CN106061093A - Waveguide system for electron linear accelerator and electron linear accelerator - Google Patents

Waveguide system for electron linear accelerator and electron linear accelerator Download PDF

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Publication number
CN106061093A
CN106061093A CN201610633029.2A CN201610633029A CN106061093A CN 106061093 A CN106061093 A CN 106061093A CN 201610633029 A CN201610633029 A CN 201610633029A CN 106061093 A CN106061093 A CN 106061093A
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port
waveguide
wave guide
guide system
branch arm
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CN106061093B (en
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刘耀红
刘晋升
李国华
李健
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Nuctech Co Ltd
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Nuctech Co Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/22—Details of linear accelerators, e.g. drift tubes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H9/00—Linear accelerators

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  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Particle Accelerators (AREA)

Abstract

The invention discloses a waveguide system for an electron linear accelerator and the electron linear accelerator with the waveguide system. The waveguide system comprises a first H-T waveguide and a second H-T waveguide; the first H-T waveguide comprises a first main waveguide portion and a first branch arm portion, the two ends of the first main waveguide portion include first and second ports respectively, the first branch arm portion includes a third port, and the third port is connected to a power source and configured to receive microwave input from the power source; and the second H-T waveguide comprises a second main waveguide portion and a second branch arm portion, the two ends of the second main waveguide portion include fourth and fifth ports respectively, the second branch arm portion includes a sixth port, the fourth and fifth ports are connected to the first and second ports of the first H-T waveguide respectively, and configured to receive microwave transmission from the first H-T waveguide, and the sixth port is connected to an accelerator coupler and configured to output microwaves to the accelerator coupler.

