CN106024388A - Method for preparing polymer film capacitor - Google Patents
Method for preparing polymer film capacitor Download PDFInfo
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- CN106024388A CN106024388A CN201610606671.1A CN201610606671A CN106024388A CN 106024388 A CN106024388 A CN 106024388A CN 201610606671 A CN201610606671 A CN 201610606671A CN 106024388 A CN106024388 A CN 106024388A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 32
- 229920006254 polymer film Polymers 0.000 title claims abstract description 20
- 238000005245 sintering Methods 0.000 claims abstract description 51
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 45
- 238000002360 preparation method Methods 0.000 claims abstract description 45
- 238000000137 annealing Methods 0.000 claims abstract description 15
- 239000007921 spray Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 52
- 239000000976 ink Substances 0.000 claims description 50
- 239000011521 glass Substances 0.000 claims description 42
- 239000010408 film Substances 0.000 claims description 39
- 229920000642 polymer Polymers 0.000 claims description 31
- 229910052709 silver Inorganic materials 0.000 claims description 27
- 239000004332 silver Substances 0.000 claims description 27
- 238000009413 insulation Methods 0.000 claims description 25
- 239000012528 membrane Substances 0.000 claims description 25
- 238000000520 microinjection Methods 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 21
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical compound OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000006116 polymerization reaction Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 238000001035 drying Methods 0.000 description 15
- 239000012190 activator Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000007639 printing Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 235000011149 sulphuric acid Nutrition 0.000 description 2
- 239000001117 sulphuric acid Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 235000009161 Espostoa lanata Nutrition 0.000 description 1
- 240000001624 Espostoa lanata Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000009514 concussion Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000007786 learning performance Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- UZRCGISJYYLJMA-UHFFFAOYSA-N phenol;styrene Chemical compound OC1=CC=CC=C1.C=CC1=CC=CC=C1 UZRCGISJYYLJMA-UHFFFAOYSA-N 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
Abstract
The invention discloses a method for preparing a polymer film capacitor. The method comprises a step of using a micro-droplet spray method to prepare a polymer film capacitor bottom nano silver layer film and carrying out sintering solification on the film to form a bottom conductive layer, a step of preparing a middle insulating layer film and carrying out sintering solification on the film to form an intermediate dielectric layer, a step of preparing a top nano silver layer film and carrying out sintering solification on the film to form a top conductive layer, and a step of carrying out annealing processing to obtain the polymer film capacitor. The preparation process of the polymer film capacitor is simple, the cost is low, a specific template is not needed, the shape of the capacitor can be directly formed by injection, the geometrical size and electrical properties of the capacitor are highly controable, the performance is stable, and the consistency is high.
Description
Technical field
The present invention relates to the preparation method of electric capacity, be specially a kind of thin polymer film capacitor fabrication method.
Background technology
Printed electronics technology is to use printing technology, and the ink of functionalization is printed in various substrate rapidly, forms electricity
Sub-components and parts and electronic circuit, it is possible to the technique effectively solving the electronic product existence that existing employing silicon technology manufactures
Flow process complexity, production cycle length, waste of material are big, and the problems that environmental pollution is serious are ground in production management, science
Study carefully, each field such as traffic administration and logistics supply chain has a wide range of applications.Thin-film capacitor is the pass in printed electronics circuit
Bonding electron components and parts, its performance has important impact to the performance of printed electronics circuit.
