CN106025031A - Electroluminescence principle based luminescent unit structure and display device - Google Patents
Electroluminescence principle based luminescent unit structure and display device Download PDFInfo
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- CN106025031A CN106025031A CN201610595306.5A CN201610595306A CN106025031A CN 106025031 A CN106025031 A CN 106025031A CN 201610595306 A CN201610595306 A CN 201610595306A CN 106025031 A CN106025031 A CN 106025031A
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- 238000000576 coating method Methods 0.000 claims description 31
- 238000004020 luminiscence type Methods 0.000 claims description 29
- 239000007769 metal material Substances 0.000 abstract description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- 229910052755 nonmetal Inorganic materials 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 238000007747 plating Methods 0.000 abstract 10
- 239000010410 layer Substances 0.000 description 59
- 239000000758 substrate Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
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- 230000005611 electricity Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
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- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- -1 Zn2SnO4 Chemical class 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
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- 229910017083 AlN Inorganic materials 0.000 description 1
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- 239000005132 Calcium sulfide based phosphorescent agent Substances 0.000 description 1
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- 229920000742 Cotton Polymers 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910003107 Zn2SnO4 Inorganic materials 0.000 description 1
- 229910007486 ZnGa2O4 Inorganic materials 0.000 description 1
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- 229910002113 barium titanate Inorganic materials 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
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- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
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- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
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- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
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- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses an electroluminescence principle based luminescent unit structure, which comprises a support core and is characterized in that the support core is provided with a conductor plating layer, the conductor plating layer is arranged at the external part of the support core in a sleeved manner, the external part of the conductor plating layer is provided with at least one luminescent material layer, the luminescent material layer and the conductor plating layer are provided with a medium inner layer therebetween, and the medium inner layer is attached to the luminescent material layer and the conductor plating layer. According to the invention, the electroluminescence principle based luminescent unit structure is further provided with the medium inner layer between the metal conductive plating layer and the luminescent material layer, the medium inner layer can adopts the non-isolated conductor plating layer and the luminescent material layer, the luminescent material layer is prevented from being contacted with the conductor plating layer, and an original metal core is replaced by adopting the non-metal support core, the outer surface of the support core is plated with a metal conductor plating layer, and electric conduction is carried out by using the metal conductor plating layer so as to enable a luminescent material to emit light, thereby being capable of greatly reducing the use proportion of metal materials, reducing consumption of the metal materials, and being also capable of playing a role of environmental protection.
Description
Technical field
The present invention relates to a kind of installation tool, more particularly, it relates to a kind of luminescence unit structure based on electroluminescent principle and display device.
Background technology
nullAt present，Flat-plate luminous display is as the tag wire equipment of information technology，It is widely used for mobile phone、Television set、Computer etc.，But existing is to there is following Railway Project:、Electrode、Electroluminescent material and various dielectric layer and auxiliary layer structure all use the stacked in parallel structure in flat panel substrate，Electric field centrality is poor，Luminosity and luminous efficiency are relatively low，The preparation of assorted Dot array structure needs to use mask evaporation or deposition，Or mask printing、Mask exposure、The complicated processing techniques such as mask etching，Successively stacking preparation is in flat panel substrate，Craft precision requires height、Difficulty is big，Equipment and production environment is caused to require height、Investment is big，And yields is low、High in cost of production shortcoming，Use luminous organic material，When using flexible plastic substrates，It is difficult to ensure that the air penetrability in full range and package quality，Material rapid degradation can be caused，The problem such as occur that the life-span is short and yields is low；When using air penetrability low and being prone to the glass substrate sealed, it is difficult to again realize flexibility, and existing flexible luminescent material uses metal-cored mostly, so needs to consume substantial amounts of metal, easily causes the environmental problems such as metallic pollution in manufacturing process.
Summary of the invention
It is an object of the invention to solve existing above-mentioned problem, it is provided that a kind of luminescence unit structure based on electroluminescent principle and display device.
For realizing object above, the technical scheme is that a kind of luminescence unit structure based on electroluminescent principle, including supporting-core, conductor coating is set on described supporting-core, described conductor coating is set in outside supporting-core, arranging at least one luminous material layer outside described conductor coating, arrange medium internal layer between described luminous material layer and conductor coating, described medium internal layer is all fitted with luminous material layer and conductor coating.Medium internal layer it is also provided with between metallic conduction coating and luminous material layer, medium internal layer can be with not insulated conductor coating and luminous material layer, prevent luminous material layer from contacting with conductor coating, and by nonmetal for the original metal-cored employing supporting-core made, it is that outer surface electroplates layer of metal conductor coating at supporting-core, metallic conductor coating is utilized to conduct electricity, make the luminescent material can be luminous, so can greatly reduce the use ratio of metal material, reduce the consumption of metal material, it is also possible to play environmental-protection function.
