CN106104781B - Oxide semiconductor evaluating apparatus and this method - Google Patents
Oxide semiconductor evaluating apparatus and this method Download PDFInfo
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- CN106104781B CN106104781B CN201580013083.0A CN201580013083A CN106104781B CN 106104781 B CN106104781 B CN 106104781B CN 201580013083 A CN201580013083 A CN 201580013083A CN 106104781 B CN106104781 B CN 106104781B
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Abstract
In oxide semiconductor evaluating apparatus of the invention and this method, for the oxide semiconductor of evaluation object, the light and defined measurement wave of provision wavelengths are irradiated, measures the back wave of the measurement wave reflected by the oxide semiconductor.In addition, measuring the thickness of the oxide semiconductor.Then, the thickness based on the oxide semiconductor measured, corrects the intensity of the back wave.Therefore, oxide semiconductor evaluating apparatus and this method evaluate the mobility of the oxide semiconductor and further considering the thickness of the oxide semiconductor, therefore can more precisely evaluate the mobility of the oxide semiconductor.
Description
Technical field
The present invention relates to the oxide semiconductor evaluating apparatus for the mobility that can evaluate to relativity oxide semiconductor
With oxide semiconductor evaluation method.
Background technique
Oxide semiconductor containing indium (In), gallium (Ga), zinc (Zn), tin (Sn) etc. has field-effect mobility (migration
Rate) high excellent characteristic of semiconductor.Therefore, oxide semiconductor is suitable for the driving element etc. of active array display unit
It is studied.In particular, oxide semiconductor can be with film formation at low temp, and optical band gap is big, therefore can be in plastic base
With the upper film forming such as film substrate, also studied using the flexible display of this substrate and transparent display etc. as a result,.
In the application of such oxide semiconductor, need to change the group of the composition of oxide semiconductor according to its specification
Conjunction and content etc., but when studying optimal combination, need to check the electricity of carrier lifetime (carrier lifetime) and mobility etc.
Characteristic.
Therefore, in order to acquire the electrical characteristics of such oxide semiconductor, in patent document 1, based on the invention person
Cognition below proposes the evaluation side for having a kind of oxide semiconductor thin-film using Microwave Photoconductive Decay method (μ-PCD method)
Method.
The inventors of the patent document 1 have found that the mobility and life value of (one) oxide semiconductor thin-film exist
The incidence relation of height；(2) there are the incidence relations of height for the peak value of the mobility of oxide semiconductor thin-film and reflectivity.
Then, the inventors of the patent document 1 propose a kind of evaluation method of oxide semiconductor thin-film, are to being formed with
The sample irradiation exciting light and microwave of oxide semiconductor thin-film, measure the microwave changed by the irradiation of the exciting light
The back wave from the oxide semiconductor thin-film maximum value after, stop the irradiation of the exciting light, measure and described swash
The variation of the reflectivity of the back wave from the oxide semiconductor thin-film of the microwave after luminous irradiation stopping, root
According to the value mathematic(al) expectation value measured, the method for the mobility of the oxide semiconductor thin-film is thus determined.In addition, institute
The inventors for stating patent document 1 propose a kind of evaluation method of oxide semiconductor thin-film, are by aerobic to being formed
The sample irradiation exciting light and microwave of compound semiconductive thin film, measure the microwave changed by the irradiation of the exciting light
The maximum value of back wave from the oxide semiconductor thin-film determines the mobility of the oxide semiconductor thin-film accordingly
Evaluation method.
In addition, being oxidized the absorption of object semiconductive thin film due to the exciting light being irradiated on oxide semiconductor thin-film sample
And excess carriers (excitation carrier) is generated, excess carrier density increases, and its disappearance speed increases, carrier injection
When speed and equal disappearance speed, excess carrier density reaches certain peak value.Then, if the generation of the excess carriers and
The speed of elimination is equal, is saturated and maintains certain value, if but stop exciting light irradiation, due to answering for excess carriers
It closes, eliminate, excess carriers is caused to reduce, it is known that the value before eventually returning exciting light irradiation.μ-PCD the method is to be based on
Such phenomenon and the method for acquiring carrier lifetime.
But the present application person makes the thickness of oxide semiconductor carry out various change and comment using to μ-PCD method
When valence oxide semiconductor, it is noted that the peak value of the reflectivity of microwave depends on the thickness of oxide semiconductor.Therefore, described special
The evaluation method of oxide semiconductor thin-film disclosed in sharp document 1 can partly be led in the mutually the same multiple oxides of thickness
It is evaluated between body, in the evaluation method of the oxide semiconductor thin-film disclosed in patent document 1, is considering that it is thick
On this point of degree, there are rooms for improvement.
Existing advanced technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2012-33857 bulletin
Summary of the invention
The present invention invents in view of the above circumstances, it is intended that provide a kind of oxide semiconductor evaluating apparatus and
Oxide semiconductor evaluation method by further considering the thickness of oxide semiconductor, and can be evaluated more precisely
The mobility of the oxide semiconductor.
In oxide semiconductor evaluating apparatus and oxide semiconductor evaluation method of the invention, for evaluation object
Oxide semiconductor, irradiates the light and defined measurement wave of provision wavelengths, described in measurement is reflected as the oxide semiconductor
Measure the back wave of wave.In addition, measuring the thickness of the oxide semiconductor.Then, based on the oxide measured
The thickness of semiconductor corrects the intensity of the back wave.Therefore, oxide semiconductor evaluating apparatus of the invention and oxide half
Conductor evaluation method evaluates the oxide semiconductor by further considering the thickness of the oxide semiconductor accordingly
Mobility, so the mobility of the oxide semiconductor can be evaluated more precisely.
