CN106008574B - A kind of multifunction triaryl boron derivatives as organic electro phosphorescent device material of main part and thermic delayed fluorescence material - Google Patents
A kind of multifunction triaryl boron derivatives as organic electro phosphorescent device material of main part and thermic delayed fluorescence material Download PDFInfo
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Abstract
The present invention provides a kind of multifunction triaryl boron derivatives as organic electro phosphorescent device material of main part and thermic delayed fluorescence material, and research is found：o,o’‑BP‑NPh2Transmitted wave length, light can be distributed in blue light region, while Δ EST is smaller, therefore also there is TADF characteristics and high ET.Using this compound triplet it is high the characteristics of, using it as material of main part prepare make blue light and green glow PhOLED, the external quantum efficiency highest of blue light PhOLED devices can be with 15%, and the external quantum efficiency of green glow PhOLED devices reaches as high as 22%；Simultaneously using the TADF characteristics of this compound, blue light TADF OLED are prepared using it as luminescent material, device external quantum efficiency is up to 8%, o, and o ' BP NPh2 are the organic optoelectronic materials of a multifunction.Step is simple and convenient to operate, is practical.
Description
Technical field
The invention belongs to field of organic electroluminescence, more particularly to it is a kind of be used as organic electro phosphorescent device material of main part and
The multifunction triaryl boron derivatives of thermic delayed fluorescence material.
Background technology
Organic electroluminescence device (OLED) due to can actively light, glow color continuously adjustabe, be easily achieved it is big
Screen display, the features such as visual angle is wide, technique is simple, cost is low, have become the focus of current flat panel display, have tempting
Application prospect.In order to realize the commercialization of organic electroluminescence device, except needing satisfaction to realize total colouring, monochrome
Outside the requirements such as purity is high, thermo-chemical stability is good, it is also desirable to which device has high luminous efficiency.According to photochemistry principle, due to by
The limitation of spin statistics, the probability that Carrier recombination forms singlet exciton only has 25%, and the Organic Electricity based on fluorescent material
Electroluminescence device sends fluorescence just with singlet exciton attenuation, and the external quantum efficiency highest of device only has 5%.If
Singlet and the energy of triplet excitons can be fully exploited, it would be possible to the limitation of electroluminescent fluorescent luminous efficiency is broken through, because
How this is the key for improving organic electroluminescence device using the attenuation of triplet excitons.One of them important side
Method is to replace fluorescent material with the phosphor material of precious metals complex, the concentration quenching and triplet state for suppression phosphor material-
Triplet state buries in oblivion (TTA) effect, it usually needs is doped in phosphor material as object in material of main part.As organic electroluminescence phosphorus
The material of main part of optical device (PhOLED), it usually needs there is good carrier transmission performance and higher triplet
(ET) so that energy can effectively be transferred to guest materials.In addition, hot activation delayed fluorescence material (TADF) can also
Singlet-the triplet excitons for being electrically excited lower formation are made full use of, such material typically has small singlet-triplet
(ΔEST), triplet excitons can by it is counter be between pass through and be changed into singlet exciton and light.
Triarylboron due to its unique structure and photoelectric properties be received much concern in recent years it is a kind of organic
Photoelectric functional material, due to the influence of boron atom overhead p tracks, boron substituent can be used as an effective electron acceptor, because
, when electron donor such as amino in system be present, system easily shows molecule charge transfer characteristic (ICT) for this.It is special with ICT
The triarylboron of property has been used successfully as in nonlinear optical material, two-photon absorption and luminescent material, OLED
Electric transmission and luminescent material, but about organic electrophosphorescenpolymer (PhOLED) device main body material and blue TADF luminescent materials
Report is also very limited, and wherein main cause is the energy gap that ICT characteristics would generally reduce system so that launch wavelength is long,
Singlet and triplet are all smaller.
The content of the invention
In order to prepare luminous efficiency height, the organic electro phosphorescent device that brightness is big, stability is good, the present invention provides a kind of use
Make the multifunction triaryl boron derivatives of organic electro phosphorescent device material of main part and thermic delayed fluorescence material.Research hair
It is existing：Using o, o '-BP-NPh2(referring to chemical compounds I described below in the present invention) is as the organic of organic electro phosphorescent device
During luminescent layer material of main part, higher device external quantum efficiency can be obtained.