At present, the preparation method of thin-film capacitor mainly has etching method, electroplated metallization method and ink method for printing.Wherein, etching
Method, owing to needing to carry out the operation of etching process, has problem relatively costly, that cycle length, precision are relatively low, corrodes simultaneously
Environment is easily polluted in agent；The major defect of coating method is to need to produce in enormous quantities, higher to the demand of equipment.Ink is printed
Method, by printing the polymer ink with specific function, is widely used in printed electronics field.Its
In, silk-screen printing technique has higher preparation precision, but the ink used is generally high viscosity inks, and ink film thickness is relatively
Greatly, it is difficult to the thin-film capacitor that preparation thickness is less.Intaglio plate printing technology can obtain preferable graphics resolution, prints oil
The thickness of ink is moderate, but it is big to print pressure during printing, and easily makes the surface of electric capacity deform, affects thin-film capacitor
Serviceability.Ink-jet printing process be a kind of contactless digitized without version printing technology, it has the advantage that micro-
Nozzle and substrate noncontact, it is to avoid damage and the electrically conductive ink of micro-nozzle are contaminated, and substrate surface does not produce pressure,
Improve preparation stability and precision；More low viscous ink, worth thickness can be used to be easily controlled；Without plate-making,
Simplify printing process.But, the printing equipment used in ink-jet printed method is mainly commercial ink-jet printer, printer
Equipment structure is complicated, expensive, and printer head is difficult to dismounting, cleans and keep in repair.
Summary of the invention
In view of the preparation method of existing polymer thin membrane capacitance described above, to have preparation process complicated, equipment requirements is high,
The shortcomings such as cost is big, it is an object of the invention to provide a kind of simple in construction, the thin polymer film that cost is relatively low, precision is higher
Capacitor fabrication method.
The present invention is achieved by the following technical solutions: a kind of thin polymer film capacitor fabrication method, comprises the following steps:
Step 1.1, utilizes capillarity that nano silver conductive ink sucks glass micro-nozzle a；
Step 1.2, drives glass micro-nozzle a, by nano silver conductive ink micro-injection uniformly and stably to the clean lid processed
Slide substrate surface, forms the nanometer silver coated film that edge is more straight；
Step 1.3, by the nanometer silver coated film sintering curing of preparation, can prepare polymer at coverslip substrate surface
The bottom conductive layer of thin-film capacitor；
Step 1.4, sucks glass micro-nozzle b by poly-para-position vinylphenol insulation inks；
Step 1.5, drives glass micro-nozzle b, by poly-para-position vinylphenol insulation inks micro-injection uniformly and stably to poly-
The bottom conductive layer surface of compound thin-film capacitor, forms the insulation inks coated film that edge is more straight；
Step 1.6, by the insulation inks coated film sintering curing of preparation, can prepare polymerization at coverslip substrate surface
The intermediate dielectric layer of thing thin-film capacitor；
Step 1.7, according to the capacitance of required polymer thin membrane capacitance, repeats step 1.5 and step 1.6, increases polymerization
The thickness of thing thin-film capacitor；
Step 1.8, drives glass micro-nozzle a, by the most on-demand for nano silver conductive ink micro-injection to polymer thin
The intermediate dielectric layer surface of membrane capacitance, forms the nanometer silver coated film that edge is more straight；
Step 1.9, is dried coverslip substrate, after sintering curing, substrate is taken out, can be in coverslip substrate
Surface prepares polymer thin membrane capacitance.
Preferably, glass micro-nozzle a exit inside diameter is 50～80 μm, and the suction volume of silver ink is micro-nozzle volume
1/3～2/3；Glass micro-nozzle b exit inside diameter is 80～120 μm, and the suction volume of poly-para-position vinylphenol insulation inks is
The 1/2～2/3 of micro-nozzle volume.
Further, driving voltage amplitude and driving voltage frequency realize, and driving voltage amplitude is set to 30～80V,
Driving frequency is set as 5Hz；Edge is more directly by arranging the realization of suitable Duplication, and Duplication is set as
30%～70%.
Further, the sintering temperature described in step 1.3 and step 1.6 is 80～200 DEG C, and sintering time is 5～30min.
