CN106054051B - A kind of semiconductor devices junction temperature method under the conditions of measurement surge current - Google Patents
A kind of semiconductor devices junction temperature method under the conditions of measurement surge current Download PDFInfo
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- CN106054051B CN106054051B CN201610405943.1A CN201610405943A CN106054051B CN 106054051 B CN106054051 B CN 106054051B CN 201610405943 A CN201610405943 A CN 201610405943A CN 106054051 B CN106054051 B CN 106054051B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
Abstract
Semiconductor devices junction temperature method belongs to electron device testing field under the conditions of a kind of measurement surge current.The surge current of semiconductor devices referred in the moment that working power is connected, and flowed through the peak point current of device.Due to the presence of capacitive load in device itself or circuit parasitic capacitance or circuit, the numerical value of the peak point current is far longer than the input current under device steady state operating conditions, and Transient Currents can cause transient temperature rise, will lead to the damage of semiconductor devices under serious conditions.Operating current and test electric current are combined into one by this method compared to traditional electric method.Short by the device under test application duration, the voltage pulse of amplitude incremental variations establishes dedicated school temperature diagram database, is handled using spline method the data in database；Then, the voltage at device under test both ends, current data under surge condition are measured；Finally, comparing with database lieutenant colonel's temperature curve data, junction temperature value of device under test under the conditions of surge current is obtained.
Description
Technical field
The invention belongs to electron device testing field, it is mainly used in the semiconductor devices measured under the conditions of surge current
Junction temperature, and in particular to a kind of method for testing junction temperature of VDMOS device under the conditions of surge current.
Background technique
The surge current of semiconductor devices referred in the moment that working power is connected, and flowed through the peak point current of device.Due to
The presence of capacitive load in device itself or circuit parasitic capacitance or circuit, the numerical value of the peak point current are far longer than device stable state
Input current under working condition, Transient Currents can cause transient temperature rise, the damage of semiconductor devices caused under serious conditions.
Junction temperature of the accurate measurement semiconductor devices when surge current phenomenon occurs, the design for semiconductor devices, practical application electricity
The design and semiconductor reliability and the theoretical research work of failure analysis on road etc., are of great significance.
Referring to standards such as existing national military standard 128A-97/3103, MIL-STD-750E/3101.4, semiconductor devices at present
The measurement method of junction temperature mostly uses electric method.Electric method uses the measuring device with switching device, utilizes operating current
After increasing device junction temperature, measurement electric current is switched to complete the measurement of junction temperature.But it is cut since conventional method carries out switch
It changes, required time is even greater than surge current pulsewidth, therefore traditional electric method and is not suitable for.
Summary of the invention
The present invention is directed to propose a kind of method of real-time measurement semiconductor devices junction temperature under the conditions of surge current.This method
Compared to traditional electric method, operating current and test electric current are combined into one.Compared to traditional electric method, this method is by work
Make electric current and test electric current is combined into one.Firstly, the device under test application duration is short, the voltage arteries and veins of amplitude incremental variations
Punching, establishes dedicated school temperature diagram database, uses；Then, voltage, the electric current number at device under test both ends under surge condition are measured
According to；Finally, comparing with database lieutenant colonel's temperature curve data, junction temperature value of device under test under the conditions of surge current is obtained.
The technical solution adopted by the invention is as follows:
Device under test is placed in heating device, which can be incubator but be not limited to incubator, in this specification
By taking incubator as an example, by being configured to incubator, device is made to obtain the environment of assigned temperature, after enough time, i.e., it is believed that
It is identical as Temperature of Warm Case to survey device temperature.By short to device input duration, the incremental voltage pulse of amplitude avoids voltage
The variations injunction temperature of device under test caused by pulse has an impact measurement result.So that device under test is worked using pulse, measures
The voltage-current relation at device both ends under working condition, it is final to establish the voltage-to-current-junction temperature school temperature curve for being directed to the device
Database.
On the basis of obtaining school temperature diagram database, make its normal work, measurement device to device access operating voltage
Under on-off transient state, when surge current phenomenon occurs, the voltage at measurement device both ends, current data.By with school Wen Qu
Data in line database are compared, the final junction temperature data for obtaining device under the conditions of surge current.
Herein it should be noted that school temperature diagram database is rendered as the form of curved surface, due to the correspondence known electric in database
The quantity of piezo-electric stream-temperature point is known, therefore curved surface is not spatially totally continuous, but discrete.