The present invention selects o, o '-BP-NPh first2With its position isomer, p, p '-BP-NPh2(compound II), which is used as, to be had
The material of main part of machine luminescent layer, to obtain high external quantum efficiency.But test result indicates that：Using p, p '-BP-NPh2As
During material of main part, obtain expected from illumination effect.This is probably because the special steric hindrance of dimesitylboryl and diphenylamino effect
O, o '-BP-NPh should be made2With the molecular structure distorted very much, the dihedral angle between two phenyl ring is up to 88 °, not only limit
Conjugation, and cause highest occupied molecular orbital (HOMO) and the minimum track (LUMO) that do not occupy there is no overlapping, o, o substantially '-BP-
NPh2With less Δ EST, so o, o ' and-BP-NPh2Have blue TADF fluorescent emission properties concurrently and compared with high triplet energy level.
To achieve the above object, the present invention uses following scheme：
Based on o, o '-BP-NPh2Have the blue TADF characteristics of luminescences and the performance characteristics compared with high triplet energy level concurrently, the present invention
Chemical compounds I and its derivative are provided as blue light TADF luminescent materials, organic electro phosphorescent device main body material application, describedization
Compound I and II structural formula are as follows：
Preferably, in the phenylbenzene moiety of the chemical compounds I, the dihedral angle between two phenyl ring is up to more than 88 °.
Preferably, maximum absorption band of the chemical compounds I in hexamethylene is 363nm, maximum emission peak 429nm.
Preferably, the mono-crystalline structures figure of the chemical compounds I is as shown in Figure 1.
Present invention also offers a kind of blue light TADF OLED, the luminescent material of the blue light TADF OLED is chemical compounds I.
Present invention also offers a kind of green glow organic electro phosphorescent device PhOLED, the organic electro phosphorescent device
PhOLED material of main part is chemical compounds I.
Present invention also offers a kind of blue light organic phosphorescent electroluminescent device PhOLED, the organic electro phosphorescent device
PhOLED material of main part is chemical compounds I.
Present invention also offers a kind of blue light organic phosphorescent electroluminescent device, the device include successively transparent substrate, anode layer,
Hole transmission layer, organic luminous layer, electron transfer layer and cathode layer, described organic luminous layer includes material of main part and phosphorescence contaminates
Material；The material of main part is chemical compounds I.
Preferably, the average doping concentration of described phosphorescent coloring is 1~30wt%.
Preferably, the phosphorescent coloring is two [2- (4,6- difluorophenyl) pyridine radicals-N, C2’] picolinic acid iridium (III),
Two (1- phenyl-isoquinolyl) (acetylacetone,2,4-pentanedione) iridium (III), octaethylporphyrin platinum or three (2- phenylpyridines) iridium (III) or two
(2- phenylpyridines) (acetylacetone,2,4-pentanedione) iridium (III).
The action principle and beneficial effect of the present invention：
In the present invention, we by electron acceptor dimesitylboryl and electron donor diphenylamino by being incorporated into biphenyl structural
O, o '-position, obtained having concurrently the blue TADF characteristics of luminescences and compared with high triplet energy level triarylboron (o, o '-BP-
NPh2).In this compound, due to the influence of dimesitylboryl and diphenylamino steric effect, phenylbenzene moiety distorts very much, two
Dihedral angle between phenyl ring is up to 88 °, not only reduces the conjugated degree of system, and cause highest occupied molecular orbital (HOMO) and
The minimum track (LUMO) that do not occupy is substantially no overlapping, therefore the compound transmitted wave length, can distribute light in blue light region, together
When Δ ESTIt is smaller, therefore also there is TADF characteristics and high ET(Fig. 2).Utilize the high spy of this compound triplet
Point, it can be prepared as material of main part and make blue light and green glow PhOLED, the external quantum efficiency highest of blue light PhOLED devices
Can be with 15%, the external quantum efficiency of green glow PhOLED devices reaches as high as 22%；The TADF characteristics of this compound are utilized simultaneously,
Blue light TADF OLED can also be prepared using it as luminescent material, device external quantum efficiency is up to 8%, o, o '-BP-NPh2It is
The organic optoelectronic material of one multifunction.
