CN106096709B - A kind of flow of the people sensor for countering and preparation method thereof - Google Patents

A kind of flow of the people sensor for countering and preparation method thereof Download PDF

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Publication number
CN106096709B
CN106096709B CN201610471069.1A CN201610471069A CN106096709B CN 106096709 B CN106096709 B CN 106096709B CN 201610471069 A CN201610471069 A CN 201610471069A CN 106096709 B CN106096709 B CN 106096709B
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film layer
flow
thermal insulation
countering
organic
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CN106096709A (en
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黄鸿
高俊
饶敬梅
董保志
夏磊
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Yunnan Ruibo Detection Technology Ltd By Share Ltd
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Yunnan Ruibo Detection Technology Ltd By Share Ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06MCOUNTING MECHANISMS; COUNTING OF OBJECTS NOT OTHERWISE PROVIDED FOR
    • G06M1/00Design features of general application
    • G06M1/02Housing
    • G06M1/022Plates
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06MCOUNTING MECHANISMS; COUNTING OF OBJECTS NOT OTHERWISE PROVIDED FOR
    • G06M1/00Design features of general application
    • G06M1/27Design features of general application for representing the result of count in the form of electric signals, e.g. by sensing markings on the counter drum

Abstract

The invention discloses a kind of flow of the people sensor for countering and preparation method thereof, including silicon substrate and the multiple pyroelectricity units being set on silicon substrate, each pyroelectricity unit includes the organic boss of thermal insulation, it is set to the lower electrode of the organic boss upper surface of thermal insulation, side and silicon substrate upper surface, the film layer being set on lower electrode, the top electrode being set in film layer.Flow of the people sensor for countering provided by the invention only has the characteristics of response to the target of movement using pyroelectricity unit, prepare the flow of the people count detection sensor of multiple pixels, the disengaging for the direction determining personnel that the sensor is moved by detection personnel, in this way sensor inherently have personnel count and direction determining function, participation without memory and CPU, the requirement to attached ray machine electric equipment is reduced, application cost is greatly reduced.

