CN106024999A - Quantum dot surface purification method for improving luminous efficiency of perovskite LED - Google Patents
Quantum dot surface purification method for improving luminous efficiency of perovskite LED Download PDFInfo
- Publication number
- CN106024999A CN106024999A CN201610365441.0A CN201610365441A CN106024999A CN 106024999 A CN106024999 A CN 106024999A CN 201610365441 A CN201610365441 A CN 201610365441A CN 106024999 A CN106024999 A CN 106024999A
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- purification
- organic solvent
- luminous efficiency
- dot surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 44
- 238000000746 purification Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000003960 organic solvent Substances 0.000 claims abstract description 15
- 239000000243 solution Substances 0.000 claims abstract description 14
- 239000002904 solvent Substances 0.000 claims abstract description 12
- 238000002347 injection Methods 0.000 claims abstract description 7
- 239000007924 injection Substances 0.000 claims abstract description 7
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 30
- 238000001556 precipitation Methods 0.000 claims description 16
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 4
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 4
- 150000002576 ketones Chemical class 0.000 claims 1
- 238000005424 photoluminescence Methods 0.000 abstract description 6
- 238000006862 quantum yield reaction Methods 0.000 abstract description 6
- 239000013049 sediment Substances 0.000 abstract description 5
- 239000003446 ligand Substances 0.000 abstract description 4
- 238000012216 screening Methods 0.000 abstract 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- -1 Cesium Lead Halide Chemical class 0.000 description 5
- 229910052792 caesium Inorganic materials 0.000 description 5
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 239000011259 mixed solution Substances 0.000 description 4
- 239000002159 nanocrystal Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000011550 stock solution Substances 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920003936 perfluorinated ionomer Polymers 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a quantum dot surface purification method for improving the luminous efficiency of a perovskite LED. The method comprises the steps of: (1) adding a flocculant to a CsPbX3 quantum dot solution, carrying out centrifuging and then taking sediments; (2) dispersing the sediments into an organic solvent, adding a purification solvent, carrying out centrifuging again and taking the sediments; and (3) dispersing the sediments obtained in the step (2) into the organic solvent again and obtaining purified CsPbX3 quantum dots. Surface purification is carried out on the perovskite quantum dots by screening different solvents and cycle indexes; the number of ligands on the surfaces of the quantum dots is reduced; and the charge injection rate can be improved while the photoluminescence quantum yield is ensured, so that an QLED with high luminous efficiency is obtained; the photoluminescence quantum yield of the purified QLED is kept over 90%; and the external quantum efficiency is improved to 3.2% from 0.9%.
Description
Technical field
The present invention relates to a kind of quantum dot surface method of purification improving perovskite LED luminous efficiency, belong to materials synthesis neck
Territory.
Background technology
Nearly 2 years, perovskite material was owing to carrier mobility is high, glow color is pure, photoelectric transformation efficiency is high and has relatively
The advantages such as strong room temperature photoluminescence characteristic, obtain fast development at photoelectric field.The EQE of hybrid inorganic-organic perovskite LED
8.53% is brought up to from 0.76%, it is seen that perovskite material is in the great potential in display field in 1 year, but its poor stability
Problem become the obstruction of its application development.Relative to hybrid inorganic-organic perovskite, full-inorganic perovskite material has higher
Stability, it will have bigger using value at optoelectronic areas.But the EQE of the full-inorganic perovskite LED of report at present
Still at a relatively low level (Zhang, X., Lin, H., Huang, H., et al. Enhancing the
Brightness of Cesium Lead Halide Perovskite Nanocrystal Based Green Light-
Emitting Devices through the Interface Engineering with Perfluorinated
Ionomer. Nano Lett. 16,1415-1420 (2016)), (Li, G., Rivarola, F. W. R., Davis,
N. J. L. K., et al. Highly Efficient Perovskite Nanocrystal Light-Emitting
Diodes Enabled by a Universal Crosslinking Method. Adv. Mater., DOI: 10.1002/
Adma.201600064 (2016)), so the efficiency improving full-inorganic perovskite LED is extremely urgent.