Brief description of the drawings
Fig. 1：o,o’-BP-NPh2Molecular structure and mono-crystalline structures；
Fig. 2：o,o’-BP-NPh2Absorption (solid line), fluorescence (dotted line) and phosphorescence (imaginary point line) spectrum.Absorption and fluorescence
Spectrum determines in room temperature hexamethylene, and phosphorescence spectrum determines in 2- methyltetrahydrofurans 77K；
Fig. 3：The structure drawing of device of the present invention；
Fig. 4：EL spectrograms after the normalization of embodiment 21；
Fig. 5：The brightness of embodiment 21 and current density with voltage change curve；
Fig. 6：The current efficiency of embodiment 21, power efficiency and EQE with brightness change curve.
Embodiment
Feature of present invention and other correlated characteristics are described in further detail by the following examples, in order to the same industry
The understanding of technical staff：
1. a kind of structure of organic electro phosphorescent device is as shown in figure 3, wherein：
1) it is transparent substrate, can is glass or flexible substrate, flexible substrate is using polyesters, polyimide chemical combination
A kind of material in thing；
2) be anode layer, can use inorganic material or organic conductive polymer, inorganic material be generally ITO, zinc oxide,
The higher metal of the work function such as the metal oxides such as zinc tin oxide or gold, copper, silver, the selection of optimization is ITO, and organic conductive gathers
Compound is preferably PEDOT:A kind of material in PSS, PANI；
3) it is hole transmission layer, using the stronger p-type organic semiconductor material of cavity transmission ability, generally triphen amine
One kind in compound, such as NPB, TPD, MTDATA material, the present invention are preferably NPB；
4) it is organic luminous layer, using o, o '-BP-NPh2As material of main part, the phosphorescence dye being entrained in material of main part
Direction of the doping concentration of material along hole transmission layer to electron transfer layer is gradually increasing with the increase of organic luminous layer thickness
Or be gradually reduced and to form grade doping structure, generally metal organic complex, such as FIrpic (blueness), Ir (piq) 2 (acac)
One kind in the material such as (red), PtOEP (red), Ir (ppy) 3 (green), Ir (ppy) 2 (acac) (green), it is averaged
Doping concentration is 0.05~50wt%, and preferable average doping concentration is 1~30wt%；
5) it is electron transfer layer, generally metal organic complex (such as Alq3, BAlq, Gaq3, Al (Saph-q) or Ga
(Saph-q)), aromatic condensed ring class (such as pentacene), o-phenanthroline class (such as Bphen, BCP) Huo oxadiazoles classes (such as PBD)
A kind of material in compound；
6) be cathode layer (metal level), typically using the relatively low metal of the work functions such as lithium, magnesium, calcium, strontium, aluminium, indium or they
With copper, the alloy of gold, silver, the present invention is preferably Mg successively:Ag alloy-layers, Ag layers or LiF layers, Al layers successively.
Organic electro phosphorescent device proposed by the present invention may also include anode buffer layer (not showing in Fig. 1), anode buffer layer
Between anode layer and hole transmission layer, typically using phthalocyanines, polyacrylate, polyimide, fluoropolymer,
A kind of material in inorganic fluorine salt dissolving, inorganic oxide or diamond, such as CuPc.
