CN106019854A - Pattern changeable electron beam photoetching machine - Google Patents
Pattern changeable electron beam photoetching machine Download PDFInfo
- Publication number
- CN106019854A CN106019854A CN201610566309.6A CN201610566309A CN106019854A CN 106019854 A CN106019854 A CN 106019854A CN 201610566309 A CN201610566309 A CN 201610566309A CN 106019854 A CN106019854 A CN 106019854A
- Authority
- CN
- China
- Prior art keywords
- system reference
- axle center
- electron
- electric field
- axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Abstract
The invention discloses a pattern changeable electron beam photoetching machine which comprises an electron-emitting gun, a constraining aperture, a plurality of constraining magnetic blocks, a magnetic field deflection coil, a deflection electric field generating device, a photoetching mask film and a wafer placing table which are mounted from top to bottom in sequence, wherein the electron-emitting gun is used for emitting electrons; the electron-emitting direction of the electron-emitting gun is taken as a system reference axis; the constraining aperture is mounted in the electron-emitting direction of the electron-emitting gun; the axis of the constraining aperture is coincided with the system reference axis; the constraining magnetic blocks are uniformly distributed at intervals around the system reference axis; the axis of the magnetic field deflection coil is coincided with the system reference axis; the deflection electric field generating device comprises an x axis direction electric field generating device and a y axis direction electric field generating device which are perpendicular to each other; the axis of the wafer placing table is coincided with the system reference axis. The photoetching mask film is arranged between the wafer placing table and an electron generating device, so that electron beams which are not in the photoetching pattern path can be blocked, and the photoetching precision can be effectively improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, be specifically related to the beamwriter lithography machine that a kind of figure is variable.
Background technology
In the prior art, in order to further pursue the precision of photoetching, often electron beam is used to replace dark purple
Outside line, photoengraving pattern on semiconductor chip.Fig. 1 is the principle signal of beamwriter lithography in prior art
Figure, as it is shown in figure 1, in the prior art, electron beam, under the constraint of electric field, is directly beaten at wafer (wafer)
On, the shortcoming of this kind of technology is, in order to pursue lithographic accuracy, electron beam must be very thin, the most aobvious and easy
Seeing, etching the biggest pattern, the speed of photoetching slows down.
Summary of the invention
For the deficiencies in the prior art, the invention discloses the beamwriter lithography machine that a kind of figure is variable.
Technical scheme is as follows:
1, the beamwriter lithography machine that a kind of figure is variable, including install the most successively:
One electron emission rifle；For launching electronics；The direction of electronics is launched as system reference with electron emission rifle
Axle center；
One constraint aperture；It is installed on the electron emission direction of described electron emission rifle, with axle center and system reference
Axle center coincides；
Multiple constraint magnetic piece；Around the evenly spaced distribution in described system reference axle center；
One magnetic core logical circuit deflection coil；Its axle center coincides with system reference axle center；
One deflecting electric field generator；Including mutually perpendicular x-axis direction electric field arrangement and y-axis direction electric field
Generator；
One photo etched mask；
One wafer mounting table；Its axle center and described system reference axis coinciding.
The method have the benefit that:
The present invention is provided with photo etched mask between wafer mounting table and electron generating, blocks not at light
Electron beam on needle drawing case path, can be effectively increased lithographic accuracy.And the present invention is provided with dual electronics road
Footpath constraint facility so that electronics by i.e. there being deflecting electric field on path, have again magnetic deflection field, can be more smart
The true direction controlling electronics.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of prior art.
Fig. 2 is the schematic diagram of the present invention.
Detailed description of the invention
Fig. 2 is the schematic diagram of the present invention.As in figure 2 it is shown, what the present invention included installing the most successively:
One electron emission rifle 1；For launching the electron beam for photoetching；And launch with electron emission rifle 1
The direction of electronics is system reference axle center.
One constraint aperture 2；It is installed on the electron emission direction of described electron emission rifle 1, with axle center and system
Coincide with reference to axle center.The electron beam that constraint aperture 2 is launched for electron emission rifle 1 retrains, and makes
Obtain electronics to advance at the route of regulation.
Multiple constraint magnetic piece 3；Around the evenly spaced distribution in described system reference axle center.Constraint magnetic piece 3 is right
Preliminary constraint is carried out so that electron beam is become boundling state from dispersity in electron beam.