Description

A kind of flow of the people sensor for countering and preparation method thereof
Technical field
The invention belongs to people flow rate counting device technical fields, and in particular to a kind of flow of the people sensor for countering and its production Method.
Background technique
In today of commercial competition fierceness, effective commercial management trade marketing success or failure key factor.How scientific, Effectively carried out to the volume of the flow of passengers time, spatially analyzed, and quickly makes business decision in time to become business, retail business marketing mould The vital effect of formula improves market competitiveness.
People flow rate statistical, which is counted, can compare the different times volume of the flow of passengers by counting the volume of the flow of passengers of each entrance in market, can To assess the reasonability of marketing, promotion strategy;Changed according to the volume of the flow of passengers, it is more effective to distribute property management, maintenance personnel and security protection Personnel;Electric power, human resources adjustment are carried out according to the reasonable quantity for being detained customer in market, controls market operation cost;Display Current volume of the flow of passengers state and variation tendency, administrative staff can the region bigger to flow take arranging for prevention emergency event It applies, and the effective strength etc. that implementable observation market is current.Many administrators have had appreciated that volume of the flow of passengers data For the importance of Analysis of Policy Making.
It is mainly visible light video image processing and infrared unit to pipe that current flow of the people, which counts implementation, and the two is each There is superiority and inferiority.The former implementation is more complicated, is related to the application of image procossing and intelligent recognition algorithm, to vision hardware and soft Part it is more demanding, being capable of not large-scale popularization and application due to cost.The latter's cost is slightly lower, and operating mode compares Simply, judgement flow of the people is carried out to the direction of the on-off of pipe and on-off using infrared unit, but in densely populated place Region, while the spatial disparity of the personnel passed in and out is smaller, causes to judge by accident more.
Also there is personnel's counting mode of the single step rotation control of mechanical system in the market, this mode is not in erroneous judgement, And it can link with charging system, but in the application for requiring and be post-paid to stream of people's speed, such as restaurant, Market is just not suitable for.
Summary of the invention
The first object of the present invention is to provide a kind of of simple structure and low cost and can effectively detect specific region The sensor of flow of the people;The second object of the present invention is to provide a kind of method for making the flow of the people sensor for countering.
The first object of the present invention is achieved in that stream of people's quantity sensor includes silicon substrate and is set to silicon substrate On multiple pyroelectricity units, each pyroelectricity unit includes the organic boss of thermal insulation, is set to the organic boss of thermal insulation The lower electrode of upper surface, side and silicon substrate upper surface, the film layer being set on lower electrode are set to powering in film layer Pole.
The production method that the second object of the present invention is achieved in that stream of people's quantity sensor includes the following steps:
A, multiple organic boss of thermal insulation are made using the method photoetching development of spin coating on a silicon substrate;
B, using the method for lithography stripping in the upper surface of the organic boss of each thermal insulation, side and silicon substrate upper surface system Make lower electrode;
C, film layer is being formed on surface using the method for sputtering through step B treated sample surfaces, is then using light The method for carving development removes the organic boss of thermal insulation with the film layer partial corrosion of outer portion, wherein the surface of the film layer The top surface area small 20% of product boss more organic than thermal insulation;
D, top electrode is prepared using the method for removing on the surface of the film layer;
E, the sample for completing to be formed after step D is placed on general tube socket bonding wire and equipment window, obtains flow of the people sensing Device.
Stream of people's quantity sensor provided by the invention only has the characteristics of response to the target of movement using pyroelectricity unit, preparation The flow of the people count detection sensor of multiple pixels out, the direction determining personnel which is moved by detection personnel into Out, the function that such sensor inherently has that personnel count with direction determining is reduced without the participation of memory and CPU Requirement to attached ray machine electric equipment, greatly reduces application cost.On the other hand, this detector uses passive mode work Make, Optical devices appropriate are arranged can detect the direction of motion of multiple individuals simultaneously later.In the occasion of densely populated place, significantly Reduce False Rate.The sensor that the present invention designs is processed using standard silicon process, is encapsulated without vacuum casting, from production The level of technique also greatly reduces cost, can satisfy large-scale production and installation, to realize flow of the people and fall inspection The popularization and application of survey.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention;
