CN105975687B - Lumped model construction method of the band logical co-planar waveguide micro-strip without through-hole transition structure - Google Patents
Lumped model construction method of the band logical co-planar waveguide micro-strip without through-hole transition structure Download PDFInfo
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Abstract
The invention discloses a kind of construction method of the band logical co-planar waveguide micro-strip without through-hole transition structure lumped model, mainly solving existing co-planar waveguide microstrip transition structure lumped model can not broadband, band logical and low-frequency cut-off characteristic and parameter extraction and the problem that optimizes lengthy and tedious time-consuming of the accurate simulation without through-hole transition structure.Its technical solution is: 1. construct equivalent circuit according to the physical features of transition structure；2. emulating to obtain scattering parameter S1 of the band logical co-planar waveguide micro-strip used without through-hole transition structure by 3 D electromagnetic；3. extracting the initial value of the capacitor in equivalent circuit, resistance and inductance element according to scattering parameter S1；4. pair initial value carries out simulation optimization, the end value of each element of equivalent circuit is obtained.Energy accurate simulation of the present invention goes out bandpass characteristics, broadband character and low-frequency cut-off characteristic of the band logical co-planar waveguide micro-strip without through-hole transition structure, and proposes ginseng and optimization process is simple, can be used for monolithic, hybrid microwave integrated circuit design and On-wafer measurement.
Description
Technical field
The invention belongs to microelectronics technologies, and in particular to it is micro- to can be used for monolithic for a kind of construction method of lumped model
Wave IC design, hybrid microwave integrated circuit design and On-wafer measurement.
Technical background
In recent decades, with the fast development of microwave, millimeter-wave technology, wireless mobile telecommunication technology and microwave are integrated
Circuit engineering is rapidly developed and is promoted and applied.Since microstrip line, co-planar waveguide, the line of rabbet joint and coplanar stripline etc. transmit knot
Structure is all planar structure, they the characteristics of be exactly size Control in a plane, thus design, in process it is more square
Just.Wherein, microstrip line and co-planar waveguide both transmission lines are the mostly important structures for forming microwave integrated circuit.
Microstrip line is a kind of planar transmission line the most popular, and microstrip transmission line is applied to low level frequency microwave technology
In.Its advantages be that manufacturing expense is low, size is especially small, weight is particularly lightweight, working band is wide and with solid state device
Good fit property；Its major defect is that loss is larger, cannot be used in the case where high level.Since microstrip line construction is simple,
Convenient for the debugging of the integrated and circuit of device, so that microstrip line has become radio frequency, circuit structure preferred in microwave circuit.
The basic structure of co-planar waveguide is made of the big ground level of the semo-infinite of a center conduction band and both sides, and center is led
Band is used as signal transmssion line, and two side band lines are as ground line.Co-planar waveguide supports Quasi-TEM mode to propagate, with traditional microstrip line
Compare, have it is easy to process, be easy in parallel and serial various microwave devices, do not need package and through-hole, radiation loss are small etc. excellent
Point.His characteristic impedance is only determined by conduction band width and groove width, therefore size can be with very little, but loss can increase therewith.With
, simultaneously as there is ground between two adjacent lines, interfering with each other between them is fainter for this, so what co-planar waveguide was constituted
Circuit can more crypto set, the application of particularly suitable microwave integrated circuit and monolithic integrated microwave circuit than microstrip circuitry.Altogether
The quasi- TEM mold that surface wave is led has the advantages that frequency dispersion is weak, this provides possibility for design wideband circuit and device.
