CN105990509A - High thermal conductivity luminescence diode - Google Patents
High thermal conductivity luminescence diode Download PDFInfo
- Publication number
- CN105990509A CN105990509A CN201510052453.3A CN201510052453A CN105990509A CN 105990509 A CN105990509 A CN 105990509A CN 201510052453 A CN201510052453 A CN 201510052453A CN 105990509 A CN105990509 A CN 105990509A
- Authority
- CN
- China
- Prior art keywords
- plate body
- emittingdiode
- heat
- luminescence unit
- heat conduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
A high thermal conductivity luminescence diode provided by the invention comprises a thermal conductivity substrate, a luminescence unit arranged on the base of the plate body of the thermal conductivity substrate, and an electrode unit electrically connected with the luminescence unit and configured to provide electric energy to allow the luminescence unit to shine. The thermal conductivity substrate includes a body and a plurality of thermal conductivity fibers dispersed at the plate body. The plate body has a base and a bottom arranged at the reverse direction of the base. At least one part of the thermal conductivity fibers is exposed out of the body. The heat energy generated when the luminescence unit shines is conducted and taken away from the luminescence unit through the thermal conductivity fibers of the thermal conductivity substrate to improve the luminescence efficiency.
Description
Technical field
The present invention relates to a kind of light-emittingdiode, particularly relate to a kind of high heat conduction light-emitting diodes
Body.
Background technology
Refering to Fig. 1, existing light-emittingdiode 1, illustrate as a example by horizontal light-emittingdiode,
Mainly comprise a sapphire substrate 11, and be arranged at the luminescence unit on this sapphire substrate 11
12, and two electrode units 13.
This luminescence unit 12 includes a N-shaped gallium nitride being formed at this sapphire substrate 11 surface
(n-GaN) to be covered on a surface of this N-shaped gallium nitride (n-GaN) layer 121 many for layer 121,
Weight sublayer (MQW) 122, and the p-type nitrogen being covered on this weight sublayer (MQW) 122 surface
Change gallium (p-GaN) layer.This electrode unit 13 includes that one arranges this p-type gallium nitride (p-GaN) layer
Top electrode, an and hearth electrode that this n-type gallium nitride layer is set.When from this electrode unit 13
When being passed through an electric current, drive several electricity holes and this n of this p-type gallium nitride (p-GaN) layer 123
Several electronics of type gallium nitride (n-GaN) layer 121 combine in this weight sublayer (MQW) 122
And it is luminous.But, owing to producing jumbo heat energy, and this indigo plant when this luminescence unit 12 is luminous
The heat of gem substrate 11 passes coefficient (thermal conductivity) low (about 40W/m K),
Cause radiating effect poor, and reduce the luminous efficiency of this light-emittingdiode 1 entirety.
In order to solve the heat dissipation problem of sapphire substrate, as U.S. US8809898B2 checks and approves public affairs
Announcement patent of invention case, discloses the manufacture method of a kind of vertical conduction light-emittingdiode, mainly profit
By the mode of substrate transfer, sapphire substrate is converted into the metal basal board that thermal diffusivity is good, to carry
Rise radiating efficiency.But, the process utilizing substrate to shift makes processing procedure the most complicated, and must make
Remove this sapphire substrate with laser lift-off (laser lift-off), also improve manufacturing cost,
And this metal basal board after displacement also can increase extra weight.
Understand through described above, how to solve the heat dissipation problem of light-emittingdiode to promote luminescence effect
Rate, and to avoid using this metal basal board be this technical field to reduce weight with manufacturing cost simultaneously
A person skilled difficult problem to be broken through.
Summary of the invention
It is an object of the invention to provide a kind of high heat conduction light-emittingdiode.
Height heat conduction light-emittingdiode of the present invention, comprises a heat-conducting substrate, a luminescence unit, and one
Electrode unit.This heat-conducting substrate includes a plate body and several heat conduction fibres being scattered in this plate body
Dimension.This plate body has a basal plane, and a bottom surface being in reverse to this basal plane.Described heat conducting fiber
Can be exposed to this plate at least partially this is the most external.This luminescence unit is arranged at the base of this plate body
On face.This electrode unit electrically connects with this luminescence unit, is used for providing electric energy to make this luminescence unit
Luminous.