Fig. 2 is the structural schematic diagram of single pyroelectricity unit in the present invention;
In figure: the organic boss of electrode, 3-, 4- film layer, 5- top electrode under 1- silicon substrate, 2-.
Specific embodiment
The present invention will be further described below with reference to the drawings, but must not the present invention is limited in any way, Based on present invention teach that made any changes and modifications, all belong to the scope of protection of the present invention.
As shown in Figs. 1-2, it the present invention provides flow of the people sensor for countering, including silicon substrate 1 and is set on silicon substrate 1 Multiple pyroelectricity units, each pyroelectricity unit includes the organic boss 3 of thermal insulation, is set to the organic boss 3 of thermal insulation The lower electrode 2 of 1 upper surface of upper surface, side and silicon substrate, the film layer 4 being set on lower electrode 2 are set in film layer 4 Top electrode 5.
The present invention also provides a kind of methods for making stream of people's quantity sensor, comprising the following steps:
A, multiple organic boss of thermal insulation are made using the method photoetching development of spin coating on a silicon substrate;
B, using the method for lithography stripping in the upper surface of the organic boss of each thermal insulation, side and silicon substrate upper surface system Make lower electrode;
C, film layer is being formed on surface using the method for sputtering through step B treated sample surfaces, is then using light The method for carving development removes the organic boss of thermal insulation with the film layer partial corrosion of outer portion, wherein the surface of the film layer The top surface area small 20% of product boss more organic than thermal insulation;
D, top electrode is prepared using the method for removing on the surface of the film layer;
E, the sample for completing to be formed after step D is placed on general tube socket bonding wire and equipment window, obtains flow of the people sensing Device.
The organic boss 3 of thermal insulation is made of organic matter, height 10-100um.
The lower electrode 2 is made of any metal in CrAu alloy, Cr, Ti, TiAu alloy or Al, with a thickness of 100-300nm。
The film layer 4 is made of PZT material, the upper table of the organic boss 3 of the surface area ratio thermal insulation of the film layer 4 Area is small by 20%.
The top electrode 5 is using any metal production in Ti, NiCr alloy, TiW alloy, Ni, Cr or Au, thickness For 5-30nm.
Stream of people's quantity sensor provided by the invention only has the characteristics of response to the target of movement using pyroelectricity unit, preparation The flow of the people count detection sensor of multiple pixels out, the direction determining personnel which is moved by detection personnel into Out, the function that such sensor inherently has that personnel count with direction determining is reduced without the participation of memory and CPU Requirement to attached ray machine electric equipment, greatly reduces application cost.On the other hand, this detector uses passive mode work Make, Optical devices appropriate are arranged can detect the direction of motion of multiple individuals simultaneously later, in the occasion of densely populated place, significantly Reduce False Rate.The sensor that the present invention designs is processed using standard silicon process, is encapsulated without vacuum casting, from production The level of technique also greatly reduces cost, can satisfy large-scale production and installation, to realize flow of the people and fall inspection The popularization and application of survey.
Embodiment one
A, the method photoetching development of spin coating is used to make 16 height on silicon substrate 1 organic for the thermal insulation of 10-100um Boss 3;
B, using the method for lithography stripping in 1 upper surface of the upper surface of the organic boss 3 of each thermal insulation, side and silicon substrate Lower electrode 2 is made, the lower electrode 2 is made of CrAu alloy, with a thickness of 100-300nm;
C, film layer 4 is being formed on surface using the method for sputtering through step B treated sample surfaces, is then using light The method for carving development removes the organic boss of thermal insulation with the film layer partial corrosion of outer portion, wherein the surface of the film layer The top surface area small 20% of product boss more organic than thermal insulation, the film layer 4 are made of PZT material;
D, top electrode 5 is prepared using the method for removing on the surface of the film layer 4, the top electrode 5 is closed using NiCr Gold production, with a thickness of 5-30nm;
E, the sample for completing to be formed after step D is placed on general tube socket bonding wire and equipment window, obtains flow of the people sensing Device.
Embodiment two
A, the method photoetching development of spin coating is used to make 16 height as the organic boss of the thermal insulation of 10um on silicon substrate 1 3;
B, using the method for lithography stripping in 1 upper surface of the upper surface of the organic boss 3 of each thermal insulation, side and silicon substrate Lower electrode 2 is made, the lower electrode 2 is made of TiAu alloy, with a thickness of 100nm;