In many devices on a printed circuit, there are many microstrip transmission lines and co-planar waveguide of type, between them
Connection can generate discontinuity, such as the air gap, bending and step, and this discontinuity is transmitted to signal and reflection has strongly
Influence, in some cases, the uneven distribution of magnetic field caused by accumulation and electric field make transmission line generate induction reactance or
The effect of person's capacitive reactance.The input/output port of present microwave experiment equipment is mostly coplanar waveguide form, in microwave electromagnetic characteristics
In be frequently necessary to carry out the conversions of both transmission line forms can in order to reduce transmission loss brought by this discontinuity
Coffret structure is added, this conversion is completed by co-planar waveguide microstrip transition structure,
During circuit design and On-wafer measurement, the RLC lumped model of accurate co-planar waveguide microstrip transitions circuit
The actual performance of transformational structure not only can be accurately emulated, but also can be convenient under conditions of not needing large amount of complex and calculating
De- embedding process is completed on ground, obtains the actual performance of main body circuit or actual measurement device.But existing co-planar waveguide is micro-
RLC lumped model with transition structure is mainly for the transformational structure for having through-hole structure, and mainly for narrow-band low pass transition
Structure is modeled, and accuracy is not high, and it is indefinite to propose ginseng process.Therefore for accurate broadband band logical RLC lumped model
It is explored there is still a need for a large amount of.
Summary of the invention
It is an object of the invention to propose a kind of building of the band logical co-planar waveguide micro-strip without through-hole transition structure lumped model
Method is realized with solving the deficiency of above-mentioned existing co-planar waveguide microstrip transition structure RLC lumped model to co-planar waveguide micro-strip mistake
Cross the accurate simulation of structure broadband and bandpass characteristics.
To achieve the above object, technical scheme is as follows:
(1) equivalent circuit is constructed according to the physical features of transition structure:
The center signal line of coplanar waveguide structure 1a) is equivalent to input inductance L1, by mistake between co-planar waveguide and micro-strip
The frequency selection effect for crossing section is equivalent to transition capacitance C1, the loss effect of changeover portion is equivalent to transition resistance R1, by micro-strip
Part is equivalent to outputting inductance L2, and input inductance L1, transition capacitance C1, transition resistance R1 and outputting inductance L2 are sequentially connected in series
Connection forms main line；
The capacity effect between co-planar waveguide center signal line and ground wire 1b) is equivalent to ground capacity C2, by coplanar wave
Loss effect between guiding center signal wire and ground wire is equivalent to ground resistance R2；One end of ground resistance R2 passes through ground capacity
C2 ground connection, the other end are connected to the junction of input inductance L1 and transition capacitance C1；
(2) it emulates to obtain band logical co-planar waveguide micro-strip used dissipating without through-hole transition structure by 3 D electromagnetic simulation software
Penetrate parameter S1；
(3) according to the initial value of capacitor, resistance and inductance element in scattering parameter S1 extraction equivalent circuit, it may be assumed that input
The initial value of inductance L1 is h1, the initial value of transition capacitance C1 is q1, the initial value of transition resistance R1 is w1, outputting inductance L2
The initial value w2 of initial value h2, the initial value q2 of ground capacity C2 and ground resistance R2；
(4) initial value of each element carries out simulation optimization in the equivalent circuit obtained to (3), until equivalent circuit emulation
Scattering parameter S2 is consistent with the scattering parameter S1 that 3 D electromagnetic emulates, and obtains the end value of each element of equivalent circuit, it may be assumed that input electricity
Feel the end value of the end value H1 of L1, the end value Q1 of transition capacitance C1, the end value W1 of transition resistance R1, outputting inductance L2
The end value W2 of H2, the end value Q2 of ground capacity C2 and ground resistance R2, these final arguments are for the integrated electricity of monolithic microwave
The De- embedding on road, hybrid microwave integrated circuit design and On-wafer measurement calculates.
The beneficial effects of the present invention are:
1) by introducing changeover portion capacitor C1, the low-frequency cut-off characteristic of practical transformational structure can be simulated, can accurately be imitated
The bandpass characteristics of true transformational structure；
2) by introducing high pass and low pass circuit simultaneously in a model, the wideband of true transformational structure can accurately be simulated
Band characteristic；
3) it since each lamped element has actual physical significance, is determined in equivalent circuit by the strict derivation of equation
The initial value of each element simplifies the derivation of formula, saves parameter using simplified equivalent impedance circuit in derivation process
The time of extraction has obtained the end value of element by simple optimization process, by the simulation value and actual measurement of equivalent circuit
Value fitting well.
