CN106082328B - A kind of Fe2O3 doping arsenic acid gallium piezoelectric and preparation method thereof - Google Patents
A kind of Fe2O3 doping arsenic acid gallium piezoelectric and preparation method thereof Download PDFInfo
- Publication number
- CN106082328B CN106082328B CN201610459074.0A CN201610459074A CN106082328B CN 106082328 B CN106082328 B CN 106082328B CN 201610459074 A CN201610459074 A CN 201610459074A CN 106082328 B CN106082328 B CN 106082328B
- Authority
- CN
- China
- Prior art keywords
- piezoelectric
- arsenic acid
- fe2o3 doping
- acid gallium
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G28/00—Compounds of arsenic
- C01G28/02—Arsenates; Arsenites
- C01G28/026—Arsenates; Arsenites containing at least two metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G49/00—Compounds of iron
- C01G49/009—Compounds containing, besides iron, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Compounds Of Iron (AREA)
Abstract
The invention discloses a kind of Fe2O3 doping arsenic acid gallium piezoelectric, the chemical formula of the Fe2O3 doping arsenic acid gallium piezoelectric is Ga1‑ xFexAsO4, wherein x span is 0<x<1；The embodiment of the present invention also provides a kind of preparation method of Fe2O3 doping arsenic acid gallium piezoelectric, by the present invention cheap Fe doped portions can be used to replace Ga, obtain class alpha-quartz crystal Ga1‑xFexAsO4；With GaAsO4With identical crystal structure, space group P3 is belonged to together121 or P3221,32 point groups.Wherein As5+Occupy X, Fe3+And Ga3+M are occupied at random jointly.With with low cost, it is easy to crystal material growth and prepare the advantages of, be conducive to extensively it is practical, be expected to obtain heavy industrialization application.
Description
Technical field
The invention belongs to technical field of piezoelectric materials, and in particular to a kind of Fe2O3 doping arsenic acid gallium piezoelectric and its preparation side
Method.
Background technology
Piezoelectric refers to the material with piezo-electric effect, piezo-electric effect refer to some dielectrics in a certain direction by
Polarization phenomena can be produced to the effect of external force when deforming, inside it, so as to produce electric charge on its two apparent surfaces
Phenomenon, is a kind of form of mechanical energy and electric energy conversion, while there is inverse piezoelectric effect, is related to electric energy to the conversion of mechanical energy.
Piezoelectric is widely used in the electronic components such as making resonance, transducer, sensor and wave filter, is hyundai electronicses
Technology and the indispensable stock of communications industry.At present the most widely used piezoelectric in market be mainly alpha-quartz and
Lithium columbate crystal；Alpha-quartz has production cost low, the advantages of temperature stability is good, still, its shortcoming also ten substantially, for example
Piezoelectric activity is relatively low, the phase transformation that there is α quartz-β quartz at 573 DEG C, and low electromechanical coupling factor（8.8%）Deng limiting
Its use under the high temperature conditions and in microdevice, lithium columbate crystal is compared with alpha-quartz, although with larger machine
Electric coupling coefficient, but frequency stability of temperature is poor, these all limit they in modern communications technology and device miniaturization and
Demand for development in terms of space technology field；Therefore, research is with preferable piezoelectric property and can be used under higher temperature environment
Novel piezoelectric material be it is urgent and with practical significance problem.
At present, class alpha-quartz piezoelectric MIIIXVO4(M=Al,Ga,Fe;X=As, P) research receive the extensive of people
Concern；Class alpha-quartz material belongs to P3121 or P32By M in 21 space groups, crystal structureIIIO4Tetrahedron and XVO4Tetrahedron
Chain is built-up along z-axis spiral, and its piezoelectric property and its heat endurance and α phases are closely related relative to the structural distortion of β phases,
The structural aberration is typically described with tetrahedral bridge joint angle θ and the two angles of tetrahedron inclination angle δ.
In recent years, a series of class alpha-quartz piezoelectric and their solid solution phase are characterized and studied after being synthesized,
Mainly include:SiO2-GeO2、SiO2-PON、SiO2-AlPO4、AlPO4、FePO4、GaPO4、AlPO4-GaPO4、AlPO4-
AlAsO4、AlPO4-FePO4、GaAsO4、AlPO4-AlAsO4、AlPO4-FePO4Deng.Current result of study shows, these materials
Piezoelectric property with its structural distortion degree, i.e., as θ reduction and δ increase change in certain linear functional relation,
And a kind of main path for obtaining more structural aberration is exactly to increase the average-size of M cations.
