CN106098503B - A kind of graphene ribbon-like electron note field emission cold-cathode and its production method - Google Patents

A kind of graphene ribbon-like electron note field emission cold-cathode and its production method Download PDF

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CN106098503B
CN106098503B CN201610564355.2A CN201610564355A CN106098503B CN 106098503 B CN106098503 B CN 106098503B CN 201610564355 A CN201610564355 A CN 201610564355A CN 106098503 B CN106098503 B CN 106098503B
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graphene
cathode
layer
substrate
film
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CN106098503A (en
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柳建龙
杨锦标
曾葆青
宋林川
吴喆
黎晓云
傅文杰
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Shenzhen Yixin Technology R & D Co Ltd
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/02—Electron-emitting electrodes; Cathodes
    • H01J19/24—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/06—Cathodes
    • H01J35/065—Field emission, photo emission or secondary emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30461—Graphite
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2209/00—Apparatus and processes for manufacture of discharge tubes
    • H01J2209/02—Manufacture of cathodes
    • H01J2209/022—Cold cathodes
    • H01J2209/0223—Field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00—X-ray tubes
    • H01J2235/06—Cathode assembly
    • H01J2235/062—Cold cathodes

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  • Cold Cathode And The Manufacture (AREA)

Abstract

The invention belongs to graphene ribbon-like electron note field emission cold-cathode and its production method.Cold cathode includes substrate and metal film electrode thereon, each graphene field emission body and set on therebetween and the dielectric enhancement layer of top layer；Production method is：The processing of substrate, the preparation of graphene film, the setting of metal film electrode, the transfer of graphene, the making of single layer and multi-layer graphene ribbon-like electron note field emission cold-cathode.Invention setting metal film electrode, the emitter for being made cold cathode using graphene, transmitting terminal will produce extremely strong point effect by cutting under extra electric field, not only improve the operating voltage for improving emission current and being effectively reduced field-transmitting cathode；Thus with the unlatching field and threshold field that can effectively reduce ribbon-like electron note cold cathode, emission current is big, power is high, launch stability is good for electronics note, small and simple production process, production efficiency are high and the features such as can ensure that the consistency of device performance, be easy to industrialized production.

Description

A kind of graphene ribbon-like electron note field emission cold-cathode and its production method
Technical field
The invention belongs to microwave vacuum electronic component and its production technical field, especially a kind of graphene ribbon-like electron Note field emission cold-cathode and the producer of the cold cathode.
Background technology
Electron emission source of the vacuum electron device cathode as vacuum electron device is the important portion of vacuum electron device Part.Most of current vacuum electron device is using hot cathode, including pure metalic cathode, carbonized thoriated tungsten carthode, oxide Cathode, barium-tungsten dispense cathode etc..These hot cathode big, steady performance with emission, but this hot cathode is solid Internal electronics cannot escape in solid when there is no enough energy excitations.The method that heating can only be used makes solid The kinetic energy of body internal electron increases, and the kinetic energy of electronics is made to be large enough to overcome surface potential barrier and escape the surface of solids, forms transmitting； Thus such hot cathode is there are heating power consumption is big, and preheating, cooling time are long, and volume is larger, and the hot spoke generated in use The defects of penetrating the device that can also damage surrounding.
