CN106098812B - A kind of solar cell and preparation method based on oxygen doping zinc telluridse nano-wire array - Google Patents
A kind of solar cell and preparation method based on oxygen doping zinc telluridse nano-wire array Download PDFInfo
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- CN106098812B CN106098812B CN201610466410.4A CN201610466410A CN106098812B CN 106098812 B CN106098812 B CN 106098812B CN 201610466410 A CN201610466410 A CN 201610466410A CN 106098812 B CN106098812 B CN 106098812B
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 title claims abstract description 122
- 239000011701 zinc Substances 0.000 title claims abstract description 122
- 229910052725 zinc Inorganic materials 0.000 title claims abstract description 122
- 239000002070 nanowire Substances 0.000 title claims abstract description 77
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 239000001301 oxygen Substances 0.000 title claims abstract description 70
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 70
- 238000002360 preparation method Methods 0.000 title claims description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000011787 zinc oxide Substances 0.000 claims abstract description 29
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 9
- 238000010521 absorption reaction Methods 0.000 claims abstract description 4
- 238000000605 extraction Methods 0.000 claims abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 11
- 239000003054 catalyst Substances 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 5
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 4
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 239000008246 gaseous mixture Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 4
- 238000004549 pulsed laser deposition Methods 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 claims description 2
- 238000011144 upstream manufacturing Methods 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000009738 saturating Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 210000004276 hyalin Anatomy 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- -1 i.e. Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type the devices comprising monocrystalline or polycrystalline materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses the solar cell based on oxygen doping zinc telluridse nano-wire array, it is followed successively by from top to bottom：N-type AZO transparent conductive film, zinc oxide/oxygen doping zinc telluridse/three layers of the zinc telluridse nano-wire array coaxially coated, the PMDS supporting layers of parcel nano wire bottom and the p-type doping height for having wrapped up the nano-wire array top that zinc oxide/oxygen doping zinc telluridse/three layers of zinc telluridse coaxially coats lead monocrystalline silicon layer substrate, and photoelectric absorption layer is used as by the use of the zinc oxide with Intermediate Gray characteristic/oxygen doping zinc telluridse/three layers of zinc telluridse nano-wire array coaxially coated；Monocrystalline silicon layer difference extraction electrode is led in AZO transparent conductive film and p-type doping height.
Description
Technical field
The present invention relates to a kind of solar battery structure with nano wire absorbed layer and preparation method thereof, belong to solar cell
Technical field.
Background technology
Solar cell is the phototube that electric energy is converted solar energy into using the photovoltaic effect of photovoltaic semiconductors material
Part, it is obtained for and is widely applied in production and life.Existing solar cell is typically made up of the monocrystalline silicon circle of super clean,
The thickness for requiring this very expensive material simultaneously is about 200um, and to absorb sunshine as much as possible, this makes silicon substrate flat board
Solar cell manufacturing process becomes complicated, and energy consumption is big, and cost is high.Compared with traditional solar cell, Intermediate Gray solar cell with compared with
The opto-electronic conversion for having realized efficient for simple structure, and the nano wire absorbed layer with Intermediate Gray is then possessing the Intermediate Gray sun
The drift distance of carrier is shortened on the basis of battery advantage, further increases the conversion efficiency of solar energy.
Traditional solar cell using monocrystalline silicon circle as material can only absorb the photon of the energy gap (1.1eV) more than silicon,
And the energy beyond energy gap can be converted into heat energy in the form of electron-lattice interacts.So theoretical prophesy traditional silicon
The conversion efficiency of solar cell can not possibly be more than 32%. Intermediate Gray solar cells with high mismatch alloy, quantum dot is this kind of has
The material of Intermediate Gray property is the solar cell of absorbed layer.With high mismatch alloy oxygen doping zinc telluridse (ZnTe:O, band gap are
Exemplified by Intermediate Gray photovoltaic material 2.25eV), the equalized electron adulterated of oxygen forms stable Intermediate Gray, level of energy position in forbidden band
The 0.45eV below conduction band bottom, i.e., at 1.8eV.When by sunlight, electronics can not only pass through valency band-to-band
Mode transition, can also carry out transition by way of valence band-middle band-to-band, thus the relatively low photon of energy can also obtain
To utilization.So the conversion efficiency of Intermediate Gray solar cell is far above traditional solar cell.The transmissivity of other monocrystalline silicon is higher,
Thus the silicon absorbed layer of hundreds of micron dimension thickness is needed just to fully absorb photon.And intermediate zone material absorbed layer typically have compared with
Low transmissivity, the thickness of absorbed layer is in hundred nanometer scales.
