CN105932533A - Multi-wavelength mid-infrared optical parametric oscillator based on self-Raman effect of crystal - Google Patents
Multi-wavelength mid-infrared optical parametric oscillator based on self-Raman effect of crystal Download PDFInfo
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- CN105932533A CN105932533A CN201610550728.0A CN201610550728A CN105932533A CN 105932533 A CN105932533 A CN 105932533A CN 201610550728 A CN201610550728 A CN 201610550728A CN 105932533 A CN105932533 A CN 105932533A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/1083—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering using parametric generation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/1086—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering using scattering effects, e.g. Raman or Brillouin effect
Abstract
The invention relates to a mid-infrared optical parametric oscillator which produces multi-wavelength laser outputs by use of the self-Raman effect and the optical parametric process of a crystal, and belongs to the technical field of multi-wavelength lasers. The oscillator comprises four parts of a pump light source, a resonant cavity, a nonlinear frequency-conversion crystal and a partial refractive index modulation system. According to the mid-infrared optical parametric oscillator, through utilization of the broadband tuning capability of the optical parametric oscillator and the feature that an intra-cavity oscillation optical power is relatively high, stable multi-order Raman lasers are produced by signal light in the resonant cavity by designing the structure and parameters of the resonant cavity; high efficiency frequency differences can be produced between the Raman lasers and the pump light source by methods such as carrying out partial modulation on the refractive index of the nonlinear crystal; and further the stable multi-wavelength laser outputs are obtained. According to the mid-infrared optical parametric oscillator, near-infrared signal light and mid-infrared laser outputs of multiple different wavelengths can be realized by one pump light source of a single wavelength; a complex wavelength selection device is unnecessarily imported or a specially polarized crystal is unnecessarily customized; and the mid-infrared optical parametric oscillator is simple in structure, easy in realization and stable and reliable in performance.
Description
Technical field
The present invention relates to a kind of mid-infrared light utilizing crystal self Raman effect and optical parameter process to produce multiwavelength laser output
Learn parametric oscillator, belong to multiwavelength laser technology category, can be widely applied to frequency comb, multiwavelength laser and non-linear frequency
The fields such as conversion.
Background technology
Multiwavelength laser has a wide range of applications in fields such as laser communication, remote sensing remote measurement, scientific researches, particularly some wavelength
It is spaced the multiwavelength laser (also referred to as multimodal laser) of narrower (less than tens nanometer magnitude), can comb with forming frequency, the light how
The spectrum aspect such as imaging and gas composition detection has irreplaceable effect.People can by multispectral conjunction bundle, many raster chart,
The various ways such as multistage Raman effect or multistage brillouin effect produce multimodal laser, but these scheme works wave bands are mostly focused on
Near infrared band, it is difficult to realize mid-infrared laser output, and need to add grating or arrowband plated film sheet equiwavelength selection in systems
Device realizes multi-wavelength, and the one side that adds of these devices limits the wavelength band of system, on the other hand improves answering of system
Polygamy and cost, be unfavorable for the application under the conditions of higher-wattage.Particularly the middle-infrared band of 3～5 microns, due to great majority
Material has strong absorption at this wave band, and relevant wavelength selector develops difficulty, expensive, and is difficult to interval
Narrower wavelength is distinguished, and limits the performance level of existing multi-wavelength middle infrared laser.
Optical parametric oscillator is a kind of broad tuning coherent source, and its ultimate principle is difference frequency, and the most a branch of frequency and strength ratio are higher
Laser beam (referred to as pump light ωp) light beam (the referred to as flashlight ω relatively low with a branch of frequency and intensitys) simultaneously by meeting phase
The nonlinear dielectric of position matching condition, result is that flashlight obtains amplification, the most also produces another beam of laser (referred to as ideler frequency light ωi)
Output, the frequency of ideler frequency light is difference (the i.e. ω of pump light frequency and flashlight frequencyi=ωp-ωs).Due to optical parametric oscillator
Not relying on level structure, but produce gain by phase matched, therefore its service band exceeds well over conventional solid state laser,
It it is the unique side producing continuously adjustabe wavelength on a large scale (wavelength cover from ultraviolet light to visible ray to infrared light) laser at present
Method, is also the important channel realizing mid-infrared laser output.
