CN106019183A - Magnetic sensor and magnetic encoder - Google Patents
Magnetic sensor and magnetic encoder Download PDFInfo
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- CN106019183A CN106019183A CN201610108583.9A CN201610108583A CN106019183A CN 106019183 A CN106019183 A CN 106019183A CN 201610108583 A CN201610108583 A CN 201610108583A CN 106019183 A CN106019183 A CN 106019183A
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- resistance effect
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/091—Constructional adaptation of the sensor to specific applications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/244—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing characteristics of pulses or pulse trains; generating pulses or pulse trains
- G01D5/245—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing characteristics of pulses or pulse trains; generating pulses or pulse trains using a variable number of pulses in a train
- G01D5/2454—Encoders incorporating incremental and absolute signals
- G01D5/2455—Encoders incorporating incremental and absolute signals with incremental and absolute tracks on the same encoder
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention provides a magnetic sensor and a magnetic encoder. The magnetic sensoris provided with two kinds of magnetoresistive effect elements which are required for different response characteristics, and the different response characteristics of the magnetoresistive effect elements are improved together. The magnetic sensor (1) is provided with first and second magnetoresistive effect elements (31, 41) that can detect an external magnetic field. The first and second magnetoresistive effect elements are a plurality of layers of multilayer body including free layers (315, 415) where their magnetization directions vary due to the external magnetic field. Shapes of the first and second magnetoresistive effect elements viewed from the upper side in the lamination direction are different from each other. The first magnetoresistive effect element has a shape that can increase a slope of an output of the first magnetoresistive effect element relative to the change of the external magnetic field. The second magnetoresistive effect element has a shape that can decrease a slope of an output of the second magnetoresistive effect element relative to the change of the external magnetic field compared to the slope of the output of the first magnetoresistive effect element.
Description
Technical field
The present invention relates to Magnetic Sensor and possess the magnetic encoder of this Magnetic Sensor.
Background technology
At present, in work mechanism etc., use for detection according to the in rotary moving of moving body or
The position detecting device of the position of rectilinear movement.As this position detecting device, it is known that tool
Memorandum has the medium of magnetic signal and the position detecting device of Magnetic Sensor, by Magnetic Sensor,
The signal output of the relative position relation of medium and Magnetic Sensor can be would indicate that.
As the Magnetic Sensor used in this position detecting device, it is known that one has
Free layer and the duplexer of magnetization fixed layer, it possesses resistance along with external magnetic field accordingly freely
The change of the direction of magnetization of layer and the magneto-resistance effect element (MR element) that changes.It addition, conduct
The medium used in this position detecting device, it is known that there is absolute signal signal tracks
The medium in road, there is the medium of increment signal signal track, there is absolute signal signal tracks
Road and the medium etc. of increment signal signal track.
Since, as possessing, there is absolute signal signal track and increment signal signal track
The Magnetic Sensor that used of the position detecting device of medium, motion is to have for detecting note
Record in the MR element of magnetic signal of absolute signal signal track and be recorded in increment for detection
Magnetic Sensor (the ginseng of MR element both MR elements of the magnetic signal of signal signal track
According to patent documentation 1).
Prior art literature
Patent documentation
Patent documentation 1: JP 2001-264112 publication
Invent problem to be solved
In above-mentioned Magnetic Sensor, it is recorded in the magnetic letter of absolute signal signal track for detection
Number MR element be required corresponding to along with medium relative movement produce magnetic field change and
There is output characteristic jumpy (response characteristic).On the other hand, it is recorded in increasing for detection
It is relative that the MR element of magnetic signal of amount signal signal track is required corresponding to along with medium
Move and produce the change in magnetic field and there is the characteristic (response characteristic) of output linearity change.
So, about two kinds of MR elements that required response characteristic is different, in recent years, just
In the raising being required the response characteristics such as further high sensitivity, low noise.At present,
Attempt the material of each layer such as free layer by constituting MR element or the thickness etc. of this each layer
Optimize, improve above-mentioned response characteristic.But, attempted by these, exist and be very difficult to
The problem improving above-mentioned response characteristic further.
Summary of the invention
In view of above-mentioned problem, it is an object of the invention to, it is provided that a kind of Magnetic Sensor and magnetic are compiled
Code device, it has the two kinds of magneto-resistance effect elements being required different response characteristic, it is possible to
Together improve the different response characteristic required by each magneto-resistance effect element.
