CN106044855B - One kind prepares individual layer MoS2Method - Google Patents
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- CN106044855B CN106044855B CN201610357102.8A CN201610357102A CN106044855B CN 106044855 B CN106044855 B CN 106044855B CN 201610357102 A CN201610357102 A CN 201610357102A CN 106044855 B CN106044855 B CN 106044855B
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G39/00—Compounds of molybdenum
- C01G39/06—Sulfides
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- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
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Abstract
The present invention discloses one kind and prepares individual layer MoS2New method, improve individual layer MoS particular by catalysis method2Size and the repeatability of experiment.The present invention is using carbon-contained catalyst solution to SiO2/ Si substrates are handled, and individual layer MoS is then prepared using CVD method2Sample.Analysis is tested to the optical property and surface topography of sample using metallographic microscope, Raman spectrometer, AFM and ESEM etc..The inventive method prepares individual layer MoS by catalysis method2, by individual layer MoS2Size brought up to tens microns, quality very well, and improves the repeatability of experiment.The inventive method compares prior art, has not only prepared large scale individual layer MoS2, and the repeatability of experiment is improved, experimental implementation is got up simply, and feasibility is strong, short preparation period, low cost and other advantages.
Description
Technical field
The invention belongs to field of material technology, and in particular to one kind prepares individual layer MoS2Method.
Background technology
MoS2As the material of a species graphene, the Some features with graphene.The MoS of individual layer2Thickness is about
0.65nm and have be direct band-gap semicondictor material, band gap is about 1.8eV.MoS2With electricity, optics and catalyst property etc.
Feature, can be supplemented, such as one of grapheme material:Photoelectronics and energy storage.Due to individual layer MoS2It is atomic layer
The semi-conducting material of thickness, therefore the sensitiveness of environment to external world is very strong.By studying individual layer MoS2Physical property, to next
For electronic device, optics, the development of biology sensor has very important significance.
Individual layer MoS2It is the semi-conducting material of direct band gap, but present preparation means can't ensure to prepare greatly
The individual layer MoS of size2, and repeatability is not also high.
The content of the invention
Individual layer MoS is prepared it is an object of the invention to provide one kind2Method, this method on the basis of CVD using oxidation
Graphene quantum dot, graphene quantum dot and CNT are as the catalyst to prepare large-sized individual layer molybdenum disulfide
MoS2, and improve and prepare individual layer MoS2Repeatability.
The inventive method is：
Step (1), to SiO2(280~300nm)/Si substrates are cleaned：Using with strong oxidizing property compound solution
Substrate surface organic molecule that may be present is removed, is specifically：
1.1 by SiO2(280~300nm)/Si pieces cut into 1~2cm2Square fritter is used as substrate；
Above-mentioned substrate ultrasonic wave is cleaned 10 minutes with deionized water under 1.2 normal temperature；
Above-mentioned substrate ultrasonic wave is cleaned 10 minutes with absolute ethyl alcohol under 1.3 normal temperature；
Above-mentioned substrate ultrasonic wave is cleaned 10 minutes with deionized water under 1.4 normal temperature；
Above-mentioned substrate ultrasonic wave is cleaned 10 minutes with strong oxidizing property compound solution under 1.5 normal temperature；
Above-mentioned substrate ultrasonic wave is cleaned 10 minutes with deionized water under 1.6 normal temperature, finally dried up standby；
Described strong oxidizing property compound can be hydrogen peroxide；Preferably mass fraction is that 20~30% hydrogen peroxide are molten
Liquid；
Step (2), using carbon-contained catalyst to cleaning in step (1) after SiO2(280~300nm)/Si liner oxidations layer
(the i.e. SiO of substrate2Layer) pre-processed, carbon-contained catalyst thickness degree is 1~2nm, is specifically following several different disposals；
Graphene oxide quantum dot solution is uniformly spin-coated on SiO by 2.12(280~300nm)/Si liner oxidation layer surfaces；
2.2 by SiO2(280~300nm)/Si substrates are infiltrated in graphene oxide quantum dot solution, are taken using czochralski method
Go out substrate, and dried up with argon gas rifle；
Graphene quantum dot solution is uniformly spin-coated on SiO by 2.32(280~300nm)/Si liner oxidation layer surfaces；
Carbon nano-tube solution is uniformly spin-coated on SiO by 2.42(280~300nm)/Si liner oxidation layer surfaces；
Described uniform painting method can be using sol evenning machine by graphene oxide quantum dot, graphene quantum dot and
