CN105970158A - Evaporation technology of metalized safety thin film of capacitor - Google Patents
Evaporation technology of metalized safety thin film of capacitor Download PDFInfo
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- CN105970158A CN105970158A CN201610476622.0A CN201610476622A CN105970158A CN 105970158 A CN105970158 A CN 105970158A CN 201610476622 A CN201610476622 A CN 201610476622A CN 105970158 A CN105970158 A CN 105970158A
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- metal
- coat
- film substrate
- intermediate film
- evaporation
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- 239000010409 thin film Substances 0.000 title claims abstract description 51
- 238000001704 evaporation Methods 0.000 title claims abstract description 32
- 230000008020 evaporation Effects 0.000 title claims abstract description 32
- 239000003990 capacitor Substances 0.000 title claims abstract description 30
- 238000005516 engineering process Methods 0.000 title abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 78
- 239000002184 metal Substances 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000011248 coating agent Substances 0.000 claims abstract description 37
- 238000000576 coating method Methods 0.000 claims abstract description 37
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 35
- 239000011701 zinc Substances 0.000 claims abstract description 35
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 33
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000000203 mixture Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 13
- 229920000098 polyolefin Polymers 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 122
- 238000001883 metal evaporation Methods 0.000 claims description 24
- 239000003989 dielectric material Substances 0.000 claims description 23
- 238000007740 vapor deposition Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 238000007738 vacuum evaporation Methods 0.000 claims description 18
- 239000004411 aluminium Substances 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011104 metalized film Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- HUIAGCXKFBECLZ-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[AlH3].[Zn] HUIAGCXKFBECLZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002075 main ingredient Substances 0.000 description 2
- 239000002120 nanofilm Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention discloses an evaporation technology of a metalized safety thin film of a capacitor. The evaporation technology comprises the following steps that a first metal coating is evaporated on one face of a middle thin film substrate; the first metal coating is covered with a layer of first thin film medium; the middle thin film substrate and the first thin film medium are closely attached; a second metal coating is evaporated on the other face of the middle thin film substrate; the second metal coating is covered with a layer of second thin film medium; the middle thin film substrate and the second thin film medium are closely attached; each of the first metal coating and the second metal coating is aluminum or zinc or a mixture of aluminum and zinc; and the middle thin film substrate, the first thin film medium and the second thin film medium are each made of a polyolefin material. According to the evaporation technology of the metalized safety thin film of the capacitor, the requirement of the metalized thin film of the capacitor for the preparing technology can be reduced, and the actual use requirement can be met.
Description
Technical field
The present invention relates to a kind of capacitor metalized safe film vapor deposition technique, belong to thin-film capacitor article manufacturing technology field.
Background technology
Capacitor film of the prior art is mostly composite zinc-aluminum metallized film, specifically three layers of composite plating layer structure of " aluminum-zinc-aluminum "；This is owing to aluminium metal coating has preferable adhesion property relative to high molecular film material, and production process is easily handled, but aluminium metal coating is oxidized easily in atmosphere and forms the compact oxidation layer with aluminium sesquioxide as Main Ingredients and Appearance, this compact oxidation layer can cause the capacity of capacitor to decline rapidly when working under the big electric current of ac high-voltage；And metallic zinc coating is poor relative to the adhesion property of high molecular film material, but outside aluminium metal coating, it is deposited with layer of metal zinc coating again can prevent internal layer aluminium coated from forming oxide layer well, from the situation without occurring the capacity of capacitor to decline rapidly；Outermost aluminium metal coating is then primarily used to form the compact oxidation layer generation with prevention oxidation further, thus protects metallic zinc coating and the aluminium metal coating of internal layer.
The capacitor metalized thin film of above-mentioned " aluminum-zinc-aluminum " three layers of composite plating layer structure requires higher in preparation technology, and production and processing difficulty is big and conforming product rate is low, and manufacturing and processing equipment input cost is high and maintenance difficulties is big.
Summary of the invention
The deficiency that the present invention exists for prior art just, it is provided that a kind of capacitor metalized safe film vapor deposition technique, it is possible to reduce the requirement in preparation technology of the capacitor metalized thin film, meet actual operation requirements.
