CN105992439A - Linear light emitting diode driver and control method thereof - Google Patents

Linear light emitting diode driver and control method thereof Download PDF

Info

Publication number
CN105992439A
CN105992439A CN201510087261.6A CN201510087261A CN105992439A CN 105992439 A CN105992439 A CN 105992439A CN 201510087261 A CN201510087261 A CN 201510087261A CN 105992439 A CN105992439 A CN 105992439A
Authority
CN
China
Prior art keywords
transistor
voltage
outfan
limit
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201510087261.6A
Other languages
Chinese (zh)
Other versions
CN105992439B (en
Inventor
潘均宏
饶东铮
李惟
李一惟
陈曜洲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Richtek Technology Corp
Original Assignee
Richtek Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Richtek Technology Corp filed Critical Richtek Technology Corp
Publication of CN105992439A publication Critical patent/CN105992439A/en
Application granted granted Critical
Publication of CN105992439B publication Critical patent/CN105992439B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40Details of LED load circuits
    • H05B45/44Details of LED load circuits with an active control inside an LED matrix
    • H05B45/48Details of LED load circuits with an active control inside an LED matrix having LEDs organised in strings and incorporating parallel shunting devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Landscapes

  • Electronic Switches (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)

Abstract

The invention provides a linear light-emitting diode driver and a control method thereof. The linear light emitting diode driver also comprises a protection circuit which judges whether the transient high voltage change occurs or not according to at least one of the voltage of the control end of the transistor and the voltage of the output end of the transistor and triggers the protection function.

Description

线性发光二极管驱动器及其控制方法Linear light-emitting diode driver and its control method

技术领域technical field

本发明是有关一种线性发光二极管(LED)驱动器,特别是关于一种可防止因瞬间电压变化过大而造成电路异常或不稳定的线性LED驱动器及其控制方法。The invention relates to a linear light-emitting diode (LED) driver, in particular to a linear LED driver and a control method thereof which can prevent circuit abnormality or instability caused by excessive transient voltage changes.

背景技术Background technique

目前的LED驱动器可以分为隔离式(isolated)及非隔离式(non-isolated),其中隔离式LED驱动器需要变压器来分隔一次侧及二次侧,因此成本较为昂贵,而非隔离式LED驱动器由于无需变压器,因此成本较低,但是非隔离式LED驱动器在遇到瞬间高电压变化时,可能会引发电路异常或不稳定的问题。The current LED drivers can be divided into isolated and non-isolated. The isolated LED driver needs a transformer to separate the primary side and the secondary side, so the cost is more expensive, while the non-isolated LED driver is due to There is no need for a transformer, so the cost is low, but non-isolated LED drivers may cause abnormal or unstable circuits when they encounter instantaneous high voltage changes.

图1显示传统的非隔离式的线性LED驱动器10,其包括桥式整流器12用以整流交流电压Vac产生直流电压VIN给LED,以及集成电路14控制所要点亮的LED。在集成电路14中,开关18、20、22及24各自经接脚S1、S2、S3及S4与LED串联,控制器16控制开关18、20、22及24的切换以决定要点亮的LED。导致线性LED驱动器10发生瞬间高电压变化的情况有很多,例如雷击、系统的静电放电、多次快速开关交流电源或三端双向硅控(Triode Alternating Current;TRIAC)调光等。1 shows a conventional non-isolated linear LED driver 10, which includes a bridge rectifier 12 for rectifying an AC voltage Vac to generate a DC voltage VIN for LEDs, and an integrated circuit 14 to control the LEDs to be turned on. In the integrated circuit 14, the switches 18, 20, 22 and 24 are connected in series with the LEDs through the pins S1, S2, S3 and S4 respectively, and the controller 16 controls the switching of the switches 18, 20, 22 and 24 to determine the LEDs to be lit. . There are many situations that lead to instantaneous high voltage changes of the linear LED driver 10 , such as lightning strikes, system electrostatic discharge, multiple rapid switching of AC power or Triode Alternating Current (TRIAC) dimming, etc.

以TRIAC调光为例,图2A显示传统的TRIAC调光器,其包括电阻R1、电阻R2、电容C1、双向触发二极管26以及三端双向硅控开关28,其中电阻R1为可变电阻。三端双向硅控开关28一开始为关闭(off)状态,因此交流电压Vac并未输入负载,电阻R1及R2根据交流电压Vac产生电流对电容C1充电,当电容C1上的电压达到双向触发二极管26的转折电压时,双向触发二极管26导通进而使三端双向硅控开关28导通。当三端双向硅控开关28导通时,交流电压Vac输入负载而且电容C1开始放电,三端双向硅控开关28会维持导通状态直至交流电压为零或通过三端双向硅控开关28的电流I1小于一临界值。简单的说,TRIAC调光器会将交流电压Vac转换为具有一导通角的交流切相电压Vtr。而交流切相电压Vtr再经图1中的桥式整流器12整流后将产生如图2B中波形30所示的直流电压VIN。从图2B的波形30可知,TRIAC调光产生的直流电压VIN会瞬间从0V的电压冲上一高压,造成瞬间高电压变化。Taking TRIAC dimming as an example, FIG. 2A shows a traditional TRIAC dimmer, which includes a resistor R1 , a resistor R2 , a capacitor C1 , a triac 26 and a triac 28 , wherein the resistor R1 is a variable resistor. The triac 28 is initially off (off), so the AC voltage Vac is not input to the load, and the resistors R1 and R2 generate current according to the AC voltage Vac to charge the capacitor C1. When the voltage on the capacitor C1 reaches the bidirectional trigger diode When the breakover voltage is 26, the triac 26 is turned on and the triac 28 is turned on. When the triac 28 is turned on, the AC voltage Vac is input to the load and the capacitor C1 starts to discharge, the triac 28 will maintain the conduction state until the AC voltage is zero or the triac 28 The current I1 is less than a critical value. Simply put, the TRIAC dimmer converts the AC voltage Vac into an AC phase-cut voltage Vtr with a conduction angle. After the AC phase-cut voltage Vtr is rectified by the bridge rectifier 12 in FIG. 1 , a DC voltage VIN as shown by the waveform 30 in FIG. 2B will be generated. From the waveform 30 in FIG. 2B , it can be seen that the DC voltage VIN generated by TRIAC dimming will instantly rise from a voltage of 0V to a high voltage, resulting in an instantaneous high voltage change.