Three kinds of solution of CNT distinguish uniform spin coating SiO2(280~300nm)/Si substrate surfaces, spin coating machine speed is set to low speed
1000~2000 revs/min, 7000~8000 revs/min at a high speed, spin-coating time is 30~40 seconds；
Step (3), individual layer MoS is prepared using the method for chemical vapor deposition2Sample, specifically utilizes dual temperature area tubular type
Heating furnace is to sulphur source (sublimed sulfur 100mg) and molybdenum source (MoO32mg) heated, the distance between two sources 25cm, for protecting
Demonstrate,prove S and MoO3Reaction.By SiO2(280~300nm)/Si substrates have the side (the i.e. SiO of substrate of oxide layer2Aspect) face
Lower left-hand thread is in dress MoO3On silica ware.In growth course, the control condition of warm area 2 is to be warming up to 20 DEG C/min speed
680 DEG C, and 20min is incubated, normal temperature quickly then is down in 20min, sample is obtained.When warm area 2 reaches 680 DEG C, temperature
The temperature in area 1 is about 180 DEG C, and the temperature can ensure that sublimed sulfur can be evaporated.
Excitation wavelength can be used to measure individual layer for 532nm Raman spectrometer for the product that the test above method is prepared
MoS2Raman spectrum and PL spectrum have also carried out SEM tests and AFM tests.
The inventive method prepares individual layer MoS by catalysis method2(in substrate surface spin coating last layer graphene oxide quantum
One kind in point, three kinds of solution of graphene quantum dot and CNT).By individual layer MoS2Size to have brought up to tens micro-
Rice, quality very well, and improves the repeatability of experiment.Have been reported that before this, can be with by the method for aumospheric pressure cvd
Improve individual layer MoS2Size.But this technique is unstable, repeatability is poor.The inventive method is compared than not only making
It is standby gone out large scale individual layer MoS2, and the repeatability of experiment is improved, experimental implementation is got up simply, and feasibility is strong, prepares week
Phase is short, low cost and other advantages.
Brief description of the drawings
Fig. 1 is chemical gaseous phase depositing process growth individual layer MoS2Equipment schematic diagram；
The individual layer MoS that Fig. 2 is prepared when being and not doing any processing to substrate2Optical microscope picture, wherein (a) for rule
Then triangular shaped individual layer MoS2, figure (b) is several individual layer MoS of different shapes2；
The individual layer MoS that Fig. 3 is prepared when being and not doing any processing to substrate2Raman spectrum；
The individual layer MoS that Fig. 4 is prepared when being and not doing any processing to substrate2PL spectrum；
The individual layer MoS that Fig. 5 graphene oxide quantum dot solution catalyzings that have been substrate surface spin coatings are prepared2Optical microphotograph
Mirror picture；Wherein (a) is large-sized individual layer MoS2, (b) is the individual layer MoS in sheet distribution2；
The individual layer MoS that Fig. 6 graphene oxide quantum dot solution catalyzings that have been substrate surface spin coatings are prepared2SEM pictures；
The individual layer MoS that Fig. 7 graphene oxide quantum dot solution catalyzings that have been substrate surface spin coatings are prepared2Raman light
Spectrum；
The individual layer MoS that Fig. 8 graphene oxide quantum dot solution catalyzings that have been substrate surface spin coatings are prepared2PL spectrum；
Fig. 9 is that individual layer MoS is prepared in substrate infiltration catalysis after the processing of graphene oxide quantum dot solution2Optical microphotograph
Mirror picture, wherein figure (a) is the MoS grown around graphene oxide quantum dot2, figure (b) is the individual layer MoS of various shapes2；
Figure 10 is that individual layer MoS is prepared in substrate infiltration catalysis after the processing of graphene oxide quantum dot solution2SEM figure
Piece；
Figure 11 is that individual layer MoS is prepared in substrate infiltration catalysis after the processing of graphene oxide quantum dot solution2AFM figure
Piece；
Figure 12 is that individual layer MoS is prepared in substrate infiltration catalysis after the processing of graphene oxide quantum dot solution2Raman light
Spectrum；
Figure 13 is that substrate infiltration is catalyzed the individual layer MoS prepared after the processing of graphene oxide quantum dot solution2PL light
Spectrum；
Individual layer MoS at the catalysis preparation of Figure 14 graphene quantum dots that have been substrate surface spin coating2Optical microscope picture,
Wherein figure (a) and figure (b) are the individual layer MoS in large stretch of distribution2；
Individual layer MoS at Figure 15 graphene quantum dot solution catalyzing preparations that have been substrate surface spin coating2Raman spectrum；
Individual layer MoS at Figure 16 graphene quantum dot solution catalyzing preparations that have been substrate surface spin coating2PL spectrum.
