CN106027016A - Inductive load voltage pulse width modulation demagnetizing circuit - Google Patents
Inductive load voltage pulse width modulation demagnetizing circuit Download PDFInfo
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- CN106027016A CN106027016A CN201610523778.XA CN201610523778A CN106027016A CN 106027016 A CN106027016 A CN 106027016A CN 201610523778 A CN201610523778 A CN 201610523778A CN 106027016 A CN106027016 A CN 106027016A
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Abstract
The invention discloses an inductive load voltage pulse width modulation demagnetizing circuit. The inductive load voltage pulse width modulation demagnetizing circuit comprises an input protection rectifying circuit and a main demagnetizing circuit. The input protection rectifying circuit is composed of a TVS tube or a bidirectional voltage-stabilizing diode and four rectifier diodes; the main demagnetizing circuit is composed of an NMOS tube M1, a load L1, a fly-wheel diode D6, a demagnetization voltage-stabilizing diode D8 (or a resistor), a bootstrap boost capacitor C1, a bootstrap boost auxiliary diode D7, a bootstrap boost capacitor charging and discharging loop control diode D10 (removable), a bootstrap voltage-dividing resistor R1 (removable), a bootstrap voltage-dividing resistor R2 (the resistance value can be zero), a driving voltage-dividing resistor R3, a driving voltage-dividing resistor R4 (the resistance value can be zero), a pulse width modulation stage conducting NMOS tube M2 (or triode), and an anti-NMOS tube breakdown voltage-stabilizing diode D9 (removable). The inductive load voltage pulse width modulation demagnetizing circuit is fast in response speed, simple in circuit, low in circuit cost, low in power consumption and fast in demagnetization.
Description
Technical field
The present invention relates to voltage PWM degausser, especially relate to a kind of inductive load voltage PWM degausser.
Background technology
Along with the fast development of electronic technology, voltage PWM technology can complete the Linear Control to controlled device owing to it need to change dutycycle, gets more and more and is applied to every field.nullThe wider voltage PWM technical controlling metal-oxide-semiconductor that is through wherein is applied to switch，Utilize fly-wheel diode simultaneously，Inductive load is carried out current constant control，But when cutting off inductive load every time，The reason can not suddenlyd change due to electric current in the existence of fly-wheel diode and inductive load，The energy accumulated on inductive load cannot be discharged rapidly，Thus cause cutting off slack-off，Traditional solution is a Zener diode and fly-wheel diode to be connected，Afterflow is realized as an afterflow entirety，Or a resistance and fly-wheel diode are connected，Afterflow is realized as an afterflow entirety，But owing to voltage PWM needs speed-sensitive switch metal-oxide-semiconductor to control electric current，Therefore the overall frequently break-make of above-mentioned afterflow can be caused，Thus cause Zener diode frequently to puncture and to flow through ohmically electric current bigger，Ultimately result in Zener diode or ohmically power consumption is the biggest，Therefore traditional method can not well solve the problems referred to above，This is accomplished by a circuit when voltage PWM speed-sensitive switch metal-oxide-semiconductor control inductive loads，Zener diode (or resistance) does not works，And when cutting off inductive load，Zener diode (or resistance) works，So can reduce the power consumption of diode (or resistance).
Summary of the invention
For realizing when voltage PWM speed-sensitive switch metal-oxide-semiconductor control inductive loads, Zener diode (or resistance) does not works, and when cutting off inductive load, Zener diode (or resistance) works, simultaneously because after cut-out inductive load, the decrease speed of the electric current above it is directly proportional with backward voltage, if use resistance, then flowing through ohmically voltage can be more and more less, thus electric current decrease speed can be more and more slower, if use Zener diode, then on Zener diode, voltage is substantially stationary, therefore electric current decrease speed substantially constant.Therefore it is an object of the invention to provide a kind of inductive load voltage PWM degausser, during the load of voltage PWM speed-sensitive switch metal-oxide-semiconductor control inductive, Zener diode does not works, and when cutting off inductive load, Zener diode works.