Above-mentioned and other purpose of the present invention, feature and it is excellent benefit point from detailed below description and attached drawing face.
Detailed description of the invention
Fig. 1 is the figure for indicating the composition of oxide semiconductor evaluating apparatus of embodiment.
Fig. 2 is the flow chart for indicating the work of oxide semiconductor evaluating apparatus of embodiment.
Fig. 3 is the figure for indicating the time change of reflectivity of oxide semiconductor.
Fig. 4 is the figure for indicating the relationship of mobility and peak value (correction peak value) when considering the thickness of oxide semiconductor.
Fig. 5 is the figure of the thickness for indicating each sample of oxide semiconductor and the relationship of mobility.
Fig. 6 is the figure for indicating the relationship of mobility and peak value when not considering the thickness of oxide semiconductor.
Specific embodiment
Hereinafter, being based on Detailed description of the invention an embodiment of the invention.In addition, adding the structure of identical symbol in the various figures
At, be expressed as identical composition, be suitable for the description thereof will be omitted.In the present specification, it in the case where general designation, is subscripted with being omitted
Reference marks indicates, when giving directions single composition, is indicated with the additional reference marks subscripted.
Fig. 1 is the figure for indicating the composition of oxide semiconductor evaluating apparatus of embodiment.The oxide of present embodiment
Semiconductor evaluating apparatus is moving for the oxide semiconductor for utilizing Microwave Photoconductive Decay method (μ-PCD method) for evaluation object
The device that shifting rate is evaluated when evaluating the mobility, considers the thickness of the oxide semiconductor.About such implementation
The oxide semiconductor evaluating apparatus D of mode, for example, as shown in Figure 1, having light source portion 1, measurement wave irradiation portion 2, back wave survey
Amount portion 3, thickness measure portion 4, control processing unit 5 are also equipped with input unit 6, output section 7, interface portion in the example depicted in figure 1
(portion IF) 8, storage unit 9, segmentation controller 10, mobile microscope carrier 11.
Light source portion 1 is connect with control processing unit 5, is the control for following control processing unit 5, the illumination of provision wavelengths is mapped to
Device on the oxide semiconductor SP of evaluation object, is equivalent to an example of illumination part.Light source portion 1, such as be also possible to have
Standby lamp and the light supply apparatus of wavelength filter etc., but in the present embodiment, bigger output power can be obtained by having
, with pulse type issue laser laser source device and constituted.The provision wavelengths in light source portion 1, for example, to have evaluation pair
The mode of the energy more than band gap of the oxide semiconductor of elephant is suitable for according to the type of the oxide semiconductor of evaluation object
Selection.For example, oxide semiconductor SP is made of indium, gallium, zinc and oxygen as amorphous semiconductor
When IZSO, the wavelength in light source portion 1, such as preferably 349nm.
The oxide semiconductor SP of evaluation object, the oxide semiconductor being formed on the substrate such as glass substrate
Film.Oxide semiconductor, for example, combination containing selected from the group that In, Ga, Zn and Sn are constituted it is at least one with
On, more specifically, for example, can enumerate In oxide, In-Sn oxide, In-Zn oxide, InSn-Zn oxide,
In-Ga oxide, Zn-Ga oxide, In-Ga-Zn oxide, Zn oxide are above-mentioned IZSO in its an example.
Measurement wave irradiation portion 2 is connected to control processing unit 5, is the control for following control processing unit 5, to oxide semiconductor
The device of measurement wave as defined in SP irradiation.More specifically, wave irradiation portion 2 is measured, as shown in Figure 1, having measurement wave generating unit
21, circulator 22, the waveguide 23 (23-1~23-3) containing radiating guide.
Waveguide 23 is the component to form the propagation path that conduction measurement involves its back wave, in the present embodiment, tool
Standby 1st to the 3rd waveguide 23-1~23-3.In the present embodiment, since measurement wave is microwave, so waveguide 23 is micro-
Sonic wave guide pipe.
Measurement wave generating unit 21 is connected to control processing unit 5, is to follow the control of control processing unit 5 and generate defined survey
Measure the device of wave.Wave is measured as defined in described, is electromagnetic wave, but in the oxide semiconductor evaluating apparatus of present embodiment
In D, because the defined measurement wave is microwave using μ-PCD method, wave generating unit 21 is measured, for example, having use
The Gunn diode of frequency 26GHz etc., generate the microwave oscillator of microwave and constitute.Wave generating unit 21 is measured, via the 1st
Waveguide 23-1 and 1 terminal for being connected to circulator 22, the measurement wave radiated from measurement wave generating unit 21, via the 1st waveguide
Pipe 23-1 and be incident on circulator 22.
Circulator 22 possesses 3 or more terminals (port), irreversibly by the input of a terminal cyclically to other
Terminal output, be to have 3 the 1st terminals to the 3rd terminal in the present embodiment, the measurement wave of incident 1st terminal penetrated
Out to the 2nd terminal, the measurement wave of incident 2nd terminal is injected to the optical element of the 3rd terminal.1st terminal of circulator 22, warp
Connect by the 1st waveguide 23-1 with measurement wave generating unit 21, the 2nd terminal, with also functioned as radiating guide the
2 waveguide 23-2 connections, then, the 3rd terminal is connected to back wave test section 3 via the 3rd waveguide 23-3.