It is preferred that aforementioned high heat conduction light-emittingdiode, wherein said heat conducting fiber is with staggered volume
The mode of knitting arranges and has cellular structure.
It is preferred that aforementioned high heat conduction light-emittingdiode, wherein said heat conducting fiber is naked from this basal plane
Dew.
It is preferred that aforementioned high heat conduction light-emittingdiode, wherein said heat conducting fiber is naked from this bottom surface
Reveal and direct and extraneous contact.
It is preferred that aforementioned high heat conduction light-emittingdiode, wherein this plate body also have several each other
A bracer at interval, described heat conducting fiber is distributed between described bracer, and from described bracer
Gap expose.
It is preferred that aforementioned high heat conduction light-emittingdiode, wherein said heat conducting fiber be along one with
The vertical direction arranged distribution of this luminescence unit essence is in this plate body.
It is preferred that aforementioned high heat conduction light-emittingdiode, the heat conductivity of wherein said heat conducting fiber
Between 380 to 2000W/m K.
It is preferred that aforementioned high heat conduction light-emittingdiode, wherein said heat conducting fiber is fine selected from metal
Dimension, highly-conductive hot carbon fiber, or graphitization vapour deposition carbon fiber.
It is preferred that aforementioned high heat conduction light-emittingdiode, wherein this plate body is selected from metal, alloy
Metal, thermosetting polymer or thermal plastic high polymer.
It is preferred that aforementioned high heat conduction light-emittingdiode, wherein the constituent material of this plate body is selected from
Following group one of which: silver, aluminum, copper, stannum, antimony, aluminium oxide alloy, phenolic resin,
Furane resins, polysilicone, epoxy resin.
It is preferred that aforementioned high heat conduction light-emittingdiode, wherein this plate body has several hole,
Described heat conducting fiber is from described hole partial denudation.
It is preferred that aforementioned high heat conduction light-emittingdiode, wherein this luminescence unit includes a setting
The first type semiconductor layer on this heat-conducting substrate, one be formed in this first type semiconductor layer
Active layers, and a lid sets the Second-Type semiconductor layer in this active layers, and this electrode unit has
There is a hearth electrode between this heat-conducting substrate and this luminescence unit, and one is positioned at this luminescence
The top electrode of one end face of unit.
It is preferred that aforementioned high heat conduction light-emittingdiode, wherein this luminescence unit includes a setting
The first type semiconductor layer, a part on this heat-conducting substrate are covered on this first type quasiconductor
Active layers on layer, and a lid sets the Second-Type semiconductor layer in this active layers, this electrode list
Unit has the hearth electrode on a surface being formed at this first type semiconductor layer, and a formation
Top electrode in a surface of this Second-Type semiconductor layer.
The beneficial effects of the present invention is: by the described heat conducting fiber of this heat-conducting substrate by this
Produced this luminescence unit of heat energy diversion during light unit luminescence, with improving luminous efficiency.
Accompanying drawing explanation
Fig. 1 is a schematic diagram, and a kind of existing light-emittingdiode is described；
Fig. 2 is a schematic diagram, and a first embodiment of height heat conduction light-emittingdiode of the present invention is described；
Fig. 3 is a schematic perspective view, illustrates that several heat conducting fiber of this first embodiment are in this plate
Arrangement aspect in body；
Fig. 4 is a schematic perspective view, and described heat conducting fiber another row in this plate body is described
Row aspect；
Fig. 5 is a schematic diagram, and a vertical conducting aspect of this first embodiment is described；
Fig. 6 is a schematic diagram, and another aspect of described heat-conducting substrate is described；And
Fig. 7 is a schematic diagram, and the plate body of this second embodiment is described.
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment the present invention is described in detail.