In class alpha-quartz material, GeO2And GaAsO4The structure most distorted is considered to have, with minimum θ angles and most
High δ values, show highest piezoelectric coupling coefficient（≈ 22%）With highest heat endurance（GaAsO4Until almost 1303K's
All without generation α-βphasetransition before decomposition temperature）, thus be considered as very promising high-temperature piezoelectric material；But, it is expensive
Cost of material seriously limits their application.
Meanwhile, in order to explore performance more preferably, piezoelectric with low cost, people are heterogeneous to class alpha-quartz piezoelectric
Isolog compound has also carried out extensive research, and the compound reported includes Al1-xGaxPO4And Ga1-xFexPO4Deng；For example
Al1-xGaxPO4, such a material instead of Ga on M positions using Al, due to Al2O3Price far in Ga2O3, make material cost
Significantly decline, while having excellent piezoelectric property concurrently, make it that there is very strong advantage in terms of piezoelectric device is made, but in material
Material is found during preparing, for GaPO4For material, it is poor that above-mentioned Al and Fe instead of the material crystalline after Ga, difficult
To obtain non-nuclear density gauge, large-sized crystal influences promoting the use of for material.
There is presently no for Ga1-xFexAsO4The research report of crystal and its preparation.
The content of the invention
In view of this, it is a primary object of the present invention to provide a kind of Fe2O3 doping arsenic acid gallium piezoelectric and its preparation side
Method.
To reach above-mentioned purpose, the technical proposal of the invention is realized in this way：
The embodiment of the present invention provides a kind of Fe2O3 doping arsenic acid gallium piezoelectric, the chemistry of the Fe2O3 doping arsenic acid gallium piezoelectric
Formula is Ga1-xFexAsO4, wherein x span is 0<x<1.
In such scheme, the span of the x is 0.10<x<0.60.
In such scheme, the Fe2O3 doping arsenic acid gallium piezoelectric has and arsenic acid gallium GaAsO4Identical crystal structure,
Belong to class alpha-quartz crystal, category space group P3121 or P3221,32 point groups.
The embodiment of the present invention also provides a kind of preparation method of Fe2O3 doping arsenic acid gallium piezoelectric, and the preparation method passes through such as
Lower step is realized：
Step（1）：It is dissolved in arsenic acid solution, prepares not respectively containing gallium compound and iron containing compoundses than weighing according to metering
The reactant of common ion concentration, above-mentioned reaction solution is stirred at room temperature until solution is clarified；
Step（2）：According to Ga：Fe concentration ratios 1:1~2 by step（1）Obtained two kinds of solution is mixed under magnetic stirring
Uniformly；
Step（3）：By step（2）Well mixed solution is transferred in the hydrothermal reaction kettle of polytetrafluoroethyllining lining；
Step（4）：The hydrothermal reaction kettle is placed in reacting furnace, 150~170 DEG C are heated to, 3~5 days are incubated；
Step（5）：By amplitude of the reacting furnace according to daily 3~5 DEG C of heating, 230~245 DEG C are continued to be heated to;
Step（6）：After reaction terminates, the hydrothermal reaction kettle is quickly cooled down, then resulting product is washed, dried
Product is placed in crucible afterwards, final goal product is obtained within 24~72 hours in 500 DEG C~700 DEG C heating.
In such scheme, the iron containing compoundses use Fe (NO3)3·9H2O、Fe2(SO4)3Or FeX3, X be halogen from
Son.
It is described to use GaO (OH) or Ga (OH) containing gallium compound in such scheme.
Compared with prior art, beneficial effects of the present invention：
By the present invention in that replacing Ga with cheap Fe doped portions, class alpha-quartz crystal Ga is obtained1-xFexAsO4；
With GaAsO4With identical crystal structure, space group P3 is belonged to together121 or P3221,32 point groups.Wherein As5+Occupy X, Fe3+With
Ga3+M are occupied at random jointly.With with low cost, it is easy to the advantages of crystal material growth is with preparing, be conducive to extensive practicality
Change, be expected to obtain heavy industrialization application.
Brief description of the drawings
Fig. 1 is the X-ray diffractogram of the resulting materials of embodiment one；
Fig. 2 is the resulting materials power spectrum of embodiment two（EDS）Quantitative analysis and ESEM（SEM）Figure；
Fig. 3 is the gained Ga of embodiment one and two1-xFexAsO4Displacement diagram of the Raman spectrum of material relative to iron content.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
The embodiment of the present invention provides a kind of Fe2O3 doping arsenic acid gallium piezoelectric, the chemistry of the Fe2O3 doping arsenic acid gallium piezoelectric
Formula is Ga1-xFexAsO4, wherein x span is 0<x<1.