Through a step, in step 1.9, drying and sintering solidification process part is carried out for twice, is sintering curing for the first time, temperature
Being 80～200 DEG C, the time is 5～30min, and second time is sintering annealing, and temperature is 50 DEG C, and the time is 20min
Compared with prior art, the present invention has remarkable advantage and is:
(1) the polymer thin membrane capacitance preparation process of the present invention is simple, with low cost, it is not necessary to specific template, prepares thin film
The substrate of electric capacity is made without the hydrophobe surface of complexity and processes, the physical dimension of the polymer thin membrane capacitance prepared and electricity
Learning performance and have higher controllability, stable performance, concordance is higher.
(2) drop micro-injection and sintering process is used to prepare polymer thin membrane capacitance due to the present invention, the emitted dose of drop and spray
Penetrate position controllable precise, so the performance characteristics that the present invention has stable performance, concordance is good, precision is high, low in energy consumption,
It is suitable for producing preparation in enormous quantities.
Accompanying drawing explanation
Fig. 1 is the drop micro-injection preparation system schematic diagram of Inventive polymers thin-film capacitor.
Fig. 2 is the preparation process schematic diagram of Inventive polymers thin-film capacitor.
Wherein, 1 micro-nozzle adjusting bracket；2 first connectors；3 piezo-activators；Structure biconial glass micro-nozzle in 4
Clamper；5 second connectors；Structure biconial glass micro-nozzle in 6；7 nano silver conductive inks/poly-para-position vinyl benzene
Phenol insulation inks；8 digit microscopes；9 two-dimentional work bench；10 coverslip substrates；Nanometer silver figure layer film bottom 11；
12 bottom conductive layers；13 intermediate insulation layer films；14 intermediate dielectric layer；15 top nanometer silver figure layer films；16 tops
Conductive layer
Detailed description of the invention
The principle of the present invention is: use a kind of drop micro-injection technology injection nano silver conductive ink to prepare thin polymer film electricity
Hold bottom conductive layer film, and its sintering curing is formed bottom conductive layer；Spray poly-para-position vinylphenol insulation inks
Prepare intermediate insulation layer film, and its sintering curing is formed intermediate dielectric layer；Injection nano silver conductive ink prepares top
Membrane of conducting layer, forms top conductive layer to its sintering curing；Finally make annealing treatment, can be prepared by thin polymer film
Electric capacity.
In the present invention, drop micro-injection is by with pulseintertia forces as active force, overcomes interior structure biconial glass micro-nozzle
In (seeing thesis for the doctorate " digitized drop micro-injection technology and the applied research in printed electronics thereof "), liquid is viscous
Property power realize.Described pulseintertia forces can produce with various ways, and due to piezoelectric device, to have voltage-displacement dynamic
Respond, response frequency high, the outside pulseintertia forces that produces of micro-nozzle can be placed in as overall driver, thus this
Invention pulseintertia forces is provided by piezo-activator.Fig. 1 show drop micro-injection preparation system schematic diagram, first will pressure
Electric actuator 3 and required interior structure biconial glass micro-nozzle 6 are connected to micro-spray by first connector the 2, second connector 5
On mouth adjusting bracket 1, changed the distance of interior structure biconial glass micro-nozzle 6 and coverslip substrate 10 by adjusting bracket 1.
The amplification of regulation digit microscope 8 and focal length so that interior structure biconial glass micro-nozzle 6 and coverslip substrate 10
Can show the most on the computer screen.Fig. 2 show the preparation process schematic diagram of polymer thin membrane capacitance,
In coverslip substrate 10, bottom nanometer silver figure layer film 11 is prepared initially with drop micro-injection technology.Subsequently will lid
Slide substrate is sintered in being placed in thermostatic drying chamber, after curing molding, can be prepared by bottom conductive layer 12.Then the end of at
Prepare intermediate insulation layer film 13 on portion's conductive layer 12, burn in subsequently coverslip substrate being placed in thermostatic drying chamber
Knot, after curing molding, can be prepared by intermediate dielectric layer 14.Then, intermediate dielectric layer is prepared top nanometer silver figure layer
Thin film 15.It is sintered in subsequently coverslip substrate being placed in thermostatic drying chamber, after curing molding, can be prepared by top and lead
Electric layer 16.Finally, make annealing treatment in coverslip substrate is placed in thermostatic drying chamber, can be prepared by thin polymer film electricity
Hold.