2nd waveguide 23-2 is also functioned as radiating guide, and the oxide for measuring wave direction evaluation object is partly led
Body SP radiation, and receive by the back wave of the oxide semiconductor SP measurement wave reflected.The one of 2nd waveguide 23-2
End, connect Ru above-mentioned with the 2nd terminal of circulator 22, and the other end is with nearly 90 degree bendings and along the oxide semiconductor SP's
Normal direction is arranged, and in its front end, is formed with the opening portion 231 of opening.The measurement wave is from the opening portion 231 by emitting to
Oxide semiconductor SP is stated, by the back wave of the oxide semiconductor SP measurement wave reflected, is connect in the opening portion 231
It receives.Then, it described in the 2nd waveguide 23-2 with nearly 90 degree of curved buckling portions, is formed with for that will be radiated from light source portion 1
Light be directed to the opening portion 232 of the opening in the 2nd waveguide 23-2.
In addition, can also intervene setting on the 2nd waveguide 23-2 and adjust the magnetic field of measurement wave and the E-H tune of electric field
Humorous device, so that can be better by back wave test section 3 by the back wave of the oxide semiconductor SP measurement wave reflected
Ground measurement.
Echo measurement portion 3 is connected to control processing unit 5, is to follow the control of control processing unit 5 and measure by the oxygen
The device of the back wave for the measurement wave that compound semiconductor SP is reflected.In the present embodiment, since measurement wave is microwave,
So back wave test section 3 has microwave detector and constitutes, the intensity of back wave is measured, and acquires the reflectivity of back wave.
Back wave test section 3 exports the reflectivity of the back wave acquired to control processing unit 5.In addition, echo measurement portion 3,
The intensity of back wave can be measured, and the intensity of the back wave of the measurement is exported to control processing unit 5, control processing unit 5 is asked
Obtain the reflectivity of back wave.
Thickness measure portion 4 is connected to control processing unit 5, is the control for following control processing unit 5, measures along by light source portion
The thickness device of the oxide semiconductor SP of evaluation object on this direction of the direction of travel of light of 1 irradiation.Thickness measure portion
4, for example, being the so-called film thickness gauge using spectral interference method.In addition for example, thickness measure portion 4, is that so-called light splitting is ellipse partially
Instrument.When having the film thickness gauge that the spectral interference method is utilized and constituting thickness measure portion 4, absorption coefficient is needed from input unit 6
When inputting the value of document etc., but having the light splitting ellipsometer and constitute thickness measure portion 4, light splitting ellipsometer can measure oxidation
The thickness of object semiconductor SP, and the extinction coefficient k of the oxide semiconductor SP can be further measured, absorption coefficient uses α
=4 π k/ λ are acquired.λ is the wavelength for the light released from light source portion 1.Extinction coefficient k is the measurement result for being divided ellipsometer, is from light
Value corresponding to the wavelength for the light that source portion 1 releases.It so, it is possible to save the effort for inputting absorption coefficient from input unit 6, acquire and comment
The absorption coefficient of valence object itself, therefore can more precisely the mobility self for evaluation object evaluate.Cause
This, more preferably has light splitting ellipsometer and constitutes thickness measure portion 4.
Input unit 6 is connected to control processing unit 6, is the control for following control processing unit 6, for example, input instruction oxide
The identifier of the oxide semiconductor SP of the various orders and such as evaluation object of the instruction that the evaluation of semiconductor SP starts etc.
Input, after the mobility evaluate absorption coefficient by the various data of needs be input to oxide semiconductor evaluate
The device of device D, for example, having multiple input switches, keyboard and the mouse etc. for being assigned defined function.Output section 7 is connected to
Processing unit 6 is controlled, is the control for following control processing unit 6, exports the instruction and data inputted by input unit 6, and by aoxidizing
The device of the evaluation of the mobility of object semiconductor evaluating apparatus D evaluation, such as have CRT monitor, LCD and organic el display etc.
Display device and the printing equipment of printer etc. etc..
Also it is possible to constitute Trackpad by input unit 6 and output section 7.When constituting the Trackpad, input unit 6 is, for example,
The operating position of detection resistance film mode and electrostatic capacity etc. and the location input device inputted, output section 7 is aobvious
Showing device.In the Trackpad, location input device is equipped on the display surface of display device, can show can input display dress
The candidate for one or more input contents set, if user touches the display position for showing the input content for wanting input, by
Location input device detects the position, be shown in display content on the position detected as the operation input content of user and
It is entered oxide semiconductor evaluating apparatus D.In such Trackpad, because user is easy intuitively to understand input operation,
So can provide maneuverable oxide semiconductor evaluating apparatus D for a user.
The portion IF 8 is connected to control processing unit 5, is the control for following control processing unit 5, between external equipment
The circuit for carrying out the input and output of data, for example, having the interface loop of the RS-232C as serial communication mode, using
Interface loop, progress IrDA (Infrared Data Asscoiation) specification of Bluetooth (registered trademark) specification etc.
The interface loop of infrared communication and the interface loop etc. for using USB (Universal Serial Bus) specification.
Storage unit 9 be connected to control processing unit 5, be follow control processing unit 5 control, store various regulated procedures and
The circuit of data as defined in various.In the various regulated procedures, for example, comprising for evaluating moving for oxide semiconductor
The control processing routine of the assessment process of shifting rate and the control program that each section is controlled according to its function etc..Such storage
Portion 9 has and for example non-waves as the ROM of non-volatile memory element (Read Only Memory) and as rewritable
The EEPROM (Electrically Erasable Programmable Read Only Memory) of the memory element of hair property
Deng.Moreover, storage unit 9, which contains, is stored in the so-called as control processing of data generated in the operation of the regulated procedure etc.