Field emission cold-cathode have many advantages, such as high efficiency, low-power consumption, small size, without preheating, be vacuum electron device reason The electron source thought, it is considered to be instead of the next-generation cathode of hot cathode.Nano material field emission cold-cathode is in Flied emission at present Flat-panel screens, x-ray source, novel energy-saving environment-friendly light source and microwave vacuum electrode device etc. have obtained preliminary application. Meanwhile noting vacuum device to be applied to the ribbon-like electrons such as ribbon-like electron traveling wave, backward wave oscillator, free-electron laser In, and to adapt to the development trend of vacuum device miniaturization, cathode must obtain larger and stablize electricity in the region of very little The ribbon-like electron of current density is noted.The electronics note that current barium-tungsten dispense cathode generates is that column electronics is noted, and current density is smaller, cannot Meet the development of present vacuum electron device.Ribbon-like electron note device can emit larger electric current using minimum lateral dimension, Make ribbon-like electron note device that there is higher gain；Space charge effect is also reduced simultaneously, is conducive to be integrated into cavity very little Vacuum device in.It is entitled in Patent No. CN103745900A《It is band-like for generating in a kind of vacuum electron device The cathode of electronics note》, the Invention Announce one notes cathode using the ribbon-like electron of conductor sheet (blade-like), made of conductor It backflows clinohedral, there are two inclined-planes for clinohedral tool, connects with the rear end of conductor sheet, and junction is to backflow to control inclined-plane Front end.When applying certain high voltage to the cathode of the invention, since conductor sheet front end electric field strength is big, by electronics from conductor It is pulled out on thin slice and forms ribbon-like electron note, to realize the transmitting of ribbon-like electron note；But there are the thickness of conductor sheet for the invention It spends thicker (in millimeter magnitude), can neither be used to manufacture flexible (flexible) electronics note field emission cold-cathode, can not lead to It crosses and several conductor sheet overlay and parallel connections is improved into output power, thus its output work in a manner of forming several ribbon-like electron notes Rate is also limited.
Invention content
The purpose of the present invention is be directed to defect existing for background technology, a kind of graphene ribbon-like electron note of developmental research field hair Penetrate cold cathode and its production method.To reach the unlatching field and the threshold field that reduce ribbon-like electron and note cold cathode, emission current is big, work( Rate is high, launch stability is good, small, and the consistency for simplifying production technology, improving production efficiency, ensuring device performance, The purpose of being easy to industrialized production.
The solution of graphene ribbon-like electron of the present invention note field emission cold-cathode is：Using graphene film as cold the moon The field emission body of pole, because graphene is made of the two dimensional crystal of the honeycomb-like monoatomic layer of hexangle type, base carbon atom This structural unit is most stable of benzene hexatomic ring in organic material；Theoretically, the electron mobility of graphene can reach 2 × 105cm2/ Vs shows outstanding electric conductivity；Meanwhile the thickness of graphene in 1nm hereinafter, than nanometer wall and other structures Cathode will be thin, and graphene has more emission edges (launch point) compared with other kinds of edge emitters, these hairs It penetrates edge and will produce extremely strong point effect under extra electric field, not only improve and improve emission current and field can be effectively reduced The operating voltage of emitting cathode.The present invention makees substrate using the conductive material of insulating substrate or covering insulating layer, due to graphene For the film of atomic-level thickness, because contact resistance is larger, can influence graphene ribbon-like electron if it is directly connect with electrode The stability of transmission is noted, thus metal film electrode is arranged in the present invention on substrate, and graphene film is then covered (transfer) again To the surface of substrate and metal film electrode, then (plating) one layer of dielectric is set in the graphene upper surface at face substrate position again As the insulating layer between enhancement layer and each graphene layer, the graphene ribbon-like electron to which single layer emitter be made notes Flied emission Cold cathode；If alternately covering one layer of graphite successively again in the graphene of single layer emitter cold cathode and the upper surface of insulating medium layer Alkene film and insulating medium layer, you can the graphene ribbon-like electron note Flied emission that two layers of emitter of band and multilayer emitter is made is cold Cathode；The present invention realizes its goal of the invention with this.Therefore, graphene ribbon-like electron note field emission cold-cathode of the present invention includes exhausted The conductive material substrate of edge substrate or upper surface covering insulating layer, field emission body, key are also to set on rear side of substrate upper surface There is a metal film electrode, (covering) one or more layers graphene film conduct is additionally provided in the upper surface of substrate and metal film electrode Field emission body；Wherein：When only setting a layer graphene film in the upper surface of substrate and metal film electrode, at face substrate position Graphene on be additionally provided with a dielectric enhancement layer, when the upper surface of substrate and metal film electrode setting multi-layer graphene it is thin When film, sets between each graphene film layer at face substrate position and respectively a dielectric on top layer graphene film and add Strong layer, and be then mutually close between each graphene film layer at face metal film electrode position integrally and by bottom graphite Alkene film is connected with metal film electrode.