Description

Wave guide system and electron linear accelerator for electron linear accelerator
Technical field
The present invention relates to accelerator field, more particularly to a kind of Wave guide system for electron linear accelerator and tool There is the electron linear accelerator of this Wave guide system.
Background technology
Electron linear accelerator is that electronics is accelerated in the effect utilizing microwave electromagnetic field, is allowed to carry high-octane equipment.Utilize The electron beam that accelerator produces all has wide practical use at the aspect such as scientific research, industry, such as medical treatment, irradiation, imaging etc..
In existing scientific research and industrial electronic linear accelerator system, because radio-frequency pulse power and mean power are the most on the low side, So radio-frequency power by the Wave guide system of power source to accelerator bonder only with unicast guide structure.But, big when using During power accelerator system, need higher radio-frequency power (typically requiring pulse power 5MW, more than mean power 40kW), existing Some Wave guide systems just show slightly not enough.Specifically, because of technique and the restriction of applying working condition, waveguide window is applied to high-power acceleration Time in device system, fracture phenomena can be there is.But, damaged principle therein is extremely complex, in scientific research, needs by multiple prison Survey means (such as, brightness monitoring, temperature monitoring and Wave guide system standing-wave ratio protection etc.) monitor the duty of waveguide window in real time, To ensure its nominal situation.The use of these complicated monitoring meanss significantly limit waveguide window and adds at industrial great-power electronic Range of application in speed device and reliability.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention proposes a kind of for electron linear accelerator Wave guide system.
According to an aspect of the present invention, it is proposed that a kind of Wave guide system for electron linear accelerator.This waveguide system System includes: a H-T waveguide, including the first main waveguides sections and the first branch arm part, the two of described first main waveguides sections End has the first port and the second port, and described first branch arm part has the 3rd port, and wherein, described 3rd port connects To power source, it is configured to receive the microwave from power source and inputs；And the 2nd H-T waveguide, including the second main waveguides sections With the second branch arm part, the two ends of described second main waveguides sections have the 4th port and fifth port, described second branch Arm section has the 6th port, and wherein, described 4th port and fifth port are connected respectively to the first of a described H-T waveguide Port and the second port, be configured to receive the microwave transmission from a described H-T waveguide, and described 6th port connects To accelerator bonder, it is configured to carry out microwave output to described accelerator bonder.
Preferably, the 4th port and the fifth port of described 2nd H-T waveguide is connected to institute via waveguide isolation window respectively State the first port and second port of a H-T waveguide.
Preferably, a described H-T waveguide and/or described 2nd H-T waveguide have symmetrical structure.
Preferably, between the first port and second port of a described H-T waveguide midpoint with from the first port to Oneth H-T waveguide is divided into two parts that minute surface is symmetrical by the vertical plane in the direction of the second port.Additionally or alternatively, described Between 4th port and the fifth port of the 2nd H-T waveguide, midpoint is vertical to the direction of fifth port with from the 4th port 2nd H-T waveguide is divided into two parts that minute surface is symmetrical by plane.
Preferably, described 2nd H-T waveguide is internal is vacuum, and is filled with lithium inside a described H-T waveguide Sulfur gas.
Preferably, the maximum field intensity in the chamber of a described H-T waveguide is less than the disruptive field intensity of sulfur hexafluoride gas.
Preferably, in relative with the first branch arm part in the cavity of the first main waveguides sections of a H-T waveguide Being provided with the first fin on wall, this first fin is positioned at vertical to the direction of the second port, by described with from the first port In the plane that one branch arm part is divided equally.Additionally or alternatively, in the cavity of the second main waveguides sections of the 2nd H-T waveguide Being provided with the second fin on the inwall relative with the second branch arm part, this second fin is positioned at and from the 4th port to the 5th end In the direction plane vertical, that described second branch arm part is divided equally of mouth.
Preferably, described first fin and/or described second fin be sized so that described 3rd port and/ Or the 6th the reflection loss of port less than 20.8dB.
Preferably, in a described H-T waveguide the first port and the second port from the first port to the side of the second port In position upwards and/or described 2nd H-T waveguide, the 4th port and fifth port are in the side from the 4th port to fifth port Position upwards is arranged to maximize the conjunction being input to the microwave transmission the 2nd H-T waveguide from the 4th port and fifth port Become efficiency.
According to a further aspect in the invention, a kind of electron linear accelerator is additionally provided.This electron linear accelerator includes According to the Wave guide system described above for electron linear accelerator.
In high-power accelerator system, by using the waveguide system for electron linear accelerator provided herein System, it is possible to efficiently and reliably by HIGH-POWERED MICROWAVES by the high-power accelerating tube of power source feed-in, and ensure stablizing of Wave guide system Run.
Accompanying drawing explanation