图3是图1中开关18的示意图,由于交流电压Vac是高电压,因此开关18必需是高压元件,一般可以使用金属氧化物半导体场效应晶体管(Metal-Oxide-Semiconductor Field Effect Transistor;MOSFET)或绝缘栅双极晶体管(Insulated Gate Bipolar Transistor;IGBT)。图4是直流电压VIN发生瞬间高电压变化时电压的波形图,其中波形32是接脚S1的电压,波形34是开关18的控制端电压。参照图1、图3及图4,开关18的输入端182连接至接脚S1,开关18的控制端184连接控制器16,开关18的输出端连接至接地端,当输入电压VIN发生瞬间高电压变化时,接脚S1上的电压快速上升,如图4的波形32所示,此时将产生一大电流对开关18的输入端及控制端之间的寄生电容Cdg1充电,进而导致开关18的控制端的电压快速上升,如图4的波形34所示,当开关18的控制端的电压超过一临界值Vth时,可能造成不稳定,甚至造成开关18烧毁。在一些应用中,开关18的输出端上还可能连接一些低压电路,当接脚S1上的电压快速上升时,将产生一大电流通过开关18,造成开关18的输出端上的电压快速上升,导致连接开关18的输出端的低压电路无法承受瞬间高电压变化而损毁。FIG. 3 is a schematic diagram of the switch 18 in FIG. 1. Since the AC voltage Vac is a high voltage, the switch 18 must be a high-voltage element. Generally, a metal-oxide-semiconductor field effect transistor (Metal-Oxide-Semiconductor Field Effect Transistor; MOSFET) or Insulated Gate Bipolar Transistor (IGBT). 4 is a voltage waveform diagram when the DC voltage VIN undergoes an instantaneous high voltage change, wherein the waveform 32 is the voltage of the pin S1 , and the waveform 34 is the voltage of the control terminal of the switch 18 . 1, 3 and 4, the input terminal 182 of the switch 18 is connected to the pin S1, the control terminal 184 of the switch 18 is connected to the controller 16, and the output terminal of the switch 18 is connected to the ground terminal. When the voltage changes, the voltage on the pin S1 rises rapidly, as shown in the waveform 32 of FIG. The voltage at the control terminal rises rapidly, as shown in the waveform 34 of FIG. 4 , when the voltage at the control terminal of the switch 18 exceeds a critical value Vth, it may cause instability and even cause the switch 18 to burn out. In some applications, some low-voltage circuits may also be connected to the output end of the switch 18. When the voltage on the pin S1 rises rapidly, a large current will be generated through the switch 18, causing the voltage on the output end of the switch 18 to rise rapidly. As a result, the low voltage circuit connected to the output end of the switch 18 cannot withstand the instantaneous high voltage change and is damaged.

美国专利公开号US 2010/0253245公开一种解决瞬间高电压变化的方式,其是在LED驱动器及LED之间增加一种类似过电压保护电路的电流限制电路,该电流限制电路是检测LED上的电压来控制与LED串联的开关。然而,该过电流限制电路是使用必须外挂在集成电路外面的大元件,因此具有较大的寄生电容,这导致该电流限制电路的反应较慢。此外,美国专利公开号US 2010/0253245的方式也只能解决电击所造成的瞬间高电压变化,无法解决系统的静电放电、多次快速开关交流电源或三端双向硅控(Triode Alternating Current;TRIAC)调光等造成的瞬间高电压变化。US Patent Publication No. US 2010/0253245 discloses a solution to instantaneous high voltage changes, which is to add a current limiting circuit similar to an overvoltage protection circuit between the LED driver and the LED. The current limiting circuit is used to detect the voltage on the LED. voltage to control a switch in series with the LED. However, the over-current limiting circuit uses a large component that must be hung outside the integrated circuit, so it has a large parasitic capacitance, which causes the response of the current limiting circuit to be slow. In addition, the method of US Patent Publication No. US 2010/0253245 can only solve the instantaneous high voltage change caused by electric shock, and cannot solve the electrostatic discharge of the system, multiple rapid switching of AC power or Triode Alternating Current (TRIAC) ) Instantaneous high voltage changes caused by dimming, etc.

发明内容Contents of the invention

本发明的目的之一,在于提供一种可防止因瞬间电压变化过大而造成电路异常或不稳定的线性LED驱动器及其控制方法。One of the objectives of the present invention is to provide a linear LED driver and its control method which can prevent circuit abnormality or instability caused by excessive transient voltage changes.

本发明的目的之一,在于提供一种能够解决各种情况造成的瞬间高电压变化的线性LED驱动器及其控制方法。One of the objectives of the present invention is to provide a linear LED driver and a control method thereof capable of solving instantaneous high voltage changes caused by various situations.

本发明的目的之一,在于提供一种对瞬间高电压变化快速反应的线性LED驱动器及其控制方法。One of the objectives of the present invention is to provide a linear LED driver and its control method that respond quickly to instantaneous high voltage changes.

根据本发明,一种线性发光二极管驱动器,包括一晶体管、一电流源及一保护电路。该晶体管具有一输入端供连接发光二极管,当该晶体管导通时,该发光二极管被点亮。该电流源连接该晶体管的输出端,用以调节通过该发光二极管的电流。该保护电路连接该晶体管,用以限制该晶体管的控制端的电压及该晶体管的输出端的电压其中至少一个的最大值,以避免该线性发光二极管驱动器因该晶体管的输入端的瞬间电压变化而发生异常或不稳定。其中该保护电路可以与该晶体管整合在同一集成电路中,故该保护电路的寄生电容较小,反应较快。According to the present invention, a linear LED driver includes a transistor, a current source and a protection circuit. The transistor has an input terminal for connecting to a light emitting diode, and when the transistor is turned on, the light emitting diode is turned on. The current source is connected to the output terminal of the transistor and used for regulating the current passing through the LED. The protection circuit is connected to the transistor, and is used to limit the maximum value of at least one of the voltage at the control terminal of the transistor and the voltage at the output terminal of the transistor, so as to prevent abnormal or unstable. Wherein the protection circuit and the transistor can be integrated in the same integrated circuit, so the parasitic capacitance of the protection circuit is small and the response is fast.

根据本发明,一种线性发光二极管驱动器的控制方法,该线性发光二极管驱动器包含一晶体管具有一与发光二极管连接的输入端、一控制端及一输出端,该控制方法包括:导通一晶体管以点亮发光二极管;以及限制该晶体管的控制端的电压及该晶体管的输出端的电压其中至少一个的最大值,以避免该线性发光二极管驱动器因该晶体管的输入端的瞬间电压变化而发生异常或不稳定。According to the present invention, a control method of a linear light emitting diode driver, the linear light emitting diode driver includes a transistor having an input terminal connected to the light emitting diode, a control terminal and an output terminal, the control method includes: turning on a transistor to Lighting the LED; and limiting the maximum value of at least one of the voltage at the control terminal of the transistor and the voltage at the output terminal of the transistor, so as to prevent the linear LED driver from being abnormal or unstable due to instantaneous voltage changes at the input terminal of the transistor.