RAM (Random Access Memory) of the working storage in portion 5 etc..
Mobile microscope carrier 11 is connected to segmentation controller 10, is the control for following segmentation controller 10, with evaluation object
The device of the mobile oxide semiconductor SP in the orthogonal horizontal direction of the thickness direction of oxide semiconductor SP.Mobile microscope carrier
11, for example, being to have the objective table (mounting table) of the oxide semiconductor SP for loading evaluation object, and in order to make the load
Object platform is moved along the horizontal direction, and along including X-direction and the Y side orthogonal with the X-direction in the horizontal direction
To the mobile XY objective table of XY portion of moving mechanism etc..
Segmentation controller 10 is connected to control processing unit 5, follows the control of control processing unit 5, in order to measure evaluation pair
Multiple evaluation positions of the oxide semiconductor SP of elephant, and move the oxide semiconductor SP in the horizontal direction,
So control the movement of the portion of moving mechanism of mobile microscope carrier 11.
Each section that processing unit 5 distinguishes control oxide semiconductor evaluating apparatus D according to the function of its each section is controlled, is
Intensity based on the back wave measured by echo measurement portion 3 and the oxide measured by thickness measure portion 4
The thickness of semiconductor SP, the circuit of the mobility for evaluating the oxide semiconductor SP.Processing unit 5 is controlled, such as is had
CPU (Central Processing Unit) and its periphery circuit and constitute.In control processing unit 5, journey is handled by control
Sort run, control unit 51, acquisition unit 52, peak value operational part 53, correction unit 54 and evaluation section 55 are functionally constituted.
Control unit 51 is each portion of difference control oxide semiconductor evaluating apparatus D for the function according to each section
The component divided.
About acquisition unit 52, mobile microscope carrier 11 is controlled via segmentation controller 10, thus makes oxide semiconductor SP's
Each position is mutually aligned with the position in thickness measure portion 4 (measurement position) respectively, makes each of each position of oxide semiconductor SP
Thickness measures respectively in thickness measure portion 4, and each thickness of each position of oxide semiconductor SP is obtained from thickness measure portion 4
Degree.Acquisition unit 52 makes each position of measurement and its thickness be stored in storage unit 9 in correspondence with each other.Then, acquisition unit 52 via point
Paragraph controller 1 and control mobile microscope carrier 11, thus make each position of oxide semiconductor SP respectively with the 2nd waveguide 23-2's
The position (measurement position) of opening portion 232 is aligned, and light source portion 1 and measurement wave irradiation portion 2 is made to irradiate regulation light and measurement wave respectively,
Echo measurement portion 3 is set to measure the back wave of the measurement wave of each position of oxide semiconductor SP respectively, by echo measurement portion 3
The intensity of the back wave of the measurement wave of each position of oxide semiconductor SP is obtained (with the intensity change for the back wave that the time passes through
Change).Then, acquisition unit 52 makes each position of measurement correspond to each other and be stored in storage unit 9 with the intensity of its back wave.
About peak value operational part 53, respectively in each position of oxide semiconductor SP, stored according to storage unit 9 described in
The intensity of back wave or its reflectivity (that is, measured by echo measurement portion 3, the back wave that is obtained by acquisition unit 52 it is strong
Degree or its reflectivity), acquire the peak value of the reflectivity.
About correction unit 54, respectively in each position of oxide semiconductor SP, with the oxide half being stored in storage unit 9
The thickness (that is, being measured by thickness measure portion 4, by the thickness for the oxide semiconductor SP that acquisition unit 52 obtains) of conductor SP, correction
Thus the peak value acquired by peak value operational part 53 acquires correction peak value.More specifically, if the peak value is Pk, if oxide
When the absorption coefficient and thickness of semiconductor SP are respectively α and d, correction unit 54 acquires the correction peak value Pkc by following formula (1).
Pkc=Pk/ (1-exp (- α d)) ... (1)
About evaluation section 55, respectively at each position of oxide semiconductor SP, the correction peak corrected based on correction unit 54
Value evaluates the mobility of oxide semiconductor SP.In evaluation method, the method disclosed in patent document 1 is utilized.More
It says to body, directly proportional to correction size (height) of peak value Pkc, mobility also becomes larger and (gets higher).Therefore, for each evaluation pair
The oxide semiconductor SP of elephant compares the size of its each correction peak value Pkc, arranges by ascending or descending order, thus, it is possible to evaluation
Mobility between the oxide semiconductor SP of object carries out the evaluation of relativity.
Such oxide semiconductor evaluating apparatus D, for example, evaluating oxide semiconductor and being operated as follows
Mobility.Fig. 2 is the flow chart for indicating the work of oxide semiconductor evaluating apparatus of embodiment.Fig. 3 is to indicate to aoxidize
The figure of the time change of the reflectivity of object semiconductor.The horizontal axis of Fig. 3 is the time, and the longitudinal axis is reflectivity.Fig. 4 is to indicate considering
The figure of the relationship of mobility and peak value (correction peak value) when the thickness of oxide semiconductor.The horizontal axis of Fig. 4 is with cm2/ Vs is mono-
The mobility (Mobility) that position indicates, the longitudinal axis are corrections peak value (Corrected Peak Value).Fig. 5 is to indicate to aoxidize
The figure of the relationship of the thickness and mobility of each sample of object semiconductor.The horizontal axis of Fig. 5 is that the oxide indicated with nm unit is partly led
The film thickness of body, the longitudinal axis are with cm2The mobility that/Vs unit indicates.Fig. 6 is when indicating to consider the thickness of oxide semiconductor
The figure of mobility and the relationship of peak value.The horizontal axis of Fig. 6 is with cm2The mobility (Mobility) that/Vs unit indicates, the longitudinal axis are
The peak value (Peak Value) indicated with mV unit.
