CN106118143A - Use the method that Graphene suppression conducting resinl is aging - Google Patents
Use the method that Graphene suppression conducting resinl is aging Download PDFInfo
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- CN106118143A CN106118143A CN201610469528.2A CN201610469528A CN106118143A CN 106118143 A CN106118143 A CN 106118143A CN 201610469528 A CN201610469528 A CN 201610469528A CN 106118143 A CN106118143 A CN 106118143A
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- Prior art keywords
- graphene
- conducting resinl
- aging
- suppression
- present
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53276—Conductive materials containing carbon, e.g. fullerenes
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- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Carbon And Carbon Compounds (AREA)
- Life Sciences & Earth Sciences (AREA)
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- Wood Science & Technology (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
The present invention relates to a kind of method using Graphene suppression conducting resinl aging.Graphene is applied the coating to conducting resinl and non-noble metal linkage interface by the method the method, as steam and air barrier, the electrochemical corrosion effect occurred with lowpriced metal surface with suppression conducting resinl, solves its integrity problem that contact resistance variation is the biggest before and after experience constant temperature and humidity degradation;Meanwhile, Graphene itself is the thinnest good conductive material, can guarantee that conducting resinl is electrically interconnected with metal pad.Graphene quantum dot CNT prepared by this method/carbon cloth three-dimension flexible electrode has high capacitance performance, and electric current density is 0.5mA/cm2Time, the face amount of three-diemsnional electrode may be up to 842mF/cm2.Functional amido graphene quantum dot/CNT/carbon cloth three-dimension flexible the electrode of high capacitance performance that prepared by the present invention have shows tempting application prospect in new forms of energy nano-device technical field.
Description
Technical field
The present invention relates to a kind of use the Graphene suppression aging method of conducting resinl, with solve constant temperature and humidity (@85 DEG C/
85RH) under environment, when conducting resinl contacts with base metal, contact resistance instability problem.
Background technology
Since new century, the developing rapidly of science and technology brings people and lives great convenience, especially electron trade,
New material, new technology, new technique development under, also obtain the progress maked rapid progress.In the last few years, microelectronic product was progressively
To multi-functional, high-performance, portable, low cost, the directions such as environment is user friendly are converted, and in traditional Electronic Packaging industry
The shortcoming that middle use tin-lead solder widely has exposed it: (1) is unfriendly to environment, human body and environment are deposited by heavy metal lead
In great bodily injury;(2) welding temperature is too high, is easily caused peripheral devices and damages;(3) linear resolution is the lowest, be difficult to miniaturization,
Densification direction is developed.Conducting resinl (electrically conductive adhesive) is that one has conduction and glues
The extraordinary adhesive of connection function, has electric conductivity after solidification, have the one of adhesive property for connect conductive material or device
The conductivity type polymer composite that class is special.As a kind of novel conductive composite, overcome tradition with the performance that it is excellent
The shortcoming of tin-lead solder, is widely used in Electronic Packaging field.But the big key restricting its development is exactly
Conducting resinl itself can increase in the middle of degradation rapidly with the contact resistance of base metal mating surface, especially permanent at constant temperature
Under wet working condition.
It is generally believed that the phenomenon of conducting resinl contact resistance instability is mainly by conducting resinl and base metal contact interface
Between electrochemical corrosion cause.Corrosion process can generate nonconducting metal-oxide, directly show in result of the test
Be exactly being gradually increased of contact resistance.The standard that American National manufacturing science center is formulated specifies, replaces as tin-lead solder
The conducting resinl of Dai Pin, its contact resistance requires as in 85 DEG C/85% relative humidity (RH), after aging 500 hours, its increase can not
More than 20%, and conducting resinl is all not up to this standard in base metal is applied at present.In recent years, the research one to Graphene
Directly it is in burning hot state, in addition to the report high intensity of Graphene, high rigidity, high thermal conductivity and high light transmittance, graphite
The impervioursness of alkene itself enters into research focus the most day by day, due to the exclusive feature of itself structure, and major part at normal temperatures
Molecule all cannot pass through its surface, may act as the protective layer of metal with anticorrosion, abroad some mechanisms research report stone
Ink alkene has certain effect in terms of preventing ferrum and copper corrosion.