Detailed description of the invention
Fig. 1 is implementation flow chart of the invention；
Fig. 2 is present invention modeling band logical co-planar waveguide micro-strip used without through-hole transition structure figure；
Fig. 3 is equivalent circuit diagram of the present invention to Fig. 2 building；
Fig. 4 is that the present invention extracts the simplification equivalent impedance circuit diagram used when Fig. 3 initial value；
Fig. 5 is the test curve comparison diagram of the simulation curve and Fig. 2 transition structure after the optimization of Fig. 3 equivalent circuit.
Specific embodiment
The principle and features of the present invention will be described below with reference to the accompanying drawings, and the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the invention.
Referring to Fig.1, steps are as follows for realization of the invention:
Step 1, equivalent circuit is constructed according to the physical features of transition structure.
As shown in Fig. 2, band logical co-planar waveguide micro-strip used in this example is without through-hole transition structure, by co-planar waveguide, transition
Section and microstrip line three parts composition.Wherein:
Co-planar waveguide, including center signal line and ground wire；
Changeover portion, including co-planar waveguide changeover portion and microstrip transition section two parts；
Co-planar waveguide changeover portion, the ground wire of center signal line and width gradual change including width gradual change；
Co-planar waveguide and co-planar waveguide changeover portion by the series connection of respective center signal line, microstrip transition section with it is coplanar
The center signal line of waveguide transition section is connected in series, and microstrip transition section and microstrip line are connected in series by transition line.
Above section is produced on the front of aluminium nitride substrate, and the back side is covered by metal layer.
The building for carrying out equivalent circuit without through-hole transition structure to above-mentioned band logical co-planar waveguide micro-strip carries out as follows:
1.1) the center signal line of coplanar waveguide structure is equivalent to input inductance L1, by mistake between co-planar waveguide and micro-strip
The frequency selection effect for crossing section is equivalent to transition capacitance C1, the loss effect of changeover portion is equivalent to transition resistance R1, by micro-strip
Part is equivalent to outputting inductance L2, and input inductance L1, transition capacitance C1, transition resistance R1 and outputting inductance L2 are sequentially connected in series
Connection forms main line；
1.2) capacity effect between co-planar waveguide center signal line and ground wire is equivalent to ground capacity C2, by coplanar wave
Loss effect between guiding center signal wire and ground wire is equivalent to ground resistance R2；One end of ground resistance R2 passes through ground capacity
C2 ground connection, the other end are connected to the junction of input inductance L1 and transition capacitance C1, as shown in Figure 3.
Step 2. obtains scattering parameter S1 of the band logical co-planar waveguide micro-strip used without through-hole transition structure.
There are two types of methods for the acquisition of scattering parameter S1, the first is three to transition structure by 3 D electromagnetic simulation software
Dimension module carries out Electromagnetic Simulation, obtains transition structure scattering parameter S1, the advantages of this method is that of avoiding production real structure
Trouble, and have good accuracy；Second method is to produce the transition structure for needing to model, to the transition structure
It is tested, directly obtains its scattering parameter S1.This example uses first method, i.e., is emulated by 3 D electromagnetic simulation software
Obtain scattering parameter S1 of the band logical co-planar waveguide micro-strip used without through-hole transition structure:
Wherein, S111For the input port voltage reflection coefficient of transition structure, S121Increase for the forward voltage of transition structure
Benefit, S112For the backward voltage gain of transition structure, S122For the output port voltage reflection coefficient of transition structure.
Step 3, according to the initial value of capacitor, resistance and inductance element in scattering parameter S1 extraction equivalent circuit.
