CN106025007A - Deep ultraviolet light emitting diode chip structure and manufacturing method thereof - Google Patents
Deep ultraviolet light emitting diode chip structure and manufacturing method thereof Download PDFInfo
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- CN106025007A CN106025007A CN201610557362.XA CN201610557362A CN106025007A CN 106025007 A CN106025007 A CN 106025007A CN 201610557362 A CN201610557362 A CN 201610557362A CN 106025007 A CN106025007 A CN 106025007A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000002955 isolation Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 15
- 238000000137 annealing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- -1 AlGaN Chemical class 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a deep ultraviolet light emitting diode chip structure. A first type expansion electrode connected with a first electrode is arranged around a chip, the first type expansion electrode and the first electrode are arranged above a first type ohmic contact layer, and through an electrode isolation layer, connection between the first electrode and the first type expansion electrode and an epitaxial structure is isolated; and the first type ohmic contact layer is arranged above a first type conductive layer, and through the electrode isolation layer, connection between the first type ohmic contact layer and the epitaxial structure is isolated. The invention also discloses a method of manufacturing the deep ultraviolet light emitting diode chip structure. Thus, the working voltage of the deep ultraviolet light emitting diode can be effectively reduced, and the internal quantum efficiency is improved.
Description
Technical field
The present invention relates to LED technology field, refer in particular to chip structure of a kind of deep-UV light-emitting diode and preparation method thereof.
Background technology
Along with the fast development of LED technology, deep-UV light-emitting diode becomes another big hot topic of light emitting diode development.Deep-UV light-emitting diode has major application in fields such as illumination, sterilization, medical treatment, printing, biochemistry detection, the storage of highdensity information and secure communications and is worth.Deep ultraviolet wave-length coverage is between 100-280 nanometer, and using AlGaN material is the optimum selection realizing deep ultraviolet LED component product when active area materials.
In deep-UV light-emitting diode technology evolution, owing to deep-UV light-emitting diode is mainly made up of III-V compounds such as AlGaN, AlN, it is thus achieved that the preferably epitaxial growth of crystal mass has bigger difficulty.Therefore, the research initial stage is concentrated mainly on epitaxial material growth technical study.Being developed so far, epitaxial material growth can prepare the III-V compounds such as crystal mass preferable AlGaN, AlN.But find that in deep ultraviolet epitaxial process the incorporation efficiency of not only p-type doping is low, the incorporation efficiency of n-type doping is the highest, owing to deep ultraviolet LED component uses same lateral electrode, so N-type current expansion effect is the most undesirable, causes the running voltage of deep-UV light-emitting diode higher and internal quantum efficiency is low.
In order to solve the problems referred to above, improving the N-type extension effect of light emitting diode, improve deep-UV light-emitting diode efficiency and reduce running voltage, this case thus produces.
Summary of the invention
It is an object of the invention to provide chip structure of a kind of deep-UV light-emitting diode and preparation method thereof, main by arranging the first type expansion electrode at chip circumference, and the first type ohmic contact layer of the GaN material that a floor height is mixed is set under the first type expansion electrode and the first type electrode, the first type conductive layer that first type ohmic contact layer and following AlGaN material are constituted forms interfacial effect, improves the current expansion effect of expansion electrode；Effectively reduce the running voltage of deep-UV light-emitting diode, and improve internal quantum efficiency.
For reaching above-mentioned purpose, the solution of the present invention is:
A kind of chip structure of deep-UV light-emitting diode, the the first type expansion electrode being connected with the first electrode is set at chip circumference, first type expansion electrode and the first electrode are arranged on the first type ohmic contact layer, are isolated the connection of the first electrode, the first type expansion electrode and epitaxial structure by electrode isolation layers；First type Ohmic contact is placed on the first type conductive layer, and is isolated the connection of the first type ohmic contact layer and epitaxial structure by electrode isolation layers.
Further, described first type ohmic contact layer uses GaN material.Use GaN material can form current blocking effect on interface with the first type conductive layer n-AlGaN of alumina-bearing material, be conducive to strengthening the current expansion effect of the first type expansion electrode.