Described interior structure biconial glass micro-nozzle 6 use glass cold and hot working technique prepare, initially with laser micropin/
Microelectrode draw instrument (Sutter P-97/P-2000, U.S. Sutter) by blank external diameter be 1.0mm, internal diameter be 0.6mm
Borosilicate glass capillary tube break into micropin, then use forging pin instrument (MF-900, Japan Narishige) by micro-
Pin blocks and outlet is forged into interior structure biconial in suitably sized position, and finally prepd exit inside diameter variable range is
50～120 μm；The micro-nozzles such as interior structure biconial glass micro-nozzle has preferable drop micro-injection ability, relatively flat mouth can
Micro-injection goes out the solution of bigger viscosity.
Embodiment 1
The preparation of polymer thin membrane capacitance, specifically comprises the following steps that
The clean process of step 1 coverslip substrate 10: PET film is put in beaker, pour appropriate concentrated sulphuric acid into,
It is placed on heating furnace heating 10 minutes, then takes out cooling 10 minutes, more residual with deionized water rinsing PET film surface
Remaining concentrated sulphuric acid.Put in the beaker containing acetone after drying with cotton balls, then beaker is put into concussion in ultrasonic washing instrument
10 minutes, rinse well with deionized water after taking-up, and with nitrogen, its surface moisture is dried up, as shown in Figure 2 a.
The preparation of structure biconial glass micro-nozzle 6 in step 2: the interior structure biconial glass micro-nozzle preparation side described in employing
Method prepares the interior structure biconial glass micro-nozzle a that internal diameter is 50 μm, and utilizes capillarity principle by nano-silver conductive
Ink loads interior structure biconial glass micro-nozzle 6.
The preparation of step 3 nanometer silver figure layer film 11: the driving voltage amplitude arranging piezo-activator 3 is 40V, drives
Dynamic frequency is 5Hz, and the kinematic parameter arranging two-dimentional work bench 9 makes drop Duplication be 60%, drives glass micro-nozzle
A, by the most on-demand for nano silver conductive ink micro-injection to the clean coverslip substrate surface processed, forms edge
More straight nanometer silver figure layer film 11, as shown in Figure 2 b；
The preparation of step 4 polymer thin membrane capacitance bottom conductive layer 12: preparation is had the coverslip of nanometer silver figure layer film
Substrate is placed in thermostatic drying chamber, sets sintering temperature as 140 DEG C, and sintering time is 25min, after sintering curing, and will
Substrate take out, can coverslip substrate surface prepare resistivity be 4.6 μ Ω .cm, the bottom surface length of side be the polymer of 5mm
The bottom conductive layer of thin-film capacitor, as shown in Figure 2 c；
Step 5: it is double that the interior structure biconial glass micro-nozzle preparation method described in employing prepares the interior structure that internal diameter is 80 μm
Cone-shaped glass micro-nozzle b, and utilize capillarity principle that poly-para-position vinylphenol insulation inks is loaded glass micro-nozzle
b。
It is 60V that step 6 arranges the driving voltage amplitude of piezo-activator 3, and driving frequency is 5Hz, arranges two-dimensional working
Platform 9 kinematic parameter makes drop Duplication be 60%, drives glass micro-nozzle b, is led to bottom by insulation inks micro-injection
In electric layer 12, can be prepared by the insulation inks figure layer film 15 that edge is more straight, as shown in Figure 2 d.