For similar problem, in previous case, following two solution is mainly taken:
1, using Mathematical Fitting tool by surface fitting, obtain the expression equation of curved surface, obtain voltage, current data with
Afterwards, the equation is substituted into, calculates and obtains non trivial solution, as temperature.
2, during establishing curved surface, measure enough points, the as far as possible spacing between reduction consecutive points；Then survey
After measuring voltage-to-current numerical value, searching and the immediate point of voltage-to-current point are concentrated in the point established before, and take this
Point temperature is the problem of measurement obtains.
The shortcomings that the first solution, is that current approximating method is very poor for complex-curved fitting effect, intends
The relatively true curved surface of curved surface obtained is closed, the goodness of fit is not high, therefore the temperature value accuracy obtained is very poor；Second
The shortcomings that solution, is it is obvious that the quantity of point of accuracy to measurement of junction temperature obtained is directly proportional, therefore works as and need to obtain
When the junction temperature of degree of precision, need to measure a large amount of point as data, the promotion to workload be it is self-evident, together
When the solution under the junction temperature that obtains be a kind of approximate solution, accuracy cannot be guaranteed.
Improved spline method is taken in the present invention, can get weight vectors by calculating, the vector is opposite
In database, numerical quantities are substantially reduced.Under the conditions of embedded system lesser for memory space, this method can also be obtained very well
Ground utilizes.The quantity of measurement point of the interpolation method for requiring substantially reduces simultaneously, saves workload and time of measuring.
The device for realizing junction temperature measurement method of the semiconductor devices in surge current phenomenon in the present invention includes to be measured half
Conductor device 1, incubator 2, voltage source 3, impulse generator 4, data acquisition instrument 5, device clamp 6 etc..Wherein, data collecting instrument
Device 5 is used to measure device under test both end voltage and flows through the electric current of device under test.
It is a feature of the present invention that this method is further comprising the steps of:
Semiconductor devices 1 is connected by step 1 with impulse generator 4, by 5 phase of semiconductor devices 1 and data acquisition instrument
Even, and semiconductor devices 1 is put into incubator 2, semiconductor devices 1 is heated using incubator 2.
Step 2, when 1 temperature of semiconductor devices is stabilized to temperature set by incubator 2, using impulse generator 4 to half
Conductor device 1 applies the short pulse of voltage value incremental variations, herein it should be noted that pulse width can be according to national military standard 128A-1997
In defined short pulse, measure the voltage at semiconductor devices both ends, current data thereafter by data acquisition instrument 5.Pulse
Voltage value obtains maximum value according to maximum selection rule specified in device handbook, and step 3 repeats step 1 and step 2, obtains not
Voltage-to-current data under synthermal.Herein it should be noted that temperature maximum is defined as with the device handbook that device production quotient provides
Standard, while the stepped intervals of temperature are smaller, the precision finally obtained is higher.Then the data obtained is summarized, is handled, formation is directed to
The school temperature diagram database of semiconductor devices 1.
Step 4 does interpolation method processing to the school temperature diagram database measured, and its step are as follows:
1) to the data measured according to following rule compositor: being preferentially ranked up according to current value, when current value is identical
When, it is sorted according to voltage value.When electric current, voltage value are all identical, then the quantity of statistics electric current, the identical point of voltage value will
Temperature value is averaged, and obtains new current-voltage-temperature data points, after being included in the old point deletion of calculating, by new data point
In insertion database and sort.Herein it should be noted that such as without sequence handle, the junction temperature precision finally obtained will significantly under
Drop.Voltage-to-current-temperature data after eventually passing through sequence is stored in the column vector of n × 1 respectively, and wherein n is that treated for sequence
Data point obtains quantity.Column voltage vector is denoted as Vn, electric current column vector is denoted as In, temperature column vector is denoted as Hn。
2) by VnExpand the voltage matrix D for being n × nV, the data and V of each columnnIt is identical, equally electric current is expanded as n × n
Current matrix DI, the data and I of each columnnIt is identical.
3) matrix D is obtained by following calculate:
Oeprator " .^ " meaning in formula is to do power operation processing to each element in matrix respectively,With
Respectively represent DVAnd DITransposed matrix, symbol " dia1" meaning is that the diagonal entry of matrix is changed to 1.