The technical solution used in the present invention is:
Scheme one: a kind of inductive load voltage PWM degausser:
The present invention includes input protection rectification circuit and degaussing main circuit；Input protection rectification circuit, including four diode D2～D5 of rectification and two-way TVS pipe or bi-directional voltage stabilizing diode D1；Degaussing main circuit, including NMOS tube M1, NMOS tube M2, audion Q1, loads L1, Zener diode D8, two diodes D6, D7, electric capacity C1 and four resistance R1～R4；nullOne end of load L1 connects the positive pole of Zener diode D8 respectively、The source electrode of NMOS tube M2 or the emitter stage of audion Q1、One end of resistance R3 and the positive pole of diode D7 are followed by VCC，The other end of load L1 connects the positive pole of diode D6 and the drain electrode of NMOS tube M1 respectively，The source electrode of NMOS tube M1 meets GND，The grid of NMOS tube M1 is input protection rectification circuit input end，One end of the positive pole connecting resistance R2 of diode D6，One end of the negative pole of diode D7 connecting resistance R1 respectively、With the other end through resistance R4 connecting resistance R3、Connect grid or the base stage of audion Q1 of NMOS tube M2，The other end of the other end connecting resistance R1 of electric capacity C1 and the common contact of the other end of resistance R3，The drain electrode of NMOS tube M2 or the colelctor electrode of audion Q1，Connect the negative pole of Zener diode D6 and the negative pole contact altogether of Zener diode D8.
Described degaussing main circuit, also includes diode D10；One end of the negative pole of diode D7 connecting resistance R1 respectively, connect one end of electric capacity C1 through diode D10, one end of electric capacity C1 is followed by grid or the base stage of audion Q1 of NMOS tube M2 through the other end of resistance R4 connecting resistance R3.
Scheme two: a kind of inductive load voltage PWM degausser: the present invention includes input protection rectification circuit and degaussing main circuit；Input protection rectification circuit, including four diode D2～D5 of rectification and two-way TVS pipe or bi-directional voltage stabilizing diode D1；Degaussing main circuit, including NMOS tube M1, NMOS tube M2, audion Q1, loads L1, two diode D6～D7, electric capacity C1 and five resistance R1～R5；nullOne end of one end of load L1 connecting resistance R5 respectively、The source electrode of NMOS tube M2 or the emitter stage of audion Q1、One end of resistance R3 and the positive pole of diode D7 are followed by VCC，The other end of load L1 connects the positive pole of diode D6 and the drain electrode of NMOS tube M1 respectively，The source electrode of NMOS tube M1 meets GND，The grid of NMOS tube M1 is input protection rectification circuit input end，One end of the positive pole connecting resistance R2 of diode D6，One end of the negative pole of diode D7 connecting resistance R1 respectively、One end of electric capacity C1、One end of electric capacity C1 is through the other end of resistance R4 connecting resistance R3 and the grid of NMOS tube M2 or the base stage of audion Q1，The drain electrode of NMOS tube M2 or the colelctor electrode of audion Q1 connect the negative pole of Zener diode D6 and the common contact of the other end of resistance R3，The other end connecting resistance R1 other end of electric capacity C1 and the common contact of the resistance R3 other end.
Scheme three: a kind of inductive load voltage PWM degausser: the present invention includes input protection rectification circuit and degaussing main circuit；Input protection rectification circuit, including four diode D2～D5 of rectification and two-way TVS pipe or bi-directional voltage stabilizing diode D1；Degaussing main circuit, including NMOS tube M1～M2, loads L1, Zener diode D8～D9, two diode D6～D7, electric capacity C1 and five resistance R1～R5；nullOne end of load L1 connects positive pole or one end of resistance R5 of Zener diode D8 respectively、The source electrode of NMOS tube M2、One end of resistance R3、The positive pole of Zener diode D9 and the positive pole of diode D7 are followed by VCC，The other end of load L1 connects the positive pole of diode D6 and the drain electrode of NMOS tube M1 respectively，The source electrode of NMOS tube M1 meets GND，The grid of NMOS tube M1 is input protection rectification circuit input end，One end of the positive pole connecting resistance R2 of diode D6，One end of the negative pole of diode D7 connecting resistance R1 respectively、One end of electric capacity C1、One end of electric capacity C1 connects the negative pole of Zener diode D9 through resistance R4、The other end of resistance R3 and the grid of NMOS tube M2，The drain electrode of NMOS tube M2 connects the negative pole of diode D6 and the common contact of the negative pole of Zener diode D8，Or the negative pole of diode D6 and the common contact of the resistance R3 other end.The other end connecting resistance R1 other end of electric capacity C1 and the common contact of the resistance R3 other end.