Preparation is had the coverslip substrate of insulation inks figure layer film 15 to be placed in thermostatic drying chamber by step 7, sets sintering
Temperature is 160 DEG C, and sintering time is 15min, after sintering curing, substrate is taken out, can be prepared by insulating properties higher
Thickness be 100 μm, the bottom surface length of side be the intermediate dielectric layer 16 of 5mm, as shown in Figure 2 e；
It is 40V that step 8 arranges the driving voltage amplitude of piezo-activator 3, and driving frequency is 5Hz, arranges two-dimensional working
The kinematic parameter of platform 9 makes drop Duplication be 60%, drives glass micro-nozzle a, and nano silver conductive ink is the most steady
Surely on-demand micro-injection, to intermediate dielectric layer surface, forms the nanometer silver figure layer film 15 that edge is more straight, as shown in figure 2f；
The preparation of step 9 thin polymer film capacitive head conductive layer 16: preparation is had the lid glass of nanometer silver figure layer film 15
Sheet substrate is placed in thermostatic drying chamber, sets sintering temperature as 140 DEG C, and sintering time is 25min, after sintering curing,
By substrate take out, can coverslip substrate surface prepare resistivity be 4.6 μ Ω .cm, the bottom surface length of side be the polymerization of 5mm
The bottom conductive layer of thing thin-film capacitor, as shown in Figure 2 g；
Step 10 sets annealing temperature as 50 DEG C, and the annealing time is 20min, and can be prepared by capacitance is 20 μ F
Polymer thin membrane capacitance.
Embodiment 2
The preparation of polymer thin membrane capacitance, specifically comprises the following steps that
Step 1,2 with step 1 described in embodiment 1,2 identical
The preparation of step 3 nanometer silver figure layer film 11: the driving voltage amplitude arranging piezo-activator 3 is 60V, drives
Dynamic frequency is 5Hz, and the kinematic parameter arranging two-dimentional work bench 9 makes drop Duplication be 60%, drives glass micro-nozzle
A, by the most on-demand for nano silver conductive ink micro-injection to the clean coverslip substrate surface processed, forms edge
More straight nanometer silver figure layer film 11, as shown in Figure 2 b；
The preparation of step 4 polymer thin membrane capacitance bottom conductive layer 12: preparation is had the coverslip of nanometer silver figure layer film
Substrate is placed in thermostatic drying chamber, sets sintering temperature as 140 DEG C, and sintering time is 25min, after sintering curing, and will
Substrate take out, can coverslip substrate surface prepare resistivity be 4.6 μ Ω .cm, the bottom surface length of side be the polymer of 8mm
The bottom conductive layer of thin-film capacitor, as shown in Figure 2 c；
Step 5 is identical with step 5 described in embodiment 1
It is 70V that step 6 arranges the driving voltage amplitude of piezo-activator 3, and driving frequency is 5Hz, arranges two-dimensional working
Platform 9 kinematic parameter makes drop Duplication be 60%, drives glass micro-nozzle b, is led to bottom by insulation inks micro-injection
In electric layer 12, can be prepared by the insulation inks figure layer film 15 that edge is more straight, as shown in Figure 2 d.
Preparation is had the coverslip substrate of insulation inks figure layer film 15 to be placed in thermostatic drying chamber by step 7, sets sintering
Temperature is 160 DEG C, and sintering time is 15min, after sintering curing, substrate is taken out, can be prepared by insulating properties higher
Thickness be 120 μm, the bottom surface length of side be the intermediate dielectric layer 16 of 8mm, as shown in Figure 2 e；
It is 60V that step 8 arranges the driving voltage amplitude of piezo-activator 3, and driving frequency is 5Hz, arranges two-dimensional working
The kinematic parameter of platform 9 makes drop Duplication be 60%, drives glass micro-nozzle a, and nano silver conductive ink is the most steady
Surely on-demand micro-injection, to intermediate dielectric layer surface, forms the nanometer silver figure layer film 15 that edge is more straight, as shown in figure 2f；
The preparation of step 9 thin polymer film capacitive head conductive layer 16: preparation is had the lid glass of nanometer silver figure layer film 15
Sheet substrate is placed in thermostatic drying chamber, sets sintering temperature as 140 DEG C, and sintering time is 25min, after sintering curing,
By substrate take out, can coverslip substrate surface prepare resistivity be 4.6 μ Ω .cm, the bottom surface length of side be the polymerization of 8mm
The bottom conductive layer of thing thin-film capacitor, as shown in Figure 2 g；
Step 10 sets annealing temperature as 50 DEG C, and the annealing time is 20min, and can be prepared by capacitance is 325 μ F
Polymer thin membrane capacitance.
