CN106024603A - Method for improving uniformity of laser spike annealing process and insulated gate bipolar transistor - Google Patents
Method for improving uniformity of laser spike annealing process and insulated gate bipolar transistor Download PDFInfo
- Publication number
- CN106024603A CN106024603A CN201610596456.8A CN201610596456A CN106024603A CN 106024603 A CN106024603 A CN 106024603A CN 201610596456 A CN201610596456 A CN 201610596456A CN 106024603 A CN106024603 A CN 106024603A
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- China
- Prior art keywords
- annealing process
- laser
- spike annealing
- degree
- process uniformity
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Links
- 238000000034 method Methods 0.000 title claims abstract description 69
- 238000000137 annealing Methods 0.000 title claims abstract description 57
- 238000009826 distribution Methods 0.000 claims abstract description 16
- 230000008646 thermal stress Effects 0.000 claims abstract description 6
- 238000012421 spiking Methods 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000012141 concentrate Substances 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 14
- 239000012634 fragment Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
Abstract
The invention provides a method for improving the uniformity of a laser spike annealing process and an insulated gate bipolar transistor. The method for improving the uniformity of the laser spike annealing process comprises that the scanning direction of the laser spike annealing process is enabled to be unparallel to a scribing groove so as to prevent or alleviate instantaneous concentration of thermal stress of the scribing groove in the laser spike annealing process, thereby eliminating stripe distribution.
Description
Technical field
The present invention relates to field of semiconductor manufacture, it is more particularly related to a kind of improving laser spike
The method of annealing (Laser Spike Annealing, be called for short LSA) process uniformity and use this lifting
The igbt that the method for laser spiking annealing process uniformity is made.
Background technology
Leading of some igbts (Insulated Gate Bipolar Transistor, IGBT) product
Logical saturation voltage drop (Vcesat) shows as striated distribution.These striated distribution results carry out checking find,
Striated distribution is relevant with laser spiking annealing process.
Laser spiking annealing process acquiescence carries out the scanning in the direction (X-direction) parallel with otch (notch).
Board has the ability to do the scanning in the direction (Y-direction) vertical with otch.And insulated gate bipolar transistor IGBT
Product striated distribution can along with X and Y scan generation same transition, thus judge these striateds distribution with
Laser spiking annealing is relevant.
In order to eliminate product fringe distribution, temporary transient solution is to carry out X and Y scan respectively.But so can
Cause board production capacity drop by half, fragment rate can be caused simultaneously to improve (twice laser spiking annealing process).
Therefore, it is desirable to propose a kind of to eliminate striped and the method that production capacity can not be affected again.
Summary of the invention
The technical problem to be solved is for there is drawbacks described above in prior art, it is provided that one was both
Striped can be eliminated and the method for improving laser spike annealing process uniformity of production capacity can not be affected again.
In order to realize above-mentioned technical purpose, according to the present invention, it is provided that a kind of improving laser spike annealing processing procedure
The method of uniformity, wherein makes the scanning direction of laser spiking annealing process and scribe line not parallel, in case
When stopping or alleviate laser spiking annealing process, scribe line thermal stress moment concentrates, and thus eliminates fringe distribution.
Preferably, the method for described improving laser spike annealing process uniformity is used for manufacturing insulated gate bipolar crystalline substance
Body pipe.
Preferably, the method for described improving laser spike annealing process uniformity includes:
First step: wafer is arranged in laser spiking annealing machine bench；
Second step: rotating wafer is so that the direction of Wafer Dicing groove is different from the laser spiking that will perform
The direction of annealing scanning；
Third step: perform the annealing scanning of described laser spiking.
Preferably, in the second step, rotating wafer is so that the direction of Wafer Dicing groove is relative to holding
The direction deviation predetermined angular of the laser spiking annealing scanning of row.
Preferably, described predetermined angular is between 15 to 75.
Preferably, described predetermined angular is 15 degree, 30 degree, 45 degree, 60 degree or 75 degree.
Preferably, described predetermined angular is 45 degree.
In order to realize above-mentioned technical purpose, according to the present invention, additionally provide a kind of employing described improving laser point
The igbt that the method for peak annealing process uniformity is made.