Embodiment 1
Preferably a kind of phosphorescent OLED s has following structural formula (1) to said structure：
Glass/ITO/NPB/ organic luminous layers 1/Bphen/Mg:Ag/Ag (1)
2. preparation method is as follows：
1. transparent conduction base sheet ito glass is carried out using the method for ultrasonic detergent and the deionized water ultrasound of heat clear
Wash, place it under infrared lamp and dry after cleaning, then the ito glass of drying is carried out UV ozone cleaning and low energy oxygen from
The pretreatment of beamlet bombardment, anode layer of the ito film as device wherein above conductive substrate, the square resistance of ito film is 5 Ω
~100 Ω, thickness are 80~280nm；
2. above-mentioned cleaning, drying and the ito glass by pretreatment are placed in vacuum chamber, 1 × 10 is evacuated to-5~9 ×
10-3Pa, is then deposited hole transmission layers of the one layer of NPB as device in above-mentioned ito film, and the evaporation rate of NPB films is
0.01~0.5nm/s, thickness are 20~80nm；
3. keeping above-mentioned vacuum cavity pressure constant, continue to steam in a manner of grade doping on above-mentioned NPB hole transmission layers
The organic luminous layer doped with phosphorescent coloring FIrpic is plated, grade doping is carried out using the method for double source evaporation, respectively by main body
Material o, o '-BP-NPh2It is placed in FIrpic in different evaporation sources, in evaporation simultaneously respectively with two film thickness monitoring instrument probes
The evaporation rate of two evaporation sources is monitored, by controlling the evaporation rate of two evaporation sources, makes FIrpic in o, o '-
BP-NPh2In doping concentration be gradually increasing, o, o '-BP-NPh with the increase of organic luminous layer evaporation thickness2、FIrpic
Evaporation rate ratio for 1000: 1~1: 1000, FIrpic in o, o '-BP-NPh2In average doping concentration be 1~30wt%,
It is 0.02~0.6nm/s that total speed, which is deposited, and total film thickness is 20~100nm；
4. keeping above-mentioned vacuum cavity pressure constant, continue that one layer of Bphen conduct is deposited on above-mentioned organic luminous layer
The electron transfer layer of device, the evaporation rate of Bphen films is 0.01~0.5nm/s, and thickness is 20~80nm；
5. keeping above-mentioned vacuum cavity pressure constant, Mg is deposited successively on above-mentioned Bphen electron transfer layers:Ag alloys
Layer, cathode layer of the Ag layers as device, wherein alloy-layer are doped using the method for double source evaporation, and Mg, Ag steam in alloy-layer
It is 10: 1 to plate speed ratio, and it is 0.6~2nm/s that total speed, which is deposited, and evaporation gross thickness is 50~200nm, and the evaporation rate of Ag layers is
0.3~0.8nm/s, thickness are 40~200nm.
Embodiment 2
A kind of phosphorescent OLED s has following structural formula (2)：
Glass/IT0/NPB/ organic luminous layers 1/BAlq/LiF/Al (2)
The material of main part of organic luminous layer 1 is o, o '-BP-NPh in structure above (2)2, with grade doping side in this layer
Formula is doped with phosphorescent coloring FIrpic.
According to structure above (2), it is described below with reference to the preparation process detailed embodiment of device：
1.~3. in same structure above (1) preparation process 1.~3.；
4. keeping above-mentioned vacuum cavity pressure constant, continue to be deposited one layer of BAlq on above-mentioned organic luminous layer as device
The electron transfer layer of part, the evaporation rate of BAlq films is 0.01~0.5nm/s, and thickness is 20~80nm；
5. keeping above-mentioned vacuum cavity pressure constant, LiF layers, Al layers is deposited successively on above-mentioned BAlq electron transfer layers
As the cathode layer of device, the wherein thickness of LiF layers is 0.2~2nm, and evaporation rate is 0.01~0.1nm/s, the thickness of Al layers
For 40~200nm, evaporation rate is 0.01~0.5nm/s.
Embodiment 3
It is proposed by the present invention with transparent substrate, anode, organic luminous layer, electric transmission Rotating fields device be preferably with
Lower structural formula (3)：
Glass/ITO/teflon/ organic luminous layers 1/BAlq/LiF/Al (3)
The material of main part of organic luminous layer 1 is o, o '-BP-NPh in structure above (3)2, with grade doping side in this layer
Formula is doped with phosphorescent coloring FIrpic.
According to structure above (3), it is described below with reference to the preparation process detailed embodiment of device：
1. in same structure above (1) preparation process 1.
2. above-mentioned cleaning, drying and the ito glass by pretreatment are placed in vacuum chamber, 1 × 10 is evacuated to-5~9 ×
10-3Pa, anode modification layers of the one layer of teflon as device, the evaporation speed of teflon films are then deposited in above-mentioned ito film
Rate is 0.001~0.1nm/s, and thickness is 2~20nm；
3.~5. in same structure above (2) preparation process 3.~5.