本发明是通过限制该晶体管的控制端的电压及该晶体管的输出端的电压其中至少一个的最大值来达成瞬间高电压变化的保护,即本案是检测该晶体管的控制端的电压及该晶体管的输出端的电压其中至少一个,因此不论是何种情况引发瞬间高电压变化,本案都能确实检测并达成保护。The present invention achieves the protection of instantaneous high voltage change by limiting the maximum value of at least one of the voltage at the control terminal of the transistor and the voltage at the output terminal of the transistor, that is, this case detects the voltage at the control terminal of the transistor and the voltage at the output terminal of the transistor At least one of them, so no matter what kind of situation causes the instantaneous high voltage change, this case can definitely detect and achieve protection.

附图说明Description of drawings

图1显示传统的非隔离式的线性LED驱动器;Figure 1 shows a traditional non-isolated linear LED driver;

图2A显示传统的TRIAC调光器;Figure 2A shows a conventional TRIAC dimmer;

图2B显示图2A中的交流切相电压Vtr经整流后的直流电压VIN波形;FIG. 2B shows the rectified DC voltage VIN waveform of the AC phase-cutting voltage Vtr in FIG. 2A;

图3是图1中开关的示意图;Fig. 3 is a schematic diagram of the switch in Fig. 1;

图4显示直流电压VIN发生瞬间高电压变化时图3中开关上的电压波形;Figure 4 shows the voltage waveform on the switch in Figure 3 when the DC voltage VIN undergoes an instantaneous high voltage change;

图5显示本发明的第一实施例;Figure 5 shows a first embodiment of the present invention;

图6显示图5中箝制电路的另一实施例;Fig. 6 shows another embodiment of the clamping circuit in Fig. 5;

图7显示本发明的第二实施例;Figure 7 shows a second embodiment of the present invention;

图8显示本发明的第三实施例;Figure 8 shows a third embodiment of the present invention;

图9显示图8中箝制电路的另一实施例;Fig. 9 shows another embodiment of the clamping circuit in Fig. 8;

图10显示本发明的第四实施例;以及Figure 10 shows a fourth embodiment of the present invention; and

图11显示图10的电路发生瞬间高电压变化时的电压波形图。FIG. 11 shows the voltage waveform diagram when the circuit in FIG. 10 undergoes an instantaneous high voltage change.

符号说明:Symbol Description:

10 线性LED驱动器10 Linear LED Drivers

12 桥式整流器12 bridge rectifier

14 集成电路14 integrated circuits

16 控制器16 Controllers

18 开关18 switches

20 开关20 switches

22 开关22 switches

24 开关24 switches

26 双向触发二极管26 bidirectional trigger diode

28 三端双向硅控开关28 Three-terminal bidirectional silicon controlled switch

30 波形30 waveforms

32 波形32 waveforms

34 波形34 waveforms

36 晶体管36 transistors

362 输入端362 input

364 控制端364 console

366 输出端366 output

38 晶体管38 transistors

382 输入端382 input

384 控制端384 console

386 输出端386 output

40 电流源40 current source

42 晶体管42 transistors

44 晶体管44 transistors

46 保护电路46 Protection circuit

48 箝制电路48 clamp circuit

50 运算放大器50 operational amplifier

52 开关52 switches

54 稽纳二极管54 Zener Diodes

56 箝制电路56 clamp circuit

58 开关58 switch

60 开关60 switches

62 运算放大器62 operational amplifiers

64 箝制电路64 clamp circuit

66 箝制电路66 clamp circuit

68 稽纳二极管68 Zener Diodes

70 稽纳二极管70 Zener diode

72 开关72 switch

74 运算放大器74 operational amplifier

76 开关76 switch

78 运算放大器78 Operational Amplifiers

80 接脚S1的电压波形80 Voltage waveform of pin S1

82 波形82 waveforms

84 波形84 waveforms

具体实施方式detailed description

图5显示本发明的第一实施例,在图5中仅揭示线性LED驱动器10中的集成电路14,线性LED驱动器10的其余部分请参照图1。在集成电路14中,晶体管36的输入端362经接脚S1连接LED,当晶体管36导通时,与晶体管36串联的LED将被点亮。晶体管38的输入端382经接脚S2连接LED,当晶体管38导通时,与晶体管38串联的LED将被点亮。晶体管36及38为高压元件,且可以是MOSFET或IGBT。晶体管36及38的输出端366及386连接电流源40,电流源40用以调节通过LED的电流使其等于预设的电流Iref,以控制LED的亮度。当晶体管36及38的输出端的电流Is1及Is2之和小于电流源40的电流Iref时,晶体管36及38的输出端的电压Vs下降,因而使通过晶体管42及44的电流Ib1及Ib2下降,导致晶体管36及38的输出端364及384的电压上升,进而使电流Is1及Is2上升。相反的,当电流Is1及Is2之和大于电流源40的电流Iref时,电压Vs上升使电流Ib1及Ib2上升,导致晶体管36及38的输出端364及384的电压下降,进而使电流Is1及Is2下降。保护电路46连接晶体管36及38以限制晶体管36及38上的电压最大值,以避免该线性LED驱动器10因晶体管36或38的输入端362或382的瞬间电压变化而发生异常或不稳定。保护电路46包括一箝制电路48连接晶体管36及38的输出端366及386,以限制晶体管36及38的输出端366及386的最大电压。在此实施例中,箝制电路48为一主动式电路,其包括一运算放大器50及一开关52,其中开关52连接在该晶体管的输出端及一接地端之间,运算放大器50的正输入端连接晶体管36及38的输出端366及386,运算放大器50的负输入端接收一临界值Vref1,运算放大器50的输出端连接开关52的控制端。当接脚S1或S2上的电压发生瞬间高电压变化时,晶体管36及38的输出端366及386上的电流Is1及Is2上升使晶体管36及38的输出端366及386的电压Vs上升,在电压Vs大于临界值Vref2时,运算放大器50控制开关52导通以形成一放电路径以对电压Vs放电,进而限制晶体管36及38的输出端366及386的最大电压。FIG. 5 shows the first embodiment of the present invention. In FIG. 5 , only the integrated circuit 14 in the linear LED driver 10 is disclosed. Please refer to FIG. 1 for the rest of the linear LED driver 10 . In the integrated circuit 14 , the input terminal 362 of the transistor 36 is connected to the LED through the pin S1 . When the transistor 36 is turned on, the LED connected in series with the transistor 36 will be turned on. The input terminal 382 of the transistor 38 is connected to the LED through the pin S2. When the transistor 38 is turned on, the LED connected in series with the transistor 38 will be turned on. Transistors 36 and 38 are high voltage elements and may be MOSFETs or IGBTs. The output terminals 366 and 386 of the transistors 36 and 38 are connected to the current source 40. The current source 40 is used to adjust the current passing through the LED to be equal to a preset current Iref, so as to control the brightness of the LED. When the sum of the current Is1 and Is2 at the output terminals of the transistors 36 and 38 is less than the current Iref of the current source 40, the voltage Vs at the output terminals of the transistors 36 and 38 drops, so that the currents Ib1 and Ib2 passing through the transistors 42 and 44 drop, causing the transistors to The voltages at the output terminals 364 and 384 of 36 and 38 rise, thereby causing currents Is1 and Is2 to rise. Conversely, when the sum of the currents Is1 and Is2 is greater than the current Iref of the current source 40, the voltage Vs rises and the currents Ib1 and Ib2 rise, causing the voltages of the output terminals 364 and 384 of the transistors 36 and 38 to drop, thereby making the currents Is1 and Is2 decline. The protection circuit 46 is connected to the transistors 36 and 38 to limit the maximum voltage on the transistors 36 and 38 to prevent the linear LED driver 10 from being abnormal or unstable due to instantaneous voltage changes of the input terminals 362 or 382 of the transistors 36 or 38 . The protection circuit 46 includes a clamping circuit 48 connected to the output terminals 366 and 386 of the transistors 36 and 38 to limit the maximum voltage of the output terminals 366 and 386 of the transistors 36 and 38 . In this embodiment, the clamping circuit 48 is an active circuit, which includes an operational amplifier 50 and a switch 52, wherein the switch 52 is connected between the output terminal of the transistor and a ground terminal, and the positive input terminal of the operational amplifier 50 The output terminals 366 and 386 of the transistors 36 and 38 are connected, the negative input terminal of the operational amplifier 50 receives a threshold value Vref1 , and the output terminal of the operational amplifier 50 is connected to the control terminal of the switch 52 . When the voltage on the pin S1 or S2 has a momentary high voltage change, the current Is1 and Is2 on the output terminals 366 and 386 of the transistors 36 and 38 rise, so that the voltage Vs of the output terminals 366 and 386 of the transistors 36 and 38 rises, and in When the voltage Vs is greater than the threshold Vref2 , the operational amplifier 50 controls the switch 52 to turn on to form a discharge path to discharge the voltage Vs, thereby limiting the maximum voltage of the output terminals 366 and 386 of the transistors 36 and 38 .

图6显示图5中箝制电路48的另一实施例,在此实施例中,箝制电路48为一被动式电路,其包括一稽纳二极管(Zener diode)54用以限制晶体管36及38的输出端366及386的最大电压,稽纳二极管54的阳极连接一接地端,而稽纳二极管的阴极连接晶体管36及38的输出端366及386。当接脚S1或S2上的电压发生瞬间高电压变化时,晶体管36及38的输出端366及386的电压Vs上升,在电压Vs大于一临界值(即稽纳二极管54的击穿电压)时,稽纳二极管54导通以形成一放电路径对电压Vs放电,进而限制晶体管36及38的输出端366及386的最大电压。FIG. 6 shows another embodiment of the clamping circuit 48 in FIG. 5. In this embodiment, the clamping circuit 48 is a passive circuit that includes a Zener diode (Zener diode) 54 to limit the output terminals of the transistors 36 and 38. The maximum voltage of 366 and 386 , the anode of Zener diode 54 is connected to a ground terminal, and the cathode of Zener diode is connected to the output terminals 366 and 386 of transistors 36 and 38 . When the voltage on the pin S1 or S2 has an instantaneous high voltage change, the voltage Vs of the output terminals 366 and 386 of the transistors 36 and 38 rises, and when the voltage Vs is greater than a critical value (ie, the breakdown voltage of the Zener diode 54) , the Zener diode 54 is turned on to form a discharge path to discharge the voltage Vs, thereby limiting the maximum voltage of the output terminals 366 and 386 of the transistors 36 and 38 .

在图5及图6的实施例中,晶体管36及38是共用一个电流源40及一个箝制电路48,但在其他实施例中,晶体管36及38也可以各自配置不同的电流源40及箝制电路48。5 and 6, the transistors 36 and 38 share a current source 40 and a clamping circuit 48, but in other embodiments, the transistors 36 and 38 can also be configured with different current sources 40 and clamping circuits. 48.

图7显示本发明的第二实施例,其与图5的电路同样包括晶体管36、38、42及44以及电流源40,但图7的保护电路46包括一箝制电路56连接晶体管36及38的控制端364及384以及晶体管36及38的输出端366及386,箝制电路56检测晶体管36及38的输出端366及386的电压Vs,在电压Vs大于一临界值Vref2时,关闭晶体管36及38以限制晶体管36及38的输出端366及386的最大电压。在图7的实施例中,箝制电路56为一主动式电路,其包括开关58及60以及运算放大器62,其中开关58连接在晶体管36的控制端364及接地端之间,开关60连接在晶体管38的控制端384及接地端之间,运算放大器62的正输入端连接晶体管36及38的输出端366及386,运算放大器62的负输入端接收一临界值Vref2,运算放大器62的输出端连接开关58及60的控制端。当接脚S1或S2上的电压发生瞬间高电压变化时,晶体管36及38的输出端366及386的电压Vs上升,在电压Vs大于临界值Vref2时,运算放大器62导通开关58及60以关闭晶体管36及38,进而限制晶体管36及38的输出端366及386的最大电压。在图7的实施例中,晶体管36及38是共用一个电流源40及一个运算放大器62,但在其他实施例中,晶体管36及38也可以各自配置不同的电流源40及运算放大器62。此外,箝制电路56也可以是由被动元件组成的被动式电路。Fig. 7 shows the second embodiment of the present invention, and it comprises transistors 36, 38, 42 and 44 and current source 40 likewise with the circuit of Fig. 5, but the protection circuit 46 of Fig. The control terminals 364 and 384 and the output terminals 366 and 386 of the transistors 36 and 38, the clamping circuit 56 detects the voltage Vs of the output terminals 366 and 386 of the transistors 36 and 38, and when the voltage Vs is greater than a critical value Vref2, the transistors 36 and 38 are turned off To limit the maximum voltage of the output terminals 366 and 386 of the transistors 36 and 38 . In the embodiment of FIG. 7 , the clamping circuit 56 is an active circuit, which includes switches 58 and 60 and an operational amplifier 62, wherein the switch 58 is connected between the control terminal 364 and the ground terminal of the transistor 36, and the switch 60 is connected between the transistor 36 and the ground terminal. Between the control terminal 384 of 38 and the ground terminal, the positive input terminal of the operational amplifier 62 is connected to the output terminals 366 and 386 of the transistors 36 and 38, the negative input terminal of the operational amplifier 62 receives a critical value Vref2, and the output terminal of the operational amplifier 62 is connected to The control terminals of switches 58 and 60. When the voltage on the pin S1 or S2 has an instantaneous high voltage change, the voltage Vs of the output terminals 366 and 386 of the transistors 36 and 38 rises, and when the voltage Vs is greater than the threshold value Vref2, the operational amplifier 62 turns on the switches 58 and 60. The transistors 36 and 38 are turned off, thereby limiting the maximum voltage at the output terminals 366 and 386 of the transistors 36 and 38 . In the embodiment of FIG. 7 , the transistors 36 and 38 share a current source 40 and an operational amplifier 62 , but in other embodiments, the transistors 36 and 38 can also be configured with different current sources 40 and operational amplifiers 62 . In addition, the clamping circuit 56 may also be a passive circuit composed of passive components.

