CN106087049A - A kind of polycrystalline half process of smelting that is beneficial to carries the crucible of effect - Google Patents
A kind of polycrystalline half process of smelting that is beneficial to carries the crucible of effect Download PDFInfo
- Publication number
- CN106087049A CN106087049A CN201610758343.3A CN201610758343A CN106087049A CN 106087049 A CN106087049 A CN 106087049A CN 201610758343 A CN201610758343 A CN 201610758343A CN 106087049 A CN106087049 A CN 106087049A
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- Prior art keywords
- crucible
- thickness
- smelting
- beneficial
- effect
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The present invention relates to a kind of polycrystalline half process of smelting that is beneficial to and carry the crucible of effect, it is specially enlarged in thickness at crucible bottom arc chord angle to 25 60 mm, in the middle of crucible bottom, the place's of emptying thickness is thinned to 5 25mm, other part thickness is between 20 60mm, and in the middle of crucible bottom, the place of the emptying graphite piece processed or other Heat Conduction Material are filled.On the one hand this kind of external form crucible make melting stage heater reduce the heat radiation of edge seed crystal, crystal reaches the purpose of thorough homogeneity forming core all along bottom seed crystal forming core, reducing the poor efficiency ratio of edge crystal bar, crystal ingot whole ingot efficiency can promote 0.05% 0.2%, and efficiency distribution is more concentrated；On the other hand bottom thickness is thinning makes the heat radiation of DS block more abundant, suitably accelerates long crystalline substance, and the ingot casting used time can shorten 24 hours, and ingot casting energy consumption reduces by 10 25%.
Description
Technical field
The present invention relates to a kind of special shape crucible, particularly relate to polycrystalline cast ingot half process of smelting and use.
Background technology
Polycrystalline cast ingot technique is reformed along with the improvement of Technology, the most more stable fine melt and the big work of fritting two of existing
Skill, compares half process of smelting, and fine melt technique has the advantage of cost, and efficiency is also being continuously increased, but average conversion efficiency and fritting work
The gap that skill is fainter than there is also, because using half process of smelting to remain as majority in the industry.Half process of smelting is the most all taked many
The broken silicon material of brilliant crucible bottom paving constant weight or other shape small size silicon material reach the purpose of homogeneity forming core, and advantage is
Efficiency is slightly higher compared with fine melt, if ingot furnace thermal field is uneven, shows when crucible lip temperature is too high, and crystal ingot can be made solid when long crystalline substance
Liquid interface excess convexity, in the case of certain residue seed crystal, edge seed crystal is easier to fusing.Take various way in industry, such as exist
Sheeting edge increases graphite soft felt, the hard felt of graphite, or increases graphite soft felt, DS block edge, heat-insulation cage between backplate and crucible
Bottom increases the methods such as porous graphite material and edge seed crystal can be prevented to a certain extent to be melted, but carbon in being easily caused furnace chamber
Content or the introducing of other impurity, too increase the labour force of production, how to improve this type of situation, a kind of special requirement of design
Crucible will be of great importance.
Summary of the invention
Technical problem underlying to be solved by this invention has: one, design crucible bottom arc chord angle, purpose strengthen arc chord angle or
Crucible thickness at bottom corners is increased；Two, it is ensured that corner's arc chord angle is mellow and full, excess smoothness；Three, strong after crucible bottom is thinning
Degree can decline, it is necessary to assure crucible bottom intensity and flatness reach requirement and avoid crucible bottom cracking to cause overflow.
The present invention solves technical problem and be the technical scheme is that a kind of polycrystalline half process of smelting that is beneficial to carries the crucible of effect,
Crucible bottom corner thickness increases to 25-60mm from conventional 22-30mm.
Further, crucible bottom middle thickness being thinned to original 50-90%, other position thickness of bottom are protected
Hold constant, in emptying shape, from bottom to top empty from crucible outer bottom；
The place of emptying accounts for the percent 5-95% of crucible bottom area；
Described polycrystalline half process of smelting that is beneficial to carries the crucible of effect, and crucible bottom middle THICKNESS CONTROL is at 5-25mm.