Compared to the absorbed layer of layer structure, the design feature of nano wire make it that carrier average drift distance is shorter.Inhale
The photo-generated carrier in layer is received in Drift Process, it may occur however that non-radiative recombination.Shorten drift of the carrier in absorbed layer
Distance advantageously reduces the probability of Carrier recombination, so as to further increase the photoelectric transformation efficiency of solar cell.
The content of the invention
It is an object of the present invention to propose the Intermediate Gray sun electricity that a kind of oxygen doping zinc telluridse nano-wire array enhancing absorbs
Pool structure, on the basis of Intermediate Gray solar cell technology, Intermediate Gray solar cell is further lifted as absorbed layer using nano wire
Light conversion efficiency, laid a solid foundation to prepare efficient solar battery, be expected to realize solar cell of future generation to height
Effect, the direction of low cost are developed.
The technical scheme of the present invention that solves the problems, such as is：Based on the solar cell of oxygen doping zinc telluridse nano-wire array, from upper
It is followed successively by under and：The n-type on the nano-wire array top that zinc oxide/oxygen doping zinc telluridse/three layers of zinc telluridse coaxially coats is wrapped up
(vertically) nano-wire array, the bag that AZO transparent conductive film, zinc oxide/oxygen doping zinc telluridse/three layers of zinc telluridse coaxially coat
Wrap up in nano wire bottom PMDS supporting layers and p-type doping height lead monocrystalline silicon layer substrate, using the zinc oxide with Intermediate Gray characteristic/
The vertical nano-wire array that oxygen doping zinc telluridse/three layers of zinc telluridse coaxially coats is as photoelectric absorption layer；It is thin in AZO electrically conducting transparents
Film and p-type doping height lead monocrystalline silicon layer difference extraction electrode；
Oxygen doping zinc telluridse nano-wire array is highly 5~10 μm, a diameter of 100-300nm, oxygen in oxygen doping zinc telluridse
Diffusing, doping concentration is 1-5%, and thickness of diffusion layer is in 20~100nm；Zinc telluridse thickness is 10~50nm；Zinc oxide, oxygen doping
Zinc telluridse, zinc telluridse three form coaxial clad structure, and zinc oxide is in outermost layer；In high-resolution Flied emission scanning electron microscopy
Microscopic observation, per on square micron of substrate surface it is observed that oxygen doping zinc telluridse number of nanowires should be more than 2.
Preparation method：The physical vapor of zinc oxide/oxygen doping zinc telluridse/three layers of nano-wire array coaxially coated of zinc telluridse
It is deposited in multi-temperature zone tube furnace and completes；Zinc telluridse source is powdered zinc telluridse crystal, is placed in the upstream of air-flow and positioned at pipe
The center of one warm area bringing-up section of formula stove；The substrate of deposition zinc telluridse nano wire is placed in the downstream in zinc telluridse source and positioned at one
Between individual warm area bringing-up section center or two bringing-up sections；Multiple bringing-up sections heat up to ensure tubular type in-furnace temperature simultaneously in deposition process
It is evenly distributed constant, and ensures that source temperature maintains 780~900 DEG C, underlayer temperature maintains 380~450 DEG C, insulation 30
~90 minutes, prepare uniform flawless zinc telluridse nano wire；
Zinc telluridse used catalyst gold or bismuth are deposited, by electron beam evaporation or magnetron sputtering technique, is plated in for depositing
On the substrate of zinc telluridse, then the annealed particle for forming 25~100nm of diameter；The carrier gas of vapor transportation zinc telluridse uses high
Pure nitrogen gas, flow are accurately controlled in 50~200sccm by gas flowmeter, from zinc telluridse source stream to substrate；Substrate surface and gas
The air-flow for mutually transporting zinc telluridse is in 50 °~80 ° angles；
After the deposition of zinc telluridse nano wire is completed, tubular type furnace atmosphere is replaced into the gaseous mixture of oxygen and nitrogen, risen
Temperature simultaneously maintains 200~300 DEG C, insulation 2~20 hours.The surface of zinc telluridse nano wire forms zinc oxide film, while oxygen spreads
Enter zinc telluridse lattice, form oxygen doping telluride zinc layers.Three forms zinc oxide/oxygen doping zinc telluridse/zinc telluridse, and coaxially cladding is received
Nanowire structure.Zinc oxide/oxygen doping zinc telluridse/zinc telluridse coaxially coats nano-wire array by existing to zinc telluridse nano-wire array
Annealing is prepared under the mixed atmosphere of oxygen and nitrogen.
