CN106024824A - 可见光通信多芯片发光器件及其制备方法 - Google Patents

可见光通信多芯片发光器件及其制备方法 Download PDF

Info

Publication number
CN106024824A
CN106024824A CN201610320740.2A CN201610320740A CN106024824A CN 106024824 A CN106024824 A CN 106024824A CN 201610320740 A CN201610320740 A CN 201610320740A CN 106024824 A CN106024824 A CN 106024824A
Authority
CN
China
Prior art keywords
chip
type
layer
emitting device
negative electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610320740.2A
Other languages
English (en)
Inventor
郭志友
刘洋
黄涌
黄鸿勇
杨晛
黄晶
孙杰
衣新燕
孙慧卿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
South China Normal University
Original Assignee
South China Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by South China Normal University filed Critical South China Normal University
Priority to CN201610320740.2A priority Critical patent/CN106024824A/zh
Publication of CN106024824A publication Critical patent/CN106024824A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements

Abstract

本发明公开一种可见光通信多芯片发光器件及其制备方法，该器件包括多个若干个光发射芯片，所述若干个光发射芯片之间采用串联形式连接，即一个光发射芯片的正电极与另一个光发射芯片的负电极连接，所述发光器件利用高频率电流源供电，供电采用具有通信协议的信号转换为供电电流。