Fig. 1 shows the structure chart of a kind of exemplary H-T waveguide.
Fig. 2 shows that the structure for the Wave guide system of electron linear accelerator according to an embodiment of the invention is shown It is intended to.
Fig. 3 shows the structure chart of a kind of preferred H-T waveguide in Wave guide system according to an embodiment of the invention.
Detailed description of the invention
The specific embodiment of the present invention is described more fully below, it should be noted that the embodiments described herein is served only for citing Illustrate, be not limited to the present invention.In the following description, in order to provide thorough understanding of the present invention, elaborate a large amount of spy Determine details.It will be apparent, however, to one skilled in the art that, it is not necessary to carry out this by these specific detail Bright.In other instances, in order to avoid obscuring the present invention, do not specifically describe known structure, circuit, material or method.
Throughout the specification, " embodiment ", " embodiment ", " example " or " example " is mentioned meaning , the special characteristic, structure or the characteristic that describe in conjunction with this embodiment or example are comprised at least one embodiment of the present invention. Therefore, in the phrase " in one embodiment " of each local appearance, " in an embodiment ", " example " of entire disclosure Or " example " is not necessarily all referring to same embodiment or example.Furthermore, it is possible to any suitable combination and/or sub-portfolio by specific Feature, structure or property combination in one or more embodiments or example.Below with reference to accompanying drawing, the present invention is carried out specifically Describe.
Below in conjunction with in the description that technical scheme is carried out by accompanying drawing, the size of each element, ratio in accompanying drawing Example and position relationship are exemplary, and the illustrated connected mode between each element is also intended merely to illustrate, and it is equal It is not used in the restriction present invention.
H-T waveguide
In numerous microwave devices, for the microwave energy element that branch picks out from main waveguide is referred to as Waveguide branching Device, it is the one of microwave power divider part.Conventional Waveguide branching device has the double T waveguide of E-T waveguide, H-T waveguide and coupling. Technical scheme uses H-T waveguide.The branch arm of H-T waveguide is positioned on the face, narrow limit of main waveguide, and its axis is put down Row is in the magnetic direction of the TE10 mould of main waveguide.Fig. 1 shows the structure chart of a kind of exemplary H-T waveguide 100.At Fig. 1 In, the main waveguide two ends of H-T waveguide 100 have port 1 and 2, and its branch arm has port 3.It can be seen that this H-T waveguide Simple in construction, it is simple to process and debug.
The operating characteristic of H-T waveguide 100 is as follows:
When inputting from port 3, two ports 1 and 2 in main waveguide export constant amplitude homophase radio-frequency power；
When inputting constant amplitude homophase radio-frequency power from port 1 and 2, export the synthesis power of the two at port 3.Now, end Mouth 3 has maximum output, presents standing wave in main waveguide.In general, it is desirable to the voltage standing wave ratio of waveguide is (i.e. port 3 less than 1.2 The voltage standing wave ratio upper limit), accordingly, it would be desirable to the reflection loss of port 3 is less than 20.8dB.
Twi guide structure
Fig. 2 shows the knot of the Wave guide system 200 for electron linear accelerator according to an embodiment of the invention Structure schematic diagram.
Described Wave guide system 200 includes H-T waveguide 210 and a 2nd H-T waveguide 220.A described H-T waveguide 210 Including the first main waveguides sections (right half part of waveguide 210) and the first branch arm part (left-half of waveguide 210).Described The two ends of the first main waveguides sections have the first port 211 and the second port 212, and described first branch arm part has the 3rd end Mouth 213.Described 2nd H-T waveguide 220 includes the second main waveguides sections (left-half of waveguide 220) and the second branch arm part (right half part of waveguide 220).The two ends of described second main waveguides sections have the 4th port 221 and fifth port 222, described Second branch arm part has the 6th port 223.
It can be seen in fig. 2 that the 3rd port 213 of a described H-T waveguide 210 is connected to power source, and it is configured to Receive the microwave from power source to input.4th port 221 of described 2nd H-T waveguide 220 and fifth port 222 respectively via Waveguide isolation window is connected to the first port 211 and the second port 212 of a described H-T waveguide 210, and is configured to receive Microwave transmission from a described H-T waveguide 210.6th port 223 of described 2nd H-T waveguide 220 is connected to accelerator Bonder, and be configured to carry out microwave output to described accelerator bonder.
In one embodiment, described waveguide isolation window is pottery isolation window.
In one embodiment, a described H-T waveguide 210 and/or described 2nd H-T waveguide 220 have symmetrical structure. Preferably, between the first port 211 and second port 212 of a described H-T waveguide 210 midpoint with from the first port 211 Oneth H-T waveguide 210 is divided into two parts that minute surface is symmetrical by the plane vertical to the direction of the second port 212.Described 2nd H-T Waveguide 220 has similar architectural feature.
Preferably, described 2nd H-T waveguide 220 is internal is vacuum, and the inside of a H-T waveguide 210 is filled with six Sulfur fluoride (SF6) gas, to ensure being normally carried out of microwave transmission.
Fin
In Wave guide system according to an embodiment of the invention, the structure of H-T waveguide can be carried out special relating to, with Guarantee the requirement realizing voltage standing wave ratio as above less than 1.2.