Embodiment
It is for further analysis to the present invention with reference to specific embodiments and the drawings.
The chemical vapour deposition technique that following examples are used, is to sulphur source (distillation using dual temperature area tubular heater
Sulphur 100mg) and molybdenum source (MoO32mg) heated, two sources are directly apart from 25cm, for ensureing S and MoO3Reaction.Will
SiO2/ Si substrates have the side (the i.e. SiO of substrate of oxide layer2Aspect) down left-hand thread dress MoO3On quartz boat.In growth
During, the control condition of warm area 2 is incubated 20min to be warming up to 680 DEG C with 20 DEG C/min speed, then in 20min
It is interior to be quickly down to normal temperature, obtain sample.
Comparative example 1.
Step (1) is by SiO2(300nm)/Si pieces cut into 1cm2Square fritter is used as substrate.
Substrate ultrasonic wave obtained by step (1) is cleaned 10 minutes with deionized water under step (2) normal temperature.
AR is used under step (3) normal temperature, substrate ultrasonic wave obtained by step (2) is cleaned 10 by 99.7% ethanol solution
Minute.
Substrate ultrasonic wave obtained by step (3) is cleaned 10 minutes with deionized water under step (4) normal temperature.
Substrate ultrasonic wave obtained by step (4) is cleaned 10 points for 30% hydrogen peroxide with mass fraction under step (5) normal temperature
Clock.
Substrate ultrasonic wave obtained by step (5) is cleaned 10 minutes with deionized water under step (6) normal temperature.
Substrate obtained by step (7) drying steps (6), then using chemical vapour deposition technique in Grown individual layer
MoS2, obtain final sample.
Sample obtained by step (8) testing procedures (7), individual layer is measured using excitation wavelength for 532nm Raman spectrometer
MoS2Raman spectrum and PL spectrum tests.
It is as shown in Figure 1 chemical gaseous phase depositing process growth individual layer MoS2Equipment schematic diagram, be not to substrate shown in Fig. 2
It is the individual layer MoS prepared during any processing2Optical microscope picture, size is somewhat small (1~2 μm).Shown in Fig. 3 and Fig. 4
The individual layer MoS prepared when being and not doing any processing to substrate2Raman spectrum and PL spectrum, the individual layer quality prepared
MoS2Compare high.
Embodiment 1.
Step (1) is by SiO2(300nm)/Si pieces cut into 1cm2Square fritter is used as substrate.
Substrate ultrasonic wave obtained by step (1) is cleaned 10 minutes with deionized water under step (2) normal temperature.
AR is used under step (3) normal temperature, substrate ultrasonic wave obtained by step (2) is cleaned 10 by 99.7% ethanol solution
Minute.
Substrate ultrasonic wave obtained by step (3) is cleaned 10 minutes with deionized water under step (4) normal temperature.
Substrate ultrasonic wave obtained by step (4) is cleaned 10 points for 30% hydrogen peroxide with mass fraction under step (5) normal temperature
Clock.
Substrate ultrasonic wave obtained by step (5) is cleaned 10 minutes with deionized water under step (6) normal temperature.
Substrate obtained by step (7) drying steps (6), is then set to 2000 revs/min of low speed by spin coating machine speed, high
8000 revs/min of speed, controls spin-coating time to be low speed 10 seconds, 20 seconds at a high speed, 30 μ L graphene oxide quantum dot solution are uniform
Substrate surface is spin-coated on, spin coating thickness is 1~2nm.