The preferred span of the x is 0.10<x<0.60.
The Fe2O3 doping arsenic acid gallium piezoelectric has and arsenic acid gallium GaAsO4Identical crystal structure, belongs to class α-stone
English crystal, category space group P3121 or P3221,32 point groups；Wherein As5+Occupy X, Fe3+And Ga3+M are occupied at random jointly.Tool
Have with low cost, it is easy to crystal material growth and prepare the advantages of, be conducive to extensively it is practical, be expected to obtain heavy industrialization
Using.
The embodiment of the present invention also provides a kind of preparation method of Fe2O3 doping arsenic acid gallium piezoelectric, and the preparation method passes through such as
Lower step is realized：
Step（1）：It is dissolved in arsenic acid solution, prepares not respectively containing gallium compound and iron containing compoundses than weighing according to metering
The reactant of common ion concentration, above-mentioned reaction solution is stirred at room temperature until solution is clarified；
Step（2）：According to Ga：Fe concentration ratios 1:1~2 by step（1）Obtained two kinds of solution is mixed under magnetic stirring
Uniformly；
Step（3）：By step（2）Well mixed solution is transferred in the hydrothermal reaction kettle of polytetrafluoroethyllining lining；
Step（4）：The hydrothermal reaction kettle is placed in reacting furnace, 150~170 DEG C are heated to, 3~5 days are incubated；
Step（5）：By amplitude of the reacting furnace according to daily 3~5 DEG C of heating, 230~245 DEG C are continued to be heated to.
Step（6）：After reaction terminates, the hydrothermal reaction kettle is quickly cooled down, then resulting product is washed, dried
Product is placed in crucible afterwards, final goal product is obtained within 24~72 hours in 500 DEG C~700 DEG C heating.
The iron containing compoundses use Fe (NO3)3·9H2O、Fe2(SO4)3Or FeX3, X is halide ion.
It is described to use GaO (OH) or Ga (OH) containing gallium compound.
The step（6）In, hydrothermal reaction kettle is quickly cooled down, then resulting product is washed, gained is produced after drying
Thing is Ga1-xFexAsO4Hydrated product.
There is the cost lower than arsenic acid gallium by the Fe2O3 doping arsenic acid gallium piezoelectric obtained by the present invention, be expected to realize arsenic
Sour gallium piezoelectric realizes performance boost and application extension while cost is greatly lowered；In addition, the present invention can amplify
For preparing seed crystal and small crystals raw material required for raw grown crystal.
Embodiment one
, close the Fe (NO that two solution an weigh 0.075mol with balance respectively3)3·9H2O and 0.075mol GaO (OH),
It is dissolved under agitation in 100mL arsenic acid solution.
, after rear stove ethene stirs, above-mentioned solution is transferred in the hydrothermal reaction kettle of polytetrafluoroethyllining lining, sealed
Afterwards, it is put into heating furnace, is warming up to 170 DEG C, is incubated 5 days.Then, with daily 5 DEG C of heating rate by hydro-thermal reaction kettle temperature
Degree is heated to 235 DEG C.
After question response terminates, hydrothermal reaction kettle is taken out, is placed in cold water and quickly cools down, after cooling, hydro-thermal reaction is opened
Kettle, is washed with deionized water and absolute ethyl alcohol, is filtered respectively to product.
Filtration product is dried to obtain hydrate phase in 60 DEG C, the product that 500 DEG C of dryings are dehydrated for 24 hours enters to it
Row element assay, it is Ga to draw its stoichiometric equation0.82Fe0.18AsO4。
Embodiment two
, close two solution an and weigh the Fe (NO for taking 0.100mol in the balance3)3·9H2O and 0.075mol GaO (OH), is being stirred
Mix it is lower be dissolved in respectively in 50mL arsenic acid solution, after the completion for the treatment of that two kinds of solution are prepared respectively, continue stirring state under, it is molten by two kinds
Liquid is slowly mixed together.
, then above-mentioned mixed solution is transferred in the hydrothermal reaction kettle of polytetrafluoroethyllining lining by rear stove ethene, after sealing,
It is put into heating furnace, is warming up to 170 DEG C, is incubated 3 days.Then, hydrothermal reaction kettle temperature is added with daily 5 DEG C of heating rate
Heat is to 245 DEG C.
After question response terminates, hydrothermal reaction kettle is taken out, is placed in cold water and quickly cools down, after cooling, hydro-thermal reaction is opened
Kettle, is washed with deionized water and absolute ethyl alcohol, is filtered respectively to product.
