CN106018527A - GaN biosensor provided with integrated type solid film Pt reference electrode and manufacturing method - Google Patents
GaN biosensor provided with integrated type solid film Pt reference electrode and manufacturing method Download PDFInfo
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- CN106018527A CN106018527A CN201610326546.5A CN201610326546A CN106018527A CN 106018527 A CN106018527 A CN 106018527A CN 201610326546 A CN201610326546 A CN 201610326546A CN 106018527 A CN106018527 A CN 106018527A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
Abstract
The invention discloses a GaN biosensor provided with an integrated type solid film Pt reference electrode and a manufacturing method. Compared with a current external Pt reference electrode of the GaN biosensor, the integrated type solid film Pt reference electrode based on the GaN biosensor has a fixed electrode position, is manufactured with a microelectronic process and has higher degree of precision; besides, the integrated type solid film Pt reference electrode is manufactured with a GaN device simultaneously, so that the manufacturing cost is low, the integration level is high, and a small and portable GaN biosensor is easy to realize.
Description
Technical field
The invention belongs to semiconductor biosensor field, be specifically related to a kind of GaN with integrated form solid film Pt reference electrode
Biosensor and manufacture method.
Background technology
As the third generation semi-conducting material of silicon succedaneum, GaN has chemistry anticorrosive, high temperature high power, high electron mobility etc.
Feature, and high reliability can be very suitable for compatibilities such as GaN base light emitting diode, deep ultraviolet detector, wireless sensing chips
Sensor application.
The conventional structure of GaN HEMT device, on the hetero-junctions being made up of AlGaN/GaN epitaxial material, due to piezoelectric polarization and
Spontaneous polarization effect, can be in barrier layer cushion junction, and the position of closer cushion forms one layer of electronegative Two-dimensional electron
Gas, due to the relation that can carry, two-dimensional electron gas has certain confinement.Therefore, when source-drain electrode exists voltage difference, electronics is just
Can move according to electric potential direction on this two dimensional surface, form electric current.Meanwhile, certain negative voltage is applied by grid, it is possible to exhaust
Electronics, it is thus achieved that the on-off control of device.
The Measurement for Biotechnique using GaN field-effect transistor (HEMT) to be used as sensing unit is increasingly becoming a heat in recent years
Point problem.This technology utilize the naked grid of HEMT device to sense biological substance produce the signal of telecommunication, and then produce source-drain current change
Sense, have the advantages that detection is quick, simple, volume is little portable, with low cost, meet very much biology and medical science is led
The demand that territory is quickly detected.Each research institution in the most international GaN field has all carried out the cooperation of biomedical context of detection and has ground
Study carefully.The bio-sensing research that it is carried out covers many aspects, and including gas detecting, pH value detection, DNA fragmentation detects, passes through
The disease detection that in detection blood, urine, saliva and histiocyte, specific enzyme, protein, antigen etc. are carried out, has very
Wide research field.
In AlGaN/GaN HEMT-structure, the interface of AlGaN/GaN HEMT device can form the surface of two-dimensional electron gas and lead to
Road, the two-dimensional electron gas in potential well is controlled by grid voltage, and the grid of AlGaN/GaN HEMT uses molecule film to replace,
During device work, the object to be measured of introducing occurs specific binding with the target antibody to be measured being fixed on molecule film, draws
Play molecule film surface charge to change, thus cause the change of two-dimensional electron gas in potential well, and two-dimensional electron gas is dense
The change of degree can cause the change of electric current between the source electrode (source) of transistor and drain electrode (drain), therefore can be by electric current
Change detects the concentration change introducing object to be measured.By placing an external reference electricity in device grids buffer
Pole, reference electrode current potential is fixed on the grid subthreshold region of device, carries out potential conduction by conductive buffer simultaneously, make
Gate voltage modulation is in sub-threshold region, so that sensor obtains maximum detection sensitivity.
In preferable current-voltage relation, when gate source voltage is less than or equal to threshold voltage, leakage current is zero.And in experiment
In, work as VGS≤VTTime leakage current be referred to as subthreshold current.As shown in Equation 1, when sub-threshold status, leakage current IdWith grid source
Voltage VGSExponentially relation.And in linear zone, leakage current Id and gate source voltage VGSLinear.Formula 1 and 2 is as follows.