Step (8) is put into substrate obtained by step (7) in chemical vapor depsotition equipment, utilizes chemical gaseous phase depositing process
To prepare individual layer MoS2。
Sample obtained by step (9) testing procedures (8), individual layer is measured using excitation wavelength for 532nm Raman spectrometer
MoS2Raman spectrum and PL spectrum, also carry out SEM tests.
The individual layer MoS that the graphene oxide quantum dot solution catalyzing that has been substrate surface spin coating as shown in Figure 5 is prepared2Light
Microscope photograph is learned, size there are 20-30 microns, significantly greater relative to Fig. 2 sizes.It is substrate surface spin coating shown in Fig. 6
The individual layer MoS that graphene oxide quantum dot solution catalyzing is prepared2SEM pictures, it can be found that individual layer MoS2In sheet distribution.
The individual layer MoS that Fig. 7 and Fig. 8 graphene oxide quantum dot solution catalyzing that has been substrate surface spin coating respectively are prepared2Raman light
Spectrum and PL spectrum, the analysis found that these individual layers MoS2Be of high quality.
Using the comparison of two kinds of different preparation methods (direct method and catalysis method), 1 is specifically shown in Table, it has been found that substrate is entered
Large scale and high-quality individual layer MoS can be grown after row processing2, and effectively solve in chemical vapor deposition
Repeated difficult the problem of.Individual layer MoS after handling substrate2Growth be a heterogeneous nucleation process, compared to homogeneous
Nucleation mode, which effectively reduces nucleating potential barrier during forming core by nucleating agent so that the resistance of forming core subtracts
It is few, allow forming core to become easier to.
Table 1
Embodiment 2.
Step (1) is by SiO2(300nm)/Si pieces cut into 1cm2Square fritter is used as substrate.
Substrate ultrasonic wave obtained by step (1) is cleaned 10 minutes with deionized water under step (2) normal temperature.
AR is used under step (3) normal temperature, substrate ultrasonic wave obtained by step (2) is cleaned 10 by 99.7% ethanol solution
Minute.
Substrate ultrasonic wave obtained by step (3) is cleaned 10 minutes with deionized water under step (4) normal temperature.
Substrate ultrasonic wave obtained by step (4) is cleaned 10 points for 30% hydrogen peroxide with mass fraction under step (5) normal temperature
Clock.
Substrate ultrasonic wave obtained by step (5) is cleaned 10 minutes with deionized water under step (6) normal temperature.
Substrate obtained by step (7) drying steps (6), then sinks to the bottom infiltration into graphene oxide quantum dot solution by this,
Then substrate is taken out with the mode of czochralski method, and is dried up with argon gas rifle.
Step (8) is put into substrate obtained by step (7) in chemical vapor depsotition equipment, utilizes chemical gaseous phase depositing process
To prepare individual layer MoS2。
Sample obtained by step (9) testing procedures (8), individual layer is measured using excitation wavelength for 532nm Raman spectrometer
MoS2Raman spectrum and PL spectrum, also carry out SEM and AFM test.
It is that substrate infiltration is catalyzed the individual layer MoS prepared after graphene oxide quantum dot processing as shown in Figure 92Optics
Microscope photograph, size is also very big.It is that substrate infiltration is catalyzed preparation after the processing of graphene oxide quantum dot solution shown in Figure 10
The individual layer MoS gone out2SEM pictures, it has been found that have many individual layer MoS2Grown around graphene oxide quantum dot,
This be due to us infiltration allow in time graphene oxide quantum dot substrate surface be distributed it is uneven caused by.Figure
11 be that substrate infiltration is catalyzed the individual layer MoS prepared after the processing of graphene oxide quantum dot solution2AFM pictures, some are big
The MoS of size dendritic crystalline2It also form.Figure 12 and Figure 13 are that respectively substrate infiltration is located in graphene oxide quantum dot solution
The individual layer MoS prepared is catalyzed after reason2Raman spectrum and PL spectrum, this method prepares individual layer MoS2Quality it is also higher.
Embodiment 4.
Step (1) is by SiO2(300nm)/Si pieces cut into 1cm2Square fritter is used as substrate.