Scheme four: a kind of inductive load voltage PWM degausser: the present invention includes input protection rectification circuit and degaussing main circuit；Input protection rectification circuit, including four diode D2～D5 of rectification and two-way TVS pipe or bi-directional voltage stabilizing diode D1；Degaussing main circuit, including NMOS tube M1, NMOS tube M2, audion Q1, loads L1, Zener diode D8, three diodes D6, D7, D10, electric capacity C1 and five resistance R1～R5；nullOne end of one end of load L1 connecting resistance R5 respectively、The source electrode of NMOS tube M2 or the emitter stage of audion Q1、One end of resistance R3 and the positive pole of diode D7 are followed by VCC，The other end of load L1 connects the positive pole of diode D6 and the drain electrode of NMOS tube M1 respectively，The source electrode of NMOS tube M1 meets GND，The grid of NMOS tube M1 is input protection rectification circuit input end，One end of the positive pole connecting resistance R2 of diode D6，One end of the negative pole of diode D7 connecting resistance R1 respectively、With the one end meeting electric capacity C1 through diode D10、One end of electric capacity C1 is through the other end of resistance R4 connecting resistance R3 and the grid of NMOS tube M2 or the base stage of audion Q1，The drain electrode of NMOS tube M2 or the colelctor electrode of audion Q1 connect the common contact of the other end of diode D6 negative pole and resistance R5，The other end connecting resistance R1 other end of electric capacity C1 and the common contact of the resistance R3 other end.
Scheme five: a kind of inductive load voltage PWM degausser: the present invention includes input protection rectification circuit and degaussing main circuit；Input protection rectification circuit, including four diode D2～D5 of rectification and two-way TVS pipe or bi-directional voltage stabilizing diode D1；Degaussing main circuit, including NMOS tube M1～M2, loads L1, Zener diode D8～D9, two diodes D6, D7, D10, electric capacity C1 and five resistance R1～R5；nullOne end of load L1 connects positive pole or one end of resistance R5 of Zener diode D8 respectively、The source electrode of NMOS tube M2、One end of resistance R3、The positive pole of Zener diode D9 and the positive pole of diode D7 are followed by VCC，The other end of load L1 connects the positive pole of diode D6 and the drain electrode of NMOS tube M1 respectively，The source electrode of NMOS tube M1 meets GND，The grid of NMOS tube M1 is input protection rectification circuit input end，One end of the positive pole connecting resistance R2 of diode D6，One end of the negative pole of diode D7 connecting resistance R1 respectively、One end of electric capacity C1 is connect through diode D10、One end of electric capacity C1 connects the negative pole of Zener diode D9 respectively through resistance R4、The other end of resistance R3 and the grid of NMOS tube M2，The drain electrode of NMOS tube M2 connects the negative pole of Zener diode D6 and the common contact of the negative pole of Zener diode D8，Or the common contact of the other end of the negative pole of Zener diode D6 and resistance R5，The other end connecting resistance R1 other end of electric capacity C1 and the common contact of the resistance R3 other end.
In above five kinds of schemes, the input signal of described input protection rectification circuit is direct current signal or AC signal, and the magnitude of voltage of direct current signal is 2-1000V；The voltage effective value of AC signal is 2-1000V, and frequency is 50Hz or 60Hz；The control input signal of described degaussing main circuit be a voltage magnitude be 15V, frequency be the square-wave signal of 100-40000Hz.
The invention have the advantages that:
Circuit responce speed of the present invention is fast, can meet existing voltage PWM and carry out the response speed of control inductive load；Circuit is simple, and circuit cost is low, the most several yuan；Applied widely, it is applicable to various voltage PWM and carrys out the circuit of control inductive load；Low in energy consumption, compared to the mode the most in parallel with Zener diode with fly-wheel diode, power consumption saves 30%-99%；Degaussing is fast, and release time is that tradition is directly with the 5%-20% of mode inductive load release time of fly-wheel diode afterflow.
Accompanying drawing explanation
Fig. 1 is inductive load voltage PWM degausser.
Fig. 2 is inductive load voltage PWM degausser (substituting pulse width modulated stage conducting NMOS tube with audion).
Fig. 3 is inductive load voltage PWM degausser (substitutes with demagnetizing resistance and remove magnetic diode).
Fig. 4 is inductive load voltage PWM degausser (substituting pulse width modulated stage conducting NMOS tube with audion, substitute with demagnetizing resistance and remove magnetic diode).
Fig. 5 is inductive load voltage PWM degausser (increases anti-NMOS tube and puncture Zener diode).
Fig. 6 is inductive load voltage PWM degausser (substitutes with demagnetizing resistance and remove magnetic diode, increase anti-NMOS tube and puncture Zener diode).
Fig. 7 is inductive load voltage PWM degausser (increases charging and discharging circuit and control diode).
Fig. 8 is inductive load voltage PWM degausser (increases charging and discharging circuit and control diode, substitute pulse width modulated stage conducting NMOS tube with audion).