For solving the technical scheme of problem
In order to solve above-mentioned problem, the present invention is to provide one and at least possess and can detect outside
First magneto-resistance effect element in magnetic field and the Magnetic Sensor of the second magneto-resistance effect element, wherein, institute
State the first magneto-resistance effect element and described second magneto-resistance effect element is including at least magnetization side respectively
To the duplexer of the multilamellar of the free layer changed according to described external magnetic field, from stacked direction
Top observes the most described free layer of described first magneto-resistance effect element and described second magnetic respectively
During the most described free layer of inhibition effect element, two free layers have different shape, from
Described first magnetoresistance unit when observing above the stacked direction of described first magneto-resistance effect element
The most described free layer of part shape be to make the institute of change with described external magnetic field
The shape that the slope of the output stating the first magneto-resistance effect element increases, from described second magnetoresistance
The most described freedom of described second magneto-resistance effect element when observing above the stacked direction of element
The shape of layer is to make described second magneto-resistance effect element of the change with described external magnetic field
Output slope ratio described in the little shape (invention of the slope of output of the first magneto-resistance effect element
1)。
According to foregoing invention (invention 1), by the big (exporting change of slope that will be required output
For drastically) the first magneto-resistance effect element and be required output slope smaller (output become
Turn to linear) the shape of respective free layer of the second magneto-resistance effect element (from stacked direction
Shape when top is observed) it is set as being suitable for the shape of respective response characteristic, it is possible to together carry
The different response characteristic being each required of first and second magneto-resistance effect element high.
In foregoing invention (invention 1), can at least described by described first magneto-resistance effect element
The described shape of free layer is set to M+N limit shape, and (M is the integer of more than 3, and N is more than 1
Integer), and the described shape of the most described free layer of described second magneto-resistance effect element is set
For M limit shape (invention 2)；The most described free layer of described first magneto-resistance effect element described
It is preferably shaped to M+N limit shape (M is the even number of more than 4, and N is the even number of more than 2), institute
State be preferably shaped to described in the most described free layer of the second magneto-resistance effect element M limit shape (send out
Bright 3)；Be preferably shaped to described in the most described free layer of described second magneto-resistance effect element to
There is the shape (invention 4) on relative two limit being parallel to each other less.
It addition, in foregoing invention (invention 1), can by described first magneto-resistance effect element extremely
The described shape of few described free layer is set to circular shape, and by described second magnetoresistance unit
The described shape of the most described free layer of part is set to general square shape shape (invention 5).
In foregoing invention (invention 1～5), as described first magneto-resistance effect element and described
Second magneto-resistance effect element, can use TMR element or GMR element (invention 6)；Above-mentioned
In invention (invention 1～6), described first magneto-resistance effect element and described second magnetoresistance unit
Part is preferably sequentially laminated with magnetization fixed layer, nonmagnetic intermediate layer and described free layer (invention 7).
In foregoing invention (invention 7), described nonmagnetic intermediate layer be preferably MgOx (X=0.1～
0.9) (invention 8).In foregoing invention (invention 7,8), described nonmagnetic intermediate layer is preferred
For the duplexer (invention 9) including at least the first nonmagnetic intermediate layer and the second nonmagnetic intermediate layer.
It addition, the present invention is to provide a kind of magnetic encoder, it possess foregoing invention (invention 1～
9) Magnetic Sensor, there is record there are the absolute signal track of absolute magnetic signal and record to have increment
The increment signal track of magnetic signal and relative to described Magnetic Sensor relatively-movable scale portion,
Relative to each other with described first magneto-resistance effect element and described absolute signal track, and described second
Magneto-resistance effect element and described increment signal track mode relative to each other are relatively provided with described magnetic
Sensor and described scale portion (invention 10).
Invention effect
In accordance with the invention it is possible to provide a kind of Magnetic Sensor and magnetic encoder, it has is wanted
Seek two kinds of magneto-resistance effect elements of different response characteristic, it is possible to together improve each magnetic resistance effect
Answer the different response characteristic required by element.
Accompanying drawing explanation
Fig. 1 is the magnetic encoder representing the Magnetic Sensor possessing an embodiment of the invention
Summary constitute axonometric chart；
Fig. 2 is the vertical view of the summary composition of the Magnetic Sensor representing an embodiment of the invention
Figure；
Fig. 3 is that other summaries of the Magnetic Sensor representing an embodiment of the invention are constituted
Top view；
Fig. 4 is the first magneto-resistance effect element and the second magnetic representing an embodiment of the invention
The profile that the summary of inhibition effect element is constituted；
Fig. 5 is the effect for the first magneto-resistance effect element to an embodiment of the invention
The axonometric chart (its 1) illustrated；
Fig. 6 is the effect for the second magneto-resistance effect element to an embodiment of the invention
The axonometric chart (its 1) illustrated；
Fig. 7 is the effect for the first magneto-resistance effect element to an embodiment of the invention
The axonometric chart (its 2) illustrated；
Fig. 8 is the effect for the second magneto-resistance effect element to an embodiment of the invention
The axonometric chart (its 2) illustrated；
Fig. 9 is that the output of the first magneto-resistance effect element representing an embodiment of the invention becomes
The curve chart changed；
Figure 10 is that the output of the second magneto-resistance effect element representing an embodiment of the invention becomes
The curve chart changed；
Figure 11 is the magnetic encoder representing the Magnetic Sensor possessing an embodiment of the invention
Other summaries constitute axonometric chart；
Symbol description
1 ... Magnetic Sensor
2 ... substrate
3 ... the first Magnetic Sensor
31 ... a MR element
315,415 ... free layer
32,42 ... bias magnetic field generating unit
4 ... the second Magnetic Sensor
41 ... the 2nd MR element
10 ... magnetic encoder
20 ... scale portion
Detailed description of the invention
Referring to the drawings embodiments of the present invention are described in detail.Fig. 1 is to represent possess this
The axonometric chart that the summary of the magnetic encoder of the Magnetic Sensor of embodiment is constituted, Fig. 2 is to represent
The top view that the summary of the Magnetic Sensor of present embodiment is constituted, Fig. 3 is to represent present embodiment
Magnetic Sensor other summaries constitute top view, Fig. 4 is the magnetic resistance representing present embodiment
The profile that the summary of response element is constituted.
