CN105977317A - Preparation method of copper-indium-gallium-selenium solar battery absorption layer - Google Patents
Preparation method of copper-indium-gallium-selenium solar battery absorption layer Download PDFInfo
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- CN105977317A CN105977317A CN201610550956.8A CN201610550956A CN105977317A CN 105977317 A CN105977317 A CN 105977317A CN 201610550956 A CN201610550956 A CN 201610550956A CN 105977317 A CN105977317 A CN 105977317A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000010521 absorption reaction Methods 0.000 title abstract 5
- 239000011669 selenium Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 22
- 229910052711 selenium Inorganic materials 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 229910052733 gallium Inorganic materials 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 6
- 229910000058 selane Inorganic materials 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000005361 soda-lime glass Substances 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229910000807 Ga alloy Inorganic materials 0.000 claims description 3
- 238000004070 electrodeposition Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 239000005329 float glass Substances 0.000 claims description 3
- 239000011888 foil Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 229940065287 selenium compound Drugs 0.000 claims description 3
- 150000003343 selenium compounds Chemical class 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 78
- 239000013078 crystal Substances 0.000 abstract description 2
- 239000002355 dual-layer Substances 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 13
- NMHFBDQVKIZULJ-UHFFFAOYSA-N selanylideneindium Chemical compound [In]=[Se] NMHFBDQVKIZULJ-UHFFFAOYSA-N 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 7
- -1 In-Se compound Chemical class 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- RVIXKDRPFPUUOO-UHFFFAOYSA-N dimethylselenide Chemical compound C[Se]C RVIXKDRPFPUUOO-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- ALCDAWARCQFJBA-UHFFFAOYSA-N ethylselanylethane Chemical compound CC[Se]CC ALCDAWARCQFJBA-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method of a copper-indium-gallium-selenium solar battery absorption layer. The method comprises the following steps: step one, preparing an In-Se compound layer on a substrate; step two, preparing a Cu-In-Ga layer on the In-Se compound layer to obtain an In-Se/Cu-In-Ga dual-layer prefabricated layer; and step three, performing selenizing heat processing on the dual-layer prefabricated layer to obtain the copper-indium-gallium-selenium absorbed layer. The prepared copper-indium-gallium-selenium solar battery absorption layer can facilitate growth of crystal grains on the back surface of the copper-indium-gallium-selenium absorption layer, at the same time, regulates the band gap structure of the absorption layer, and improves the open-circuit voltages, the filling factor and the conversion efficiency of a copper-indium-gallium-selenium solar battery.
Description
Technical field
The present invention relates to thin film solar cell manufacturing technology field, particularly relate to a kind of CIGS (CIGS) sun
The preparation method of battery obsorbing layer.
Background technology
Solar cell, as the regenerative resource of clean environment firendly, is the most increasingly subject to people's attention.CIGS is thin
Film solar cell is a kind of novel solar cell technology, compares common solar cells based on silicon materials, has
Use the advantages such as material is few, low cost, radiation resistance are good, but also prepare flexibility the most on a flexible substrate
Solar cell, battery quality can be alleviated, that expands further solar cell installs and uses scope.It addition, copper and indium
Gallium selenium solar cell has higher conversion efficiency, and laboratory peak efficiency can reach 22.6%, already close to very
To exceeding crystal silicon cell efficiency.
In the production of CIGS solar cell, the quality of CIGS absorbed layer is the key determining battery efficiency.CIGS
Absorbed layer thin film mainly has two kinds of preparation technologies, a kind of be the copper (Cu) with simple substance, indium (In), gallium (Ga) and
Selenium (Se) is raw material, in vacuum chamber in the way of coevaporation in substrate deposit；Another kind is first with simple substance
Or alloy target material is that raw material uses magnetron sputtering mode to deposit copper and indium gallium preformed layer in substrate, then by preformed layer selenizing
For CIGS absorbed layer thin film.The technique of vacuum evaporation is readily available higher conversion efficiency, but in large-area system
Good uniformity it is extremely difficult in Bei, and the technique of sputtering and selenization technique, it is more beneficial for large-scale production.Day at present
This Solar Frontier company, uses the technique of sputtering and selenization technique to have been realized in the amount of CIGS solar cell
Produce.