In the design process, optical parametric oscillator mainly considers that the refractive index of crystal makes it meet phase-matching condition, due to crystalline substance
Body refractive index n is temperature and the function of corresponding light frequency, for birefringent phase matching type crystal, phase-matching condition such as formula
(1) shown in:
ωpn(ωp,T)-ωsn(ωs,T)-ωin(ωi, T)=0 (1)
Quasi-phase matched type crystal, refers to by crystal is carried out period polarized technique so that it is refractive index changes with polarization cycle Λ,
Shown in its phase-matching condition such as formula (2):
In formula, n is crystal refractive index, is temperature and the function of corresponding light frequency, n (ωp,T)、n(ωs,T)、n(ωi, T) and it is respectively crystalline substance
Body is under the conditions of temperature T, and corresponding light frequency is ωp、ωsAnd ωiTime refractive index.
From formula (1) and formula (2), for given pump light ωpWith flashlight ωs, only can produce a frequency is ωi's
Mid-infrared laser.Multi-wavelength to be realized exports, it usually needs puts into polylith different crystal at intracavity and meets different phase matched bars
Part (list of references 1:Zhang T, Yao J, Zhu X, et al.Widely tunable, high-repetition-rate, dual signal-wave
optical parametric oscillator by using two periodically poled crystals[J].Optics Communications,
2007,272 (1): 111-115) different structure (list of references 2:Ji F, Lu R, Li B, et al. are generated, or in one piece of crystal
Mid-infrared tunable dual-wavelength generation based on a quasi-phase-matched optical
Parametric oscillator [J] .Optics Communications, 2009,282 (1): 126-128), or need to use multiple different ripple
Long pump light source (list of references 3: Zhang Wei, Peng Yuefeng, Wei Xingbin etc., a kind of two waveband multi-wavelength infrared light parametric oscillation
Device, Chinese invention patent application publication date: 2015-02-18) complex process and define use wave band, it is difficult to realize more ripple
Long laser output.
The present invention propose a kind of utilize crystal in optical parametric oscillator obtain the output of multi-wavelength mid-infrared laser from Raman effect
Device, by crystal being carried out local modulation in optical parametric oscillator, except realizing pump light and flashlight in system
Difference frequency outside, it is also possible to realize the difference frequency between each rank Raman light of pump light and flashlight, and then obtain stable multi-wavelength
Laser exports.The program has broadband tuning capability, and need not additional grating or arrowband plated film lens equiwavelength's selector,
Simple in construction, wavelength is controlled, is suitable for wave band wide, stable and reliable for performance.
Summary of the invention
The present invention seeks to propose a kind of multi-wavelength optical parametric oscillator, it is intended to utilize the broadband of optical parametric oscillator to tune
Ability and the higher feature of intracavity oscillation light power, by design cavity resonator structure and parameter, make the flashlight in resonator cavity produce
Stable multistage raman laser, then make raman laser and pump light by nonlinear crystal refractive index being carried out the approach such as local modulation
Can efficient difference frequency, and then obtain stable multiwavelength laser output.It is real that the present invention only needs the pump light of a single wavelength to get final product
The near infrared signal light of existing multiple different wave lengths and mid-infrared laser output, and be not required to introduce complicated wavelength selecting device or customization
The crystal of special polarization, simple in construction, easily realize, stable and reliable for performance.
The technical solution used in the present invention is: based on crystal from the multi-wavelength mid-infrared optical parametric oscillator of Raman effect, mainly
Including pump light source, resonator cavity, additive mixing crystal, four parts of local indexes of refraction modulating system, pump light source is used for carrying
It is ω for frequencypNear-infrared pump light and incident resonator cavity in additive mixing crystal, setting up frequency in resonator cavity is ωs's
Near infrared signal light generation, and with pump light ωpIt is ω that difference frequency produces frequencyiMiddle-infrared band ideler frequency light output, ωi=ωp-ωs；
Cavity mirrors reflectivity, radius of curvature and relative position etc. are such as changed, thus it is possible to vary flashlight ω by changing resonator parametersPower is close
Degree so that it is produce flashlight ω in additive mixing crystalsSingle order Raman light ωr1；Changed by local indexes of refraction modulating system
The phase-matching condition of additive mixing crystal, it is achieved pump light ωpAnd ωr1Difference frequency, output middle-infrared band difference frequency light ωd1,
ωd1=ωp-ωr1。
It is ω that pump light source as above is used for providing frequencypPump light, can be pulsed laser light source, it is also possible to be continuous
LASER Light Source.
Resonator cavity as above is made up of multiaspect chamber mirror, is used for providing flashlight ωsWith Raman light ωr1Feedback, set up flashlight
ωsWith Raman light ωr1Vibration, can be standing-wave cavity, it is also possible to be travelling-wave cavity.