For solving the problems referred to above, the technical solution used in the present invention is as follows:
A kind of capacitor metalized safe film vapor deposition technique, comprises the following steps:
Step one, at one side one layer of first coat of metal of evaporation of the intermediate film substrate with insulating property (properties), described first coat of metal is aluminum or zinc or the mixture of aluminum and zinc, and described intermediate film substrate is that polyolefine material is made；
Step 2, have in the one side of described first coat of metal at described intermediate film substrate evaporation and cover one layer of the first film medium with insulating property (properties), make described first coat of metal between described intermediate film substrate and described the first film medium, and described intermediate film substrate and described the first film medium-tight laminating, described the first film medium is that polyolefine material is made；
Step 3, being deposited with one layer of second coat of metal at the another side of described intermediate film substrate, described second coat of metal is aluminum or zinc or the mixture of aluminum and zinc；
Step 4, have in the one side of described second coat of metal at described intermediate film substrate evaporation and cover one layer of second thin film dielectrics with insulating property (properties), make described second coat of metal between described intermediate film substrate and described second thin film dielectrics, and described intermediate film substrate and described second thin film dielectrics fit tightly, described second thin film dielectrics is that polyolefine material is made.
Improvement as technique scheme, including metal metallized safety film vapor deposition equipment, described metal metallized safety film vapor deposition equipment includes intermediate film emptying roller, the first vacuum evaporation chamber, the first film emptying roller, the second vacuum evaporation chamber, the second thin film emptying roller and finished films material receiving roller；And comprise the following steps:
Step one, described intermediate film substrate unreel from described intermediate film emptying roller, subsequently into described first vacuum evaporation chamber, are deposited with described first coat of metal；
Step 2, described the first film medium unreel from described the first film emptying roller, are then covered by described first coat of metal and fit with described intermediate film substrate；
Step 3, described intermediate film substrate enter described second vacuum evaporation chamber, are deposited with described second coat of metal；
Step 4, described second thin film dielectrics unreel from described second thin film emptying roller, are then covered by described second coat of metal and fit with described intermediate film substrate.
It is the mixture of aluminum and zinc as the improvement of technique scheme, described first coat of metal and described second coat of metal, and the mass percent that zinc is in the mixture of aluminum and zinc is 17%～22%；Described first vacuum evaporation chamber and described second vacuum evaporation chamber all include that being deposited with chill roll, metallic aluminium evaporation boat and metallic zinc evaporation boat, described metallic aluminium evaporation boat and described metallic zinc evaporation boat is respectively positioned on the bottom of described evaporation chill roll.
Improvement as technique scheme, described intermediate film substrate includes the length direction that structure repeats to extend and the width being perpendicular to described length direction, the one side of described intermediate film substrate include the first metal evaporation district for being deposited with described first coat of metal and not evaporation metal coating first stay border area, the another side of described intermediate film substrate include the second metal evaporation district for being deposited with described second coat of metal and not evaporation metal coating second stay border area；Described first metal evaporation district and described second stays one end that border area is positioned on described intermediate film substrate width, described second metal evaporation district and described first to stay the other end that border area is positioned on described intermediate film substrate width.
Improvement as technique scheme, described first metal evaporation district includes the first curved edge staying side, border area towards the described first the first flattened edge staying side, border area and the most described first, and described second metal evaporation district includes the second curved edge staying side, border area towards the described second the second flattened edge staying side, border area and the most described second.
Improvement as technique scheme, the described first metal evaporation district coating square that all include several matrix arrangement identical with described second metal evaporation plot structure, it is provided with clearance for insulation between adjacent described coating square, and adjacent described coating square is connected with each other at turning；The limit being positioned at the described coating square at described first curved edge and described second curved edge is semicircular arc limit, and described coating square each is tangent with two end points on described semicircular arc limit for two straight lines connecting described semicircular arc limit.
Flush as the improvement of technique scheme, described the first film medium and described second thin film dielectrics all edges at two ends with described intermediate film substrate on the length direction of described intermediate film substrate；Described the first film medium and described second thin film dielectrics end margin on described intermediate film substrate width lay respectively at described first and stay border area and described second to stay border area, described the first film medium and the described second thin film dielectrics other end edge on described intermediate film substrate width to flush with two end points on described semicircular arc limit.
Compared with prior art, the implementation result of the present invention is as follows for the present invention:
A kind of capacitor metalized safe film vapor deposition technique of the present invention, by described first coat of metal of evaporation on described intermediate film substrate two sides and described second coat of metal, and by arranging described the first film medium and described second thin film dielectrics intercepts contacting of oxidizing gas and described first coat of metal and described second coat of metal, so that the coat of metal is difficult to oxidized in atmosphere, and relative to conventional capacitor metalized thin film, the consumption of dielectric substrate thin film merely add 50%, but significantly reduces the requirement of preparation technology.