PDMS layer is prepared by Shooting Technique, is wrapped in the bottom of oxygen doping zinc telluridse nano wire, after injection, passes through oxygen
The top of nano wire is exposed in ion etching；The thickness of PDMS layer is defined by wrapping up nano-wire array.
N-type AZO photic zones thickness by pulsed laser deposition is 2~10 μm, AZO layers parcel oxygen doping zinc telluridse nanometer
The top of line, the light transmittance of AZO layers is more than 85%, and resistivity is 10-4Ω cm magnitudes are lower.
Oxygen doping zinc telluridse has Intermediate Gray energy level, can not only absorb the photon more than energy bandgaps, can also pass through
Valence band-Intermediate Gray, the electron transition mode of Intermediate Gray-conduction band absorb the less photon of energy, while nano thread structure causes
Photo-generate electron-hole significantly shortens to the drift distance under built-in electric field action, reduces the recombination probability of photo-generate electron-hole
So as to strengthen absorption conversion efficiency of the solar cell to light.
Beneficial effect：Doping zinc telluridse has Intermediate Gray energy level, can absorb photon with higher efficiency and produce electronics
Hole pair；Nano thread structure reduces the drift distance of photo-generated carrier simultaneously, reduces the recombination probability of photo-generated carrier, because
And the photoelectric transformation efficiency of this solar cell is far above traditional solar cell.The use of Intermediate Gray nano wire, phase in the present invention
For typical thin films absorbed layer, higher photoelectric transformation efficiency can have been obtained.Experiment shows the sun prepared by the above method
Battery, there is higher photoelectric transformation efficiency.
Brief description of the drawings
Solar battery structure schematic diagrames of the Fig. 1 based on oxygen doping zinc telluridse nano-wire array；Wherein A is stereogram, and B is to cut
Face figure.
Fig. 2 Intermediate Gray solar cell principle schematics.
Embodiment
Below in conjunction with the accompanying drawings, to the solar cell of the present invention based on oxygen doping zinc telluridse nano-wire array and preparation method thereof
It is described in detail：1st, nano wire (array)；2nd, n-type AZO transparency conducting layers；3rd, PMDS supporting layers；4th, p-type height leads silicon substrate.
As shown in fig.1, the solar cell of the invention based on oxygen doping zinc telluridse nano-wire array includes：By zinc oxide/
Oxygen doping zinc telluridse/zinc telluridse coaxial nanowire (array) 1, n-type AZO transparency conducting layers 2, dimethyl silicone polymer
(polydimethylsilaxone, PMDS) supporting layer 3, p-type height lead the solar battery structure of the composition of silicon substrate 4；Wherein n-type
AZO transparency conducting layers 2 wrap up the top of zinc oxide/oxygen doping zinc telluridse/zinc telluridse coaxial nanowire 1 and form contact, PMDS
Supporting layer wraps up the bottom of zinc oxide/oxygen doping zinc telluridse/zinc telluridse coaxial nanowire 1, zinc oxide/oxygen doping zinc telluridse/tellurium
Change zinc coaxial nanowire 1 is led the formation of silicon substrate 4 with p-type height and contacted, and n-type AZO transparency conducting layers 2 are grown on the table of PMDS supporting layers 3
Face, n-type AZO transparency conducting layers 2 and p-type height are led silicon substrate 4 and are connected respectively with electrode at work.
The course of work of the present invention is as follows：The solar cell course of work designed by the present invention is as follows：When sunshine irradiates
Under conditions of solar cell, AZO transparency conducting layers 2 can transmit most of sunshine to by zinc oxide/oxygen doping zinc telluridse/telluride
Zinc coaxial nanowire 1, the pin structures that zinc telluridse, oxygen doping telluride zinc layers and the zinc oxide film of nano wire are formed can absorb light
Son simultaneously produces electron hole pair, and electron hole pair drifts about to zinc oxide and zinc telluridse direction respectively under built-in electric field action.When
When electrode is connected and turned on external circuit, electronics and hole are via AZO transparency conducting layers 2 and the conduction of p-type silicon substrate 4 and outside
Circuit forms electric current.
Operating procedure is as follows：
1) preparation of catalyst
The silicon that catalyst gold or bismuth are plated in for depositing zinc telluridse is served as a contrast using electron beam evaporation or magnetron sputtering technique
On bottom, then annealed formation particle.