Fig. 9 is inductive load voltage PWM degausser (increases charging and discharging circuit and control diode, substitute with demagnetizing resistance and remove magnetic diode).
Figure 10 is inductive load voltage PWM degausser (increases charging and discharging circuit and control diode, substitute with demagnetizing resistance and remove magnetic diode, substitute pulse width modulated stage conducting NMOS tube with audion).
Figure 11 is inductive load voltage PWM degausser (increases charging and discharging circuit and control diode, increase anti-NMOS tube and puncture Zener diode).
Figure 12 is inductive load voltage PWM degausser (increases charging and discharging circuit and control diode, substitute with demagnetizing resistance and remove magnetic diode, increase anti-NMOS tube and puncture Zener diode).
Figure 13 is input protection rectification circuit.
Figure 14 is degaussing main circuit.
Detailed description of the invention
The invention will be further described with embodiment below in conjunction with the accompanying drawings.
As shown in Figure 1 and Figure 2, the present invention includes input protection rectification circuit and degaussing main circuit；Input protection rectification circuit, including four diode D2～D5 of rectification and two-way TVS pipe or bi-directional voltage stabilizing diode D1；Degaussing main circuit, including NMOS tube M1, NMOS tube M2, audion Q1, loads L1, Zener diode D8, two diodes D6, D7, electric capacity C1 and four resistance R1～R4；nullOne end of load L1 connects the positive pole of Zener diode D8 respectively、The source electrode of NMOS tube M2 or the emitter stage of audion Q1、One end of resistance R3 and the positive pole of diode D7 are followed by VCC，The other end of load L1 connects the positive pole of diode D6 and the drain electrode of NMOS tube M1 respectively，The source electrode of NMOS tube M1 meets GND，The grid of NMOS tube M1 is input protection rectification circuit input end，One end of the positive pole connecting resistance R2 of diode D6，One end of the negative pole of diode D7 connecting resistance R1 respectively、With the other end through resistance R4 connecting resistance R3、Connect grid or the base stage of audion Q1 of NMOS tube M2，The other end of the other end connecting resistance R1 of electric capacity C1 and the common contact of the other end of resistance R3，The drain electrode of NMOS tube M2 or the colelctor electrode of audion Q1，Connect the negative pole of Zener diode D6 and the negative pole contact altogether of Zener diode D8.
As shown in Figure 7, Figure 8, degaussing main circuit of the present invention, also include diode D10；One end of the negative pole of diode D7 connecting resistance R1 respectively, connect one end of electric capacity C1 through diode D10, one end of electric capacity C1 is followed by grid or the base stage of audion Q1 of NMOS tube M2 through the other end of resistance R4 connecting resistance R3.
As shown in Figure 3, Figure 4, the present invention includes input protection rectification circuit and degaussing main circuit；Input protection rectification circuit, including four diode D2～D5 of rectification and two-way TVS pipe or bi-directional voltage stabilizing diode D1；Degaussing main circuit, including NMOS tube M1, NMOS tube M2, audion Q1, loads L1, two diode D6～D7, electric capacity C1 and five resistance R1～R5；nullOne end of one end of load L1 connecting resistance R5 respectively、The source electrode of NMOS tube M2 or the emitter stage of audion Q1、One end of resistance R3 and the positive pole of diode D7 are followed by VCC，The other end of load L1 connects the positive pole of diode D6 and the drain electrode of NMOS tube M1 respectively，The source electrode of NMOS tube M1 meets GND，The grid of NMOS tube M1 is input protection rectification circuit input end，One end of the positive pole connecting resistance R2 of diode D6，One end of the negative pole of diode D7 connecting resistance R1 respectively、One end of electric capacity C1、One end of electric capacity C1 is through the other end of resistance R4 connecting resistance R3 and the grid of NMOS tube M2 or the base stage of audion Q1，The drain electrode of NMOS tube M2 or the colelctor electrode of audion Q1 connect the negative pole of Zener diode D6 and the common contact of the other end of resistance R3，The other end connecting resistance R1 other end of electric capacity C1 and the common contact of the resistance R3 other end.
