CN106067950B - Near field terahertz imaging device - Google Patents
Near field terahertz imaging device Download PDFInfo
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- CN106067950B CN106067950B CN201510813139.2A CN201510813139A CN106067950B CN 106067950 B CN106067950 B CN 106067950B CN 201510813139 A CN201510813139 A CN 201510813139A CN 106067950 B CN106067950 B CN 106067950B
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- 238000003384 imaging method Methods 0.000 title claims abstract description 29
- 230000005540 biological transmission Effects 0.000 claims abstract description 62
- 239000011159 matrix material Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 10
- 238000001514 detection method Methods 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 206010028980 Neoplasm Diseases 0.000 description 2
- 201000011510 cancer Diseases 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/03—Astable circuits
- H03K3/0315—Ring oscillators
Abstract
This disclosure relates near field terahertz imaging device.This disclosure relates to a kind of high frequency imager, including picture element matrix, each pixel include high frequency oscillator；Transmission line at the distance of operative wavelength for being less than the imager away from the imager, the first end of the transmission line are coupled to the oscillator；And it is coupled to the reading circuit of the transmission line second end.
Description
Technical field
This disclosure relates to the high frequency imager formed by picture element matrix, for example, terahertz imaging device.
Background technique
Terahertz imaging device is adapted to based on THz wave (that is, having for example 0.3 to the frequency between 3THz
Wave) come capturing scenes image equipment.Institute is public such as in the U.S. Patent Application Publication No. of applicant 2014/070103
The Conventional imagers opened include THz wave transmitter for irradiating scene to be imaged and receive THz wave from the scene
The sensor being made of picture element matrix.Terahertz imaging device is used in extensive application, wherein it is desirable to seeing through some materials of scene
Material.In fact, THz wave penetrates a large amount of dielectric materials and nonpolar liquid, is only absorbed by the water and almost anti-by metal
It penetrates.Terahertz imaging device especially is used for the security scanner in airport, for seeing through the clothing or luggage of people, to for example examine
Survey metal object.
Fig. 1 is the duplicate of U.S. Patent Application Publication No. 2014/070103 Fig. 1.Sensor 1 includes adapting to catch
Obtain the matrix 3 of the pixel 5 of THz wave.Row decoder 7 receives row selection signal 9, which row selection signal instruction will read
Row simultaneously provides corresponding control signal 11 to the row of matrix 3.Picture element matrix 3 provides output signal 13 for each column of matrix.Output
Signal 13 is coupled to selection and controls the output block 15 of each column.The reading of column is by being coupled to the column decoder 17 of output block 15
Control, and in this example, column are read one by one.Output block 15 provides the pixel 5 for the row and column for indicating selected
Value output signal 19.Output signal 19 is amplified and is coupled to AD converter 21.
In order to analyze the signal received, which combines with the reference terahertz signal provided by oscillator 23.Oscillation
Device 23 is disposed in the outside of matrix 3 and provides identical terahertz signal to a large amount of pixels of sensor 1 or whole pixels.It should
Oscillator 23 is preferably coupled with terahertz transmitter (not shown) to irradiate the scene to be analyzed.
Fig. 2 is the duplicate of U.S. Patent Application Publication No. 2014/070103 Fig. 3, and illustrates sensor 1
The example of one pixel 5.In this example, pixel 5 includes the detection antenna 25 formed by two N-MOS transistors 29 and detection
Circuit 27, the grid of transistor are biased at potential Vgate.Antenna is coupled to oscillator 23 shown in FIG. 1 and detection circuit
27.The output of detection circuit 27 is coupled to row and column selection circuit 31.Selection circuit 31 passes through the row decoder by sensor 1
The 7 signal R providedSELAnd pass through the signal C provided by the column decoder 17 of sensor 1SELControl.Indicate the value of pixel 5
Analog output signal 19 can be in the node COL for the converter 21 (Fig. 1) for being coupled to sensor 1OUTPlace obtains.