Wherein μ refers to that carrier mobility refers to carrier electric capacity, here CbarrterReferring to quantum capacitance, L and W refers to grid length and grid respectively
Width, kBFor Boltzmann constant, T refers to that absolute temperature, q refer to electric charge.Ideally, grid voltage often changes about 60mV and will draw
Play the change of subthreshold current an order of magnitude.Transducer sensitivity S is defined as
Therefore, for obtaining peak response, device should be made to be operated in sub-threshold status.
2011, Xuejin Wen, et al. reports the external Pt reference electrode of use made AlGaN/GaN HEMT device be operated in
Sub-threshold status is so that the sensitivity measuring Streptavidin is improved.2011, Mastura Shafinaz Zainal
Abidin, et al. reports the chemical sensor measuring pH value by AlGaN/GaN HEMT device, have employed Ag/AgCl external
Reference electrode, for making reference electrode that grid is realized biasing, is fixed on polytetrafluoroethylene beaker by external for Ag/AgCl reference electrode
In, and AlGaN/GaN HEMT device is placed in one.Document uses similar external reference electrode method.
In GaN biochemical sensor is applied, a kind of method making device be operated in sub-threshold status, is in device grids buffer
Place an external reference electrode.The electrode material of the structure of conventional Ag/AgCl external electrode typically uses Ag/AgCl or Pt etc.
Material.Conventional reference electrode exists more difficult fixing, and electrode position instability is easily moved, and is difficult to realize portable and miniaturization biography
Making and the shortcoming of application of sensor.
Summary of the invention
It is an object of the invention to overcome above-mentioned deficiency, it is provided that a kind of GaN biology with integrated form solid film reference electrode passes
Sensor and manufacture method, overcome that GaN biosensor is existing installs and uses complexity with external reference electrode, is difficult to realize portable
Shortcoming with miniaturized application.
In order to achieve the above object, there is the manufacture method of the GaN biosensor of integrated form solid film Pt reference electrode,
Comprise the following steps:
Step one, on the clean substrate containing GaN cushion, AlGaN potential barrier and substrate, photoetching development go out table top every
From region, the method for etching or ion implanting is used to form the isolation of device；
Step 2, goes out ohmic contact regions not doing photoetching development on the region isolated, and uses the method for electron beam evaporation to obtain Europe
Nurse metal level, ohmic metal layer uses Ti/Al/Ni/Au four-layer structure, annealing to form alloy, it is thus achieved that Ohmic contact；
Step 3, on ohmic metal layer and on substrate, photoetching development goes out interconnection area and the reference electrode lead-in wire of device source drain electrode
Region, evaporation Ni/Au interconnects metal, and peels off, it is thus achieved that the interconnection metal of GaN device source-drain electrode and the lead-in wire of reference electrode
Metal；
Step 4, on reference electrode lead-in wire, photoetching development goes out reference electrode induction region, the thick reference of sputtering 300～1000nm
Electrode metal Pt, and peel off, form reference electrode metal；
Step 5, at the Si of AlGaN potential barrier, ohmic metal layer and interconnection metallic surface deposit 60-100nm thickness3N4
As passivation layer；
Step 6, carries out photoetching development over the passivation layer, and etches Si3N4, expose the gate region of GaN device, reference electrode
Induction region, the source-drain electrode lead-out area of device and reference electrode lead-out area；
Step 7, uses PDMS to carry out the encapsulation of device, produces sensor test sample cell, finally give have integrated
The GaN biosensor of formula solid film reference electrode.
In described step one, it is preferred that barrier layer can also use InAlN barrier layer or AlN barrier layer.
In described step 2, form alloy at 830 degree of rapid thermal annealings.
In described step 3, utilize electron beam evaporation technique evaporation Ni/Au to interconnect metal, and peel off by lift-off technique.
In described step 4, during deposition Pt, use sputtering technology.
In described step 5, deposit passivation layer uses PECVD method.
In described step 6, etching uses ICP etching method or RIE etching method or wet etching method.