The present invention, based on striated distribution theory basis, proposes to make the scanning direction of laser spiking annealing process
Not parallel with scribe line, thus eliminate fringe distribution.Scanning direction discord scribe line in the same direction, is possible to prevent
Or when alleviating laser spiking annealing process, scribe line thermal stress moment concentrates, and thus the present invention can reduce brokenly
Sheet rate.The method of the improving laser spike annealing process uniformity according to the present invention can be completely eliminated insulated gate
Bipolar transistor conduction voltage drop striated is distributed, and does not affect production capacity simultaneously, it is also possible to reduce ultra-thin wafers
Fragment rate at laser spiking annealing process.
Accompanying drawing explanation
In conjunction with accompanying drawing, and by with reference to detailed description below, it will more easily the present invention is had more complete
Understand and its adjoint advantage and feature is more easily understood, wherein:
It is uniform that Fig. 1 schematically shows improving laser spike annealing processing procedure according to the preferred embodiment of the invention
The flow chart of the method for property.
It should be noted that accompanying drawing is used for illustrating the present invention, and the unrestricted present invention.Note, represent structure
Accompanying drawing may be not necessarily drawn to scale.Further, in accompanying drawing, same or like element indicate identical or
The label that person is similar to.
Detailed description of the invention
In order to make present disclosure more clear and understandable, below in conjunction with specific embodiments and the drawings to this
Bright content is described in detail.
Speculating striated Producing reason by experimental data, the present inventor proposes, for manufacturing example
Such as igbt, as long as getting along well in scanning direction, Wafer Dicing groove (cutting groove) same direction is i.e.
Striated distribution can be eliminated.And further, after experiment confirms 45 degree of rotating wafer, striated has been distributed
Full elimination.But, board itself in addition to 0 degree (X-direction) and 90 degree (Y-direction), other
Where all can not support to board, so board upgrading optimization is become needs.
It is uniform that Fig. 1 schematically shows improving laser spike annealing processing procedure according to the preferred embodiment of the invention
The flow chart of the method for property.
As it is shown in figure 1, the side of improving laser spike annealing process uniformity according to the preferred embodiment of the invention
Method includes:
First step S1: wafer is arranged in laser spiking annealing machine bench；
Second step S2: rotating wafer is so that the direction of Wafer Dicing groove is different from the laser point that will perform
The direction of peak annealing scanning；
Such as, in second step S2, rotating wafer is so that the direction of Wafer Dicing groove is relative to holding
The direction deviation predetermined angular of the laser spiking annealing scanning of row.For example, described predetermined angular is between 15
Between 75.Such as, described predetermined angular is 15 degree, 30 degree, 45 degree, 60 degree or 75 degree.Wherein,
It is optimal choice that described predetermined angular is 45 degree, and experiment confirms that the setting of 45 degree makes striated distribution completely
Eliminate.
Third step S3: perform the annealing scanning of described laser spiking.Scanning direction discord scribe line in the same direction, can
During to prevent or to alleviate laser spiking annealing process, scribe line thermal stress moment concentrates, and thus the present invention is permissible
Reduce fragment rate.
Another specific embodiment according to the present invention, it is provided that the described improving laser spike annealing system of a kind of employing
The igbt that the method for journey uniformity is made.
The present invention, based on striated distribution theory basis, proposes to make the scanning direction of laser spiking annealing process
Not parallel with scribe line, thus eliminate fringe distribution.Scanning direction discord scribe line in the same direction, is possible to prevent
Or when alleviating laser spiking annealing process, scribe line thermal stress moment concentrates, and thus the present invention can reduce brokenly
Sheet rate.The method of the improving laser spike annealing process uniformity according to the present invention can be completely eliminated insulated gate
Bipolar transistor conduction voltage drop striated is distributed, and does not affect production capacity simultaneously, it is also possible to reduce ultra-thin wafers
Fragment rate at laser spiking annealing process.
The present invention eliminates the conduction voltage drop striated distribution of igbt, promotes end properties.And
And, the present invention need not twice laser spiking annealing process of X-direction and Y-direction, thus does not affect board
Production capacity.
Furthermore, it is necessary to explanation, unless stated otherwise or point out, otherwise the term in description " first ",
" second ", " the 3rd " etc. describe be used only for distinguishing in description each assembly, element, step etc., and not
It is intended to indicate that the logical relation between each assembly, element, step or ordering relation etc..