Refering to Fig. 2 and coordinate Fig. 3 and Fig. 4, the one first of height heat conduction light-emittingdiode of the present invention
Embodiment comprises heat-conducting substrate 2, luminescence unit 3, and an electrode unit 4.
This heat-conducting substrate 2 includes that a plate body 21 and several are scattered in the heat conduction of this plate body 21
Fiber 22.This plate body 21 has a basal plane 211, and the end being in reverse to this basal plane 211
Face 212.The constituent material of this plate body 21 is selected from metal, alloying metal, thermosetting polymer
Or thermal plastic high polymer, such as but not limited to selected from following group one of which: silver, aluminum, copper,
Stannum, antimony, aluminium oxide alloy, phenolic resin, furane resins, polysilicone, epoxy resin.
And being exposed at least partially outside this plate body 21 of described heat conducting fiber 22.
Described heat conducting fiber 22 is to be not less than the fiber of 380W/m K selected from heat conductivity, suitable
For the heat conductivity of heat conducting fiber 22 of this first embodiment between 380～2000W/m K,
Selected from metallic fiber (metal fiber), highly-conductive hot carbon fiber (high thermal
Conductivity carbon fiber), or graphitization vapour deposition carbon fiber
(Graphitized VGCF)。
Specifically, described heat conducting fiber 22 can be real with this luminescence unit 3 along one
The vertical direction arranged distribution of matter is in this plate body 21；Can also be to arrange in weaving mode
And there is cellular structure, such as but not limited to as it is shown on figure 3, divide in the way of weaving
It is distributed in this plate body 21 (in Fig. 3, this plate body 21 is to represent in dash-dot line), or such as Fig. 4
Shown in, extend along vertical direction Z being substantially perpendicular to the first type semiconductor layer 31.Wherein,
When described heat conducting fiber 22 is to stack (such as Fig. 3 along vertical direction Z in the way of staggered being stacked
Shown in) time, described heat conducting fiber 22 can have optimal heat conduction effect in the arrangement of X-Y plane direction
Really；And when described heat conducting fiber 22 is to extend along this vertical direction Z, then this heat-conducting substrate 2
In this vertical direction Z, there is splendid heat conductivity.It is preferred that this heat-conducting substrate 2 is in along described
The heat conductivity of the orientation of heat conducting fiber 22 is not less than 300W/m K.
In particular, described heat conducting fiber 22 can expose this from any place of this plate body 21
Direct and extraneous contact outside plate body 21, to increase the thermal diffusivity of this heat-conducting substrate 2 entirety,
It is preferred that described heat conducting fiber 22 can respectively from the basal plane 211 of this plate body 21, bottom surface 212,
Or it is the most exposed from basal plane 211 and the bottom surface 212 of this plate body 21.When described heat conduction
Fiber 22 is when the basal plane 211 of this plate body 21 is exposed, and this luminescence unit 3 can be led with described
Thermal fiber 22 directly contacts, and accelerates heat energy produced by this luminescence unit 3 is directed at this heat conduction
Substrate 2；When described heat conducting fiber 22 is exposed from the bottom surface 212 of this plate body 21, can carry
Rise heat energy from this luminescence unit 3 of this heat-conducting substrate 2 diversion the efficiency in the loss extremely external world；More
Goodly, described heat conducting fiber 22 also can be simultaneously from basal plane 211 and the bottom surface 212 of this plate body 21
Exposed, then can strengthen heat conduction and radiating effect further.It is with described heat conduction in the present embodiment
Fiber 22 is as it is shown on figure 3, one-tenth multiple superposed arranged distribution is in this plate body 21, and respectively
Explain as a example by this basal plane 211 of this plate body 21 and this bottom surface 212 are exposed.
