CN105957909A - Barrier cascading quantum well infrared detector - Google Patents
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- CN105957909A CN105957909A CN201610407211.6A CN201610407211A CN105957909A CN 105957909 A CN105957909 A CN 105957909A CN 201610407211 A CN201610407211 A CN 201610407211A CN 105957909 A CN105957909 A CN 105957909A
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- 230000004888 barrier function Effects 0.000 title claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 49
- 238000005036 potential barrier Methods 0.000 claims description 26
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000010276 construction Methods 0.000 claims description 5
- 239000000523 sample Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 230000005641 tunneling Effects 0.000 abstract description 10
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000005283 ground state Effects 0.000 description 17
- 230000005281 excited state Effects 0.000 description 15
- 238000002955 isolation Methods 0.000 description 7
- 230000004043 responsiveness Effects 0.000 description 6
- 230000032258 transport Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- 230000007723 transport mechanism Effects 0.000 description 5
- 239000003518 caustics Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 101100204059 Caenorhabditis elegans trap-2 gene Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
Abstract
The invention discloses a barrier cascading quantum well infrared detector. The detector comprises a compound semiconductor material substrate, wherein seven barrier layers and quantum well layers with different widths are alternately grown on the substrate as one circle; multiple-quantum wells are repeatedly grown for multiple circles; and the detector also comprises an auxiliary conveying unit including two groups of quantum well layers and barrier layers. By adoption of the cascading tunneling structure, a photoelectric signal which is stronger than that of the existing quantum well infrared detector can be formed in the quantum well region at a low-temperature state under infrared irradiation, so that the detector is more applicable to the quantum well infrared focal plane device.
Description
Technical field
The present invention relates to a kind of quantum trap infrared detector, be specifically related to a kind of potential barrier cascade infrared spy of SQW
Survey device.
Background technology
In current quantum type infrared focus plane technology, photosensitive element chip is all by the space of some guide types
The detector pixel composition that upper electricity-optics is discrete.Compared to mercury-cadmium tellurid detector, quantum well infrared
Utensil has Material growth and technical maturity, large area Array Uniformity is good, yield rate is high, the advantage of low cost,
But quantum efficiency is relatively low, to such an extent as to responsiveness is relatively low, thus for quantum efficiency and responsiveness optimization particularly
Important.
The ultimate principle of quantum trap infrared detector determines the quantum efficiency of device and is proportional to absorptance, for
Improve the quantum efficiency of device, or in order to increase responsiveness under the conditions of similar detection significantly, need
Increase the electron concentration in SQW ground state, but the increase of electron concentration directly increases to superlinearity again dark electricity
Stream, the detectivity directly resulting in device declines.The basic physics cause of the biggest dark current is the energy of excited state
There is the highest density of electronic states that light absorbs nothing contribution in amount position, if can carry out these redundant electronic states
Effectively utilize, then the performance improvement for quantum trap infrared detector has practical value.
There has been proposed a kind of structure of quantum cascade detector at present, based on phonon assisted tunneling mechanism, have
Photovoltaic property.See reference document L.Gendron et.al. " Quantum cascade photodetector ",
Applied Physics Letters Vol.85,Daniel Hofstetter et.al.“23GHz operation of a
room temperature photovoltaic quantum cascade detector at 5.35μm”,Applied
Although the responsiveness of Physics Letters Vol.89. device is superior not as good as guide type device, but operating temperature is relatively
Height, and cascade transport mechanism and can be applied in guide type device, make detection performance be improved.
Patent of invention (application number 201410403444.X) discloses a kind of potential barrier cascade infrared spy of SQW
Survey device, the present invention relatively this invention, add comprise two groups of quantum well layers and barrier layer transport auxiliary unit,
It is capable of the enhancing of photosignal.
Summary of the invention
It is an object of the invention to provide a kind of potential barrier cascade quantum trap infrared detector, solve detector optical telecommunications
Number enhancing problem.
