CN106025791A - Laser radiation source plant growth device - Google Patents
Laser radiation source plant growth device Download PDFInfo
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- CN106025791A CN106025791A CN201610474192.9A CN201610474192A CN106025791A CN 106025791 A CN106025791 A CN 106025791A CN 201610474192 A CN201610474192 A CN 201610474192A CN 106025791 A CN106025791 A CN 106025791A
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- laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
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- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G7/00—Botany in general
- A01G7/04—Electric or magnetic or acoustic treatment of plants for promoting growth
- A01G7/045—Electric or magnetic or acoustic treatment of plants for promoting growth with electric lighting
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
- Y02P60/14—Measures for saving energy, e.g. in green houses
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- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Biodiversity & Conservation Biology (AREA)
- Botany (AREA)
- Ecology (AREA)
- Forests & Forestry (AREA)
- Environmental Sciences (AREA)
- Cultivation Of Plants (AREA)
Abstract
The invention discloses a laser radiation source plant growth device. The laser radiation source plant growth device comprises a protection casing, a nano light guide plate, a nano coating reflection cover, a semiconductor laser device, a laser control mechanism and a power source. The semiconductor laser device has advantages of high photoelectric conversion efficiency, accurate wavelength setting, high reliability and convenient control, the semiconductor laser device is in matching with the laser control mechanism for use, laser intensity and/or time are adjustable, high efficiency plant growth is further facilitated, and the power source is used for supplying power for the laser control mechanism for normal operation. The laser radiation source plant growth device is advantaged in that design is novel, the structure is simple, and the laser radiation source plant growth device has economic and practical performance, emitted-laser wavelength and the ratio are scientific, the laser intensity and/or time are adjustable, illumination intensity and illumination time demands of different plants at different growth stages can be satisfied, plant growth photosynthesis efficiency is improved, high efficiency plant growth is facilitated, insect disease generation possibility is reduced, so output and quality are improved, and relatively high economic and social values are realized.
Description
Technical field
The present invention relates to plant growth device technical field, particularly relate to a kind of lasing source plant growing dress
Put.
Background technology
Luminous environment is one of growth and development of plants indispensable important physical environmental factors.Light is by affecting light
Cooperation regulates the growth promoter of plant with, photomorphogenesis and photoperiod, owing to residing climate zone is different or
The reasons such as seasonal variations, sometimes crops are inevitably grown in Light Stress.In recent years, China
North China most area including Beijing experienced by long haze weather winter, and the low temperature caused is few
According to bringing serious retardation of growth to the plantation of crops for rotation facilities vegetable of surviving the winter, the most destructive strike,
Utilizing artificial light source to carry out light filling, help facilities vegetable is quickly, safety grows is a requisite measure.It addition,
Along with continuing to increase of national policy support dynamics, whole nation photovoltaic greenhouse project also gets more and more.It is also required to people
Work light source light filling technology carrys out supplementary light.Crop is also caused bigger by a large amount of photovoltaic greenhouses occurred in recent years
Shading affects.The long-term low light level growth of crops can cause that plant nutrition body is the most healthy and the strongest, fruit drop serious,
The problems such as fruit development is slowly, sugar content reduces, yield declines, quality deteriorates.Compensate when crop is in light
When point is following, blade net capacity of photosynthesis few even zero, this seriously inhibits crop normal growth
Demand to photosynthate.Plant growing the requirement of artificial light source is embodied in spectrum property, luminous efficiency and
The aspects such as service life.In terms of spectrum property, both required that light source can guarantee that the plant photosynthesis demand to light quality,
Reduce unnecessary invalid spectrum and energy consumption the most as far as possible；In terms of luminous efficiency, it is desirable to send photosynthetic has
Effect amount of radiation reaches higher level with the ratio of power consumption；At other aspect of performances, it is desirable to making of artificial light source
Longer with the time limit, light decay is smaller, cost performance is higher.
Nineteen fifty-seven, Robert's Emerson (R.Emerson) is observed, at far-red light (wavelength is more than 685nm)
Under the conditions of, such as supplementary HONGGUANG (wavelength 650nm), then quantum yield increases, and than the light of both wavelength
Summation when individually irradiating also wants big.The light of such two kinds of wavelength promotes that the phenomenon of photosynthetic efficiency is called double light and increases
Benefit effect or Emerson effect (Emerson effect).May be considered far-red light and helped short wavelength's
Light, or the light of short wavelength helped far-red light.