Further, described first type ohmic contact layer uses highly doped.Highly doped GaN material is used easily to form Ohmic contact with the first type expansion electrode and with the first electrode.
Further, described electrode isolation layers uses AlN material.Using AlN material both to protect primary epitaxial material for the GaN material that follow-up secondary epitaxy height is mixed, that avoids again electrode isolation layers decomposes the pollution to reaction chamber.
The chip structure manufacture method of a kind of UV LED, comprises the following steps:
One, one epitaxial substrate is provided, uses MOCVD to sequentially form cushion, the first type conductive layer, active layer, electronic barrier layer, Second-Type limiting layer, Second-Type conductive layer in epitaxial substrate；
Two, on the Second-Type conductive layer of epitaxial surface, use mask, be lithographically formed the first electrode and expansion electrode making region；
Three, use ICP to etch the first electrode and expansion electrode makes region, the interior thickness position of the degree of depth to the first type conductive layer；
Four, process clean epitaxial wafer, then be placed in PVD evaporation, form AlN electrode isolation layers in Second-Type conductive layer, epitaxial layer side；
Five, epitaxial wafer is placed in MOCVD secondary epitaxy growth nn-GaN material again and forms the first type ohmic contact layer in the first electrode and expansion electrode making region；
Six, use mask lithography and the ICP etching technique of band element detection, remove the AlN material on Second-Type conductive layer and nn-GaN, expose Second-Type conductive layer；
Seven, on Second-Type conductive layer, transparent conductive layer is formed；
Eight, on transparent conductive layer, the second electrode is formed at the same time；The first type ohmic contact layer in the first electrode fabrication region forms the first electrode；The first type ohmic contact layer that expansion electrode makes region forms expansion electrode.
The present invention uses GaN material, N-shaped doping can be readily available high-dopant concentration in the deep-UV light-emitting diode of the high AlGaN system of Al content.Avoid the poor crystal quality that in conventional structure, N-shaped ohmic contact layer n-AlGaN reaches Ohmic contact and cause to obtain height to mix.Thus cause the non-radiative recombination of luminous zone seriously, be conducive to increasing the combined efficiency of active area.Design the first type expansion electrode at chip circumference and be connected with the first electrode, bottom contacts with the first type ohmic contact layer, and first type ohmic contact layer GaN bottom surface contact with the first type conductive layer n-AlGaN, use the design of this structure to make the electric current of n-electrode effectively to spread, spread owing to the GaN material interfacial effect caused different from n-AlGaN material impedance makes electric current be easier in the whole face of nn-GaN material layer.
Due to deep ultraviolet properties of materials, the high annealing (700-800 DEG C) of p-type doping uses conventional constant temperature annealing, doped source is difficult to be totally disrupted with the H key in the complex of H, but by high annealing repeatedly, lower the temperature, annealing of lower the temperature, the annealing temperature pulse of intensification, the H key that can increase in the complex to remaining doped source and H destroys dynamics again, and introducing low temperature annealing process, improve the activation efficiency of p-type.
Accompanying drawing explanation
Fig. 1 is the front view of the present invention；
Fig. 2 is the top view of the present invention；
Fig. 3 Making programme of the present invention figure one；
Fig. 4 Making programme of the present invention figure two；
Fig. 5 Making programme of the present invention figure three；
Fig. 6 Making programme of the present invention figure four.
Label declaration
Substrate 1 cushion 2
Epitaxial structure 3 first type conductive layer 31
Active area 32 electronic barrier layer 33
Second-Type limiting layer 34 Second-Type conductive layer 35
Sealing coat 4 first type ohmic contact layer 5
Second electrode 6 first electrode 7
Expansion electrode 8.
Detailed description of the invention
Below in conjunction with drawings and the specific embodiments, the present invention is described in detail.
Refer to described in Fig. 1 and Fig. 2, the chip structure of a kind of deep-UV light-emitting diode that the present invention discloses, the the first type expansion electrode 8 being connected with the first electrode 7 is set at chip circumference, first type expansion electrode 8 and the first electrode 7 are arranged on the first type ohmic contact layer 5, are isolated the connection of first electrode the 7, first type expansion electrode 8 and epitaxial structure 3 by electrode isolation layers 4；First type ohmic contact layer 5 is placed on the first type conductive layer 31, and is isolated the connection of the first type ohmic contact layer 5 and epitaxial structure 3 by electrode isolation layers 4.