Additive mixing crystal as above is used for by phase matched mode being pump light ωpWith flashlight ωsProduce ideler frequency light
ωiProcess provide gain, be flashlight ω by the Raman effect of crystal selfsProduce the graceful smooth ω of single orderr1Process provide gain and
It is pump light ω by phase matched modepWith Raman light ωr1Difference frequency produces ωd1Process provide gain, can be quasi-phase matched
Crystal, it is also possible to be birefringent phase matching crystal.Local indexes of refraction modulating system as above is for brilliant at additive mixing
Body is internally formed default index distribution, enables additive mixing crystal to meet pump light ω simultaneouslypWith flashlight ωsDifference frequency produces
Raw ideler frequency light ωiPhase-matching condition, and pump light ωpWith Raman light ωr1Difference frequency produces the laser ω of middle-infrared bandd1Phase
Position matching condition.
Local indexes of refraction modulating system as above can be modulated by following four kinds of modes: 1. in non-thread in preparation process
Property frequency-changer crystal is internal introduces local indexes of refraction distribution；2. introduce partial temperature control device and control additive mixing crystal boundaries product
Raw temperature difference；The most additional additive mixing crystal can absorbing light source or utilizing crystal to ideler frequency light with the presence of relatively strong absorption
Self absorption effect makes crystals form temperature difference distribution；4. pair additive mixing crystal extra electric field or pressure field are modulated.
By technique scheme it can be seen that it is ω that device of the present invention is simultaneously achieved frequencyiIdeler frequency light and frequency be ωd1's
Difference frequency light both mid-infrared lasers export.The present invention can also such as change cavity mirrors reflectivity, curvature by changing resonator parameter
Radius and position relatively change flashlight ωsPower density so that it is in additive mixing crystal produce flashlight ωsSingle order
And Higher-order Raman light ωr1、ωr2、ωr3、ωr4..., the phase place of additive mixing crystal is changed by local indexes of refraction modulating system
Matching condition, it is achieved pump light ωpWith flashlight ωsSingle order and the difference frequency of Higher-order Raman light, output middle-infrared band multi-wavelength
Difference frequency light ωd1、ωd2、ωd3、ωd4..., wherein ωdj=ωp-ωrj, j=1,2,3.......
The present invention has following technical effect that
1, the present invention can realize the output of multi-wavelength mid-infrared laser under the conditions of single wavelength laser pump (ing)；
2, present invention utilizes the feature that self Raman frequency shift of additive mixing crystal is narrower, be not required to additional grating or arrowband plated film sheet
Equiwavelength's selector, it is possible to realize the mid-infrared multiwavelength laser output that interval is narrower；
3, the present invention can be by changing resonator parameter and local index modulation scheme, it is achieved the mid-infrared of different wave length quantity
Laser exports；
4, present configuration is simple, is suitable for wave band wide, and produced number of wavelengths and intensity stabilization are controlled.
Accompanying drawing explanation
Fig. 1 is the embodiment of the present invention 1: accesses TEC by forward and realizes the multi-wavelength mid-infrared optical parameter of additional temperature modulation
Oscillator principle schematic diagram；
Fig. 2 is the embodiment of the present invention 2: obtained the multi-wavelength mid-infrared Optical Parametric of additional temperature modulation by double TEC differential concatenations
Amount oscillator principle schematic diagram；
Fig. 3 is the embodiment of the present invention 3: realized the multi-wavelength mid-infrared optical parameter of temperature modulation by additional coaxial absorption light source
Oscillator principle schematic diagram；
Fig. 4 is the embodiment of the present invention 4: realized the multi-wavelength mid-infrared optical parametric oscillator of temperature modulation by crystal self-absorption
Principle schematic；
Fig. 5 is the embodiment of the present invention 5: realize in the multi-wavelength of temperature modulation red by introducing side non-uniform irradiation absorption light source
Outer optical parametric oscillator principle schematic；
Fig. 6 is the embodiment of the present invention 6: the multi-wavelength mid-infrared optical parametric oscillator principle realized by impressed pressure modulation is shown
It is intended to；
Fig. 7 is the embodiment of the present invention 7: the multi-wavelength mid-infrared optical parametric oscillator principle realized by extra electric field modulation is shown
It is intended to；
In figure: 1, pump light source；2, high reflective cavity mirror；3, periodically poled lithium niobate (PPLN) crystal；4, output cavity mirror；
5, forward accesses semiconductor cooler (TEC)；6, DC source；7, semiconductor cooler (TEC) is reversely accessed；8、
Additional absorption light source；9, light combination mirror；10, shaping mirror；11, micro positioner；12, micro-displacement driver；13, Electric Field Modulated
Device；14, power supply is driven.