Substrate ultrasonic wave obtained by step (1) is cleaned 10 minutes with deionized water under step (2) normal temperature.
AR is used under step (3) normal temperature, substrate ultrasonic wave obtained by step (2) is cleaned 10 by 99.7% ethanol solution
Minute.
Substrate ultrasonic wave obtained by step (3) is cleaned 10 minutes with deionized water under step (4) normal temperature.
Substrate ultrasonic wave obtained by step (4) is cleaned 10 points for 30% hydrogen peroxide with mass fraction under step (5) normal temperature
Clock.
Substrate ultrasonic wave obtained by step (5) is cleaned 10 minutes with deionized water under step (6) normal temperature.
Substrate obtained by step (7) drying steps (6), is then set to 1000 revs/min of low speed by spin coating machine speed, high
7000 revs/min of speed, controls spin-coating time to be low speed 10 seconds, and 20 seconds at a high speed, graphene quantum dot solution is uniformly spin-coated on into lining
Basal surface.
Step (8) is put into substrate obtained by step (7) in chemical vapor depsotition equipment, utilizes chemical gaseous phase depositing process
To prepare individual layer MoS2。
Sample obtained by step (9) testing procedures (8), individual layer is measured using excitation wavelength for 532nm Raman spectrometer
MoS2Raman spectrum and PL spectrum, also carry out SEM tests.
Being substrate surface spin coating as shown in figure 14, graphene quantum dot solution catalyzing prepares individual layer MoS2Optics show
Micro mirror picture, size is big a bit (5-10 μm).Figure 15 and Figure 16 graphene quantum dot solution catalyzing that has been substrate surface spin coating
The individual layer MoS prepared2Raman spectrum and PL spectrum, the analysis found that these individual layers MoS2Be of high quality.
Embodiment 5.
Step (1) is by SiO2(300nm)/Si pieces cut into 2cm2Square fritter is used as substrate.
Substrate ultrasonic wave obtained by step (1) is cleaned 10 minutes with deionized water under step (2) normal temperature.
AR is used under step (3) normal temperature, substrate ultrasonic wave obtained by step (2) is cleaned 10 by 99.7% ethanol solution
Minute.
Substrate ultrasonic wave obtained by step (3) is cleaned 10 minutes with deionized water under step (4) normal temperature.
Substrate ultrasonic wave obtained by step (4) is cleaned 10 points for 30% hydrogen peroxide with mass fraction under step (5) normal temperature
Clock.
Substrate ultrasonic wave obtained by step (5) is cleaned 10 minutes with deionized water under step (6) normal temperature.
Substrate obtained by step (7) drying steps (6), is then set to 1000 revs/min of low speed by spin coating machine speed, high
7000 revs/min of speed, controls spin-coating time to be low speed 20 seconds, and 20 seconds at a high speed, 30 μ L carbon nano-tube solutions are uniformly spin-coated on into lining
Basal surface, the thickness of spin coating is 1~2nm.
Step (8) is put into substrate obtained by step (7) in chemical vapor depsotition equipment, utilizes chemical gaseous phase depositing process
To prepare individual layer MoS2。
Sample obtained by step (9) testing procedures (8), individual layer is measured using excitation wavelength for 532nm Raman spectrometer
MoS2Raman spectrum and PL spectrum, also carry out SEM tests.
The individual layer MoS that the embodiment is prepared2Size is bigger than untreated gained, and repetitive rate is also improved a lot.
Claims (8)
1. one kind prepares individual layer MoS2Method, this method mainly includes the following steps that：
Step (1), to SiO2/ Si substrates are cleaned：It may be deposited using substrate surface is removed with strong oxidizing property compound solution
Organic molecule；Wherein SiO2SiO in/Si substrates2For 280~300nm；
Step (2), using carbon-contained catalyst to step（1）SiO after middle cleaning2/ Si liner oxidation layer surfaces are pre-processed；
Step（2）Described carbon-contained catalyst is graphene oxide quantum dot, graphene quantum dot or CNT；
Step (3), individual layer MoS is prepared using the method for chemical vapor deposition2Sample, specifically utilizes dual temperature area heating furnace pair
Sulphur source and molybdenum source are heated, and directly distance is 25cm in two sources, for ensureing S and MoO3Reaction；By SiO2/ Si substrate oxygen
Left-hand thread is filling MoO to change aspect down3On silica ware, grown；In growth course, the control condition of warm area 2 is with 20
DEG C/min speed is warming up to 680 DEG C, and is incubated 20min, room temperature quickly then is down in 20min, sample is obtained.