The oxide semiconductor SP setting of evaluation object (sample) is on mobile microscope carrier 11, if via the operation of input unit 6
And indicate that evaluation starts, then in Fig. 2, in each position of oxide semiconductor SP, measures its back wave (S1a), measure its thickness
It spends (S1b).These processing S1a and processing S1b, can mutually different position for oxide semiconductor SP it is substantially real simultaneously
Row or these processing S1a and the processing for handling the side among S1b are first implemented, and implement after the processing of another party.
If being specifically illustrated for these each processing S1a, S1b, firstly, in processing S1a, it then follows control processing unit
The control of 5 acquisition unit 52, measurement wave are irradiated to the measurement position (measurement of oxide semiconductor SP by measurement wave irradiation portion 2
Region), the measurement wave reflected by oxide semiconductor SP is measured by echo measurement portion 3, measurement result is surveyed from back wave
Amount portion 3 is output to control processing unit 5.In more detail, it then follows the control of acquisition unit 52, measurement wave generating unit 21 generate measurement
Wave, the measurement wave of the generation, the 1st terminal of incident circulator 22 via the 1st waveguide 23-1.From the survey of the 1st terminal incidence
Wave is measured, is projected from the 2nd terminal of circulator 22, the 2nd waveguide 23-2 of incidence is propagated in the 2nd waveguide 23-2.This
The measurement wave propagated in 2 waveguide 23-2, in order to irradiate the measurement position of oxide semiconductor SP, from as radiating guide
It is radiated towards the measurement position opening portion 231.Then, the measurement wave (reflection of measurement wave reflected by oxide semiconductor SP
Wave), it is incident from the opening portion 231, and be received.The back wave is via the 2nd of the 2nd waveguide 23-2 incidence circulator 22
Terminal.From the back wave of the 2nd terminal incidence, projected from the 3rd terminal of circulator 22, it is incident anti-via the 3rd waveguide 23-3
Ejected wave measurement portion 3 measures its intensity (or reflectivity) by echo measurement portion 3.The back wave measured intensity (or reflection
Rate) acquisition unit 52 of control processing unit 5 is output to from echo measurement portion 3.
On the other hand, it then follows the control of the acquisition unit 52 of control processing unit 5 is, it is specified that light is irradiated to oxidation by light source portion 1
The measurement position of object semiconductor SP.In more detail, it then follows the control of acquisition unit 52, light source portion 1 project anti-for measuring
The peak value of ejected wave and the pulse laser for possessing sufficient pulse width, the 2nd waveguide 23-2's of pulse laser incidence of the injection
Opening portion 232 is propagated in the 2nd waveguide 23-2, in order to irradiate the measurement position of oxide semiconductor SP, from as waveguide
It is projected towards the measurement position opening portion 231 of antenna.
When thus by pulsed laser irradiation to oxide semiconductor SP, if measurement wave is irradiated to oxide semiconductor
On SP, then the Strength Changes of back wave caused by pulse laser are via echo measurement portion 3 and by the acquisition unit of control processing unit 5
52 intakes.In general, measurement wave is irradiated on oxide semiconductor SP, oxide semiconductor SP is irradiated to for wave is measured by one side
Upper one side irradiated with pulse laser measures the Strength Changes of the back wave after the irradiation of pulse laser (after turning off the light) soon.
An example of the measurement result is shown in Fig. 3.As shown in Fig. 3, the reflectivity of back wave, in the photograph of pulse laser
After penetrating beginning, get higher together with time going by, soon, generation and the plural equilibrium of excess carriers and become substantially fixed
Saturation state be lower together with time going by after the irradiation of pulse laser stops, soon, carrier becomes thermal balance
State and it is substantially stationary.
It is such measurement wave back wave reflectivity time change, respectively each position of oxide semiconductor SP into
Row measurement, it is corresponding with the position and be stored in storage unit 9.
In addition, in processing S1b, it then follows the control of the acquisition unit 52 of control processing unit 5, thickness measure portion 4 is in measurement position
Measurement is set along the thickness of the direction of travel of pulse laser.Then, this measurement result is output to control processing by thickness measure portion 4
Portion 5.The thickness of oxide semiconductor SP, respectively oxide semiconductor SP each position measurement and with its position it is corresponding and
It is stored in storage unit 9.In addition, other than the thickness, also measuring oxide half when thickness measure portion 4 is light splitting ellipsometer
The extinction coefficient k of conductor SP, the extinction coefficient k measured, it is also corresponding with its position and be stored in storage unit 9.
Back wave and thickness are measured, then controls processing unit 5 in each position of oxide semiconductor SP respectively if so
Peak value operational part 53, respectively in each position of oxide semiconductor SP, according to the time change for the reflectivity that storage unit 9 is stored
(that is, being measured by echo measurement portion 3, by the intensity or its reflectivity of the back wave that acquisition unit 5 obtains), acquires reflectivity
Peak value (maximum value of reflectivity) Pk (S2).For example, in the example shown in Fig. 3, being saturated in the irradiation of pulse laser
Saturated level is acquired as peak value Pk.