The problem the most crucial is had to be exactly, in selenizing in CIGS absorbed layer prepared by the technique of sputtering and selenization technique
Time due to the reaction of selenium and indium more faster with the reaction of gallium than selenium, In can quickly move to absorbed layer surface, this
Can quickly form the CIGS phase that gallium content is low when resulting in selenizing on absorbed layer surface, and substantial amounts of gallium element is assembled
Interface to substrate Yu CIGS absorbed layer.This can cause the surface band gap of absorbed layer low, and back side band gap is high, and
And owing to gallium element is assembled overleaf, the crystalline quality causing the back side is poor, thus reduce the conversion efficiency of battery.
In order to optimize the distribution of gallium element in CIGS absorbed layer, and the crystalline quality of absorbed layer, high annealing and sulfuration
Technique is all widely used.But there is gallium content near back surface all the time in CIGS absorbed layer prepared by selenization process
Height, the problem that crystallite dimension is little.
Summary of the invention
Because the deficiencies in the prior art, the technical problem to be solved be improve absorbed layer crystallinity and
The distribution of gallium element, thus improve the conversion efficiency of CIGS solar cell.
For achieving the above object, the invention provides a kind of new method preparing CIGS absorbed layer, specifically,
The technical scheme that the present invention provides is as follows:
The preparation method of a kind of CIGS solar cell absorbed layer, comprises the following steps:
Step one, prepares one layer of In-Se compound layer in substrate；
Step 2, prepares Cu-In-Ga layer on In-Se compound layer, and obtaining preformed layer is
The double-deck preformed layer of In-Se/Cu-In-Ga；
Step 3, carries out selenizing heat treatment by bilayer preformed layer, obtains CuInGaSe absorbed layer.
Preferably, in step one, In-Se compound layer can use sputtering, evaporation, electro-deposition or selenizing heat
Process the methods such as indium thin film to prepare.
Preferably, in step one, In-Se compound layer thickness is 50-200nm, and meets atomic ratio
In/Se=1.1-2.0.
Preferably, in step 2, Cu-In-Ga layer utilizes magnetically controlled sputter method to prepare, can use Cu-Ga, Cu-In,
Cu-In-Ga alloys target and In target are target, and sputtering atmosphere is argon, and air pressure is 0.3-1.0Pa.
Preferably, double-deck preformed layer gross thickness is 300-1000nm, and overall atomic composition ratios meets
Cu/ (In+Ga)=0.70-0.99.
Preferably, the selenizing heat treatment that in step 3, double-deck preformed layer is carried out is included in the atmosphere with the presence of selenium source
Under selenylation reaction, and the annealing under inert gas shielding.
Further, selenium source includes selenium powder, selenium steam, Selenium hydride. or organic selenium compound.
Preferably, in substrate, sputtering has one layer of molybdenum film as back electrode.
Preferably, substrate includes soda-lime glass, low Fe glass, solar energy float glass, stainless steel foil, Al
Paper tinsel, Mo paper tinsel, Cu paper tinsel, polyimides (PI) or pet resin (PET).
The preparation method of the CIGS solar cell absorbed layer that the present invention provides proposes In-Se/Cu-In-Ga
The technical scheme of double-deck preformed layer, In-Se is after molybdenum surface is formed, and In is difficult at follow-up selenizing heat
Reason moves to surface, therefore the In content at back surface, carrying of In content can be increased in CIGS absorbed layer
The high crystallite dimension that can be effectively improved absorbed layer back.Meanwhile, In-Se phase there will be more than 550 DEG C
Liquid phase, can promote the diffusion of grain growth and gallium element further, thus improve the crystallization of CIGS absorbed layer
Property and the distribution of gallium element.Therefore, use the preformed layer of this bilayer, opening of CIGS solar cell can be improved
Road voltage, fill factor, curve factor and transformation efficiency.
Below with reference to accompanying drawing, the method for the present invention and the technique effect of generation are described further, with fully
Solve the purpose of the present invention, feature and effect.
Accompanying drawing explanation
Fig. 1 is the structural representation of CIGS solar cell
Fig. 2 is the process chart preparing CuInGaSe absorbed layer of the embodiment of the present invention 1
Detailed description of the invention
Fig. 1 show the general structure of CIGS solar cell, including the substrate 1 being arranged in order, molybdenum film 2, CIGS
Absorbed layer 3, transition zone 4, Window layer 5, antireflective coating 6 and gate-shaped electrode 7.