As it is shown in figure 1, the magnetic encoder 10 of present embodiment possesses: the magnetic of present embodiment
Sensor 1, can in the first direction (following, be sometimes referred to as " X-direction ") relative to Magnetic Sensor 1
Scale (scale) portion 20 of movement.
In the present embodiment, scale portion 20 is so-called linear scale, has: record has
The absolute signal track (absolute signal track) 21 of absolute magnetic signal, record have increment magnetic to believe
Number increment signal track (incremental signal track) 22.Absolute magnetic signal and increment magnetic letter
Number difference (± X-direction) in the first direction is magnetized.Additionally, in FIG, absolute magnetic signal
And the direction of magnetization of increment magnetic signal is the most indicated by an arrow.
As in figure 2 it is shown, the Magnetic Sensor 1 of present embodiment possesses substrate 2 and is arranged at substrate 2
On a first Magnetic Sensor portion 3 and two the second Magnetic Sensor portions 4,4.First magnetic sensing
Device portion 3 is the absolute magnetic signal of the absolute signal track 21 being recorded in scale portion 20 for detection
Magnetic Sensor.Second Magnetic Sensor portion 4 is the increment letter being recorded in scale portion 20 for detection
The Magnetic Sensor of the increment magnetic signal of number track 22.
First Magnetic Sensor portion 3 possesses the first magneto-resistance effect element (MR of spin valve type
Element) 31, in the way of clipping a MR element 31, be arranged at a MR element 31
The bias magnetic field generating unit 32 of second direction (following, to be sometimes referred to as Y-direction) both sides.Two
Second Magnetic Sensor portion 4,4 possesses the second magneto-resistance effect element (second of spin valve type respectively
MR element) 41, in the way of clipping the 2nd MR element 41, be arranged at the 2nd MR element 41
The bias magnetic field generating unit 42 of Y-direction both sides.
Substrate 2 is can together to support the first Magnetic Sensor portion 3 and square in the second Magnetic Sensor portion 4
The substrate of shape, such as can be by glass, silicon (Si), aluminium oxide (Al2O3)、AlTiC(Al2O3
-TiC) etc. constitute.
In the present embodiment, detection be recorded in absolute signal track 21 absolute magnetic signal the
One MR element 31, has and produces corresponding to the relative movement according to this track 21 (scale portion 20)
The change of raw external magnetic field and export response characteristic jumpy.On the other hand, detection note
Record the 2nd MR element 41 of increment magnetic signal in increment signal track 22, have corresponding to root
The change of external magnetic field that produces according to the relative movement of this track 22 (scale portion 20) and output lead
Property change response characteristic.That is, the slope ratio second of the output that the oneth MR element 31 realizes
The slope of the output that MR element 41 realizes is big.Such as, in external magnetic field-50～50Oe
In the range of be changed in the case of, the slope of the output of a MR element 31 is 10mV/
The degree of more than Oe.On the other hand, the slope of the output of the 2nd MR element 41 is 2～5mV
The degree of/Oe.Oneth MR element 31 and the 2nd MR element 41 are by by from their layer
Shape when top, folded direction (Z-direction) is observed is respectively prepared and can make output shape jumpy
And can the shape of linear change, it is possible to effectively play different response characteristic.
More specifically, as in figure 2 it is shown, when a MR element 31 above stacked direction
Shape substantially circular in shape during observation, and the sight above stacked direction of the 2nd MR element 41
When examining when being shaped as general square shape shape, a MR element 31 and the 2nd MR element 41 are just
Can effectively play the response characteristic being each required.Additionally, in the present embodiment, " big
Cause toroidal " in addition to comprising positive round shape, also comprise minor axis for major diameter be 70% with
On toroidal.It addition, " general square shape shape ", in addition to comprising square, rectangle, also wraps
The quadrilateral shape of 85～95 ° it is containing four interior angles.