Fig. 8 is embodiment 1 experimental result: Output of laser spectrogram (a) near infrared band spectrum；(b) middle-infrared band spectrum；
Fig. 9 is embodiment 4 experimental result: Output of laser spectrogram (a) near infrared band spectrum；(b) middle-infrared band spectrum；
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, technical scheme is described in further detail.
Accompanying drawing 1 is the embodiment of the present invention 1: accesses TEC by forward and realizes the multi-wavelength mid-infrared Optical Parametric of additional temperature modulation
The principle schematic of amount agitator.In this embodiment, pump light source 1 provides frequency to be ω for systempPump light, pump light is incident
In the resonator cavity being made up of high reflective cavity mirror 201 and output cavity mirror 202, wherein additive mixing crystal 3 is monocycle PPLN
Crystal, its cycle is Λ.Additive mixing crystal 3 second half section is fixed on and is accessed, by forward, the local indexes of refraction that TEC 401 forms
On modulating system 4, described local indexes of refraction modulating system 4 is powered by DC source 402, by changing DC source 402
Size of current can change forward and access the surface temperature of TEC401, and the different temperature of formation additive mixing crystal 3 in
Degree distribution ultimately results in the index modulation occurring local in additive mixing crystal 3.
When DC source 402 does not works, according to formula (2), the resonator cavity being made up of high reflective cavity mirror 201 output cavity mirror 202 is only
Producing a frequency is ωsNear infrared signal light generation, and with pump light ωpIt is ω that difference frequency obtains a frequencyiMid-infrared ideler frequency
Light exports.Flashlight ω in resonator cavitysPower is far above pump light ωp, due to the Raman effect of additive mixing crystal 3 self,
Flashlight ω will be produced in resonator cavitysSingle order Raman light ωr1, control high reflective cavity mirror 201 and output cavity mirror 202 reflectance and
Bandwidth, can make ωr1Vibration is set up equally in resonator cavity.Now there are two groups of near-infrared laser ω in resonator cavity simultaneouslyr1With ωsVibration
And only a frequency is ωiMid-infrared laser output.
Change the output electric current of DC source 402, thus it is possible to vary forward accesses TEC 401 surface temperature so that it is surface temperature becomes
For T2, now the head temperature of additive mixing crystal 3 is still temperature T, and rear end temperature becomes T2, and T2Meet formula (3):
Formula (3) i.e. pump light ωpSingle order Raman light ω with flashlightr1Efficiently the phase-matching condition of difference frequency, now can obtain
Mid-infrared difference frequency light ωd1Stable output.System complete machine will be carried out two groups of near-infrared laser ωr1With ωsOutput, and ωiWith
ωd1The mid-infrared laser output of two wavelength.
It is ω that pump light source 1 as above is used for providing frequencypPump light, can be pulsed laser light source, it is also possible to be even
Continuous LASER Light Source.
High reflective cavity mirror 201 as above and output cavity mirror 202 constitute resonator cavity, are used for providing flashlight ωsAnd flashlight
Single order Raman light ωr1Feedback and set up vibration, can be standing-wave cavity can also be travelling-wave cavity, it is also possible to by multiaspect chamber mirror or with
Class functional device replaces.
PPLN as above is the additive mixing crystal of quasi-phase matched, for providing three kinds of machine-processed laser gains: logical
Crossing phase matched mode is pump light ωpIdeler frequency light ω is produced with flashlightiOptical parameter process provide gain, by crystal self
Raman effect be flashlight ωsProduce one-level Raman light ωr1Process provides gain, is pump light ω by phase matched modepWith draw
Graceful smooth ωr1Difference frequency produces ωd1Process provide gain.PPLN can be replaced by the device with similar function, can be quasi-phase place
Matched crystal can also be birefringent phase matching crystal, include but not limited to KTP, KDP, BBO, KTA, PPLN,
The nonlinear crystals such as PPMgLN, PPLT, ZGP, PPKTP.
Forward accesses the local indexes of refraction modulating system 4 of TEC 401 and DC source 402 composition for non-linear as mentioned above
Frequency-changer crystal is internal to be produced index distribution and makes it both meet formula (2) also to meet formula (3), and forward accesses TEC 401 and is used for making non-
Linear frequency-changer crystal produces temperature difference, can replace with the device of similar function, including but not limited to resistance wire, refrigerator, add
Hot stove etc..