Summary of the invention
Embodiments provide a kind of lasing source plant growing device, to promote the efficient raw of plant
Long.
In order to solve the problems referred to above, the embodiment of the invention discloses a kind of lasing source plant growing device,
Including protection shell, nanometer light guide plate, nano coating reflection shield, semiconductor laser, laser controlling mechanism
And power supply；
Described nano coating reflection shield is concave shape, and has an accommodation space, and offers multiple logical on it
Hole；The quantity of described semiconductor laser is identical with the quantity of described through hole, and is fixed in described through hole,
And make the luminous end of described semiconductor laser be positioned at the accommodation space of described nano coating reflection shield；
Described nano coating reflection shield is fixed in described protection shell, and described nanometer light guide plate is fixed on described
On the opening of protection shell, thus cover the opening of described protection shell；
Described laser controlling mechanism is connected with described semiconductor laser, is used for controlling semiconductor laser and is sent out
Laser light quality, intensity of illumination and the light application time penetrated；
Described power supply is connected with described laser controlling mechanism, to power described laser controlling mechanism.
Optionally, described semiconductor laser includes the semiconductor laser of emitting ultraviolet light, and what it was launched swashs
The a length of 380nm of light wave；Launching the semiconductor laser of royal purple light, its optical maser wavelength launched is 405nm；Send out
Penetrating the semiconductor laser of blue light, its optical maser wavelength launched is 450nm；Launch the semiconductor laser of HONGGUANG
Device, its optical maser wavelength launched is 660nm；Launch the semiconductor laser of far-red light, its laser launched
Wavelength is 730nm.
Optionally, described laser controlling mechanism includes controller U1, driver and laser pulse generation circuit；
Described controller U1 is connected with described driver signal, and described driver occurs electricity with described laser pulse
Road signal connects, and described laser pulse generation circuit is connected with described semiconductor laser circuit.
Optionally, described HONGGUANG is (4～10) with the light quality ratio of blue light: 1；Described HONGGUANG is with remote
The light quality ratio of HONGGUANG is (2～8): 1.
Optionally, described lasing source plant growing device also includes intensity of illumination sensor, described illumination
Intensity sensor is connected with described controller U1 signal.
Optionally, described nano coating reflection shield and nanometer light guide plate are square.
Optionally, described nanometer light guide plate is the arc of evagination.
The present invention provides a kind of lasing source plant growing device, it include protecting shell, nanometer light guide plate,
Nano coating reflection shield, semiconductor laser, laser controlling mechanism and power supply；Described nano coating reflection shield
Being fixed in described protection shell, described nanometer light guide plate is fixed on the opening of described protection shell, thus
Cover the opening of described protection shell；Described laser controlling mechanism is connected with described semiconductor laser, is used for
Control the laser light quality that semiconductor laser is launched；Described power supply is connected with described laser controlling mechanism, with
Described laser controlling mechanism is powered.Semiconductor laser can launch the laser of 5 kinds of wavelength, beneficially plant
Carry out efficient photosynthesis；Further, semiconductor laser has electricity conversion height, wavelength arranges essence
Accurate, irradiate efficiently, life-span length and reliability is high, be easy to the advantages such as control, itself and laser controlling mechanism
With the use of, it is achieved intensity and/or the time of launching laser are adjustable, with satisfied different plants in different growths
Stage, to intensity of illumination and the demand of light application time, is more beneficial for the efficient growth of plant.It is sharp that power supply is used for
Photocontrol mechanism powers, and for laser controlling, mechanism normally works.The lasing source plant that the present invention provides is raw
Growth device is novel in design, and simple in construction is economical and practical；Laser intensity and/or the time launched are adjustable, permissible
Meet plant in different growth stage to intensity of illumination and the demand of light application time, improve plant growing photosynthetic
Functioning efficiency, promotes plant efficient growth, reduces pest and disease damage and occurs, thus improve the yield and quality, has
Higher economy and social value.