As shown in Figure 5, Figure 6, the present invention includes input protection rectification circuit and degaussing main circuit；Input protection rectification circuit, including four diode D2～D5 of rectification and two-way TVS pipe or bi-directional voltage stabilizing diode D1；Degaussing main circuit, including NMOS tube M1～M2, loads L1, Zener diode D8～D9, two diode D6～D7, electric capacity C1 and five resistance R1～R5；nullOne end of load L1 connects positive pole or one end of resistance R5 of Zener diode D8 respectively、The source electrode of NMOS tube M2、One end of resistance R3、The positive pole of Zener diode D9 and the positive pole of diode D7 are followed by VCC，The other end of load L1 connects the positive pole of diode D6 and the drain electrode of NMOS tube M1 respectively，The source electrode of NMOS tube M1 meets GND，The grid of NMOS tube M1 is input protection rectification circuit input end，One end of the positive pole connecting resistance R2 of diode D6，One end of the negative pole of diode D7 connecting resistance R1 respectively、One end of electric capacity C1、One end of electric capacity C1 connects the negative pole of Zener diode D9 through resistance R4、The other end of resistance R3 and the grid of NMOS tube M2，The drain electrode of NMOS tube M2 connects the negative pole of diode D6 and the common contact of the negative pole of Zener diode D8，Or the negative pole of diode D6 and the common contact of the resistance R3 other end.The other end connecting resistance R1 other end of electric capacity C1 and the common contact of the resistance R3 other end.
As shown in Figure 9, Figure 10, the present invention includes input protection rectification circuit and degaussing main circuit；Input protection rectification circuit, including four diode D2～D5 of rectification and two-way TVS pipe or bi-directional voltage stabilizing diode D1；Degaussing main circuit, including NMOS tube M1, NMOS tube M2, audion Q1, loads L1, Zener diode D8, three diodes D6, D7, D10, electric capacity C1 and five resistance R1～R5；nullOne end of one end of load L1 connecting resistance R5 respectively、The source electrode of NMOS tube M2 or the emitter stage of audion Q1、One end of resistance R3 and the positive pole of diode D7 are followed by VCC，The other end of load L1 connects the positive pole of diode D6 and the drain electrode of NMOS tube M1 respectively，The source electrode of NMOS tube M1 meets GND，The grid of NMOS tube M1 is input protection rectification circuit input end，One end of the positive pole connecting resistance R2 of diode D6，One end of the negative pole of diode D7 connecting resistance R1 respectively、With the one end meeting electric capacity C1 through diode D10、One end of electric capacity C1 is through the other end of resistance R4 connecting resistance R3 and the grid of NMOS tube M2 or the base stage of audion Q1，The drain electrode of NMOS tube M2 or the colelctor electrode of audion Q1 connect the common contact of the other end of diode D6 negative pole and resistance R5，The other end connecting resistance R1 other end of electric capacity C1 and the common contact of the resistance R3 other end.
As shown in Figure 11, Figure 12, the present invention includes input protection rectification circuit and degaussing main circuit；Input protection rectification circuit, including four diode D2～D5 of rectification and two-way TVS pipe or bi-directional voltage stabilizing diode D1；Degaussing main circuit, including NMOS tube M1～M2, loads L1, Zener diode D8～D9, three diodes D6, D7, D10, electric capacity C1 and five resistance R1～R5；nullOne end of load L1 connects positive pole or one end of resistance R5 of Zener diode D8 respectively、The source electrode of NMOS tube M2、One end of resistance R3、The positive pole of Zener diode D9 and the positive pole of diode D7 are followed by VCC，The other end of load L1 connects the positive pole of diode D6 and the drain electrode of NMOS tube M1 respectively，The source electrode of NMOS tube M1 meets GND，The grid of NMOS tube M1 is input protection rectification circuit input end，One end of the positive pole connecting resistance R2 of diode D6，One end of the negative pole of diode D7 connecting resistance R1 respectively、One end of electric capacity C1 is connect through diode D10、One end of electric capacity C1 connects the negative pole of Zener diode D9 respectively through resistance R4、The other end of resistance R3 and the grid of NMOS tube M2，The drain electrode of NMOS tube M2 connects the negative pole of Zener diode D6 and the common contact of the negative pole of Zener diode D8，Or the common contact of the other end of the negative pole of Zener diode D6 and resistance R5，The other end connecting resistance R1 other end of electric capacity C1 and the common contact of the resistance R3 other end.