There is the GaN biosensor of integrated form solid film Pt reference electrode, including having GaN cushion, AlGaN gesture
Barrier layer and the substrate of substrate, AlGaN potential barrier is provided with ohmic metal layer, has interconnection gold on ohmic metal layer and on substrate
Belonging to, on the interconnection metal on substrate, sputtering has reference electrode Pt metal, GaN cushion, AlGaN potential barrier, ohmic metal layer
It is deposited with passivation layer with interconnection metal surface, passivation layer exposes the gate region of GaN device, reference electrode induction region, source and drain
On electrode lead-out area and reference electrode lead-out area, substrate and passivation layer, there is PDMS test sample groove.
Compared with prior art, the present invention propose integrated form solid-state Pt thin film reference electrode based on GaN biosensor with
GaN biosensor is existing to be compared with external Pt reference electrode, and electrode position is fixed, and uses microelectronic technique to make, reference electrode
Precision is higher, and makes with GaN device so that cost of manufacture is low simultaneously, and integrated level is high, it is easy to carry out miniaturization and portable
The realization of GaN biosensor.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of step one of the present invention；
Fig. 2 is the schematic diagram of step 2 of the present invention；
Fig. 3 is the schematic diagram of step 3 of the present invention；
Fig. 4 is the schematic diagram of step 4 of the present invention；
Fig. 5 is the schematic diagram of step 5 of the present invention；
Fig. 6 is the schematic diagram of step 6 of the present invention；
Fig. 7 is the schematic diagram of step 7 of the present invention；
Fig. 8 is the device overall work schematic diagram of the present invention.
Detailed description of the invention
The present invention will be further described with embodiment below in conjunction with the accompanying drawings.
See Fig. 1 to Fig. 8, there is the manufacture method of the GaN biosensor of integrated form solid film Pt reference electrode, including
Following steps:
Step one, on the clean substrate containing GaN cushion, AlGaN potential barrier and substrate, photoetching development go out table top every
From region, the method for etching or ion implanting is used to form the isolation of device；
Step 2, goes out ohmic contact regions not doing photoetching development on the region isolated, and uses the method for electron beam evaporation to obtain Europe
Nurse metal level, ohmic metal layer uses Ti/Al/Ni/Au four-layer structure, forms alloy 830 degree of short annealings, it is thus achieved that ohm connects
Touch；
Step 3, on ohmic metal layer and on substrate, photoetching development goes out the interconnection area of device source drain electrode and drawing of reference electrode
Line region, utilizes electron beam evaporation technique evaporation Ni/Au to interconnect metal, and peels off by lift-off technique, it is thus achieved that GaN device source
The interconnection metal of drain electrode and the lead-in wire metal of reference electrode；
Step 4, on reference electrode lead-in wire, photoetching development goes out reference electrode induction region, sputtering technology deposition 300～1000nm
Thick reference electrode Pt metal, and peel off, form reference electrode metal；
Step 5, uses PECVD method to deposit 60-at AlGaN potential barrier, ohmic metal layer and interconnection metallic surface
The Si of 100nm thickness3N4As passivation layer；
Step 6, carries out photoetching development over the passivation layer, and uses ICP etching method or RIE etching method or wet etching method etching
Si3N4, expose the gate region of GaN device and the source-drain electrode lead-out area of reference electrode induction region and device and reference electricity
Pole lead-out area；
Step 7, uses PDMS to carry out the encapsulation of device, produces sensor test sample cell, finally give have integrated
The GaN biosensor of formula solid film reference electrode.
Preferably, barrier layer can also use InAlN barrier layer or AlN barrier layer.
See Fig. 8, there is the GaN biosensor of integrated form solid film Pt reference electrode, including have GaN cushion,
AlGaN potential barrier and the substrate of substrate, AlGaN potential barrier is provided with ohmic metal layer, has on ohmic metal layer and on substrate
Having interconnection metal, on the interconnection metal on substrate, sputtering has reference electrode Pt metal, GaN cushion, AlGaN potential barrier, Europe
Nurse metal level and interconnection metal surface are deposited with passivation layer, and passivation layer offers the gate region of GaN device, reference electrode sensing
There is on region, source-drain electrode lead-out area and reference electrode lead-out area, substrate and passivation layer PDMS test sample groove.