The metal film electrode is gold, silver, copper, aluminium or nickel metal film electrode.And it is described in substrate and metal film electrode Upper surface is additionally provided with one or more layers graphene film as field emission body, and 1nm is respectively less than per the thickness of layer graphene film, when When multi-layer graphene film is arranged as field emission body, the number of plies of graphene film is 2-6 layers.
The present invention is for the consistency that simplifies production technology, improve production efficiency, ensure device performance, and reduces and be produced into This, each field emission cold-cathode of the present invention using symmetrical, more than one piece it is Integratively formed after it is cleaved again made of mode produce；I.e.： Metal film is placed in the both sides (rear side of i.e. each field emission cold-cathode) of substrate surface as each cold the moon by coating process The electrode of pole, transmitting terminal can effectively improve its field emission characteristic by cutting；Using chemical vapour deposition technique in metal The graphene grown, is then transferred to the upper surface of substrate and metal film electrode, then just by foil Grown graphene To an insulating medium layer is arranged on the graphene at substrate position, longitudinal or vertical-crosscutting cut up to 2 or 2 is then carried out Several graphene ribbon-like electrons with single layer emitter note field emission cold-cathode again；If utilizing same method again before cutting A layer graphene, one insulating medium layer of setting or the transfer of alternately multiple graphene and setting for insulating medium layer are shifted successively It postpones, then cuts the graphene ribbon-like electron note field emission cold-cathode that can be prepared by having two layers or corresponding number of plies emitter.
Thus the production method of graphene ribbon-like electron note field emission cold-cathode of the present invention includes：
The processing of step 1 substrates：The conductive material substrate of selected insulating substrate or tape insulation layer is cleaned, is done After dry processing, for use；
The preparation of step 2 graphene films：Metal foil is placed in tube furnace first, in H2Protective atmosphere and 1030- To remove the oxide of metal foil surface and make its crystal grain swell under 1100 DEG C of temperature conditions；Then in H2CH is passed through in atmosphere4, Work as CH4Metal foil surface being adsorbed on through metal foil after cracking and forming the graphene film that thickness is less than 1nm, graphite is obtained after cooling Alkene/metal foil is for use；
The preparation of step 3 metal film electrodes：In one layer of gold of both sides point plating through step 1 treated substrate upper surface Belong to film as the conductive electrode on rear side of each field emission cold-cathode, the substrate with metal film electrode is made；
The transfer of step 4 graphenes：The graphene surface spin coating one of graphene/metal foil is obtained obtained by step 2 first Layer PMMA (photoresist) film, then place it in heater box and heated at 80-100 DEG C PMMA film/graphene/copper foil is made Body；The sheet body of gained PMMA film/graphene/metal foil is placed in etching solution again to remove metal foil, shift graphene After on to PMMA (photoresist) film, then cleaned PMMA film/graphene sheet body, it then will be on PMMA film/graphene sheet body Graphene is affixed on the upper surface of the electrode and substrate on substrate obtained by step 3, then the PMMA film/graphene/substrate is integrally put Enter in heater box, heats 1-2h at a temperature of 90-120 DEG C, graphene is made to be tightly attached on substrate, finally place it in acetone To remove PMMA (photoresist) film, the single layer emitter basic part containing substrate/electrode/graphene is obtained；
Step 5 single-layer graphene ribbon-like electrons note the making of field emission cold-cathode：A. coating process (magnetron sputtering is used Or thermal oxidation method) the graphene surface face substrate surface position in the single layer emitter basic part obtained by step 4 plates one layer absolutely Edge medium enhancement layer obtains the cold cathode basic part containing substrate/electrode/graphene/dielectric enhancement layer；
B. cold cathode basic part obtained by a. is longitudinally cutting or after vertical-crosscutting cut along the plane of symmetry, to be made with single layer The graphene ribbon-like electron of emitter notes field emission cold-cathode；
Step 6 multi-layer graphene ribbon-like electrons note the making of field emission cold-cathode：The base obtained by step 5 .a. successively It first shifts a layer graphene, plate one layer of insulation again in the upper surface of the cold cathode basic part of piece/electrode/graphene/insulating medium layer Medium enhancement layer；The cold cathode basic part of the required number of plies can be made by repeating the step；Gained cold cathode basic part is pressed into step 5 .b. mode is cut notes field emission cold-cathode to get the graphene ribbon-like electron of the required emitter number of plies.