Embodiment 3
The preparation of polymer thin membrane capacitance, specifically comprises the following steps that
Step 1,2 with step 1 described in embodiment 1,2 identical
The preparation of step 3 nanometer silver figure layer film 11: the driving voltage amplitude arranging piezo-activator 3 is 40V, drives
Dynamic frequency is 5Hz, and the kinematic parameter arranging two-dimentional work bench 9 makes drop Duplication be 70%, drives glass micro-nozzle
A, by the most on-demand for nano silver conductive ink micro-injection to the clean coverslip substrate surface processed, forms edge
More straight nanometer silver figure layer film 11, as shown in Figure 2 b；
The preparation of step 4 polymer thin membrane capacitance bottom conductive layer 12: preparation is had the coverslip of nanometer silver figure layer film
Substrate is placed in thermostatic drying chamber, sets sintering temperature as 140 DEG C, and sintering time is 25min, after sintering curing, and will
Substrate take out, can coverslip substrate surface prepare resistivity be 4.6 μ Ω .cm, the bottom surface length of side be the polymerization of 6.5mm
The bottom conductive layer of thing thin-film capacitor, as shown in Figure 2 c；
Step 5 is identical with step 5 described in embodiment 1
It is 60V that step 6 arranges the driving voltage amplitude of piezo-activator 3, and driving frequency is 5Hz, arranges two-dimensional working
Platform 9 kinematic parameter makes drop Duplication be 70%, drives glass micro-nozzle b, is led to bottom by insulation inks micro-injection
In electric layer 12, can be prepared by the insulation inks figure layer film 15 that edge is more straight, as shown in Figure 2 d.
Preparation is had the coverslip substrate of insulation inks figure layer film 15 to be placed in thermostatic drying chamber by step 7, sets sintering
Temperature is 160 DEG C, and sintering time is 15min, after sintering curing, substrate is taken out, can be prepared by insulating properties higher
Thickness be 105 μm, the bottom surface length of side be the intermediate dielectric layer 16 of 6.5mm, as shown in Figure 2 e；
It is 40V that step 8 arranges the driving voltage amplitude of piezo-activator 3, and driving frequency is 5Hz, arranges two-dimensional working
The kinematic parameter of platform 9 makes drop Duplication be 70%, drives glass micro-nozzle a, and nano silver conductive ink is the most steady
Surely on-demand micro-injection, to intermediate dielectric layer surface, forms the nanometer silver figure layer film 15 that edge is more straight, as shown in figure 2f；
The preparation of step 9 thin polymer film capacitive head conductive layer 16: preparation is had the lid glass of nanometer silver figure layer film 15
Sheet substrate is placed in thermostatic drying chamber, sets sintering temperature as 140 DEG C, and sintering time is 25min, after sintering curing,
Substrate is taken out, can coverslip substrate surface prepare resistivity be 4.6 μ Ω .cm, the bottom surface length of side be the poly-of 6.5mm
The bottom conductive layer of compound thin-film capacitor, as shown in Figure 2 g；
Step 10 sets annealing temperature as 50 DEG C, and the annealing time is 20min, and can be prepared by capacitance is 284 μ F
Polymer thin membrane capacitance.
