CN105990311B - Product body induction structure and its manufacturing method - Google Patents
Product body induction structure and its manufacturing method Download PDFInfo
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- CN105990311B CN105990311B CN201510055729.3A CN201510055729A CN105990311B CN 105990311 B CN105990311 B CN 105990311B CN 201510055729 A CN201510055729 A CN 201510055729A CN 105990311 B CN105990311 B CN 105990311B
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Abstract
A kind of long-pending body induction structure, it includes capacitor, protection ring, patterned protective layer and inductance.Protection ring (guard ring) is coupled to capacitor.Patterned protective layer is coupled to protection ring through capacitor, so that patterned protective layer suspension joint.Inductance is configured on protection ring and patterned protective layer.
Description
Technical field
The invention relates to a kind of semiconductor structure and its manufacturing methods, and in particular to a kind of long-pending body inductance knot
Structure and its manufacturing method.
Background technique
With the development of science and technology the processing procedure of product body inductance (integrated inductor) towards 28 nanometers (nm) and
The development of 20 nanometers.Under this miniature sizes, there are many negative effects because caused by miniature sizes, for example, because in product body inductance
Oxidated layer thickness it is relatively thin, and cause capacitance higher, because what is used in product body inductance reconfigures layer (redistribution
Layer, RDL) it is thicker, and higher capacitance ... etc. is generated between RDL layer shape structure, these situations all can be to the quality of inductance
Factor has an impact.
It can be seen that above-mentioned existing mode, it is clear that there are still inconvenient and defects, and have much room for improvement.It is above-mentioned in order to solve
Problem, related fields there's no one who doesn't or isn't painstakingly seeks solution, but does not develop solution appropriate yet for a long time.
Summary of the invention
Summary of the invention be intended to provide this disclosure simplify abstract so that reader have to this disclosure it is basic
Understand.The invention content is not the complete overview of this disclosure, and its be not intended to point out the embodiment of the present invention it is important/
Key element defines the scope of the present invention.
One purpose of the content of present invention is to provide a kind of long-pending body induction structure and its manufacturing method, and using improves previous skill
The problem of art.
In order to achieve the above object, a technology aspect of the content of present invention is this product body inductance about a kind of long-pending body induction structure
Structure includes capacitor, protection ring, patterned protective layer and inductance.Protection ring (guard ring) is coupled to capacitor.It is patterned anti-
Sheath is coupled to protection ring through capacitor, so that patterned protective layer suspension joint.Inductance is configured at protection ring and patterned protective layer
On.
In order to achieve the above object, another technology aspect of the content of present invention is the manufacturer about a kind of long-pending body induction structure
Method, it includes following steps:
Form capacitor；
Protection ring is formed to be coupled to capacitor；
Patterned protective layer is formed to be coupled to protection ring through capacitor, so that patterned protective layer suspension joint；And
Inductance is formed on protection ring and patterned protective layer.
Therefore, technology contents according to the present invention, the embodiment of the present invention is by providing a kind of long-pending body induction structure its manufacture
Method, use improve inductance quality factor decline the problem of.
After refering to following description, persond having ordinary knowledge in the technical field of the present invention, which works as, can will readily appreciate that this
The essence spirit of invention and other goals of the invention and the technology used in the present invention means and state sample implementation.
Detailed description of the invention
For above and other purpose, feature, advantage and embodiment of the invention can be clearer and more comprehensible, institute's accompanying drawings are said
It is bright as follows:
Fig. 1 is the schematic diagram that a kind of long-pending body induction structure is painted according to one embodiment of the invention.
Fig. 2 is the diagrammatic cross-section that a kind of product body induction structure as shown in Figure 1 is painted according to another embodiment of the present invention.
Fig. 3 is the diagrammatic cross-section that a kind of product body induction structure as shown in Figure 1 is painted according to further embodiment of this invention.
Fig. 4 is the diagrammatic cross-section that a kind of product body induction structure as shown in Figure 1 is painted according to another embodiment of the present invention.
Fig. 5 is the diagrammatic cross-section that a kind of product body induction structure as shown in Figure 1 is painted according to yet another embodiment of the invention.
Fig. 6 is the diagrammatic cross-section that a kind of product body induction structure as shown in Figure 1 is painted according to further embodiment of this invention.
Fig. 7 is the experimental data figure that a kind of long-pending body induction structure is painted according to yet another embodiment of the invention.
Fig. 8 is the flow diagram that a kind of manufacturing method of long-pending body induction structure is painted according to one embodiment of the invention.
According to usual operation mode, various features are not drawn to scale with element in figure, drafting mode be in order to
Specific features and element related to the present invention are presented in optimal manner.In addition, between different schemas, with the same or similar
Component symbol censures similar elements/components.
Symbol description
800: method
810~840: step
1000: product body induction structure
1000A~1000D: product body induction structure
1100: protection ring
1110: the first metal portions
1120: the second metal portions
1200: patterned protective layer
1200A~1200D: patterned protective layer
1210A~1210D: the first patterned protection department
1220A~1220D: the second patterned protection department
1300: inductance
1400: capacitor
1400C: capacitor
1400D: capacitor
1410: first kind substrate
1410C: first kind substrate
1410D: first kind substrate
1420: Second Type well
1420C: first kind well
1420D: Second Type well
1430: Second Type doped region
1430C: Second Type doped region
1430D: Second Type doped region
1500: polysilicon resistance
1500C: polysilicon resistance
1500D: the first polysilicon resistance
1600: control line
1700: capacitor
1800: the second polysilicon resistances
1900: substrate
Specific embodiment
In order to keep the narration of this disclosure more detailed with it is complete, below for state sample implementation of the invention and specific
Embodiment proposes illustrative description；But this not implements or uses the unique forms of the specific embodiment of the invention.Embodiment party
The feature of multiple specific embodiments is covered in formula and to construction and the method and step for operating these specific embodiments and its
Sequentially.However, can also reach identical or impartial function and sequence of steps using other specific embodiments.
Unless this specification is defined otherwise, technology belonging to the meaning and the present invention of science and technology vocabulary used herein is led
Tool usually intellectual understands identical as usual meaning in domain.
In addition, about " coupling " used herein, can refer to two or multiple element mutually directly make entity or be electrically connected with
Touching, or mutually put into effect indirectly body or in electrical contact is also referred to as two or multiple element mutual operation or movement.
For the quality factor for improving inductance, the present invention proposes a kind of long-pending its manufacturing method of body induction structure, this product body inductance
The entirety of structure please refers to Fig. 1.As shown in Figure 1, product body induction structure 1000 includes protection ring 1100, patterned protective layer 1200
And inductance 1300, the mode that the present invention improves inductance quality factor are the structure of protection ring 1100 and patterned protective layer 1200
Improvement, will be in being described in detail hereinafter.
Fig. 2 is the diagrammatic cross-section that a kind of product body induction structure as shown in Figure 1 is painted according to another embodiment of the present invention.
As shown, product body induction structure 1000 includes capacitor 1400, protection ring (guard ring) 1100, patterned protective layer 1200
And 1300 (not shown) of inductance.In in structure configuration, protection ring 1100 is coupled to capacitor 1400.Patterned protective layer 1200 is thoroughly
It crosses capacitor 1400 and is coupled to protection ring 1100, so that 1200 suspension joint of patterned protective layer (floating).Inductance 1300 is configured at
On protection ring 1100 and patterned protective layer 1200.
It should be noted that patterned protective layer 1200 can be coupled to ground terminal, and referred to as patterned ground protection layer, make
With explanation as after.It, will be in generating eddy current, above-mentioned eddy current meeting on substrate when the inductance 1300 of product body induction structure 1000 operates
Influence the quality factor of inductance 1300.If configuring the inductance 1300 and base of patterned ground protection layer Yu Jiti induction structure 1000
Between plate, then it can avoid inductance 1300 when operating in generating eddy current on substrate by patterned ground protection layer as shielding
Situation, and then improve inductance quality factor.In one embodiment, the line width size of protection ring 1100 can be 0.05 μm of -10 μ
M, the distance between protection ring 1100 and inductance 1300 can have different scopes of design because of different induction, and possible range is 2 μ
m-25μm。
Furthermore, due to the processing procedure of product body inductance (integrated inductor) towards 28 nanometers (nm) and
The development of 20 nanometers, under this miniature sizes, there are many negative effects because caused by miniature sizes.To improve above-mentioned negative shadow
It rings, the product body induction structure 1000 of the embodiment of the present invention more configures capacitor 1400 in protection ring 1100 and patterned protective layer 1200
Between, so that in other words 1200 suspension joint of patterned protective layer keeps patterned protective layer 1200 not direct and ground terminal.On
Stating structure configuration will make patterned protective layer 1200 form a filter circuit with capacitor 1400, to filter out direct current signal or low frequency
Signal, in this way, above-mentioned direct current signal will can be further avoided or low frequency signal influences the electricity of long-pending body induction structure 1000
Sense 1300 to promote the quality factor of inductance 1300, and then promotes the efficiency of product body induction structure 1000.
In another embodiment, capacitor 1400 includes golden half variodenser of oxygen (MOS varactor), this half variodenser of golden oxygen
Include first kind substrate 1410, Second Type well 1420 and Second Type doped region 1430.In addition, product body induction structure 1000
Further include polysilicon resistance 1500.In in structure configuration, Second Type well 1420 is formed on first kind substrate 1410.Second
Type doped region 1430 is formed in Second Type well 1420, and is coupled to patterned protective layer 1200.1500 shape of polysilicon resistance
At above Second Type well 1420, and it is coupled to protection ring 1100.In one embodiment, protection ring 1100 includes the first metal
Portion 1110 and the second metal portion 1120, the first metal portion 1110 are located at the first metal layer of product body induction structure 1000, and second
Metal portion 1120 is located at the second metal layer of product body induction structure 1000.
By the structure in figure it is found that patterned protective layer 1200 and capacitor 1400 will form previously described filter circuit,
To filter out direct current signal or low frequency signal, avoid influencing inductance 1300, to promote the quality factor of inductance 1300.However, this hair
Bright capacitor 1400 is not limited with half variodenser of gold oxygen shown in above-described embodiment, is familiar with this those skilled in the art when can be according to practical need
Ask and selectively using capacity type appropriate, such as can be used metal-oxide-metal (metal oxide metal,
MOM) capacitor, metal-insulator-metal type (metal insulator metal, MIM) capacitor etc..
In another embodiment, above-mentioned capacitor 1400 can configure its capacitance size according to actual demand, to filter out not
With the signal of frequency range.In another embodiment, above-mentioned first kind substrate 1410 can be p-type substrate, and Second Type well 1420 can
For N-type well, and Second Type doped region 1430 can be N-doped zone, however, the present invention is not limited with above-described embodiment, it is ripe
Practising this those skilled in the art ought can use N-type substrate to make first kind substrate 1410 according to actual demand and selectively, corresponding
Ground, Second Type well 1420 can be p type wells, and Second Type doped region 1430 can be P-doped zone.
Fig. 3 is the diagrammatic cross-section that a kind of product body induction structure as shown in Figure 1 is painted according to further embodiment of this invention.
The difference of the product body induction structure 1000 of long-pending body induction structure 1000A and Fig. 2 shown in Fig. 3 is, the product body induction structure of Fig. 3
The patterned protective layer 1200A of 1000A contains at least two structure, the such as first patterned protection department 1210A and the second pattern
Formula protection department 1220A.In in structure configuration, the first patterned protection department 1210A is coupled to Second Type doped region 1430.Second
Patterned protection department 1220A is coupled to protection ring 1100, and specifically, the second patterned protection department 1220A is coupled to protection ring
1100 the second metal portion 1120.In another embodiment, the first patterned patterned protection department of protection department 1210A and second
1220A is located at the first metal layer and second metal layer of long-pending body induction structure 1000A, and the first patterned protection department
1210A and the second patterned protection department 1220A are overlapped or interlaced, therefore, the first patterned protection department 1210A and
The overall structure of two patterned protection department 1220A will form capacitor, and then promote target signal filter effect.In addition, according to the two
Overlapped or interlaced relationship can further adjust its capacitance size, to filter out the signal of different frequency range.Implement one
In example, the distance between same layer metal may be different because of the capacitance that processing procedure either designs, and possible range is 0.01 μm of -2 μ
m。
Fig. 4 is the diagrammatic cross-section that a kind of product body induction structure as shown in Figure 1 is painted according to another embodiment of the present invention.
The difference of the product body induction structure 1000 of long-pending body induction structure 1000B and Fig. 2 shown in Fig. 4 is, protection ring 1100 and pattern
The configuration mode of formula protective layer 1200 illustrates as after.As shown in figure 4, patterned protective layer 1200B includes the first patterned protection
The patterned protection department 1220B of portion 1210B and second.In in structure configuration, the first patterned protection department 1210B is located at product body inductance
The first metal layer of structure 1000B, and it is coupled to Second Type doped region 1430.Second patterned protection department 1220B is located at product
The second metal layer of body induction structure 1000B, and it is coupled to the first patterned protection department 1210B.In one embodiment, the first figure
Case formula protection department 1210B and the second patterned protection department 1220B are overlapped or interlaced, therefore, are similar to shown in Fig. 3
The overall structure of structure, the first patterned patterned protection department 1220B of protection department 1210B and second in Fig. 4 will form capacitor,
And then promote target signal filter effect.In addition, the overlapped or interlaced relationship according to the two, can further adjust its capacitor
It is worth size, to filter out the signal of different frequency range.
Fig. 5 is the diagrammatic cross-section that a kind of product body induction structure as shown in Figure 1 is painted according to yet another embodiment of the invention.
The difference of the product body induction structure 1000 of long-pending body induction structure 1000C and Fig. 1 shown in fig. 5 is, protection ring 1100, patterned
The configuration mode of protective layer 1200 and capacitor 1400 illustrates as after.As shown in figure 5, capacitor 1400C includes half variodenser of golden oxygen,
Golden half variodenser of oxygen includes first kind substrate 1410C, first kind well 1420C and Second Type doped region 1430C.In addition,
Product body induction structure 1000C further includes polysilicon resistance 1500C.
In in structure configuration, first kind well 1420C is formed on first kind substrate 1410C, and penetrates grounding parts GND
To be coupled to ground terminal.Second Type doped region 1430C is formed in first kind well 1420C, and is coupled to patterned protective layer
1200C.Polysilicon resistance 1500C is formed in above first kind well 1420C, and is coupled to protection ring 1100.In addition, protection ring
1100 are coupled to control line 1600, and the control signal Scon provided by control line 1600 is to be connected first kind well 1420C and
Two type doped region 1430C.
In another embodiment, above-mentioned first kind substrate 1410C can be p-type substrate, and first kind well 1420C can be P
Type well, and Second Type doped region 1430C can be familiar with for N-doped zone however, the present invention is not limited with above-described embodiment
This those skilled in the art works as can be according to actual demand and selectively using material appropriate come implementation.Herein it should be noted that, due to
One type well 1420C and Second Type doped region 1430C using different types of material come implementation, therefore, can be by control line
1600 provide control signal Scon (as provided bias) on and off first kind well 1420C and Second Type doped region
1430C.In this way, which the more permeable above structure configuration of the product body induction structure 1000C of the embodiment of the present invention is further to control
Filter circuit (being formed by capacitor 1400C and patterned protective layer 1200C) processed, so that filter circuit opens or closes, in turn
Promote the flexible operation degree of product body induction structure 1000C, expands the operation strategies of product body induction structure 1000C.
Fig. 6 is the diagrammatic cross-section that a kind of product body induction structure as shown in Figure 1 is painted according to further embodiment of this invention.
The difference of the product body induction structure 1000 of long-pending body induction structure 1000D and Fig. 1 shown in fig. 6 is, patterned protective layer 1200D
And the configuration mode of capacitor 1400D, illustrate as after.As shown in fig. 6, product body induction structure 1000D further includes substrate 1900, first
Polysilicon resistance 1500D and the second polysilicon resistance 1800.In addition, patterned protective layer 1200D includes the first patterned protection
The patterned protection department 1220D of portion 1210D and second.
In in structure configuration, the first polysilicon resistance 1500D is formed in 1900 top of substrate, and is coupled to protection ring
1100.Second polysilicon resistance 1800 is formed in 1900 top of substrate.First patterned protection department 1210D is located at product body inductance knot
The first metal layer of structure 1000D, and it is coupled to the second polysilicon resistance 1800.Second patterned protection department 1220D is located at product body
The second metal layer of induction structure 1000D, and it is coupled to the first patterned protection department 1210D.In another embodiment, the first figure
Case formula protection department 1210D and the second patterned protection department 1220D are overlapped or interlaced.
Fig. 7 is the experimental data figure that a kind of long-pending body induction structure is painted according to yet another embodiment of the invention.This experimental data
Figure indicates that under different frequency, accumulates the corresponding quality factor of the inductance of body induction structure.As shown, curve C1 is that will accumulate
The experimental data that the patterned protective layer of body induction structure is directly grounded.Curve C2 is the pattern of product body induction structure of the invention
The verify data that formula protective layer is not directly grounded.By the experimental data of Fig. 7 it is found that the product body induction structure of the embodiment of the present invention,
Really it can improve the quality factor of the inductance of long-pending body induction structure, and then promote the efficiency of product body induction structure.
Fig. 8 is the flow diagram that a kind of manufacturing method of long-pending body induction structure is painted according to one embodiment of the invention.On
The manufacturing method 800 for stating long-pending body induction structure comprises the steps of:
Step 810: forming capacitor；
Step 820: forming protection ring to be coupled to capacitor；
Step 830: forming patterned protective layer to be coupled to protection ring through capacitor, so that patterned protective layer suspension joint；
And
Step 840: forming inductance on protection ring and patterned protective layer.
To make the manufacturing method 800 of product body induction structure of the invention it can be readily appreciated that also referring to Fig. 1, Fig. 2 and Fig. 8.
In step 810, capacitor 1400 is formed, secondly, forming protection ring 1100 in step 820 to be coupled to capacitor 1400, connecing
, in step 830, patterned protective layer 1200 is formed to be coupled to protection ring 1100 through capacitor 1400, so that patterned
1200 suspension joint of protective layer, then, in step 840, formed inductance 1300 in protection ring 1100 and patterned protective layer 1200 it
On.The product body induction structure 1000 as made by above-mentioned manufacturing method 800, the quality factor for the inductance that is improved mutually is spoken on somebody's behalf
It is bright, it discloses in the description of Yu Shangkai Fig. 2, to make interest of clarity of the present invention, is not repeated in this.
In another embodiment, referring to Figure 2 together with Fig. 8, formed capacitor the step of include: formed first kind substrate
1410；Second Type well 1420 is formed on first kind substrate 1410；Second Type doped region 1430 is formed in Second Type
Well 1420 is simultaneously coupled to patterned protective layer 1200；And formed polysilicon resistance 1500 in Second Type well 1420 above simultaneously coupling
It is connected to protection ring 1100.
In another embodiment, also referring to Fig. 3 and Fig. 8, patterned protective layer is formed to be coupled to guarantor through capacitor
The step of retaining ring, includes: forming the first patterned protection department 1210A and is coupled to Second Type doped region 1430；And form the
Two patterned protection department 1220A are simultaneously coupled to protection ring 1100.Above-mentioned first patterned protection department 1210A and second is patterned anti-
Shield portion 1220A is respectively formed in the first metal layer and second metal layer of long-pending body induction structure 1000A, and the first patterned protection
Portion 1210A and the second patterned protection department 1220A are overlapped or interlaced.The product as made by above-mentioned manufacturing method 800
Body induction structure 1000A, the related description of the quality factor for the inductance that is improved disclose in the description of Yu Shangkai Fig. 3, are
Make interest of clarity of the present invention, is not repeated in this.
In another embodiment, referring to Figure 4 together with Fig. 8, patterned protective layer is formed to be coupled to guarantor through capacitor
The step of retaining ring, includes: forming the first metal layer of the first patterned protection department 1210B Yu Jiti induction structure 1000B, and coupling
It is connected to Second Type doped region 1430；And form the second of the second patterned protection department 1220B Yu Jiti induction structure 1000B
Metal layer, and it is coupled to the first patterned protection department 1210B.In another embodiment, the first patterned protection department 1210B and
Two patterned protection department 1220B are overlapped or interlaced.The product body induction structure as made by above-mentioned manufacturing method 800
1000B, the related description of the quality factor for the inductance that is improved disclose in the description of Yu Shangkai Fig. 4, to make theory of the present invention
It is bright succinct, it is not repeated in this.
In another embodiment, also referring to Fig. 5 and Fig. 8, the step of forming capacitor, includes: forming first kind substrate
1410C；First kind well 1420C is formed on first kind substrate 1410C and being coupled to ground terminal GND；Form Second Type
Doped region 1430C is in first kind well 1420C and is coupled to patterned protective layer 1200C；And form polysilicon resistance 1500C
Above first kind well 1420C and it is coupled to protection ring 1100.The manufacturing method 800 of product body induction structure further includes: coupling
Control line 1600 is in protection ring 1100；And the control signal Scon provided by control line 1600 is to be connected first kind well
1420C and Second Type doped region 1430C.In another embodiment, patterned protective layer is formed to be coupled to guarantor through capacitor
The step of retaining ring, includes: forming the first metal layer of the first patterned protection department 1210C Yu Jiti induction structure 1000C, and coupling
It is connected to Second Type doped region 1430C；And form the of the second patterned protection department 1220C Yu Jiti induction structure 1000C
Two metal layers, and it is coupled to the first patterned protection department 1210C.The product body induction structure as made by above-mentioned manufacturing method 800
1000C, the related description of the quality factor for the inductance that is improved disclose in the description of Yu Shangkai Fig. 5, to make theory of the present invention
It is bright succinct, it is not repeated in this.
In another embodiment, referring to Figure 6 together with Fig. 8, the manufacturing method 800 for accumulating body induction structure is further included: shape
At substrate 1900；The first polysilicon resistance 1500D is formed above substrate 1900, and is coupled to protection ring 1100；And it is formed
Second polysilicon resistance 1800 is above substrate 1900.In addition, forming patterned protective layer to be coupled to protection ring through capacitor
The step of include: form the first metal layer of the first patterned protection department 1210D Yu Jiti induction structure 1000D, and be coupled to
Second polysilicon resistance 1800；And form the second metal of the second patterned protection department 1220D Yu Jiti induction structure 1000D
Layer, and it is coupled to the first patterned protection department 1210D.In another embodiment, the first patterned protection department 1210D and the second figure
Case formula protection department 1220D is overlapped or interlaced.The product body induction structure 1000D as made by above-mentioned manufacturing method 800,
The related description of the quality factor of its inductance that is improved discloses in the description of Yu Shangkai Fig. 6, to make the present invention illustrate letter
It is clean, it is not repeated in this.
By aforementioned present invention embodiment it is found that using the embodiment of the present invention product body induction structure and its manufacturing method,
Patterned protective layer since its patterned protective layer is not directly grounded, and in it and capacitor overall structure form a filtering
Circuit, and be able to filter out direct current signal or low frequency signal, in this way, which will can avoid above-mentioned direct current signal or low frequency signal influences
The inductance of product body induction structure to promote the quality factor of inductance, and then promotes the efficiency of product body induction structure.In addition, above-mentioned
Capacitor can all configure its capacitance size according to actual demand, to filter out the signal of different frequency range.Furthermore the embodiment of the present invention
The more permeable structural improvement of product body induction structure further to control filter circuit (by capacitor and patterned protective layer institute shape
At) open or close, and then promote product body induction structure use flexibly degree, expand product body induction structure operation strategies.
Although disclosing specific embodiments of the present invention in embodiment above, however, it is not to limit the invention, this
Has usually intellectual in technical field that the present invention belongs to, in the case of not departing from the principle of the present invention and spirit, when can be to it
Carry out various changes and modification, therefore protection scope of the present invention is when being subject to subsidiary claim institute defender.
Claims (20)
1. a kind of long-pending body induction structure, includes:
One capacitor；
One protection ring (guard ring), is coupled to the capacitor；
One patterned protective layer, includes one first patterned protection department and one second patterned protection department, this is second patterned anti-
Shield portion is coupled to the protection ring or is coupled to the first patterned protection department, and this of the patterned protective layer is first patterned anti-
Shield portion is coupled to the protection ring through the capacitor, so that the patterned protective layer suspension joint；And
One inductance is configured on the protection ring and the patterned protective layer.
2. long-pending body induction structure according to claim 1, wherein the capacitor includes half variodenser of a gold medal oxygen, and the gold oxygen half becomes
Container includes:
One first kind substrate；
One Second Type well is formed on the first kind substrate；And
One Second Type doped region is formed in the Second Type well, and is coupled to the patterned protective layer；
Wherein the product body induction structure further includes:
One polysilicon resistance is formed in above the Second Type well, and is coupled to the protection ring.
3. long-pending body induction structure according to claim 2, wherein the first patterned protection department is coupled to the Second Type
Doped region；And
The second patterned protection department is coupled to the protection ring.
4. long-pending body induction structure according to claim 3, the wherein first patterned protection department and this is second patterned anti-
Shield portion is located at a first metal layer and a second metal layer for the product body induction structure, and the first patterned protection department with
The second patterned protection department is overlapped or interlaced.
5. long-pending body induction structure according to claim 2, wherein
The first patterned protection department is located at a first metal layer of the product body induction structure, and is coupled to Second Type doping
Area；And
The second patterned protection department is located at a second metal layer of the product body induction structure, and it is first patterned anti-to be coupled to this
Shield portion.
6. long-pending body induction structure according to claim 5, the wherein first patterned protection department and this is second patterned anti-
Shield portion is overlapped or interlaced.
7. long-pending body induction structure according to claim 1, wherein the capacitor includes half variodenser of a gold medal oxygen, and the gold oxygen half becomes
Container includes:
One first kind substrate；
One first kind well is formed on the first kind substrate, and is coupled to a ground terminal；And
One Second Type doped region is formed in the first kind well, and is coupled to the patterned protective layer；
Wherein the product body induction structure further includes:
One polysilicon resistance is formed in above the first kind well, and is coupled to the protection ring；
Wherein the protection ring is coupled to a control line, and the control signal provided by the control line is to be connected the first kind well and be somebody's turn to do
Second Type doped region.
8. long-pending body induction structure according to claim 7, wherein
The first patterned protection department is located at a first metal layer of the product body induction structure, and is coupled to Second Type doping
Area；And
The second patterned protection department is located at a second metal layer of the product body induction structure, and it is first patterned anti-to be coupled to this
Shield portion.
9. long-pending body induction structure according to claim 1, further includes:
One substrate；
One first polysilicon resistance is formed in above the substrate, and is coupled to the protection ring；And
One second polysilicon resistance is formed in above the substrate；
Wherein,
The first patterned protection department is located at a first metal layer of the product body induction structure, and is coupled to second polysilicon electricity
Resistance；And
The second patterned protection department is located at a second metal layer of the product body induction structure, and it is first patterned anti-to be coupled to this
Shield portion.
10. long-pending body induction structure according to claim 9, the wherein first patterned protection department and this is second patterned anti-
Shield portion is overlapped or interlaced.
11. a kind of manufacturing method of long-pending body induction structure, includes:
Form a capacitor；
A protection ring (guard ring) is formed to be coupled to the capacitor；
A patterned protective layer is formed, which includes one first patterned protection department and one second patterned protection
Portion, the second patterned protection department are coupled to the protection ring or are coupled to the first patterned protection department, the patterned protection
The first patterned protection department of layer is coupled to the protection ring through the capacitor, so that the patterned protective layer suspension joint；And
An inductance is formed on the protection ring and the patterned protective layer.
12. the manufacturing method of long-pending body induction structure according to claim 11, wherein the step of forming the capacitor includes:
Form a first kind substrate；
A Second Type well is formed on the first kind substrate；
A Second Type doped region is formed in the Second Type well and is coupled to the patterned protective layer；And
A polysilicon resistance is formed above the Second Type well and is coupled to the protection ring.
13. the manufacturing method of long-pending body induction structure according to claim 12, wherein forming the step of the patterned protective layer
Suddenly include:
It forms the first patterned protection department and is coupled to the Second Type doped region；And
It forms the second patterned protection department and is coupled to the protection ring.
14. the manufacturing method of long-pending body induction structure according to claim 13, wherein the first patterned protection department with should
Second patterned protection department is respectively formed in a first metal layer and a second metal layer for the product body induction structure, and this first
Patterned protection department and the second patterned protection department are overlapped or interlaced.
15. the manufacturing method of long-pending body induction structure according to claim 12, wherein forming the step of the patterned protective layer
Suddenly include:
The first patterned protection department is formed in a first metal layer of the product body induction structure, and is coupled to the Second Type and mixes
Miscellaneous area；And
The second patterned protection department is formed in a second metal layer of the product body induction structure, and it is first patterned to be coupled to this
Protection department.
16. the manufacturing method of long-pending body induction structure according to claim 15, wherein the first patterned protection department with should
Second patterned protection department is overlapped or interlaced.
17. the manufacturing method of long-pending body induction structure according to claim 11, wherein the step of forming the capacitor includes:
Form a first kind substrate；
A first kind well is formed on the first kind substrate and being coupled to a ground terminal；
A Second Type doped region is formed in the first kind well and is coupled to the patterned protective layer；And
A polysilicon resistance is formed above the first kind well and is coupled to the protection ring；
Wherein the manufacturing method of the product body induction structure further includes:
A control line is coupled in the protection ring；And
The control signal provided by the control line is to be connected the first kind well and the Second Type doped region.
18. the manufacturing method of long-pending body induction structure according to claim 17, wherein forming the step of the patterned protective layer
Suddenly include:
The first patterned protection department is formed in a first metal layer of the product body induction structure, and is coupled to the Second Type and mixes
Miscellaneous area；And
The second patterned protection department is formed in a second metal layer of the product body induction structure, and it is first patterned to be coupled to this
Protection department.
19. the manufacturing method of long-pending body induction structure according to claim 11, further includes:
Form a substrate；
One first polysilicon resistance is formed above the substrate, and is coupled to the protection ring；And
One second polysilicon resistance is formed above the substrate；
The step of wherein forming the patterned protective layer includes:
The first patterned protection department is formed in a first metal layer of the product body induction structure, and is coupled to second polysilicon
Resistance；And
The second patterned protection department is formed in a second metal layer of the product body induction structure, and it is first patterned to be coupled to this
Protection department.
20. the manufacturing method of long-pending body induction structure according to claim 19, wherein the first patterned protection department with should
Second patterned protection department is overlapped or interlaced.
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| CN108155177B (en) * | 2016-12-02 | 2020-10-23 | 瑞昱半导体股份有限公司 | Integrated inductor and method for manufacturing the same |
| TWI750036B (en) * | 2021-02-20 | 2021-12-11 | 瑞昱半導體股份有限公司 | Shield structure and inductor device |
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| US6236101B1 (en) * | 1997-11-05 | 2001-05-22 | Texas Instruments Incorporated | Metallization outside protective overcoat for improved capacitors and inductors |
| CN104218020A (en) * | 2013-06-05 | 2014-12-17 | 中芯国际集成电路制造(上海)有限公司 | Patterned ground shield structure and semiconductor device |
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| JP2005006153A (en) * | 2003-06-13 | 2005-01-06 | Nec Electronics Corp | Voltage controlled oscillator |
| US7323948B2 (en) * | 2005-08-23 | 2008-01-29 | International Business Machines Corporation | Vertical LC tank device |
| TWI303957B (en) * | 2006-12-11 | 2008-12-01 | Ind Tech Res Inst | Embedded inductor devices and fabrication methods thereof |
| US8169050B2 (en) * | 2008-06-26 | 2012-05-01 | International Business Machines Corporation | BEOL wiring structures that include an on-chip inductor and an on-chip capacitor, and design structures for a radiofrequency integrated circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6236101B1 (en) * | 1997-11-05 | 2001-05-22 | Texas Instruments Incorporated | Metallization outside protective overcoat for improved capacitors and inductors |
| CN104218020A (en) * | 2013-06-05 | 2014-12-17 | 中芯国际集成电路制造(上海)有限公司 | Patterned ground shield structure and semiconductor device |
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