Embodiment 4
It is proposed by the present invention that to have transparent substrate, anode, organic luminous layer, the device of cathode construction be preferably following structure
Formula (4)：
Glass/ITO/teflon/ organic luminous layers 1/Mg:Ag/Ag (4)
According to structure above (4), it is described below with reference to the preparation process detailed embodiment of device：
1.~2. in same structure above (3) preparation process 1.~2.
3. in same structure above (3) preparation process 3.
4. keeping above-mentioned vacuum cavity pressure constant, Mg is deposited successively on above-mentioned luminescent layer:Ag alloy-layers, Ag layers are made
For the cathode layer of device, wherein alloy-layer is doped using the method for double source evaporation, and Mg, Ag evaporation rate ratio are in alloy-layer
10: 1, it is 0.6~2nm/s that total speed, which is deposited, and evaporation gross thickness is 50~200nm, and the evaporation rate of Ag layers is 0.3~0.8nm/
S, thickness are 40~200nm.
Embodiment 5
It is proposed by the present invention to have transparent substrate, anode, hole transmission layer, organic luminous layer, the device of cathode construction excellent
Elect following structural formula as：
Glass/ITO/NPB/ organic luminous layers 1/Mg:Ag/Ag (5)
According to structure above (5), it is described below with reference to the preparation process detailed embodiment of device：
1.~3. in same structure above (1) preparation process 1.~3.
4. keeping above-mentioned vacuum cavity pressure constant, Mg is deposited successively on above-mentioned luminescent layer:Ag alloy-layers, Ag layers are made
For the cathode layer of device, wherein alloy-layer is doped using the method for double source evaporation, and Mg, Ag evaporation rate ratio are in alloy-layer
10: 1, it is 0.6~2nm/s that total speed, which is deposited, and evaporation gross thickness is 50~200nm, and the evaporation rate of Ag layers is 0.3~0.8nm/
S, thickness are 40~200nm.
Embodiment 6 (device number OLED1)
OLED1 is prepared with device identical method shown in above-mentioned preparation structure formula (1).
Comparative example 1 (device number OLED is to 1)
OLED is prepared to 1 with the same method of embodiment 1, the material of main part of the wherein organic luminous layer 1 of device is o,
o’-BP-NMe2。
Embodiment 7 (device number OLED2)
OLED2, wherein device organic luminous layer are prepared with device identical method shown in above-mentioned preparation structure formula (1)
Material of main part uses o, o '-BP-NPh2, phosphorescent coloring uses Ir (ppy) 3, by controlling the evaporation rate ratio of double source evaporation to make
Ir (ppy) 3 is in o, o '-BP-NPh2In doping concentration be gradually reduced with the increase of organic luminous layer evaporation thickness.
Comparative example 2 (device number OLED is to 2)
OLED is prepared to 2 with the same method of embodiment 2, and the material of main part of the wherein organic luminous layer 1 of device is DCB
(N, the N carbazyl -1,4- dimethylenes of '-two benzene).
Embodiment 8 (device number OLED3)
OLED3, wherein device organic luminous layer are prepared with device identical method shown in above-mentioned preparation structure formula (1)
Material of main part uses o, o '-BP-NPh2, phosphorescent coloring uses Ir (piq) 2 (acac), passes through the evaporation speed for controlling double source to be deposited
Rate ratio makes Ir (piq) 2 (acac) in o, o '-BP-NPh2In doping concentration with the increase of organic luminous layer evaporation thickness and
It is gradually reduced.
Comparative example 3 (device number OLED is to 3)
OLED is prepared to 3 with the same method of embodiment 3, and the material of main part of the wherein organic luminous layer 1 of device is
CPF, i.e.,：9,9- bis- (bis- carbazoles of 4--phenyl) fluorenes.
As a result show：The device OLED of embodiment 6-8 organic luminous layer grade doping phosphorescent coloring brightness and luminous
Efficiency is better than the device OLED (device glow color identical is contrasted) of comparative example 2-3 phosphorescent coloring respectively, to device
Performance be greatly improved；The device OLED of the phosphorescent coloring of comparative example 1 can not effectively be lighted.