nullWith reference to shown in Fig. 1 ~ Figure 14，A kind of inductive load voltage PWM degausser，Integrated circuit is as shown in Figure 1，Shown in Fig. 2，It it is the inductive load voltage PWM degausser substituting pulse width modulated stage conducting NMOS tube with audion，Shown in Fig. 3，It it is the inductive load voltage PWM degausser substituting with demagnetizing resistance and removing magnetic diode，Shown in Fig. 4，It is to substitute pulse width modulated stage conducting NMOS tube with audion and remove the inductive load voltage PWM degausser of magnetic diode by demagnetizing resistance replacement，Shown in Fig. 5，It is to increase anti-NMOS tube and punctures the inductive load voltage PWM degausser of Zener diode,Shown in Fig. 6，It is to substitute with demagnetizing resistance to remove magnetic diode and increase anti-NMOS tube to puncture the inductive load voltage PWM degausser of Zener diode，Shown in Fig. 7，It is to increase charging and discharging circuit and controls the inductive load voltage PWM degausser of diode，Shown in Fig. 8，It is to increase charging and discharging circuit control diode and substitute the inductive load voltage PWM degausser of pulse width modulated stage conducting NMOS tube with audion，Shown in Fig. 9，It is to increase charging and discharging circuit control diode and substitute the inductive load voltage PWM degausser removing magnetic diode with demagnetizing resistance，Shown in Figure 10，It is to increase charging and discharging circuit and controls diode，Substitute with demagnetizing resistance and remove magnetic diode and substitute the inductive load voltage PWM degausser of pulse width modulated stage conducting NMOS tube with audion，Shown in Figure 11，It is to increase charging and discharging circuit and controls diode，Increase anti-NMOS tube and puncture the inductive load voltage PWM degausser of Zener diode，Shown in Figure 12，It is to increase charging and discharging circuit and controls diode，Substitute with demagnetizing resistance and remove magnetic diode and increase anti-NMOS tube to puncture the inductive load voltage PWM degausser of Zener diode，Described inductive load voltage PWM degausser includes degaussing main circuit shown in input protection rectification circuit shown in Figure 13 and Figure 14.
Further, described input protection rectification circuit is managed by D1(TVS or bi-directional voltage stabilizing diode), D2, D3, D4, D5(commutation diode) composition.Described degaussing main circuit is by M1 (pulse width modulation controlled NMOS tube), L1 (loads), D6 (fly-wheel diode), D8 (degaussing Zener diode) or R5 (demagnetizing resistance), C1 (Bootstrap electric capacity), D7 (Bootstrap booster diode), D10 (Bootstrap capacitor charge and discharge circuit controls diode (removable)), R1 (bootstrapping divider resistance (removable)), R2 (bootstrapping divider resistance (resistance can be zero)), R3 (driving divider resistance), R4 (driving divider resistance (resistance can be zero)) M2 (pulse width modulated stage conducting NMOS tube (available audion substitutes)), D9 (anti-NMOS tube punctures Zener diode (removable)) forms.
Further, the working method of inductive load voltage PWM degausser is described in conjunction with Fig. 1.Frequency 50Hz is inputted between Vin+ and Vin-in FIG; voltage effective value is the alternating voltage excitation of 220V; pumping signal changes into, through input protection rectification circuit, the full-wave direct current signal (voltage DC bias component is zero) that voltage effective value is 220V, is driving main circuit Input end to input a square-wave signal (voltage magnitude be 15V, frequency be the square-wave signal of 2000Hz) simultaneously.When circuit just powers on, when square-wave signal level is high, pulse width modulation controlled NMOS tube turns on, load to obtain electric work, full-wave direct current signal is charged to Bootstrap electric capacity by Bootstrap booster diode, driving divider resistance and bootstrapping divider resistance simultaneously, now Bootstrap electric capacity both end voltage is less than or equal to load both end voltage, and i.e. two drive divider resistance two ends no-voltage difference or pressure reduction is negative value, then pulse width modulated stage conducting NMOS tube does not works；nullWhen square-wave signal level is low，Pulse width modulation controlled NMOS tube is closed，Load both end voltage is equal，And now Bootstrap electric capacity both end voltage can not be suddenlyd change，Therefore Bootstrap booster diode cut-off，Bootstrap electric capacity is by driving divider resistance simultaneously、Load discharge and bootstrapping divider resistance electric discharge，And the discharge time of electric capacity is more than the low level time of square wave，It is then between low period at square-wave signal，Divider resistance two ends are driven to produce pressure reduction，Therefore pulse width modulated stage conducting NMOS tube grid voltage is higher than source voltage，Pulse width modulated stage conducting NMOS tube conducting，Will degaussing Zener diode or demagnetizing resistance short circuit，Now degaussing Zener diode or demagnetizing resistance do not work，Simultaneously as load is inductive load，Therefore close when pulse width modulation controlled NMOS，Electric current in load can not suddenly change，Load and turn on NMOS tube afterflow by the pulse width modulated stage of fly-wheel diode and conducting；nullAnd when square-wave signal level is high again，Pulse width modulation controlled NMOS tube turns on，Full-wave direct current signal gives load charging，Full-wave direct current signal passes through Bootstrap booster diode simultaneously、Divider resistance and bootstrapping divider resistance is driven to charge to Bootstrap electric capacity，Now Bootstrap electric capacity both end voltage is less than or equal to load both end voltage，I.e. two drive divider resistance two ends no-voltage difference or pressure reduction is negative value，Then pulse width modulated stage conducting NMOS tube does not works，The such working in reciprocating mode of circuit can complete the current constant control to inductive load，Avoid again pulse width modulated stage degaussing Zener diode or demagnetizing resistance work to produce bigger power consumption simultaneously，And when needs cut off inductive load，Square-wave signal is low，Now Bootstrap electric capacity discharges electric charge by divider resistance，When divider resistance both end voltage is less than pulse width modulated stage conducting NMOS tube minimum conducting voltage，Pulse width modulated stage conducting NMOS tube is closed，Then degaussing Zener diode or demagnetizing resistance work，Inductive load is by fly-wheel diode and degaussing Zener diode or demagnetizing resistance release magnetic.