The design of the present invention is as follows:
A kind of potential barrier cascade quantum trap infrared detector, it includes substrate 1, MQW 2, upper electrode 3,
Bottom electrode 4, it is characterised in that:
The structure of described a kind of potential barrier cascade quantum trap infrared detector is: grow Multiple-quantum on substrate 1
Trap 2, multi-quantum pit structure comprises lower electrode layer and upper electrode layer, prepares bottom electrode 4 on lower electrode layer,
Electrode 3 on preparing on upper electrode layer；
Described substrate 1 is GaAs substrate；
The structure of described MQW 2 is:
C1L1(AL2)nBL2C2
Wherein: C1For lower electrode layer, C2For upper electrode layer；L1Be thickness be 40 to 60nm width barrier layer；
L2Be thickness be 2 to the potential barrier sealing coats of 3nm；A is the basic probe unit of MQW coupled structure,
Its structure is:
QW1L1’QW2L2’QW3L3’QW4L4’QW5L5’QW6L6’QW7
B is the auxiliary sending unit of MQW coupled structure, and its structure is:
QWB1LB1QWB2
C1With C2It is Si heavily doped GaAs thin layer, C1Thickness is 0.5 to 1 μm, C2Thickness
It is 2 to 3 μm；QW1—QW7For quantum well layer, wherein QW1Be thickness be 6.8 to 8nm Si adulterate
GaAs layer, QW2—QW7Be thickness be the GaAs layer of undoped of 2 to 5.4nm；L1’—L6’
Be thickness be 3.1 to undoped Al of 6nmxGa(1-x)As layer, Al component x is 0.14 to 0.16；With A
For single cycle, repeat 30-50 cycle；QWB1And QWB2Be thickness be 6.8 to 12nm non-mix
Miscellaneous GaAs layer；LB1Be thickness be 2 to the undoped AlGaAs layers of 3nm；Described upper electrode 3
With the Au material that bottom electrode 4 is Ni and 400nm being sequentially depositing AuGe, 20nm that thickness is 100nm
Material is prepared as；
L1’QW2L2’QW3L3’QW4L4’QW5L5’QW6L6’QW7Composition potential barrier cascade structure.
Described upper electrode layer C2For raster shape, optical grating construction is bidimensional diffraction grating, screen periods 3
Micron, hole is square, and the length of side is 1.5 microns, and the degree of depth is 1.5 microns.
The present invention has following good effect and an advantage:
1. due to the fact that and have employed potential barrier cascade structure, quantum well infrared compared to conventional photo conductivity type
Device, adds a kind of photovoltaic transport mechanism, the redundant electronic state of excited state has been carried out effective utilization, effectively
The quantum efficiency that improve infrared light and responsiveness.
2. the structure of photovoltaic transport mechanism is optimized by the present invention, is allowed to cascade detector than regular quantum
Photovoltaic transport property more preferable.The introducing of MQW coupled structure auxiliary sending unit, can increase photoelectricity
The transport efficiency of stream, and faint on dark current impact, the final detectivity improving device.
3. the present invention has photoconduction mechanism and photovoltaic mechanism concurrently, under working bias voltage, with single photoconduction mechanism
The quanta cascade detector of quantum trap infrared detector and single photovoltaic mechanism compare, its quantum efficiency and sound
Should rate higher.
4. the present invention has photovoltaic effect, and optical signal can directly change into voltage signal, and light vor signal
Being directly proportional to structural cycle number, compared to photoconduction type device, the present invention is easier to realize the standard of photosignal
Really output and reading.