Accompanying drawing explanation
Fig. 1 is the structural representation of metal metallized safety film vapor deposition equipment of the present invention；
Fig. 2 is product structure schematic diagram prepared by a kind of capacitor metalized safe film vapor deposition technique of the present invention；
Fig. 3 is intermediate film substrate of the present invention and the structural representation of first coat of metal.
Detailed description of the invention
Present disclosure is described below in conjunction with specific embodiments.
As it is shown in figure 1, the structural representation of equipment of a kind of capacitor metalized safe film vapor deposition technique provided for the present invention；
As shown in Figures 2 and 3, the structural representation of capacitor metalized safe thin film prepared by a kind of capacitor metalized safe film vapor deposition technique provided for the present invention.
A kind of capacitor metalized safe film vapor deposition technique that the present invention provides, including metal metallized safety film vapor deposition equipment, metal metallized safety film vapor deposition equipment includes intermediate film emptying roller the 61, first vacuum evaporation chamber 70, the first film emptying roller the 62, second vacuum evaporation chamber the 80, second thin film emptying roller 63 and finished films material receiving roller 64；And comprise the following steps:
Step one, intermediate film substrate 10 unreel from intermediate film emptying roller 61, subsequently into the first vacuum evaporation chamber 70, are deposited with first coat of metal 20；
Step 2, the first film medium 40 unreel from the first film emptying roller 62, are then covered by fitting on first coat of metal 20 and with intermediate film substrate 10；
Step 3, intermediate film substrate 10 enter the second vacuum evaporation chamber 80, are deposited with second coat of metal 30；
Step 4, the second thin film dielectrics 50 unreel from the second thin film emptying roller 63, are then covered by fitting on second coat of metal 30 and with intermediate film substrate 10；
Intermediate film substrate 10, the first film medium 40 and the second thin film dielectrics 50 are polyolefine material and make, and first coat of metal 20 and second coat of metal 30 are aluminum or zinc or the mixture of aluminum and zinc.
Particularly preferably, first coat of metal 20 and second coat of metal 30 are the mixture of aluminum and zinc, and the mass percent that zinc is in the mixture of aluminum and zinc is 17%～22%；First vacuum evaporation chamber 70 and the second vacuum evaporation chamber 80 all include that being deposited with chill roll 71, metallic aluminium evaporation boat 72 and metallic zinc evaporation boat 73, metallic aluminium evaporation boat 72 and metallic zinc evaporation boat 73 is respectively positioned on the bottom of evaporation chill roll 71.Although the present invention is provided with the first film medium 40 and the second thin film dielectrics 50, but still there is oxidative phenomena slowly when working under the big electric current of ac high-voltage for a long time in the coat of metal, the mixture using aluminum and zinc can be avoided generating the compact oxidation layer with aluminium sesquioxide as Main Ingredients and Appearance, then can affect the adhesion property of the coat of metal when zinc mass percent in the mixture of aluminum and zinc is too high, when zinc mass percent in the mixture of aluminum and zinc is 17%～22%, to have the oxidative resistance of preferable adhesion property and the coat of metal preferable for the coat of metal.
Further, intermediate film substrate 10 includes the length direction that structure repeats to extend and the width being perpendicular to length direction, the one side of intermediate film substrate 10 include the first metal evaporation district 11 for being deposited with first coat of metal 20 and not evaporation metal coating first stay border area 12, the another side of intermediate film substrate 10 include the second metal evaporation district 13 for being deposited with second coat of metal 30 and not evaporation metal coating second stay border area 14；First metal evaporation district 11 and second stays one end that border area 14 is positioned on intermediate film substrate 10 width, the second metal evaporation district 13 and first to stay the other end that border area 12 is positioned on intermediate film substrate 10 width.First metal evaporation district 11 includes towards the first the first flattened edge 21 staying side, border area 12 and the first the first curved edge 22 staying side, border area 12 dorsad, and the second metal evaporation district 13 includes towards the second the second flattened edge 31 staying side, border area 14 and the second the second curved edge 32 staying side, border area 14 dorsad.Above-mentioned improvement makes metallized film stable under high current status, the most easy-to-draw fire, punctures and damages, and arranges first and stays border area 12 and second to stay border area 14 to reduce further to draw fire, breakdown probability, reduce defect rate, improve product quality.
