CN106067485B - A kind of metal-active layer-anti-reflecting layer nanowire solar cells - Google Patents
A kind of metal-active layer-anti-reflecting layer nanowire solar cells Download PDFInfo
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- CN106067485B CN106067485B CN201610559814.8A CN201610559814A CN106067485B CN 106067485 B CN106067485 B CN 106067485B CN 201610559814 A CN201610559814 A CN 201610559814A CN 106067485 B CN106067485 B CN 106067485B
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention provides a kind of metal active layer anti-reflecting layer nanowire solar cells, periodically placed along one-dimensional square by semiconductor nanowires unit, form cycle structure array；Semiconductor nanowires unit is sequentially coaxially set and constituted from the inside to the outside by metal, active layer and anti-reflecting layer.When light is incident, anti-reflecting layer enhancing light incides the energy of active layer；When light is incident to active layer, Whispering-gallery-mode is motivated, the light wave for meeting the pattern is propagated in active layer；When light wave is incident to active layer and metallic interface, metallic surface plasma excimer is motivated, the light wave for meeting the flux matched wavelength of wave vector is absorbed.The present invention can be achieved to the light wave for meeting the flux matched wavelength of wave vector close to 100% absorptivity, while anti-reflecting layer can be as positive electrode, metal is as dorsad electrodes conduct, and in forward direction and dorsad between electrode, loaded circuit can realize effective photoelectric conversion.Material of the present invention is widely applicable, and manufacturing process is simple, and full spectrum high-absorbility can be achieved.
Description
Technical field
The present invention relates to a kind of solar cell, more particularly to a kind of semiconductor material thicknesses are in tens nanometers of film-type
High-absorbility solar cell.
Background technology
With the fast development of nanometer technology and Nano Scale Electronics Technology, metallic surface plasma excimer (Surface
Plasmon polaritons, SPPs) turn into an emerging research direction in recent years.SPPs is when electromagnetic wave incident to gold
Category and dielectric surface, the surface electromagnetic wave vibration produced at interface, its electric-field intensity are maximum in metal surface, with vertical
Exponentially decay in the increase of the distance of interface.Therefore, SPPs is a kind of surface wave, and its electromagnetic field is constrained on metal
In the scope near dielectric interface.SPPs can break through diffraction limit, and electromagnetic wave is constrained in the range of sub-wavelength dimensions
Propagate.Metal material, sub-wavelength structure and metal surface medium all can produce influence to SPPs, at present, and SPPs effects should
Used in multiple fields such as solar energy, waveguide transmission, resonator, laser amplifier, sensing and imagings.
There is expert to propose anti-reflecting layer semiconductor absorbed layer-silver-colored three layer planes structure in 2014, wherein semiconductor is inhaled
The thickness of layer is received in tens rans.When light wave is incident from air side, meets the flux matched light wave of wave vector and inhaled in semiconductor
Receive layer and silver-colored interface motivates SPPs, SPPs is propagated and by semiconductor absorption layer along semiconductor absorption layer and silver-colored interface direction
Absorb.The structure can be realized to meeting the flux matched light wave 100% of wave vector in visible light wave range (400 nanometers~800 nanometers)
Absorptivity, effective absorption of solar energy can be realized using the structure.But the structure can only realize visible light wave range pair
The absorption of some energy of specific wavelength light wave 100%.
Whispering-gallery-mode (whispering gallery modes, WGM) is a kind of ripple class that can be propagated around concave curved surface
Type.It is the sound wave propagated in the whispering gallery of St. Paul's Cathedral to be originally found WGM.In recent years, it is operated in the WGM resonance of optical band
Chamber is successfully studied and applied in a variety of optical devices such as laser, wave filter, sensor and wave mixing device.Answered above-mentioned
In, quality factor (Q) value of WGM resonators is typically higher, and scope is from 105-109, even more high, because the WGM of high q-factor
Resonator energy leakage is small, frequency selectivity is high, but is optically coupled into the less efficient of resonator.On the other hand, WGM equally may be used
So that applied to sunshine band broadband absorbing material, this application then requires that the characteristic of WGM resonators has high-absorbility, low frequency
Rate selectivity and the characteristic of close coupling, i.e. the WGM Q values of cavity are relatively low.