Accompanying drawing explanation
The schematic diagram of the present invention is as follows:
Fig. 1 is the single cycle potential barrier cascade quantum trap infrared detector photoelectric respone schematic diagram of the present invention,
Right side SQW is first SQW QW in next cycle1；
Fig. 2 is last cycle quantum trap infrared detector photoelectric respone schematic diagram of the present invention, and the rightmost side is upper
Electrode layer C2；
Fig. 3 is the potential barrier cascade quantum trap infrared detector structural representation of the present invention；
Fig. 4 is the potential barrier cascade quantum trap infrared detector upper electrode layer C of Fig. 32Partial enlargement cross-sectional schematic.
Detailed description of the invention
Single cycle potential barrier cascade quantum trap infrared detector photoelectric respone to the present invention is former below in conjunction with the accompanying drawings
Reason is elaborated: see Fig. 1, under bias, infrared light will be in the electricity of ground state in doped quantum well
Son is energized in excited state, forms the photoelectron of detector.This photoelectron has two kinds of approach to form photoelectric currents:
1) it is transported to continuous state, is oriented under extra electric field and transports；2) send out with adjacent coupling quantum well ground state
Raw phonon assisted tunneling, thus photoelectron is transferred to adjacent SQW.MQW coupling in Fig. 2
The introducing of structure auxiliary sending unit, can increase the transport efficiency of photoelectric current, and faint on dark current impact,
The final detectivity improving device.
1. the preparation of MQW chip
Example one:
(1) growth of the thin-film material of MQW chip:
Molecular number extension (MBE) is used sequentially to grow by following structure on GaAs substrate 1, C1For GaAs:
Si, concentration is 1018/cm3, thickness is 0.5 μm；L1For Al0.16Ga0.84As, thickness is 40nm；QW1
For GaAs:Si, concentration is 1017/cm3, thickness is 6.8nm；L1' it is Al0.16Ga0.84As, thickness is 5.65nm；
QW2For GaAs, thickness is 2nm；L2' it is Al0.16Ga0.84As, thickness is 3.96nm；QW3For GaAs,
Thickness is 2.3nm；L3' it is Al0.16Ga0.84As, thickness is 3.1nm；QW4For GaAs, thickness is 2.8nm；
L4' it is Al0.16Ga0.84As, thickness is 3.1nm；QW5For GaAs, thickness is 3.3nm；L5' it is
Al0.16Ga0.84As, thickness is 3.1nm；QW6For GaAs, thickness is 4nm；L6' it is Al0.16Ga0.84As,
Thickness is 3.1nm；QW7For GaAs, thickness is 5nm；Then with QW1To QW7It is a cycle,
And use L between every two cycles2For Al0.16Ga0.84As, thickness is that 2nm does potential barrier isolation, repeated growth
In 30 cycles, then grow L2For Al0.16Ga0.84As, thickness is that 2nm does potential barrier isolation；Then grow
QWB1For GaAs, thickness is 6.8nm；LB1For Al0.16Ga0.84As, thickness is 2nm；QWB2For
GaAs, thickness is 11nm；Then L is grown2For Al0.16Ga0.84As, thickness is that 2nm does potential barrier isolation；
C2For GaAs:Si, concentration is 1018/cm3, thickness is 2 μm, forms a MQW 2.
Width is the GaAs QW of 6.8nm1In SQW, ground state and first excited state are in shape in SQW
Becoming limited localized modes, wherein first excited state position is near trap mouth, simultaneously under suitably bias, and first
Excited state and adjacent SQW QW2In ground state level difference about longitudinal optical phonon energy, can
Relaxation, simultaneously SQW QW is carried out by phonon assisted tunneling2, QW3, QW4, QW5, QW6,
QW7Ground state successively all forms phonon assisted tunneling state with the ground state of adjacent quantum wells.In the devices
QW1, QW2, QW3, QW4, QW5, QW6, QW7The combination of 7 quantum well structures forms one
Basic probe unit, i.e. forms a principle device.
(2) prepared by electrode
Upper electrode 3 is directly made in the C of top2On layer, bottom electrode 4 is by corroding part C1More than Ceng
Material all remove, expose C1Layer, then on this layer, prepare bottom electrode 4, see Fig. 3.Upper/lower electrode
Are electronically beam evaporation thickness successively is the Au material of Ni and 400nm of AuGe, 20nm of 100nm
It is prepared from.