Fig. 3 is the duplicate of U.S. Patent Application Publication No. 2014/070103 Fig. 5, illustrates terahertz imaging device
Frequency oscillation circuit 33 example.Circuit 33 includes the ring oscillator being made of the N number of phase inverter of odd number, and N is in this example
It is three.Each phase inverter includes NMOS transistor 35, and the drain electrode of NMOS transistor 35 is coupled to node 37, and NMOS is brilliant
The source electrode of body pipe 35 is coupled to ground connection.Each node 37 passes through the grid that inductor 39 is coupled to next transistor 35, electricity
The inductance value having the same of sensor 39.Each node 37 is further coupled to addition node 41 by inductor 43, all
The inductance value having the same of inductor 43.Addition node 41 is coupled to DC voltage source 45 via inductor 47, and via electricity
Sensor 51 is coupled to the output node 49 of transmitter 33.As shown, output node 49 can for example pass through resistor 53
It is grounded.
In operation, fundamental wave sinusoidal component of the signal generated by ring oscillator with frequency F has with one of them
The harmonic sine component of frequency N*F.The value of each inductor 43 is selected to achieve the bandpass filter that centre frequency is N*F,
And there is the frequency f equal to N*FL0Output signal can be in the output for the transmitter 33 for being coupled to terahertz sources antenna
It is obtained at node 49.
Fig. 4 is the part duplicate of U.S. Patent Application Publication No. 2014/070103 Fig. 8, is schematically illustrated
Example embodiment as combined frequency oscillation circuit 33 disclosed in Fig. 3, but there are 5 phase inverters rather than 3 are anti-
Phase device.In this example, each inductor 39,43,51 is implemented as transmission line.
The terahertz imaging device in conjunction with disclosed in Fig. 1 to Fig. 4 be provided for seeing through large object some materials it is remote
Imager, in the distant location observation away from object, object has a size greater than 10cm, and preferably greater than 1 meter.Using far field at
The resolution ratio of the image obtained as device the most preferably about operative wavelength of imager, that is, under 300GHz frequency for 1mm and
It is 0.1nm under 3THz frequency.In order to improve the spatial resolution of far field imager, the operating frequency of imager can be increased.So
And which results in various problems.Therefore, far field terahertz imaging device and do not adapt to acquisition have a few tenths of micron order of magnitude
The image of resolution ratio.
The image with a few tenths of micron order of magnitude resolution ratio of the object to be analyzed of near field terahertz imaging device offer.
However, especially because these imagers accelerate the terahertz sources source of radiation etc and such as ellipse using such as coherent synchronization
The optical system of circle mirror etc, so that these imagers implement very complicated.Shade et al. was published in 2005
Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, the text in 46
Chapter " THz near-field imaging of biological tissues employing synchrotron
The example of such Near-Field Radar Imaging device is disclosed in radiation ".
Therefore, it would be desirable to provide near field terahertz imaging device as simple as possible and near field terahertz imaging device offer tool
There is the image of the resolution ratio of a few tenths of micron order of magnitude.
Summary of the invention
Therefore, embodiment provides the high frequency imager including picture element matrix, and each pixel includes: high frequency oscillator；It is fixed
Transmission line of the position at the distance that the activation surface (active) away from the imager is less than the operative wavelength of oscillator, transmission line
First end is coupled to oscillator；And it is coupled to the reading circuit of the second end of transmission line.
According to embodiment, the reading circuit of each pixel provides the signal for indicating the impedance of transmission line.
According to embodiment, the oscillator of each pixel includes second transmission line.
According to embodiment, the layer for adapting to that high frequency waves is prevented to propagate at least covers second transmission line.
According to embodiment, the reading circuit of pixel provides the signal for indicating the frequency of oscillator of pixel.
According to embodiment, transmission line is microstrip-type.
According to embodiment, imager is adapted to the frequency operation within the scope of 0.3 to 3THz.