Although the surface ligand of perovskite quantum dot can reduce surface defect, improve photoluminescence quantum yield, but also can
Form a layer insulating and prevent the injection of electric charge.The surface state of perovskite quantum dot processes an always difficult problem, has been reported that
(Li G, Rivarola F W R, Davis N J L K, et al. Highly Efficient Perovskite
Nanocrystal Light‐Emitting Diodes Enabled by a Universal Crosslinking Method
[J]. Advanced Materials, 2016.) introduce aluminum source on quantum dot film surface, by the way of ALD, make quantum
Point surface ligand forms the structure being cross-linked with each other by Al, but film surface is simply processed by this, it is impossible to improve well
Device performance, and operation complexity.
Summary of the invention
It is an object of the invention to provide a kind of surface method of purification and improve the apparent condition of perovskite quantum dot, thus improve
The luminous efficiency of perovskite quantum dot LED.
The present invention is achieved through the following technical solutions:
A kind of quantum dot surface method of purification improving perovskite LED luminous efficiency, its step is as follows:
1) to CsPbX3Quantum dot solution adds flocculant, after being centrifuged, takes precipitation；
2) precipitation is disperseed in organic solvent, add purification solvent, recentrifuge, take precipitation；
3) by step 2) in the precipitation that obtains be dispersed again in organic solvent, the CsPbX after being purified3Quantum dot.
Further, in step 1), described CsPbX3Quantum dot solution is prepared by high-temperature hot injection method.
Further, in step 1), described flocculant is in acetone, isopropanol, n-butyl alcohol, the tert-butyl alcohol or ethyl acetate
Any one, flocculant and CsPbX3The volume ratio of quantum dot solution is 1:1 ~ 10:1.
Further, step 2) and step 3) in, described organic solvent is any one in normal hexane, normal octane, toluene
Kind, precipitation concentration in organic solvent is 0.05 ~ 0.2mol/L.
Further, step 2) in, described purification solvent is ethyl acetate, organic solvent and the volume ratio purifying solvent
For 1:1 ~ 1:10.
Compared with prior art, the invention have the advantage that
1) the invention provides a kind of simple perovskite quantum dot surface processing method, the surface still chi of quantum dot after purification
Very little homogeneous, good crystallinity；
2) The present invention reduces the amount of ligand of quantum dot surface, energy while ensureing photoluminescence quantum yield (PL QY)
Enough improving electric charge injection rate, the luminous efficiency of perovskite quantum dot LED after purification is significantly improved, and EQE improves from 0.12%
To 3%.
Accompanying drawing explanation
Fig. 1 is the EQE figure of quantum dot LED corresponding to embodiment 1-3.
Fig. 2 is respectively the TEM figure of embodiment 1,4,5,6 correspondence.
Detailed description of the invention
Below by way of specific embodiment, the invention will be further described.
The quantum dot surface method of purification of raising perovskite LED luminous efficiency of the present invention, its step is as follows:
1) caesium precursor salt is dissolved in octadecylene with the concentration of 0.1 ~ 0.3mol/L, and heated and stirred makes it complete
Dissolve, be made into caesium precursor solution；
2) by PbX2Mixing with surfactant, octadecylene, under inert atmosphere, at 120 ~ 140 DEG C, heated and stirred is dissolved and is obtained
Mixed solution；
3) be continuously heating to 140～180 DEG C, caesium precursor solution be rapidly injected step 2) mixed solution in, react 5-
After 10s, rapid ice bath is to room temperature, obtains 0.01-0.3mol/lCsPbX3Quantum dot solution；
4) to CsPbX3Quantum dot solution adds flocculant, after being centrifuged, takes precipitation；
5) precipitation in step 4) is disperseed in organic solvent, add purification solvent, recentrifuge, take precipitation；
6) precipitation obtained in step 5) is dispersed again in organic solvent, the CsPbX after being purified3Quantum dot.
Embodiment 1
1) Cs (st) taking 2.5g is dissolved in the octadecylene of 40mL, and heated and stirred makes it be completely dissolved, and is made into caesium precursor solution；
2) by the PbBr of 0.198g2It is dissolved in the mixed solution of 1.5mL oleic acid, 1mL oleyl amine and 15mL octadecylene, repeatedly takes out
Gas-applying argon gas, circulates 10min, drains oxygen and water, it is ensured that reaction system is inert atmosphere protection；
3) heated and stirred at 120 DEG C, after continuous heating 10min question response thing fully dissolves, is warming up to 170 DEG C；
4) taking the caesium precursor solution in 0.55g step 1), be rapidly injected in mixed solution, after reaction 5s, rapid ice bath is to room
Temperature, obtains CsPbBr3 quantum dot stock solution；
5) at CsPbX3Quantum dot stock solution adds 20mL acetone and 20mL ethyl acetate, outwells after 10000rpm/1min is centrifugal
Supernatant, takes precipitation；
6) by resolution of precipitate in 4mL normal hexane, adding the ethyl acetate of 20mL, it is heavy to take after 10000rpm/1min is centrifugal
Form sediment；
7) by the resolution of precipitate in step 6) in 4mL normal octane, CsPbBr3 amount after purification is i.e. obtained
Sub-point.