(3) prepared by MQW chip table
At upper electrode layer C2On make grating by caustic solution, optical grating construction is bidimensional diffraction grating, grating
Cycle 3 microns, hole be square, the length of side is 1.5 microns, and the degree of depth is 1.5 microns, sees Fig. 4, make into
The infrared luminous energy penetrated sufficiently is coupled in SQW, produces SQW QW1In electronics from ground state
To first excited state transition.
Example two:
(1) growth of the thin-film material of MQW chip:
Molecular number extension (MBE) is used sequentially to grow by following structure on GaAs substrate 1, C1For
GaAs:Si, concentration is 1018/cm3, thickness is 0.75 μm；L1For Al0.15Ga0.85As, thickness is 50nm；
QW1For GaAs:Si, concentration is 1017/cm3, thickness is 7.6nm；L1' it is Al0.15Ga0.85As, thickness
For 5.8nm；QW2For GaAs, thickness is 2.2nm；L2' it is Al0.15Ga0.85As, thickness is 4.1nm；
QW3For GaAs, thickness is 2.5nm；L3' it is Al0.15Ga0.85As, thickness is 3.3nm；QW4For GaAs,
Thickness is 3nm；L4' it is Al0.15Ga0.85As, thickness is 3.3nm；QW5For GaAs, thickness is 3.5nm；
L5' it is Al0.15Ga0.85As, thickness is 3.3nm；QW6For GaAs, thickness is 4.2nm；L6' it is
Al0.15Ga0.85As, thickness is 3.3nm；QW7For GaAs, thickness is 5.2nm；Then with QW1Arrive
QW7It is a cycle, and uses L between every two cycles2For Al0.15Ga0.85As, thickness is that 2.5nm does
Potential barrier is isolated, and in 40 cycles of repeated growth, then grows L2For Al0.15Ga0.85As, thickness is that 2nm does
Potential barrier is isolated；Then QW is grownB1For GaAs, thickness is 7.6nm；LB1For Al0.15Ga0.85As is thick
Degree is 2nm；QWB2For GaAs, thickness is 12nm；Then L is grown2For Al0.15Ga0.85As, thickness
Potential barrier isolation is done for 2nm；C2For GaAs:Si, concentration is 1018/cm3, thickness is 2.5 μm, is formed
One MQW 2.
Width is the GaAs QW of 7.6nm1In SQW, ground state and first excited state are in shape in SQW
Becoming limited localized modes, wherein first excited state position is near trap mouth, simultaneously under suitably bias, and first
Excited state and adjacent SQW QW2In ground state level difference about longitudinal optical phonon energy, can
Relaxation, simultaneously SQW QW is carried out by phonon assisted tunneling2, QW3, QW4, QW5, QW6,
QW7Ground state successively all forms phonon assisted tunneling state with the ground state of adjacent quantum wells.In the devices
QW1, QW2, QW3, QW4, QW5, QW6, QW7The combination of 7 quantum well structures forms one
Basic probe unit, i.e. forms a principle device.
(2) prepared by electrode
Upper electrode 3 is directly made in the C of top2On layer, bottom electrode 4 is by corroding part C1More than Ceng
Material all remove, expose C1Layer, then on this layer, prepare bottom electrode 4, see Fig. 3.Upper/lower electrode
Are electronically beam evaporation thickness successively is the Au material of Ni and 400nm of AuGe, 20nm of 100nm
It is prepared from.
(3) prepared by MQW chip table
At upper electrode layer C2On make grating by caustic solution, optical grating construction is bidimensional diffraction grating, grating
Cycle 3 microns, hole be square, the length of side is 1.5 microns, and the degree of depth is 1.5 microns, sees Fig. 4, make into
The infrared luminous energy penetrated sufficiently is coupled in SQW, produces SQW QW1In electronics from ground state
To first excited state transition.