Summary of the invention
It is an object of the invention to provide a kind of method using Graphene suppression conducting resinl aging.The method is by Graphene
Apply the coating to conducting resinl and non-noble metal linkage interface, as steam and air barrier, to suppress conducting resinl and low-priced gold
The electrochemical corrosion effect that metal surface occurs, solves its contact resistance variation before and after experience constant temperature and humidity degradation the biggest
Integrity problem;Meanwhile, Graphene itself is the thinnest good conductive material, can guarantee that conducting resinl is electrically interconnected with metal pad.
For achieving the above object, the present invention adopts the following technical scheme that
A kind of method using Graphene suppression conducting resinl aging, it is characterised in that concretely comprising the following steps of the method: by Graphene
Dispersion liquid in water, makes coating solution, and concentration range is 0.001mg/ml to 0.1mg/ml;Then Graphene coating is coated with
Above the pad that microelectronics Packaging needs connection, then in pad upper point adhesive curing.
The material of above-mentioned pad is: noble metal or basic material.
The technology of the present invention is firstly the need of obtaining Graphene coating, and this Graphene can be by mechanically pulling off method, solvent is peeled off
The method such as method, chemical gaseous phase depositing process obtains, and then makes coating solution;Then Graphene coating is applied to microelectronics Packaging
Needing above the pad of connection, this bonding pad material can be noble metal or basic material, such as copper, nickel, ferrum, zinc etc.;Secondly,
At pad upper point glue, resolidification, contact resistance when record is stablized after solidification;Again a glue sample is positioned over 85oC/85%RH
Climatic chamber, tests 500-600 hour, and gathers sample contacts resistance every 24 hours.
The sample of the technology of the present invention is after 500-600 hour tests, and contact resistance can keep stable, and contact resistance fluctuates
Less than 20%, meet in the standard that American National manufacturing science center is formulated and specify.
Accompanying drawing explanation
Fig. 1 is the pcb board exemplary plot laying copper conductor used in embodiment one.
Fig. 2 is the sampling figure prepared before degradation of the present invention.
Fig. 3 is the test effect contrast figure of sample contact resistance in case study on implementation of the present invention.
Fig. 4 is the effect contrast figure of sample contact resistance variation rate in case study on implementation of the present invention.
Detailed description of the invention
It is embodied as being described further to the present invention below in conjunction with example, but the enforcement of the present invention and protection domain are not
It is limited to this.
Embodiment one: in the present embodiment, sees Fig. 1, a kind of close beta device pcb board, lays copper conductor above
And having 1mm gap between wire for dripping graphene solution and conducting resinl, the copper square of right-hand member does welding metal lead wire and uses;
Fig. 2 is the sample drawing that in the middle of whole experiment, all process implementings are complete.Concrete processing step is:
(1) get out the pcb board laying copper conductor 6 of experiment, clean pcb board some times with dilute hydrochloric acid, at room temperature
Under dry, be that 1mg/L graphene solution is diluted to 0.01mg/L by concentration;
(2) half in above-mentioned pcb board is placed on the heated at constant temperature platform of 30 ~ 40 DEG C sets in order, drip dense with glue head dropper
Degree 0.01mg/L graphene solution in the middle of the copper conductor gap laid in pcb board, the good graphene solution of each clearance control
Amount, we control one, each gap here, and all gaps treat that it is in the heated at constant temperature platform of 38 degrees Celsius after dripping off one time
It is dried;
Etc. (3), after the graphene solution moisture evaporation on gap, repeat drip graphene solution and be dried this process, here I
Control to be repeated four times, the most each gap drips four graphene solutions altogether;
(4) pcb board dripping graphene solution in (3) and the midpoint, gap not dripped on the pcb board of graphene solution
Glue, keeps the conducting resinl amount in each gap roughly the same under the assistance of point gum machine as far as possible, puts into 150 DEG C dry the most simultaneously
Dry case solidifies one hour;
(5) sample being cured, after it cools down, in the two ends welded wire of copper conductor so that testing contact resistance, will do
6 good samples are positioned under room temperature after standing 24 hours the contact resistance numerical value recorded before degradation experiment starts.Ginseng
See Fig. 3.