This luminescence unit 3 is arranged on the basal plane 211 of this plate body 21, and includes a setting
The first type semiconductor layer 31 on this heat-conducting substrate 2, a part are covered on this first type and partly lead
Active layers 32 on body layer 31, and one lid set the Second-Type semiconductor layer in this active layers 32
33.This electrode unit 4 electrically connects with this luminescence unit 3, is used for providing electric energy to make this luminescence single
Unit 3 is luminous, and this electrode unit 4 can be to have one between this heat-conducting substrate 2 and this luminescence
Hearth electrode between unit 3, and the top electrode of an end face being positioned at this luminescence unit 3；
Can also be the hearth electrode 41 with a surface being formed at this first type semiconductor layer 31,
And the top electrode 42 on a surface being formed at this Second-Type semiconductor layer 33.By said structure
Understand this first embodiment and turn on aspect in level as shown in Figure 2.Due to this light-emittingdiode
Structure and being chosen as well known to the art of associated materials, and the non-weight for this technology
Point, therefore no longer add explanation.In this first embodiment, this first type semiconductor layer 31, should
Active layers 32, this Second-Type semiconductor layer 33, and this electrode unit 4 is with N-shaped nitrogen respectively
Change gallium layer, multiple quantum trap layer, p-type gallium nitride layer, and explain as a example by gold.
Refering to Fig. 4,5, when the described heat conducting fiber 22 quantity in this heat-conducting substrate 2 is enough
Time, this heat-conducting substrate 2 can act also as conductive applications, therefore, it is possible to directly will have heat conduction and
This heat-conducting substrate 2 of conduction property is arranged at this luminescence unit 3 times, obtains a perpendicular conducting
The light-emittingdiode of aspect.Although being noted that the content of described heat conducting fiber 22 the more
Electric conductivity can be promoted, but, too much heat conducting fiber 22 but can reduce this plate body 21 to institute
State the covering property of heat conducting fiber 22, and be difficult to shape, it is preferred that described heat conducting fiber 22 in
The volume of this heat-conducting substrate 2 occupies percentage ratio between 10% to 60%.Specifically, if this plate
The material of body 21 is epoxy resin (epoxy), and described heat conducting fiber 22 volume occupies percentage
Ratio between 10% to 60%, it is preferred that described heat conducting fiber 22 volume occupy percentage ratio between
30% to 60%；If the material of this plate body 21 is aluminum, described heat conducting fiber 22 volume occupies
Percentage ratio is between 10% to 35%.More specifically, it is epoxy when the material of this plate body 21
Resin (epoxy), and described heat conducting fiber 22 volume occupies percentage ratio when being 50%, this heat conduction
The resistivity of substrate 2 is i.e. up to 0.0011 Ω cm.
When providing electric energy to make this luminescence unit 3 start from this electrode unit 4, particular for height
Power light-emitting diode, owing to the heat conducting fiber 22 of this heat-conducting substrate 2 directly contacts this luminescence
Unit 3, therefore, the jumbo heat energy that this luminescence unit 3 produces in luminescence process, can pass through
This luminescence unit 3 of heat conducting fiber 22 diversion of this heat-conducting substrate 2；And can further pass through
The heat conducting fiber 22 being exposed to outside this bottom surface 212 is the most extraneous by thermal energy conduction, and has splendid
Radiating effect.It is exposed to this plate body 21 described in it addition, and is not coated with by this plate body 21
Heat conducting fiber 22 between cohere integral each other also by carbon particle, and maintain complete leading
The passage of heat, and avoid existing heat conducting fiber or granule to ask because blending the component contamination caused that drops
Topic.
Additionally, to be remarked additionally, in order to promote the thermal diffusivity of this heat-conducting substrate 2, this plate
Body 21 can also have the structure of other different hollow out further, and makes described heat conduction fine
Dimension 22 can be exposed from other position of this plate body 21, with increase described heat conducting fiber 22 with
The contact area of this plate body 21 or with extraneous contact area, and promote this heat-conducting substrate 2
Overall heat conduction and thermal diffusivity.
Aforementioned heat conducting fiber 22 can be when light-emittingdiode makees crystal grain cutting (dicing), institute
Stating heat conducting fiber 22 just can be outside the side periphery of each crystal grain be exposed to.Or additionally utilize laser
The part-structure of this plate body 21 is removed by mode, outside allowing described heat conducting fiber 22 be exposed to i.e.