Example three:
(1) growth of the thin-film material of MQW chip:
Molecular number extension (MBE) is used sequentially to grow by following structure on GaAs substrate 1, C1For GaAs:
Si, concentration is 1018/cm3, thickness is 1 μm；L1For Al0.14Ga0.86As, thickness is 60nm；QW1
For GaAs:Si, concentration is 1017/cm3, thickness is 8nm；L1' it is Al0.14Ga0.86As, thickness is 6nm；
QW2For GaAs, thickness is 2.4nm；L2' it is Al0.14Ga0.86As, thickness is 4.3nm；QW3For GaAs,
Thickness is 2.7nm；L3' it is Al0.14Ga0.86As, thickness is 3.5nm；QW4For GaAs, thickness is 3.2nm；
L4' it is Al0.14Ga0.86As, thickness is 3.5nm；QW5For GaAs, thickness is 3.7nm；L5' it is
Al0.14Ga0.86As, thickness is 3.5nm；QW6For GaAs, thickness is 4.4nm；L6' it is Al0.14Ga0.86As,
Thickness is 3.5nm；QW7For GaAs, thickness is 5.4nm；Then with QW1To QW7It is a cycle,
And use L between every two cycles2For Al0.14Ga0.86As, thickness is that 3nm does potential barrier isolation, repeated growth
In 50 cycles, then grow L2For Al0.14Ga0.86As, thickness is that 2nm does potential barrier isolation；Then grow
QWB1For GaAs, thickness is 8nm；LB1For Al0.14Ga0.86As, thickness is 2nm；QWB2For GaAs,
Thickness is 13nm；Then L is grown2For Al0.14Ga0.86As, thickness is that 2nm does potential barrier isolation；C2For
GaAs:Si, concentration is 1018/cm3, thickness is 3 μm, forms a MQW 2.
Width is the GaAs QW of 8nm1In SQW, ground state and first excited state are in SQW being formed
Limited localized modes, wherein first excited state position is near trap mouth, and simultaneously under suitably bias, first swashs
Send out state and adjacent SQW QW2In ground state level difference about longitudinal optical phonon energy, can lead to
Cross phonon assisted tunneling and carry out relaxation, simultaneously SQW QW2, QW3, QW4, QW5, QW6, QW7
Ground state successively all forms phonon assisted tunneling state with the ground state of adjacent quantum wells.QW in the devices1,
QW2, QW3, QW4, QW5, QW6, QW7The combination of 7 quantum well structures forms a basic spy
Survey unit, i.e. form a principle device.
(2) prepared by electrode
Upper electrode 3 is directly made in the C of top2On layer, bottom electrode 4 is by corroding part C1More than Ceng
Material all remove, expose C1Layer, then on this layer, prepare bottom electrode 4, see Fig. 3.Upper/lower electrode
Are electronically beam evaporation thickness successively is the Au material of Ni and 400nm of AuGe, 20nm of 100nm
It is prepared from.
(3) prepared by MQW chip table
At upper electrode layer C2On make grating by caustic solution, optical grating construction is bidimensional diffraction grating, grating
Cycle 3 microns, hole be square, the length of side is 1.5 microns, and the degree of depth is 1.5 microns, sees Fig. 4, make into
The infrared luminous energy penetrated sufficiently is coupled in SQW, produces SQW QW1In electronics from ground state
To first excited state transition.
2. the work process of device:
MQW chip is placed in a refrigeration dewar with infrared band optical window.Infrared sound
Answering wave band is 6-10 micron, and chip freezes to about 80K.Carefully finely tune the bias voltage 7 of device, formed
Good phonon assisted tunneling condition, is radiated at infrared light 5 on MQW chip subsequently, now due to
Exciting of infrared light causes SQW QW1In electronics be excited enter first excited state, now photoelectron has
Two kinds of transport mechanism: 1) it is transported to continuous state, it is oriented under extra electric field and transports；2) with adjacent idol
With SQW ground state generation phonon assisted tunneling, thus photoelectron is transferred to adjacent SQW, and should
Electronics is difficult to reversely be transported to QW1In SQW.The completing of this process is the formation of photo-signal 6.