Fig. 3 shows the structure chart of a kind of preferred H-T waveguide 310 in Wave guide system according to an embodiment of the invention. The main waveguides sections of described H-T waveguide 310 has port 311 and 312, and branch arm part has port 313.In H-T waveguide 310 Main waveguides sections cavity in be provided with fin on the inwall relative with branch arm part, described fin is positioned at and from port 311 to (as shown in phantom in Figure 3) in the direction plane vertical, that described branch arm part is divided equally of port 312.Logical Cross the parameters such as the optimization thickness of fin, height and end chamfer, the scattering parameter of each port can be adjusted.
Waveguide design optimizes
In H-T waveguiding structure designs, the setting of many kinds of parameters need to be considered.Such as, for separating the of microwave transmission In one H-T waveguide, need to consider maximum field strength and position etc. in the transmission parameter of each port, waveguide；Pass being used for synthesizing microwave In the 2nd defeated H-T waveguide, need two impacts synthesizing power phases difference considering to produce because of the existence of waveguide.Additionally, Also need to consider that mismachining tolerance is on power combing and the impact of equality power sharing.Design to parameters considers to illustrate below.
(1) H-T waveguide port scattering parameter design
For ensureing separation and the synthetic effect of microwave transmission, by fin structure as above, scattering parameter can be carried out Tuning.By optimizing the parameters such as the thickness of fin, height and end chamfer, the scattering parameter of each port can be adjusted, permissible Making the degree of unbalancedness of two ports of winner's waveguide less than 0.1dB, the reflection loss of the port of branch arm is less than 20.8dB, the fullest The afc voltage standing-wave ratio (VSWR) requirement less than 1.2.
(2) maximum field strength position and numerical value confirm
As it has been described above, in one embodiment, in order to ensure the normal transmission of HIGH-POWERED MICROWAVES transmission, at the cavity of waveguide In be filled with SF6Gas.In order to ensure the normal work of Wave guide system, it is required that SF6Gas is the most breakdown, thus need right In waveguide, maximum field intensity and the position of radio-frequency field are determined, to ensure that maximum field strength is less than SF6The disruptive field intensity of gas (8.9MV/m)。
(3) the synthesis power phases difference impact of H-T type Wave guide system
As described above in Example, the two-way microwave transmission through separating is each passed through pottery isolation window and enters vacuum system System, and synthesized by the 2nd H-T waveguide.Owing to two paths power attenuations may be different with phase shift, the effect meeting of synthesis It is affected.
Specifically, as a example by the H-T waveguide 100 in Fig. 1, it is used as microwave synthesis waveguide (the i.e. the 2nd H-T waveguide).Come From the two-way of port 2 and port 1 through the microwave transmission separated, synthesize in waveguide 100, and export from port 3.In theory On, it is assumed that port 2 and port 1 electric field amplitude are than for k, and phase contrast is θ, then the relation of its electric field is: E2=kE1Exp (j θ), from And its power relation meets P2=k2P1。
According to collision matrix:
1 2 1 - 1 2 - 1 1 2 2 2 0 E 1 kE 1 e j θ 0 = 1 2 E 1 ( 1 - ke j θ ) E 1 ( - 1 + ke j θ ) 2 E 1 ( 1 + ke j θ ) ,
Thus, combined coefficient η of H-T waveguide 100, it is represented by:
η = P Σ P 1 + P 2 = 1 2 1 + k 2 + 2 k c o s θ 1 + k 2 = 0.5 + k c o s θ 1 + k 2
According to above formula, when k=1 and phase difference θ are 0, combined coefficient is 100%.Table 1 below lists in difference Combined coefficient in the case of Amplitude Ratio and phase contrast.
Table 1
From table 1, combined coefficient will be had a huge impact by the phase contrast of two-way microwave transmission.It is thus possible to it is logical Cross the length to waveguide to be finely adjusted and tune combined coefficient.Specifically, as a example by described H-T waveguide 100, can be by port 1 It is set to maximize with the port 2 position on from port 1 to the direction of port 2 and is input to H-T waveguide from port 1 and port 2 The combined coefficient of the microwave transmission in 100.In a kind of alternative, it is also possible to by being provided for the H-T waveguide separated The position of port tune combined coefficient.
(4) scattering parameter is affected by machining error
Need to carry out tolerance simulation for mechanical parameters such as fin thickness, length and positions, and carry out for analog result Mismachining tolerance selects.Machine error crosses senior general affects power combining efficiency, increases reflection power, thus drops low-power transmission effect Really.
Effect
By using Wave guide system according to an embodiment of the invention, after cold survey experiment fine setting, port reflection power is little In 20.8dB, meet the range of Wave guide system.Through in-site installation, debug and use, in pulse power 5MW, mean power Under the conditions of 40kW, normal use adds up 4000 high pressure hour fault-free, verifies the practicality on high-power accelerator of this waveguiding structure Property, reliability.
Although exemplary embodiment describing the present invention with reference to several, it is to be understood that, term used is explanation and shows Example and nonrestrictive term.Owing to the present invention can be embodied as the spirit without deviating from invention or reality in a variety of forms Matter, it should therefore be appreciated that above-described embodiment is not limited to any aforesaid details, and the spirit that should be limited in appended claims Explain widely with in scope, therefore fall into the whole changes in claim or its equivalent scope and remodeling all should be the power of enclosing Profit requires to be contained.