C, film layer 4 is being formed on surface using the method for sputtering through step B treated sample surfaces, is then using light The method for carving development removes the organic boss of thermal insulation with the film layer partial corrosion of outer portion, wherein the surface of the film layer The top surface area small 20% of product boss more organic than thermal insulation, the film layer 4 are made of PZT material;
D, top electrode 5 is prepared using the method for removing on the surface of the film layer 4, the top electrode 5 uses TiW alloy Production, with a thickness of 5nm;
E, the sample for completing to be formed after step D is placed on general tube socket bonding wire and equipment window, obtains flow of the people sensing Device.
Embodiment three
A, the method photoetching development of spin coating is used to make 16 height on silicon substrate 1 organic convex for the thermal insulation of 100um Platform 3;
B, using the method for lithography stripping in 1 upper surface of the upper surface of the organic boss 3 of each thermal insulation, side and silicon substrate Lower electrode 2 is made, the lower electrode 2 is made of Cr, with a thickness of 300nm;
C, film layer 4 is being formed on surface using the method for sputtering through step B treated sample surfaces, is then using light The method for carving development removes the organic boss of thermal insulation with the film layer partial corrosion of outer portion, wherein the surface of the film layer The top surface area small 20% of product boss more organic than thermal insulation, the film layer 4 are made of PZT material;
D, top electrode 5 being prepared using the method for removing on the surface of the film layer 4, the top electrode 5 is made of Ni, It is with a thickness of 30nm;
E, the sample for completing to be formed after step D is placed on general tube socket bonding wire and equipment window, obtains flow of the people sensing Device.
Example IV
A, the method photoetching development of spin coating is used to make 16 height as the organic boss of the thermal insulation of 35um on silicon substrate 1 3;
B, using the method for lithography stripping in 1 upper surface of the upper surface of the organic boss 3 of each thermal insulation, side and silicon substrate Lower electrode 2 is made, the lower electrode 2 is made of CrAu alloy, with a thickness of 150nm;
C, film layer 4 is being formed on surface using the method for sputtering through step B treated sample surfaces, is then using light The method for carving development removes the organic boss of thermal insulation with the film layer partial corrosion of outer portion, wherein the surface of the film layer The top surface area small 20% of product boss more organic than thermal insulation, the film layer 4 are made of PZT material;
D, top electrode 5 being prepared using the method for removing on the surface of the film layer 4, the top electrode 5 is made of Ni, It is with a thickness of 15nm;
E, the sample for completing to be formed after step D is placed on general tube socket bonding wire and equipment window, obtains flow of the people sensing Device.
Embodiment five
A, the method photoetching development of spin coating is used to make 16 height as the organic boss of the thermal insulation of 75um on silicon substrate 1 3;
B, using the method for lithography stripping in 1 upper surface of the upper surface of the organic boss 3 of each thermal insulation, side and silicon substrate Lower electrode 2 is made, the lower electrode 2 is made of Ti, with a thickness of 225nm;
C, film layer 4 is being formed on surface using the method for sputtering through step B treated sample surfaces, is then using light The method for carving development removes the organic boss of thermal insulation with the film layer partial corrosion of outer portion, wherein the surface of the film layer The top surface area small 20% of product boss more organic than thermal insulation, the film layer 4 are made of PZT material;
D, top electrode 5 is prepared using the method for removing on the surface of the film layer 4, the top electrode 5 uses TiW alloy Production, with a thickness of 25nm;
E, the sample for completing to be formed after step D is placed on general tube socket bonding wire and equipment window, obtains flow of the people sensing Device.
Stream of people's quantity sensor provided by the invention only has the characteristics of response to the target of movement using pyroelectricity unit, preparation The flow of the people count detection sensor of multiple pixels out, the direction determining personnel which is moved by detection personnel into Out, the function that such sensor inherently has that personnel count with direction determining is reduced without the participation of memory and CPU Requirement to attached ray machine electric equipment, greatly reduces application cost.On the other hand, this detector uses passive mode work Make, Optical devices appropriate are arranged can detect the direction of motion of multiple individuals simultaneously later, in the occasion of densely populated place, significantly Reduce False Rate.The sensor that the present invention designs is processed using standard silicon process, is encapsulated without vacuum casting, from production The level of technique also greatly reduces cost, can satisfy large-scale production and installation, to realize flow of the people and fall inspection The popularization and application of survey.