2) preparation of zinc telluridse nano-wire array
By step 1) prepare have catalyst substrate and zinc telluridse source as in multi-temperature zone tube furnace, using high pure nitrogen as
Carrier gas, using physical gas-phase deposite method, zinc telluridse nano wire is deposited on the silicon substrate for have catalyst granules.
3) zinc oxide/oxygen doping zinc telluridse/zinc telluridse coaxially coats the preparation of nano wire
Zinc telluridse nano wire prepared by step 2) is annealed under the mixed atmosphere of oxygen and argon gas, coaxially coated
Zinc oxide/oxygen doping zinc telluridse/zinc telluridse nano wire.
4) PMDS is injected
Zinc telluridse nano-wire array prepared by step 3) is wrapped up with PMDS using Shooting Technique.
5) oxygen rie
PMDS tip portions in 4) are removed using oxygen rie, expose the top of oxygen doping zinc telluridse nano-wire array
End, bottom is still wrapped in PMDS.
6) n-type AZO hyaline layers are prepared, the p-type silicon substrate for being loaded with oxygen doping zinc telluridse nano wire prepared by step 5) turns
Move in pulsed laser deposition equipment, prepare AZO transparency conducting layers.
The preparation method of solar cell of the invention based on oxygen doping zinc telluridse nano-wire array more specifically includes following
Step：
1) preparation of catalyst, catalyst gold or bismuth are plated in for sinking using electron beam evaporation or magnetron sputtering technique
On the silicon substrate of product zinc telluridse, then the annealed diameter 25 that formed is to 100nm particle.
2) preparation of zinc telluridse nano-wire array, by step 1) prepare have catalyst substrate and zinc telluridse source as more
In temperature-area tubular furnace, substrate has the one side face airflow direction of catalyst, i.e., substrate plane and caliber direction are in 50~80 ° of angles.
Boiler tube is carried out vacuumize more than three times-fill high pure nitrogen after, adjusted by gas flowmeter and air-flow and be maintained at 50~
200sccm.Then multiple warm areas heat up simultaneously, make zinc telluridse source temperature maintain 750~900 DEG C between certain fixed temperature,
Temperature maintains 380~450 DEG C at substrate, natural cooling after being incubated 30~90 minutes.The brick-red fine hair formed on substrate
Shape material is zinc telluridse nano-wire array.Preferable substrate angle is 60 °, and air-flow is 100sccm, and the temperature in zinc telluridse source is
780 DEG C, underlayer temperature is 400 DEG C, and soaking time is 60 minutes.
3) zinc oxide/oxygen doping zinc telluridse/zinc telluridse coaxially coats the preparation of nano wire, zinc telluridse prepared by step 2)
Nano wire is incubated 10~20 hours for 100~300 DEG C under the gaseous mixture atmosphere of nitrogen and oxygen, the zinc telluridse coaxially coated
Nano wire.Gaseous mixture is preferably in a proportion of nitrogen：Oxygen (volume ratio)=4:1, preferable temperature is 250 DEG C, and the time is 16 hours.
4) PMDS is injected, is wrapped up zinc telluridse nano-wire array prepared by step 3) with PMDS using Shooting Technique, PMDS
The thickness of layer is defined by that can wrap up nano-wire array just.
5) oxygen rie, PMDS tip portions in 4) is removed using oxygen rie, exposes oxygen doping zinc telluridse and receives
The top of nanowire arrays, bottom are still wrapped in PMDS.
6) n-type AZO hyaline layers are prepared
The p-type silicon substrate for being loaded with oxygen doping zinc telluridse nano wire prepared by step 5) is transferred to pulsed laser deposition equipment
In, 10-5~10-3Torr oxygen is calmed the anger and excites AZO targets 5 × 10 under atmosphere4~2 × 105It is secondary, laser emitting energy 200~
Between 400mJ, frequency prepares n-type AZO transparency conducting layers between 1~20Hz.Preferable oxygen pressure is 10-4Torr, excite
Number is 8 × 104, energy 250mJ, frequency is 10Hz.
The embodiment of the present invention is the foregoing is only, but the protection domain of patent of the present invention is not limited thereto,
Any one skilled in the art the change that can readily occur in or replaces in the technical scope of patent diselosesll of the present invention
Change, should all be included within the scope of the present invention.
