CN106099629A - A kind of method of ultra-wide angular range suppression slab laser spontaneous amplification radiation - Google Patents

A kind of method of ultra-wide angular range suppression slab laser spontaneous amplification radiation Download PDF

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Publication number
CN106099629A
CN106099629A CN201610629924.7A CN201610629924A CN106099629A CN 106099629 A CN106099629 A CN 106099629A CN 201610629924 A CN201610629924 A CN 201610629924A CN 106099629 A CN106099629 A CN 106099629A
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thin film
medium
laser
metal
wide band
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CN106099629B (en
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焦宏飞
何宇
鲍刚华
马彬
张锦龙
程鑫彬
王占山
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Tongji University
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Tongji University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0619—Coatings, e.g. AR, HR, passivation layer
    • H01S3/0625—Coatings on surfaces other than the end-faces

Abstract

The method that the present invention relates to the suppression slab laser spontaneous amplification radiation of a kind of ultra-wide angular range, particularly as follows: use a medium/metal wide band absorption film to suppress spontaneous amplification to radiate between gain medium and metal heat sink.Medium/metal wide band absorption film includes two parts, is one layer of micron order thickness SiO near gain medium part2Evanescent wave thin film, to ensure signal laser total reflection transmission, at SiO2A kind of wide angle antireflective high-selenium corn medium/metal thin film it is coated with so that it is can absorb and penetrate SiO in the ultra-wide angular range of the 0 ° ~ angle of total reflection ° on evanescent wave thin film2The stray laser of evanescent wave thin film, suppresses spontaneous amplification to radiate.The present invention can be according to actual Demand Design wavelength, have broad application prospects in field of lasers, can solve to limit the factor that laser power increases from principle, have higher can preparative, it is easy to promote, provides a brand-new solution for ASE suppression problem in high power solid state laser.