Filtration product is dried to obtain hydrate phase in 60 DEG C, the product that 700 DEG C of dryings are dehydrated for 24 hours enters to it
Row element assay, it is Ga to draw its stoichiometric equation0.4Fe0.6AsO4。
The foregoing is only a preferred embodiment of the present invention, is not intended to limit the scope of the present invention.
Claims (6)
1. a kind of Fe2O3 doping arsenic acid gallium piezoelectric, it is characterised in that：The chemical formula of the Fe2O3 doping arsenic acid gallium piezoelectric is
Ga1-xFexAsO4, wherein x span is 0<x<1.
2. Fe2O3 doping arsenic acid gallium piezoelectric according to claim 1, it is characterised in that：The span of the x is
0.10<x<0.60。
3. Fe2O3 doping arsenic acid gallium piezoelectric according to claim 1 or 2, it is characterised in that：The Fe2O3 doping arsenic acid gallium
Piezoelectric has and arsenic acid gallium GaAsO4Identical crystal structure, belongs to class alpha-quartz crystal, category space group P3121 or
P3221,32 point groups.
4. a kind of preparation method of Fe2O3 doping arsenic acid gallium piezoelectric, it is characterised in that the preparation method is real as follows
It is existing：
Step（1）：Be dissolved in respectively in arsenic acid solution containing gallium compound and iron containing compoundses according to metering than weighing, prepare it is different from
The reactant of sub- concentration, above-mentioned reaction solution is stirred at room temperature until solution is clarified；
Step（2）：According to Ga：Fe concentration ratios 1:1~2 by step（1）Obtained two kinds of solution is well mixed under magnetic stirring；
Step（3）：By step（2）Well mixed solution is transferred in the hydrothermal reaction kettle of polytetrafluoroethyllining lining；
Step（4）：The hydrothermal reaction kettle is placed in reacting furnace, 150~170 DEG C are heated to, 3~5 days are incubated；
Step（5）：By amplitude of the reacting furnace according to daily 3~5 DEG C of heating, 230~245 DEG C are continued to be heated to；
Step（6）：After reaction terminates, the hydrothermal reaction kettle is quickly cooled down, then resulting product is washed, will after drying
Product is placed in crucible, and final goal product is obtained within 24~72 hours in 500 DEG C~700 DEG C heating.
5. the preparation method of Fe2O3 doping arsenic acid gallium piezoelectric according to claim 4, it is characterised in that：The iron content
Compound uses Fe (NO3)3·9H2O、Fe2(SO4)3Or FeX3, X is halide ion.
6. the preparation method of the Fe2O3 doping arsenic acid gallium piezoelectric according to claim 4 or 5, it is characterised in that：It is described to contain
Gallium compound uses GaO (OH) or Ga (OH).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610459074.0A CN106082328B (en) | 2016-06-22 | 2016-06-22 | A kind of Fe2O3 doping arsenic acid gallium piezoelectric and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610459074.0A CN106082328B (en) | 2016-06-22 | 2016-06-22 | A kind of Fe2O3 doping arsenic acid gallium piezoelectric and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106082328A CN106082328A (en) | 2016-11-09 |
| CN106082328B true CN106082328B (en) | 2017-10-20 |
Family
ID=57239006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610459074.0A Expired - Fee Related CN106082328B (en) | 2016-06-22 | 2016-06-22 | A kind of Fe2O3 doping arsenic acid gallium piezoelectric and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106082328B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1038323A (en) * | 1988-06-04 | 1989-12-27 | 张玉宏 | Artificial board made from hawthorn-pits and production technology thereof |
| CN103130493A (en) * | 2011-11-23 | 2013-06-05 | 财团法人工业技术研究院 | Indium Gallium Zinc Oxide (IGZO) nano powder and preparation method and application thereof |
| CN104024154A (en) * | 2011-12-16 | 2014-09-03 | 三星精密化学株式会社 | Crystalline iron phosphate doped with metal, method for preparing same, and lithium composite metal phosphate prepared therefrom |
| CN104495778A (en) * | 2015-01-06 | 2015-04-08 | 青岛大学 | Preparation method of gallophosphate microporous material |
| CN105018089A (en) * | 2015-07-06 | 2015-11-04 | 河北大学 | Phosphate or metaphosphate based visible-ultraviolet up-conversion luminescence material doped with rare earth ions, and preparation method and application thereof |
-
2016