Further, the first metal evaporation district 11 and the second identical coating square 23 all including several matrix arrangement of metal evaporation district 13 structure, it is provided with clearance for insulation 24 between adjacent coating square 23, and adjacent coating square 23 is connected with each other at turning；The limit being positioned at the coating square 23 at the first curved edge 22 and the second curved edge 32 is semicircular arc limit 25, and coating square 23 each is tangent with two end points on semicircular arc limit 25 for two straight lines 26 connecting semicircular arc limit 25.The turning of adjacent coating square 23 is connected with each other, after locally puncturing, and the turning of the coating square 23 that can fuse, thus avoid the diffusion of short circuit current, reduce the caloric value of capacitor；And two straight lines 26 on semicircular arc limit 25 each are tangent with two end points on semicircular arc limit 25, therefore at the first curved edge 22 or the second curved edge 32, there is not sharp-pointed salient angle, thus advantageously reduce metallized film and draw fire and breakdown probability, and the first curved edge 22 or the second curved edge 32 can increase the gilding layer adhesive force to metallized film.
Yet further, the first film medium 40 and the second thin film dielectrics 50 all edges at two ends with intermediate film substrate 10 on the length direction of intermediate film substrate 10 flush；The first film medium 40 and second thin film dielectrics 50 end margin on intermediate film substrate 10 width lay respectively at first and stay border area 12 and second to stay border area 14, the first film medium 40 and second thin film dielectrics 50 other end edge on intermediate film substrate 10 width to flush with two end points on semicircular arc limit 25.Said structure is easy to make capacitor metalized safe thin film access in circuit by metal spraying and welding lead and is used.
Above content is detailed description the most made for the present invention, it is impossible to assert that the present invention is embodied as being only limitted to these explanations.For those skilled in the art, without departing from the inventive concept of the premise, it is also possible to make some simple deduction or replace, all should be considered as belonging to the scope of protection of the invention.
Claims (7)
1. a capacitor metalized safe film vapor deposition technique, is characterized in that, comprises the following steps:
Step one, have insulating property (properties) intermediate film substrate (10) one side evaporation one layer of first coat of metal (20), described first coat of metal (20) is aluminum or zinc or the mixture of aluminum and zinc, and described intermediate film substrate (10) is that polyolefine material is made；
Step 2, have in the one side of described first coat of metal (20) at described intermediate film substrate (10) evaporation and cover one layer of the first film medium (40) with insulating property (properties), described first coat of metal (20) is made to be positioned between described intermediate film substrate (10) and described the first film medium (40), and described intermediate film substrate (10) and described the first film medium (40) fit tightly, described the first film medium (40) is that polyolefine material is made；
Step 3, being deposited with one layer of second coat of metal (30) at the another side of described intermediate film substrate (10), described second coat of metal (30) is aluminum or zinc or the mixture of aluminum and zinc；
Step 4, have in the one side of described second coat of metal (30) at described intermediate film substrate (10) evaporation and cover one layer of second thin film dielectrics (50) with insulating property (properties), described second coat of metal (30) is made to be positioned between described intermediate film substrate (10) and described second thin film dielectrics (50), and described intermediate film substrate (10) and described second thin film dielectrics (50) fit tightly, described second thin film dielectrics (50) is that polyolefine material is made.
2. a kind of capacitor metalized safe film vapor deposition technique as claimed in claim 1, it is characterized in that, including metal metallized safety film vapor deposition equipment, described metal metallized safety film vapor deposition equipment includes intermediate film emptying roller (61), the first vacuum evaporation chamber (70), the first film emptying roller (62), the second vacuum evaporation chamber (80), the second thin film emptying roller (63) and finished films material receiving roller (64)；And comprise the following steps:
Step one, described intermediate film substrate (10) unreel from described intermediate film emptying roller (61), subsequently into described first vacuum evaporation chamber (70), are deposited with described first coat of metal (20)；
Step 2, described the first film medium (40) unreel from described the first film emptying roller (62), are then covered by upper described first coat of metal (20) and fit with described intermediate film substrate (10)；
Step 3, described intermediate film substrate (10) enter described second vacuum evaporation chamber (80), are deposited with described second coat of metal (30)；
Step 4, described second thin film dielectrics (50) unreel from described second thin film emptying roller (63), are then covered by upper described second coat of metal (30) and fit with described intermediate film substrate (10).