Can, there is no particular restriction.Such as, refering to Fig. 5,6, it is possible to use laser mode removes this plate
The part-structure of body 21, makes this plate body 21 be formed and has multiple bracer being spaced
The engraved structure of 214, so, described heat conducting fiber 22 is then distributed across described bracer 214
Between, and the gap between described bracer 214 exposes, and described heat conducting fiber 22 can be increased
With this plate body 21 and extraneous contact area, to promote the thermal diffusivity of this heat-conducting substrate 2；
And by adjusting the contact area of this luminescence unit 3 and described heat conducting fiber 22, moreover it is possible to optimize
From this heat-conducting substrate 2 epitaxy effect putting this luminescence unit 3 of heap of stone.
One second embodiment of height heat conduction light-emittingdiode of the present invention be generally the same as this
One embodiment, is at its difference, coordinating refering to Fig. 7, this plate body 21 has several hole
213, described heat conducting fiber 22 (being shown in Fig. 3) is distributed in plate body 21, and part is from described
Outside hole 213 is revealed in.By described hole 213 can make described heat conducting fiber 22 exposed with
Extraneous contact, and be there is splendid heat conduction and thermal diffusivity, additionally, this plate also can be alleviated originally
The weight of body 21 unit volume.
Specifically, this plate body 21 is to be applicable to foaming selected from thermosetting or thermoplasticity etc.
The macromolecular material of molding, such as epoxy resin, phenolic resin, and furane resins etc., via
After physical blowing or chemical blowing.The relevant system foamed owing to utilizing macromolecular material to carry out
Journey is known in the art to be known, and therefore, no longer adds explanation.In the present embodiment, this plate
Body 21 is to utilize after chemical blowing.To illustrate again, the mesh of described hole 213
Be intended to make described heat conducting fiber 22 can pass through these hole 213 and extraneous contact, and alleviate
The weight of this plate body 21 unit volume, but, although described hole 213 is the more, described
Heat conducting fiber 22 the more can increase the weight of thermal diffusivity and unit volume with the area of extraneous contact
Amount is lighter, but, too much hole 213 also can affect the mechanical strength of this plate body 21,
Therefore, under the considering that heat conductivity, weight and mechanical strength are overall, it is preferred that this plate body
21 density are between 0.4g/cm3To 0.9g/cm3。
In sum, height heat conduction light-emittingdiode of the present invention, by by direct for this luminescence unit 3
It is formed on this heat-conducting substrate 2 with high heat conduction and thermal diffusivity, owing to this heat-conducting substrate 2 has
There is the heat conducting fiber 22 of high-termal conductivity, and described heat conducting fiber 22 can be to exposing outside, therefore,
This luminescence unit 3 when start produced heat energy by the described rapid diversion of heat conducting fiber 22
This luminescence unit 3 also outwardly sheds, and can have splendid thermal diffusivity；Moreover it is possible to enter
One step, by this plate body 21 is formed hollow out or hole 213 structure, not only can promote this and lead
The heat conduction of hot substrate 2 and thermal diffusivity, additionally, also can alleviate this plate body 21 unit volume
Weight.
Claims (13)
1. a high heat conduction light-emittingdiode, comprise a piece of heat-conducting substrate, one be arranged at
Luminescence unit on this heat-conducting substrate, and one electrically connect with this luminescence unit, is used for providing
Electric energy makes the electrode unit that this luminescence unit is luminous；It is characterized in that: this heat-conducting substrate includes
The heat conducting fiber that one plate body is scattered in this plate body with several, this plate body has one
Basal plane, and a bottom surface being in reverse to this basal plane, and described heat conducting fiber is at least some of
This is external to be exposed to this plate, and wherein, this luminescence unit is disposed on the basal plane of this plate body
On.
High heat conduction light-emittingdiode the most according to claim 1, it is characterised in that: institute
Stating heat conducting fiber is to arrange in weaving mode and have cellular structure.