- 2016-06-22 CN CN201610459074.0A patent/CN106082328B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1038323A (en) * | 1988-06-04 | 1989-12-27 | 张玉宏 | Artificial board made from hawthorn-pits and production technology thereof |
| CN103130493A (en) * | 2011-11-23 | 2013-06-05 | 财团法人工业技术研究院 | Indium Gallium Zinc Oxide (IGZO) nano powder and preparation method and application thereof |
| CN104024154A (en) * | 2011-12-16 | 2014-09-03 | 三星精密化学株式会社 | Crystalline iron phosphate doped with metal, method for preparing same, and lithium composite metal phosphate prepared therefrom |
| CN104495778A (en) * | 2015-01-06 | 2015-04-08 | 青岛大学 | Preparation method of gallophosphate microporous material |
| CN105018089A (en) * | 2015-07-06 | 2015-11-04 | 河北大学 | Phosphate or metaphosphate based visible-ultraviolet up-conversion luminescence material doped with rare earth ions, and preparation method and application thereof |
Non-Patent Citations (4)
| Title |
|---|
| Growth and dielectric characterization of large single crystals of GaAsO4, a novel piezoelectric material;O. Cambon，et al.;《Solid State Sciences》;20131231;摘要、第470页第3节 * |
| Manhal Souleiman，et al..Study of Ga3+-Induced Hydrothermal Crystallization of an α‑ * |
| Quartz Type Ga1-xFexPO4 Single Crystal by in Situ X‑ * |
| ray Absorption Spectroscopy (XAS).《Inorg. Chem.》.2012, * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106082328A (en) | 2016-11-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101979443B (en) | Method for producing modified white carbon black | |
| CN101850955B (en) | Method for preparing spherical iron phosphate grains | |
| CN101905890A (en) | Use the gel synthesis of molecular sieve SSZ-74 of hydroxide radical as medium | |
| Stock et al. | Phosphorus Oxonitridosodalites: Synthesis Using a Molecular Precursor and Structural Investigation by X‐ray and Neutron Powder Diffraction and 31P MAS NMR Spectroscopy | |
| CN101428857A (en) | Inducement control synthesis of zinc molybdate nano-material | |
| CN106082328B (en) | A kind of Fe2O3 doping arsenic acid gallium piezoelectric and preparation method thereof | |
| Yakubovich et al. | An orthorhombic modification of KCoPO4 stabilized under hydrothermal conditions: Crystal chemistry and magnetic behavior | |
| CN106145155B (en) | A kind of method preparing high silica alumina ratio Y type molecular sieve, product and its application | |
| CN114524470B (en) | Nickel ferrite nanoparticle and green synthesis method and application thereof | |
| Zhang et al. | An effective method for the synthesis of 3D inorganic Ln (III)–K (I) sulfate open frameworks with unusually high thermal stability: in situ generation of sulfate anions | |
| CN107686130A (en) | The synthesis of a kind of bismuth iodine hybrid material and for preparing BiOI nanometer sheets | |
| CN108069461A (en) | The synthetic method of cobalt disulfide powder | |
| Cui et al. | Hydrothermal synthesis and characterization of (enH2) 3.5 [As8V14O42 (PO4)]· 2H2O | |
| Benmokhtar et al. | New process of preparation, structure, and physicochemical investigations of the new titanyl phosphate Ti2O (H2O)(PO4) 2 | |
| Zulumyan et al. | The development of a new route to the synthesis of strontium orthosilicate | |
| CN109021032B (en) | Rare earth sandwich type vacancy Keggin polyacid single crystal and preparation method thereof | |
| He et al. | Synthesis of C3S by sol-gel technique and its features | |
| CN102533247B (en) | A kind of containing dysprosium fluorescent crystal and preparation method thereof | |
| Zhang et al. | Hydrothermal Syntheses and Crystal Structures of Compounds Based on α-or β-[Mo 8 O 26] 4− Isomers | |
| Fukami et al. | Crystal Growth, Structural and Thermal Studies of FeC4H4O6· 2.5 H2O | |
| CN114656491B (en) | Polynuclear rare earth-based organic-inorganic hybrid magnetic material, and preparation method and application thereof | |
| CN110137346A (en) | A kind of additive Mn ferrous acid holmium HoMnxFe1-xO3The preparation method of magnetoelectric material | |
| CN110127763A (en) | A kind of three-D inorganic high molecular polymer and preparation method thereof | |
| CN103570033B (en) | Method of preparing kaolin at low temperature | |
| CN108948371B (en) | Coordination polymer magnetic material based on in-situ ligand reaction and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171020 Termination date: 20180622 |