(6) 6 samples are finally carried out labelling put in the climatic chamber of 85 DEG C/85% relative humidity (RH) simultaneously
The row degradation of 500 hours, every the contact resistance value of 24 hour records once each sample.See Fig. 4.
Above in conjunction with accompanying drawing, the embodiment of the present invention is illustrated, but the invention is not restricted to above-described embodiment, it is also possible to
The purpose of the innovation and creation according to the present invention makes multiple change, under all spirit according to technical solution of the present invention and principle
The change made, modifying, substitute, combine, simplify, all should be the substitute mode of equivalence, as long as meeting the goal of the invention of the present invention, only
To improve know-why and the inventive concept of conducting resinl reliability method under double 85 environment without departing substantially from the present invention, broadly fall into this
Bright protection domain.
Claims (4)
1. one kind is used the method that Graphene suppression conducting resinl is aging, it is characterised in that concretely comprising the following steps of the method: will obtain
Graphene dispersing solution, make the coating solution that concentration is 0.001mg/ml~0.1mg/ml;Then Graphene coating is applied to
Microelectronics Packaging needs above the pad of connection, then in pad upper point adhesive curing.
Method the most according to claim 1, it is characterised in that described graphene preparation method is: micromechanics stripping means
Or oxide-reduction method, or chemical gaseous phase depositing process etc..
Method the most according to claim 1, it is characterised in that described graphene dispersing solution solvent is: water or ethanol etc.
Organic solvent.
Method the most according to claim 1, it is characterised in that the material of described pad is: noble metal or base metal material
Material.
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CN201610469528.2A CN106118143B (en) | 2016-06-25 | 2016-06-25 | Inhibit the method for conducting resinl aging with graphene |
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CN201610469528.2A CN106118143B (en) | 2016-06-25 | 2016-06-25 | Inhibit the method for conducting resinl aging with graphene |
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CN106118143A true CN106118143A (en) | 2016-11-16 |
CN106118143B CN106118143B (en) | 2018-10-23 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108075129A (en) * | 2017-11-29 | 2018-05-25 | 合肥国轩高科动力能源有限公司 | A kind of silicon based anode material is with quantum dot oil system coating copper foil and preparation method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104177895A (en) * | 2014-07-30 | 2014-12-03 | 重庆领先新材料有限公司 | Graphene or graphite oxide-based anticorrosive coating and preparation method thereof |
CN104194664A (en) * | 2014-08-22 | 2014-12-10 | 桐城信邦电子有限公司 | Conductive tape |
CN104877616A (en) * | 2015-05-15 | 2015-09-02 | 成都纳硕科技有限公司 | Ultraviolet curable conductive adhesive used for PCB (printed circuit board) |
-
2016
- 2016-06-25 CN CN201610469528.2A patent/CN106118143B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104177895A (en) * | 2014-07-30 | 2014-12-03 | 重庆领先新材料有限公司 | Graphene or graphite oxide-based anticorrosive coating and preparation method thereof |
CN104194664A (en) * | 2014-08-22 | 2014-12-10 | 桐城信邦电子有限公司 | Conductive tape |
CN104877616A (en) * | 2015-05-15 | 2015-09-02 | 成都纳硕科技有限公司 | Ultraviolet curable conductive adhesive used for PCB (printed circuit board) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108075129A (en) * | 2017-11-29 | 2018-05-25 | 合肥国轩高科动力能源有限公司 | A kind of silicon based anode material is with quantum dot oil system coating copper foil and preparation method thereof |
CN108075129B (en) * | 2017-11-29 | 2020-12-04 | 合肥国轩高科动力能源有限公司 | Quantum dot oil system coating copper foil for silicon-based negative electrode material and preparation method thereof |
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CN106118143B (en) | 2018-10-23 |
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