Described polycrystalline half process of smelting that is beneficial to carries the crucible of effect, and crucible bottom becomes state of emptying, and pottery vacancy bottom thickness is at 5-
Between 25mm, other position bottom thickness is between 20-60mm.
Described polycrystalline half process of smelting that is beneficial to carries the crucible of effect, and crucible bottom empties place's graphite material or other is at argon
The Heat Conduction Material not reacted with crucible under atmosphere, 1400 DEG C of case above of temperature is filled.
Described a kind of polycrystalline half process of smelting that is beneficial to carries the crucible of effect, the packing material bottom it can be square or
Other any shape can coincideing with crucible bottom；
Described a kind of polycrystalline half process of smelting that is beneficial to carries the crucible of effect, the packing material THICKNESS CONTROL bottom it 0-20mm it
Between.
A kind of polycrystalline half process of smelting that is beneficial to puies forward the crucible preparation method of effect, comprises the following steps:
Step one: revise crucible die, crucible bottom corner thickness is set in 25-60mm；
Step 2: the crucible bottom place of emptying thickness is set as 5-25mm；
Step 3: choose the shape that polycrystalline cast ingot graphite piece materials processing one-tenth coincide with crucible bottom so that crucible bottom is whole
Body is concordant.
The Advantageous Effects of the present invention is: crucible bottom corner thickness increases to 25-60mm from conventional 22-30mm
The heat radiation of edge seed crystal is reduced by melting stage heater, and crystal reaches thorough homogeneity all along bottom seed crystal forming core
The purpose of forming core, reduces the poor efficiency ratio of edge crystal bar, and crystal ingot whole ingot efficiency can promote 0.05%-0.2%, and efficiency distribution more collects
In；On the other hand bottom thickness is thinning makes the heat radiation of DS block more abundant, suitably accelerates long crystalline substance, and the ingot casting used time can shorten 2-4 hour,
Ingot casting energy consumption reduces 10-25%.
Accompanying drawing explanation
The present invention is further described with embodiment below in conjunction with the accompanying drawings.
Fig. 1 silica crucible of the present invention structural representation (one)；
Fig. 2 silica crucible of the present invention structural representation (two)；
Fig. 3 show normal crucible and goes out crystal ingot afterbody crystalline substance flower after ingot；
Fig. 4 show Novel crucible and goes out crystal ingot afterbody crystalline substance flower after ingot.
Detailed description of the invention
In order to be further appreciated by the present invention, the silica crucible provided the present invention below in conjunction with example is described, this
Bright protection domain is not limited by the following examples.
Embodiment
Crucible bottom arc chord angle thickness is set as, and 30 mm, the crucible bottom place of emptying thickness are set as 18mm, other position
Thickness is set in 25 mm, ingot casting cycle time 3 hours, and edge seed crystal retains 90%, and efficiency is consistent with producing line；Each embodiment is corresponding
Crucible parameter is as shown in the table.
Claims (7)
1. one kind is beneficial to polycrystalline half process of smelting and carries the crucible of effect, it is characterised in that thicken in various degree at crucible bottom arc chord angle,
Crucible bottom thickness compared with normal crucible is the thinnest.
Polycrystalline half process of smelting that is beneficial to the most according to claim 1 carries the crucible of effect, it is characterised in that crucible bottom arc chord angle
Enlarged in thickness is to 25-60mm.
Polycrystalline half process of smelting that is beneficial to the most according to claim 2 carries the crucible of effect, it is characterised in that crucible bottom becomes to empty
Shape, empty place bottom thickness between 5-25mm, the place of emptying accounts for the percent 5-95% of crucible bottom area.
4. carry the crucible of effect according to polycrystalline half process of smelting that is beneficial to described in claim 1 or right 2, it is characterised in that crucible bottom
Fill out with graphite material or other Heat Conduction Material not reacted with crucible under argon gas atmosphere, 1400 DEG C of case above of temperature
Fill.