Embodiment 4
The preparation of polymer thin membrane capacitance, specifically comprises the following steps that
Step 1,2,3,4,5,6,7 with step 1 described in embodiment 1,2,3,4,5,6,7 identical
Step 8 repeats step 6 and step 7, and number of repetition is 6, can be prepared by the higher thickness of insulating properties and is
The intermediate dielectric layer 16 of 500 μm
Step 9,10 with step 8 described in embodiment 1,9 identical
Step 10 sets annealing temperature as 50 DEG C, and the annealing time is 20min, and can be prepared by capacitance is 1203 μ F
Polymer thin membrane capacitance
Embodiment 5
The preparation of polymer thin membrane capacitance, specifically comprises the following steps that
Step 1,2,3,4,5,6,7,8,9 with embodiment 4 described in step 1,2,3,4,5,6,7,8,
9 is identical
Step 10 sets annealing temperature as 50 DEG C, and the annealing time is 10min, and can be prepared by capacitance is 765 μ F
Polymer thin membrane capacitance
In specific implementation process, the physical dimension of polymer thin membrane capacitance can by micro-nozzle internal diameter, driving voltage, Duplication,
The preparation number of plies and working table movement figure determine, the capacitance of the electric capacity prepared can be by the size of electric capacity, sintering condition with move back
Fire conditional decision.
Claims (5)
1. a thin polymer film capacitor fabrication method, it is characterised in that include specifically comprising the following steps that
Step 1.1, utilizes capillarity that nano silver conductive ink sucks glass micro-nozzle a；
Step 1.2, drives glass micro-nozzle a, by nano silver conductive ink micro-injection uniformly and stably to the clean lid processed
Slide substrate surface, forms the nanometer silver coated film that edge is more straight；
Step 1.3, by the nanometer silver coated film sintering curing of preparation, can prepare polymer at coverslip substrate surface
The bottom conductive layer of thin-film capacitor；
Step 1.4, sucks glass micro-nozzle b by poly-para-position vinylphenol insulation inks；
Step 1.5, drives glass micro-nozzle b, by poly-para-position vinylphenol insulation inks micro-injection uniformly and stably to poly-
The bottom conductive layer surface of compound thin-film capacitor, forms the insulation inks coated film that edge is more straight；
Step 1.6, by the insulation inks coated film sintering curing of preparation, can prepare polymerization at coverslip substrate surface
The intermediate dielectric layer of thing thin-film capacitor；
Step 1.7, drives glass micro-nozzle a, by the most on-demand for nano silver conductive ink micro-injection to polymer thin
The intermediate dielectric layer surface of membrane capacitance, forms the nanometer silver coated film that edge is more straight；
Step 1.8, is dried coverslip substrate, after sintering curing, substrate is taken out, can be in coverslip substrate
Surface prepares polymer thin membrane capacitance.
Thin polymer film capacitor fabrication method the most according to claim 1, it is characterised in that the micro-spray of described glass
Mouth a exit inside diameter is 50～80 μm, and the suction volume of silver ink is the 1/3～2/3 of micro-nozzle volume；Glass micro-nozzle b
Exit inside diameter is 80～120 μm, suction volume is micro-nozzle volume 1/2～the 2/3 of poly-para-position vinylphenol insulation inks.
Thin polymer film capacitor fabrication method the most according to claim 1, it is characterised in that step 1.2, step
1.5 and step 1.7 described in uniform and stable be to realize by arranging suitable driving voltage amplitude and driving voltage frequency
, driving voltage amplitude is set to 30～80V, and driving frequency is set as 5Hz；Edge is more directly by arranging suitably
Duplication realizes, and Duplication is set as 30%～70%.
Thin polymer film capacitor fabrication method the most according to claim 1, it is characterised in that step 1.3 and step
Sintering temperature described in 1.6 is 80～200 DEG C, and sintering time is 5～30min.
Thin polymer film capacitor fabrication method the most according to claim 1, it is characterised in that described in step 1.8
Sintering carry out at twice, be for the first time sintering curing, temperature is 80～200 DEG C, and the time is 5～30min, is for the second time
Sintering annealing, temperature is 50 DEG C, and the time is 20min.
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