Described first type ohmic contact layer 5 uses GaN material.Described first type ohmic contact layer 5 uses highly doped.Described electrode isolation layers 4 uses AlN material.
Particularly as follows: form cushion 2(AlN on substrate 1), epitaxial structure 3 is formed on cushion 2, in the present embodiment, epitaxial structure 3 includes the first type conductive layer 31(n-AlGaN), active area 32, electronic barrier layer 33(p-AlGaN), Second-Type limiting layer 34(p-AlGaN) and Second-Type conductive layer 35(p-AlGaN), first type conductive layer 31 is formed on the buffer layer 2, first type conductive layer 31 is formed with source region 32, active area 32 is formed electronic barrier layer 33, electronic barrier layer 33 is formed Second-Type limiting layer 34, Second-Type limiting layer 34 is formed Second-Type conductive layer 35.
Second electrode 6 is set on Second-Type conductive layer 35, epitaxial structure 3 periphery arranges the first type ohmic contact layer 6(nn-GaN), first type ohmic contact layer 6 contacts with the first type conductive layer 31 of epitaxial structure 3, arranging the first electrode 7 and the first type expansion electrode 8 being connected with the first electrode 7 on first type ohmic contact layer 6, the first type expansion electrode 8 surrounds epitaxial structure 3.Between first type ohmic contact layer 6 and epitaxial structure 3, between the first electrode 7 and epitaxial structure 3 and between the first type expansion electrode 8 and epitaxial structure 3, sealing coat 4(AlN is set).
Invention additionally discloses the chip structure manufacture method of a kind of UV LED, comprise the following steps:
One, as shown in Figure 3, one epitaxial substrate 1 is provided, uses MOCVD to sequentially form cushion the 2, first type conductive layer 31(n-AlGaN in epitaxial substrate 1), active layer 32, electronic barrier layer 33(p-AlGaN), Second-Type limiting layer 34 and Second-Type conductive layer 35；First type conductive layer 31, active area 32, electronic barrier layer 33, Second-Type limiting layer 34 and Second-Type conductive layer 35 constitute epitaxial structure 3.
Two, as shown in Figure 4, the Second-Type conductive layer 35 on epitaxial structure 3 surface uses mask, be lithographically formed the first electrode and expansion electrode making region.
Three, use ICP to etch the first electrode and expansion electrode makes region, the interior thickness position of the degree of depth to the first type conductive layer 31.
Four as it is shown in figure 5, process clean epitaxial wafer, then is placed in PVD evaporation, forms AlN electrode isolation layers 4 in Second-Type conductive layer 35, epitaxial layer side.
Five, epitaxial wafer is placed in MOCVD secondary epitaxy growth nn-GaN material again and forms the first type ohmic contact layer 5 in the first electrode and expansion electrode making region.
Six, use mask lithography and the ICP etching technique of band element detection, remove the AlN material on Second-Type conductive layer 35 and nn-GaN, expose Second-Type conductive layer 35.
Seven, on Second-Type conductive layer 35, transparent conductive layer is formed.
Eight, on transparent conductive layer, the second electrode 6 is formed at the same time；The first type ohmic contact layer 5 in the first electrode fabrication region is formed the first electrode 7；The first type ohmic contact layer 5 that expansion electrode makes region forms expansion electrode 8.
The present invention designs the first type ohmic contact layer nn-GaN by secondary epitaxy at conventional epitaxial structure and is placed under the first electrode and the first type expansion electrode；By using AlN electrode isolation layers to isolate the connection of the first type ohmic contact layer nn-GaN and epitaxial structure.Designing a circle first type expansion electrode around epitaxial structure and be connected with the first electrode, electrode is arranged on the first type ohmic contact layer nn-GaN, and by using AlN electrode isolation layers to isolate the connection of the first electrode and the first type expansion electrode and epitaxial structure.
The foregoing is only the preferred embodiments of the present invention, not the restriction to this case design, all equivalent variations done according to the design key of this case, each fall within the protection domain of this case.