Embodiment 9 (device number OLED4)
OLED4, wherein device organic luminous layer are prepared with device identical method shown in above-mentioned preparation structure formula (1)
Material of main part uses o, o '-BP-NPh2, phosphorescent coloring uses FIrpic, by controlling the evaporation rate ratio of double source evaporation to make
FIrpic is in o, o '-BP-NPh2In doping concentration be gradually increasing with the increase of organic luminous layer evaporation thickness.
Embodiment 10 (device number OLED5)
OLED5, wherein device organic luminous layer are prepared with device identical method shown in above-mentioned preparation structure formula (1)
Material of main part uses o, o '-BP-NPh2, phosphorescent coloring uses FIrpic, by controlling the evaporation rate ratio of double source evaporation to make
FIrpic is in o, o '-BP-NPh2In doping concentration be gradually increasing with the increase of organic luminous layer evaporation thickness.
Embodiment 11 (device number OLED6)
OLED6, wherein device organic luminous layer are prepared with device identical method shown in above-mentioned preparation structure formula (2)
Material of main part uses o, o '-BP-NPh2, phosphorescent coloring uses Ir (ppy) 2 (acac), passes through the evaporation speed for controlling double source to be deposited
Rate ratio makes Ir (ppy) 2 (acac) in o, o '-BP-NPh2In doping concentration with the increase of organic luminous layer evaporation thickness and
It is gradually reduced.
Embodiment 12 (device number OLED7)
OLED7, wherein device organic luminous layer are prepared with device identical method shown in above-mentioned preparation structure formula (2)
Material of main part uses o, o '-BP-NPh2, phosphorescent coloring uses PtOEP, by controlling the evaporation rate ratio of double source evaporation to make
PtOEP is in o, o '-BP-NPh2In doping concentration be gradually reduced with the increase of organic luminous layer evaporation thickness.
Embodiment 13 (device number OLED8)
OLED8, wherein device organic luminous layer are prepared with device identical method shown in above-mentioned preparation structure formula (2)
Material of main part uses o, o '-BP-NPh2, phosphorescent coloring uses Ir (piq) 2 (acac), passes through the evaporation speed for controlling double source to be deposited
Rate ratio makes Ir (piq) 2 (acac) in o, o '-BP-NPh2In doping concentration with the increase of organic luminous layer evaporation thickness and
It is gradually reduced.
Embodiment 14 (device number OLED9)
OLED9, wherein device organic luminous layer are prepared with device identical method shown in above-mentioned preparation structure formula (3)
Material of main part uses o, o '-BP-NPh2, phosphorescent coloring uses FIrpic, by controlling the evaporation rate ratio of double source evaporation to make
FIrpic is in o, o '-BP-NPh2In doping concentration be gradually increasing with the increase of organic luminous layer evaporation thickness.
Embodiment 15 (device number OLED10)
OLED10, wherein device organic luminous layer are prepared with device identical method shown in above-mentioned preparation structure formula (4)
Material of main part use o, o '-BP-NPh2, phosphorescent coloring uses FIrpic, by controlling the evaporation rate ratio of double source evaporation to make
FIrpic is in o, o '-BP-NPh2In doping concentration be gradually increasing with the increase of organic luminous layer evaporation thickness.
Embodiment 16 (device number OLED11)
OLED11, wherein device organic luminous layer are prepared with device identical method shown in above-mentioned preparation structure formula (5)
Material of main part use o, o '-BP-NPh2, phosphorescent coloring uses FIrpic, by controlling the evaporation rate ratio of double source evaporation to make
FIrpic is in o, o '-BP-NPh2In doping concentration be gradually increasing with the increase of organic luminous layer evaporation thickness.