Detailed description of the invention
The foregoing and other features, aspects and advantages of the disclosure will be by reference to attached drawing and by illustrative non-limiting
Mode provide, the detailed description of embodiment is become apparent below.
Fig. 1 (as described above) is the duplicate of U.S. Patent Application Publication No. 2014/070103 Fig. 1, schematically
Illustrate the example of terahertz imaging device sensor；
Fig. 2 (as described above) is the duplicate of U.S. Patent Application Publication No. 2014/070103 Fig. 3, schematically
Illustrate the example of the pixel of the sensor of Fig. 1；
Fig. 3 (as described above) is the duplicate of U.S. Patent Application Publication No. 2014/070103 Fig. 5, schematically
Illustrate the example of Terahertz frequency oscillator circuits；
Fig. 4 (as described above) is the duplicate of U.S. Patent Application Publication No. 2014/070103 Fig. 8, exemplary
Illustrate the example of the embodiment of the circuit of Fig. 3；
Fig. 5 is the schematic plan for illustrating a part of pixel of terahertz imaging device according to an embodiment of the present disclosure
Figure；
Fig. 6 is the sectional view of the plane AA of Fig. 5 and the transmission line for illustrating imager；And
Fig. 7 is the sectional view of the plane BB of Fig. 5 and the shielded transmission line for illustrating imager.
Specific embodiment
In various attached drawings, identical element is indicated by the same numbers, and additionally, attached drawing is not in proportion
It draws.In being described below, term " ... on " and " ratio ... high " refer to the orientation of coherent element in the corresponding drawings.It removes
Non-specifically point out, otherwise, state " about " and " with ... the order of magnitude " indicate within the 10% of described value, or preferably exist
Within 5%.
Fig. 5 is the schematic top view of the embodiment of terahertz imaging device, illustrates only the one of the imager in the figure
Part.Imager includes the matrix 61 of pixel 63, and 3 pixels of the column of matrix 61 are shown in FIG. 5.Each pixel includes oscillation
Device (for example, as combined disclosed in Fig. 3 and Fig. 4), reading circuit 65 and transmission line 67.It is coupled to oscillator in one end of transmission line 67
33 node 41, and the other end is coupled to reading circuit 65.The reading circuit of each pixel adapts to provide the resistance for indicating line 67
The signal of anti-value.The reading circuit of each pixel is coupled to line and column selection by line decoder and the control of column decoder (not shown)
Select circuit (not shown).In this embodiment, the oscillator 33 of each pixel 63 and (in some embodiments) detection circuit 65
It is shielded by shielded layer 71 (for example, metal layer), prevents the propagation of high frequency waves.
In operation, the oscillator 33 of each pixel is by being for example coupled to transmission line 67 by the detection circuit of pixel 65
DC voltage source biasing.Therefore, oscillator 33 provides the terahertz signal with frequency f and wavelength X to transmission line 67.
Fig. 6 and Fig. 7 is the sectional view in the plane BB of the sectional view and Fig. 5 in the plane AA of Fig. 5 respectively.
Fig. 6 shows three transmission lines 67 of three pixels 63 of the imager of Fig. 5.Transmission line 67, which is formed in be buried in, to be located at
In the metalization layer in insulating layer 73 on semiconductor support object 75.Each transmission line includes the conductive strips 79 to form ground plane
On micro-strip 77.The micro-strip 77 of each transmission line 67 is covered by the insulating layer with the thickness for being less than λ and preferably smaller than 0.1 λ,
Wherein λ is coupled to the wavelength of the signal of the oscillator of transmission line.
The object 81 to be analyzed is disposed in top surface or the activated surface of the picture element matrix against imager.Object can wrap
Include with differing dielectric constant and present the multiple material of heterogeneous effective dielectric constant.