Accompanying drawing explanation
By reading the detailed description of hereafter preferred implementation, various other advantage and benefit for ability
Territory those of ordinary skill will be clear from understanding.Accompanying drawing is only used for illustrating the purpose of preferred implementation, and also
It is not considered as limitation of the present invention.And in whole accompanying drawing, it is denoted by the same reference numerals identical
Parts.In the accompanying drawings:
Fig. 1 is the structural representation of the lasing source plant growing device of the present invention；
Fig. 2 is the structural representation of the lasing source plant growing device of the present invention；
Fig. 3 is the electrical block diagram of the laser controlling mechanism of the present invention.
Fig. 4 is the solar radiation spectrum schematic diagram of the photosynthesis absorption of the plant of the present invention；
Description of reference numerals: 1-protects shell；2-nanometer light guide plate；3-nano coating reflection shield；4-nanometer
Coating reflection shield.
Detailed description of the invention
Below with reference to accompanying drawing and describe the present invention in detail in conjunction with the embodiments.It should be noted that not
In the case of conflict, the embodiment in the present invention and the feature in embodiment can be mutually combined.
Embodiment 1
Refer to Fig. 1, the figure shows the lasing source plant growing device that the embodiment of the present invention one provides.
This lasing source plant growing device includes: protection shell, nanometer light guide plate, nano coating reflection shield,
Semiconductor laser, laser controlling mechanism, power supply and intensity of illumination sensor；
Described nano coating reflection shield is concave shape, and has an accommodation space, and offers multiple logical on it
Hole；The quantity of described semiconductor laser is identical with the quantity of described through hole, and is fixed in described through hole,
And make the luminous end of described semiconductor laser be positioned at the accommodation space of described nano coating reflection shield；And
And it is highly preferred that described nano coating reflection shield is square, described nanometer light guide plate is also square, described in receive
Rice light guide plate covers the opening of described nano coating reflection shield, and closes described accommodation space；Now when described
During semiconductor laser luminescence, one part laser can directly by after nano coating reflection shield to emission；
And after remaining part is reflected by nano coating reflection shield, also by described nanometer light guide plate to emission；
Thus utilize the light scattering effect of the nanoparticle being dispersed in nanometer light guide plate, by the point source of laser
It is changed into area source, thus the laser of this lasing source plant growing device range of exposures can become big, light source
The irradiance of output is evenly；Described nano coating reflection shield is connected with described protection shell, is effectively improved light
Line total reflectivity and scattered power, thus improve the effective rate of utilization of the LASER Light Source of plant growing device, it is achieved
Energy-saving consumes.
And in the present embodiment, described semiconductor laser could be arranged to 5 kinds, and includes emitting ultraviolet light
Semiconductor laser, its optical maser wavelength launched is 380nm；Launch the semiconductor laser of royal purple light, its
The optical maser wavelength launched is 405nm；Launching the semiconductor laser of blue light, its optical maser wavelength launched is
450nm；Launching the semiconductor laser of HONGGUANG, its optical maser wavelength launched is 660nm；Launch far-red light
Semiconductor laser, its optical maser wavelength launched is 730nm.
In the present embodiment, described nano coating reflection shield and semiconductor laser are respectively positioned in described protection shell,
The most described nano coating reflection shield is fixed in described protection shell, and described nanometer light guide plate is fixed on described guarantor
Protect the opening part of shell.
Described laser controlling mechanism is connected with described semiconductor laser, is used for controlling semiconductor laser and is sent out
The laser light quality penetrated (refers to that the proportioning of the laser of various wavelength, specially wavelength are the ultraviolet light of 380nm, 405nm
Royal purple light, the blue light of 450nm, the HONGGUANG of 660nm and the far-red light of 730nm), intensity of illumination and light week
Phase etc.；Described power supply is connected with laser controlling mechanism, for powering for described laser controlling mechanism；And be
Meet different applied environments, this power supply arrange power supply mode include external municipal administration power supply, common batteries,
Solar module etc..
Further, power supply has voltage regulation unit, for the low-tension supply stable for the offer of laser controlling mechanism,
Such as DC12V power supply, the voltage output end of this voltage regulation unit is connected with laser controlling mechanism.Further, depend on
According to photosynthesis photoreaction and dark reaction principle, the power supply that mutually described semiconductor laser is transmitted can use
The pulse laser Switching Power Supply controlled by controller U1, the most greatly to save energy consumption, Er Qie
Photosynthesis rate under the conditions of irradiating than continuous light under the conditions of pulsed light is greatly enhanced, and this structure will
It is described below.