Embodiment 2
Using embodiment 1 same process, difference is, does not operate the step 6) in embodiment 1, the precipitation that will obtain in step 5)
Straight knot operating procedure 7), other conditions keep consistent.
Embodiment 3
Using embodiment 1 same process, difference is, repetitive operation step 6) before step 7) in embodiment 1, other conditions
Keep consistent.
Embodiment 4
Using embodiment 1 same process, difference is, changes the ethyl acetate in the step 6) in embodiment 1 into isopropanol, its
His condition keeps consistent.
Embodiment 5
Using embodiment 1 same process, difference is, changes the ethyl acetate in the step 6) in embodiment 1 into the tert-butyl alcohol, its
His condition keeps consistent.
Embodiment 6
Using embodiment 1 same process, difference is, changes the ethyl acetate in the step 6) in embodiment 1 into acetone, other
Condition keeps consistent.
By regulating different purification solvent and purification cycle number of times, perovskite quantum dot surface is purified process,
Its electric charge injection rate is improved in the case of not affecting its photoluminescence quantum yield.Purification is for twice most preferably to follow as can be seen from Figure 1
Ring number of times, there is more part formation electric charge barrier layer and hinder the injection of electric charge in the quantum dot surface of a purification, thus
Reduce the luminous efficiency of LED, but purification number of times be too much so that the defect of quantum dot surface increases so that quantum dot easily deposits,
Affect its luminous efficiency and quantum yield.Such as Fig. 2, by regulating different purification solvent it can be seen that weak polar solvent just oneself
Alkane is optimum with the purification for quantum dot that mixes of purification solvent ethyl acetate.
Claims (6)
1. the quantum dot surface method of purification improving perovskite LED luminous efficiency, it is characterised in that its step is as follows:
1) to CsPbX3Quantum dot solution adds flocculant, after being centrifuged, takes precipitation；
2) precipitation is disperseed in organic solvent, add purification solvent, recentrifuge, take precipitation；
3) by step 2) in the precipitation that obtains be dispersed again in organic solvent, the CsPbX after being purified3Quantum dot.
2. quantum dot surface method of purification as claimed in claim 1, it is characterised in that in step 1), described CsPbX3Quantum dot
Solution is prepared by high-temperature hot injection method.
3. quantum dot surface method of purification as claimed in claim 1, it is characterised in that in step 1), described flocculant is third
In ketone, isopropanol, n-butyl alcohol, the tert-butyl alcohol or ethyl acetate any one, flocculant and CsPbX3The volume ratio of quantum dot solution
For 1:1 ~ 10:1.
4. quantum dot surface method of purification as claimed in claim 1, it is characterised in that step 2) in, described organic solvent is
In normal hexane, normal octane, toluene any one, precipitation concentration in organic solvent is 0.05 ~ 0.2mol/L.
5. quantum dot surface method of purification as claimed in claim 1, it is characterised in that in step 3), described organic solvent is
In normal hexane, normal octane, toluene any one.