Then, if peaking Pk, correction unit 54 in each position of oxide semiconductor SP, is deposited respectively with storage unit 9
The thickness of the oxide semiconductor SP of storage by thickness measure portion 4 (that is, measured, the oxide semiconductor SP obtained by acquisition unit 52
Thickness) d, correct the peak value that is acquired by peak value operational part 53, thus acquire correction peak value Pkc (S3).More specifically, it corrects
Portion 54 is by obtaining above formula (1): Pkc=Pk/ (1-exp (- α d)) acquires correction peak value Pkc.Here, absorption coefficient, as above
State, can be in advance from input unit 6 input numerical value, in addition, thickness measure portion 4 be light splitting ellipsometer when, can also according to by
It is divided the extinction coefficient k that ellipsometer measurement goes out, by with above-mentioned formula (2): the π k/ of α=4 λ is acquired.
Here, inventors speculate as follows, it is believed that, then can be by correcting by correcting peak value by above-mentioned formula (1)
The mobility of peak value evaluation oxide semiconductor.Because the band gap of oxide semiconductor is bigger, common μ-PCD method
Used in the light of wavelength be not absorbed completely in the thin oxide semiconductor of film thickness, but little by little penetrate.Therefore, companion
With the increase of the film thickness of oxide semiconductor, the uptake of light also increases, and the excess carriers amount being thus excited increases, therefore
The peak value of reflectivity becomes larger.Therefore, if making peak value become smaller to correspond to the increase of the absorption coefficient of oxide semiconductor, separately
On the one hand, peak value is corrected in a manner of corresponding to the increase of thickness d of oxide semiconductor and peak value is made to become smaller, that is, for example, if
Peak value is corrected with formula (1), then does not rely on film thickness, so that it may carry out the evaluation of the mobility of oxide semiconductor.
It is illustrated below for an experimental example.Firstly, the oxide semiconductor of the different amorphous of thickness is made
(InGaZnO) multiple samples.Its production method is method same as the film build method disclosed in patent document 1, is led to
It crosses use and possesses InGaZnO4The sputtering of the target of this composition, forms a film on the glass substrate.Film thickness by change film formation time into
Row change.It is suitable for changing the content of annealing to change that mobility, which passes through,.In obtained each sample, film thickness with move
The relationship of shifting rate is shown in Fig. 5.As shown in Figure 5, each sample relative to film thickness about 40~205nm, their mobility about 9
~11, it is approximately fixed.In addition, the mobility of Fig. 5 and the patent document 1 are again it is be made film with identical membrance casting condition
Transistor is acquired and measuring Id-Vg characteristic (for the characteristic of the leakage current Ig of gate voltage Vg) of the thin film transistor (TFT).
For such each sample, by manage everywhere in above-mentioned the reflectivity acquired peak value as the result is shown in Fig. 6
In, the correction peak value of reflectivity as the result is shown in Fig. 4.It will be appreciated from fig. 6 that the peak value of reflectivity, relative to mobility be with
Machine can't see interrelated, but the correction peak value of the reflectivity acquired using above-mentioned formula (1), as shown in figure 4, relative to migration
Rate can be seen interrelated.
Therefore, the peak value that reflectivity is acquired using μ-PCD is acquired it by above-mentioned formula (1) and corrects peak value, thus do not relied on
Film thickness is just able to carry out the evaluation of the mobility of oxide semiconductor.
Fig. 2 is returned to, if acquiring the correction peak value of reflectivity respectively for each position of oxide semiconductor SP, at control
The evaluation section 55 in reason portion 5 evaluates the mobility (S4) of oxide semiconductor SP based on the correction peak value corrected by correction unit 54.
Each correction peak value for handling each position acquired in S3 can also be directly output to output section 7 by evaluation section 55, but in this implementation
In mode, the relative evaluation for the mobility for making each position about oxide semiconductor SP is taken to be easy the side for allowing user to understand
Formula, for example, evaluation section 55 standardizes the correction peak value of each position with maximum correction peak value.It follows that nearer it is to 1,
The mobility of this position is with regard to relativity bigger compared with the mobility of other each position.In addition for example, for multiple oxides half
When conductor SP is compared, evaluation section 55 acquires each correction peak value of each position most respectively for each oxide semiconductor SP
The typical value as the mobility of oxide semiconductor SP such as big value and average value, is acquired these with the maximum typical value
Each oxide semiconductor SP each typical value standardization.It follows that nearer it is to 1, the migration of oxide semiconductor SP
It is relatively bigger for the more other each oxide semiconductor SP of rate.In addition for example, comparing for multiple oxide semiconductor SP
Compared with when, evaluation section 55 equally acquires typical value, arranges each oxide half by the descending of each typical value of each oxide semiconductor SP
Conductor SP.It can thus be appreciated that the size of the relativity of the mobility between each oxide semiconductor SP.
Then, processing unit 5 is controlled, which is output to output section 7 (S5).In addition, as needed, control processing
The evaluation result is output to external equipment from the portion IF 8 by portion 5.
More than, as described, in the oxide semiconductor evaluating apparatus D of present embodiment and its oxide assembled half
In conductor evaluation method, the intensity and thickness of the back wave of the oxide semiconductor SP of evaluation object are measured, based on measured
The intensity and thickness of back wave evaluate the mobility of oxide semiconductor SP.Therefore, such oxide semiconductor evaluating apparatus
D and this method are not based on the intensity of back wave to evaluate the mobility of oxide semiconductor SP, but carry out one and consider oxidation
The thickness of object semiconductor SP, evaluates the mobility of oxide semiconductor SP accordingly, therefore can more precisely evaluate oxide
The mobility of semiconductor SP.
In addition, the oxide semiconductor evaluating apparatus D and this method of present embodiment because be acquire it is related with mobility
The peak value of the reflectivity of connection relationship, with the thickness correction of the oxide semiconductor SP peak value acquired, so being capable of higher precision
The mobility of ground evaluation oxide semiconductor SP.