Claims (10)

1. for a Wave guide system for electron linear accelerator, including:
Oneth H-T waveguide, including the first main waveguides sections and the first branch arm part, the two ends tool of described first main waveguides sections The first port and the second port, described first branch arm part is had to have the 3rd port,
Wherein, described 3rd port is connected to power source, is configured to receive the microwave from power source and inputs；And
2nd H-T waveguide, including the second main waveguides sections and the second branch arm part, the two ends tool of described second main waveguides sections The 4th port and fifth port, described second branch arm part is had to have the 6th port,
Wherein, described 4th port and fifth port are connected respectively to the first port and second port of a described H-T waveguide, It is configured to receive the microwave transmission from a described H-T waveguide, and
Described 6th port is connected to accelerator bonder, is configured to carry out microwave output to described accelerator bonder.
Wave guide system the most according to claim 1, wherein, the 4th port and the fifth port of described 2nd H-T waveguide are divided The first port and second port of a described H-T waveguide it is not connected to via waveguide isolation window.
Wave guide system the most according to claim 1, wherein, a described H-T waveguide and/or described 2nd H-T waveguide tool There is symmetrical structure.
Wave guide system the most according to claim 3, wherein,
Between first port and second port of a described H-T waveguide midpoint with from the first port to the side of the second port To vertical plane, the oneth H-T waveguide is divided into two parts of minute surface symmetry, and/or
Between 4th port and the fifth port of described 2nd H-T waveguide midpoint with the side from the 4th port to fifth port To vertical plane, the 2nd H-T waveguide is divided into two parts of minute surface symmetry.
Wave guide system the most according to claim 1, wherein, described 2nd H-T waveguide is internal is vacuum, and described first It is filled with sulfur hexafluoride gas inside H-T waveguide.
Wave guide system the most according to claim 5, wherein, the maximum field intensity in the chamber of a described H-T waveguide is little Disruptive field intensity in sulfur hexafluoride gas.
Wave guide system the most according to claim 1, wherein,
It is provided with on inwall relative with the first branch arm part in the cavity of the first main waveguides sections of a H-T waveguide One fin, this first fin is positioned at vertical to the direction of the second port, by described first branch arm part with from the first port In the plane divided equally, and/or
It is provided with on inwall relative with the second branch arm part in the cavity of the second main waveguides sections of the 2nd H-T waveguide Two fins, this second fin is positioned at vertical with from the direction of the 4th port to fifth port, by described second branch arm part In the plane divided equally.
Wave guide system the most according to claim 7, wherein, described first fin and/or the size quilt of described second fin It is arranged so that the reflection loss of described 3rd port and/or the 6th port is less than 20.8dB.
Wave guide system the most according to claim 1, wherein, in a described H-T waveguide, the first port and the second port exist From the first port to the direction of the second port position and/or described 2nd H-T waveguide in the 4th port and fifth port exist It is arranged to maximize from the 4th port to the position the direction of fifth port and is input to the from the 4th port and fifth port The combined coefficient of the microwave transmission in two H-T waveguides.
10. an electron linear accelerator, including according to accelerating for electronic line of sight described in any one in claim 1-9 The Wave guide system of device.
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Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0831598A (en) * 1994-07-20 1996-02-02 Sumitomo Electric Ind Ltd Electron linear accelerator
CN2739818Y (en) * 2004-08-16 2005-11-09 北京怡嘉兴业信息工程有限公司 Ku waveband high-gain planar antenna
CN1735995A (en) * 2003-01-03 2006-02-15 汤姆森特许公司 Transition between a rectangular waveguide and a microstrip line
CN201138681Y (en) * 2007-12-13 2008-10-22 中国电子科技集团公司第五十四研究所 Small-sized feed network for waveguide
CN101621149A (en) * 2008-07-01 2010-01-06 电子科技大学 Method for designing microwave and millimeter-wave spatial power synthesis amplifier
CN201549575U (en) * 2009-05-30 2010-08-11 四川九洲电器集团有限责任公司 Electric bridge for millimeter wave double-channel plate antenna
CN101895262A (en) * 2010-07-16 2010-11-24 中国兵器工业第二○六研究所 Millimeter waveband signal power amplification and synthesis method
CN103414001A (en) * 2013-07-18 2013-11-27 北京遥测技术研究所 Plane unequal-power-division waveguide H-T power division network
CN103635785A (en) * 2011-02-15 2014-03-12 勒克思马克斯科技公司 A fully integrated complementary metal oxide semiconductor (CMOS) fourier transform infrared (FTIR) spectrometer and raman spectrometer and method thereof
CN103811877A (en) * 2014-02-18 2014-05-21 北京理工大学 Ultra-wideband millimeter-wave linearly-polarized waveguide aperture array antenna
CN104022429A (en) * 2014-06-27 2014-09-03 中国科学院电子学研究所 High-peak-power microwave output device
CN205902187U (en) * 2016-08-04 2017-01-18 同方威视技术股份有限公司 A waveguide system and electron linear accelerator for electron linear accelerator