图8显示本发明的第三实施例,其与图5的电路同样包括晶体管36、38、42及44以及电流源40,但图7的保护电路46包括箝制电路64及66分别连接晶体管36及38的控制端364及384,以限制晶体管36及38的控制端364及384的最大电压。在图8的实施例中,箝制电路64及66皆为被动式电路。箝制电路64包括一稽纳二极管68用以限制晶体管36的控制端364的最大电压,稽纳二极管68的阳极连接接地端,稽纳二极管的阴极连接晶体管36的控制端364。箝制电路66包括一稽纳二极管70用以限制晶体管38的控制端384的最大电压,稽纳二极管70的阳极连接接地端,稽纳二极管的阴极连接晶体管38的控制端384。当接脚S1及S2上的电压发生瞬间高电压变化时,将产生电流Icp1及Icp2分别晶体管36的输入端362及控制端364之间的寄生电容Cdg1以及晶体管38的输入端382及控制端384之间的寄生电容Cdg2充电,进而导致晶体管36及38的控制端364及366的电压Vg1及Vg2快速上升。在电压Vg1大于临界值(即稽纳二极管68的击穿电压)时,稽纳二极管68导通以形成放电路径供放电晶体管36的控制端364的电压Vg1,以限制晶体管36的控制端364的最大电压。同样的,在电压Vg2大于临界值(即稽纳二极管70的击穿电压)时,稽纳二极管70导通以形成放电路径供放电晶体管38的控制端384的电压Vg2,以限制晶体管38的控制端384的最大电压。FIG. 8 shows a third embodiment of the present invention, which includes transistors 36, 38, 42 and 44 and a current source 40 like the circuit in FIG. 5, but the protection circuit 46 in FIG. 38 control terminals 364 and 384 to limit the maximum voltage of the control terminals 364 and 384 of transistors 36 and 38 . In the embodiment of FIG. 8, both the clamping circuits 64 and 66 are passive circuits. The clamping circuit 64 includes a Zener diode 68 for limiting the maximum voltage of the control terminal 364 of the transistor 36 , the anode of the Zener diode 68 is connected to the ground terminal, and the cathode of the Zener diode is connected to the control terminal 364 of the transistor 36 . The clamping circuit 66 includes a Zener diode 70 for limiting the maximum voltage of the control terminal 384 of the transistor 38 , the anode of the Zener diode 70 is connected to the ground terminal, and the cathode of the Zener diode is connected to the control terminal 384 of the transistor 38 . When the voltages on the pins S1 and S2 have instantaneous high voltage changes, currents Icp1 and Icp2 will be generated, respectively, the parasitic capacitance Cdg1 between the input terminal 362 and the control terminal 364 of the transistor 36 and the input terminal 382 and the control terminal 384 of the transistor 38 The parasitic capacitance Cdg2 between them is charged, and the voltages Vg1 and Vg2 of the control terminals 364 and 366 of the transistors 36 and 38 rise rapidly. When the voltage Vg1 is greater than the critical value (i.e. the breakdown voltage of the Zener diode 68), the Zener diode 68 is turned on to form a discharge path for the voltage Vg1 of the control terminal 364 of the discharge transistor 36 to limit the voltage of the control terminal 364 of the transistor 36. maximum voltage. Similarly, when the voltage Vg2 is greater than the critical value (i.e. the breakdown voltage of the Zener diode 70), the Zener diode 70 is turned on to form a discharge path for the voltage Vg2 of the control terminal 384 of the discharge transistor 38 to limit the control of the transistor 38. The maximum voltage at terminal 384.