High heat conduction light-emittingdiode the most according to claim 1, it is characterised in that: institute
State heat conducting fiber exposed from this basal plane.
High heat conduction light-emittingdiode the most according to claim 3, it is characterised in that: institute
State that heat conducting fiber is exposed from this bottom surface and direct and extraneous contact.
High heat conduction light-emittingdiode the most according to claim 1, it is characterised in that: should
Plate body also has several bracer being spaced, and described heat conducting fiber is distributed in described
Between bracer, and expose from the gap of described bracer.
High heat conduction light-emittingdiode the most according to claim 1, it is characterised in that: institute
Stating heat conducting fiber is in this plate along a direction arranged distribution vertical with this luminescence unit essence
Body.
High heat conduction light-emittingdiode the most according to claim 1, it is characterised in that: institute
State the heat conductivity of heat conducting fiber between 380 to 2000W/m K.
High heat conduction light-emittingdiode the most according to claim 7, it is characterised in that: institute
State heat conducting fiber and be selected from metallic fiber, highly-conductive hot carbon fiber, or graphitization vapour deposition carbon is fine
Dimension.
High heat conduction light-emittingdiode the most according to claim 1, it is characterised in that: should
Plate body is selected from metal, alloying metal, thermosetting polymer or thermal plastic high polymer.
High heat conduction light-emittingdiode the most according to claim 9, it is characterised in that: should
The constituent material of plate body be selected from following group one of which: silver, aluminum, copper, stannum, antimony,
Aluminium oxide alloy, phenolic resin, furane resins, polysilicone, epoxy resin.
11. high heat conduction light-emittingdiodes according to claim 1, it is characterised in that: should
Plate body has several hole, and described heat conducting fiber is from described hole partial denudation.
12. high heat conduction light-emittingdiodes according to claim 1, it is characterised in that: should
Luminescence unit includes first type semiconductor layer being arranged on this heat-conducting substrate, a shape
Become the active layers in this first type semiconductor layer, and a lid sets second in this active layers
Type semiconductor layer, this electrode unit has one between this heat-conducting substrate and this luminescence unit
Hearth electrode, and the top electrode of an end face being positioned at this luminescence unit.
13. high heat conduction light-emittingdiodes according to claim 1, it is characterised in that: should
Luminescence unit includes first type semiconductor layer being arranged on this heat-conducting substrate, a portion
Divide and be covered on the active layers in this first type semiconductor layer, and a lid sets in this active layers
Second-Type semiconductor layer, this electrode unit has one and is formed at this first type semiconductor layer
The hearth electrode on one surface, and the top electricity on a surface being formed at this Second-Type semiconductor layer
Pole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510052453.3A CN105990509A (en) | 2015-02-02 | 2015-02-02 | High thermal conductivity luminescence diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510052453.3A CN105990509A (en) | 2015-02-02 | 2015-02-02 | High thermal conductivity luminescence diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105990509A true CN105990509A (en) | 2016-10-05 |
Family
ID=57036868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510052453.3A Pending CN105990509A (en) | 2015-02-02 | 2015-02-02 | High thermal conductivity luminescence diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105990509A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265537A (en) * | 2019-05-17 | 2019-09-20 | 电子科技大学中山学院 | Substrate, substrate production method and encapsulating structure |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0732743A2 (en) * | 1995-03-17 | 1996-09-18 | Texas Instruments Incorporated | Heat sinks |
| JPH1149578A (en) * | 1997-07-30 | 1999-02-23 | Furukawa Electric Co Ltd:The | Radiating member for semiconductor device and its production |