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0831598A (en) * 1994-07-20 1996-02-02 Sumitomo Electric Ind Ltd Electron linear accelerator
CN1735995A (en) * 2003-01-03 2006-02-15 汤姆森特许公司 Transition between a rectangular waveguide and a microstrip line
CN2739818Y (en) * 2004-08-16 2005-11-09 北京怡嘉兴业信息工程有限公司 Ku waveband high-gain planar antenna
CN201138681Y (en) * 2007-12-13 2008-10-22 中国电子科技集团公司第五十四研究所 Small-sized feed network for waveguide
CN101621149A (en) * 2008-07-01 2010-01-06 电子科技大学 Method for designing microwave and millimeter-wave spatial power synthesis amplifier
CN201549575U (en) * 2009-05-30 2010-08-11 四川九洲电器集团有限责任公司 Electric bridge for millimeter wave double-channel plate antenna
CN101895262A (en) * 2010-07-16 2010-11-24 中国兵器工业第二○六研究所 Millimeter waveband signal power amplification and synthesis method
CN103635785A (en) * 2011-02-15 2014-03-12 勒克思马克斯科技公司 A fully integrated complementary metal oxide semiconductor (CMOS) fourier transform infrared (FTIR) spectrometer and raman spectrometer and method thereof
CN103414001A (en) * 2013-07-18 2013-11-27 北京遥测技术研究所 Plane unequal-power-division waveguide H-T power division network
CN103811877A (en) * 2014-02-18 2014-05-21 北京理工大学 Ultra-wideband millimeter-wave linearly-polarized waveguide aperture array antenna
CN104022429A (en) * 2014-06-27 2014-09-03 中国科学院电子学研究所 High-peak-power microwave output device
CN205902187U (en) * 2016-08-04 2017-01-18 同方威视技术股份有限公司 A waveguide system and electron linear accelerator for electron linear accelerator

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