As shown in the dotted line as the right-hand side pixel of Fig. 6, when the terahertz signal of frequency f and wavelength X are applied to transmission
When line 67, THz electric field is radiated from micro-strip 77 to ground plane 79, and a part of field is leaked to except imager element.This
A little THz electric fields penetrate the superficial layer of the object 81 to be analyzed.Term " analysis depth " refers to the object that these THz waves penetrate
Superficial layer thickness.Analysis depth has the order of magnitude of several wavelength Xs, for example, within the scope of 3 λ, that is, be equal in frequency f
It is 0.1mm to 0.3mm in the case where 3THz, and is 1mm to 3mm in the case where frequency f is equal to 300GHz.
The effective dielectric constant and the object on the transmission line that the impedance of transmission line 67 depends on imager element
The effective dielectric constant of 81 material, therefore (being positioned under heterogeneous 83) two for being arranged in Fig. 6 right side
Pixel and the pixel in the left side for being arranged in Fig. 6 will be different.Therefore, from the output signal set of the pixel of imager
Obtain the image of the dielectric constant of the material of the top layer of object 81.Therefore the resolution ratio of imager corresponds to the size of its pixel.
For example, each pixel can have 20 to 50 in the case where the oscillator 33 with 5 phase inverters provides signal with 600GHz
μm lateral dimension.
The characteristic of pixel disclosed above is that the transmission line 67 of each pixel is used as irradiating the object to be analyzed
A part THz wave transmitter, and used also as associated with the effective dielectric constant of the part for capturing
The detector of signal.
As an example, semiconductor support object 75 is bulk silicon substrate or SOI type (" silicon-on-insulator ") substrate, imager
Electronic component (the especially transistor of pixel) formed wherein.The supporter is by the electronics that is formed in semiconductor support object
The metalization layer of the interconnection structure of component covers.The micro-strip 77 and ground plane 79 of transmission line 67 are formed in these metalization layers
In.
It is the skin of people by the object 81 that the imager of Fig. 5 is analyzed, it is desirable to fixed in this case in sample application
Position cancer cell.For example, if cancer cell than healthy cell includes more moisture content, their dielectric constant and healthy cell
Dielectric constant is different, and can detecte and position this heterogeneity of dielectric constant.
In another example, to be analyzed object is liquid, such as blood, and it is desirable to know to have not in this case
It is same as the concentration and/or movement of the suspended solid element of the dielectric constant of liquid.
Fig. 7 is the sectional view in the plane BB of Fig. 5, and shows shielded transmission line, for example, transmission line 39.It passes
Defeated line 39 and shielded layer 71 are formed in metalization layer.The presence of shielded layer 71 means that the function of transmission line is not dependent on and wants
The material of the superficial layer of analyzed object.
In a variation, transmission line 39 and 43 is not shielded.Therefore, the transmission line 39,43 of each pixel
Impedance depend on the object seen by the pixel, and therefore the frequency f of oscillator changes.Can with measurement frequency f and/or at
As the output voltage or electric current of the variation of the pixel of device are to reconstruct the image of the material of the superficial layer for the object to be analyzed.It is practical
On, the design of transmission line and oscillator can be modified to certain dielectric constant range or to broad-band sensitive.
Specific embodiment has been disclosed.Deformation and modification will be showed to those skilled in the art.Particularly, can make
With the transmission line different from transmission line disclosed above, for example, coplanar transmission.
It can be replaced by other any oscillators comprising oscillator in each pixel, for example, in Y.M.Tousi et al.
It is published in Solid-state Circuits Conference Digest of Technical Papers (ISSCC),
2012IEEE International, article " the A 283-to-296GHz VCO with 0.76mW in the 258-260 pages
Disclosed in Peak Output Power in 65nm CMOS ".
In fact, the pixel 63 of imager is not read simultaneously.For example, pixel is read by sequence one by one.Therefore, example
These pixels can such as be closed by way of not by the oscillator bias for the pixel not being read.