Embodiment 1:
Step one, on the clean substrate containing GaN cushion, AlGaN potential barrier and substrate, photoetching development go out table top every
From region, the method for etching or ion implanting is used to form the isolation of device；
Step 2, goes out ohmic contact regions not doing photoetching development on the region isolated, and uses the method for electron beam evaporation to obtain Europe
Nurse metal level, ohmic metal layer uses Ti/Al/Ni/Au four-layer structure, forms alloy 830 degree of short annealings, it is thus achieved that ohm connects
Touch；
Step 3, on ohmic metal layer and on substrate, photoetching development goes out the interconnection area of device source drain electrode and drawing of reference electrode
Line region, utilizes electron beam evaporation technique evaporation Ni/Au to interconnect metal, and peels off by lift-off technique, it is thus achieved that GaN device source
The interconnection metal of drain electrode and the lead-in wire metal of reference electrode；
Step 4, on reference electrode lead-in wire, photoetching development goes out reference electrode induction region, the ginseng that sputtering technology deposition 300nm is thick
Ratio electrode metal Pt, and peel off, form reference electrode metal；
Step 5, uses PECVD method to deposit 60-at AlGaN potential barrier, ohmic metal layer and interconnection metallic surface
The Si of 100nm thickness3N4As passivation layer；
Step 6, carries out photoetching development over the passivation layer, and uses ICP etching method or RIE etching method or wet etching method etching
Si3N4, expose the gate region of GaN device and the source-drain electrode lead-out area of reference electrode induction region and device and reference electricity
Pole lead-out area；
Step 7, uses PDMS to carry out the encapsulation of device, produces sensor test sample cell, finally give have integrated
The GaN biosensor of formula solid film reference electrode.
Embodiment 2:
Step one, on the clean substrate containing GaN cushion, InAlN barrier layer and substrate, photoetching development go out table top every
From region, the method for etching or ion implanting is used to form the isolation of device；
Step 2, goes out ohmic contact regions not doing photoetching development on the region isolated, and uses the method for electron beam evaporation to obtain Europe
Nurse metal level, ohmic metal layer uses Ti/Al/Ni/Au four-layer structure, forms alloy 830 degree of short annealings, it is thus achieved that ohm connects
Touch；
Step 3, on ohmic metal layer and on substrate, photoetching development goes out the interconnection area of device source drain electrode and drawing of reference electrode
Line region, utilizes electron beam evaporation technique evaporation Ni/Au to interconnect metal, and peels off by lift-off technique, it is thus achieved that GaN device source
The interconnection metal of drain electrode and the lead-in wire metal of reference electrode；
Step 4, on reference electrode lead-in wire, photoetching development goes out reference electrode induction region, sputtering technology deposition 1000nm thickness
Reference electrode Pt metal, and peel off, form reference electrode metal；
Step 5, uses PECVD method to deposit 60-at AlGaN potential barrier, ohmic metal layer and interconnection metallic surface
The Si of 100nm thickness3N4As passivation layer；
Step 6, carries out photoetching development over the passivation layer, and uses ICP etching method or RIE etching method or wet etching method etching
Si3N4, expose the gate region of GaN device and the source-drain electrode lead-out area of reference electrode induction region and device and reference electricity
Pole lead-out area；
Step 7, uses PDMS to carry out the encapsulation of device, produces sensor test sample cell, finally give have integrated
The GaN biosensor of formula solid film reference electrode.
Embodiment 3:
Step one, on the clean substrate containing GaN cushion, AlN barrier layer and substrate, photoetching development goes out mesa-isolated
Region, uses the method for etching or ion implanting to form the isolation of device；
Step 2, goes out ohmic contact regions not doing photoetching development on the region isolated, and uses the method for electron beam evaporation to obtain Europe
Nurse metal level, ohmic metal layer uses Ti/Al/Ni/Au four-layer structure, forms alloy 830 degree of short annealings, it is thus achieved that ohm connects
Touch；
Step 3, on ohmic metal layer and on substrate, photoetching development goes out the interconnection area of device source drain electrode and drawing of reference electrode
Line region, utilizes electron beam evaporation technique evaporation Ni/Au to interconnect metal, and peels off by lift-off technique, it is thus achieved that GaN device source
The interconnection metal of drain electrode and the lead-in wire metal of reference electrode；
Step 4, on reference electrode lead-in wire, photoetching development goes out reference electrode induction region, the ginseng that sputtering technology deposition 650nm is thick
Ratio electrode metal Pt, and peel off, form reference electrode metal；
Step 5, uses PECVD method to deposit 60-at AlGaN potential barrier, ohmic metal layer and interconnection metallic surface
The Si of 100nm thickness3N4As passivation layer；
Step 6, carries out photoetching development over the passivation layer, and uses ICP etching method or RIE etching method or wet etching method etching
Si3N4, expose the gate region of GaN device and the source-drain electrode lead-out area of reference electrode induction region and device and reference electricity
Pole lead-out area；
Step 7, uses PDMS to carry out the encapsulation of device, produces sensor test sample cell, finally give have integrated
The GaN biosensor of formula solid film reference electrode.