Description

可见光通信多芯片发光器件及其制备方法
技术领域
本发明涉及光电器件技术领域，具体涉及一种可见光通信多芯片发光器件及其制备方法。
背景技术
LED显示屏通常用于显示信息，如果将相应的信息和数据直接传输给用户手持终端，将会提供很大便利，在火车站、机场等场所有着巨大的应用前景。
可见光通信是LED重要的应用之一，可通过可见光通信将用户的位置信息通过照明设施来进行传递，这较传统卫星定位更为精准。用高速通信信号驱动LED工作，可以提供LiFi信号，实现光照范围内的无线上网，而当灯光信号被阻挡的时候，可以将现有的WiFi作为LiFi的补充技术，无缝地切换至射频通信系统。
传统的照明LED不是为通信而设计，所以传统LED的发光带宽很窄，约20MHz，而且有很强的非线性效应。与之对应的探测器也不是专为可见光波段设计，蓝光不是最敏感频段，所以在器件、封装、模块等方面都需要做一系列研究。
发明内容
本发明的目的是解决现有技术的缺陷，提供一种可见光通信多芯片发光器件，采用的技术方案如下：
一种可见光通信多芯片发光器件，包括多个若干个光发射芯片，所述若干个光发射芯片之间采用串联形式连接，即一个光发射芯片的正电极与另一个光发射芯片的负电极连接，所述发光器件利用高频率电流源供电。
作为优选，本发明中，供电采用具有通信协议的信号转换为供电电流。
作为优选，所述光发射芯片呈圆形结构，所述光发射芯片依次包括沉积于衬底上的石墨烯导电导热层、n型层、量子阱发光层和p型层，还包括蒸镀于石墨烯导电导热层上的N型负电极和在芯片上部中间的P型正电极。
光发射芯片互相串联连接，即一个光发射芯片的正电极与另一个光发射芯片的负电极连接，可见光通信发射器件的工作电压是多芯片电压之和，各个芯片通过的电流相等。发射器件利用高频率电流源供电，供电采用具有通信协议的信号转换为供电电流，发射器件在较高频率情况下供电时，发光效果起到照明作用，但是经过调制的通信协议可以进行通信。
作为优选，所述N型负电极呈圆环形。
作为优选，本发明包括七个光发射芯片。
与现有技术相比，本发明的有益效果：
本发明通过在衬底上镀石墨烯作为导电层，降低了电极接触电阻，提高了器件的导电和散热性能；独立芯片的小面积电流注入区域，提高了电流注入密度，有利于减小寄生电容，提高频率响应；芯片间的串联方式进一步降低了器件的整体电容，同时提高了整个器件的发光强度。在每个芯片中，N型负电极与P型正电极面积相等，实现发光层中载流子复合均匀等的效果，提高光发射芯片发光的均匀性，同时也能够在相同发光区域情况下提高发光效率。
本发明的另一目的是解决现有技术的缺陷，提供一种可见光通信多芯片发光器件的制备方法，采用的技术方案如下：
一种可见光通信多芯片发光器件的制备方法，包括以下步骤：
a.在蓝宝石衬底上依次沉积石墨烯导电导热层、N型半导体层、多量子阱层和P型半导体层；
b.在生长好的外延片上进行光刻，通过光刻，依次形成共用衬底的多个独立芯片、N型台面和电极区，所述N型台面指通过刻蚀漏出石墨烯层，作为导电层以蒸镀N型负电极；
c.步骤b中，每次光刻之后使用ICP（Inductive Coupled Plasma Emission Spectrometer、感应耦合等离子）干法刻蚀技术，将光刻板上的预设图形转移到外延片上；
d.在N型台面上蒸镀N型负电极、在P型半导体层正上方的位置蒸镀P型正电极；
f.制作金线，通过金线将一个芯片N型负电极与另一个芯片的P型正电极连接起来。
作为优选，在刻蚀阶段，刻蚀深度到达衬底表面，以保证多个芯片之间绝缘独立。
与现有技术相比，本发明的有益效果：
本发明通过在衬底上镀石墨烯作为导电层，降低了电极接触电阻，提高了器件的导电和散热性能；独立芯片的小面积电流注入区域，提高了电流注入密度，有利于减小寄生电容，提高频率响应；芯片间的串联方式进一步降低了器件的整体电容，同时提高了整个器件的发光强度。在N型负电极与P型正电极之间的量子阱发光层的几何尺寸对称，实现发光层中载流子复合均匀等的效果，提高光发射芯片发光的均匀性，同时也能够在相同发光区域情况下提高发光效率。
附图说明
图1是本发明的可见光通信发射器件结构图；
图2是本发明的可见光通信发射器件顶视图；
图3是本发明的可见光通信发射芯片结构图。
具体实施方式
下面结合附图和实施例对本发明做进一步详细描述。
实施例：
如图1至图3所示，一种可见光通信多芯片发光器件，包括七个光发射芯片2、4、6、8、10、12、14，七个光发射芯片之间采用串联形式连接，即一个光发射芯片的正电极与另一个光发射芯片的负电极连接，剩下一个未与其它光发射芯片的负电极连接的光发射芯片的正电极与器件的负电极17连接，而剩下一个未与其它光发射芯片的正电极连接的光发射芯片的负电极与器件的正电极16连接，所述发光器件利用高频率电流源供电，供电采用具有通信协议的信号转换为供电电流。
所述光发射芯片呈圆形结构，所述光发射芯片依次包括沉积于衬底上的石墨烯导电导热层26、n型层25、量子阱发光层24和p型层23，还包括蒸镀于石墨烯导电导热层26上的N型负电极21和在芯片上部中间的P型正电极22。
一种可见光通信多芯片发光器件的制备方法，采用的技术方案如下：
一种可见光通信多芯片发光器件的制备方法，包括以下步骤：
a.在蓝宝石衬底上依次沉积石墨烯导电导热层、N型半导体层、多量子阱层和P型半导体层；
b.在生长好的外延片上进行光刻，通过光刻，依次形成共用衬底的多个独立芯片、N型台面和电极区，所述N型台面指通过刻蚀漏出石墨烯层，作为导电层以蒸镀N型负电极；
c.步骤b中，每次光刻之后使用ICP（Inductive Coupled Plasma Emission Spectrometer、感应耦合等离子）干法刻蚀技术，将光刻板上的预设图形转移到外延片上；
d.在N型台面上蒸镀N型负电极、在P型半导体层正上方的位置蒸镀P型正电极；
f.制作金线，通过金线将一个芯片N型负电极与另一个芯片的P型正电极连接起来；
在刻蚀阶段，刻蚀深度到达衬底表面，以保证多个芯片之间绝缘独立。

Claims (6)