Relative to regular quantum trap infrared detector, This structure increases transport mechanism based on phonon assisted tunneling,
Enhance the responsiveness of device and improve quantum efficiency.
Claims (2)
1. a potential barrier cascade quantum trap infrared detector, it includes substrate (1), MQW (2), on
Electrode (3), bottom electrode (4), it is characterised in that:
The structure of described a kind of potential barrier cascade quantum trap infrared detector is: many in the upper growth of substrate (1)
SQW (2), multi-quantum pit structure comprises lower electrode layer and upper electrode layer, electricity under preparation on lower electrode layer
Pole (4), prepares electrode (3) on upper electrode layer；
Described substrate (1) is GaAs substrate；
The structure of described MQW (2) is:
C1L1(AL2)nBL2C2
Wherein: C1For lower electrode layer, C2For upper electrode layer；L1Be thickness be 40 to 60nm width barrier layer；L2
Be thickness be 2 to the potential barrier sealing coats of 3nm；A is the basic probe unit of MQW coupled structure, its
Structure is:
QW1L1’QW2L2’QW3L3’QW4L4’QW5L5’QW6L6’QW7
B is the auxiliary sending unit of MQW coupled structure, and its structure is:
QWB1LB1QWB2
C1With C2It is Si heavily doped GaAs thin layer, C1Thickness is 0.5 to 1 μm, C2Thickness is
2 to 3 μm；QW1To QW7For quantum well layer, wherein QW1Be thickness be 6.8 to 8nm Si adulterate
GaAs layer, QW2To QW7Be thickness be the GaAs layer of the undoped of 2nm to 8nm；L1' extremely
L6' be thickness be 3.1 to undoped Al of 6nmxGa(1-x)As layer, Al component x is 0.14 to 0.16；With
A is single cycle, repeats 30-50 cycle；QWB1And QWB2Be thickness be 6.8 non-to 12nm
The GaAs layer of doping；LB1Be thickness be 2 to the undoped AlGaAs layers of 3nm；
Described upper electrode (3) and bottom electrode (4) are for be sequentially depositing AuGe, 20nm that thickness is 100nm
The Au material of Ni and 400nm be prepared from.
A kind of potential barrier cascade quantum trap infrared detector the most according to claim 1, it is characterised in that:
Described upper electrode layer C2For raster shape, optical grating construction is bidimensional diffraction grating, screen periods 3 microns,
Hole is square, and the length of side is 1.5 microns, and the degree of depth is 1.5 microns.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013058580A (en) * | 2011-09-08 | 2013-03-28 | Fuji Electric Co Ltd | Quantum infrared detector |
| CN104183658A (en) * | 2014-08-15 | 2014-12-03 | 中国科学院上海技术物理研究所 | Potential barrier cascading quantum well infrared detector |
| CN205810833U (en) * | 2016-06-12 | 2016-12-14 | 中国科学院上海技术物理研究所 | Potential barrier cascade quantum trap infrared detector |
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2016
- 2016-06-12 CN CN201610407211.6A patent/CN105957909A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013058580A (en) * | 2011-09-08 | 2013-03-28 | Fuji Electric Co Ltd | Quantum infrared detector |
| CN104183658A (en) * | 2014-08-15 | 2014-12-03 | 中国科学院上海技术物理研究所 | Potential barrier cascading quantum well infrared detector |
| CN205810833U (en) * | 2016-06-12 | 2016-12-14 | 中国科学院上海技术物理研究所 | Potential barrier cascade quantum trap infrared detector |
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