Claims (4)
1. the chip structure of a deep-UV light-emitting diode, it is characterized in that: the first type expansion electrode being connected with the first electrode is set at chip circumference, first type expansion electrode and the first electrode are arranged on the first type ohmic contact layer, are isolated the connection of the first electrode, the first type expansion electrode and epitaxial structure by electrode isolation layers；First type Ohmic contact is placed on the first type conductive layer, and is isolated the connection of the first type ohmic contact layer and epitaxial structure by electrode isolation layers.
2. a kind of UV LED as claimed in claim 1, it is characterised in that: described first type ohmic contact layer uses GaN material.
3. a kind of UV LED as claimed in claim 1, it is characterised in that: further, described electrode isolation layers uses AlN material.
4. the chip structure manufacture method of a UV LED, it is characterised in that: comprise the following steps:
One, one epitaxial substrate is provided, uses MOCVD to sequentially form cushion, the first type conductive layer, active layer, electronic barrier layer, Second-Type limiting layer and Second-Type conductive layer in epitaxial substrate；
Two, on the Second-Type conductive layer of epitaxial surface, use mask, be lithographically formed the first electrode and expansion electrode making region；
Three, use ICP to etch the first electrode and expansion electrode makes region, the interior thickness position of the degree of depth to the first type conductive layer；
Four, process clean epitaxial wafer, then be placed in PVD evaporation, form AlN electrode isolation layers in Second-Type conductive layer, epitaxial layer side；
Five, epitaxial wafer is placed in MOCVD secondary epitaxy growth nn-GaN material again and forms the first type ohmic contact layer in the first electrode and expansion electrode making region；
Six, mask lithography is used, and the ICP etching technique of band element detection, remove the AlN material on Second-Type conductive layer and nn-GaN, expose Second-Type conductive layer；
Seven, on Second-Type conductive layer, transparent conductive layer is formed；
Eight, on transparent conductive layer, the second electrode is formed at the same time；The first type ohmic contact layer in the first electrode fabrication region forms the first electrode；The first type ohmic contact layer that expansion electrode makes region forms expansion electrode.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610557362.XA CN106025007B (en) | 2016-07-15 | 2016-07-15 | A kind of chip structure of deep-UV light-emitting diode and preparation method thereof |
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| CN201610557362.XA CN106025007B (en) | 2016-07-15 | 2016-07-15 | A kind of chip structure of deep-UV light-emitting diode and preparation method thereof |
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| CN106025007B CN106025007B (en) | 2018-03-13 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265534A (en) * | 2019-06-20 | 2019-09-20 | 合肥彩虹蓝光科技有限公司 | A kind of semiconductor structure |
| CN110265515A (en) * | 2019-06-20 | 2019-09-20 | 合肥彩虹蓝光科技有限公司 | A kind of light-emitting diode chip for backlight unit and its manufacturing method |
| CN112713227A (en) * | 2020-12-25 | 2021-04-27 | 至芯半导体(杭州)有限公司 | Method for improving light extraction efficiency of TM (transverse magnetic) mode of ultraviolet AlInGaN light-emitting diode |
| WO2021226867A1 (en) * | 2020-05-13 | 2021-11-18 | 苏州晶湛半导体有限公司 | Ultraviolet led and fabricating method therefor |
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| US9293648B1 (en) * | 2015-04-15 | 2016-03-22 | Bolb Inc. | Light emitter with a conductive transparent p-type layer structure |
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| CN110265515A (en) * | 2019-06-20 | 2019-09-20 | 合肥彩虹蓝光科技有限公司 | A kind of light-emitting diode chip for backlight unit and its manufacturing method |
| WO2021226867A1 (en) * | 2020-05-13 | 2021-11-18 | 苏州晶湛半导体有限公司 | Ultraviolet led and fabricating method therefor |
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| CN112713227A (en) * | 2020-12-25 | 2021-04-27 | 至芯半导体(杭州)有限公司 | Method for improving light extraction efficiency of TM (transverse magnetic) mode of ultraviolet AlInGaN light-emitting diode |
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| CN106025007B (en) | 2018-03-13 |
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