CN106128495A - A kind of disposal programmable device and programming realization method - Google Patents
A kind of disposal programmable device and programming realization method Download PDFInfo
- Publication number
- CN106128495A CN106128495A CN201610428911.3A CN201610428911A CN106128495A CN 106128495 A CN106128495 A CN 106128495A CN 201610428911 A CN201610428911 A CN 201610428911A CN 106128495 A CN106128495 A CN 106128495A
- Authority
- CN
- China
- Prior art keywords
- layer
- programmable device
- switch pipe
- mos switch
- mtj
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/146—Write once memory, i.e. allowing changing of memory content by writing additional bits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
Abstract
The present invention relates to a kind of disposal programmable device and programming realization method, including switch metal-oxide-semiconductor, MTJ and fixed potential, the present invention is by the optimization to tradition OTP structure, switching tube source electrode is directly grounded, in the case of normal working voltage, reach to increase MTJ both end voltage, thus reach once to punch the effect of barrier layer, one-time programming.This method reducing the breakdown voltage needed for conventional circuit structure, compare tradition OTP structure, simple in construction, area occupied is little, it is simple to designs, produce and operates, and the power consumption being possible not only to reduce one-time programming also can save manufacturing cost.
Description
Technical field
The present invention relates to IC manufacturing field, particularly relate to a kind of disposal programmable device and programming realization side
Method.
Background technology
OTP (one time programmable, disposable programmable device) is common a kind of NVM (non-volatile memories
Device), one-off programming is irreversible in programming process, only allows to write once.STT-MRAM is a kind of non-volatile memorizer,
Its storage organization uses MTJ MTJ, and middle is referred to as barrier layer, is free layer and reference layer up and down.
One-off programming for MTJ (MTJ) generally uses the mode added high pressure to puncture barrier layer, Ji Chuanhou
Barrier layer show as Low ESR (about 100 ohms).The breakdown voltage of barrier layer is higher than common program voltage, and
Owing to switching tube exists conducting resistance, the voltage of outside is caused must effectively to puncture the barrier layer of MTJ by sufficiently high guarantee, this
Planting traditional mode and generally require extra high input voltage structure, not only design circuit structure is complicated, too increases one-time programming
Power consumption.
Summary of the invention
The present invention is to overcome above-mentioned weak point, it is therefore intended that provides a kind of disposal programmable device, mainly includes
Including MOS switch pipe, MTJ, area occupied is little, simple in construction, it is easy to accomplish.
Another object of the present invention is to provide a kind of programming realization method of disposal programmable device, and this method will switch
Tube source grade is directly grounded current potential, in the case of normal working voltage, reaches to increase MTJ both end voltage, thus reaches
Once punch the effect of barrier layer, one-time programming；This method reduce the breakdown voltage needed for conventional circuit structure, reduce one
The power consumption of secondary programming.
The present invention is to reach above-mentioned purpose by the following technical programs: a kind of disposal programmable device, including: MOS opens
Guan Guan, MTJ, wordline, bit line, sensitive amplifier circuit, potential generator；MOS switch pipe respectively with magnetic tunnel
Knot, wordline, potential generator connect；MTJ is connected with sensitive amplifier circuit by bit line.
As preferably, described MTJ includes free layer, barrier layer, reference layer；Barrier layer is clipped in free layer and ginseng
Examine between layer.
As preferably, the free layer of described MTJ is connected with the drain electrode of MOS switch pipe；Reference layer is connected with bit line.
As preferably, the grid of described MOS switch pipe is connected with wordline；The source electrode of MOS switch pipe and potential generator
It is connected.
As preferably, the current potential that described potential generator produces is fixing earthing potential.
As preferably, two of described MTJ is also with top layer metallic layer and bottom metal layer, and free layer connects
It is connected with the drain electrode of MOS switch pipe after top layer metallic layer；Reference layer is connected with bit line after being connected to bottom metal layer.
As preferably, described free layer is connected with the drain electrode of MOS switch pipe after being connected to bottom metal layer；Reference layer is connected to
It is connected with bit line after top layer metallic layer.
A kind of programming realization method of disposal programmable device, applies earthing potential to MOS switch pipe source electrode, in wordline
The common program voltage of upper applying, applies voltage on bit line, keeps wordline and bit-line voltage constant until the gesture of MTJ
Barrier layer punctures, and completes programming.
The beneficial effects of the present invention is: 1) present invention reach in the case of normal working voltage increase MTJ
Both end voltage, can reach the effect once punching barrier layer, one-time programming；2) needed for present invention reduces conventional circuit structure
Breakdown voltage；3) device area occupied of the present invention is little, it is easy to accomplish, simple to operate, it is possible not only to reduce the power consumption of one-time programming
Also manufacturing cost can be saved.