In H described in step 22CH is passed through in atmosphere4, work as CH4After cracking metal foil surface shape is adsorbed on through metal foil At graphene film, be passed through CH4Amount be H21/30-1/60, CH of tolerance4Cracking temperature is not less than 850 DEG C.
The both sides plating layer of metal film of the substrate upper surface described in step 3, which is used as, to be located on rear side of each field emission cold-cathode Conductive electrode, metal film is gold, silver, copper, aluminium or nickel metal film, and the thickness of metal film is 100nm-5 μm, width 3-5mm, 2mm-4mm is divided between two metal films, coating process is magnetron sputtering or vacuum evaporation.
The stone described in rapid five .a. plates one layer of dielectric enhancement layer, insulation at black alkene surface face substrate surface position The material of medium enhancement layer is magnesia, aluminium oxide or silica, the thickness of dielectric enhancement layer be 20-100nm, area not More than the area at the graphene surface face substrate surface position, plating process is magnetron sputtering or thermal oxidation method.
The multi-layer graphene ribbon-like electron described in rapid six notes field emission cold-cathode, and the number of plies of graphene is 2- in cold cathode 6 layers.
The present invention notes the emitter of field emission cold-cathode using graphene as ribbon-like electron, is sent out with other kinds of edge Beam has more emission edges (launch point) compared to graphene, and transmitting terminal is by cutting in addition, under extra electric field Extremely strong point effect is will produce, the operating voltage for improving emission current and field-transmitting cathode being effectively reduced is not only improved； Then graphene film is covered in the table of substrate and metal film electrode by the present invention again using metal film electrode is arranged on substrate Face, to improve the stability of ribbon-like electron note transmitting；In addition, graphene and warp of the present invention using chemical vapour deposition technique preparation High-temperature process, defect is few, good conductivity, can carry out high current transmitting, and film stacking also can be used in field emission cold-cathode Mode parallel connection number layer graphene emitter carrys out output high-power.Thus, the present invention notes cold the moon with can effectively reduce ribbon-like electron The unlatching field of pole and threshold field, emission current is big, power is high, and ribbon-like electron note launch stability is good, small, and production work Skill is simple, production efficiency is high and the features such as can ensure that the consistency of device performance, be easy to industrialized production.
Description of the drawings
Fig. 1 is the structural schematic diagram of the cold cathode basic part of emitter containing single layer；In figure：1 is Si pieces, 1-1 SiO2Layer, 2 For metal electrode, 3-1 is graphene, and 4-1 is dielectric enhancement layer；Line of symmetry (chain-dotted line) in figure is also cutting line；
Fig. 2 is that the graphene ribbon-like electron of the emitter containing single layer notes field emission cold-cathode structural schematic diagram, the arrow in figure For electron emission direction；
Fig. 3 is the structural schematic diagram containing three layers of emitter cold cathode basic part；In figure：1 is Si pieces, 1-1 SiO2Layer, 2 For metal electrode, 3-1,3-2,3-3 are graphene, and 4-1,4-2,4-3 are dielectric enhancement layer；Line of symmetry (click and sweep in figure Line) also it is cutting line；
Fig. 4 is that the graphene ribbon-like electron containing three layers of emitter notes field emission cold-cathode structural schematic diagram, and arrow is in figure Electron emission direction；
Fig. 5 is the structural schematic diagram using insulating substrate and three layers of emitter cold cathode basic part；In figure：1 is insulation base Piece, 2 be metal electrode, and 3-1,3-2,3-3 are graphene, and 4-1,4-2,4-3 are dielectric enhancement layer, the line of symmetry in figure (chain-dotted line) is also cutting line；
Fig. 6 is to note field emission cold-cathode structural representation using the graphene ribbon-like electron of insulating substrate and three layers of emitter Scheme, arrow is electron emission direction in figure；
Fig. 7 is that the graphene ribbon-like electron of 1 emitter containing single layer of embodiment notes the test design sketch of field emission cold-cathode, horizontal Coordinate is E (electric field), and ordinate is J (electric current).