It addition, as it is shown on figure 3, a MR element 31 and the 2nd MR element 41 from layer
Shape when observing above folded direction is polygon-shaped, the limit number of a MR element 31 ratio the
The limit number of two MR elements 41 many (in the example shown in Fig. 3, a MR element 31
The above-mentioned hexagon shape that is shaped as, the 2nd the above-mentioned of MR element 41 is shaped as quadrilateral shape), by
This MR element 31 and the 2nd MR element 41 also are able to effectively to play different
Response characteristic.That is, the above-mentioned shape of the oneth MR element 31 can also be M+N limit shape,
The above-mentioned shape of the 2nd MR element 41 can also (M be preferably more than 3 for M limit shape
Integer, the integer of particularly preferably more than 5.N is preferably the integer of more than 1).Thus,
It is special that one MR element 31 and the 2nd MR element 41 can play different response effectively
Property.
Preferably the 2nd MR element 41 be shaped as M limit shape (M is the even number of more than 4),
More preferably positive M limit shape (M is the even number of more than 4).As described later, the 2nd MR unit
Part 41 is set to than a MR element 31 closer to bias magnetic field generating unit 42.Therefore, logical
That crosses the 2nd MR element 41 is shaped as M limit shape (M is the even number of more than 4), particularly
Positive M limit shape (M is the even number of more than 4), at the stacked direction from the 2nd MR element 41
When top is observed, it is possible to make relative two limit of the 2nd MR element 41, particularly second
MR element 41 be shaped as the 2nd MR during positive M limit shape (M is the even number of more than 4)
Relative parallel two limit of element 41 is relative with bias magnetic field generating unit 42 respectively.This knot
Fruit it is possible to reduce length G2 between the 2nd MR element 41 and bias magnetic field generating unit 42,
Easily the entirety substantially evenly additional biasing magnetic field generating unit 42 of the 2nd MR element 41 is produced
Raw bias magnetic field, so preferably M is the even number of more than 4 on manufacturing.
Bias magnetic field generating unit 32,42 is such as made up of permanent magnet, with free layer 315,415
(external magnetic field is free layer time zero (zero magnetic field) in the initial magnetization direction of (with reference to Fig. 4)
315, magnetization 315M, 415M of 415 entirety) towards regulation direction (in present embodiment
In, for Y-direction) mode bias magnetic field is put on free layer 315,415.
Length G1 preferably ratio second between oneth MR element 31 and bias magnetic field generating unit 32
Length G2 between MR element 41 and bias magnetic field generating unit 42 is big, length G1 and length
G2 all suitably can set in the range of 0～5 μm.Because it is bigger than length G2 by length G1,
The strength ratio of the bias magnetic field being additional to a MR element 31 is additional to the 2nd MR element 41
The intensity of bias magnetic field little, it is possible to the output that makes to realize from a MR element 31
Change more drastically, on the other hand, it is possible to makes the output from the 2nd MR element 41 realization
Change more linear.Additionally, between a MR element 31 and bias magnetic field generating unit 32
Length G1 refers to when the vertical view of Magnetic Sensor 1 (in the stacking side from a MR element 31
When observing upward), in the Y-direction of a MR element 31 and bias magnetic field generating unit 32
The shortest interval.Length G2 between 2nd MR element 41 and bias magnetic field generating unit 42 is also same
Sample, refer in the Y-direction of the 2nd MR element 41 and bias magnetic field generating unit 42 the shortest between
Every.
Then, the lit-par-lit structure of a MR element 31 and the 2nd MR element 41 is said
Bright.
As shown in Figure 4, a MR element 31 and the 2nd MR element 41 are to be sequentially laminated with
Basal layer 311,411, antiferromagnetic layer 312,412, magnetization fixed layer 313,413, non-magnetic
Property intermediate layer 314,414, free layer 315,415 and the duplexer of cover cap layer 316,416.
Divide on lower floor (substrate 2 side) and the upper strata of cover cap layer 316,416 of basal layer 311,411
It is not provided with the lower electrode layer and top electrode layer (the most not shown) being made up of Cu film etc., along
Oneth MR element 31 and the stacked direction sense of movement induced current of the 2nd MR element 41.
Basal layer 311,411 is the impact of the crystallographic axis for getting rid of substrate 2, and improves stratification
Crystallinity and the orientation of each layer in the top of basal layer 311,411 and formed.As structure
Become the material of basal layer 311,411, such as, can enumerate Ta, Ru etc..
Antiferromagnetic layer 312,412 is the magnetization fixed layer 313,413 playing and being fixed thereon layer
The layer of effect of the direction of magnetization.As the material of composition antiferromagnetic layer 312,412, such as
Can use containing at least in Pt, Ru, Rh, Pd, Ni, Cu, Ir, Cr and Fe
Plant element and the antiferromagnetic materials of Mn.The content of the Mn of these antiferromagnetic materials is preferably
35～95 atom %.