Polycrystalline half process of smelting that is beneficial to the most according to claim 4 carries the crucible of effect, the packing material bottom it and crucible
The shape of bottom is coincide.
Polycrystalline half process of smelting that is beneficial to the most according to claim 5 carries the crucible of effect, it is characterised in that the filling bottom it
Material thickness controls between 0-20mm.
7. polycrystalline half process of smelting that is beneficial to as described in claims any one of claim 1-6 carries the crucible of effect and prepares
Method, comprises the following steps:
Step one: revise crucible die, by crucible bottom inner circle arc angle thickness at 25-60mm；
Step 2: crucible bottom thickness is set as 5-60mm, empty place bottom thickness between 5-25mm, bottom other position
Thickness is between 20-60mm；
Step 3: choose the shape that polycrystalline cast ingot graphite piece materials processing one-tenth coincide with crucible bottom so that crucible bottom is whole
Body is concordant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610758343.3A CN106087049A (en) | 2016-08-30 | 2016-08-30 | A kind of polycrystalline half process of smelting that is beneficial to carries the crucible of effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610758343.3A CN106087049A (en) | 2016-08-30 | 2016-08-30 | A kind of polycrystalline half process of smelting that is beneficial to carries the crucible of effect |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106087049A true CN106087049A (en) | 2016-11-09 |
Family
ID=57224330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610758343.3A Pending CN106087049A (en) | 2016-08-30 | 2016-08-30 | A kind of polycrystalline half process of smelting that is beneficial to carries the crucible of effect |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106087049A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000351688A (en) * | 1999-06-10 | 2000-12-19 | Mitsubishi Materials Corp | Crucible for producing crystalline silicon and its production |
| CN202144522U (en) * | 2011-07-19 | 2012-02-15 | 天威新能源控股有限公司 | Crucible |
| CN102477581A (en) * | 2010-11-23 | 2012-05-30 | 上海普罗新能源有限公司 | Crucible platform for polycrystalline silicon ingot casting furnace |
| CN203474952U (en) * | 2013-09-09 | 2014-03-12 | 江苏协鑫硅材料科技发展有限公司 | Quartz crucible for ingot casting |
| CN103917699A (en) * | 2011-09-05 | 2014-07-09 | 原子能和代替能源委员会 | Device for manufacturing a crystalline material from a crucible having non-uniform heat resistance |
| CN203976975U (en) * | 2014-07-25 | 2014-12-03 | 湖南红太阳光电科技有限公司 | A kind of polycrystalline silicon ingot or purifying furnace heat exchange platform and polycrystalline silicon ingot or purifying furnace |
| CN104928756A (en) * | 2015-07-01 | 2015-09-23 | 江苏协鑫硅材料科技发展有限公司 | Crucible |
-
2016
- 2016-08-30 CN CN201610758343.3A patent/CN106087049A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000351688A (en) * | 1999-06-10 | 2000-12-19 | Mitsubishi Materials Corp | Crucible for producing crystalline silicon and its production |
| CN102477581A (en) * | 2010-11-23 | 2012-05-30 | 上海普罗新能源有限公司 | Crucible platform for polycrystalline silicon ingot casting furnace |
| CN202144522U (en) * | 2011-07-19 | 2012-02-15 | 天威新能源控股有限公司 | Crucible |
| CN103917699A (en) * | 2011-09-05 | 2014-07-09 | 原子能和代替能源委员会 | Device for manufacturing a crystalline material from a crucible having non-uniform heat resistance |
| CN203474952U (en) * | 2013-09-09 | 2014-03-12 | 江苏协鑫硅材料科技发展有限公司 | Quartz crucible for ingot casting |
| CN203976975U (en) * | 2014-07-25 | 2014-12-03 | 湖南红太阳光电科技有限公司 | A kind of polycrystalline silicon ingot or purifying furnace heat exchange platform and polycrystalline silicon ingot or purifying furnace |
| CN104928756A (en) * | 2015-07-01 | 2015-09-23 | 江苏协鑫硅材料科技发展有限公司 | Crucible |
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| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20161109 |