图9显示图8中箝制电路64及66的另一实施例,在此实施例中,箝制电路64及66为主动式电路。在图9中,箝制电路64包括开关72及运算放大器74,其中开关72连接在晶体管36的控制端364及接地端之间,运算放大器74的正输入端连接晶体管36的控制端364,运算放大器74的负输入端接收临界值Vref3,运算放大器74的输出端连接开关72的控制端。在该晶体管的控制端的电压大于一临界值时,导通该开关以限制该晶体管的控制端的最大电压。箝制电路66包括开关76及运算放大器78,其中开关76连接在晶体管38的控制端384及接地端之间,运算放大器78的正输入端连接晶体管38的控制端384,运算放大器78的负输入端接收临界值Vref3,运算放大器78的输出端连接开关76的控制端。当接脚S1及S2上的电压发生瞬间高电压变化时,将产生电流Icp1及Icp2分别晶体管36的输入端362及控制端364之间的寄生电容Cdg1以及晶体管38的输入端382及控制端384之间的寄生电容Cdg2充电,进而导致晶体管36及38的控制端364及366的电压Vg1及Vg2快速上升,在电压Vg1大于临界值Vref3时,运算放大器74导通开关72以限制晶体管36的控制端364的最大电压。同样的,在电压Vg2大于临界值Vref3时,运算放大器78导通开关76以限制晶体管38的控制端384的最大电压。FIG. 9 shows another embodiment of the clamping circuits 64 and 66 in FIG. 8. In this embodiment, the clamping circuits 64 and 66 are active circuits. In Fig. 9, the clamping circuit 64 includes a switch 72 and an operational amplifier 74, wherein the switch 72 is connected between the control terminal 364 of the transistor 36 and the ground terminal, the positive input terminal of the operational amplifier 74 is connected to the control terminal 364 of the transistor 36, and the operational amplifier The negative input terminal of the operational amplifier 74 receives the threshold value Vref3 , and the output terminal of the operational amplifier 74 is connected to the control terminal of the switch 72 . When the voltage of the control terminal of the transistor is greater than a critical value, the switch is turned on to limit the maximum voltage of the control terminal of the transistor. The clamping circuit 66 includes a switch 76 and an operational amplifier 78, wherein the switch 76 is connected between the control terminal 384 of the transistor 38 and the ground terminal, the positive input terminal of the operational amplifier 78 is connected to the control terminal 384 of the transistor 38, and the negative input terminal of the operational amplifier 78 After receiving the threshold value Vref3 , the output terminal of the operational amplifier 78 is connected to the control terminal of the switch 76 . When the voltages on the pins S1 and S2 have instantaneous high voltage changes, currents Icp1 and Icp2 will be generated, respectively, the parasitic capacitance Cdg1 between the input terminal 362 and the control terminal 364 of the transistor 36 and the input terminal 382 and the control terminal 384 of the transistor 38 The parasitic capacitance Cdg2 between them is charged, thereby causing the voltages Vg1 and Vg2 of the control terminals 364 and 366 of the transistors 36 and 38 to rise rapidly. When the voltage Vg1 is greater than the critical value Vref3, the operational amplifier 74 turns on the switch 72 to limit the control of the transistor 36. The maximum voltage at terminal 364. Similarly, when the voltage Vg2 is greater than the threshold Vref3 , the operational amplifier 78 turns on the switch 76 to limit the maximum voltage of the control terminal 384 of the transistor 38 .

图10显示本发明的第四实施例,其与图5的电路同样包括晶体管36、38、42及44以及电流源40,但图10的保护电路46包括箝制电路48、56、64及66。图10的箝制电路48的架构及操作与图5的箝制电路48相同,图10的箝制电路56的架构及操作与图7的箝制电路56相同,图10的箝制电路64及66的架构及操作与图8的箝制电路64及66相同。在其他实施例中,图10的箝制电路48及56也可以使用被动式电路,图10的箝制电路64及66也可以使用主动式电路。FIG. 10 shows a fourth embodiment of the present invention, which includes transistors 36 , 38 , 42 and 44 and a current source 40 like the circuit in FIG. 5 , but the protection circuit 46 in FIG. 10 includes clamping circuits 48 , 56 , 64 and 66 . The structure and operation of the clamping circuit 48 of FIG. 10 are the same as those of the clamping circuit 48 of FIG. 5 , the structure and operation of the clamping circuit 56 of FIG. 10 are the same as those of the clamping circuit 56 of FIG. It is the same as the clamping circuits 64 and 66 of FIG. 8 . In other embodiments, the clamping circuits 48 and 56 in FIG. 10 can also use passive circuits, and the clamping circuits 64 and 66 in FIG. 10 can also use active circuits.

图11显示图10的电路发生瞬间高电压变化时的电压波形图,其中波形80是接脚S1的电压,波形82是晶体管36的控制端364的电压Vg1,波形84是晶体管36的输出端366的电压Vs。参照图10及图11,当发生瞬间高电压变化使接脚S1的电压快速上升时,如图11的时间t1所示,电压Vg1及Vs都开始上升,在时间t2时,电压Vg1已达到箝制电路64中的稽纳二极管68的击穿电压,故稽纳二极管68导通以限制电压Vg1的最大值,以防止线性LED驱动器出现不稳定或烧毁,此时电压Vs仍持续上升。当电压Vs大于临界值Vref1时,箝制电路48的开关52被导通以对电压Vs放电,但由于接脚S1的电压仍在剧烈变化,因此晶体管36的输出端366仍持续产生大电流Is1,箝制电路48无法完全将电流Is1泄放至接地端,导致电压Vs仍持续上升。在电压Vs达到临界值Vref2时,箝制电路56中的开关58被导通以使晶体管36关闭,所以晶体管36的输出端366不再输出电流Is1,随着箝制电路48持续放电,电压Vs开始下降。当电压Vs低于临界值Vref2时,箝制电路56中的开关58被关闭,故晶体管36的控制端364的电压Vg1开始上升,此时电压Vg1还不足以导通晶体管36,所以电压Vs仍持续下降。当晶体管36再次被导通后,若接脚S1的电压仍在剧烈变化,如时间t4所示,电压Vs将再次上升。之后反复前述操作,直到接脚S1的电压稳定后,电压Vs将稳定在正常操作范围。FIG. 11 shows the voltage waveform diagram when the circuit of FIG. 10 undergoes an instantaneous high voltage change, wherein the waveform 80 is the voltage of the pin S1, the waveform 82 is the voltage Vg1 of the control terminal 364 of the transistor 36, and the waveform 84 is the output terminal 366 of the transistor 36. The voltage Vs. Referring to Figure 10 and Figure 11, when an instantaneous high voltage change causes the voltage of the pin S1 to rise rapidly, as shown at time t1 in Figure 11, the voltages Vg1 and Vs both start to rise, and at time t2, the voltage Vg1 has reached the clamp The breakdown voltage of the Zener diode 68 in the circuit 64, so the Zener diode 68 is turned on to limit the maximum value of the voltage Vg1, so as to prevent the linear LED driver from being unstable or burnt out. At this time, the voltage Vs still continues to rise. When the voltage Vs is greater than the threshold value Vref1, the switch 52 of the clamping circuit 48 is turned on to discharge the voltage Vs, but because the voltage of the pin S1 is still changing sharply, the output terminal 366 of the transistor 36 continues to generate a large current Is1, The clamping circuit 48 cannot completely discharge the current Is1 to the ground terminal, so the voltage Vs still continues to rise. When the voltage Vs reaches the critical value Vref2, the switch 58 in the clamping circuit 56 is turned on so that the transistor 36 is turned off, so the output terminal 366 of the transistor 36 no longer outputs the current Is1, and as the clamping circuit 48 continues to discharge, the voltage Vs begins to drop . When the voltage Vs is lower than the critical value Vref2, the switch 58 in the clamping circuit 56 is closed, so the voltage Vg1 of the control terminal 364 of the transistor 36 starts to rise, and the voltage Vg1 is not enough to turn on the transistor 36 at this time, so the voltage Vs still continues decline. After the transistor 36 is turned on again, if the voltage of the pin S1 is still changing sharply, as shown at time t4, the voltage Vs will rise again. Afterwards, the aforementioned operations are repeated until the voltage of the pin S1 is stabilized, and the voltage Vs will be stabilized within a normal operating range.