There is expert to propose a kind of microcrystalline silicon materials spherical nanoparticle of periodic arrangement, the thickness of nano particle in 2011
Degree is in 50nm or so, and this geometrical form has low reactance-resistance ratio WGM modes of resonance, can promote the sun optically coupling to WGM resonant modes
Formula, improves light path of the light in microcrystalline silicon materials, so as to improve the absorptivity of light.But structure forward direction and dorsad conductive electrode
Not easy processing so that production solar cell device is more difficult；Although it is positive and dorsad conductive electrode can be processed in ball respectively
Upper and lower sides of shape nano particle, but because the planform is spherical, work in-process easily causes positive and dorsad between electrode
Connect and cause short circuit.
When sunshine is from air incidence to semiconductor active layer, led because air is different with the refractive index of semi-conducting material
Cause sunshine can both interfaces produce reflection loss, conventional method be plated in semiconductor material surface it is conductive
Anti-reflection film (Anti-reflection Coating, ARC), such as tin-doped indium oxide (ITO) or Al-Doped ZnO (ZnO：
) etc. Al transparent conductive film, is realizing that enhancing is light transmissive while as positive electrodes conduct.
SPPs, WGM and ARC advantage are how played, while overcoming SPPs, WGM shortcoming, a kind of semi-conducting material is formed
Film-type high-absorbility solar cell of the thickness in the range of sub-wavelength, is the difficulty that those skilled in the art are directed to solving
Topic.
The content of the invention
The present invention is to solve thin film solar cell absorption characteristic it is undesirable, for full spectrum absorption it is insufficient
And solar cell device positive and negative electrode processes more difficult technical problem.
In order to solve the above-mentioned technical problem, received the technical scheme is that providing a kind of metal-active layer-anti-reflecting layer
Rice noodles solar cell, it is characterised in that：Periodically placed along one-dimensional square by semiconductor nanowires unit, form periodic structure
Array；The semiconductor nanowires unit is sequentially coaxially set and constituted from the inside to the outside by metal, active layer and anti-reflecting layer.
Preferably, the metal is cylinder, and the active layer is cylindrical ring structure, and the anti-reflecting layer is also cylinder ring
Structure.
Preferably, the metallic radius is 100nm~200nm.
Preferably, the active layer internal diameter is identical with the metal external diameter, and the active layer external diameter is than the metal external diameter
Big 30nm~100nm.
Preferably, the anti-reflecting layer internal diameter is identical with the active layer external diameter, and the anti-reflecting layer external diameter than described in has
Big 30nm~the 100nm of active layer external diameter.
Preferably, the metal is made up of electrode silver, gold or aluminium.
Preferably, the active layer is made up of semi-conducting material silicon substrate, germanium or GaAs.
Preferably, the anti-reflecting layer is by anti-reflection transparent conductive material ITO or ZnO：Al is made.
Preferably, it is described when visible ray is incident, the energy that light incides active layer is strengthened by anti-reflecting layer；When light enters
When being incident upon active layer, Whispering-gallery-mode is motivated, the light wave for meeting Whispering-gallery-mode is propagated in active layer；When the light wave enters
The friendship of metallic surface plasma excimer SPPs, SPPs along active layer and metal is motivated when being incident upon the interface of active layer and metal
Interface is propagated, and the light wave ability for meeting the flux matched wavelength of wave vector is absorbed.
Preferably, the anti-reflecting layer is as positive electrodes conduct, and the metal is used as dorsad electrodes conduct.
Semiconductor nanowires are periodically placed and form cycle structure array by the present invention along one-dimensional square, in semiconductor nano
The inside of line introduces metal column, in the conductive anti-reflecting layer ARC of semiconductor nanowires outer wrap, forms a kind of gold
Category-active layer-anti-reflecting layer nanowire solar cells structure.When visible ray is incident to the structure, ARC layer can strengthen light
Incide semiconductor material layer and as positive electrodes conduct.Metal column can be realized when sunshine is incident in semi-conducting material
Portion motivates SPPs and WGM patterns, conductive at the same time as dorsad metal electrode so that light path increase, light are reclaimed enhancing, light and inhaled
Receive increase.Compared with the flat thin membranous type solar cell with identical physical dimension, the absorptivity enhancing of this solar cell
62%.
Compared with prior art, the solar battery structure that the present invention is provided has the advantages that：
It is (1) of the invention by introducing metal column inside the nanowires of semiconductor material with One Dimension Periodic arranged distribution,
When sunshine is incident to the interface of semi-conducting material and metal column, SPPs can be motivated, can be realized pair by parameter optimization
The light wave of the flux matched wavelength of wave vector is met close to 100% absorptivity.