Description

A kind of method of ultra-wide angular range suppression slab laser spontaneous amplification radiation
Technical field
The present invention relates to optical thin film, particularly relate in a kind of ultra-wide angular range suppression lath gain medium spontaneous Amplify the technical method of radiation (ASE).
Background technology
Since 20th century, high power laser is in laser-produced fusion, national defense and military, commercial production, medical apparatus and instruments, space communication Considerable effect is played with aspects such as space technologies.Wherein slab laser is due to its excellent transformation efficiency and light beam Mass property becomes studies the most popular laser instrument in current solid state laser.Research before shows pumping homogeneity, temperature It is to limit laser instrument output energy and the principal element of beam quality quality that (ASE) effect is amplified in uniformity and spontaneous radiation. Wherein pumping homogeneity and temperature homogeneity the two restrictive factor control from the configuration of initial laser instrument designs well, But ASE effect exists all the time in laser amplifier and angular range is big.This means that to study powerful slab laser ASE effect must be suppressed in polarizers of big angle scope in gain medium.ASE effect is substantially main by slab laser Veiling glare causes, and just can effectively suppress so being absorbed by veiling glare in theory.Major part scholar uses and is increased by slab laser Benefit media side is coated with the methods such as antireflective film to suppress ASE, and this method only can suppress 0-in lath laser gain medium The veiling glare of about 33 °, does not has good inhibition.As a example by YAG gain media, make with the aforedescribed process, from 33 ° to entirely ASE between angle of reflection 53 ° has no idea to process.Along with the raising of the power demand of slab laser, the suppression to ASE carries Go out new challenge, needed the veiling glare hypersorption in the range of the 0 °-angle of total reflection ° of slab laser gain media.Therefore invent In a kind of ultra-wide angle suppression lath gain medium, the technical method of spontaneous amplification radiation (ASE), swashs for improving lath Output energy in light device, develops great-power solid laser significant.
For this present invention, spontaneous amplification radiation (ASE) in a kind of ultra-wide angular range suppression lath gain medium is proposed Technical method: between gain medium and metal heat sink use a medium/metal wide band absorption film suppress ASE's Method.This medium/metal wide band absorption film includes two parts, is one layer of SiO near gain medium2Evanescent wave thin film is protected Card signal laser total reflection transmission, at SiO2A kind of wide angle antireflective high-selenium corn medium/metal it is coated with on evanescent wave thin film Thin film so that it is can absorb in the ultra-wide angular range of the 0 ° ~ angle of total reflection ° and penetrate SiO2The stray laser of evanescent wave thin film is come Spontaneous amplification is suppressed to radiate.
Summary of the invention
It is an object of the invention to provide spontaneous amplification spoke in a kind of ultra-wide angular range suppression lath gain medium Penetrate the technical method of (ASE), it can in polarizers of big angle scope the veiling glare in absorption panel laser instrument, and for main laser realize Total reflection, realizes the suppression of ASE effect in slab laser well.The inventive method can be according to actual Demand Design ripple Long, have broad application prospects in field of lasers, from principle, solve the factor limiting laser power, have higher Can preparative, it is simple to promote.
The method of a kind of ultra-wide angular range suppression slab laser spontaneous amplification radiation that the present invention proposes, concrete steps As follows:
Select slab laser；Physical vapour deposition (PVD) side is used between the gain medium and metal heat sink of slab laser Formula arrange micron order thickness with SiO2Thin film is evanescent wave thin film and the medium/metal wide band absorption thin film of raw material；Near plate The gain medium side of bar laser instrument is coated with the evanescent wave thin film of one layer of micron order thickness, and described evanescent wave thin film is in order to protect Card signal laser total reflection transmission, is coated with layer of metal/medium wide band absorption thin film so that it is Neng Gou on evanescent wave thin film In the ultra-wide angular range of the 0 ° ~ angle of total reflection °, absorb the stray laser penetrating evanescent wave thin film, suppress spontaneous amplification to radiate.
In the present invention, the film system spectrum of medium/metal wide band absorption film can be with conventional optical monitoring or crystal oscillator monitoring Realize easily.
In the present invention, described slab laser is solid state laser, and gain media is solid, and gain media can be red treasured In stone, neodymium glass, quasiconductor any one, described quasiconductor includes in neodymium-doped gadolinium vanadate monocrystalline, Nd-doped yttrium vanadate or YAG etc. arbitrary Kind.
In the present invention, the metal in medium/metal wide band absorption thin film can be any one in Cr, Ag or Al etc. or Several, medium can be SiO2、Al2O3、MgF2、TiO2Or Ta2O5Any one in Deng.
In the present invention, described medium/metal wide band absorption thin film is insensitive to the angle of incident illumination, has wide wavelength, big Angular absorption characteristic.
In the present invention, the Film Design wavelength of medium/metal wide band absorption thin film can be according to slab laser equipment Feature and demand are arbitrarily chosen.
The beneficial effects of the present invention is: can be according to the arbitrarily devised thin film of the feature of slab laser and demand, simultaneously The design of medium/metal wide band absorption film is simple, can realize easily with conventional optical monitoring or crystal oscillator monitoring.Lead at laser instrument Territory has broad application prospects, and can solve to limit the factor that laser power increases, have higher preparing from principle Property, it is simple to promote.
Accompanying drawing explanation
Fig. 1: medium/metal wide band absorption membrane structure schematic diagram.
Fig. 2: for the angular spectrum curve of wide band absorption film of the YAG slab laser of 1064nm, design wavelength is 1064nm.
Fig. 3: for the Cr/SiO of the YAG slab laser of 1064nm2The theory of wide band absorption film and actual measurement angular spectrum.
Fig. 4: for the angular spectrum curve of wide band absorption film of the neodymium glass sheet laser of 1053nm, design wavelength is 1053nm。
Detailed description of the invention
Below by specific embodiment, the present invention is described in further detail.
Embodiment 1:
YAG slab laser for 1064nm needs to prepare the medium/metal wide band absorption film of 1064nm suppression ASE effect, Owing to its film system applies on slab laser, the veiling glare absorption to 1064nm requires the strictest.To this end, in laser gain A Cr/ SiO is used between medium and metal heat sink2What the replacement of wide band absorption film was traditional only uses SiO2Evanescent wave thin film presses down ASE processed.This Cr/ SiO2Wide band absorption film includes two parts, is one layer of SiO near gain medium2Evanescent wave thin film is protected Card signal laser total reflection, at SiO2A kind of wide angle antireflective high-selenium corn Cr/ SiO it is coated with on evanescent wave thin film2Thin film, makes It can absorb in the ultra-wide angular range of 0 ° ~ 55 ° and penetrate SiO2The stray laser of evanescent wave thin film suppresses spontaneous amplification Radiation.By this kind of method, success is on the outfit reflective indirect control and supervision filming equipment OTFC-1300 that OPTORUN produces Prepare the wide band absorption film of suppression 1064nmYAG slab laser ASE effect.Due to this Cr/ SiO2Wide band absorption film is applied On slab laser, directly measure its angular spectrum assimilation effect relatively difficult, so we measure light incides stone from air To the angular spectrum of sample on English substrate, its design angular spectrum and actual measurement angular spectrum are as shown in Figure 3.Result shows that design measures angle with experiment Unanimously, actual laser system test shows that in slab laser, ASE has obtained good inhibition.
The spectrum of medium/metal wide band absorption film of the present invention, as a example by spectrum shown in Fig. 2, with YAG gain media As a example by, for the design wavelength of 1064nm, its principal character has 2: achieve wide-angle at the 0 °-angle of total reflection ° (55 °) spectrum Absorbing, average absorption is more than 90%, and spectrum average absorption is more than 95% in 0-44 ° of angular range, it is achieved that for 1064nm The high-selenium corn of veiling glare, when incident illumination exceedes the angle of total reflection, spectral reflectivity is up to 100%.The spectrum of the present invention ensure that Main laser total reflection in slab laser, and achieve the effect of the suppression ASE of metal medium wide band absorption film.
Embodiment 2:
Neodymium glass sheet laser for 1053nm needs to prepare the medium/metal wide band absorption of 1053nm suppression ASE effect Film, owing to its film system applies on slab laser, the veiling glare absorption to 1053nm requires the strictest.To this end, at laser A Ni/Al/SiO is used between gain media and metal heat sink2What the replacement of wide band absorption film was traditional only uses SiO2Evanescent wave is thin Film suppresses ASE.This Ni/Al/ SiO2Wide band absorption film includes two parts, is one layer of SiO near gain medium2Suddenly die Ripple thin film ensures signal laser total reflection, at SiO2A kind of wide angle antireflective high-selenium corn Ni/Al/ it is coated with on evanescent wave thin film SiO2Thin film so that it is can absorb in the ultra-wide angular range of 0 ° ~ 74 ° and penetrate SiO2The stray laser of evanescent wave thin film presses down Making spontaneous amplification radiation, its design angular spectrum is as shown in Figure 4.
The spectrum of medium/metal wide band absorption film of the present invention, as a example by spectrum shown in Fig. 4, with neodymium glass gain As a example by medium, for the design wavelength of 1053nm, its principal character has 2: achieve greatly at the 0 °-angle of total reflection ° (74 °) spectrum Angular absorption, average absorption is more than 90%, it is achieved that for the high-selenium corn of the veiling glare of 1053nm, when incident illumination exceedes total reflection During angle, spectral reflectivity is up to 100%.The spectrum of the present invention ensure that the main laser total reflection in slab laser, and realizes The effect of the suppression ASE of metal medium wide band absorption film.