In antiferromagnetic materials, have without heat treatment just display anti-ferromagnetism and with strong magnetic
Property material between induce exchange coupling magnetic field non-heat treated system antiferromagnetic materials and by heat
Process and show anti-ferromagnetic heat treatment system antiferromagnetic materials.In the present embodiment, make
For constituting the material of antiferromagnetic layer 312,412, it is possible to use any one type antiferromagnetic
Property material.As non-heat treated system antiferromagnetic materials, RuRhMn, FeMn, IrMn can be enumerated
Deng, as heat treatment system antiferromagnetic materials, PtMn, NiMn, PtRhMn etc. can be enumerated.
Magnetization fixed layer 313,413 has and is sequentially laminated with in antiferromagnetic layer 312,412
First magnetization fixed layer 313A, 413A, intermediate layer 313B, 413B and the second magnetization fixed layer
The structure of 313C, 413C.As constituting first magnetization fixed layer 313A, 413A and the second magnetic
Change fixed layer 313C, 413C material, can illustrate NiFe, CoZrTa, Sendust,
NiFeCo, CoZrNb, CoFe, CoFeB etc., as constituting intermediate layer 313B, 413B
Material, can illustrate Ru etc..The thickness of magnetization fixed layer 313,413 can be set to 3.5～5.5nm
Degree.
In magnetization fixed layer 313,413, the magnetization of first magnetization fixed layer 313A, 413A
Firmly fixed, second magnetization fixed layer 313C, 413C by antiferromagnetic layer 312,412
Magnetization exchange coupling via intermediate layer 313B, 413B and first magnetization fixed layer 313A, 413A
Close, and firmly fix.In the present embodiment, second magnetization fixed layer 313C, 413C
The direction of magnetization be set as X-direction.
Free layer 315,415 is that the direction of magnetization is according to along with the relative movement in scale portion 20
Absolute magnetic signal and the change in signal magnetic field of increment magnetic signal and the soft ferromagnetic layer that changes.Make
For constitute free layer 315,415 material, can illustrate NiFe, CoFe, CoFeB, CoFeNi,
Co2MnSi、Co2MnGe, FeOx (oxide of Fe) etc..The thickness of free layer 315,415
Degree can be set to 0.5～8nm degree.The initial magnetization direction of free layer 315,415 by from
The applying of the bias magnetic field of bias magnetic field generating unit 32,42, and it is set as Y-direction.
Nonmagnetic intermediate layer 314,414 is for the MR element 31 in present embodiment
And the 2nd required film embodying magnetoresistance (MR effect) on MR element 41.In this reality
A MR element 31 and the 2nd MR element 41 of executing mode are to play tunnel magneto-resistance effect
In the case of TMR element, nonmagnetic intermediate layer 314,414 is made up of insulating barrier.The opposing party
Face, a MR element 31 and the 2nd MR element 41 in present embodiment are GMR unit
In the case of part, nonmagnetic intermediate layer is made up of metal level.As constitute nonmagnetic intermediate layer 314,
The material of 414, such as can enumerate Cu, Au, Ag, Zn, Ga, TiOx, ZnO, InO,
SnO、GaN、ITO(IRdium Tin Oxide)、Al2O3, MgO etc..This embodiment party
In the case of oneth MR element 31 of formula and the 2nd MR element 41 are TMR element, as
Constitute the material of nonmagnetic intermediate layer 314,414, MgOx (X=0.1～0.9) is preferably used.
By using MgOx (X=0.1～0.9) as the material constituting nonmagnetic intermediate layer 314,414
Material, available higher MR ratio.
Nonmagnetic intermediate layer 314,414 is preferably made up of stacked film more than two-layer.By non-
Magnetic central layer 314,414 is made up of stacked film more than two-layer, it is possible to easily carry out MR unit
The resistance adjustment of part.Such as, nonmagnetic intermediate layer 314,414 can be by the two of MgO/MgO
The trilaminate film of layer stackup film or Cu/ZnO/Cu, Cu/ZnO/Zn is constituted.Additionally,
The thickness of nonmagnetic intermediate layer 314,414 can be set to the degree of 0.5～5nm.
Cover cap layer 316,416 is for protection the oneth MR element 31 and the 2nd MR element 41
Layer.As cover cap layer 316,416, such as, can enumerate: Ta, Ru, Cu, Ag, Rh,
A kind of monofilm in Cr, T1, Re, Ir, Mo, W, Ti etc. or two or more stacked films.
Effect to the magnetic encoder 10 of the present embodiment with structure as above is carried out
Explanation.
In a MR element 31, for free layer 315 and magnetization fixed layer 313, two
Magnetization 315M, 313M of person are the most orthogonal (with reference to Fig. 5).This state is as
The original state (initial state) of one MR element 31.In the 2nd MR element 41, also
Equally, for free layer 415 and magnetization fixed layer 413, both magnetization 415M, 413M
The most orthogonal (with reference to Fig. 6).