Substrate can be soda-lime glass, low Fe glass, solar energy float glass, stainless steel foil, Al paper tinsel, Mo
Paper tinsel, Cu paper tinsel, polyimides (PI), pet resin (PET) and other be suitable for
Substrate.For follow-up CIGS battery process, on base material, sputtering has one layer of molybdenum film as back of the body electricity
Pole material.
The preparation side of the CIGS solar cell absorbed layer that the present invention proposes is explained below by specific embodiment
Method.
Embodiment 1
Technological process is as shown in Figure 2:
Step one, by one layer of indium selenium (In-Se) of magnetron sputtering in the soda-lime glass substrate 1 that molybdenum film 2 covers
Compound layer 9, in target, In/Se atomic ratio is 1.3, and sputtering atmosphere is argon, and air pressure is 0.3-1.0Pa,
The thickness of In-Se layer is about 100nm.
Step 2, on In-Se layer, with Cu-Ga alloys target (Ga content at.25%) and In target as target,
The mode using magnetron sputtering sputters copper and indium gallium (Cu-In-Ga) layer 10, and sputtering atmosphere is argon, and air pressure is
0.3-1.0Pa, thickness is 0.6 μm, obtains double-deck preformed layer thin film, overall atomic composition ratios
Cu/ (In+Ga)=0.91.
Step 3, proceeds in selenizing stove by the thin film of the double-deck preformed layer of preparation, uses H2Se as selenium source, 400
DEG C selenizing 40min, anneal in 580 DEG C of nitrogen atmospheres 30min, then natural cooling, obtain CIGS absorbed layer 3,
Thickness is about 1.5 μm.
Embodiment 2
Step one, by one layer of In layer of magnetron sputtering in the soda-lime glass substrate 1 that molybdenum film 2 covers, sputtering
Atmosphere is argon, and air pressure is that the thickness of 0.3-1.0Pa, In layer is about 60nm.
Step 2, has the substrate of In layer to proceed in selenizing stove by sputtering, uses H2Se as selenium source, 190 DEG C of selenium
Change 15min, then naturally cool to room temperature, obtain In-Se compound layer 9.After selenizing, In-Se layer thickness is about
100nm, In/Se atomic ratio is 1.36.
Step 3, has the substrate of In-Se layer to be transferred in sputtering equipment, on In-Se layer, with Cu-Ga by preparation
Alloys target (Ga content at.25%) and In target are target, use the mode of magnetron sputtering to sputter copper and indium gallium layer 10,
Sputtering atmosphere is argon, and air pressure is 0.3-1.0Pa, and thickness is about 0.6 μm, obtains double-deck preformed layer thin film.
The atomic composition ratios of double-deck preformed layer entirety is Cu/ (In+Ga)=0.85.
Step 4, proceeds in selenizing stove by the thin film of the double-deck preformed layer of preparation, uses H2Se as selenium source, 400
DEG C selenizing 30min, anneal in 580 DEG C of nitrogen atmospheres 30min, then natural cooling, obtain CIGS absorbed layer 3,
Thickness is about 1.4 μm.
In other embodiments, In-Se compound can use sputtering, evaporation, electro-deposition and indium selenide thin film etc.
Prepared by various methods, it is only necessary to ensure that In-Se layer Atom than the thickness of In/Se=1.1-2.0, In-Se layer is
50-200nm, and do not introduce other objectionable impurities.
Preformed layer needs to ensure that gross thickness is 300-1000nm, and overall atomic composition ratios is
Cu/ (In+Ga)=0.70-0.99.
Selenizing heat treatment can use selenium powder, selenium steam, Selenium hydride., organic selenium compound (such as diethyl selenide (C4H10Se)、
Dimethyl-selenide (C2H6Se), dimethyl selenide (C2H6) etc. Se) as selenium source.Selenization process process (as selenizing temperature,
Time, the heating, cooling time etc.) need to make adjustment with the change of selenium source, preformed layer thickness and component.