(3.1) the scattering parameter S1 emulated with 3 D electromagnetic simulation software is converted into transfer matrix T:
Wherein, input and output voltage ratio when A is output open circuit, B are the transfger impedance when output short-circuit, and C is when defeated
Transfer admittance when opening a way out, D are the input and output electric current ratio when output short-circuit, Z0For the characteristic impedance of system；
Following equation is obtained according to the relationship between matrix items:
(3.2) equivalent circuit being made of in step 1 lamped element is simplified again, is reduced to be hindered by input
Anti- Z1, output impedance Z2With earth impedance Z3The equivalent circuit of these three impedances composition, wherein input impedance Z1With output impedance Z2
It is connected in series, earth impedance Z3One end and input impedance Z1With output impedance Z2Junction it is in parallel, earth impedance Z3It is another
End ground connection, as shown in Figure 4；
(3.3) by transfer matrix T input impedance Z1, output impedance Z2With earth impedance Z3Three impedances are expressed as:
Following equation is obtained according to corresponding relationship every in formula<2>matrix:
According to formula<3>, by input impedance Z1, output impedance Z2With earth impedance Z3These three impedances are expressed as transfer matrix T
Function, it may be assumed that
Wushu<1>brings formula<4>into, finds out input impedance Z1, output impedance Z2With earth impedance Z3Three impedances it is specific
Value；
(3.4) functional relation between impedance and initial value is established:
By input impedance Z1It is expressed as the function of the initial value h1 of input inductance L1,
By output impedance Z2It is expressed as the initial value h2 of outputting inductance L2, the initial value q1 of transition capacitance C1 and transition resistance
The function of the initial value w1 of R1,
By earth impedance Z3It is expressed as the function of the initial value w2 of the initial value q2 and ground resistance R2 of ground capacity C2,
That is:
Wherein ω is angular frequency；
(3.5) initial value of each element in equivalent circuit is calculated using formula<5>:
(3.5a) is to input impedance Z in formula<5>1Take imaginary part: Im (Z1Then)=ω h1 draws the curve about ω, calculate
Slope of a curve obtains the value of h1, and wherein Im is to take imaginary part,
(3.5b) is to output impedance Z in formula<5>2Take real part: Re (Z2)=w1 obtains the value of w1, wherein Re is to take real part；
(3.5c) is by output impedance Z in formula<5>2Multiplied by ω, then take imaginary part:Draw about
ω2Curve, the slope of calculated curve obtains the value of h2, and the intercept of calculated curve obtains the value of q1；
(3.5d) is to earth impedance Z in formula<5>3Take real part: Re (Z3)=w2 obtains the value of w2；
(3.5e) is to earth impedance Z in formula<5>3Multiplied by ω, imaginary part is taken:Obtain the value of q2.
Step 4. carries out simulation optimization to the initial value of element each in equivalent circuit, obtains the final of each element of equivalent circuit
Value.
(4.1) to being determined that the equivalent circuit of initial value emulates, the scattering parameter S2 emulated:
Wherein, S211For the input port voltage reflection coefficient of equivalent circuit emulation, S221For the forward direction of equivalent circuit emulation
Voltage gain, S212For the backward voltage gain of equivalent circuit emulation, S222For the output port voltage reflection of equivalent circuit emulation
Coefficient；
(4.2) error function of input port voltage reflection coefficient is defined as error (S11), by forward voltage gain
Error function is defined as error (S21), the error function of backward voltage gain is defined as error (S12), by output port electricity
The error function of pressure reflection coefficient is defined as error (S22) it is defined respectively as:
error(S11)=| S211-S111|/|S111|
error(S21)=| S221-S121|/|S121|
error(S12)=| S212-S112|/|S112|
error(S22)=| S222-S122|/|S122|；
(4.3) using the random optimization program in computer aided design software ADS to the initial value of above-mentioned equivalent circuit
Iterative calculation 100 times, the parameter tentatively optimized；
(4.4) parameter tentatively optimized is carried out using gradients optimization routine in computer aided design software ADS again
Iterative calculation, as error (S11)、error(S12)、error(S21)、error(S22) when being respectively less than 0.5, optimization terminates, and obtains
Input the end value H1 of inductance L1, the end value Q1 of transition capacitance C1, transition resistance R1 end value W1, outputting inductance L2 most
The end value W2 of final value H2, the end value Q2 of ground capacity C2 and ground resistance R2.
Effect of the invention can be further illustrated by following emulation and test result:
Emulation and test 1, carry out the band logical co-planar waveguide micro-strip in Fig. 2 without through-hole transition structure etc. with the method for the present invention
It imitates the building of circuit, the extraction of each element initial value and the optimization of initial value in equivalent circuit, finally obtains each in equivalent circuit
The end value of a element, as shown in table 1.