When the Magnetic Sensor 1 of present embodiment relative to scale portion 20 along-X direction relative movement
Time, by the absolute magnetic signal of absolute magnetic signal track 21 free layer to a MR element 31
The magnetic field intensity of the external magnetic field of 315 effects will gradually change.Such as, along with Magnetic Sensor 1
And scale portion 20 moves relative to each other, and a MR element 31 and absolute magnetic signal track 21
Absolute magnetic signal between physical distance diminish, and the free layer 315 to a MR element 31
The magnetic field intensity of the external magnetic field of effect is gradually increased.By a MR unit of present embodiment
The free layer 315 of part 31 for can make output along with the change of external magnetic field shape jumpy
Shape, i.e. can make the shape that magnetization drastically rotates, in external magnetic field relative to free layer 315
When magnetic field intensity exceedes the threshold value of regulation, the magnetization 315M substantially half-twist of free layer 315
(with reference to Fig. 7).That is, the resistance value of the first Magnetic Sensor 3 (a MR element 31) is drastically
Increasing (or reduction), the output of a MR element 31 drastically changes (with reference to Fig. 9).Thus,
It is capable of the high-precision detection of absolute position.
In the magnetic encoder 10 of present embodiment, by a MR element 31 from layer
It is shaped as such as circular shape, it is possible to make a MR element 31 when observing above folded direction
Output change sharp.
On the other hand, when the Magnetic Sensor 1 of present embodiment relative to scale portion 20 along-X direction
During relative movement, the increment magnetic signal of increment magnetic signal track 22 external magnetic field produced is relative
Magnetic field intensity in the free layer 415 of the 2nd MR element 41 will gradually change.By this reality
The free layer 415 of the 2nd MR element 41 executing mode is to make output along with the change of external magnetic field
The shape changed and change linearly, i.e. make the shape that magnetization substantially rotates with certain speed
Shape, so that the magnetization 415M of free layer 415 is along with external magnetic field is relative to free layer 415
The change of magnetic field intensity and gradually rotate (with reference to Fig. 8).That is, the second Magnetic Sensor 4 (
Two MR elements 41) resistance value be gradually increased or reduce, the output lead of the 2nd MR element 41
Property ground change (with reference to Figure 10).Thereby, it is possible to realize the high-precision detection of incremental counter.
In the magnetic encoder 10 of present embodiment, by the 2nd MR element 41 from layer
It is shaped as such as general square shape shape, it is possible to make the 2nd MR element 41 when observing above folded direction
The output linearity ground change realized.
So, according to the Magnetic Sensor 1 of present embodiment, by for detecting absolute magnetic signal
Oneth MR element 31 and the 2nd MR element 41 for detecting increment magnetic signal are respectively provided with
Desired shape (shape when observing above stacked direction), it is possible to effectively play each
The response characteristic (linear change drastically changing, exporting of output) being required.Thus, according to
Possesses the magnetic encoder 10 of this Magnetic Sensor 1, it is possible to the most more precisely detection is definitely
The absolute position of magnetic signal and the incremental counter of increment magnetic signal.
Embodiments described above, for ease of understanding that the present invention records, is not for limiting
The present invention and record.Therefore, objective is that disclosed in above-mentioned embodiment, each element also comprises genus
Whole design alterations of technical scope or equipollent in the present invention.
In the above-described embodiment, MR element 31 and a shape for the 2nd MR element 41
(shape when observing above stacked direction) is respective to be required characteristic corresponding shape (example
As, a MR element 31 is circular shape, and the 2nd MR element 41 is general square shape shape
Deng), but the present invention is not limited to this mode.Such as, if at least free layer 315,415
Having this shape, the shape of other each layers (magnetization fixed layer 313,413 etc.) does not limit
System.
In the above-described embodiment, as magnetic encoder 10, to have and Magnetic Sensor 1 phase
To the linear biography of magnetic signal track (absolute magnetic signal track 21 and increment magnetic signal track 22)
It is illustrated as a example by sensor, but the present invention is not limited to this mode.The magnetic of the present invention is compiled
Code device can also be angular sensor.In this case, as shown in figure 11, as long as
Possess the outer peripheral face 51 at drum type rotary body 50 and be provided with absolute magnetic signal track 21 ' and increment magnetic letter
The scale portion 20 ' of number track 22 ' and the structure of the Magnetic Sensor 1 of present embodiment.
In the above-described embodiment, sensor 1 possesses MR element 31 and a 2nd MR unit
Each one of part 41, but the present invention is not limited to this mode, such as, the first Magnetic Sensor portion 3
And second Magnetic Sensor portion 4 can also comprise a multiple MR element 31 and the 2nd MR respectively
Element 41.
[embodiment]
Below, the present invention is described in detail further to enumerate embodiment etc., but the present invention is not
By any restrictions such as following embodiments.
(embodiment 1)
Si substrate 2 makes the shape observed above stacked direction and is respectively toroidal and just
Square shape and there is MR element 31 and a 2nd MR element 41 of the Rotating fields shown in Fig. 4,
And manufacture the Magnetic Sensor 1 being provided with the permanent magnet as bias magnetic field generating unit 32,42.