Claims (3)
1. a kind of solar cell preparation method, it is characterized in that solar cell is based on oxygen doping zinc telluridse nano-wire array, from upper
It is followed successively by under and：The n-type on the nano-wire array top that zinc oxide/oxygen doping zinc telluridse/three layers of zinc telluridse coaxially coats is wrapped up
AZO transparent conductive film, zinc oxide/oxygen doping zinc telluridse/three layers of the zinc telluridse nano-wire array coaxially coated, parcel nano wire
PMDS supporting layers and p types the doping height of bottom lead monocrystalline silicon layer substrate, utilize zinc oxide/oxygen doping with Intermediate Gray characteristic
Three layers of nano-wire array coaxially coated of zinc telluridse/zinc telluridse are as photoelectric absorption layer；Mixed in AZO transparent conductive film and p types
Miscellaneous height leads monocrystalline silicon layer difference extraction electrode；
Oxygen doping zinc telluridse nano-wire array is highly 5 ~ 10 μm, nanowire diameter 100-300nm, oxygen in oxygen doping zinc telluridse
Diffusing, doping concentration is 1-5%, and thickness of diffusion layer is in 20 ~ 100nm；Zinc telluridse thickness is 10 ~ 50nm；Zinc oxide, oxygen doping telluride
Zinc, zinc telluridse three form coaxial clad structure, and zinc oxide is in outermost layer；Per on square micron of substrate surface it is observed that oxygen
Zinc telluridse number of nanowires is adulterated more than 2；
The physical vapour deposition (PVD) of zinc oxide/oxygen doping zinc telluridse/three layers of nano-wire array coaxially coated of zinc telluridse is in multi-temperature zone
Completed in tube furnace；Zinc telluridse source is powdered zinc telluridse crystal, is placed in the upstream of air-flow and positioned at a temperature of tube furnace
The center of area's bringing-up section；The substrate of deposition zinc telluridse nano wire is placed in the downstream in zinc telluridse source and is located at a warm area bringing-up section
Between center or two bringing-up sections；Multiple bringing-up sections heat up to ensure that uniformity of temperature profile is permanent in tube furnace simultaneously in deposition process
It is fixed, and ensure that source temperature maintains 780 ~ 900 DEG C, underlayer temperature maintains 380 ~ 450 DEG C, is incubated 30 ~ 90 minutes, prepares
Go out uniform flawless zinc telluridse nano wire；
Zinc telluridse used catalyst gold or bismuth are deposited, by electron beam evaporation or magnetron sputtering technique, is plated in for depositing telluride
On the substrate of zinc, then the annealed particle for forming 25 ~ 100nm of diameter；The carrier gas of vapor transportation zinc telluridse uses High Purity Nitrogen
Gas, flow are accurately controlled in 50 ~ 200sccm by gas flowmeter, from zinc telluridse source stream to substrate；Substrate surface and vapor transportation
The air-flow of zinc telluridse is in 50 ° ~ 80 ° angles；
After the deposition of zinc telluridse nano wire is completed, tubular type furnace atmosphere is replaced into the gaseous mixture of oxygen and nitrogen, heating is simultaneously
200 ~ 300 DEG C are maintained, insulation obtains oxygen doping zinc telluridse in 2 ~ 20 hours；Zinc oxide/oxygen doping zinc telluridse/zinc telluridse coaxially wraps
Nano-wire array is covered to be prepared by annealing to zinc telluridse nano-wire array under the mixed atmosphere of oxygen and nitrogen.
2. solar cell preparation method according to claim 1, it is characterized in that PDMS layer is prepared by Shooting Technique, parcel
In the bottom of oxygen doping zinc telluridse nano wire, after injection, the top of nano wire is exposed by oxygen rie；The thickness of PDMS layer
Degree is defined by wrapping up nano-wire array.
3. solar cell preparation method according to claim 1, it is characterized in that saturating by the n-type AZO of pulsed laser deposition
Photosphere thickness is 2 ~ 10 μm, and AZO layers wrap up the top of oxygen doping zinc telluridse nano wire, and the light transmittance of AZO layers is more than 85%, electricity
Resistance rate is 10-4Ω cm magnitudes are lower.
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| Effect of oxygen implantation on microstructural and optical properties of ZnTe:O intermediate-band photovoltaic materials;Zhen,K et al.;《ACTA PHYSICA SINICA》;20141210;第63卷(第23期);全文 * |
| The study of electronic structure and absorption coefficient of ZnTe:O alloys: A GGA+U method;Kongping Wu et al.;《 Computational Materials Science》;20150725;第109卷;全文 * |
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