The preferred embodiment of the present invention described in detail above.Should be appreciated that the ordinary skill of this area without
Creative work just can make many modifications and variations according to the design of the present invention.Therefore, all in the art
Technical staff passes through logical analysis, reasoning, or a limited experiment the most on the basis of existing technology
Available technical scheme, all should be in the protection domain being defined in the patent claims.
Claims (10)
1. the preparation method of a CIGS solar cell absorbed layer, it is characterised in that comprise the following steps:
Step one, prepares one layer of In-Se compound layer in substrate；
Step 2, prepares Cu-In-Ga layer on described In-Se compound layer, and obtaining preformed layer is
The double-deck preformed layer of In-Se/Cu-In-Ga；
Step 3, carries out selenizing heat treatment by described double-deck preformed layer, obtains CuInGaSe absorbed layer.
2. the preparation method of CIGS solar cell absorbed layer as claimed in claim 1, wherein described in step one
In-Se compound layer can use the methods such as sputtering, evaporation, electro-deposition or selenizing heat treatment indium thin film to prepare.
3. the preparation method of CIGS solar cell absorbed layer as claimed in claim 1, wherein described in step one
In-Se compound layer thickness is 50-200nm, and meets atomic ratio In/Se=1.1-2.0.
4. the preparation method of CIGS solar cell absorbed layer as claimed in claim 1, wherein described in step 2
Cu-In-Ga layer utilizes magnetically controlled sputter method to prepare, and can use Cu-Ga, Cu-In, Cu-In-Ga alloys target
Being target with In target, sputtering atmosphere is argon, and air pressure is 0.3-1.0Pa.
5. the preparation method of CIGS solar cell absorbed layer as claimed in claim 1, wherein said bilayer is prefabricated
Layer gross thickness is 300-1000nm, and overall atomic composition ratios meets Cu/ (In+Ga)=0.70-0.99.
6. the preparation method of CIGS solar cell absorbed layer as claimed in claim 1, wherein described in step 3
Double-deck preformed layer carries out selenizing heat treatment and is included in the presence of the selenylation reaction under the atmosphere of selenium source, and indifferent gas
Annealing under body protection.
7. the preparation method of CIGS solar cell absorbed layer as claimed in claim 6, wherein said selenium source includes
Selenium powder, selenium steam, Selenium hydride. or organic selenium compound.
8. the preparation method of CIGS solar cell absorbed layer as claimed in claim 6, wherein said annealing
For anneal in 580 DEG C of nitrogen atmospheres 30min, then natural cooling.
9. the preparation method of CIGS solar cell absorbed layer as claimed in claim 1, wherein said substrate is spattered
Penetrate one layer of molybdenum film as back electrode.
10. the preparation method of CIGS solar cell absorbed layer as claimed in claim 1, wherein said substrate bag
Include soda-lime glass, low Fe glass, solar energy float glass, stainless steel foil, Al paper tinsel, Mo paper tinsel, Cu paper tinsel,
Polyimides or pet resin.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107731942A (en) * | 2017-09-19 | 2018-02-23 | 荆门市格林美新材料有限公司 | A kind of copper indium gallium selenium solar cell of inverted structure and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130029452A1 (en) * | 2011-07-26 | 2013-01-31 | Yi-Jiunn Chien | Method of forming optoelectronic conversion layer |
| CN103378215A (en) * | 2012-04-13 | 2013-10-30 | 台积太阳能股份有限公司 | CIGS solar cell structure and method for fabricating the same |
| CN105070784A (en) * | 2015-07-17 | 2015-11-18 | 邓杨 | New, cheap and efficient CIGS cell absorbent layer preparation process |
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| US20130029452A1 (en) * | 2011-07-26 | 2013-01-31 | Yi-Jiunn Chien | Method of forming optoelectronic conversion layer |
| CN103378215A (en) * | 2012-04-13 | 2013-10-30 | 台积太阳能股份有限公司 | CIGS solar cell structure and method for fabricating the same |
| CN105070784A (en) * | 2015-07-17 | 2015-11-18 | 邓杨 | New, cheap and efficient CIGS cell absorbent layer preparation process |
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| CN107731942A (en) * | 2017-09-19 | 2018-02-23 | 荆门市格林美新材料有限公司 | A kind of copper indium gallium selenium solar cell of inverted structure and preparation method thereof |
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