CN105990188A - Heating device used for semiconductor fast annealing and control method - Google Patents

Heating device used for semiconductor fast annealing and control method Download PDF

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Publication number
CN105990188A
CN105990188A CN201510101238.8A CN201510101238A CN105990188A CN 105990188 A CN105990188 A CN 105990188A CN 201510101238 A CN201510101238 A CN 201510101238A CN 105990188 A CN105990188 A CN 105990188A
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module
pwm signal
heating
igbt
tube group
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CN105990188B (en
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董旭
崔志国
熊敏
李华
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/021—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of more than one type of element or means, e.g. BIMOS, composite devices such as IGBT

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Control Of Resistance Heating (AREA)

Abstract

The invention relates to a heating device used for semiconductor fast annealing and a control method. The heating device includes a power source module, a rectifying and filtering module, an IGBT (insulated gate bipolar transistor) module, a PWM (pulse width modulation) signal driving module, a heating lamp tube group and a computer control system; the power source module is connected with the rectifying and filtering module; the IGBT module comprises an input port, a control port and an output port; the rectifying and filtering module is connected with the input port of the IGBT module; the PWM signal driving module is connected with the control port of the IGBT module; the PWM signal driving module is controlled through the computer control system and is used for controlling the on-off time of the IGBT so as to adjust the heating power of the heating lamp tube group; and the heating lamp tube group is connected with the output port of the IGBT module and is used for device heating. With the heating device used for semiconductor fast annealing and the control method of the invention adopted, an overshoot phenomenon in a fast heating process can be effectively suppressed, stable temperature rise can be realized, and at the same time, the instability of heating caused by stroboflash can be avoided, and the service lives of lamp tubes can be prolonged.

Description

A kind of heater for quasiconductor short annealing and control method
Technical field
The present invention relates to semiconductor fabrication process field, particularly for heat treatment device and Method for heating and controlling.
Background technology
At present, the Equipment for Heating Processing of tradition rta technique, by the method regulating thyristor operating angle, is adjusted Joint fluorescent tube radiant power, reaches the effect being rapidly heated.But, due to the restriction in controllable silicon regulation dead band, Simultaneously for avoid the heating rate in heating process too fast, the general way using radiation fluorescent tube stroboscopic realizes fast Heating rate stable in fast annealing technique and constant annealing temperature, therefore, bring and constitute an inconvenience in that, In rta technique heat treatment process, the heating fluorescent tube cycle strobe of controllable silicon regulation is longer, has a strong impact on liter The stability of temperature during temperature, heating fluorescent tube switchs the use longevity also having influence on heating fluorescent tube frequently simultaneously Life.It addition, in the control method driving controllable silicon regulation lamp works, generally use pid algorithm (to close Ring control algolithm), it is achieved the purpose of controllable silicon regulation fluorescent tube heating, this kind of control method is inevitably drawn Enter temperature overshot, affect the temperature stability of annealing process equally.
Summary of the invention
The technical problem to be solved be to provide a kind of heater for quasiconductor short annealing and Control method, by use insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) directly drive lamp works method, in conjunction with pulse width modulation (Pulse Width Modulation, PWM) signal drives IGBT work so that heating fluorescent tube is in approximately continuous duty, reaches to press down Make punching, extend the beneficial effect heating fluorescent tube service life.
Create purpose to reach foregoing invention, present invention employs following technical scheme:
A kind of heater for quasiconductor short annealing, including power module, rectification filtering module, IGBT Module, pwm signal drive module, computer control system and several heating light tube group；Described power supply mould Block connects described rectification filtering module；Described IGBT module comprise input port, drive signal control port and And the output port corresponding with IGBT input port, described rectification filtering module connects described IGBT input Port, described rectification filtering module output unidirectional current is that described IGBT module is powered；Described computer controls system Uniting drives module to be used for controlling pwm signal dutyfactor value by control pwm signal；Described pwm signal Drive module to connect described driving signal and control port, control described IGBT module for output pwm signal It is turned on and off the time, and then regulates described heating light tube group radiant power；Described heating light tube group is with described The output port that IGBT input port is corresponding connects, and is used for generating heat.
Further, also include that a computer system drives module to be connected with described pwm signal, be used for controlling With the dutycycle regulating described pwm signal；The frequency of described pwm signal is between 1kHz to 30kHz
Further, the quantity of the output port that described IGBT input port is corresponding is 3, described heating lamp The quantity of pipe group is 3 groups, and each described output port is connected with a described heating light tube group respectively.
Further, described heating light tube group is made up of several halide-tungsten fluorescent lamps.
The present invention also provides for a kind of control method for quasiconductor short annealing heater, including following step Rapid:
Step 1: be sequentially connected with a power module, rectification filtering module, IGBT module and several heating lamps Pipe group；Described power module is that described IGBT module is powered by described rectification filtering module output unidirectional current； One pwm signal drives module to be connected with a computer control system and described IGBT module respectively；
Step 2: input heating rate x, described heating in the computer control system be preset with heating curve Heating rate x required when equilibrium temperature z of device and arrival one switching point temperature T0；
Described computer control system controls described pwm signal according to described programming rate x and drives module to institute State IGBT module and export the first pwm signal dutycycle D1, make described heating by described IGBT module Light tube group is in heating mode；Wherein, described first pwm signal dutycycle D1 and described programming rate x Relation obtained by formula 1:
D 1 = ( x - 3.629 ) / 0.9 0 < x &le; 300 ( x - 1.716 ) / 0.927 300 < x &le; 350 ( x - 0.434 ) / 0.945 350 < x &le; 400 ( x + 2.193 ) / 0.98 400 < x &le; 450 ( x + 6.042 ) / 1.03 450 < x &le; 500 ( x + 11.277 ) / 1.099 500 < x &le; 550 ( x + 13.526 ) / 1.1121 550 < x < 600 Formula 1
Wherein, x unit DEG C/s, D1 are dimensionless number；
Wherein, described computer control system is inquired about under described heating rate x flat with described according to formula 2 Switching temperature T that weighing apparatus temperature z is corresponding；
T = z 100 x - 5 x - 1.3 z + 460 200 &le; x &le; 300 - 4 x + 1.3 z + 720 300 < x &le; 400 - 4 x - 1.75 z + 1160 400 < x &le; 500 - 4 x - 1.35 z + 1310 500 < x &le; 600 Formula 2
Wherein, T unit is DEG C, and z unit is DEG C；
Step 3: when described heating light tube group Current Temperatures and described switching temperature T-phase while, described computer Control system controls described pwm signal and drives module to export the second pwm signal dutycycle D2, makes described IGBT module drives described heating light tube group to be in holding mode so that described heater is gradually cut from described Change after a temperature gradually rises to described equilibrium temperature constant, wherein, described second pwm signal dutycycle D2 is obtained by formula 3:
D 2 = 7.68926 + 411.01498 1 + 10 ( 3954.39853 - x 0 ) * 6.27941 E - 4 ) Formula 3；
Wherein, D2 is dimensionless number；And described x0For Celsius temperature to digital switch, dimensionless, by public affairs Formula 4 obtains,
x 0 = 9588.3 + z 2.621 E - 6 - 0.1585 2.621 E - 6 Formula 4
Wherein, z is equilibrium temperature, and unit is DEG C.
Further, the dutycycle difference of described first pwm signal, the second pwm signal；Described first Pwm signal, the figure place of the second pwm signal are between 10 to 20；A described PWM letter Number, the second pwm signal frequency is all between 1kHz to 30kHz.
Further, described switching point temperature is 5 DEG C to 150 DEG C with the difference range of described balance point temperature.
Further, described heating rate x, x0Scope is between 5～150 DEG C/s.
Further, described equilibrium temperature scope is 200～600 DEG C.
Beneficial effects of the present invention:
In sum, a kind of heater for quasiconductor short annealing of present invention offer and control method, Using the method that IGBT module directly drives lamp works, the pwm signal in conjunction with 1kHz to 30kHz drives Dynamic IGBT module work so that fluorescent tube is in approximately continuous duty, compare in real time Current Temperatures with under Difference between one balance point temperature set, the equilibrium temperature set when real time temperature distance reaches switching point temperature Dutyfactor value after angle value, needed for switching duty cycle value to the balance point temperature set, it is achieved stable intensification, Restrained effectively the temperature overshot occurred in rapid heating condition, reduce stroboscopic simultaneously and bring heating not Stability, it is achieved simple in construction, beneficial effect safe and stable, efficient, and reach prolonging lamp tube and make By the purpose in life-span.
Accompanying drawing explanation
Fig. 1 is the embodiment of the present invention schematic diagram for the heater of quasiconductor short annealing.
Detailed description of the invention
In order to preferably illustrate technical characterstic and the structure of the present invention, below in conjunction with the preferred embodiments of the present invention And accompanying drawing is described in detail.
Refering to Fig. 1, a kind of heater for quasiconductor short annealing, including power module 10, rectification Filtration module 20, IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) mould Block 40, PWM (pulse width modulation) signal drive module 30 and the heating fluorescent tube of several fluorescent tubes composition Group 50；Drive module 30 to be connected including a computer system 60 and described pwm signal, for controlling and Regulate the dutycycle of described pwm signal.Power module 10 connects rectification filtering module 20, is used for as this reality Execute the power DC source that the heater offer of example is stable.Described IGBT module 40 include input port 41, Control port 42 and the output port 43 corresponding with described input port 41；Rectification filtering module 20 connects defeated Inbound port 41, being used for exporting galvanic current is that IGBT module 40 is powered；Pwm signal drives module 30 connect control port 42, control IGBT module 40 for output pwm signal and are turned on and off the time, And then regulation heating light tube group 50 radiant power；Heating light tube group 50 is with IGBT module output port 43 even Connect, be used for generating heat.
It should be noted that IGBT module 40 is made up of double pole triode and insulating gate type field effect tube Compound full-control type voltage driven type power semiconductor, the IGBT module of the big electric current of specially 1800A, There is high input impedance and the characteristic of low conduction voltage drop.In the course of the work, produce drive power little, switch The beneficial effect that speed is fast, conduction voltage drop is low, current carrying density is big.
Specifically, it is 10kHz that the present embodiment chooses the operating frequency of pwm signal, and this pwm signal drives Module 30 exports the pwm signal control IGBT module 40 of 10kHz and works.Power module 10 exports three Cross streams electricity, is connected to the input of IGBT module 40 after being converted into unidirectional current by rectification filtering module 20 Mouth 41.Wherein, heating light tube group 50 totally three groups, often group includes 9 halide-tungsten fluorescent lamps, with every three fluorescent tube strings After connection, then mode in parallel connects, and equivalent resistance resistance is a halogen tungsten lamp tube resistor.Output port 43 Quantity be 3, each output port 43 is respectively with heating light tube group 50 (i.e. 9 fluorescent tubes) even Connect.The radiation that halide-tungsten fluorescent lamp is this heater heating used, single power is 1500W.Need explanation , during halide-tungsten fluorescent lamp work, resistance is big compared with normal temperature resistance value, so wanting when selecting IGBT maximum operating currenbt Avoid puncturing IGBT module when to heating lamp tube power supply, drive the pwm signal frequency of IGBT work to want Within IGBT maximum operation frequency, then the operating frequency of the halide-tungsten fluorescent lamp that IGBT controls is PWM letter Number frequency, therefore completely avoid heating light tube group 50 and is in stroboscopic state, it is ensured that stablizing of heating process Property, prolonging lamp tube 50 service life.
The embodiment of the present invention also provides for the control method of the heater for quasiconductor short annealing, including with Lower step:
Step 1: be sequentially connected with a power module 10, rectification filtering module 20, IGBT module 40 and some Individual heating light tube group 50；It is institute that described power module 10 exports unidirectional current by described rectification filtering module 20 State IGBT module 40 to power；One pwm signal drive module 30 respectively with a computer control system 60 And described IGBT module 40 connects；
Step 2: when temperature-rise period starts, described computer control system controls described according to described heating curve Pwm signal drives module to export the first pwm signal to described IGBT module, drives described IGBT mould Block makes described heating light tube group be in heating mode, and now heating light tube group is normal according to the heating rate set Work.
Heating rate x and described heater is inputted in the computer control system be preset with heating curve Equilibrium temperature z and required heating rate x when arriving switching point temperature T0.Wherein, described liter Temperature speed x is that the empirical equation (1) drawn by the simulation of repeatedly temperature-rise period judges to draw, concrete experience is public Formula is:
D 1 = ( x - 3.629 ) / 0.9 0 < x &le; 300 ( x - 1.716 ) / 0.927 300 < x &le; 350 ( x - 0.434 ) / 0.945 350 < x &le; 400 ( x + 2.193 ) / 0.98 400 < x &le; 450 ( x + 6.042 ) / 1.03 450 < x &le; 500 ( x + 11.277 ) / 1.099 500 < x &le; 550 ( x + 13.526 ) / 1.1121 550 < x < 600 (1)
Wherein x is heating rate, unit DEG C/s, and the scope of being manually entered is generally 5～150 DEG C/s；D1 is PWM Signal dutyfactor value, frequency is between 1～30kHz.
Once equilibrium temperature, heating rate set, and computer control system just can find from heating curve Under current heating rate x, with equilibrium temperature z corresponding switching point temperature T set, switching point temperature is corresponding Formula:
T = z 100 x - 5 x - 1.3 z + 460 200 &le; x &le; 300 - 4 x + 1.3 z + 720 300 < x &le; 400 - 4 x - 1.75 z + 1160 400 < x &le; 500 - 4 x - 1.35 z + 1310 500 < x &le; 600 Formula (2)
Wherein x is heating rate, unit DEG C/s, and the scope of being manually entered is generally 5～150 DEG C/s；Z is balance Point temperature value, unit is DEG C；T is switching point temperature, and unit is DEG C.
Step 3: after a period of time, when described heating light tube group Current Temperatures and equilibrium temperature exist a difference, It is about 5～150 DEG C of scopes, and when this Current Temperatures has reached described switching temperature T, described computer controls System controls described pwm signal and drives module that by D1, the dutycycle of pwm signal is switched to D2, adds The heating rate of hot light tube group changes into x0, make described IGBT module drive described heating light tube group to be in insulation Pattern.
And suitable pwm signal dutyfactor value D2 corresponding to equilibrium temperature is obtained by below equation (3):
D 2 = 7.68926 + 411.01498 1 + 10 ( 3954.39853 - x 0 ) * 6.27941 E - 4 ) - - - ( 3 )
Wherein x0For reaching the heating rate after switching point temperature T, unit DEG C/s, scope is generally 5～150 DEG C/s；x0Obtained by formula (4)；
x 0 = 9588.3 + z 2.621 E - 6 - 0.1585 2.621 E - 6 - - - ( 4 )
Wherein z is balance point temperature value, and unit is DEG C；Z span is between 200 DEG C to 600 DEG C, i.e. By self-defined input.
Wherein, the dutycycle of described second pwm signal is different from the first pwm signal dutycycle, and described One pwm signal dutyfactor value is obtained by formula (1), and described second pwm signal dutyfactor value passes through Formula (3) (4) obtains, and is adjusted by computer control system, and the second pwm signal is delivered to IGBT Module, and then control its change duty, it is finally reached control heating light tube group and is in Low emissivity power Mode of operation or stopping heating work, and then make described heater gradually from described switching point temperature gradually After rising to described equilibrium temperature constant, it is to avoid the situation of temperature overshot occurs.
As can be seen here, the present invention utilizes the basic parameter of temperature curve, regulates the dutycycle of described pwm signal. Specifically, it is the equilibrium temperature of temperature curve, heating rate and the switching point temperature preset by anticipation, if Determine the size of dutyfactor value so that heat up and move closer to required equilibrium temperature value, effectively suppression temperature mistake Punching.By pre-decision analysis, at temperature-rise period by regulation pwm signal dutyfactor value in real time, control fluorescent tube Radiant power, it is ensured that stable heating rate.It is warmed up in thermostatic process, Pre-handoff pwm signal duty Ratio, switching time and switching duty cycle size need to be obtained by formula (2), can suppress temperature overshot.
Specifically, in the present invention, the figure place of pwm signal is between 10 to 20.The present embodiment is chosen First pwm signal, the figure place of the second pwm signal are 12.The frequency of the control signal of IGBT output Identical with the operating frequency of heating light tube group.
It should be noted that the figure place of pwm signal determines the control accuracy of this halide-tungsten fluorescent lamp radiant power, DC voltage after the conversion of rectification filtering module 20 output determines the running voltage of halide-tungsten fluorescent lamp, this enforcement Choose the radiant power of 12 pwm signal regulation heating light tube group 50, it is ensured that dutycycle has preferably Degree of regulation, thus effectively promote the control accuracy to halide-tungsten fluorescent lamp radiant power.
In sum, a kind of heater for quasiconductor short annealing of present invention offer and control method, Using the method that IGBT module directly drives lamp works, the pwm signal in conjunction with 1kHz to 30kHz drives Dynamic IGBT module work so that fluorescent tube is in continuous print duty, then is accounted for by anticipation analysis method setting Empty ratio, it is achieved stable intensification, restrained effectively the overshoot phenomenon occurred in rapid heating condition, simultaneously Reduce stroboscopic and bring the unstability of heating, it is achieved simple in construction, beneficial effect safe and stable, efficient, And reach the purpose of prolonging service life of lamp tube.
The above embodiment of the present invention is only for clearly demonstrating example of the present invention, and is not right The restriction of embodiments of the present invention.For those of ordinary skill in the field, in described above On the basis of can also make change or the variation of other multi-forms.Here without also cannot be to all of enforcement Mode gives exhaustive.All any amendment, equivalents made within the spirit and principles in the present invention and changing Enter, within should be included in the protection domain of the claims in the present invention.

Claims (9)

1. the heater for quasiconductor short annealing, it is characterised in that include power module (10), Rectification filtering module (20), IGBT module (40), pwm signal drive module (30), computer control system (60) and heating light tube group (50)；Described power module (10) connects described rectification filtering module (20)；Described IGBT module (40) comprise input port (41), drive signal control port (42) and and with IGBT input The output port (43) that mouth is corresponding, described rectification filtering module (20) connects described IGBT input port (41), institute Stating rectification filtering module (20) output unidirectional current is described IGBT module (40) power supply；Described computer controls system System (60) drives module (30) to control pwm signal dutyfactor value by pwm signal；Described PWM Signal drives module (30) to connect described driving signal control port (42), controls institute for output pwm signal State IGBT module (40) and be turned on and off the time, and then regulate described heating light tube group (50) radiant power；Institute State heating light tube group (50) output port (43) corresponding with described IGBT input port to connect, be used for generating heat.
Heater for quasiconductor short annealing the most according to claim 1, it is characterised in that The frequency of described pwm signal is between 1kHz to 30kHz.
Heater for quasiconductor short annealing the most according to claim 1, it is characterised in that The quantity of the output port (43) that described IGBT input port is corresponding is 3, described heating light tube group (50) Quantity is 3 groups, and each described output port (43) is connected with a described heating light tube group (50) respectively.
Heater for quasiconductor short annealing the most according to claim 3, it is characterised in that Described heating light tube group (50) is made up of several halide-tungsten fluorescent lamps.
5. the control method for quasiconductor short annealing heater, it is characterised in that include following step Rapid:
Step 1: be sequentially connected with a power module, rectification filtering module, IGBT module and several heating lamps Pipe group；Described power module is that described IGBT module is powered by described rectification filtering module output unidirectional current； One pwm signal drives module to be connected with a computer control system and described IGBT module respectively；
Step 2: input heating rate x in computer control system, equilibrium temperature z obtains heating curve letter Breath；
Described computer control system controls described pwm signal according to described programming rate x and drives module to institute State IGBT module and export the first pwm signal dutycycle D1, make described heating by described IGBT module Light tube group is in heating mode；Wherein, described first pwm signal dutycycle D1 and described programming rate x Relation obtained by formula 1:
D 1 = ( x - 3.629 ) / 0.9 0 < x &le; 300 ( x - 1.716 ) / 0.927 300 < x &le; 350 ( x - 0.434 ) / 0.945 350 < x &le; 400 ( x + 2.193 ) / 0.98 400 < x &le; 450 ( x + 6.042 ) / 1.03 450 < x &le; 500 ( x + 11.277 ) / 1.099 500 < x &le; 550 ( x + 13.526 ) / 1.112 550 < x < 600 Formula 1
Wherein, x unit DEG C/s, D1 are dimensionless number；
Wherein, described computer control system is inquired about under described heating rate x flat with described according to formula 2 Switching temperature T that weighing apparatus temperature z is corresponding；
T = z 100 x - 5 x - 1.3 z + 460 200 &le; x &le; 300 - 4 x - 1.3 z + 720 300 < x &le; 400 - 4 x - 1.75 z + 1160 400 < x &le; 500 - 4 x - 1.35 z + 1310 500 < x &le; 600 Formula 2
Wherein, T unit is DEG C, and z unit is DEG C；
Step 3: when described heating light tube group Current Temperatures and described switching temperature T-phase while, described computer Control system controls described pwm signal and drives module to export the second pwm signal dutycycle D2, makes described IGBT module drives described heating light tube group to be in holding mode so that described heater is gradually cut from described Change after a temperature gradually rises to described equilibrium temperature constant, wherein, described second pwm signal dutycycle D2 is obtained by formula 3:
D 2 = 7.68926 + 411.01498 1 + 10 ( 3954.39853 - x 0 ) * 6.27941 E - 4 ) Formula 3；
Wherein, D2 is dimensionless number；And described x0For Celsius temperature to digital switch, dimensionless, by public affairs Formula 4 obtains,
x 0 = 9588.3 + z 2.621 E - 6 - 0.1585 2.621 E - 6 Formula 4
Wherein, z is equilibrium temperature, and unit is DEG C.
Control method the most according to claim 5, it is characterised in that described first pwm signal, The dutycycle of the second pwm signal is different；Described first pwm signal, the second pwm signal figure place equal It is between 10 to 20；Described first pwm signal, the second pwm signal frequency are all at 1kHz extremely Between 30kHz.
Control method the most according to claim 5, it is characterised in that described switching point temperature is with described The difference range of balance point temperature is 5 DEG C to 150 DEG C.
Control method the most according to claim 5, it is characterised in that described heating rate x, x0Model Enclose and be between 5～150 DEG C/s.
Control method the most according to claim 5, it is characterised in that described equilibrium temperature scope is 200～600 DEG C.
CN201510101238.8A 2015-03-06 2015-03-06 A kind of heating device and control method for semiconductor short annealing Active CN105990188B (en)

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CN103339712A (en) * 2011-02-09 2013-10-02 住友重机械工业株式会社 Laser annealing method and laser annealing apparatus
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