The diameter of the oneth MR element 31 is set to 1.6 μm, by a MR element 31 and biasing magnetic
Length G1 between generating unit 32 is set to 0.4 μm, by the 2nd MR element 41
Length is set to 2.8 μm, by the length between the 2nd MR element 41 and bias magnetic field generating unit 42
G2 is set to 0 μm.Then, to a MR element 31 and the 2nd MR element 41 difference
Apply the constant current of voltage 1V, make external magnetic field strength in the range of-10～10Oe
Change and make this external magnetic field act on MR element 31 and a 2nd MR element 41, obtain
Oneth MR element 31 and the sensitivity (mV/Oe) of the 2nd MR element 41.By result table
Show in table 2.
Additionally, constitute each layer of a MR element 31 and the 2nd MR element 41 material and
Thickness is as shown in table 1.
(table 1)
(comparative example 1)
The shape (shape observed above stacked direction) of the 2nd MR element 41 is made
Toroidal, and by the length between diameter and the 2nd MR element 41 and bias magnetic field generating unit 42
Degree G2 makes identical with the diameter of a MR element 31 and length Gl, in addition, with reality
Execute example 1 same, make MR element 31 and a 2nd MR element 41, obtain respective
The sensitivity (mV/Oe) of MR element.The results are shown in table 2.
(comparative example 2)
The shape (shape observed above stacked direction) of the oneth MR element 31 is made
Square shape, and by length and a MR element 31 and bias magnetic field generating unit 32
Between length G1 make identical with the diameter of the 2nd MR element 41 and length G2, another
Aspect, makes the shape (shape observed above stacked direction) of the 2nd MR element 41
Circular shape, and by between diameter and the 2nd MR element 41 and bias magnetic field generating unit 42
Length G2 is made identical with the diameter of a MR element 31 and length G1, in addition,
Similarly to Example 1, make MR element 31 and a 2nd MR element 41, obtain each
The sensitivity (mV/Oe) of MR element.The results are shown in table 2.
(comparative example 3)
The shape (shape observed above stacked direction) of the oneth MR element 31 is made
Square shape, and by length and a MR element 31 and bias magnetic field generating unit 32
Between length G1 make identical with the diameter of the 2nd MR element 41 and length G2, except this
In addition, similarly to Example 1, make MR element 31 and a 2nd MR element 41, ask
Go out the sensitivity (mV/Oe) of respective MR element.The results are shown in table 2.
[table 2]
Result as shown in Table 2 can confirm that, by by the shape of a MR element 31 (from layer
The shape observed above folded direction) it is set to toroidal, and by the shape of the 2nd MR element 41
(shape observed above stacked direction) is set to square shape, it is possible to make a MR unit
The slope (mV/Oe) of the output of part 31 is than the slope (mV of the output of the 2nd MR element 41
/ Oe) big, the output of a MR element 31 can be made drastically to change, and the 2nd MR unit can be made
The output linearity ground change of part 41.
It follows that use embodiment 1, (a MR element 31 is toroidal, the 2nd MR unit
Part 41 is square shape) Magnetic Sensor 1 and comparative example 1 (a MR element and second
MR element is toroidal) Magnetic Sensor, make external magnetic field in the range of-50～50Oe
Change, obtains respective exporting change amount (maximum output and the minimum output of the 2nd MR element
Difference, mV).Then, according to making external magnetic field second when the range of-10～10Oe
Exporting change amount MP1 (mV) of MR element and make external magnetic field-50～50Oe scope
Exporting change amount MP2 (mV) of the 2nd MR element during interior change, by following formula, meter
Calculate index IL relevant to rectilinearity.The results are shown in table 3.
IL=MP2/MP1
(table 3)
When changing in the range of-50～50Oe by the intensity making external magnetic field and-10～10Oe
In the range of exporting change amount MP2 of the 2nd MR element when changing, the ratio of MP1 represent
Index IL relevant to rectilinearity closer to " 5 ", then mean making external magnetic field-50～
In the range of 50Oe during change, the output of the 2nd MR element more changes linearly.
Result as shown in Table 3 understands, by the shape of the 2nd MR element 41 (from stacking side
Shape when observing upward) for square, rectilinearity improves.Thus can confirm that, by
The shape (shape observed above stacked direction) of two MR elements is square shape, can make
From the 2nd MR element output linearity change.
Can be estimated by the result shown in table 2 and table 3, though a MR element 31 and second
The shape (shape when observing above stacked direction) of MR element 41 is polygon-shaped, also
By making to be required the MR element for detecting absolute magnetic signal jumpy of output
The shape of 31 is than the shape more sub-circular of the 2nd MR element 41 for detecting increment magnetic signal
Shape, makes the output of a MR element 31 drastically change, and makes the 2nd MR element 41
The change of output linearity ground.
That is, the above results can estimate, by by the shape of a MR element 31 (from stacking
Shape when observing above direction) (M is the integer of more than 3, N to be set to M+N limit shape
It is the integer of more than 1), and the shape of the 2nd MR element 41 (is seen above stacked direction
Shape when examining) it is set to M limit shape, can effectively play a MR element 31 and second
The response characteristic that MR element 41 is each required.