In some embodiments, imager matrix 61 analyzes superficial layer in multiple analysis depths.For example, some pixels 63
The transmission line of group is covered by the insulating layer thicker than the transmission line of other pixel groups.Additionally or alternatively, some pixel groups
Oscillator operates under the frequency different from the frequency of the oscillator of other pixel groups.
Although disclosed above is terahertz imaging device, it is noted that specification be suitable for any near field high frequency at
As device, medium-high frequency indicates 10GHz or higher frequency.
Various embodiments and variation has been disclosed.It will be apparent to those skilled in the art that various in various embodiments
Element can be combined in any combination in no Promethean situation.
Above-mentioned various embodiment combinations can be provided to other embodiment.Quoted in this specification and/or
United States Patent (USP), U.S. Patent Application Publication, U.S. Patent application, the foreign patent, foreign patent Shen listed in application materials table
Please it is incorporated by reference in its entirety herein with non-patent publications.If desired, the aspect of embodiment can be modified to adopt
Other embodiment is provided with various patents, application and disclosed concept.
These and other changes can be made to embodiment in view of foregoing detailed description.In general, the right in accompanying is wanted
It asks in book, the term used is not construed as claims being limited to disclosed in the specification and claims
Specific embodiment, but it should be interpreted as including all possible embodiment, it is imparted into together with the claims
The full scope of equivalent program.Therefore, claims are not limited by the disclosure.
Claims (17)
1. a kind of high frequency imager, comprising:
Picture element matrix, each pixel include:
High frequency oscillator；
Transmission line is positioned at the following distance of the activated surface away from the imager, which is less than the oscillator
Operative wavelength, the first end of the transmission line are coupled to the oscillator；And
Reading circuit is coupled to the second end of the transmission line.
2. imager according to claim 1, wherein the reading circuit of each pixel, which provides, indicates the transmission line
Impedance signal.
3. imager according to claim 1, wherein the oscillator of each pixel includes second transmission line.
4. imager according to claim 3, wherein adapting to prevent the layer of the propagation of high frequency waves at least to cover described the
Two transmission lines.
5. imager according to claim 3, wherein the reading circuit of pixel, which provides, indicates the described of the pixel
The signal of the frequency of oscillator.
6. imager according to claim 1, wherein the transmission line is microstrip-type.
7. imager according to claim 1 is adapted to the frequency operation in the range of 0.3 to 3THz.
8. a kind of imaging circuit, comprising:
Semiconductor support object；
Insulating layer is formed on the semiconductor support object, and the insulating layer has activated surface；
Picture element matrix is formed in the semiconductor support object and the insulating layer, and the picture element matrix includes multiple pixels, often
A pixel includes,
Pierce circuit has operative wavelength；
Reading circuit；And
First transmission line is coupled between the pierce circuit and the reading circuit, and the first transmission line is formed in institute
It states at the following distance in insulating layer, away from the activated surface, which is less than the operative wavelength of the pierce circuit.
9. imaging circuit according to claim 8, wherein the first transmission line of each pixel includes coplanar transmission.
10. imaging circuit according to claim 8, wherein the first transmission line of each pixel includes micro-strip transmission
Line, the microstrip transmission line include micro-strip part and conductive strap portion, the micro-strip part is formed in the insulating layer, away from
At distance described in the activated surface, and the conductive strap portion is formed on the surface of the semiconductor support object.
11. imaging circuit according to claim 10, wherein the pierce circuit of each pixel includes multiple second
Transmission line.
12. imaging circuit according to claim 11, wherein each second transmission line in the multiple second transmission line
Including the micro-strip transmission being formed in the insulating layer.
13. imaging circuit according to claim 12, wherein each second transmission line in the multiple second transmission line
It further include the shielded layer being formed on the activated surface of the insulating layer.
14. imaging circuit according to claim 13, wherein the shielded layer is formed on the activated surface, in the vibration
It swings on device circuit and on the reading circuit but is not covered with the first transmission line.
15. imaging circuit according to claim 14, wherein each second transmission line in the second transmission line is formed
The inductance component of the pierce circuit.