It is (2) of the invention by introducing metal column inside the nanowires of semiconductor material with One Dimension Periodic arranged distribution,
So that nanowires of semiconductor material formation nm cylinder ring, WGM patterns can be motivated when sunshine is incident to nm cylinder ring,
The light wave for meeting WGM modes of resonance can be along nm cylinder ring internal communication, so as to improve light wave inside semi-conducting material
Light path and light are reclaimed, and improve the absorption efficiency of sunshine.
(3) in the present invention, the metal column inside nanowires of semiconductor material has excitation SPPs and as dorsad metal
The function of electrode, the anti-reflecting layer of nanowires of semiconductor material outer wrap is made up of transparent conductive material, with the enhancing sun
Light is incident and is used as the function of forward conduction electrode.By the way that in forward direction and dorsad between electrode, loaded circuit can realize effective light
Electricity conversion.
(4) present invention is not relied on strictly for semiconductor nanowire material, and many has high-absorbility in visible light wave range
The semi-conducting material such as silicon substrate, germanium, GaAs, CIGS can use, while interior metal column material can be used in solar-electricity
The materials such as silver, gold, the aluminium commonly used in pond, it is so smaller by the factor that technique is limited.
Brief description of the drawings
Fig. 1 shows for metal-active layer-anti-reflecting layer nanowire solar cells that the present embodiment is provided a cycle
It is intended to；
Metal-active layer that Fig. 2 provides for the present embodiment-anti-reflecting layer nanowire solar cells overall structure signal
Figure；
Fig. 3 contrasts for the solar cell that the present embodiment is provided with the absorptivity of the flat board monocrystalline silicon of identical physical dimension
Figure.
Embodiment
With reference to specific embodiment, the present invention is expanded on further.It should be understood that these embodiments are merely to illustrate the present invention
Rather than limitation the scope of the present invention.In addition, it is to be understood that after the content of the invention lectured has been read, people in the art
Member can make various changes or modifications to the present invention, and these equivalent form of values equally fall within the application appended claims and limited
Scope.
Metal-active layer-anti-reflecting layer the nanowire solar cells provided as shown in Figure 1 for the present embodiment are in a week
The schematic diagram of phase, its structure is respectively from inside to outside：
Metal 1, its material is silver, and radius is 145nm；
Active layer 2, it is wrapped in the outside of metal 1, and its material is monocrystalline silicon, and radius is 225nm, and thickness is 80nm；
Anti-reflecting layer 3, it is wrapped in the outside of active layer 2, and its material is ZnO：Al, its refractive index in visible light wave range
Usually 1.92, radius is 265nm, and thickness is 40nm.
Metal 1, active layer 2, anti-reflecting layer 3 constitute an overall structure, by the overall structure along one-dimensional square periodically
The practical structures for metal-active layer-anti-reflecting layer nanowire solar cells that arrangement form the present embodiment is provided, such as Fig. 2 institutes
Show, the cycle is 460nm.
Anti-reflecting layer 3 is placed on to the outside of active layer 2, can promote incident sunshine from air to active layer 2 coupling
Close.Anti-reflecting layer 3 is formed by transparent conductive material, can be simultaneously as the positive electrode of solar cell.
By introducing metal 1 inside active layer 2 so that the formation cylindrical annular structure of active layer 2, when sunshine is incident to
WGM patterns can be motivated during active layer 2, meeting the light wave of WGM modes of resonance can propagate in active layer 2, light path increase, light
Influx and translocation.When sunshine is incident to the interface of active layer 2 and metal 1, SPPs can be motivated, SPPs is along the He of active layer 2
The interface of metal 1 is propagated, and meets the light wave of the flux matched wavelength of wave vector with the absorptivity close to 100%.Metal 1 can be simultaneously
It is used as the dorsad electrode of solar cell.
Metal 1, active layer 2 and anti-reflecting layer 3 processing can using conventional physical chemistry vapour deposition (PCVD) or
The modes such as femtosecond laser etching, and then realize integral battery door structure.
The sunshine normal incidence of TM polarizations is to this solar cell surface.In view of sunshine under the conditions of AM1.5 light intensity
It is mainly distributed on visible ray and infrared band, the corresponding optical wavelength of energy gap of monocrystalline silicon, the reference set by the present embodiment
Optical band is 300nm~1100nm.
Fig. 3 be thickness be 80nm flat board monocrystalline silicon (back side be coated with thickness be 145nm silver, front is coated with thickness and is
40nm ZnO：Al absorptivity and the absorptivity comparison diagram of the solar cell of the present embodiment).From figure 3, it can be seen that
The absorptivity of the solar cell of the present embodiment is higher than the flat board monocrystalline silicon with identical physical dimension in reference light wave band.