For opening described semiconductor laser suitable time, in the present embodiment, described lasing source is planted
Thing grower also includes intensity of illumination sensor, and described intensity of illumination sensor and described laser controlling
Mechanism connects, and is sent to described laser controlling mechanism with the plant growth environment illuminance parameter detected,
Described laser controlling mechanism is according to described plant growth environment illuminance parameter, in conjunction with the database information set
Control the opening and closing of semiconductor laser, i.e. judge that current environment carries out people the need of opening semiconductor laser
Work light filling, and control the active power of described semiconductor laser, such as when by PWM to described half
Conductor laser is controlled room, thus it is possible to vary the dutycycle of described PWM.
In the present embodiment, described laser controlling mechanism includes that controller U1, driver and laser pulse occur electricity
Road；
Described controller U1 is ATXMEGA32A4-AU controller, and described controller U1 includes 44 pins,
Its 8th pin ground connection；9th pin connects+3.3V power supply；18th pin ground connection；19th pin connects
+ 3.3V power supply；38th pin ground connection；39th pin connects+3.3V power supply；Its 30th pin ground connection,
31st pin connects+3.3V power supply.
Described driver is IXDN604 chip, and the 11st pin of described controller U1 is connected by resistance R4
INB pin in described IXDN604 chip；And one end ground connection of resistance R6, the other end is also connected to described
The INB pin of IXDN604 chip；The GND pin ground connection of described IXDN604 chip, its VCC pin leads to
Cross resistance R3 and be connected to described+12V DC source (VCC power supply)；One end ground connection of electric capacity C3, another
End is connected to the VCC pin of described IXDN604 chip, so that described VCC end is carried out voltage stabilizing；By above-mentioned
Connect, when described controller U1 is by its 11st pin (PC1 pin) output switching signal, permissible
Powerful switching current signal is exported by the OUTB pin of described IXDN604 chip.
Described driver is connected with described laser pulse generation circuit, thus under the driving of described driver,
Produce laser pulse；Specifically, described laser pulse generation circuit includes field effect transistor Q1, diode D1
And semiconductor laser D2；The OUTB pin of described driver (IXDN604 chip) passes through resistance R5
It is connected to the G end of described field effect transistor Q1；The D end of described field effect transistor Q1 is connected to by resistance R2
The power supply of+200V；The S end ground connection of described field effect transistor；One end of the most described electric capacity C1 and C2 is respectively
Ground connection；The other end links together, and is connected to+200V power supply；So that electric capacity C1 and C2 forms height
The filter capacitor of pressure input power；The minus earth of described diode D1, described semiconductor laser D2's
Positive pole passes through resistance R7 ground connection；The positive pole of described diode D1 connects with the negative pole of described semiconductor laser D2
Connecing, and be connected to one end of electric capacity C4, the other end of described electric capacity C4 is connected to described field effect transistor Q1
D end.
In the present embodiment, wherein resistance R2 is charging current limiter resistance, and resistance R7 is pulse current current-limiting resistance,
Electric capacity C4 is storage capacitor, and+200V power supply is input HVB high voltage bias, and diode D1 is clamp diode,
D2 is semiconductor laser, and field effect transistor Q1 is for controlling switch.When field effect transistor Q1 disconnects ,+200V
HVB high voltage bias is charged to storage capacitor C4 by resistance R2, and the voltage at electric capacity C4 two ends raises immediately, charging
After completing, the voltage UC at storage capacitor two ends is i.e. equal, when field effect transistor Q1 with HVB high voltage bias voltage+200V
After Guan Bi, storage capacitor C4 is by field effect transistor Q1, electric discharge current-limiting resistance R7 and semiconductor laser D2
The loop instantaneous discharge formed, the voltage being added in semiconductor laser D2 two ends is-200V.
Compared with ordinary lamps light source and LED light source, semiconductor laser (LD) is as plant culture light source
Have more precisely, efficiently, low consumption, abridged edition, the feature such as with strong points, particularly as follows:
Light source is smaller light；Low voltage drive, drives power supply smaller and more exquisite；Heat radiation is minimum, can be close to planting
Thing irradiates；Short pulse illumination can be carried out, it is possible to decrease power demand；Deterioration is few, and service life is long, up to 50000
Hour；As long as radiator, chiller is little；Laser light quality has efficiency light excitation behavior, more energy efficient
Joint consumption；Can be for the most suitable wavelength of different plants, different growth phases and different planting environment and light quality
Proportioning, in the present embodiment, the laser of semiconductor laser is precisely set as the ultraviolet light of 380nm, 405nm
Royal purple light, the blue light of 450nm, the HONGGUANG of 660nm and 730nm far-red light light proportioning combination, to planting
Thing photosynthesis does not has unnecessary unnecessary wavelength；Electric energy is converted into the conversion efficiency of luminous energy and is up to more than 50%.
In above-mentioned semiconductor laser, the laser red light of described transmitting and light quality (R/B) ratio of blue light
(HONGGUANG and the light quality ratio of blue light) is (4～10): 1；The laser red light of described transmitting is with the reddest
Light quality (R/FR) ratio of light is (2～8): 1；The royal purple light LD of 405nm is 1～2；380nm
Ultraviolet light LD be 1～2.
The LASER Light Source configuration of above-mentioned semiconductor laser and wavelength select to be mainly based upon photosynthesis of plant
The research of ultimate principle.The solar radiation spectrum that the photosynthesis of plant absorbs as shown in Figure 4, green plants
Photosynthesis effective spectral range is 380nm-730nm, HONGGUANG that what the photosynthesis of plant mainly absorbed is and
Blue light, additionally, the also ultraviolet of fraction and infrared ray.
In conjunction with Fig. 4 it can be seen that the photosynthesis of plant occurs in chloroplast, chloroplast is green plants
Intracellular carry out photosynthetic structure.Chlorophyll (chlorophyll a and leaf is mainly contained in the chloroplast of plant
Verdazulene b), β-carotenoid (carotene and phylloxanthin), phytochrome (Pfr, Pr).Chlorophyll
The blue light that spectral peaks is 450nm that a, chlorophyll b and β-carotenoid mainly absorb and 660nm
HONGGUANG, phytochrome absorption peak is 380nm, 660nm and 730nm.Phytochrome regulates multiple difference
The plant reaction to light, including photoperiod, seed germination, Zhan Ye, hypocotyl elongation and de-etiolation.Therefore,
The present invention selects to play the growth promoter of plant the light proportioning combination of critical effect, the i.e. purple of 380nm
Outer light, the royal purple light of 405nm, the blue light of 450nm, the HONGGUANG of 660nm and the far-red light of 730nm.This
Outward, the ultraviolet light of the 380nm selected in the present embodiment and the royal purple luminous energy of 405nm promote Anthocyanin
Formation, and some insect pest can also be played certain preventive and therapeutic effect.
Photosynthesis can be divided into two steps to have research to confirm, one be just can must carry out under light,
By the photoreaction caused by light.It can be divided into again primary reaction, and electron transmission and photophosphorylation two
Stage；Another is then the general chemical reaction (can also carry out under light) that need not light, and it is two
Carbonoxide is fixed and reduction becomes organic reaction, i.e. dark reaction.
The Wa Baige (O.Warburg) of Germany carries out flash point test with algae, on the premise of light energy is identical,
The continuous irradiation of one, another kind flash irradiation, the middle interval necessarily dark phase, (glisten 0.0034S every time,
Intermittently 0.0166S, 50 times per second), find that the latter's photosynthetic efficiency is 200% under continuous light～400%.
These experiments indicate photosynthesis can be divided into light requirement photoreaction (light reaction) and not light requirement dark the most instead
Should (dark reaction) two stages.
Kozai etc. use LED pulsed light to study the growth of Caulis et Folium Lactucae sativae and the impact of light compositing reaction,
Result shows, under the conditions of the pulsed light that the cycle is 100 below μ s, Caulis et Folium Lactucae sativae growth fraction continuous light irradiates condition
Under facilitation effect improve 20%, thus confirm that employing different frequency pulsed light irradiates Caulis et Folium Lactucae sativae and can accelerate
The imagination of its growth.Tanaka etc., by the practical research to LED plant culture, have inquired into pulsed light
Exposure period and the dutycycle impact on plant growing, result shows, when dutycycle reaches 25%～50%, can
Accelerate plant growing.
Therefore, the power supply that in the present embodiment, semiconductor laser is transmitted uses the arteries and veins controlled by controller U1
Rush switch mode power supply, not only can greatly save energy consumption, and irradiate than continuous light under the conditions of pulsed light
Under the conditions of photosynthesis rate can be greatly enhanced, be more conducive to promote plant efficient growth.
Last it is noted that above example is only in order to illustrate technical scheme, rather than it is limited
System；Although the present invention being described in detail with reference to previous embodiment, those of ordinary skill in the art
It is understood that the technical scheme described in foregoing embodiments still can be modified by it, or to it
Middle part technical characteristic carries out equivalent；And these amendments or replacement, do not make appropriate technical solution
Essence departs from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (7)
1. a lasing source plant growing device, it is characterised in that include protecting shell, nanometer guide-lighting
Plate, nano coating reflection shield, semiconductor laser, laser controlling mechanism and power supply；
Described nano coating reflection shield is concave shape, and has an accommodation space, and offers multiple logical on it
Hole；The quantity of described semiconductor laser is identical with the quantity of described through hole, and is fixed in described through hole,
And make the luminous end of described semiconductor laser be positioned at the accommodation space of described nano coating reflection shield；
Described nano coating reflection shield is fixed in described protection shell, and described nanometer light guide plate is fixed on described
On the opening of protection shell, thus cover the opening of described protection shell；
Described laser controlling mechanism is connected with described semiconductor laser, is used for controlling semiconductor laser and is sent out
Laser light quality, intensity of illumination and the light application time penetrated；
Described power supply is connected with described laser controlling mechanism, to power described laser controlling mechanism.
Lasing source plant growing device the most according to claim 1, it is characterised in that described half
Conductor laser includes the semiconductor laser of emitting ultraviolet light, and its optical maser wavelength launched is 380nm；Send out
Penetrating the semiconductor laser of royal purple light, its optical maser wavelength launched is 405nm；The quasiconductor launching blue light swashs
Light device, its optical maser wavelength launched is 450nm；Launch the semiconductor laser of HONGGUANG, its laser launched
Wavelength is 660nm；Launching the semiconductor laser of far-red light, its optical maser wavelength launched is 730nm.
Lasing source plant growing device the most according to claim 2, it is characterised in that described sharp
Photocontrol mechanism includes controller U1, driver and laser pulse generation circuit；
Described controller U1 is connected with described driver signal, and described driver occurs electricity with described laser pulse
Road signal connects, and described laser pulse generation circuit is connected with described semiconductor laser circuit.
Lasing source plant growing device the most according to claim 3, it is characterised in that described red
Light is (4～10) with the light quality ratio of blue light: 1；The light quality ratio of described red and far-red light
For (2～8): 1.
Lasing source plant growing device the most according to claim 4, it is characterised in that also include
Intensity of illumination sensor, described intensity of illumination sensor is connected with described controller U1 signal.
Lasing source plant growing device the most according to claim 5, it is characterised in that described in receive
Rice coating reflection shield and nanometer light guide plate are square.
Lasing source plant growing device the most according to claim 6, it is characterised in that described in receive
Rice light guide plate is the arc of evagination.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106680206A (en) * | 2017-03-10 | 2017-05-17 | 杭州驭光科技有限公司 | Laser plant feature characteristic spectrum testing system and testing method thereof |
| CN108626601A (en) * | 2017-12-19 | 2018-10-09 | 嘉兴迪迈科技有限公司 | A kind of lasing source plant growing device |
| CN108617351A (en) * | 2017-12-15 | 2018-10-09 | 杭州彬康农业科技有限公司 | A kind of mobile laser illumination constant temperature plant incubator |
| WO2019071332A1 (en) * | 2017-07-08 | 2019-04-18 | Xiaolai Chen | User controllable grow lighting system, method, and online light settings store |
| CN116369083A (en) * | 2023-06-02 | 2023-07-04 | 浙江长芯光电科技有限公司 | Laser photovoltaic planting method |
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