Embodiment 17：TADF luminescent devices
[ITO/NPB/mCP/o,o’-BP-NPh2:0.5%DFDB-QA/BCP/BePP2/LiF/Al]
ITO conducting glass substrates thick 15mm × 15mm × 1mm are cleaned by ultrasonic 5 minutes with ITO cleaning fluids, deionized water
It is cleaned by ultrasonic 5 minutes, acetone is cleaned by ultrasonic 20 minutes, and isopropanol is cleaned by ultrasonic 20 minutes.After drying, plasma (plasma)
Processing 5 minutes.In high vacuum 5 × 10-5Hole transmission layer NPB, thickness 35nm are sequentially depositing under Pa；First exciton barrier-layer
MCP, thickness 5nm；The method depositing light emitting layer that double source steams altogether, wherein material of main part are o, o '-BP-NPh2, object doping material
Expect for DFDB-QA, doping concentration is 0.5% (weight percentage), thickness 30nm；Second exciton barrier-layer BCP, thickness are
5nm；Electron transfer layer BePP2, thickness 40nm.Redeposited electron injecting layer LiF, thickness 1nm；Metallic cathode Al, thickness
100nm.The device cut-in voltage is 2.7V, high-high brightness 113100cd/m2, maximum power efficiency 53.4lm/W.
Comparative example 4：Device architecture [ITO/NPB/mCP/4CzIPN:0.5%DFDB-QA/BCP/BePP2/LiF/Al]。
Embodiment 18：TADF luminescent devices
[ITO/NPB/mCP/o,o’-BP-NPh2:0.5%TCF3DB-QA/BCP/BePP2/LiF/Al]
ITO conducting glass substrates thick 15mm × 15mm × 1mm are cleaned by ultrasonic 5 minutes with ITO cleaning fluids, deionized water
It is cleaned by ultrasonic 5 minutes, acetone is cleaned by ultrasonic 20 minutes, and isopropanol is cleaned by ultrasonic 20 minutes.After drying, plasma is handled 5 minutes.
In high vacuum 5 × 10-5Hole transmission layer NPB, thickness 35nm are sequentially depositing under Pa；First exciton barrier-layer mCP, thickness are
5nm；The method depositing light emitting layer that double source steams altogether, wherein material of main part are o, o '-BP-NPh2, object dopant material is TCF3DB-
QA, doping concentration are 0.5% (weight percentage), thickness 30nm；Second exciton barrier-layer BCP, thickness 5nm；Electronics
Transport layer BePP2, thickness 40nm.Redeposited electron injecting layer LiF, thickness are 1nm and metallic cathode Al, thickness 100nm.
Comparative example 5：Device architecture [ITO/NPB/mCP/4CzIPN:0.5%TCF3DB-QA/BCP/BePP2/LiF/Al]。
Embodiment 19：TADF luminescent devices
[ITO/NPB/mCP/4CzIPN:0.5%DCF3DB-QA/BCP/BePP2/LiF/Al]
ITO conducting glass substrates thick 15mm × 15mm × 1mm are cleaned by ultrasonic 5 minutes with ITO cleaning fluids, deionized water
It is cleaned by ultrasonic 5 minutes, acetone is cleaned by ultrasonic 20 minutes, and isopropanol is cleaned by ultrasonic 20 minutes.After drying, plasma is handled 5 minutes.
In high vacuum 5 × 10-5Hole transmission layer NPB, thickness 35nm are sequentially depositing under Pa；First exciton barrier-layer mCP, thickness are
5nm；The method depositing light emitting layer that double source steams altogether, wherein material of main part are o, o '-BP-NPh2, object dopant material is DCF3DB-
QA, doping concentration are 0.5% (weight percentage), thickness 30nm；Second exciton barrier-layer BCP, thickness 5nm；Electronics
Transport layer BePP2, thickness 40nm.Redeposited electron injecting layer LiF, thickness are 1nm and metallic cathode Al, thickness 100nm.
Comparative example 6：Device architecture [ITO/NPB/mCP/4CzIPN:0.5%DCF3DB-QA/BCP/BePP2/LiF/Al]。
Embodiment 20：TADF luminescent devices
[ITO/NPB/mCP/4CzIPN:0.5%TFDB-QA/BCP/BePP2/LiF/Al]
ITO conducting glass substrates thick 15mm × 15mm × 1mm are cleaned by ultrasonic 5 minutes with ITO cleaning fluids, deionized water
It is cleaned by ultrasonic 5 minutes, acetone is cleaned by ultrasonic 20 minutes, and isopropanol is cleaned by ultrasonic 20 minutes.After drying, plasma processing minutes.