This specification discloses the technology of various modes as described so, but wherein main technology is summarized as follows.
The oxide semiconductor evaluating apparatus of one mode, has as follows: the illumination of provision wavelengths is mapped to evaluation object
Oxide semiconductor on illumination part；The measurement wave irradiation portion of defined measurement wave is irradiated to the oxide semiconductor；
The echo measurement portion of the back wave for the measurement wave that measurement is reflected by the oxide semiconductor；Measurement is along the light
The thickness measure portion of the thickness of the oxide semiconductor on this direction of the direction of travel for the light that irradiation portion is irradiated；It is based on
It is measured by the thickness for the oxide semiconductor that the thickness measure portion measures, correction by the echo measurement portion
The processing unit of the intensity of the back wave.
In such oxide semiconductor evaluating apparatus, the strong of the back wave of the oxide semiconductor of evaluation object is measured
Degree and thickness, the intensity based on the measured thickness correction back wave.Therefore, such oxide semiconductor evaluating apparatus,
The intensity of back wave is not based on to evaluate the mobility of oxide semiconductor, but further considers the thickness of oxide semiconductor
Degree, to evaluate the mobility of oxide semiconductor, therefore can more precisely evaluate the mobility of oxide semiconductor.
In another way, in above-mentioned oxide semiconductor evaluating apparatus, have as follows: the echo measurement portion
The reflectivity of the back wave is measured, the processing unit acquires the peak of the reflectivity by echo measurement portion measurement
The peak value operational part of value；With the thickness of the oxide semiconductor measured by the thickness measure portion, correct by the peak
The peak value that value operational part acquires, to acquire the correction unit of correction peak value.
Such oxide semiconductor evaluating apparatus, because being the peak for acquiring the reflectivity relevant with mobility
Value, with the thickness correction of the oxide semiconductor peak value acquired, partly leads so the oxide can be evaluated more precisely
The mobility of body.
In another way, in above-mentioned oxide semiconductor evaluating apparatus, the correction unit, if the peak value is
Pk, if the absorption coefficient and thickness of the oxide semiconductor are respectively α and d, by formula (1): Pkc=Pk/ (1-exp (- α
D) the correction peak value Pkc) is acquired.
Hereby it is possible to provide the oxide semiconductor evaluating apparatus for acquiring correction peak value using the formula (1).
In another way, in above-mentioned oxide semiconductor evaluating apparatus, the thickness measure portion further measures institute
State the extinction coefficient k of oxide semiconductor.
Absorption coefficient is also possible to the existing value found out by other means, but such oxide semiconductor is commented
In valence device, the extinction coefficient of the oxide semiconductor of evaluation object is measured, the extinction coefficient measured according to this, with formula
(2): the π k/ of α=4 λ acquires absorption coefficient.Therefore, such oxide semiconductor evaluating apparatus, because being to acquire evaluation object certainly
The absorption coefficient of body, thus can the mobility more precisely for evaluation object itself evaluate.
In another way, in these above-mentioned oxide semiconductor evaluating apparatus, the processing unit be also equipped with based on by
The correction peak value of correction unit correction evaluates the evaluation section of the mobility of the oxide semiconductor.
Hereby it is possible to provide based on correction peak value the oxide semiconductor evaluation for the mobility for evaluating oxide semiconductor
Device.
Then, the oxide semiconductor evaluation method of another mode, has following process: the light of provision wavelengths is irradiated
Light irradiation process on to the oxide semiconductor of evaluation object；The survey of defined measurement wave is irradiated to the oxide semiconductor
Measure wave irradiation process；The echo measurement process of the back wave for the measurement wave that measurement is reflected by the oxide semiconductor；
Measure the thickness along the oxide semiconductor on this direction of the direction of travel of light by the smooth irradiation process irradiation
Thickness measure process；Based on the thickness of the oxide semiconductor as measured by the thickness measure process, correction by
The treatment process of the intensity of the back wave measured by the echo measurement process.
In such oxide semiconductor evaluation method, the strong of the back wave of the oxide semiconductor of evaluation object is measured
Degree and thickness, the intensity based on the thickness correction back wave measured.Therefore, such oxide semiconductor evaluation method,
It is not based on the mobility of the intensity evaluation oxide semiconductor of back wave, but by further considering oxide semiconductor
Thickness and the mobility for evaluating oxide semiconductor, therefore can more precisely evaluate the mobility of oxide semiconductor.
This application based on Japanese Patent Application (patent application 2014-118388) filed on June 9th, 2014,
Its content includes in this application.
It is above-mentioned to pass through embodiment while referring to attached drawing and adequately and sufficiently illustrate this hair in order to show the present invention
It is bright, but if being this field practitioner, then it should be realized that above-mentioned embodiment is changed and/or improved holding very much
Easily.Therefore, the change mode or mode of ameliorating that practitioner implements, as long as not departing from technical proposal scope described in claim
Level, then the change mode or the mode of ameliorating are just construed to include in the scope of the claims.
Industrial availability
In accordance with the invention it is possible to provide oxide semiconductor evaluating apparatus and oxide semiconductor evaluation method.