Above-mentioned detailed description of the invention is used for illustrating the present invention rather than limiting the invention, in the protection domain of spirit and claims of the present invention, and any modifications and changes that the present invention is made, both fall within protection scope of the present invention.
Claims (6)
1. an inductive load voltage PWM degausser, it is characterised in that: include input protection rectification circuit and degaussing main circuit；Input protection rectification circuit, including four diode D2～D5 of rectification and two-way TVS pipe or bi-directional voltage stabilizing diode D1；Degaussing main circuit, including NMOS tube M1, NMOS tube M2, audion Q1, loads L1, Zener diode D8, two diodes D6, D7, electric capacity C1 and four resistance R1～R4；nullOne end of load L1 connects the positive pole of Zener diode D8 respectively、The source electrode of NMOS tube M2 or the emitter stage of audion Q1、One end of resistance R3 and the positive pole of diode D7 are followed by VCC，The other end of load L1 connects the positive pole of diode D6 and the drain electrode of NMOS tube M1 respectively，The source electrode of NMOS tube M1 meets GND，The grid of NMOS tube M1 is input protection rectification circuit input end，One end of the positive pole connecting resistance R2 of diode D6，One end of the negative pole of diode D7 connecting resistance R1 respectively、With the other end through resistance R4 connecting resistance R3、Connect grid or the base stage of audion Q1 of NMOS tube M2，The other end of the other end connecting resistance R1 of electric capacity C1 and the common contact of the other end of resistance R3，The drain electrode of NMOS tube M2 or the colelctor electrode of audion Q1，Connect the negative pole of Zener diode D6 and the negative pole contact altogether of Zener diode D8.
A kind of inductive load voltage PWM degausser the most according to claim 1, it is characterised in that: described degaussing main circuit, also include diode D10；One end of the negative pole of diode D7 connecting resistance R1 respectively, connect one end of electric capacity C1 through diode D10, one end of electric capacity C1 is followed by grid or the base stage of audion Q1 of NMOS tube M2 through the other end of resistance R4 connecting resistance R3.
3. an inductive load voltage PWM degausser, it is characterised in that: include input protection rectification circuit and degaussing main circuit；Input protection rectification circuit, including four diode D2～D5 of rectification and two-way TVS pipe or bi-directional voltage stabilizing diode D1；Degaussing main circuit, including NMOS tube M1, NMOS tube M2, audion Q1, loads L1, two diode D6～D7, electric capacity C1 and five resistance R1～R5；nullOne end of one end of load L1 connecting resistance R5 respectively、The source electrode of NMOS tube M2 or the emitter stage of audion Q1、One end of resistance R3 and the positive pole of diode D7 are followed by VCC，The other end of load L1 connects the positive pole of diode D6 and the drain electrode of NMOS tube M1 respectively，The source electrode of NMOS tube M1 meets GND，The grid of NMOS tube M1 is input protection rectification circuit input end，One end of the positive pole connecting resistance R2 of diode D6，One end of the negative pole of diode D7 connecting resistance R1 respectively、One end of electric capacity C1、One end of electric capacity C1 is through the other end of resistance R4 connecting resistance R3 and the grid of NMOS tube M2 or the base stage of audion Q1，The drain electrode of NMOS tube M2 or the colelctor electrode of audion Q1 connect the negative pole of Zener diode D6 and the common contact of the other end of resistance R3，The other end connecting resistance R1 other end of electric capacity C1 and the common contact of the resistance R3 other end.