2. one kind as claimed in claim 1 prepares individual layer MoS2Method, it is characterised in that step（1）Concrete operations are：
1.1 by SiO2/ Si pieces cut into 1~2cm2Square tiles, are used as substrate；Wherein SiO2SiO in/Si pieces2For 280~
300nm；
Above-mentioned substrate ultrasonic wave is cleaned 10 minutes with deionized water under 1.2 normal temperature；
Above-mentioned substrate ultrasonic wave is cleaned 10 minutes with absolute ethyl alcohol under 1.3 normal temperature；
Above-mentioned substrate ultrasonic wave is cleaned 10 minutes with deionized water under 1.4 normal temperature；
Above-mentioned substrate ultrasonic wave is cleaned 10 minutes with strong oxidizing property compound solution under 1.5 normal temperature；
Above-mentioned substrate ultrasonic wave is cleaned 10 minutes with deionized water under 1.6 normal temperature, it is finally standby with the drying of argon gas rifle.
3. one kind as claimed in claim 1 prepares individual layer MoS2Method, wherein step（1）Described strong oxidizing property compound
For hydrogen peroxide.
4. one kind as claimed in claim 3 prepares individual layer MoS2Method, wherein step（1）Described strong oxidizing property compound
It is 20~30% hydrogenperoxide steam generators for mass fraction.
5. one kind as claimed in claim 1 prepares individual layer MoS2Method, it is characterised in that step（2）The pretreatment side of use
Method is that carbon-contained catalyst solution is spin-coated on into SiO using sol evenning machine2/ Si liner oxidation layer surfaces, spin coating machine speed is set to low
1000~2000 revs/min of speed, 7000~8000 revs/min at a high speed, spin-coating time is 30~40 seconds.
6. one kind as claimed in claim 1 prepares individual layer MoS2Method, it is characterised in that step（2）Described carbon containing catalysis
Agent is graphene oxide quantum dot, and the preprocess method of use is by SiO2The infiltration of/Si substrates is molten in graphene oxide quantum dot
In liquid, substrate is taken out using czochralski method, and dried up with argon gas rifle.
7. one kind as claimed in claim 1 prepares individual layer MoS2Method, it is characterised in that described sulphur source use 100mg liters
Magnificent sulphur, molybdenum source uses 2mg MoO3。
8. one kind as claimed in claim 1 prepares individual layer MoS2Method, it is characterised in that step（2）Carbon-contained catalyst thickness
Spend for 1 ~ 2nm.
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| CN106784915A (en) * | 2016-11-30 | 2017-05-31 | 哈尔滨工业大学 | A kind of preparation method of stainless steel surfaces Graphene corrosion-inhibiting coating |
| CN107083530B (en) * | 2017-04-11 | 2019-02-05 | 长春工业大学 | A kind of method of graphene quantum dot chemical activity induced growth rubrene film |
| CN108455673B (en) * | 2018-06-11 | 2019-12-31 | 苏州大学 | Method for growing single crystal two-dimensional transition metal sulfide |
| CN109455675B (en) * | 2018-11-27 | 2020-12-29 | 北京科技大学 | Preparation method of sulfur vacancy of transition metal sulfide nanosheet |
| CN110104686A (en) * | 2019-05-17 | 2019-08-09 | 南京邮电大学 | A kind of preparation method of nanotube-shaped molybdenum disulfide |
| CN110380028B (en) * | 2019-07-08 | 2022-09-09 | 武汉理工大学 | CNT/MoS 2 Lithium ion battery cathode material and preparation method thereof |
| CN114212824B (en) * | 2022-02-23 | 2022-06-28 | 浙江大学杭州国际科创中心 | Method for controllable growth of hexagram single-layer MoS2 |
| CN116199317B (en) * | 2023-03-10 | 2024-06-18 | 新疆大学 | Molybdenum disulfide/porous carbon sphere composite material for capacitive desalination and preparation method thereof |
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