Specific implementation mode
Embodiment 1
The present embodiment covers SiO once to produce two using the surfaces Si2SiO2/ Si is thin as substrate, a layer graphene For film is as the ribbon-like electron note field emission cold-cathode of emitter, production method is：
Step 1 is by SiO2/ Si substrates are cleaned, be dried after, for use；
The preparation of step 2 graphene films：The copper foil of 25 μ m-thicks is placed in a diameter of 5cm first, length is 100cm's In tube furnace, in H2After being heated to 1030 DEG C and constant temperature 1.5h under protective atmosphere, it is passed through H again2The CH of amount 1/504, in 900 DEG C of temperature Make CH under degree4Cracking, CH4Metal foil surface is adsorbed on through copper foil after cracking and forms the graphene film that thickness is less than 1nm, with stove Cut growth × width is that graphene/copper foil blocks of 2.2 × 2cm are spare after cooling；
The preparation of step 3 metal film electrodes：The SiO obtained by step 12The length direction both side ends of/Si substrate upper surfaces Respectively one thickness of plating be 200nm, longitudinally long 2cm (i.e. equal with the width of copper foil), gold (Au) film that width is 2mm be as each Flied emission Electroded substrate is made in conductive electrode on rear side of cold cathode, and the electroded substrate upper surface is in addition to two electrodes, more than the institute of middle part Substrate surface area is 1.8 × 2cm；
The transfer of step 4 graphenes：First, one piece is taken to handle for use graphene/copper foil blocks through step 2, then will be dense Degree is PMMA (photoresist) solution of 40mg/ml, is spin-coated on the graphene table of graphene/copper foil blocks with the rotating speed of 3000r/min Then face is placed in drying box heating 10min at a temperature of 100 DEG C, form PMMA films/graphene/copper foil；Again will PMMA films/graphene/copper foil body of gained is placed in ammonium persulfate solution to remove copper foil (eroding copper foil), thus will Graphene is transferred on PMMA films, cleans deacidification through deionized water, obtains PMMA films/graphene；Then by PMMA films/stone After graphene on black alkene is affixed on the electrode and substrate upper surface of substrate obtained by step 3, then by gained PMMA films/graphene/ Electrode/substrate body is put into 120 DEG C of drying box and heats 1h so that graphene is close to substrate, electrode, finally that PMMA is thin Film/graphene/electrode/substrate body is put into 50 DEG C of acetone to remove PMMA films；The list of substrate/electrode/graphene must be contained Layer emitter basic part；
Step 5 graphene ribbon-like electrons note the making of field emission cold-cathode：A. use magnetron sputtering membrane process in step It is that 30nm, area are about that a layer thickness is plated in the graphene upper surface at face substrate position in rapid four gained single layer emitter basic part The SiO of 1.79 × 2cm2Layer is used as dielectric enhancement layer, obtains cold the moon containing substrate/electrode/graphene/dielectric enhancement layer Pole basic part (Fig. 1 is the structural schematic diagram of cold cathode basic part)；B. finally gained cold cathode basic part is cut using machinery It cuts method and cuts into the identical two parts of structure along the plane of symmetry, the graphene ribbon-like electron to which two single layer emitters be made notes field Emit cold cathode (Fig. 2 is the structural schematic diagram of the field emission cold-cathode).
Fig. 7 is the test design sketch of the present embodiment single layer emitter graphene ribbon-like electron note field emission cold-cathode, In：Abscissa is E (electric field), ordinate is J (electric current).