The parameter value of each element in 1 equivalent circuit of table
| Element | Numerical value | Element | Numerical value |
| L1 | 219.64pH | C2 | 33.34fF |
| L2 | 15pH | R1 | 1.07Ω |
| C1 | 514.9fF | R2 | 4.47Ω |
Emulation and test 2, actual measured results and simulation result are compared.
For the accuracy of each component value extracted in proof list 1, observe equivalent-circuit model simulation value and practical mistake
The fitting degree between the test value of structure is crossed, the transition structure in Fig. 2 is tested, and the simulation result with equivalent circuit
It compares.
For the ease of implementing On-wafer measurement, two transition structure differential concatenations in Fig. 2 are tested, testability at this time
It can be the superposition of transition structure performance in two Fig. 2, while structure is formed to two transition structure differential concatenations and carries out equivalent electricity
The foundation of road model, and emulated, actual measured results and simulation result are compared, as a result such as Fig. 5.
Insertion loss S (2,1) curve, reflection loss curve S (1,1) and the emulation for showing that test obtains in Fig. 5 obtain
Insertion loss curve (2,1) curve, reflection loss curve S (1,1), from figure 5 it can be seen that the equivalent-circuit model can
Simulate the bandpass characteristics of transformational structure in the frequency range of 5~50GHz, be capable of Accurate Curve-fitting transition structure insertion loss and
Reflection loss.Simulation curve can simulate the broadband character, bandpass characteristics and low-frequency cut-off characteristic of real devices, illustrate to introduce
Capacitor C1 can efficiently solve current lumped model can not accurate simulation broadband character, bandpass characteristics and low-frequency cut-off characteristic
Disadvantage.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to restrict the invention, it is all in spirit of the invention and
Within principle, made any modification, same replacement, improvement etc. be should all be included in the protection scope of the present invention.
Claims (2)
1. a kind of construction method of the band logical co-planar waveguide micro-strip without through-hole transition structure lumped model, comprising:
(1) equivalent circuit is constructed according to the physical features of transition structure:
The center signal line of coplanar waveguide structure 1a) is equivalent to input inductance L1, by changeover portion between co-planar waveguide and micro-strip
Frequency selection effect be equivalent to transition capacitance C1, the loss effect of changeover portion is equivalent to transition resistance R1, by micro-strip part
It is equivalent to outputting inductance L2, and input inductance L1, transition capacitance C1, transition resistance R1 and outputting inductance L2 are sequentially connected in series company
It connects, forms main line；
The capacity effect between co-planar waveguide center signal line and ground wire 1b) is equivalent to ground capacity C2, it will be in co-planar waveguide
Loss effect between heart signal wire and ground wire is equivalent to ground resistance R2；One end of ground resistance R2 is connect by ground capacity C2
Ground, the other end are connected to the junction of input inductance L1 and transition capacitance C1；
(2) it emulates to obtain band logical co-planar waveguide micro-strip used by 3 D electromagnetic simulation software to join without the scattering of through-hole transition structure
Number S1；
(3) according to the initial value of capacitor, resistance and inductance element in scattering parameter S1 extraction equivalent circuit:
(3.1) the scattering parameter S1 emulated with 3 D electromagnetic simulation software is converted into transfer matrix T:
Wherein, input and output voltage ratio when A is output open circuit, B are the transfger impedance when output short-circuit, and C is when output is opened
Transfer admittance when road, D are the input and output electric current ratio when output short-circuit, Z0For the characteristic impedance of system；
It is obtained according to the relationship between matrix items:
(3.2) equivalent circuit being made of in (1) lamped element is simplified again, is equivalent to by input impedance Z1, output impedance Z2
With earth impedance Z3The equivalent circuit of three impedances composition, wherein input impedance Z1With output impedance Z2It is connected in series, earth impedance
Z3One end and input impedance Z1With output impedance Z2Junction it is in parallel, earth impedance Z3The other end ground connection；