16. imaging circuit according to claim 15, wherein each pierce circuit includes the annular comprising N number of phase inverter
Pierce circuit, N are odd-integral number, and wherein the second transmission line and N number of phase inverter interconnect.
17. imaging circuit according to claim 8, wherein the semiconductor support object includes bulk silicon substrate and insulator
One of upper silicon substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1553569 | 2015-04-21 | ||
| FR1553569A FR3035499A1 (en) | 2015-04-21 | 2015-04-21 | IMAGEUR TERAHERTZ IN NEAR FIELD |
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| Publication Number | Publication Date |
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| CN106067950A CN106067950A (en) | 2016-11-02 |
| CN106067950B true CN106067950B (en) | 2019-04-26 |
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| CN201510813139.2A Active CN106067950B (en) | 2015-04-21 | 2015-11-20 | Near field terahertz imaging device |
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| US (1) | US9464933B1 (en) |
| EP (1) | EP3086101B1 (en) |
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| FR (1) | FR3035499A1 (en) |
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| FR3035499A1 (en) * | 2015-04-21 | 2016-10-28 | St Microelectronics Sa | IMAGEUR TERAHERTZ IN NEAR FIELD |
| FR3079665A1 (en) | 2018-03-28 | 2019-10-04 | Hani Sherry | IMAGEUR TERAHERTZ WITH CLOSE FIELD |
| CN112557762B (en) * | 2019-09-25 | 2022-09-02 | 天津大学 | High-precision terahertz near field imaging array unit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101526464A (en) * | 2008-03-05 | 2009-09-09 | 清华大学 | Phase contrast imaging method and device |
| CN102668370A (en) * | 2009-12-25 | 2012-09-12 | 佳能株式会社 | Terahertz oscillator with strain induced frequency control |
| US8895913B2 (en) * | 2012-12-17 | 2014-11-25 | Wave Works, Inc. | Traveling wave based THz signal generation system and method thereof |
| CN205249361U (en) * | 2015-04-21 | 2016-05-18 | 意法半导体有限公司 | High frequency imager and formation of image circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20110129970A (en) * | 2009-03-20 | 2011-12-02 | 솔리아니스 홀딩 아게 | Device for electrically measuring at least one parameter of a mammal's tissue |
| FR2995449A1 (en) * | 2012-09-12 | 2014-03-14 | St Microelectronics Sa | IMAGEUR TERAHERTZ |
| FR2995475A1 (en) * | 2012-09-12 | 2014-03-14 | St Microelectronics Sa | HIGH FREQUENCY OSCILLATOR |
-
2015
- 2015-04-21 FR FR1553569A patent/FR3035499A1/en active Pending
- 2015-10-22 EP EP15191131.0A patent/EP3086101B1/en active Active
- 2015-10-22 US US14/920,373 patent/US9464933B1/en active Active
- 2015-11-20 CN CN201520935000.0U patent/CN205249361U/en active Active
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101526464A (en) * | 2008-03-05 | 2009-09-09 | 清华大学 | Phase contrast imaging method and device |
| CN102668370A (en) * | 2009-12-25 | 2012-09-12 | 佳能株式会社 | Terahertz oscillator with strain induced frequency control |
| US8895913B2 (en) * | 2012-12-17 | 2014-11-25 | Wave Works, Inc. | Traveling wave based THz signal generation system and method thereof |
| CN205249361U (en) * | 2015-04-21 | 2016-05-18 | 意法半导体有限公司 | High frequency imager and formation of image circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106067950A (en) | 2016-11-02 |
| EP3086101B1 (en) | 2022-05-18 |
| CN205249361U (en) | 2016-05-18 |
| EP3086101A1 (en) | 2016-10-26 |
| US9464933B1 (en) | 2016-10-11 |
| US20160313177A1 (en) | 2016-10-27 |
| FR3035499A1 (en) | 2016-10-28 |
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