Embodiment 2
The present embodiment is by taking the ribbon-like electron note field emission cold-cathode for making emitter using three layer graphene of band as an example, method For：
Step 1: two, three, four is same as Example 1；
Step 5 .a. uses face substrate portion in magnetron sputtering membrane process single layer emitter basic part obtained by step 4 Plate the SiO that a layer thickness is 30nm, area is about 1.79 × 2cm in the graphene upper surface of position2Layer is used as dielectric enhancement layer, The cold cathode basic part of substrate/electrode/graphene/dielectric enhancement layer must be contained；
Step 6 multilayer emitter graphene ribbon-like electrons note the making of field emission cold-cathode：Successively in step 5 .a. institutes On the basis of the cold cathode basic part that substrate/electrode/graphene/dielectric enhancement layer must be contained；The method for pressing step 4 again will Second layer graphene is tightly attached to the SiO of the cold cathode basic part2The upper surface of layer and graphene, obtains containing substrate/electrode/graphite The double-deck emitter basic part of alkene/dielectric enhancement layer/graphene；The method of step 4 is pressed again on the bilayer emitter basis Plate one layer of its thickness and first layer SiO in the upper surface of part2The SiO that layer is identical, area is about 1.78 × 2cm2Layer, obtains containing substrate/electricity The cold cathode basic part of pole/graphene/dielectric enhancement layer/graphene/dielectric enhancement layer；In the cold cathode basic part Upper surface press the method setting third layer graphene and third layer dielectric enhancement layer of step 4 successively, obtain and emit containing three layers The cold cathode basic part of body graphene (Fig. 3 is the structural schematic diagram of the cold cathode basic part)；Finally by gained cold cathode base Plinth part cuts into the identical two parts of structure using machine cuts method along the plane of symmetry, to which two three layer graphene of band transmittings be made The ribbon-like electron note field emission cold-cathode of body (Fig. 4 is the structural schematic diagram of the field emission cold-cathode).
Embodiment 3
The present embodiment is to make substrate using flexible insulating material and set the ribbon-like electron note field hair of three layer graphene emitters It penetrates for cold cathode：
Step 1 makees substrate 1 using Kapton piece, and after the substrate is cleaned, being dried, for use；
Remaining is Step 2: three, four, five, six is same as Example 2；Fig. 5, Fig. 6 are respectively the present embodiment step 5 institute It obtains the structural schematic diagram of cold cathode basic part and makees the band of substrate and three layer graphene emitter of band using flexible insulating material Shape electronics notes field emission cold-cathode structural schematic diagram.

Claims (8)

1. a kind of graphene ribbon-like electron notes field emission cold-cathode, include the conduction material of insulating substrate or upper surface covering insulating layer Expect substrate, field emission body, it is characterised in that a metal film electrode is additionally provided on rear side of substrate upper surface, in substrate and metal film electricity The upper surface of pole is additionally provided with one or more layers graphene film as field emission body；Wherein：When in substrate and metal film electrode A dielectric enhancement layer is additionally provided with when upper surface only sets a layer graphene film, on the graphene at face substrate position, when When multi-layer graphene film is arranged in the upper surface of substrate and metal film electrode, each graphene film layer at face substrate position Between and top layer graphene film on respectively set a dielectric enhancement layer, and in each graphite at face metal film electrode position Then mutually it is close to integral between alkene film layer and is connected by bottom graphene film and metal film electrode.
2. noting field emission cold-cathode by graphene ribbon-like electron described in claim 1, it is characterised in that the metal film electrode is Gold, silver, copper, aluminium or nickel metal film electrode.
3. noting field emission cold-cathode by graphene ribbon-like electron described in claim 1, it is characterised in that described in substrate and metal The upper surface of membrane electrode is additionally provided with one or more layers graphene film as field emission body, and the thickness per layer graphene film is small In 1nm, when multi-layer graphene film is arranged as field emission body, the number of plies of graphene film is 2-6 layers.