Claims (10)
1. a Magnetic Sensor, it is characterised in that
At least possess the first magneto-resistance effect element and the second magnetoresistance that can detect external magnetic field
Element,
Described first magneto-resistance effect element and described second magneto-resistance effect element are to include at least respectively
The duplexer of the multilamellar of the free layer that the direction of magnetization changes according to described external magnetic field,
Observe respectively above stacked direction described first magneto-resistance effect element at least described from
During by the most described free layer of layer and described second magneto-resistance effect element, two free layers have respectively
The shape differed,
Described first magnetic resistance when observing above the stacked direction of described first magneto-resistance effect element
The shape of the most described free layer of response element, is to make the change with described external magnetic field
The shape that the slope of the output of described first magneto-resistance effect element changed increases,
Described second magnetic resistance when observing above the stacked direction of described second magneto-resistance effect element
The shape of the most described free layer of response element, is to make the change with described external magnetic field
First magneto-resistance effect element described in the slope ratio of the output of described second magneto-resistance effect element changed
The little shape of slope of output.
Magnetic Sensor the most according to claim 1, wherein, described first magnetoresistance unit
M+N limit shape, described second magnetoresistance unit it is shaped as described in the most described free layer of part
Being shaped as M limit shape described in the most described free layer of part, wherein, M is the integer of more than 3,
N is the integer of more than 1.
Magnetic Sensor the most according to claim 1 and 2, wherein, described first magnetic resistance effect
Answer and described in the most described free layer of element, be shaped as M+N limit shape, described second magnetic resistance effect
Answer and described in the most described free layer of element, be preferably shaped to M limit shape, wherein, M be 4 with
On even number, N is the integer of more than 1.
Magnetic Sensor the most according to claim 2, wherein, described second magnetoresistance unit
It is shaped as described in the most described free layer of part that at least there is relative two limit being parallel to each other
Shape.
Magnetic Sensor the most according to claim 1, wherein, described first magnetoresistance unit
The most described free layer of part described substantially circular in shape, and described second magnetoresistance unit
It is shaped as general square shape described in the most described free layer of part.
6. according to the Magnetic Sensor according to any one of claim 1,2,4 or 5, wherein,
Described first magneto-resistance effect element and described second magneto-resistance effect element are TMR element and GMR
One in element.
7. according to the Magnetic Sensor according to any one of claim 1,2,4 or 5, wherein,
Described first magneto-resistance effect element and described second magneto-resistance effect element are to stack gradually magnetization to fix
Layer, nonmagnetic intermediate layer and described free layer.
Magnetic Sensor the most according to claim 7, wherein, described nonmagnetic intermediate layer is
MgOx, wherein, X=0.1～0.9.
Magnetic Sensor the most according to claim 7, wherein, described nonmagnetic intermediate layer is
Including at least the first nonmagnetic intermediate layer and the duplexer of the second nonmagnetic intermediate layer.
10. a magnetic encoder, it possesses
According to any one of claim 1,2,4,5,8 or 9 Magnetic Sensor；And
Having record has the absolute signal track of absolute magnetic signal and record to have the increasing of increment magnetic signal
Amount signal track and relative to described Magnetic Sensor can the scale portion of relative movement,
Relative to each other and described with described first magneto-resistance effect element and described absolute signal track
Second magneto-resistance effect element and described increment signal track mode relative to each other are relatively provided with institute
State Magnetic Sensor and described scale portion.
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| JP2015064212A JP6107864B2 (en) | 2015-03-26 | 2015-03-26 | Magnetic sensor and magnetic encoder |
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| US (3) | US10073150B2 (en) |
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| CN110260770A (en) * | 2018-03-12 | 2019-09-20 | Tdk株式会社 | Magnetic Sensor and position detecting device |
| CN111465868A (en) * | 2017-12-21 | 2020-07-28 | 罗伯特·博世有限公司 | Magnetoresistive magnetic field sensor bridge with compensation for cross-axis effects |
| CN111868541A (en) * | 2018-05-18 | 2020-10-30 | 株式会社东海理化电机制作所 | Magnetic sensor device |
| CN114764007A (en) * | 2021-01-11 | 2022-07-19 | 大银微系统股份有限公司 | Position sensing mechanism |
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| Publication number | Publication date |
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| JP6107864B2 (en) | 2017-04-05 |
| CN106019183B (en) | 2019-08-09 |
| JP2016183904A (en) | 2016-10-20 |
| US11340316B2 (en) | 2022-05-24 |
| US20160282146A1 (en) | 2016-09-29 |
| US10739419B2 (en) | 2020-08-11 |
| US20200348373A1 (en) | 2020-11-05 |
| US20180364316A1 (en) | 2018-12-20 |
| DE102016102413A1 (en) | 2016-09-29 |
| US10073150B2 (en) | 2018-09-11 |
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