Optionally, arranging medium outer layer outside described luminous material layer, described medium outer layer jacket is located at outside luminous material layer.Medium outer layer sends out contacting of luminous material layer and other materials for isolation.
Optionally, diameter or the major diameter of described medium outer layer are 0.001mm ~ 10mm.
Optionally, the cross section of described supporting-core is circle, ellipse, triangle, tetragon, polygon or semicircle.
Optionally, the thickness of described luminous material layer is 1nm ~ 5000um.
Optionally, described luminescent material is electrodeless luminescent material, and described supporting-core uses nonmetallic materials.
A kind of display device utilizing above-mentioned luminescence unit structure to make, including data circuit, control circuit, scanning circuit and ray structure.
Optionally, described ray structure includes a support component, and a described support component arranges luminescence unit, and described luminescence unit is fixing with a support component to be connected.
Optionally, described data circuit electrically connects with luminescence unit.
Optionally, described scanning circuit arranging scan electrode, on the support component that described scan electrode is arranged, described control circuit all electrically connects with scanning circuit and data circuit.
The method have the advantages that between metallic conduction coating and luminous material layer, be also provided with medium internal layer, medium internal layer can be with not insulated conductor coating and luminous material layer, prevent luminous material layer from contacting with conductor coating, and by nonmetal for the original metal-cored employing supporting-core made, it is that outer surface electroplates layer of metal conductor coating at supporting-core, metallic conductor coating is utilized to conduct electricity, make the luminescent material can be luminous, so can greatly reduce the use ratio of metal material, reduce the consumption of metal material, it is also possible to play environmental-protection function.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of luminescence unit of the present invention；
Fig. 2 is a kind of structural representation of inventive display part；
Fig. 3 is the graph of relation of ray structure luminosity of the present invention, luminous efficiency, charge density and driving voltage.
1, supporting-core；2, conductor coating；3, medium outer layer；4, luminous material layer；5, medium internal layer；10, ray structure；100, support component is propped up；200, luminescence unit；300, data circuit；400, control circuit；500, scanning circuit；600, scan electrode.
Detailed description of the invention
Below in conjunction with specific embodiment, and combine accompanying drawing, technical scheme be further described:
nullEmbodiment: luminescence unit structure based on electroluminescent principle is (see accompanying drawing 1、3)，Including supporting-core 1，On described supporting-core 1, conductor coating 2 is set，It is outside that described conductor coating 2 is set in supporting-core 1，Described conductor coating 2 is outside arranges at least one luminous material layer 4，Between described luminous material layer 4 and conductor coating 2, medium internal layer 5 is set，Described medium internal layer 5 is all fitted with luminous material layer 4 and conductor coating 2，Described luminous material layer 4 is outside arranges medium outer layer 3，It is outside that described medium outer layer 3 is set in luminous material layer 4，Diameter or the major diameter of described medium outer layer are 0.001mm ~ 10mm，The cross section of described supporting-core is circular、Oval、Triangle、Tetragon、Polygon or semicircle，The thickness of described luminous material layer is 1nm ~ 5000um，Described luminescent material is electrodeless luminescent material，Described supporting-core uses nonmetallic materials.
Medium internal layer it is also provided with between metallic conduction coating and luminous material layer, medium internal layer can be with not insulated conductor coating and luminous material layer, prevent luminous material layer from contacting with conductor coating, and by nonmetal for the original metal-cored employing supporting-core made, it is that outer surface electroplates layer of metal conductor coating at supporting-core, metallic conductor coating is utilized to conduct electricity, make the luminescent material can be luminous, so can greatly reduce the use ratio of metal material, reduce the consumption of metal material, it is also possible to play environmental-protection function.