4. the production method of graphene ribbon-like electron note field emission cold-cathode described in claim 1, including：
The processing of step 1 substrates：The conductive material substrate of selected insulating substrate or tape insulation layer is cleaned, dries place After reason, for use；
The preparation of step 2 graphene films：Metal foil is placed in tube furnace first, in H2Protective atmosphere and 1030-1100 DEG C To remove the oxide of metal foil surface and make its crystal grain swell under temperature condition；Then in H2CH is passed through in atmosphere4, work as CH4It splits Metal foil surface being adsorbed on through metal foil after solution and forming the graphene film that thickness is less than 1nm, graphene/metal foil is obtained after cooling For use；
The preparation of step 3 metal film electrodes：In the both sides point plating layer of metal film through step 1 treated substrate upper surface As the conductive electrode on rear side of each field emission cold-cathode, the substrate with metal film electrode is made；
The transfer of step 4 graphenes：One layer of the graphene surface spin coating of graphene/metal foil is obtained obtained by step 2 first PMMA film, then place it in heater box and heated at 80-100 DEG C PMMA film/graphene/metal foil sheet body is made；Again will The sheet body of gained PMMA film/graphene/metal foil is placed in etching solution to remove metal foil, transfer graphene to PMMA film After upper, then cleaned PMMA film/graphene sheet body, the graphene on PMMA film/graphene sheet body is then affixed on step 3 The upper surface of electrode and substrate on gained substrate, then the PMMA film/graphene/substrate is integrally put into heater box, in 90- 1-2h is heated at a temperature of 120 DEG C, graphene is made to be tightly attached on substrate, finally places it in acetone to remove PMMA film, obtains Single layer emitter basic part containing substrate/electrode/graphene；
Step 5 single-layer graphene ribbon-like electrons note the making of field emission cold-cathode：A. use coating process obtained by step 4 One layer of dielectric enhancement layer is plated at graphene surface face substrate surface position in single layer emitter basic part, obtain containing substrate/ The cold cathode basic part of electrode/graphene/dielectric enhancement layer；
B. cold cathode basic part obtained by a. is longitudinally cutting or after vertical-crosscutting cut along the plane of symmetry, to which band single layer transmitting be made The graphene ribbon-like electron of body notes field emission cold-cathode；
Step 6 multi-layer graphene ribbon-like electrons note the making of field emission cold-cathode：Substrate/electricity obtained by step 5 .a. successively It first shifts a layer graphene, plate one layer of insulation Jie again in the upper surface of the cold cathode basic part of pole/graphene/dielectric enhancement layer Matter enhancement layer；The cold cathode basic part of the required number of plies can be made by repeating the step；Gained cold cathode basic part is pressed into step 5 .b. Mode cut to get the required emitter number of plies graphene ribbon-like electron note field emission cold-cathode.
5. the production method of graphene ribbon-like electron note field emission cold-cathode described in claim 4, it is characterised in that in step 2 Described in H2CH is passed through in atmosphere4, work as CH4Metal foil surface is adsorbed on through metal foil after cracking and forms graphene film, lead to Enter CH4Amount be H21/30-1/60, CH of tolerance4Cracking temperature is not less than 850 DEG C.
6. the production method of graphene ribbon-like electron note field emission cold-cathode described in claim 4, it is characterised in that in step 3 Described in substrate upper surface both sides plate layer of metal film, metal film be gold, silver, copper, aluminium or nickel metal film, the thickness of metal film Degree is 100nm-5 μm, width 3-5mm, between two metal films between be divided into 2mm-4mm, coating process is magnetron sputtering or true Sky vapor deposition.
7. the production method of graphene ribbon-like electron note field emission cold-cathode described in claim 4, it is characterised in that in rapid five .a. Described on the surface of graphene face substrate surface position plate one layer of dielectric enhancement layer, the material of dielectric enhancement layer is Magnesia, aluminium oxide or silica, the thickness of dielectric enhancement layer is 20-100nm, area is being not more than the graphene surface just To the area at substrate surface position, plating process is magnetron sputtering or thermal oxidation method.
8. the production method of graphene ribbon-like electron note field emission cold-cathode described in claim 4, it is characterised in that in rapid six The multi-layer graphene ribbon-like electron notes field emission cold-cathode, and the number of plies of graphene is 2-6 layers in cold cathode.
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