3. a kind of capacitor metalized safe film vapor deposition technique as claimed in claim 2, it is characterized in that, described first coat of metal (20) and described second coat of metal (30) are the mixture of aluminum and zinc, and the mass percent that zinc is in the mixture of aluminum and zinc is 17%～22%；Described first vacuum evaporation chamber (70) and described second vacuum evaporation chamber (80) all include being deposited with chill roll (71), metallic aluminium evaporation boat (72) and metallic zinc evaporation boat (73), and described metallic aluminium evaporation boat (72) and described metallic zinc evaporation boat (73) are respectively positioned on the bottom of described evaporation chill roll (71).
4. a kind of capacitor metalized safe film vapor deposition technique as claimed in claim 1, it is characterized in that, described intermediate film substrate (10) includes the length direction that structure repeats to extend and the width being perpendicular to described length direction, the one side of described intermediate film substrate (10) include the first metal evaporation district (11) for being deposited with described first coat of metal (20) and not evaporation metal coating first stay border area (12), the another side of described intermediate film substrate (10) include the second metal evaporation district (13) for being deposited with described second coat of metal (30) and not evaporation metal coating second stay border area (14)；Described first metal evaporation district (11) and described second stays one end that border area (14) is positioned on described intermediate film substrate (10) width, described second metal evaporation district (13) and described first to stay the other end that border area (12) is positioned on described intermediate film substrate (10) width.
5. a kind of capacitor metalized safe film vapor deposition technique as claimed in claim 4, it is characterized in that, described first metal evaporation district (11) includes the first curved edge (22) staying border area (12) side towards the described first the first flattened edge (21) staying border area (12) side and the most described first, and described second metal evaporation district (13) includes the second curved edge (32) staying border area (14) side towards the described second the second flattened edge (31) staying border area (14) side and the most described second.
6. a kind of capacitor metalized safe film vapor deposition technique as claimed in claim 5, it is characterized in that, described first metal evaporation district (11) the coating square (23) that all include several matrix arrangement identical with described second metal evaporation district (13) structure, it is provided with clearance for insulation (24) between adjacent described coating square (23), and adjacent described coating square (23) is connected with each other at turning；The limit of the described coating square (23) being positioned at described first curved edge (22) and described second curved edge (32) place is semicircular arc limit (25), and described coating square (23) is used for connecting two straight lines (26) of described semicircular arc limit (25) and each is tangent with two end points of described semicircular arc limit (25).
7. a kind of capacitor metalized safe film vapor deposition technique as claimed in claim 6, it is characterized in that, described the first film medium (40) and described second thin film dielectrics (50) all edges at two ends with described intermediate film substrate (10) on the length direction of described intermediate film substrate (10) flush；Described the first film medium (40) and described second thin film dielectrics (50) end margin on described intermediate film substrate (10) width lay respectively at described first and stay border area (12) and described second to stay border area (14), described the first film medium (40) and described second thin film dielectrics (50) other end edge on described intermediate film substrate (10) width to flush with two end points of described semicircular arc limit (25).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610476622.0A CN105970158A (en) | 2016-06-27 | 2016-06-27 | Evaporation technology of metalized safety thin film of capacitor |
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| CN201610476622.0A CN105970158A (en) | 2016-06-27 | 2016-06-27 | Evaporation technology of metalized safety thin film of capacitor |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106340382A (en) * | 2016-09-30 | 2017-01-18 | 铜陵市超越电子有限公司 | Explosion-proof metallized thin film |
| CN108364787A (en) * | 2017-12-29 | 2018-08-03 | 安徽铜峰电子股份有限公司 | A kind of High-temperature-rescapacitor capacitor film and its capacitor |
| CN108531861A (en) * | 2018-04-18 | 2018-09-14 | 钱立文 | Intelligent photovoltaic component energy storage metallized film evaporation coating method |
| CN110597422A (en) * | 2019-09-02 | 2019-12-20 | 海宁钟江智能科技有限公司 | Aluminum metal grid capacitor touch film and manufacturing method thereof |
| CN113684464A (en) * | 2021-08-27 | 2021-11-23 | 辽宁分子流科技有限公司 | A coiling formula equipment for preparation of graphite alkene composite film |
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Application publication date: 20160928 |