Although it is understood that the present invention discloses as above with preferred embodiment, but above-described embodiment is also
It is not used to limit the present invention.For any those of ordinary skill in the art, without departing from skill of the present invention
In the case of art aspects, technical solution of the present invention is made many by the technology contents that all may utilize the disclosure above
Possible variation and modification, or it is revised as the Equivalent embodiments of equivalent variations.Therefore, every without departing from this
The content of bright technical scheme, according to the present invention technical spirit to any simple modification made for any of the above embodiments,
Equivalent variations and modification, all still fall within the range of technical solution of the present invention protection.
Claims (8)
1. the method for an improving laser spike annealing process uniformity, it is characterised in that wherein make laser
Scanning direction and the scribe line of spike annealing processing procedure are not parallel, to prevent or to alleviate laser spiking annealing process
Time scribe line thermal stress moment concentrate, thus eliminate fringe distribution.
The method of improving laser spike annealing process uniformity the most according to claim 1, its feature exists
In, the method for described improving laser spike annealing process uniformity is used for manufacturing igbt.
The method of improving laser spike annealing process uniformity the most according to claim 1 and 2, it is special
Levy and be to include:
First step: wafer is arranged in laser spiking annealing machine bench；
Second step: rotating wafer is so that the direction of Wafer Dicing groove is different from the laser spiking that will perform
The direction of annealing scanning；
Third step: perform the annealing scanning of described laser spiking.
The method of improving laser spike annealing process uniformity the most according to claim 3, its feature exists
In, in the second step, rotating wafer is so that the direction of Wafer Dicing groove is relative to the laser that will perform
The direction deviation predetermined angular of spike annealing scanning.
The method of improving laser spike annealing process uniformity the most according to claim 3, its feature exists
In, described predetermined angular is between 15 to 75.
The method of improving laser spike annealing process uniformity the most according to claim 3, its feature exists
In, described predetermined angular is 15 degree, 30 degree, 45 degree, 60 degree or 75 degree.
The method of improving laser spike annealing process uniformity the most according to claim 3, its feature exists
In, described predetermined angular is 45 degree.
8. one kind uses according to the improving laser spike annealing process uniformity one of claim 1 to 7 Suo Shu
The igbt made of method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610596456.8A CN106024603A (en) | 2016-07-27 | 2016-07-27 | Method for improving uniformity of laser spike annealing process and insulated gate bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610596456.8A CN106024603A (en) | 2016-07-27 | 2016-07-27 | Method for improving uniformity of laser spike annealing process and insulated gate bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106024603A true CN106024603A (en) | 2016-10-12 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201610596456.8A Pending CN106024603A (en) | 2016-07-27 | 2016-07-27 | Method for improving uniformity of laser spike annealing process and insulated gate bipolar transistor |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060091120A1 (en) * | 2002-11-06 | 2006-05-04 | Markle David A | Recycling optical systems and methods for thermal processing |
| US20060118036A1 (en) * | 2002-09-30 | 2006-06-08 | Hitachi, Ltd. | Semiconductor thin film and process for production thereof |
| CN103117211A (en) * | 2013-02-20 | 2013-05-22 | 上海华力微电子有限公司 | Method for improving surface resistance uniformity of wafer after laser annealing |
| US8501638B1 (en) * | 2012-04-27 | 2013-08-06 | Ultratech, Inc. | Laser annealing scanning methods with reduced annealing non-uniformities |
| CN103779195A (en) * | 2014-01-29 | 2014-05-07 | 上海集成电路研发中心有限公司 | Laser annealing method and system |
-
2016
- 2016-07-27 CN CN201610596456.8A patent/CN106024603A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060118036A1 (en) * | 2002-09-30 | 2006-06-08 | Hitachi, Ltd. | Semiconductor thin film and process for production thereof |
| US20060091120A1 (en) * | 2002-11-06 | 2006-05-04 | Markle David A | Recycling optical systems and methods for thermal processing |
| US8501638B1 (en) * | 2012-04-27 | 2013-08-06 | Ultratech, Inc. | Laser annealing scanning methods with reduced annealing non-uniformities |
| CN103117211A (en) * | 2013-02-20 | 2013-05-22 | 上海华力微电子有限公司 | Method for improving surface resistance uniformity of wafer after laser annealing |
| CN103779195A (en) * | 2014-01-29 | 2014-05-07 | 上海集成电路研发中心有限公司 | Laser annealing method and system |
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Application publication date: 20161012 |
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