4) it calculates according to the following formula and obtains matrix G:
G=dia0((D.^2).*(ln.(D)-1))
Oeprator " .^ " meaning in formula is to do power operation processing to each element in matrix respectively, and " ln. " contains
Justice to take natural logrithm to each element in matrix respectively, " .* " meaning be each element of two matrixes is individually multiplied and
Non-generic matrix multiplication, symbol " dia0" meaning is that the diagonal entry of matrix is changed to 1.
5) weight vectors w is calculated according to the following formula:
H in formulanIt is identical as the regulation in the step 1 in step 4, it is temperature column vector, andRepresent HnTransposition.
Semiconductor devices 1 is connected by step 4 using device clamp 6 and conducting wire with voltage source 3 and data acquisition instrument 5,
So that semiconductor devices 1 is worked using voltage source 3, while measuring the voltage electricity at 1 both ends of semiconductor devices using data acquisition instrument 5
Flow data.Remember that the voltage measured is V, electric current I, and establishes the matrix V of n × 1mAnd Im, wherein VmIn each element be V, Im
In each element be I, carry out according to the following formula calculate obtain vector DE:
DE=((Vm-Vn).^2+(Im-In).^2).^(1/2)
Oeprator " .^ " meaning in formula is to be power operation processing, V to each element in matrix respectivelynAnd InFor
Column voltage vector and electric current column vector in step 3 in step 1.
Step 5 is calculated by the following formula acquisition junction temperature:
T=w*ins0((DE.i^2).*(ln.(DE)-1))
W is the weight vectors in step 3 step 5 in formula, and oeprator " .^ " meaning is respectively to each of matrix
Element does power operation processing, and " ln. " meaning is to take natural logrithm to each element in matrix respectively, " ins0" meaning be work as
When DE point value is 0, the calculated result value which substitutes into formula (DE.^2) .* (ln. (DE) -1) is 0.
Feature of the present invention:
Step 2, the pulse voltage signal driving semiconductor devices 1 being incremented by using voltage value works rather than the electricity of routine
Source, to measure semiconductor devices both end voltage-current relationship at this temperature；
The width of step 2, the short pulse applied using impulse generator 3 should be according to the rule in national military standard 128A-1997
It is fixed, recommend 100us herein；
Step 3 repeats step 1 and step 2, obtains the corresponding relation data of voltage-to-current under different temperatures, finally
The school temperature curve library for being directed to semiconductor devices 1 is established, while herein it should be noted that finally obtaining if not being ranked up processing to data
Junction temperature precision by sharp fall；
Step 4: five, six, using school temperature curve library, judged under the conditions of surge current according to the data that real-time measurement arrives
Semiconductor devices 1 junction temperature.
Detailed description of the invention
Fig. 1 is schematic device used in step 1 and step 2, and in figure, 1 is semiconductor devices, and 2 be incubator, and 4 are
Impulse generator, 5 be data acquisition instrument, and 6 be device clamp.
Fig. 2 is schematic device used in step 4, and in figure, 1 is semiconductor devices, and 3 be voltage source, and 5 adopt for data
Collect instrument, 6 be device clamp.
Fig. 3 is surface chart of high-ranking officers' temperature diagram database under 3-D walls and floor.
Fig. 4 is the variations injunction temperature figure measured in specific embodiment.
Fig. 5 is feature of present invention flow chart.
Specific embodiment
With reference to the accompanying drawing and by taking certain diode semiconductor device as an example but not limited to this specific embodiment of example is to this
Invention is described in detail.
Test device according to the present invention is as shown in Figure 1.
Semiconductor devices 1 is connected by step 1 with impulse generator 4, by 5 phase of semiconductor devices 1 and data acquisition instrument
Even, and semiconductor devices 1 is put into incubator 2, set temperature is 30 DEG C, is heated using incubator 2 to semiconductor devices 1.
Step 2 passes through pulse after the time heated using incubator 2 to semiconductor devices 1 reaching expeced time
Generator 4 applies the short pulse of voltage value incremental variations to semiconductor devices 1, herein it should be noted that pulse width can be according to army, state
The regulation in 128A-1997 is marked, recommends position 100us herein, the electricity at 1 both ends of semiconductor devices is measured using data acquisition instrument 5
Pressure, electric current, and record related data.