Claims (28)

1. a linear LED drive, it is characterised in that including:
One transistor, has an input for connecting luminous diode, wherein when this transistor turns, this luminescence two Pole pipe is lit;
One current source, connects the outfan of this transistor, in order to regulate the electric current by this light emitting diode;And
One protection circuit, connects this transistor, in order to limit the voltage controlling end of this transistor and the defeated of this transistor Go out the maximum of voltage at least one of which of end, to avoid defeated because of this transistor of this linear LED drive Enter the transient voltage change of end and occur abnormal or unstable.
2. linear LED drive as claimed in claim 1, it is characterised in that this protection circuit includes One clamped circuit connects the outfan of this transistor, to limit the maximum voltage of the outfan of this transistor.
3. linear LED drive as claimed in claim 2, it is characterised in that this clamped circuit includes:
One switch, is connected between outfan and an earth terminal of this transistor;And
One operational amplifier, connects outfan and this switch of this transistor, big at the voltage of the outfan of this transistor When a marginal value, turn on this switch to limit the maximum voltage of the outfan of this transistor.
4. linear LED drive as claimed in claim 2, it is characterised in that this clamped circuit includes One zener diode is in order to limit the maximum voltage of the outfan of this transistor, and the anode of this zener diode connects one and connects Ground end, the negative electrode of this zener diode connects the outfan of this transistor.
5. linear LED drive as claimed in claim 1, it is characterised in that this protection circuit includes One clamped circuit connects control end and the outfan of this transistor of this transistor, detects the electricity of the outfan of this transistor Pressure, when the voltage of the outfan of this transistor is more than a marginal value, closes this transistor to limit the defeated of this transistor Go out the maximum voltage of end.
6. linear LED drive as claimed in claim 5, it is characterised in that this clamped circuit includes:
One switch, is connected between control end and an earth terminal of this transistor;And
One operational amplifier, connects outfan and this switch of this transistor, big at the voltage of the outfan of this transistor When this marginal value, turn on this switch to close this transistor.
7. linear LED drive as claimed in claim 1, it is characterised in that this protection circuit includes One clamped circuit connects the control end of this transistor, to limit the maximum voltage controlling end of this transistor.
8. linear LED drive as claimed in claim 7, it is characterised in that this clamped circuit includes One zener diode is in order to limit the maximum voltage controlling end of this transistor, and the anode of this zener diode connects one and connects Ground end, the negative electrode of this zener diode connects the control end of this transistor.
9. linear LED drive as claimed in claim 7, it is characterised in that this clamped circuit includes:
One switch, is connected between control end and an earth terminal of this transistor;And
One operational amplifier, connects control end and this switch of this transistor, big at the voltage controlling end of this transistor When a marginal value, turn on this switch to limit the maximum voltage controlling end of this transistor.
10. linear LED drive as claimed in claim 1, it is characterised in that this protection circuit includes:
One first clamped circuit, connects the outfan of this transistor, to limit the maximum voltage of the outfan of this transistor;
One second clamped circuit, connect this transistor controls end and the outfan of this transistor, detects this transistor The voltage of outfan, when the voltage of the outfan of this transistor is more than a marginal value, closing this transistor should to limit The maximum voltage of the outfan of transistor;And
One the 3rd clamped circuit, connects the control end of this transistor, to limit the maximum voltage controlling end of this transistor.
11. linear LED drive as claimed in claim 10, it is characterised in that this first clamped circuit Including:
One switch, is connected between outfan and an earth terminal of this transistor;And
One operational amplifier, connects outfan and this switch of this transistor, big at the voltage of the outfan of this transistor When second marginal value, turn on this switch to limit the maximum voltage of the outfan of this transistor.
12. linear LED drive as claimed in claim 10, it is characterised in that this first clamped circuit Including a zener diode in order to limit the maximum voltage of the outfan of this transistor, the anode of this zener diode connects One earth terminal, the negative electrode of this zener diode connects the outfan of this transistor.
13. linear LED drive as claimed in claim 10, it is characterised in that this second clamped circuit Including:
One switch, is connected between control end and an earth terminal of this transistor;And
One operational amplifier, connects outfan and this switch of this transistor, big at the voltage of the outfan of this transistor When this marginal value, turn on this switch to close this transistor.
14. linear LED drive as claimed in claim 10, it is characterised in that the 3rd clamped circuit Including a zener diode in order to limit the maximum voltage controlling end of this transistor, the anode of this zener diode connects One earth terminal, the negative electrode of this zener diode connects the control end of this transistor.
15. linear LED drive as claimed in claim 10, it is characterised in that the 3rd clamped circuit Including:
One switch, is connected between control end and an earth terminal of this transistor;And
One operational amplifier, connects control end and this switch of this transistor, big at the voltage controlling end of this transistor When a marginal value, turn on this switch to limit the maximum voltage controlling end of this transistor.
16. linear LED drive as claimed in claim 1, it is characterised in that this transistor is high pressure Element.
17. linear LED drive as claimed in claim 1, it is characterised in that this transistor is metal Oxide semiconductor field effect transistor.
18. linear LED drive as claimed in claim 1, it is characterised in that this transistor is insulation Grid bipolar transistor.
The control method of 19. 1 kinds of linear LED drive, it is characterised in that this linear light emitting diode drives Dynamic device comprises a transistor and has an input being connected with light emitting diode, control end and an outfan, this control Method comprises the following steps:
Turn on this transistor to light this light emitting diode;And
Limit the maximum of the voltage at least one of which of the voltage controlling end of this transistor and the outfan of this transistor Value, to avoid this linear LED drive, because of the change of the transient voltage of the input of this transistor, exception occurs Or it is unstable.
20. control methods as claimed in claim 19, it is characterised in that it is maximum that this limits the voltage on this transistor The step of value includes the maximum voltage limiting the outfan of this transistor.
21. control methods as claimed in claim 20, it is characterised in that this limits the outfan of this transistor When the step of big voltage is included in the voltage of the outfan of this transistor more than a marginal value, form a discharge path for putting The voltage of the outfan of this transistor of electricity, to limit the maximum voltage of the outfan of this transistor.
22. control methods as claimed in claim 20, it is characterised in that this limits the outfan of this transistor When the step of big voltage is included in the voltage of the outfan of this transistor more than a marginal value, close this transistor to limit The maximum voltage of the outfan of this transistor.
23. control methods as claimed in claim 19, it is characterised in that it is maximum that this limits the voltage on this transistor The step of value includes the maximum voltage controlling end limiting this transistor.
24. control methods as claimed in claim 23, it is characterised in that what this limited this transistor controls end When the step of big voltage is included in the voltage controlling end of this transistor more than a marginal value, form a discharge path for putting The voltage controlling end of this transistor of electricity, to limit the maximum voltage controlling end of this transistor.
25. control methods as claimed in claim 19, it is characterised in that it is maximum that this limits the voltage on this transistor The step of value includes:
Limit the maximum voltage of the outfan of this transistor;And
Limit the maximum voltage controlling end of this transistor.
26. control methods as claimed in claim 25, it is characterised in that this limits the outfan of this transistor When the step of big voltage is included in the voltage of the outfan of this transistor more than a marginal value, form a discharge path for putting The voltage of the outfan of this transistor of electricity, to limit the maximum voltage of the outfan of this transistor.
27. control methods as claimed in claim 25, it is characterised in that this limits the outfan of this transistor When the step of big voltage is included in the voltage of the outfan of this transistor more than a marginal value, close this transistor to limit The maximum voltage of the outfan of this transistor.
28. control methods as claimed in claim 25, it is characterised in that what this limited this transistor controls end When the step of big voltage is included in the voltage controlling end of this transistor more than a marginal value, form a discharge path for putting The voltage controlling end of this transistor of electricity, to limit the maximum voltage controlling end of this transistor.
CN201510087261.6A 2015-01-20 2015-02-25 Linear light emitting diode driver and control method thereof Expired - Fee Related CN105992439B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW104101863A TWI645742B (en) 2015-01-20 2015-01-20 Linear light emitting diode driver and control method thereof
TW104101863 2015-01-20