(3.3) by transfer matrix T input impedance Z1, output impedance Z2With earth impedance Z3Three impedances are expressed as:
It is obtained according to corresponding relationship every in matrix:
According to formula<3>, by input impedance Z1, output impedance Z2With earth impedance Z3These three impedances are expressed as the letter of transfer matrix T
Number, it may be assumed that
Wushu<1>brings formula<4>into, finds out input impedance Z1, output impedance Z2With earth impedance Z3The occurrence of three impedances；
(3.4) functional relation between impedance and initial value is established:
By input impedance Z1It is expressed as the function of the initial value h1 of input inductance L1；
By output impedance Z2It is expressed as the initial value h2 of outputting inductance L2, the initial value q1 of transition capacitance C1 and transition resistance R1
The function of initial value w1；
By earth impedance Z3It is expressed as the function of the initial value w2 of the initial value q2 and ground resistance R2 of ground capacity C2, it may be assumed that
Wherein ω is angular frequency；
(3.5) initial value of each element in equivalent circuit is calculated using formula<5>:
(3.5a) is to input impedance Z in formula<5>1Take imaginary part: Im (Z1)=ω h1, then draws the curve about ω, calculated curve
Slope, obtain the value of h1, wherein Im be take imaginary part；
(3.5b) is to output impedance Z in formula<5>2Take real part: Re (Z2)=w1 obtains the value of w1, wherein Re is to take real part；
(3.5c) is by output impedance Z in formula<5>2Multiplied by ω, then take imaginary part:It draws about ω2Song
Line, the slope of calculated curve obtain the value of h2, and the intercept of calculated curve obtains the value of q1；
(3.5d) is to earth impedance Z in formula<5>3Take real part: Re (Z3)=w2 obtains the value of w2；
(3.5e) is to earth impedance Z in formula<5>3Multiplied by ω, imaginary part is taken:Obtain the value of q2；
(4) initial value of each element carries out simulation optimization in the equivalent circuit obtained to (3), until the scattering of equivalent circuit emulation
Parameter S2 is consistent with the scattering parameter S1 that 3 D electromagnetic emulates, and obtains the end value of each element of equivalent circuit:
(4.1) to being determined that the equivalent circuit of initial value emulates, the scattering parameter S2 emulated:
Wherein, S211For the input port voltage reflection coefficient of equivalent circuit emulation, S221For the forward voltage of equivalent circuit emulation
Gain, S212For the backward voltage gain of equivalent circuit emulation, S222For the output port voltage reflection system of equivalent circuit emulation
Number；
(4.2) error function of input port voltage reflection coefficient is defined as error (S11), by the error of forward voltage gain
Function is defined as error (S21), the error function of backward voltage gain is defined as error (S12), output port voltage is anti-
The error function for penetrating coefficient is defined as error (S22) it is defined respectively as:
error(S11)=| S211-S111|/|S111|
error(S21)=| S221-S121|/|S121|
error(S12)=| S212-S112|/|S112|
error(S22)=| S222-S122|/|S122|；
(4.3) using the random optimization program in computer aided design software ADS to the initial value iteration of above-mentioned equivalent circuit
It calculates 100 times, the parameter tentatively optimized；
(4.4) parameter tentatively optimized is iterated using gradients optimization routine in computer aided design software ADS again
It calculates, as error (S11)、error(S12)、error(S21)、error(S22) when being respectively less than 0.5, optimization terminates, and is inputted
The end value of the end value H1 of inductance L1, the end value Q1 of transition capacitance C1, the end value W1 of transition resistance R1, outputting inductance L2
The end value W2 of H2, the end value Q2 of ground capacity C2 and ground resistance R2.
2. according to the method described in claim 1, it is characterized by: being emulated in step (2) by 3 D electromagnetic simulation software
Scattering parameter S1 to band logical co-planar waveguide micro-strip used without through-hole transition structure, is expressed as follows:
Wherein, S111For the input port voltage reflection coefficient of transition structure, S121For the forward voltage gain of transition structure, S112
For the backward voltage gain of transition structure, S122For the output port voltage reflection coefficient of transition structure.
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| CN108959728B (en) * | 2018-06-12 | 2023-04-07 | 杭州法动科技有限公司 | Radio frequency device parameter optimization method based on deep learning |
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