Claims (5)
1. a kind of oxide semiconductor evaluating apparatus, which is characterized in that have as follows:
The illumination part illumination of provision wavelengths being mapped on the oxide semiconductor of evaluation object；
The measurement wave irradiation portion of defined measurement wave is irradiated to the oxide semiconductor；
The echo measurement portion of the back wave for the measurement wave that measurement is reflected by the oxide semiconductor；
Measure the thickness of the oxide semiconductor on this direction of the direction of travel of light irradiated along the illumination part
The thickness measure portion of degree；
Based on the thickness for the oxide semiconductor measured by the thickness measure portion, correct by the echo measurement portion
The processing unit of the intensity for the back wave measured,
The echo measurement portion, measures the reflectivity of the back wave,
The processing unit have the peak value for acquiring the reflectivity measured by the echo measurement portion peak value operational part,
With with the thickness of the oxide semiconductor measured by the thickness measure portion, what correction was acquired by the peak value operational part
Peak value corrects the correction unit of peak value to acquire.
2. oxide semiconductor evaluating apparatus according to claim 1, which is characterized in that in the correction unit, if described
Peak value is Pk, if the absorption coefficient and thickness of the oxide semiconductor are respectively α and d, acquires the correction by following formula (1)
Peak value Pkc,
Pkc=Pk/ (1-exp (- α d)) ... (1).
3. oxide semiconductor evaluating apparatus according to claim 2, which is characterized in that the thickness measure portion is further
Measure the extinction coefficient k of the oxide semiconductor.
4. oxide semiconductor evaluating apparatus according to any one of claim 1 to 3, which is characterized in that the processing
Portion is also equipped with based on the correction peak value corrected by the correction unit, evaluates the evaluation section of the mobility of the oxide semiconductor.
5. a kind of oxide semiconductor evaluation method, which is characterized in that have following process:
The light irradiation process illumination of provision wavelengths being mapped on the oxide semiconductor of evaluation object；
The measurement wave irradiation process of defined measurement wave is irradiated to the oxide semiconductor；
The echo measurement process of the back wave for the measurement wave that measurement is reflected by the oxide semiconductor；
Measurement is partly led along the oxide on this direction of the direction of travel of the light irradiated using the smooth irradiation process
The thickness measure process of the thickness of body；
Based on the thickness of the oxide semiconductor measured by the thickness measure process, correct by the echo measurement
The treatment process of the intensity for the back wave that process is measured,
The echo measurement process, measures the reflectivity of the back wave,
The treatment process has the peak value fortune for the peak value for acquiring the reflectivity measured by the echo measurement process
It calculates process and with the thickness of the oxide semiconductor measured by the thickness measure process, correction is transported by the peak value
The peak value that process acquires is calculated to acquire the correcting process of correction peak value.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014118388A JP6243800B2 (en) | 2014-06-09 | 2014-06-09 | Oxide semiconductor evaluation apparatus and method |
| JP2014-118388 | 2014-06-09 | ||
| PCT/JP2015/058720 WO2015190151A1 (en) | 2014-06-09 | 2015-03-23 | Oxide semiconductor evaluation apparatus and oxide semiconductor evaluation method |
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| CN106104781A CN106104781A (en) | 2016-11-09 |
| CN106104781B true CN106104781B (en) | 2019-01-18 |
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| CN201580013083.0A Active CN106104781B (en) | 2014-06-09 | 2015-03-23 | Oxide semiconductor evaluating apparatus and this method |
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| JP (1) | JP6243800B2 (en) |
| KR (1) | KR101876113B1 (en) |
| CN (1) | CN106104781B (en) |
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| WO (1) | WO2015190151A1 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003156431A (en) * | 2002-09-24 | 2003-05-30 | Fujitsu Ltd | Method of determining composition of crystal layer |
| CN102313849A (en) * | 2010-06-30 | 2012-01-11 | 株式会社神户制钢所 | The evaluation method of oxide semiconductor thin-film and the method for quality control of oxide semiconductor thin-film |
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| JPH03141659A (en) * | 1989-10-26 | 1991-06-17 | Fujitsu Ltd | Evaluation of semiconductor |
| JP5100986B2 (en) * | 2005-07-14 | 2012-12-19 | 株式会社神戸製鋼所 | Semiconductor carrier lifetime measuring device, semiconductor carrier lifetime measuring method |
| JP5358373B2 (en) * | 2009-09-24 | 2013-12-04 | 株式会社神戸製鋼所 | Semiconductor thin film crystallinity evaluation method and crystallinity evaluation apparatus |
| TWM396965U (en) * | 2010-06-18 | 2011-01-21 | Schmid Yaya Technology Co Ltd | Detect apparatus of anti-reflective layers thickness for solar chip |
| JP5814558B2 (en) * | 2010-06-30 | 2015-11-17 | 株式会社神戸製鋼所 | Evaluation method of oxide semiconductor thin film and quality control method of oxide semiconductor thin film |
| TW201314194A (en) * | 2011-09-28 | 2013-04-01 | Ind Tech Res Inst | Object characteristics measurement system |
| JP5862522B2 (en) * | 2012-09-06 | 2016-02-16 | 株式会社島津製作所 | Inspection device |
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- 2015-03-23 WO PCT/JP2015/058720 patent/WO2015190151A1/en active Application Filing
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003156431A (en) * | 2002-09-24 | 2003-05-30 | Fujitsu Ltd | Method of determining composition of crystal layer |
| CN102313849A (en) * | 2010-06-30 | 2012-01-11 | 株式会社神户制钢所 | The evaluation method of oxide semiconductor thin-film and the method for quality control of oxide semiconductor thin-film |
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| KR101876113B1 (en) | 2018-07-06 |
| TW201546464A (en) | 2015-12-16 |
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| JP6243800B2 (en) | 2017-12-06 |
| WO2015190151A1 (en) | 2015-12-17 |
| CN106104781A (en) | 2016-11-09 |
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| TWI551871B (en) | 2016-10-01 |
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