Claims (8)
1. there is the manufacture method of the GaN biosensor of integrated form solid film Pt reference electrode, it is characterised in that include
Following steps:
Step one, on the clean substrate containing GaN cushion, AlGaN potential barrier and substrate, photoetching development go out device every
From region, etching or ion injection method is used to form the isolation of device；
Step 2, goes out ohmic contact regions not doing photoetching development on the region isolated, and uses the method for electron beam evaporation to obtain Europe
Nurse metal level, ohmic metal layer uses Ti/Al/Ni/Au four-layer structure, annealing to form alloy, it is thus achieved that Ohmic contact；
Step 3, on ohmic metal layer and on substrate, photoetching development goes out the interconnection area of device source drain electrode and drawing of reference electrode
Line region, evaporation Ni/Au interconnects metal, and peels off, it is thus achieved that the interconnection metal of GaN device source-drain electrode and drawing of reference electrode
Line metal；
Step 4, on reference electrode lead-in wire, photoetching development goes out reference electrode induction region, the thick reference of sputtering 300～1000nm
Electrode metal Pt, and peel off, form reference electrode metal；
Step 5, at the Si of substrate surface deposit 60-100nm thickness3N4As passivation layer；
Step 6, carries out photoetching development over the passivation layer, and etches Si3N4, expose the gate region of GaN device, reference electrode
Induction region, the interconnection metal lead-out area of device and reference electrode lead-out area；
Step 7, uses PDMS to carry out the encapsulation of device, produces sensor test sample cell, finally give have integrated
The GaN biosensor of formula solid film reference electrode.
The making side of the GaN biosensor with integrated form solid film Pt reference electrode the most according to claim 1
Method, it is characterised in that in described step one, barrier layer uses InAlN barrier layer or AlN barrier layer.
The making side of the GaN biosensor with integrated form solid film Pt reference electrode the most according to claim 1
Method, it is characterised in that in described step 2, forms alloy at 830 degree of rapid thermal annealings.
The making side of the GaN biosensor with integrated form solid film Pt reference electrode the most according to claim 1
Method, it is characterised in that in described step 3, utilizes electron beam evaporation technique evaporation Ni/Au to interconnect metal, and uses lift-off work
Skill is peeled off.
The making side of the GaN biosensor with integrated form solid film Pt reference electrode the most according to claim 1
Method, it is characterised in that in described step 4, uses sputtering technology during deposition Pt.
The making side of the GaN biosensor with integrated form solid film Pt reference electrode the most according to claim 1
Method, it is characterised in that in described step 5, deposit passivation layer uses PECVD method.
The making side of the GaN biosensor with integrated form solid film Pt reference electrode the most according to claim 1
Method, it is characterised in that in described step 6, etching uses ICP etching method or RIE etching method or wet etching method.
8. the GaN biosensor with integrated form solid film Pt reference electrode described in claim 1, its feature exists
In, including having the substrate of GaN cushion, AlGaN potential barrier and substrate, AlGaN potential barrier is provided with ohmic metal
Layer, has interconnection metal on ohmic metal layer and on substrate, on the interconnection metal on substrate, sputtering has reference electrode Pt metal, base
Sheet surface deposition has passivation layer, and passivation layer exposes the gate region of GaN device, reference electrode induction region, source-drain electrode extraction
On region and reference electrode lead-out area, substrate and passivation layer, there is PDMS test sample groove.
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| CN113533481A (en) * | 2021-07-13 | 2021-10-22 | 西湖大学 | Metal oxide interface engineering-based field effect transistor, pH sensor and preparation method thereof |
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