| US20020041959A1 (en) * | 2000-06-23 | 2002-04-11 | Chihiro Kawai | High thermal conductivity composite material, and method for producing the same |
| CN201100973Y (en) * | 2007-10-18 | 2008-08-13 | 秦文隆 | Heat radiation module |
| CN101832528A (en) * | 2009-03-09 | 2010-09-15 | 亿光电子工业股份有限公司 | Heat radiating module for light-emitting device and LED device |
| CN103748674A (en) * | 2012-07-07 | 2014-04-23 | 迪睿合电子材料有限公司 | Thermally conductive sheet |
| CN103958578A (en) * | 2011-10-19 | 2014-07-30 | 日东电工株式会社 | Thermal-conductive sheet, led mounting substrate, and led module |
| CN104025290A (en) * | 2011-12-28 | 2014-09-03 | 东洋纺株式会社 | Insulating and thermally conductive sheet |
-
2015
- 2015-02-02 CN CN201510052453.3A patent/CN105990509A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0732743A2 (en) * | 1995-03-17 | 1996-09-18 | Texas Instruments Incorporated | Heat sinks |
| JPH1149578A (en) * | 1997-07-30 | 1999-02-23 | Furukawa Electric Co Ltd:The | Radiating member for semiconductor device and its production |
| US20020041959A1 (en) * | 2000-06-23 | 2002-04-11 | Chihiro Kawai | High thermal conductivity composite material, and method for producing the same |
| CN201100973Y (en) * | 2007-10-18 | 2008-08-13 | 秦文隆 | Heat radiation module |
| CN101832528A (en) * | 2009-03-09 | 2010-09-15 | 亿光电子工业股份有限公司 | Heat radiating module for light-emitting device and LED device |
| CN103958578A (en) * | 2011-10-19 | 2014-07-30 | 日东电工株式会社 | Thermal-conductive sheet, led mounting substrate, and led module |
| CN104025290A (en) * | 2011-12-28 | 2014-09-03 | 东洋纺株式会社 | Insulating and thermally conductive sheet |
| CN103748674A (en) * | 2012-07-07 | 2014-04-23 | 迪睿合电子材料有限公司 | Thermally conductive sheet |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265537A (en) * | 2019-05-17 | 2019-09-20 | 电子科技大学中山学院 | Substrate, substrate production method and encapsulating structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6518598B1 (en) | III-nitride LED having a spiral electrode | |
| CN102959741B (en) | Optoelectronic component and method for producing same | |
| CN101248537B (en) | Led with roughened high refractive index surface layer for high light extraction | |
| US6781160B1 (en) | Semiconductor light emitting device and method for manufacturing the same | |
| CN101467268B (en) | Semiconductor light emitting device including porous layer and its manufacture method | |
| TW200408140A (en) | GaN-based Ⅲ-Ⅴ group compound semiconductor light-emitting diode and the manufacturing method thereof | |
| CN1905224A (en) | Semiconductor chip or device with vertical structure through-hole | |
| US20170317240A1 (en) | Optoelectronic semiconductor chip | |
| CN105633236B (en) | Light emitting diode and preparation method thereof | |
| KR200472973Y1 (en) | Light emitting diode substrate and light emitting diode | |
| TWI501427B (en) | Solid state lighting devices with point contacts and associated methods of manufacturing | |
| CN101461068B (en) | Rod-type semiconductor device | |
| CN100454587C (en) | Light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof and methods of forming the same | |
| CN1674312A (en) | Semiconductor chip or component (including high brightness LED) with vertical structure | |
| CN102544274B (en) | Wafer substrate bonding structure, light emitting device and method for manufacturing the same | |
| US7982238B2 (en) | Light-emitting diode | |
| CN102473804B (en) | P-contact layer for III phosphide semiconductor luminescent device | |
| DE102012105772A1 (en) | Semiconductor light-emitting device package | |
| CN102347345A (en) | Three-dimensional light-emitting device and method for fabricating same | |
| CN105990509A (en) | High thermal conductivity luminescence diode | |
| JP5153571B2 (en) | Solar cell and method for manufacturing solar cell | |
| US20120326187A1 (en) | Solid state lighting devices with improved current spreading and light extraction and associated methods | |
| CN106159054A (en) | Light emitting diode | |
| CN102130248A (en) | Light emitting device and manufacturing method thereof | |
| CN101350384B (en) | LED chip capable of improving light-discharging rate and preparation technique thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161005 |
|
| WD01 | Invention patent application deemed withdrawn after publication |