One magnetic core logical circuit deflection coil 4；Its axle center coincides with system reference axle center；
One deflecting electric field generator 5；Including mutually perpendicular x-axis direction electric field arrangement and y-axis direction electricity
Field generator.
Magnetic core logical circuit deflection coil 4 and deflecting electric field generator 5 coordinate jointly, and electron beam is produced fine pact
Bundle.Magnetic core logical circuit deflection coil 4 can produce the constraint of the first order to electronics, controls electronic deflection, for electronics
Tendency direction make restriction.Deflecting electric field generator 5 is then on the basis of magnetically confined, to electronics
Produce the second level, finer constraint, the abscissa of the trend of considered critical electronics and vertical coordinate, make
Electronics trend substantially with the pattern registration of photoetching to be carried out.
One photo etched mask 6；The detailed pattern of photoetching it is provided with on photo etched mask 6.Due to photo etched mask 6
On have detailed photoengraving pattern, even if so electron beam is relatively large in diameter, it is also possible to obtain fine light needle drawing
Case, without crossing the border, etches into the region being made without photoetching.
One wafer mounting table 7；Its axle center and described system reference axis coinciding.
Above-described is only the preferred embodiment of the present invention, the invention is not restricted to above example.Permissible
Understanding, those skilled in the art the most directly derive or associate
The oher improvements and changes arrived, within being all considered as being included in protection scope of the present invention.
Claims (1)
1. the beamwriter lithography machine that a figure is variable, it is characterised in that include installing the most successively
:
One electron emission rifle (1)；For launching electronics；The direction of electronics is launched with electron emission rifle (1)
For system reference axle center；
One constraint aperture (2)；It is installed on the electron emission direction of described electron emission rifle (1), with axle center
Coincide with system reference axle center；
Multiple constraint magnetic piece (3)；Around the evenly spaced distribution in described system reference axle center；
One magnetic core logical circuit deflection coil (4)；Its axle center coincides with system reference axle center；
One deflecting electric field generator (5)；Including mutually perpendicular x-axis direction electric field arrangement and y-axis direction
Electric field generating apparatus；
One photo etched mask (6)；Cover identical with photoengraving pattern it is provided with on described photo etched mask (6)
Film figure.
One wafer mounting table (7)；Its axle center and described system reference axis coinciding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610566309.6A CN106019854A (en) | 2016-07-18 | 2016-07-18 | Pattern changeable electron beam photoetching machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610566309.6A CN106019854A (en) | 2016-07-18 | 2016-07-18 | Pattern changeable electron beam photoetching machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106019854A true CN106019854A (en) | 2016-10-12 |
Family
ID=57118097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610566309.6A Pending CN106019854A (en) | 2016-07-18 | 2016-07-18 | Pattern changeable electron beam photoetching machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106019854A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1351756A (en) * | 1999-04-07 | 2002-05-29 | Ut-巴特勒有限责任公司 | Electrostatically focused addressable field emission arraychips (AFEA' s) for high-speed maskless digital e-beam direct write lithography and scanning electron microscopy |
| CN1522390A (en) * | 2002-07-03 | 2004-08-18 | Pd������ʽ���� | Electron beam exposure method and system therefor |
| CN1708826A (en) * | 2002-10-30 | 2005-12-14 | 迈普尔平版印刷Ip有限公司 | Electron beam exposure system |
| US20130011797A1 (en) * | 2011-07-08 | 2013-01-10 | Canon Kabushiki Kaisha | Charged particle beam drawing apparatus and article manufacturing method |
-
2016
- 2016-07-18 CN CN201610566309.6A patent/CN106019854A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1351756A (en) * | 1999-04-07 | 2002-05-29 | Ut-巴特勒有限责任公司 | Electrostatically focused addressable field emission arraychips (AFEA' s) for high-speed maskless digital e-beam direct write lithography and scanning electron microscopy |
| CN1522390A (en) * | 2002-07-03 | 2004-08-18 | Pd������ʽ���� | Electron beam exposure method and system therefor |
| CN1708826A (en) * | 2002-10-30 | 2005-12-14 | 迈普尔平版印刷Ip有限公司 | Electron beam exposure system |
| US20130011797A1 (en) * | 2011-07-08 | 2013-01-10 | Canon Kabushiki Kaisha | Charged particle beam drawing apparatus and article manufacturing method |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161012 |
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| WD01 | Invention patent application deemed withdrawn after publication |