Step 3 repeats step 1 and step 2, and temperature is incremented by 5 DEG C, until temperature reaches 120 DEG C since 40 DEG C every time
Until, voltage is incremented by since 0, and stepping length is 10mV, until 1V.Herein it should be noted that temperature maximum is with device production
Subject to the device handbook regulation that quotient provides.In this example, this temperature maximum is 110 DEG C, voltage max 1V.Measurement finishes
After conclude, handle data, establish be directed to semiconductor devices 1 school temperature diagram database.Database is done into interpolation method according to following
Processing:
1, to the data measured according to following rule compositor: being preferentially ranked up according to current value, when current value is identical
When, it is sorted according to voltage value.When electric current, voltage value are all identical, then the quantity of statistics electric current, the identical point of voltage value will
Temperature value is averaged, and obtains new current-voltage-temperature data points, after being included in the old point deletion of calculating, by new data point
In insertion database and sort.Herein it should be noted that such as without sequence handle, the junction temperature precision finally obtained will significantly under
Drop.Voltage-to-current-temperature data after eventually passing through sequence is stored in the column vector of n × 1 respectively, and wherein n is that treated for sequence
Data point obtains quantity.Column voltage vector is denoted as Vn, electric current column vector is denoted as In, temperature column vector is denoted as Hn。
2, by VnExpand the voltage matrix D for being n × nV, the data and V of each columnnIt is identical, equally electric current is expanded as n × n
Current matrix DI, the data and I of each columnnIt is identical.
3, by calculating acquisition matrix D as follows:
Oeprator " .^ " meaning in formula is to do power operation processing to each element in matrix respectively,With
Respectively represent DVAnd DITransposed matrix, symbol " dia1" meaning is that the diagonal entry of matrix is changed to 1.
4, it calculates obtain matrix G according to the following formula:
G=dia0((D.^2).*(ln.(D)-1))
Oeprator " .^ " meaning in formula is to do power operation processing to each element in matrix respectively, and " ln. " contains
Justice to take natural logrithm to each element in matrix respectively, " .* " meaning be each element of two matrixes is individually multiplied and
Non-generic matrix multiplication, symbol " dia0" meaning is that the diagonal entry of matrix is changed to 1.
5, weight vectors W is calculated according to the following formula:
H in formulanIt is identical as the regulation in the step 1 in step 4, it is temperature column vector, andRepresent HnTransposition.
Semiconductor devices 1 is connected by step 4 with voltage source 3, and applying voltage to semiconductor devices 1 makes its work, simultaneously
1 both end voltage of semiconductor devices, current data are measured using data acquisition instrument 5.Remember that the voltage that measures is V, electric current I,
And establish the matrix V of n × 1mAnd Im, wherein VmIn each element be V, ImIn each element be I, carry out according to the following formula
It calculates and obtains vector DE:
DE=((Vm-Vn).^2+(Im-In).^2).^(1/2)
Oeprator " ^ " meaning in formula is to be power operation processing, V to each element in matrix respectivelynAnd InFor
Column voltage vector and electric current column vector in step 3 in step 1.
Step 5 is calculated by the following formula acquisition junction temperature:
T=W*ins0((DE.^2).*(ln.(DE)-1))
W is the weight vectors in step 3 step 5 in formula, and oeprator " ^ " meaning is respectively to every in matrix
A element does power operation processing, and " ln. " meaning is to take natural logrithm to each element in matrix respectively, " ins0" meaning be
When DE point value is 0, the calculated result value which substitutes into formula (DE.^2) .* (ln. (DE) -1) is 0.
Finally, it should be noted that above embodiments are only to illustrate the present invention and not limit technology described in the invention
Scheme；Therefore, although this specification is referring to above-mentioned each embodiment, the present invention has been described in detail, this
Field it is to be appreciated by one skilled in the art that still can modify to the present invention or equivalent replacement；And all do not depart from hair
The technical solution and its improvement of bright spirit and scope, are intended to be within the scope of the claims of the invention.