Accompanying drawing explanation
Fig. 1 is the basic structure schematic diagram of one-off programming device of the present invention；
Fig. 2 is the part-structure schematic diagram of one-off programming device of the present invention；
Fig. 3 is the schematic flow sheet of programming realization method of the present invention.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described further, but protection scope of the present invention is not limited in
This:
Embodiment: as it is shown in figure 1, a kind of disposal programmable device is by MOS switch pipe, MTJ, wordline, position
Line, sensitive amplifier circuit, potential generator form.MTJ includes free layer, barrier layer, reference layer；Barrier layer
It is clipped between free layer and reference layer, as shown in Figure 2.Wherein, the point of the A in Fig. 1 drains for MOS switch pipe；MTJ
Free layer is connected with the drain electrode of MOS switch pipe；The reference layer of MTJ is connected with bit line.The grid of MOS switch pipe and wordline
It is connected；The source electrode of MOS switch pipe is connected with potential generator.The current potential that described potential generator produces is fixing ground connection
Current potential.
Two of MTJ also includes top layer metallic layer and bottom metal layer, and free layer is connected to top layer metallic layer
It is connected with the drain electrode of MOS switch pipe afterwards；Reference layer is connected with bit line after being connected to bottom metal layer.It addition, annexation can also
It is to be connected with the drain electrode of MOS switch pipe after free layer is connected to bottom metal layer；Reference layer be connected to after top layer metallic layer with bit line
It is connected.
As it is shown on figure 3, a kind of programming realization method of disposal programmable device, MOS switch pipe source electrode is applied ground connection
Current potential, applies common program voltage in wordline, applies voltage on bit line, within a period of time, keeps wordline and bit line electricity
Press constant until the barrier layer of MTJ punctures, complete programming.
The one-off programming device of the present invention can be integrated into mobile phone, computer, embedded chip, automotive electronics chip, independent
In formula memorizer, handheld device, radio-frequency (RF) tag.
It is the specific embodiment of the present invention and the know-why used described in Yi Shang, if conception under this invention institute
Make change, function produced by it still without departing from description and accompanying drawing contained spiritual time, must belong to the present invention's
Protection domain.
Claims (8)
1. a disposal programmable device, it is characterised in that including: MOS switch pipe, MTJ, wordline, bit line, sensitive
Amplifier circuit, potential generator；MOS switch pipe is connected with MTJ, wordline, potential generator respectively；Magnetic
Tunnel knot is connected with sensitive amplifier circuit by bit line.
A kind of disposal programmable device the most according to claim 1, it is characterised in that: described MTJ includes certainly
By layer, barrier layer, reference layer；Barrier layer is clipped between free layer and reference layer.
A kind of disposal programmable device the most according to claim 2, it is characterised in that: the freedom of described MTJ
Layer is connected with the drain electrode of MOS switch pipe；Reference layer is connected with bit line.
A kind of disposal programmable device the most according to claim 1, it is characterised in that: the grid of described MOS switch pipe
It is connected with wordline；The source electrode of MOS switch pipe is connected with potential generator.
A kind of disposal programmable device the most according to claim 1, it is characterised in that: described potential generator produces
Current potential be fixing earthing potential.
A kind of disposal programmable device the most according to claim 3, it is characterised in that: two of described MTJ
Also with top layer metallic layer and bottom metal layer, free layer is connected with the drain electrode of MOS switch pipe after being connected to top layer metallic layer；Reference
Layer is connected with bit line after being connected to bottom metal layer.
A kind of disposal programmable device the most according to claim 6, it is characterised in that: described free layer is connected to bottom
It is connected with the drain electrode of MOS switch pipe after metal level；Reference layer is connected with bit line after being connected to top layer metallic layer.
8. the programming realization method of a disposal programmable device, it is characterised in that: MOS switch pipe source electrode is applied ground connection electricity
Position, applies common program voltage in wordline, applies voltage on bit line, keeps wordline and bit-line voltage constant until magnetic tunnel
The barrier layer of road knot punctures, and completes programming.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610428911.3A CN106128495A (en) | 2016-06-16 | 2016-06-16 | A kind of disposal programmable device and programming realization method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610428911.3A CN106128495A (en) | 2016-06-16 | 2016-06-16 | A kind of disposal programmable device and programming realization method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106128495A true CN106128495A (en) | 2016-11-16 |
Family
ID=57469537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610428911.3A Pending CN106128495A (en) | 2016-06-16 | 2016-06-16 | A kind of disposal programmable device and programming realization method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106128495A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111696601A (en) * | 2020-06-10 | 2020-09-22 | 苏州思立特尔半导体科技有限公司 | Bit structure based on magnetic tunnel junction |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104620320A (en) * | 2012-09-13 | 2015-05-13 | 高通股份有限公司 | OTP cell with reversed MTJ connection |
| CN104620319A (en) * | 2012-09-13 | 2015-05-13 | 高通股份有限公司 | Otp scheme with multiple magnetic tunnel junction devices in a cell |
-
2016
- 2016-06-16 CN CN201610428911.3A patent/CN106128495A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104620320A (en) * | 2012-09-13 | 2015-05-13 | 高通股份有限公司 | OTP cell with reversed MTJ connection |
| CN104620319A (en) * | 2012-09-13 | 2015-05-13 | 高通股份有限公司 | Otp scheme with multiple magnetic tunnel junction devices in a cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111696601A (en) * | 2020-06-10 | 2020-09-22 | 苏州思立特尔半导体科技有限公司 | Bit structure based on magnetic tunnel junction |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161116 |