Quantification treatment is carried out to two curves in Fig. 3 using short-circuit current density, the solar energy of the present embodiment can be obtained
The short-circuit current density of battery is 19.22mA/cm2, the short-circuit current density for the flat board monocrystalline silicon that thickness is 80nm is
11.86mA/cm2.Compared with the flat board monocrystalline silicon with physical dimension, the short-circuit current density of the solar cell of the present embodiment is carried
It is high by 62%.
Claims (8)
1. a kind of metal-active layer-anti-reflecting layer nanowire solar cells, it is characterised in that：By semiconductor nanowires list
Member is periodically placed along one-dimensional square, forms cycle structure array；The semiconductor nanowires unit is by metal (1), active layer
(2) sequentially coaxially set constitute from the inside to the outside with anti-reflecting layer (3)；
When visible ray is incident, the energy that light incides active layer (2) is strengthened by anti-reflecting layer (3)；When light be incident to it is active
During layer (2), Whispering-gallery-mode is motivated, the light wave for meeting Whispering-gallery-mode is propagated in active layer (2)；When the light wave is incident
To active layer (2) and metal (1) interface when, motivate metallic surface plasma excimer SPPs, SPPs along active layer (2) and
The interface of metal (1) is propagated, and the light-wave energy for meeting the flux matched wavelength of wave vector is absorbed；
The anti-reflecting layer (3) is used as dorsad electrodes conduct as positive electrodes conduct, the metal (1).
2. a kind of metal-active layer-anti-reflecting layer nanowire solar cells as claimed in claim 1, it is characterised in that：
The metal (1) is cylinder, and the active layer (2) is cylindrical ring structure, and the anti-reflecting layer (3) is also cylindrical ring structure.
3. a kind of metal-active layer-anti-reflecting layer nanowire solar cells as claimed in claim 2, it is characterised in that：
Metal (1) radius is 100nm~200nm.
4. a kind of metal-active layer-anti-reflecting layer nanowire solar cells as claimed in claim 3, it is characterised in that：
Active layer (2) internal diameter is identical with the metal (1) external diameter, and active layer (2) external diameter is bigger than the metal (1) external diameter
30nm~100nm.
5. a kind of metal-active layer-anti-reflecting layer nanowire solar cells as claimed in claim 4, it is characterised in that：
Anti-reflecting layer (3) internal diameter is identical with the active layer (2) external diameter, and anti-reflecting layer (3) external diameter is than the active layer (2)
Big 30nm~the 100nm of external diameter.
6. a kind of metal-active layer-anti-reflecting layer nanowire solar cells as described in any one of claims 1 to 3, its
It is characterised by：The metal (1) is made up of electrode silver, gold or aluminium.
7. a kind of metal-active layer-anti-reflecting layer nanowire solar cells as described in any one of Claims 1 to 4, its
It is characterised by：The active layer (2) is made up of semi-conducting material silicon substrate, germanium or GaAs.
8. a kind of metal-active layer-anti-reflecting layer nanowire solar cells as described in any one of Claims 1 to 5, its
It is characterised by：The anti-reflecting layer (3) is by anti-reflection transparent conductive material ITO or ZnO:Al is made.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101292365A (en) * | 2005-06-17 | 2008-10-22 | 依路米尼克斯公司 | Photovoltaic wire |
| CN101627479A (en) * | 2007-01-30 | 2010-01-13 | 索拉斯特公司 | Photovoltaic cell and method of making thereof |
| CN102983215A (en) * | 2012-11-19 | 2013-03-20 | 中国科学院半导体研究所 | Method for preparing silicon thin-film solar cells with silicon nano-wire structures |
| CN103296123A (en) * | 2013-05-15 | 2013-09-11 | 合肥工业大学 | P-type carbon quantum dot/N-type silicon nano-wire array hetero-junction solar cell and method for manufacturing same |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101292365A (en) * | 2005-06-17 | 2008-10-22 | 依路米尼克斯公司 | Photovoltaic wire |
| CN101627479A (en) * | 2007-01-30 | 2010-01-13 | 索拉斯特公司 | Photovoltaic cell and method of making thereof |
| CN102983215A (en) * | 2012-11-19 | 2013-03-20 | 中国科学院半导体研究所 | Method for preparing silicon thin-film solar cells with silicon nano-wire structures |
| CN103296123A (en) * | 2013-05-15 | 2013-09-11 | 合肥工业大学 | P-type carbon quantum dot/N-type silicon nano-wire array hetero-junction solar cell and method for manufacturing same |
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