It is in 60 DEG C of deionized waters that mixed aid adds bath temperature.
CN201610465936.0A 2016-06-24 2016-06-24 A kind of preparation method of vulcanized lead quantum dot Expired - Fee Related CN106129142B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106882837A (en) * 2017-03-01 2017-06-23 华中科技大学 A kind of method of control PbS or PbSe quantum dot sizes distribution

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070134902A1 (en) * 2005-12-12 2007-06-14 The Curators Of The University Of Missouri Patterning of Substrates with Metal-Containing Particles
CN101117237A (en) * 2007-07-17 2008-02-06 浙江大学 Method for preparing hexagon star-shaped plumbous sulfide nanocrystalline
CN104297306A (en) * 2014-09-30 2015-01-21 江南大学 Multifunctional photoelectrochemical sensor based on G-tetrahedron/hemin
CN105304338A (en) * 2015-09-21 2016-02-03 河南师范大学 Counter electrode for quantum-dot sensitized solar cell and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070134902A1 (en) * 2005-12-12 2007-06-14 The Curators Of The University Of Missouri Patterning of Substrates with Metal-Containing Particles
CN101117237A (en) * 2007-07-17 2008-02-06 浙江大学 Method for preparing hexagon star-shaped plumbous sulfide nanocrystalline
CN104297306A (en) * 2014-09-30 2015-01-21 江南大学 Multifunctional photoelectrochemical sensor based on G-tetrahedron/hemin
CN105304338A (en) * 2015-09-21 2016-02-03 河南师范大学 Counter electrode for quantum-dot sensitized solar cell and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106882837A (en) * 2017-03-01 2017-06-23 华中科技大学 A kind of method of control PbS or PbSe quantum dot sizes distribution
CN106882837B (en) * 2017-03-01 2018-09-21 华中科技大学 A method of control PbS or PbSe quantum dot sizes distribution

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