4. an inductive load voltage PWM degausser, it is characterised in that: include input protection rectification circuit and degaussing main circuit；Input protection rectification circuit, including four diode D2～D5 of rectification and two-way TVS pipe or bi-directional voltage stabilizing diode D1；Degaussing main circuit, including NMOS tube M1～M2, loads L1, Zener diode D8～D9, two diode D6～D7, electric capacity C1 and five resistance R1～R5；nullOne end of load L1 connects positive pole or one end of resistance R5 of Zener diode D8 respectively、The source electrode of NMOS tube M2、One end of resistance R3、The positive pole of Zener diode D9 and the positive pole of diode D7 are followed by VCC，The other end of load L1 connects the positive pole of diode D6 and the drain electrode of NMOS tube M1 respectively，The source electrode of NMOS tube M1 meets GND，The grid of NMOS tube M1 is input protection rectification circuit input end，One end of the positive pole connecting resistance R2 of diode D6，One end of the negative pole of diode D7 connecting resistance R1 respectively、One end of electric capacity C1、One end of electric capacity C1 connects the negative pole of Zener diode D9 through resistance R4、The other end of resistance R3 and the grid of NMOS tube M2，The drain electrode of NMOS tube M2 connects the negative pole of diode D6 and the common contact of the negative pole of Zener diode D8，Or the negative pole of diode D6 and the common contact of the resistance R3 other end，The other end connecting resistance R1 other end of electric capacity C1 and the common contact of the resistance R3 other end.
5. an inductive load voltage PWM degausser, it is characterised in that: include input protection rectification circuit and degaussing main circuit；Input protection rectification circuit, including four diode D2～D5 of rectification and two-way TVS pipe or bi-directional voltage stabilizing diode D1；Degaussing main circuit, including NMOS tube M1, NMOS tube M2, audion Q1, loads L1, Zener diode D8, three diodes D6, D7, D10, electric capacity C1 and five resistance R1～R5；nullOne end of one end of load L1 connecting resistance R5 respectively、The source electrode of NMOS tube M2 or the emitter stage of audion Q1、One end of resistance R3 and the positive pole of diode D7 are followed by VCC，The other end of load L1 connects the positive pole of diode D6 and the drain electrode of NMOS tube M1 respectively，The source electrode of NMOS tube M1 meets GND，The grid of NMOS tube M1 is input protection rectification circuit input end，One end of the positive pole connecting resistance R2 of diode D6，One end of the negative pole of diode D7 connecting resistance R1 respectively、With the one end meeting electric capacity C1 through diode D10、One end of electric capacity C1 is through the other end of resistance R4 connecting resistance R3 and the grid of NMOS tube M2 or the base stage of audion Q1，The drain electrode of NMOS tube M2 or the colelctor electrode of audion Q1 connect the common contact of the other end of diode D6 negative pole and resistance R5，The other end connecting resistance R1 other end of electric capacity C1 and the common contact of the resistance R3 other end.
6. an inductive load voltage PWM degausser, it is characterised in that: include input protection rectification circuit and degaussing main circuit；Input protection rectification circuit, including four diode D2～D5 of rectification and two-way TVS pipe or bi-directional voltage stabilizing diode D1；Degaussing main circuit, including NMOS tube M1～M2, loads L1, Zener diode D8～D9, three diodes D6, D7, D10, electric capacity C1 and five resistance R1～R5；
nullOne end of load L1 connects positive pole or one end of resistance R5 of Zener diode D8 respectively、The source electrode of NMOS tube M2、One end of resistance R3、The positive pole of Zener diode D9 and the positive pole of diode D7 are followed by VCC，The other end of load L1 connects the positive pole of diode D6 and the drain electrode of NMOS tube M1 respectively，The source electrode of NMOS tube M1 meets GND，The grid of NMOS tube M1 is input protection rectification circuit input end，One end of the positive pole connecting resistance R2 of diode D6，One end of the negative pole of diode D7 connecting resistance R1 respectively、One end of electric capacity C1 is connect through diode D10、One end of electric capacity C1 connects the negative pole of Zener diode D9 respectively through resistance R4、The other end of resistance R3 and the grid of NMOS tube M2，The drain electrode of NMOS tube M2 connects the negative pole of Zener diode D6 and the common contact of the negative pole of Zener diode D8，Or the common contact of the other end of the negative pole of Zener diode D6 and resistance R5，The other end connecting resistance R1 other end of electric capacity C1 and the common contact of the resistance R3 other end.
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| CN106027016B (en) | 2018-08-14 |
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