Publications (2)

Publication Number Publication Date
CN105992439A true CN105992439A (en) 2016-10-05
CN105992439B CN105992439B (en) 2019-03-22

Family

ID=56408878

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510087261.6A Expired - Fee Related CN105992439B (en) 2015-01-20 2015-02-25 Linear light emitting diode driver and control method thereof

Country Status (3)

Country Link
US (1) US9655185B2 (en)
CN (1) CN105992439B (en)
TW (1) TWI645742B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114152855A (en) * 2021-11-26 2022-03-08 北京华峰测控技术股份有限公司 Transistor test circuit and control method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130015781A1 (en) * 2011-07-11 2013-01-17 Rohm Co., Ltd. Led driving device, illuminator, and liquid crystal display device
CN203378116U (en) * 2013-07-31 2014-01-01 深圳市晟碟半导体有限公司 Dynamically configured segmentation LED (light emitting diode) driving device and LED lighting device
TW201415745A (en) * 2012-10-04 2014-04-16 安恩國際公司 Light emitting diode luminance system having clamping device
CN104093250A (en) * 2014-07-07 2014-10-08 电子科技大学 An open circuit overvoltage protection device for LED driving circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI397044B (en) * 2008-08-06 2013-05-21 Chunghwa Picture Tubes Ltd Backlight module control system and control method thereof
US20100253245A1 (en) 2009-04-06 2010-10-07 Lightech Electronic Industries Ltd. Method, system and current limiting circuit for preventing excess current surges
TWI425871B (en) * 2010-01-21 2014-02-01 Beyond Innovation Tech Co Ltd Apparatus for driving load
TWI415517B (en) * 2010-04-14 2013-11-11 Ultrachip Inc Light emitted diode driving circuit
TWI445450B (en) * 2011-12-08 2014-07-11 Leadtrend Tech Corp Short circuit detectors and control methods thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130015781A1 (en) * 2011-07-11 2013-01-17 Rohm Co., Ltd. Led driving device, illuminator, and liquid crystal display device
TW201415745A (en) * 2012-10-04 2014-04-16 安恩國際公司 Light emitting diode luminance system having clamping device
CN203378116U (en) * 2013-07-31 2014-01-01 深圳市晟碟半导体有限公司 Dynamically configured segmentation LED (light emitting diode) driving device and LED lighting device
CN104093250A (en) * 2014-07-07 2014-10-08 电子科技大学 An open circuit overvoltage protection device for LED driving circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114152855A (en) * 2021-11-26 2022-03-08 北京华峰测控技术股份有限公司 Transistor test circuit and control method

Also Published As

Publication number Publication date
US20160212821A1 (en) 2016-07-21
TWI645742B (en) 2018-12-21
CN105992439B (en) 2019-03-22
TW201628457A (en) 2016-08-01
US9655185B2 (en) 2017-05-16

Similar Documents

Publication Publication Date Title
US10433384B2 (en) LED driver with silicon controlled dimmer, apparatus and control method thereof
CN108200685B (en) LED lighting system for silicon controlled switch control
US8212494B2 (en) Dimmer triggering circuit, dimmer system and dimmable device
TWI616115B (en) Linear light emitting diode driver and control method thereof
EP2782423A1 (en) Power supply circuit and illumination apparatus
US8729875B2 (en) Current zero crossing detector in a dimmer circuit
US10187049B2 (en) Driving device and inductive load driving device
US20150015159A1 (en) Led driver capable of regulating power dissipation and led lighting apparatus using same
US9974134B2 (en) Light-dimming device
CN104868703A (en) High voltage converter without auxiliary winding
CN103874277B (en) Power circuit and lighting device
US20140285099A1 (en) Power Supply Circuit and Illumination Apparatus
CN108430139B (en) LED driving circuit with silicon controlled rectifier dimmer and control method thereof
US11894764B2 (en) Load control device having a closed-loop gate drive circuit including overcurrent protection
EP2782238A2 (en) Power supply circuit with overcurrent protection for an illuminating device
JP2016539465A (en) Driver with open output protection
US20180184490A1 (en) Lighting device and luminaire
US10264636B2 (en) Light source and light emitting module
KR20210025831A (en) Short protection circuit for power switch
US10708989B2 (en) Protection circuit for dimmer, and dimmer
KR20170082010A (en) LED driver provided with time delay circuit
CN111225478B (en) Switch module protection circuit
CN105992439A (en) Linear light emitting diode driver and control method thereof
KR101659088B1 (en) Power supply apparatus of LED
JP2016126825A (en) Switching power supply circuit

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190322

Termination date: 20210225