In high vacuum 5 × 10-5Hole transmission layer NPB, thickness 35nm are sequentially depositing under Pa；First exciton barrier-layer mCP, thickness are
5nm；The method depositing light emitting layer that double source steams altogether, wherein material of main part are o, o '-BP-NPh2, object dopant material is TFDB-
QA, doping concentration are 0.5% (weight percentage), thickness 30nm；Second exciton barrier-layer BCP, thickness 5nm；Electronics
Transport layer BePP2, thickness 40nm.Redeposited electron injecting layer LiF, thickness are 1nm and metallic cathode Al, thickness 100nm.
Comparative device structure [ITO/NPB/mCP/4CzIPN：0.5%TFDB-QA/BCP/BePP2/ LiF/Al] device
As a result show：Embodiment 17-20 device TADF cut-in voltage, brightness and power efficiency is better than comparative example respectively
4-6 device TADF (device glow color identical is contrasted), is greatly improved to the performance of device.
Embodiment 21：TADF luminescent devices
[TO/α-NPD/mCP/DPEPO：10wt%NPh2/TmPyPB(TPBi)/LiF/Al]
Preparation method is the same as embodiment 17.
| Numbering | α-NPD | mCP | EML | TmPyPB | TPBi | Total |
| 1 | 30 | 10 | 30 | 50 | 120 | |
| 2 | 30 | 10 | 30 | 30 | 100 |
Testing result is as follows：
| Numbering | VT | EQEmax | ηp(lm/W) | ηI(cd/A) | Lmax |
| 1 | 4.25 | 6.90 | 6.73 | 9.10 | 322 |
| 2 | 4 | 5.79 | 7.92 | 10.72 | 335 |
Finally it should be noted that the foregoing is only the preferred embodiments of the present invention, this hair is not limited to
Bright, although the present invention is described in detail with reference to the foregoing embodiments, for those skilled in the art, it is still
Technical scheme described in previous embodiment can be modified, or equivalent substitution is carried out to which part.It is all in this hair
Within bright spirit and principle, any modification, equivalent substitution and improvements made etc., protection scope of the present invention should be included in
Within.Above-mentioned although the embodiment of the present invention is described with reference to accompanying drawing, not to the scope of the present invention
Limitation, one of ordinary skill in the art should be understood that on the basis of technical scheme those skilled in the art are not required to
Various modifications or deformation that creative work can make are paid still within protection scope of the present invention.
Claims (5)
1. a kind of green glow organic electro phosphorescent device PhOLED, it is characterised in that the organic electro phosphorescent device PhOLED's
Material of main part is chemical compounds I,
The structural formula of the chemical compounds I is as follows：
2. a kind of blue light organic phosphorescent electroluminescent device PhOLED, it is characterised in that the organic electro phosphorescent device PhOLED's
Material of main part is chemical compounds I,
The structural formula of the chemical compounds I is as follows：
3. a kind of blue light organic phosphorescent electroluminescent device, it is characterised in that the device includes transparent substrate, anode layer, hole successively
Transport layer, organic luminous layer, electron transfer layer and cathode layer, described organic luminous layer include material of main part and phosphorescent coloring；
The material of main part is chemical compounds I,
The structural formula of the chemical compounds I is as follows：
4. blue light organic phosphorescent electroluminescent device as claimed in claim 3, it is characterised in that being averaged for described phosphorescent coloring is mixed
Miscellaneous concentration is 1~30wt%.
5. blue light organic phosphorescent electroluminescent device as claimed in claim 3, it is characterised in that the phosphorescence fuel be two [2- (4,
6- difluorophenyls) pyridine radicals-N, C2’] picolinic acid iridium (III), two (1- phenyl-isoquinolyl) (acetylacetone,2,4-pentanedione) iridium (III),
Octaethylporphyrin platinum or three (2- phenylpyridines) iridium (III) or two (2- phenylpyridines) (acetylacetone,2,4-pentanedione) iridium (III).
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| CN110818731B (en) * | 2018-08-09 | 2023-04-07 | 上海和辉光电股份有限公司 | Triaryl boron derivative organic luminescent material, preparation method and application thereof |
| CN110305149B (en) * | 2019-06-28 | 2022-03-15 | 武汉天马微电子有限公司 | Thermal activation delayed fluorescent material and application thereof |
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