6. quantum dot surface method of purification as claimed in claim 1, it is characterised in that step 2) in, described purification solvent is
Ethyl acetate, organic solvent is 1:1 ~ 1:10 with the volume ratio of purification solvent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610365441.0A CN106024999B (en) | 2016-05-27 | 2016-05-27 | A kind of quantum dot surface method of purification improving perovskite LED luminous efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610365441.0A CN106024999B (en) | 2016-05-27 | 2016-05-27 | A kind of quantum dot surface method of purification improving perovskite LED luminous efficiency |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106024999A true CN106024999A (en) | 2016-10-12 |
| CN106024999B CN106024999B (en) | 2019-05-07 |
Family
ID=57091137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610365441.0A Active CN106024999B (en) | 2016-05-27 | 2016-05-27 | A kind of quantum dot surface method of purification improving perovskite LED luminous efficiency |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106024999B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784391A (en) * | 2016-12-06 | 2017-05-31 | 广东昭信光电科技有限公司 | Quantum dot light emitting device and preparation method thereof, liquid crystal display device |
| CN107195741A (en) * | 2017-04-06 | 2017-09-22 | 南京理工大学 | A kind of full-inorganic quantum dot backlight LED preparation method |
| CN107658385A (en) * | 2017-02-23 | 2018-02-02 | 广东聚华印刷显示技术有限公司 | quantum dot film and preparation method thereof |
| CN109932379A (en) * | 2017-12-15 | 2019-06-25 | Tcl集团股份有限公司 | The measuring method and quantum dot ink formulation method of quantum dot surface ligand content |
| CN110144208A (en) * | 2019-05-15 | 2019-08-20 | 南京理工大学 | Improve APbI3The method of perovskite quantum point efficiency |
| CN110157408A (en) * | 2019-05-17 | 2019-08-23 | 南京理工大学 | The method that equivalent ligand synthesizing efficient stablizes full-inorganic halogen perovskite quantum dot scintillator |
| CN111517364A (en) * | 2020-04-27 | 2020-08-11 | 电子科技大学 | Stable silicon-coated pure phase CsPb2Br5Preparation method of inorganic nanocrystalline |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101319138A (en) * | 2008-07-10 | 2008-12-10 | 上海交通大学 | Production method for CdS and CdS/ZnS core-shell type quantum point |
| CN101319140A (en) * | 2008-07-10 | 2008-12-10 | 上海交通大学 | Production method for CdSeTe/CdS/ZnS core-shell type quantum point |
| CN101428770A (en) * | 2008-12-08 | 2009-05-13 | 云南大学 | Synthesis of ZnSe fluorescent quantum point |
| CN103555334A (en) * | 2013-10-21 | 2014-02-05 | 山东交通学院 | Preparation method and application of CdTe/ZnS core-shell quantum dots |
| CN104388089A (en) * | 2014-11-04 | 2015-03-04 | 北京理工大学 | High-fluorescence-quantum-yield hybridized perovskite quantum dot material and preparation method thereof |
| CN105206718A (en) * | 2015-09-25 | 2015-12-30 | 南京理工大学 | CsPbX3 inorganic perovskite quantum dot light-emitting diode (LED) prepared through solution method |
-
2016
- 2016-05-27 CN CN201610365441.0A patent/CN106024999B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101319138A (en) * | 2008-07-10 | 2008-12-10 | 上海交通大学 | Production method for CdS and CdS/ZnS core-shell type quantum point |
| CN101319140A (en) * | 2008-07-10 | 2008-12-10 | 上海交通大学 | Production method for CdSeTe/CdS/ZnS core-shell type quantum point |
| CN101428770A (en) * | 2008-12-08 | 2009-05-13 | 云南大学 | Synthesis of ZnSe fluorescent quantum point |
| CN103555334A (en) * | 2013-10-21 | 2014-02-05 | 山东交通学院 | Preparation method and application of CdTe/ZnS core-shell quantum dots |
| CN104388089A (en) * | 2014-11-04 | 2015-03-04 | 北京理工大学 | High-fluorescence-quantum-yield hybridized perovskite quantum dot material and preparation method thereof |
| CN105206718A (en) * | 2015-09-25 | 2015-12-30 | 南京理工大学 | CsPbX3 inorganic perovskite quantum dot light-emitting diode (LED) prepared through solution method |
Non-Patent Citations (4)
| Title |
|---|
| SONG，JIZHONG: ""Quantum Dot Light-Emitting Diodes Based on Inorganic Perovskite Cesium Lead Halides"", 《ADVANCED MATERIALS》 * |
| 何卫东: "《高分子化学实验》", 31 January 2003 * |
| 张克立 等: "《无机合成化学》", 31 January 2012 * |
| 徐云升: "《基础化学实验》", 31 August 2012 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784391A (en) * | 2016-12-06 | 2017-05-31 | 广东昭信光电科技有限公司 | Quantum dot light emitting device and preparation method thereof, liquid crystal display device |