Claims (1)
1. a kind of junction temperature measurement method of semiconductor devices under the conditions of surge current, which comprises the following steps:
Semiconductor devices (1) is connected, by semiconductor devices (1) and data acquisition instrument by step 1 with impulse generator (4)
(5) it is connected, and semiconductor devices (1) is put into incubator (2), semiconductor devices (1) is heated using incubator (2)；
Step 2 is given when semiconductor devices (1) temperature is stabilized to temperature set by incubator (2) using impulse generator (4)
Semiconductor devices (1) applies the incremental short pulse of voltage, and the electricity at semiconductor devices both ends is measured by data acquisition instrument (5)
Pressure, current data；
Step 3 repeats step 1 and step 2, obtains the voltage-to-current data under different temperatures, and the data obtained is summarized,
Processing forms the school temperature diagram database for being directed to semiconductor devices (1), then school temperature diagram database is handled as follows:
1) to the data measured according to following rule compositor: preferentially it is ranked up according to current value, when current value is identical, root
It sorts according to voltage value, when electric current, voltage value are all identical, the quantity of statistics electric current, the identical point of voltage value, then by temperature value
It is averaged, as in new point insertion database, voltage-to-current-temperature data after eventually passing through sequence is stored in n × 1 respectively
Column vector, wherein n is the quantity of sequence treated data point, and column voltage vector is denoted as Vn, electric current column vector is denoted as In, temperature
Column vector is denoted as Hn；
2) by VnExpand the voltage matrix D for being n × nV, the data and V of each columnnIt is identical, electric current is equally expanded to the electricity for n × n
Flow matrix DI, the data and I of each columnnIt is identical；
3) matrix D is obtained by following calculate:
Oeprator " .^ " meaning in formula is to do power operation processing to each element in matrix respectively,WithRespectively
Represent DVAnd DITransposed matrix, symbol " dia1" meaning is that the diagonal entry of matrix is changed to 1；
4) it calculates according to the following formula and obtains matrix G:
G=dia0((D.^2).*(ln.(D)-1))
Oeprator " .^ " meaning in formula is to do power operation processing to each element in matrix respectively, and " ln. " meaning is
Natural logrithm is taken to each element in matrix respectively, " .* " meaning is that each element of two matrixes is individually multiplied rather than general
Logical matrix multiplication, symbol " dia0" meaning is that the diagonal entry of matrix is changed to 1；
5) weight vectors W is calculated according to the following formula:
H in formulanIt is identical as the regulation in the step 1 in step 3, it is temperature column vector, andRepresent HnTransposition；
Step 4 makes semiconductor devices (1) to work, while measuring semiconductor using data acquisition instrument (5) using voltage source (3)
The voltage and current data at device (1) both ends remember that the voltage measured is V, electric current I, and establish the matrix V of n × 1mAnd Im, wherein
VmIn each element be V, ImIn each element be I, carry out according to the following formula calculate obtain vector DE:
DE=((Vm-Vn).^2+(Im-In).^2).^(1/2)
Oeprator " .^ " meaning in formula is to be power operation processing, V to each element in matrix respectivelynAnd InFor step
Column voltage vector and electric current column vector in three in step 1；
Step 5 is calculated by the following formula acquisition junction temperature:
T=W*ins0((DE.^2).*(ln.(DE)-1))
W is the weight vectors in step 3 step 5 in formula, and oeprator " .^ " meaning is respectively to each element in matrix
Power operation processing is done, " ln. " meaning is to take natural logrithm to each element in matrix respectively, " ins0" meaning be as DE
When point value is 0, the calculated result value which substitutes into formula (DE.^2) .* (ln. (DE) -1) is 0.
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| CN110907791A (en) * | 2019-11-27 | 2020-03-24 | 西安交通大学 | Power cycle method for accelerating bipolar degradation of SiC MOSFET body diode |
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| SU1049755A1 (en) * | 1979-11-13 | 1983-10-23 | Таллинский Политехнический Институт | Process for measuring thermal spike of p-n junction |
| JPH09127184A (en) * | 1995-11-06 | 1997-05-16 | Matsushita Electron Corp | Thermal characteristic measuring method and measuring device for semiconductor element |
| CN103822731B (en) * | 2014-03-06 | 2016-08-24 | 北京工业大学 | A kind of method of testing of VDMOS device junction temperature |
| CN103954899B (en) * | 2014-04-09 | 2017-06-06 | 北京工业大学 | A kind of method of real-time measuring diode transient temperature rise |
| CN104036144A (en) * | 2014-06-26 | 2014-09-10 | 厦门大学 | Pulsed LED voltage, current and junction temperature feature modeling method |
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