Claims (6)

1. the method for a ultra-wide angular range suppression slab laser spontaneous amplification radiation, it is characterised in that concrete steps are such as Under:
Select slab laser；Physical vapour deposition (PVD) side is used between the gain medium and metal heat sink of slab laser Formula arrange micron order thickness with SiO2Thin film is evanescent wave thin film and the medium/metal wide band absorption thin film of raw material；Near plate The gain medium side of bar laser instrument is coated with the evanescent wave thin film of one layer of micron order thickness, and described evanescent wave thin film is in order to protect Card signal laser total reflection transmission, is coated with layer of metal/medium wide band absorption thin film so that it is Neng Gou on evanescent wave thin film In the ultra-wide angular range of the 0 ° ~ angle of total reflection °, absorb the stray laser penetrating evanescent wave thin film, to suppress spontaneous amplification to radiate.
Method the most according to claim 1, it is characterised in that the film system spectrum of medium/metal wide band absorption film uses routine Optical monitoring or crystal oscillator monitoring realize easily.
Method the most according to claim 1, it is characterised in that described slab laser is solid state laser, gain media is Solid, gain media is any one in ruby, neodymium glass or quasiconductor, and described quasiconductor includes neodymium-doped gadolinium vanadate monocrystalline, mixes In neodymium Yttrium Orthovanadate or YAG any one.
Method the most according to claim 1, it is characterised in that the metal in medium/metal wide band absorption thin film can be In Cr, Ag or Al any one or several, medium is SiO2、Al2O3、MgF2、TiO2Or Ta2O5In any one.
Method the most according to claim 1, it is characterised in that the described medium/metal wide band absorption thin film angle to incident illumination Spend insensitive, there is wide wavelength, wide-angle absorption characteristic.
Method the most according to claim 1, it is characterised in that the Film Design wavelength root of medium/metal wide band absorption thin film Feature and demand according to slab laser equipment are arbitrarily chosen.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106340793A (en) * 2016-11-25 2017-01-18 中国工程物理研究院应用电子学研究所 Large-area-fluorescence-absorption-based metalized transition layer structure for suppressing amplified spontaneous emission of batten
CN106785869A (en) * 2016-12-30 2017-05-31 中国工程物理研究院应用电子学研究所 One kind is based on lath gating angle multi-pass amplifier super-fluorescence light source
CN109510060A (en) * 2018-12-29 2019-03-22 润坤(上海)光学科技有限公司 A kind of anti-reflection structure of the crystal fully reflecting surface for slab laser
CN109830879A (en) * 2019-03-27 2019-05-31 中国科学院理化技术研究所 A kind of laser module and laser based on birefringece crystal