Claims (10)

1. a kind of flow of the people sensor for countering, including silicon substrate (1) and the multiple pyroelectricity units being set on silicon substrate (1), It is characterized by: pyroelectricity unit includes the organic boss of thermal insulation (3), it is set to the organic boss of thermal insulation (3) upper surface, side With the lower electrode (2) of silicon substrate (1) upper surface, the film layer (4) being set on lower electrode (2) is set on film layer (4) Top electrode (5).
2. flow of the people sensor for countering according to claim 1, it is characterised in that: the organic boss of thermal insulation (3) is adopted It is made of organic matter, height 10-100um.
3. flow of the people sensor for countering according to claim 1, it is characterised in that: the lower electrode (2) is closed using CrAu Gold, Cr, Ti, TiAu alloy, any metal production in Al, with a thickness of 100-300nm.
4. flow of the people sensor for countering according to claim 1, it is characterised in that: the film layer (4) uses PZT material Production, the top surface area of the organic boss of surface area ratio thermal insulation (3) of the film layer (4) are small by 20%.
5. flow of the people sensor for countering according to claim 1, it is characterised in that: the top electrode (5) uses Ti, NiCr Alloy, TiW alloy, any metal production in Ni, Cr, Au, with a thickness of 5-30nm.
6. a kind of flow of the people sensor for countering production method, it is characterised in that include the following steps:
A, multiple organic boss of thermal insulation (3) are made using the method photoetching development of spin coating on silicon substrate (1);
B, using the method for lithography stripping in the upper surface of the organic boss of each thermal insulation (3), side and silicon substrate (1) upper surface Make lower electrode (2);
C, film layer (4) are being formed on surface using the method for sputtering through step B treated sample surfaces, is then using photoetching The method of development removes the organic boss of thermal insulation (5) with film layer (4) partial corrosion of outer portion, wherein the film layer (4) top surface area of the organic boss of surface area ratio thermal insulation (3) is small by 20%;
D, top electrode (5) are prepared using the method for removing on the surface of the film layer (4);
E, the sample for completing to be formed after step D is placed on general tube socket bonding wire and equipment window, obtains stream of people's quantity sensor.
7. flow of the people sensor for countering production method according to claim 6, it is characterised in that: the thermal insulation is organic convex Platform (3) is made of organic matter, height 10-100um.
8. flow of the people sensor for countering production method according to claim 6, it is characterised in that: the lower electrode (2) is adopted It is made of any metal in CrAu alloy, Cr, Ti, TiAu alloy, Al, with a thickness of 100-300nm.
9. flow of the people sensor for countering production method according to claim 6, the film layer (4) uses PZT material system Make, the top surface area of the organic boss of surface area ratio thermal insulation (3) of the film layer (4) is small by 20%.
10. flow of the people sensor for countering production method according to claim 6, it is characterised in that: the top electrode (5) is adopted It is made of any metal in Ti, NiCr alloy, TiW alloy, Ni, Cr, Au, with a thickness of 5-30nm.
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US3896311A (en) * 1974-01-02 1975-07-22 Minnesota Mining & Mfg Pyroelectric motion and temperature sensitive infrared detector with conductive fingers
EP0737869A2 (en) * 1995-04-12 1996-10-16 Matsushita Electric Industrial Co., Ltd. Thermal object measuring apparatus, viewer survey system, distance detector, thermal object detecting method and apparatus
JPH0935037A (en) * 1995-07-19 1997-02-07 Matsushita Electric Ind Co Ltd In-room person detection safety system
CN101246055A (en) * 2008-03-13 2008-08-20 电子科技大学 Lithium tantalate thin film infrared detector and manufacturing method
CN102721658A (en) * 2012-07-05 2012-10-10 昆明斯派特光谱科技有限责任公司 Method for manufacturing pyroelectric spectrum detector
CN103594617A (en) * 2013-11-29 2014-02-19 上海集成电路研发中心有限公司 Piezoelectric cantilever sensor and manufacturing method thereof
CN104155010A (en) * 2014-07-10 2014-11-19 中国科学院长春光学精密机械与物理研究所 Counting pyroelectric infrared sensor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3896311A (en) * 1974-01-02 1975-07-22 Minnesota Mining & Mfg Pyroelectric motion and temperature sensitive infrared detector with conductive fingers
EP0737869A2 (en) * 1995-04-12 1996-10-16 Matsushita Electric Industrial Co., Ltd. Thermal object measuring apparatus, viewer survey system, distance detector, thermal object detecting method and apparatus
JPH0935037A (en) * 1995-07-19 1997-02-07 Matsushita Electric Ind Co Ltd In-room person detection safety system
CN101246055A (en) * 2008-03-13 2008-08-20 电子科技大学 Lithium tantalate thin film infrared detector and manufacturing method
CN102721658A (en) * 2012-07-05 2012-10-10 昆明斯派特光谱科技有限责任公司 Method for manufacturing pyroelectric spectrum detector
CN103594617A (en) * 2013-11-29 2014-02-19 上海集成电路研发中心有限公司 Piezoelectric cantilever sensor and manufacturing method thereof
CN104155010A (en) * 2014-07-10 2014-11-19 中国科学院长春光学精密机械与物理研究所 Counting pyroelectric infrared sensor

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