| CN107658385A (en) * | 2017-02-23 | 2018-02-02 | 广东聚华印刷显示技术有限公司 | quantum dot film and preparation method thereof |
| CN107658385B (en) * | 2017-02-23 | 2019-07-19 | 广东聚华印刷显示技术有限公司 | Quantum dot film and preparation method thereof |
| CN107195741A (en) * | 2017-04-06 | 2017-09-22 | 南京理工大学 | A kind of full-inorganic quantum dot backlight LED preparation method |
| CN109932379A (en) * | 2017-12-15 | 2019-06-25 | Tcl集团股份有限公司 | The measuring method and quantum dot ink formulation method of quantum dot surface ligand content |
| CN109932379B (en) * | 2017-12-15 | 2022-03-01 | Tcl科技集团股份有限公司 | Method for measuring content of ligand on surface of quantum dot and method for preparing quantum dot ink |
| CN110144208A (en) * | 2019-05-15 | 2019-08-20 | 南京理工大学 | Improve APbI3The method of perovskite quantum point efficiency |
| CN110157408A (en) * | 2019-05-17 | 2019-08-23 | 南京理工大学 | The method that equivalent ligand synthesizing efficient stablizes full-inorganic halogen perovskite quantum dot scintillator |
| CN110157408B (en) * | 2019-05-17 | 2022-05-20 | 南京理工大学 | Method for synthesizing efficient and stable all-inorganic halogen perovskite quantum dot scintillator by equivalent ligand |
| CN111517364A (en) * | 2020-04-27 | 2020-08-11 | 电子科技大学 | Stable silicon-coated pure phase CsPb2Br5Preparation method of inorganic nanocrystalline |
| CN111517364B (en) * | 2020-04-27 | 2021-09-24 | 电子科技大学 | Stable silicon-coated pure phase CsPb2Br5Preparation method of inorganic nanocrystalline |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106024999B (en) | 2019-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106024999A (en) | Quantum dot surface purification method for improving luminous efficiency of perovskite LED | |
| Song et al. | Organic–inorganic hybrid passivation enables perovskite QLEDs with an EQE of 16.48% | |
| Li et al. | High-performance CsPbBr3@ Cs4PbBr6/SiO2 nanocrystals via double coating layers for white light emission and visible light communication | |
| Zu et al. | Ultra-stable CsPbBr 3 nanocrystals with near-unity photoluminescence quantum yield via postsynthetic surface engineering | |
| Nanishi | The birth of the blue LED | |
| CN105621477A (en) | Inorganic perovskite CsPbX3 nanosheet synthesis method | |
| CN105670631B (en) | A kind of self-passivation quantum dot and preparation method thereof | |
| CN105602560B (en) | A kind of metal halide perovskite/nanocrystalline method of vulcanized lead hetero-junctions for synthesizing high stable | |
| CN109796976B (en) | Copper-doped red-light perovskite quantum dot and preparation method thereof | |
| Dutt et al. | Surface passivation strategies for improving photoluminescence and stability of cesium lead halide perovskite nanocrystals | |
| Zhang et al. | Hydrofluoroethers as orthogonal solvents for all-solution processed perovskite quantum-dot light-emitting diodes | |
| CN108641716B (en) | Preparation method of fluorescence-adjustable p-phenylenediamine carbon dots | |
| CN110144208A (en) | Improve APbI3The method of perovskite quantum point efficiency | |
| CN108929670A (en) | Core-shell quanta dots, preparation method, device and composition | |
| Wang et al. | Chemical regulation of metal halide perovskite nanomaterials for efficient light-emitting diodes | |
| CN108690600A (en) | High pressure prepares the method and quantum dot of quantum dot | |
| CN110564416B (en) | High-stability perovskite quantum dot composite material and preparation method thereof | |
| CN112175613A (en) | Method for preparing high-efficiency stable inorganic perovskite quantum dots by double-layer ligand | |
| CN105885824A (en) | Preparation method of ZnCdSe/ZnS quantum dots | |
| CN114540010B (en) | Preparation method of blue-light perovskite quantum dot | |
| Zhang et al. | All-inorganic silicon white light-emitting device with an external quantum efficiency of 1.0% | |
| CN108728099A (en) | A kind of nuclear shell structure quantum point material and preparation method thereof | |
| CN112011335B (en) | Preparation method of inorganic perovskite quantum dots | |
| CN107216869A (en) | Method for preparing quantum dot having continuous crystal growth structure with minimized grain boundary defects and quantum dot prepared thereby | |
| CN115433575B (en) | CsPbX 3 Preparation method of nanocrystalline material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |