CN105977336A - Quantum dot infrared detection and display device and production method thereof - Google Patents
Quantum dot infrared detection and display device and production method thereof Download PDFInfo
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- CN105977336A CN105977336A CN201610371315.6A CN201610371315A CN105977336A CN 105977336 A CN105977336 A CN 105977336A CN 201610371315 A CN201610371315 A CN 201610371315A CN 105977336 A CN105977336 A CN 105977336A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 15
- 238000001514 detection method Methods 0.000 title abstract description 5
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- 239000005725 8-Hydroxyquinoline Substances 0.000 claims description 6
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 6
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- 239000010406 cathode material Substances 0.000 claims description 4
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- ADPVVOGYDXFFJY-UHFFFAOYSA-N 4-(4-aminophenyl)-3-(2-methylphenyl)aniline Chemical compound CC1=CC=CC=C1C1=CC(N)=CC=C1C1=CC=C(N)C=C1 ADPVVOGYDXFFJY-UHFFFAOYSA-N 0.000 claims description 3
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- 238000004020 luminiscence type Methods 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
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- 239000005387 chalcogenide glass Substances 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
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- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 1
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- 206010034960 Photophobia Diseases 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- GNHQSAUHXKRQMC-UHFFFAOYSA-N benzene;chlorine Chemical compound [Cl].C1=CC=CC=C1 GNHQSAUHXKRQMC-UHFFFAOYSA-N 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- MILUBEOXRNEUHS-UHFFFAOYSA-N iridium(3+) Chemical compound [Ir+3] MILUBEOXRNEUHS-UHFFFAOYSA-N 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
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- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention relates to a quantum dot infrared detection and display device and a production method thereof, and belongs to the nanometer semiconductor material and photoelectric device production field. The quantum dot infrared detection and display device comprises a base, an anode, a hole barrier layer (and electron transmission layer), an infrared photosensitive layer, a light-emitting layer, an electron transmission layer, and a cathode. The quantum dot infrared detection and display device is produced by sequentially depositing the anode, the hole barrier layer (and electron transmission layer), the infrared photosensitive layer, the light-emitting layer, the electron transmission layer, and the cathode on the base by adopting the film growth way. The layers of the films are reduced, and the production costs are low, and therefore the large scale production is facilitated, and the electrons and the holes generated by the quantum dots are respectively transmitted to the hole barrier layer and the light-emitting layer quickly by a three-dimensional network structure formed by electron transmission materials and hole transmission materials.
Description
Technical field
The present invention relates to a kind of quantum dot infrared acquisition and display device and preparation method thereof, belong to nanometer and partly lead
Body material and photoelectric device preparation field thereof.
Background technology
Infrared acquisition and imaging technique have very importantly practical value, environmental monitoring, weather forecast,
Astronomical observation and military field have and applies widely.At present, Infrared Detectors (or the thermal imagery of main flow
Instrument) can be divided into according to operating temperature: refrigeration mode and non-refrigeration type two kinds.General refrigeration type infrared detector
Being operated under liquid nitrogen temperature, detectivity is higher, and dark current is relatively low, but its refrigeration equipment volume is relatively big, manufactures
Relatively costly, it is unfavorable for Miniaturization Design and production, is generally used for military field.Non-refrigeration type infrared acquisition
Device works at normal temperatures, and detection performance is generally not as the Infrared Detectors (or thermal imaging system) of refrigeration mode, but its system
Cause this low relative to refrigeration mode, be usually used in commercial field.Both detectors (or thermal imaging system) are equal
Need detecting element that infrared signal is converted into the signal of telecommunication, then pass the signal along to display by reading circuit and set
Show on Bei.Owing to reading circuit is different with the material of detecting element, generally by upside-down mounting interconnection technology
Both are packaged together.Upside-down mounting interconnection technique success rate is the highest, causes the cost of detector to remain high.
In order to preferably solve this problem, upconversion technology alternatively causes people wide
General concern and research.Based on different structures and principle, optically converter can be divided into two big classes: a class device
Part is by rare earth element, after two or more photoelectric absorption, is changed into shorter wavelengths of light emission and goes out
Go；Another kind of device is first to be absorbed by light wave and be changed into photo-generated carrier, then will be carried by extra electric field
Stream is transported to luminescent layer, by exciting luminescent layer to launch the light of required wavelength.This device can be with people
For designing and the wavelength of selective exitation light, for the ease of the transmission of carrier, it usually needs multilayer electronic transmits
Layer and hole transmission layer.But multi-layer film structure adds the complexity of device architecture, reduce prepared by device
Success rate, too increases the cost of manufacture, complex process, it is difficult to large-scale production simultaneously.
Summary of the invention
The invention aims to provide a kind of quantum dot infrared acquisition and display device and preparation method thereof,
This device architecture is simple, easily manufactured, is integrated with display unit by probe unit, at device inside
Realize from long wave (infrared light) to the upconversion of shortwave (visible ray) show image.
It is an object of the invention to be achieved through the following technical solutions.
A kind of quantum dot infrared acquisition and display device, including: substrate, anode, hole blocking layer (electricity of holding concurrently
Sub-transport layer), infrared light sensitive layer, luminescent layer, electron transfer layer and negative electrode；Anode, hole blocking layer (are held concurrently
Electron transfer layer), infrared light sensitive layer, luminescent layer, electron transfer layer and negative electrode pass sequentially through coating growth
Method is deposited in substrate；Described infrared light sensitive layer be infrared Colloidal Quantum Dots, infrared Colloidal Quantum Dots with
Hole mobile material mixes, infrared Colloidal Quantum Dots mixes or infrared colloid with electron transport material
Quantum dot mixes with hole mobile material and electron transport material；
Described infrared Colloidal Quantum Dots is to have the relatively strong Colloidal Quantum Dots absorbed at infrared band；
Described infrared Colloidal Quantum Dots includes: PbS, PbSe, PbSxSe1-xWith one or more in PbTe.
Described hole mobile material includes: double [(two-4-toluidinos) phenyl] hexamethylene (TAPC) of 1-,
P3HT, N, N '-diphenyl-N, N ' (2-naphthyl)-(1,1 '-phenyl)-4,4 '-two amidos (NPB) and N,
In N '-diphenyl-N, N '-two (tolyl) benzidine (TPD) one or more.
Described electron transport material includes: 2,9-dimethyl-4,7-diphenyl-phenanthroline (BCP), C60、
Graphene (Graphene), TiO2, three-(8-hydroxyquinoline) aluminum (Alq3), one in ZnO and PCBM
Or it is multiple.
Described negative electrode or at least one electrode of anode are transparent or semitransparent, and when infrared incident illumination is from substrate side
When incidence, should select infrared light transparent or translucent substrate, the electrode of infrared light incident direction simultaneously
It is necessary for transparent or semitransparent.
Described anode material includes: tin-oxide (ITO), indium-zinc oxide (IZO), aluminum tin-oxide
(ATO), the one in aluminum zinc oxide (AZO) and CNT.
The material of described hole blocking layer (HBL) and electron transfer layer includes: 2,9-dimethyl-4,7-
Diphenyl-phenanthroline (BCP), TiO2, three-(8-hydroxyquinoline) aluminum (Alq3), in ZnO and PCBM one
Plant or multiple.
Described luminescent layer includes: three-(2-phenylpyridine) closes iridium (Ir (ppy)3), poly-[2-methoxyl group, 5-(2 '-
Second class-hexyloxy) phenylene vinylidene] (MEH-PPV), three-(8-hydroxyquinoline) aluminum (Alq3) or double [(4,
6-difluorophenyl)-pyridine-N, C2] pyridinecarboxylic closes one or more in iridium (III) (FIrpic).
Described cathode material includes: Ag, Ga, Mg, Al, LiF/Al, indium-zinc oxide (IZO), stannum
One in oxide (ITO), aluminum tin-oxide (ATO) or aluminum zinc oxide (AZO).
Described hole barrier layer thickness is 15nm-45nm.
Described infrared light sensitive layer thickness is 20nm-60nm.
Described light emitting layer thickness is 25nm-100nm.
Described electric transmission layer thickness is 10nm-60nm.
Electron transport material and the three-dimensional net structure of hole mobile material formation in described infrared sensitive layer can
Transmit to hole blocking layer and luminescent layer respectively with the electronics rapidly quantum dot produced and hole；
Substrate is plate glass, organic plastics, germanium wafer, silicon chip, zinc sulfide, zinc selenide, chalcogenide glass etc.
Material；
A kind of quantum dot infrared acquisition and the preparation method of display device, specifically comprise the following steps that
1. prepared by anode: plated by anode material by the method for magnetron sputtering or vacuum evaporation in clean substrate
System is at substrate surface.
2. the preparation of hole transmission layer: anode surface by vacuum evaporation, coating method by hole transport material
Material is grown in anode surface.
3. the preparation of infrared light sensitive layer: on hole transmission layer surface, infrared-sensitive material solution is coated in sky
On barrier layer, cave, dried formation infrared light sensitive layer.
4. the preparation of luminescent layer: according to the wavelength of required luminescence, selects suitable luminescent material, uses vacuum to steam
The method of plating, is deposited with infrared light sensitive layer surface by luminescent layer.
5. the preparation of electron transfer layer: electron transport material is grown in luminescent layer table by the method for vacuum evaporation
Face.
6. prepared by negative electrode: be deposited with on the surface of electron transfer layer by the method for vacuum evaporation by cathode material.
The preparation method of described infrared light sensitive material solution is: according to infrared Colloidal Quantum Dots, electric transmission
Material and the feature of hole mobile material, pass infrared Colloidal Quantum Dots, electron transport material and hole respectively
Defeated material is distributed to same organic solvent, or is distributed to respectively in the different organic solvent that can dissolve each other,
Form different organic solution.Then infrared light sensitive material is formed after these solution being mixed and are sufficiently stirred for
Solution, mass ratio shared by its mid-infrared Colloidal Quantum Dots is not less than 40%.
Beneficial effect
1, a kind of quantum dot infrared acquisition of the present invention and display device, due to use infrared quantum point monolayer,
Or infrared quantum point mixes as infrared quick with one or more in hole mobile material and electron transport material
Sense layer, it is possible to achieve: reduce the number of plies of thin film, low cost of manufacture, and electron transport material and hole transport
The three-dimensional net structure parcel Colloidal Quantum Dots that material is formed can be rapidly by electronics and the hole of quantum dot generation
Transmit to hole blocking layer and luminescent layer respectively.
2, a kind of quantum dot infrared acquisition of the present invention and display device, when infrared light is from substrate incident, institute
Substrate need can saturating infrared band；If base material can end visible ray, night vision device can be strengthened
Disguise；If base material to infrared band and visible light wave range the most transparent time, can be before and after device
Both sides imaging simultaneously.When device architecture uses reflective structure, visual intensity can be strengthened.
3, a kind of quantum dot infrared acquisition of the present invention and the preparation method of display device, manufacturing technique requirent letter
Single, low cost of manufacture, it is high that device is prepared as power, it is simple to large-scale production.
Accompanying drawing explanation
Fig. 1 is the transmission-type structural representation of device；
Fig. 2 is the negative electrode reflective structure schematic diagram of device；
Fig. 3 is the anode reflective structure schematic diagram of device；
Fig. 4 is the level structure schematic diagram of the first device；
Fig. 5 is the level structure schematic diagram of the second device；
Fig. 6 is the level structure schematic diagram of the third device.
Detailed description of the invention
For making the purpose of the present invention, content and advantage become apparent from, below in conjunction with the accompanying drawings and embodiment, to this
Bright detailed description of the invention is described in further detail.
Embodiment 1
As shown in Figure 1 and Figure 4, a kind of quantum dot infrared acquisition and display device, include successively substrate, anode,
Hole blocking layer, infrared light sensitive layer, luminescent layer, electron transfer layer and negative electrode；Substrate is glass, anode
For ITO, hole blocking layer be thick for 15nm ZnO layer, infrared light sensitive layer be PbSe quantum dot thick for 60nm
With the mixture of PCBM and P3HT, luminescent layer (30nm) is the Ir (ppy) of 5%3Mixing with the CBP of 95%
Layer, electron transfer layer is 10nm thickness BCP layer, and negative electrode is ATO electrode.Magnetron sputtering method is directly used to produce
The glass substrate of band ito thin film, use UV ozone to process ITO layer, obtain fresh ITO surface.
Then on ITO electrode surface, the 2-methyl cellosolve colloidal sol of coating zinc acetate dihydrate, drying at room temperature 15min
After be heated in atmosphere 300 DEG C keep 5min, formed ZnO layer.Infrared light sensitivity material is applied on ZnO surface
After material solution, drying at room temperature 10min forms infrared light sensitive layer.Finally send in vacuum coating equipment, be deposited with successively
Luminescent layer, electron transfer layer and electrode, form quantum dot infrared acquisition and display device.When using 980nm
Infrared light when being irradiated on device as shown in Figure 1, under the running voltage of 12V-30V, device can be launched
The green glow of 510nm.This device substrate and electrode are the most transparent, can be in the imaging of device both sides, and this device is used
Method be equivalent to be sequentially prepared PCBM electron transfer layer, PbSe quantum dot infrared absorption layer and P3HT hole
Transport layer.Under identical process conditions, this method at least reduces process prepared by twice film layer, preparation
Time reduces more than 4 hours, and element manufacturing success rate has risen to 81% from 47%, simultaneously at identical luminance
Under degree, running voltage declines 3V-5V.
Infrared light sensitive material solution manufacturing method is respectively PbSe quantum dot, PCBM and P3HT to be distributed to chlorine
Benzene is formed three kinds of solution, after being mixed according to the ratio of 2:1:1 by these three solution, forms infrared light sensitive material
Solution.
Embodiment 2
As shown in Figure 2 and Figure 5, a kind of quantum dot infrared acquisition and display device, include that substrate is infrared successively
With glass, the anode of visible ray be IZO, hole blocking layer be that thick for 20nm BCP layer, infrared light sensitive layer are
PbS quantum thick for 45nm is 7% with the mixed layer of Graphene (Graphene), luminescent layer (25nm)
Ir(ppy)3With the mixture layer of CBP of 93%, electron transfer layer be thick for 20nm BCP layer, negative electrode be Al electricity
Pole.Magnetron sputtering method is used to produce IZO membrane electrode on a glass substrate.At fresh IZO membrane electrode table
On face, use vacuum coating equipment evaporation BCP hole blocking layer.On BCP surface, coating infrared light sensitive material is molten
After liquid, drying at room temperature 15min forms infrared light sensitive layer.Finally send in vacuum coating equipment, be deposited with luminescence successively
Layer, electron transfer layer and electrode, form quantum dot infrared acquisition and display device.When using 850nm infrared light
When being irradiated on device as shown in figure, under the running voltage of 11V-24V, device can send the green glow of 510nm.
This device substrate is transparent, uses aluminum electrode as negative electrode, can pass through the reflection enhancement visual light imaging of aluminum electrode
Effect, and the method that used of this device be equivalent to be sequentially prepared Graphene (Graphene) electron transfer layer,
PbS quantum infrared absorption layer.Under identical process conditions, this method at least reduces a film layer and prepares
Process, preparation time reduce more than 2 hours, the success rate of element manufacturing has risen to 76% from 53%, with
Under Shi Xiangtong luminosity, running voltage declines 2V-6V.
Infrared light sensitive material solution manufacturing method is respectively PbS quantum to be distributed to normal octane, will aoxidize stone
Ink alkene is distributed in ethylene glycol, forms two kinds of solution, is formed after being mixed according to the ratio of 3:1 by both solution
Infrared light sensitive material solution.Graphene oxide in this solution can become Graphene during drying and forming-film.
Embodiment 3
As shown in Figure 3 and Figure 6, a kind of quantum dot infrared acquisition and display device, include successively substrate be silicon chip,
Anode be ITO layer, hole blocking layer be TiO thick for 45nm2, infrared light sensitive layer be PbS quantum thick for 45nm
Point and PbSe quantum dot and the mixture layer of PCBM and P3HT, luminescent layer be thick for 80nm MEH-PPV layer,
Electron transfer layer is the BCP layer that 60nm is thick, and negative electrode is ATO electrode.Use magnetron sputtering method raw on silicon chip
Long ito thin film electrode.Clean ito thin film electrode surface applies TiO2Quantum dot, drying at room temperature 8min
Rear formation hole blocking layer.At TiO2After surface coating infrared light sensitive material solution, drying at room temperature 12min is formed
Infrared light sensitive layer.Finally in vacuum coating equipment, it is deposited with luminescent layer, electron transfer layer and electrode successively,
Form quantum dot infrared acquisition and display device.It is irradiated on device as shown in figure when using 850nm infrared light
Time, under the running voltage of 20V-27V, device can send the HONGGUANG of 630nm.This device substrate is to corresponding ripple
The infrared light of section and the opaquest to the visible ray launched, but electrode is transparent, and infrared light negative electrode is incident, it is seen that
Light penetrates from negative electrode after anode reflection enhancement, and the method that this device is used is equivalent to be sequentially prepared PCBM
Electron transfer layer, PbSe quantum dot infrared absorption layer, PbS quantum infrared absorption layer and P3HT hole transport
Layer.Under identical process conditions, this method at least reduces process prepared by three film layers, preparation time
Reducing more than 5 hours, element manufacturing success rate has risen to 87% from 48%, simultaneously under same brightness, and work
Voltage declines 4V-7V.
Infrared light sensitive material solution manufacturing method be respectively by PbS quantum and PbSe quantum dot and PCBM and
P3HT is distributed to chlorobenzene, forms four kinds of solution, is formed after being mixed according to the ratio of 2:1:1:1 by these four solution
Infrared light sensitive material solution.
Embodiment 4
As shown in figures 1 to 6, a kind of quantum dot infrared acquisition and display device, include successively substrate be zinc sulfide,
Anode be ITO layer, hole blocking layer be TiO thick for 45nm2, infrared light sensitive layer be PbS quantum thick for 45nm
Point and PbSe quantum dot and the mixture layer of PCBM and P3HT, luminescent layer be thick for 80nm MEH-PPV layer,
Electron transfer layer is the BCP layer that 60nm is thick, and negative electrode is ATO electrode.Preparation method is as described in Example 3.This
Device substrate is to infrared light transparent, opaque to visible ray, and infrared light is launched from substrate incident, luminescent layer
Visible ray penetrates from negative electrode, and hidden effect is more preferable.
Claims (10)
1. a quantum dot infrared acquisition and display device, it is characterised in that: including: substrate, anode, sky
Barrier layer, cave, infrared light sensitive layer, luminescent layer, electron transfer layer and negative electrode；Anode, hole blocking layer,
Infrared light sensitive layer, luminescent layer, electron transfer layer and negative electrode pass sequentially through the method for coating growth and are deposited on base
At at the end；Described infrared light sensitive layer is infrared Colloidal Quantum Dots, infrared Colloidal Quantum Dots and hole mobile material
Mix, infrared Colloidal Quantum Dots and electron transport material mix or infrared Colloidal Quantum Dots and hole
Transmission material and electron transport material mix.
2. a kind of quantum dot infrared acquisition as claimed in claim 1 and display device, it is characterised in that: institute
Stating infrared Colloidal Quantum Dots is to have the relatively strong Colloidal Quantum Dots absorbed at infrared band.
3. a kind of quantum dot infrared acquisition as claimed in claim 1 or 2 and display device, it is characterised in that:
Described infrared Colloidal Quantum Dots includes: PbS, PbSe, PbSxSe1-xWith one or more in PbTe.
4. a kind of quantum dot infrared acquisition as claimed in claim 1 and display device, it is characterised in that: institute
State hole mobile material to include: 1-double [(two-4-toluidinos) phenyl] hexamethylene, P3HT, N, N '-
Diphenyl-N, N ' (2-naphthyl)-(1,1 '-phenyl)-4,4 '-two amidos and N, N '-diphenyl-N, N '-
In two (tolyl) benzidine one or more；Described electron transport material includes: 2,9-dimethyl-4,
7-diphenyl-phenanthroline, C60, Graphene, TiO2, three-(8-hydroxyquinoline) aluminum, in ZnO and PCBM
One or more.
5. a kind of quantum dot infrared acquisition as claimed in claim 1 and display device, it is characterised in that: institute
State negative electrode or at least one electrode of anode is transparent or semitransparent, and when infrared incident illumination is incident from substrate direction
Time, should select infrared light transparent or translucent substrate, the electrode of infrared light incident direction is necessary for simultaneously
Transparent or semitransparent.
6. a kind of quantum dot infrared acquisition as claimed in claim 1 and display device, it is characterised in that: institute
State anode material to include: tin-oxide, indium-zinc oxide, aluminum tin-oxide, aluminum zinc oxide and carbon are received
One in mitron；The material of described hole blocking layer and electron transfer layer includes: 2,9-dimethyl-4,
7-diphenyl-phenanthroline, TiO2, three-(8-hydroxyquinoline) aluminum, one or more in ZnO and PCBM；
Described luminescent layer includes: three-(2-phenylpyridine) closes iridium, poly-[2-methoxyl group, 5-(2 '-second class-hexyloxy)
Phenylene vinylidene], three-(8-hydroxyquinoline) aluminum or double [(4,6-difluorophenyl)-pyridine-N, C2] pyrrole
Pyridine formyl closes one or more in iridium (III)；Described cathode material includes: Ag, Ga, Mg, Al, LiF/Al,
One in indium-zinc oxide, tin-oxide, aluminum tin-oxide or aluminum zinc oxide；Described substrate is flat
The materials such as glass sheet, organic plastics, germanium wafer, silicon chip, zinc sulfide, zinc selenide, chalcogenide glass.
7. a kind of quantum dot infrared acquisition as described in claim 1 or 6 and display device, it is characterised in that:
Described hole barrier layer thickness is 15nm-45nm；Described infrared light sensitive layer thickness is 20nm-60nm；
Described light emitting layer thickness is 25nm-100nm；Described electric transmission layer thickness is 10nm-60nm.
8. a quantum dot infrared acquisition and the preparation method of display device, it is characterised in that: concrete steps are such as
Under:
1. prepared by anode: plated by anode material by the method for magnetron sputtering or vacuum evaporation in clean substrate
System is at substrate surface；
2. the preparation of hole transmission layer: anode surface by vacuum evaporation, coating method by hole transport material
Material is grown in anode surface；
3. the preparation of infrared light sensitive layer: on hole transmission layer surface, infrared-sensitive material solution is coated in sky
On barrier layer, cave, dried formation infrared light sensitive layer；
4. the preparation of luminescent layer: according to the wavelength of required luminescence, selects suitable luminescent material, uses vacuum to steam
The method of plating, is deposited with infrared light sensitive layer surface by luminescent layer；
5. the preparation of electron transfer layer: electron transport material is grown in luminescent layer table by the method for vacuum evaporation
Face；
6. prepared by negative electrode: be deposited with on the surface of electron transfer layer by the method for vacuum evaporation by cathode material.
A kind of quantum dot infrared acquisition the most as claimed in claim 8 and the preparation method of display device, it is special
Levy and be: the preparation method of described infrared light sensitive material solution is: according to infrared Colloidal Quantum Dots, electronics
Transmission material and the feature of hole mobile material, respectively by infrared Colloidal Quantum Dots, electron transport material and sky
Hole transport materials is distributed to same organic solvent, or is distributed to the different organic solvent that can dissolve each other respectively
In, form different organic solution；Then infrared light is formed after these solution being mixed and are sufficiently stirred for sensitive
Material solution.
A kind of quantum dot infrared acquisition the most as claimed in claim 8 or 9 and the preparation method of display device,
It is characterized in that: shared by described infrared Colloidal Quantum Dots, the mass ratio of infrared light sensitive material solution is not less than
40%.
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| CN107611281A (en) * | 2017-09-26 | 2018-01-19 | 中国科学院长春光学精密机械与物理研究所 | A kind of near-infrared is to visible ray upconverter and preparation method thereof |
| CN110197860A (en) * | 2019-05-29 | 2019-09-03 | 深圳扑浪创新科技有限公司 | Light emitting phototransistor and its preparation method and application is converted in one kind |
| CN110444620A (en) * | 2019-07-09 | 2019-11-12 | 上海科技大学 | A kind of quantum dot infrared up conversion device and preparation method thereof |
| CN113097332A (en) * | 2021-02-24 | 2021-07-09 | 重庆科技学院 | Wearable infrared imaging device |
| CN113984216A (en) * | 2021-10-26 | 2022-01-28 | 北京理工大学 | Infrared-multicolor up-conversion imaging focal plane device and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107611281A (en) * | 2017-09-26 | 2018-01-19 | 中国科学院长春光学精密机械与物理研究所 | A kind of near-infrared is to visible ray upconverter and preparation method thereof |
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| CN110444620A (en) * | 2019-07-09 | 2019-11-12 | 上海科技大学 | A kind of quantum dot infrared up conversion device and preparation method thereof |
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| CN113097332B (en) * | 2021-02-24 | 2022-08-23 | 重庆科技学院 | Wearable infrared imaging device |
| CN113984216A (en) * | 2021-10-26 | 2022-01-28 | 北京理工大学 | Infrared-multicolor up-conversion imaging focal plane device and preparation method thereof |
| CN114284436A (en) * | 2021-12-21 | 2022-04-05 | 广州光达创新科技有限公司 | Organic-inorganic hybrid short-wave infrared photoelectric detector, array formed by same and related preparation method |
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