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4849036A (en) * 1987-11-02 1989-07-18 The United States Of America As Represented By The United States Department Of Energy Composite polymer-glass edge cladding for laser disks
CN1048184A (en) * 1990-04-12 1991-01-02 四川大学 Multiple strip laser crystal processing technology by disks and its device
US5335237A (en) * 1992-10-29 1994-08-02 The United States Of America As Represented By The United States Department Of Energy Parasitic oscillation suppression in solid state lasers using absorbing thin films
CN1905292A (en) * 2006-07-26 2007-01-31 中国科学院上海光学精密机械研究所 Lath laser for implementing Z shape light path by reflecting glass
US20070230534A1 (en) * 2006-03-29 2007-10-04 The Regents Of The University Of California Grating enhanced solid-state laser amplifiers
CN101976796A (en) * 2010-09-06 2011-02-16 中国科学院上海光学精密机械研究所 Method for inhibiting amplified spontaneous emission of large-size sheet laser neodymium glass
JP2013038096A (en) * 2011-08-03 2013-02-21 Mitsubishi Electric Corp Plane waveguide type laser device
CN105529602A (en) * 2016-01-27 2016-04-27 北京工业大学 Method for suppressing parasitic oscillation in gain medium of grazing incidence plate strip

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4849036A (en) * 1987-11-02 1989-07-18 The United States Of America As Represented By The United States Department Of Energy Composite polymer-glass edge cladding for laser disks
CN1048184A (en) * 1990-04-12 1991-01-02 四川大学 Multiple strip laser crystal processing technology by disks and its device
US5335237A (en) * 1992-10-29 1994-08-02 The United States Of America As Represented By The United States Department Of Energy Parasitic oscillation suppression in solid state lasers using absorbing thin films
US20070230534A1 (en) * 2006-03-29 2007-10-04 The Regents Of The University Of California Grating enhanced solid-state laser amplifiers
CN1905292A (en) * 2006-07-26 2007-01-31 中国科学院上海光学精密机械研究所 Lath laser for implementing Z shape light path by reflecting glass
CN101976796A (en) * 2010-09-06 2011-02-16 中国科学院上海光学精密机械研究所 Method for inhibiting amplified spontaneous emission of large-size sheet laser neodymium glass
JP2013038096A (en) * 2011-08-03 2013-02-21 Mitsubishi Electric Corp Plane waveguide type laser device
CN105529602A (en) * 2016-01-27 2016-04-27 北京工业大学 Method for suppressing parasitic oscillation in gain medium of grazing incidence plate strip

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106340793A (en) * 2016-11-25 2017-01-18 中国工程物理研究院应用电子学研究所 Large-area-fluorescence-absorption-based metalized transition layer structure for suppressing amplified spontaneous emission of batten
CN106785869A (en) * 2016-12-30 2017-05-31 中国工程物理研究院应用电子学研究所 One kind is based on lath gating angle multi-pass amplifier super-fluorescence light source
CN109510060A (en) * 2018-12-29 2019-03-22 润坤(上海)光学科技有限公司 A kind of anti-reflection structure of the crystal fully reflecting surface for slab laser
CN109830879A (en) * 2019-03-27 2019-05-31 中国科学院理化技术研究所 A kind of laser module and laser based on birefringece crystal

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