1.一种可见光通信多芯片发光器件，其特征在于，包括多个若干个光发射芯片，所述若干个光发射芯片之间采用串联形式连接，即一个光发射芯片的正电极与另一个光发射芯片的负电极连接，所述发光器件利用高频率电流源供电。
2.根据权利要求1所述的可见光通信多芯片发光器件，其特征在于，所述光发射芯片呈圆形结构，所述光发射芯片依次包括沉积于衬底上的石墨烯导电导热层、n型层、量子阱发光层和p型层，还包括蒸镀于石墨烯导电导热层上的N型负电极和在芯片上部中间的P型正电极。
3.根据权利要求1所述的可见光通信多芯片发光器件，其特征在于，所述N型负电极呈圆环形。
4.根据权利要求1所述的可见光通信多芯片发光器件，其特征在于，包括七个光发射芯片。
5.一种可见光通信多芯片发光器件的制备方法，其特征在于，包括以下步骤：
a.在蓝宝石衬底上依次沉积石墨烯导电导热层、N型半导体层、多量子阱层和P型半导体层；
b.在生长好的外延片上进行光刻，通过光刻，依次形成共用衬底的多个独立芯片、N型台面和电极区，所述N型台面指通过刻蚀漏出石墨烯层，作为导电层以蒸镀N型负电极；
c.步骤b中，每次光刻之后使用ICP（Inductive Coupled Plasma Emission Spectrometer、感应耦合等离子）干法刻蚀技术，将光刻板上的预设图形转移到外延片上；
d.在N型台面上蒸镀N型负电极、在P型半导体层正上方的位置蒸镀P型正电极；
f.制作金线，通过金线将一个芯片N型负电极与另一个芯片的P型正电极连接起来。
6.根据权利要求5所述的可见光通信多芯片发光器件的制备方法，其特征在于，在刻蚀阶段，刻蚀深度到达衬底表面，以保证多个芯片之间绝缘独立。
CN201610320740.2A 2016-05-16 2016-05-16 可见光通信多芯片发光器件及其制备方法 Pending CN106024824A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610320740.2A CN106024824A (zh) 2016-05-16 2016-05-16 可见光通信多芯片发光器件及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610320740.2A CN106024824A (zh) 2016-05-16 2016-05-16 可见光通信多芯片发光器件及其制备方法

Publications (1)

Publication Number Publication Date
CN106024824A true CN106024824A (zh) 2016-10-12

Family

ID=57098153

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610320740.2A Pending CN106024824A (zh) 2016-05-16 2016-05-16 可见光通信多芯片发光器件及其制备方法

Country Status (1)

Country Link
CN (1) CN106024824A (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090302334A1 (en) * 2002-07-15 2009-12-10 Epistar Corporation Light-emitting element array
CN102748604A (zh) * 2011-04-19 2012-10-24 晶元光电股份有限公司 照明及光通讯二用的发光装置及发光二极管模块
CN103022070A (zh) * 2012-11-22 2013-04-03 华南理工大学 一种具有新型发光单元结构的大尺寸led芯片

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090302334A1 (en) * 2002-07-15 2009-12-10 Epistar Corporation Light-emitting element array
CN102748604A (zh) * 2011-04-19 2012-10-24 晶元光电股份有限公司 照明及光通讯二用的发光装置及发光二极管模块
CN103022070A (zh) * 2012-11-22 2013-04-03 华南理工大学 一种具有新型发光单元结构的大尺寸led芯片

Similar Documents

Publication Publication Date Title
KR100928259B1 (ko) 발광 장치 및 그 제조방법
CN104900637B (zh) 发光元件
CN104103659B (zh) 单晶双光源发光元件
KR102007405B1 (ko) 발광 모듈
CN103219352A (zh) 阵列式结构的led组合芯片及其制作方法
CN105161587A (zh) 可见光通信led器件
CN102593304B (zh) 一种使用陶瓷散热的高功率led灯具
CN101794850B (zh) 平行四边形GaN基发光二极管芯片的对称电极
WO2022127457A1 (zh) 一种可见光通信led器件
CN101794851B (zh) 三角形GaN基发光二极管芯片的对称电极
CN100418203C (zh) 发光二极管外延片电致发光无损检测方法
CN102201527A (zh) 一种led封装结构及其制备方法
CN102637783A (zh) 一种垂直结构白光发光二极管及其制造方法
CN202839748U (zh) 一种基于倒装led芯片的白光光源模组
CN105140363B (zh) 功率型可见光通信led器件
CN103647010A (zh) 一种大功率led芯片的制作方法
CN201282152Y (zh) 中心环绕形GaN基LED芯片电极
CN106024824A (zh) 可见光通信多芯片发光器件及其制备方法
CN202712178U (zh) 由倒装发光单元阵列组成的立体发光器件
CN201918385U (zh) 一种大功率GaN基发光二极管
CN104425667A (zh) 一种SiC衬底倒装LED芯片及其制备方法
CN109461753B (zh) 一种大注入倒装微米led芯片及其制备方法
CN102544048A (zh) 一种大功率GaN基发光二极管及其制作方法
CN102214746A (zh) 一种氮化镓基功率型led芯片制作方法
CN206864498U (zh) 一种倒装led芯片阵列结构

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20161012

RJ01 Rejection of invention patent application after publication