A kind of display device utilizing above-mentioned luminescence unit structure to make is (see accompanying drawing 2, 3), including data circuit 300, control circuit 400, scanning circuit 500 and ray structure 10, described ray structure 10 includes a support component 100, on a described support component 100, luminescence unit 200 is set, described luminescence unit 200 is fixing with a support component 100 to be connected, described data circuit 300 electrically connects with luminescence unit 200, on described scanning circuit 500, scan electrode 600 is set, on the support component 100 that described scan electrode 600 is arranged, described control circuit 400 all electrically connects with scanning circuit 500 and data circuit 300.
nullThe material of scan electrode is conductive metal material，Such as Au、Ag、Pt、Cu、Al、Fe、Cr、Ni、Ti etc.，Or the material of the scanning of materials electrode containing one or more conductor metals above-mentioned or its alloy be conductive metal material be non-metallic conducting material，Such as contain carbon、Graphite、CNT、Graphene etc.，Or containing such as In2O3、SnO2、ZnO、CdO、TiN、In2O3:Sn (ITO)、ZnO:In (IZO)、ZnO:Ga (GZO)、ZnO:Al (AZO)、SnO2:F、TiO2:Ta、In2O3-ZnO、CdIn2O4、Cd2SnO4、The radio frequency compounds such as Zn2SnO4，Or containing doped polyacetylene、Polyaniline (PAN)、Polythiophene (PTH)、Polypyrrole (PPy)、Conductive organic compound or the conducting polymers such as polyethylene dioxythiophene (PEDOT)，Or containing the compound of one or more conductive materials above-mentioned or mixing material.
nullThe thickness of luminous material layer is 1nm-5000um，The material of organic luminous material layer is inorganic electroluminescence material，Such as ZnS:Sm、ZnS:Tb、ZnS:Tm、SrS:Eu、CaGa2S4:Eu、ZnS:Mn、ZnS:Ho、CaS:Eu、SrGa2S4:Eu、SrS:Ce、CaS1-xSex:Eu、Ba2ZnS3:Mn、CaAl2S4:Eu、CaGa2S4:Ce、CaSr1-xSx:Eu、(Ca,Sr)Y2S4:Eu、CaS:Ce、SrGa2S4:Ce、ZnGa2O4:Eu、SrS:Ag、Cu、ZnS:Mn、CaS:Pb、BaAl2S4:Eu、SrS1-xSex:Ce、CaS:Bi、CaS:Cu,Ag or SrS:Cu etc.，Or a kind of material therein or the compound or mixing material of multiple material.
Each functional layer between scan electrode layer on described conductor filament and slim support substrate, therein one or more layers is sequentially prepared or is coated on slim support substrate.The thickness of auxiliary layer and secondary auxiliary layer is 10nm-5000um.The material of auxiliary layer and secondary auxiliary layer is dielectric substance, such as BaTiO3, Ta2O5, SiO2, Al2O3, TiO2, MgO, BeO, SiC, AlN, BN etc., or the compound or mixing material of a kind of material therein or multiple material.The material of auxiliary layer or secondary auxiliary layer is insulant, such as Si, glass, ceramic medium material, or cotton yarn, paper, fiber crops, artificial silk, polyester, polyimides, fluoropolymer, epoxy resin, organic siliconresin, phenolic resin, polyester, polybutadiene etc., or the compound or mixing material of a kind of material therein or multiple material.The material of auxiliary layer or secondary auxiliary layer includes for strengthening internal field or realizing electron multiplication purpose nano material, such as CNT, carbon nanocoils or other kinds of nanometer material structure.
The luminosity of the ray structure of the present invention, luminous efficiency, charge density are luminosity (cd/m2) curve with the graph of relation wherein a curve of driving voltage, b curve is luminous efficiency (lm/w) curve, and c curve is charge density (μ c/cm2) curve.Only when voltage has exceeded more than certain threshold value Vth, luminescent material just can luminescence.Along with the rising of driving voltage, luminosity can raise rapidly and the most saturated.Vertically disposed luminous filament and transversely arranged scan electrode have intersected to form matrix structure.When the driving voltage being applied at joint on luminescent material by the data electrode in luminous filament and the scan electrode on slim support substrate respectively exceedes threshold voltage, this point can send the light of certain brightness.Therefore, coordinated by the driving signal on control circuit modulation data electrode and scan electrode, can form the matrix-scanning to Dot array, and be further combined to be formed and there is the image of certain tonal gradation show.Herein, front and back two electrodes it may be that directly intersect constitute passive-matrix structure, it is also possible to be the use of the active matrix configuration of TFT.
Above-mentioned detailed description of the invention is used for illustrating the present invention rather than limiting the invention, in the protection domain of spirit and claims of the present invention, and any modifications and changes that the present invention is made, both fall within protection scope of the present invention.
Claims (10)
1. a luminescence unit structure based on electroluminescent principle, it is characterized in that, including supporting-core, conductor coating is set on described supporting-core, described conductor coating is set in outside supporting-core, arranging at least one luminous material layer outside described conductor coating, arrange medium internal layer between described luminous material layer and conductor coating, described medium internal layer is all fitted with luminous material layer and conductor coating.
Luminescence unit structure based on electroluminescent principle the most according to claim 1, is characterized in that, arranges medium outer layer outside described luminous material layer, and described medium outer layer jacket is located at outside luminous material layer.
Luminescence unit structure based on electroluminescent principle the most according to claim 2, is characterized in that, diameter or the major diameter of described medium outer layer are 0.001mm ~ 10mm.
Luminescence unit structure based on electroluminescent principle the most according to claim 1, is characterized in that, the cross section of described supporting-core is circle, ellipse, triangle, tetragon, polygon or semicircle.
Luminescence unit structure based on electroluminescent principle the most according to claim 1, is characterized in that, the thickness of described luminous material layer is 1nm ~ 5000um.
Luminescence unit structure based on electroluminescent principle the most according to claim 1, is characterized in that, described luminescent material is electrodeless luminescent material, and described supporting-core uses nonmetallic materials.
7. the display device utilizing above-mentioned luminescence unit structure to make, is characterized in that, including data circuit, control circuit, scanning circuit and ray structure.
The display device that luminescence unit structure the most according to claim 7 is made, is characterized in that, described ray structure includes a support component, and a described support component arranges luminescence unit, and described luminescence unit is fixing with a support component to be connected.
The display device that luminescence unit structure the most according to claim 8 is made, is characterized in that, described data circuit electrically connects with luminescence unit.
The display device that luminescence unit structure the most according to claim 8 is made, it is characterized in that, arranging scan electrode on described scanning circuit, on the support component that described scan electrode is arranged, described control circuit all electrically connects with scanning circuit and data circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610595306.5A CN106025031A (en) | 2016-07-27 | 2016-07-27 | Electroluminescence principle based luminescent unit structure and display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610595306.5A CN106025031A (en) | 2016-07-27 | 2016-07-27 | Electroluminescence principle based luminescent unit structure and display device |
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| CN106025031A true CN106025031A (en) | 2016-10-12 |
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| CN201610595306.5A Pending CN106025031A (en) | 2016-07-27 | 2016-07-27 | Electroluminescence principle based luminescent unit structure and display device |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1364395A (en) * | 1999-07-28 | 2002-08-14 | 科克瑞尔桑伯瑞检索和开发集团 | Electroluminescent device and method for production thereof |
| US20030099858A1 (en) * | 2001-11-27 | 2003-05-29 | General Electric Company One Research Circle | Environmentally-stable organic electroluminescent fibers |
| US20110148286A1 (en) * | 2008-09-01 | 2011-06-23 | Kyonggi University Industry & Academia Cooperation Foundation | Inorganic light-emitting device |
| CN103260284A (en) * | 2013-05-12 | 2013-08-21 | 上海科润光电技术有限公司 | High-frequency electric field inducing El wire |
| CN103296048A (en) * | 2013-05-22 | 2013-09-11 | 李尚霖 | Electroluminescence principle based luminescent structure and display device |
| CN104183728A (en) * | 2013-05-23 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic electroluminescent apparatus |
-
2016
- 2016-07-27 CN CN201610595306.5A patent/CN106025031A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1364395A (en) * | 1999-07-28 | 2002-08-14 | 科克瑞尔桑伯瑞检索和开发集团 | Electroluminescent device and method for production thereof |
| US20030099858A1 (en) * | 2001-11-27 | 2003-05-29 | General Electric Company One Research Circle | Environmentally-stable organic electroluminescent fibers |
| US20110148286A1 (en) * | 2008-09-01 | 2011-06-23 | Kyonggi University Industry & Academia Cooperation Foundation | Inorganic light-emitting device |
| CN103260284A (en) * | 2013-05-12 | 2013-08-21 | 上海科润光电技术有限公司 | High-frequency electric field inducing El wire |
| CN103296048A (en) * | 2013-05-22 | 2013-09-11 | 李尚霖 | Electroluminescence principle based luminescent structure and display device |
| CN104183728A (en) * | 2013-05-23 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic electroluminescent apparatus |
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Application publication date: 20161012 |