Accompanying drawing 2 is the embodiment of the present invention 2: obtained the multi-wavelength mid-infrared optics of additional temperature modulation by double TEC differential concatenations
The principle schematic of parametric oscillator.This embodiment is accessed TEC 401 by forward and reversely accesses TEC 403 and DC source
402 collectively form local indexes of refraction modulating system 4, and PPLN crystal first half section is fixed on and reversely accesses on TEC 401, the second half section
It is fixed on forward and accesses on TEC 403, DC source 402 access TEC401 and the reverse TEC 403 that accesses to forward and power,
The size of current changing DC source 402 can change forward access TEC 401 and reversely access the surface temperature of TEC 403,
And formed in PPLN crystal different Temperature Distribution ultimately result in PPLN crystal occurs local index modulation, with reality
Executing example 1 scheme to compare, embodiment 2 is conducive to realizing multiple different temperature field in crystal, thus realizes swashing of more multi-wavelength
Light exports.
Accompanying drawing 3 is the embodiment of the present invention 3: realized the multi-wavelength mid-infrared Optical Parametric of temperature modulation by additional coaxial absorption light source
The principle schematic of amount agitator.In this embodiment, additional absorption light source 401 is entered after pumping combiner by light combination mirror 402
Penetrate PPLN crystal, absorb light source 401 and form local indexes of refraction modulating system 4, owing to PPLN crystal is to suction with light combination mirror 402
The light existence that receipts light source 401 is sent absorbs more by force, can form the Temperature Distribution that height rear end, front end is low, change in PPLN crystal
The Temperature Distribution of PPLN crystal can be modulated by the intensity and the radiation wavelength that become absorption light source 401.
The light source 401 that absorbs as above is positioned at the light source of PPLN absorption of crystal wave band used for wavelength, can be infra-red radiation
Source can also be visible light source or ultraviolet source, includes but not limited to the CO2 laser of 10.6 microns, the quanta cascade of 4～5 microns
Laser, the blackbody radiation source etc. of infrared band.
Light combination mirror 402 as above is used for pump light and absorbs combiner, can be polarization coupling mirror, it is also possible to be spectrum
Light combination mirror, it is also possible to be space light combination mirror, including but not limited to polaroid, grating, dichroscope etc..
Accompanying drawing 4 is the embodiment of the present invention 4: realized the multi-wavelength mid-infrared optical parametric oscillator of temperature modulation by crystal self-absorption
Device principle schematic.The difference of embodiment 4 and above three embodiments is 2 points:
(1), in this experiment, resonator cavity uses the four sides chamber i.e. high reflective cavity mirror 201,203,204 of mirror and output cavity mirror 202 makeup ring
Shape cavity configuration；
(2), the local indexes of refraction modulating system 4 of this embodiment be that the self absorption effect utilizing additive mixing crystal 3 realizes,
This embodiment is only applicable to additive mixing crystal to ideler frequency light ωiWhen there is certain assimilation effect.In this embodiment, pump light ωp
Incident PPLN crystal, setting up frequency in resonator cavity is ωsFlashlight vibration, and with pump light ωpIt is ω that difference frequency produces frequencyi
The ideler frequency light output of middle-infrared band.Owing to PPLN crystal 3 is to ideler frequency light ωiThere is self absorption effect, non-linear change can be caused
Frequently forming head temperature in crystal 3 low, the Temperature Distribution that rear end temperature is high, when Temperature Distribution meets formula (3) i.e. pump light ωpWith
Flashlight Raman light ωr1Efficiently during beat frequency phase matching condition, it is possible to obtain mid-infrared difference frequency light ωd1Stable output.System complete machine
Two groups of near-infrared laser ω will be realizedsWith ωr1Output, and ωsAnd ωd1The mid-infrared laser output of two wavelength.
Accompanying drawing 5 is the embodiment of the present invention 5: absorb in the multi-wavelength that light source realizes temperature modulation by introducing side non-uniform irradiation
The principle schematic of infrared optics parametric oscillator.In this embodiment, additional absorption light source 401 and shaping mirror 402 composition local
Index modulation system 4, additional absorption light source 401 is modulated to required intensity by radiating light source after shaping mirror 402 and divides
Cloth is also irradiated to the side of additive mixing crystal 3, owing to additive mixing crystal 3 is deposited absorbing the light that light source 401 sent
Absorbing more by force, additive mixing crystal 3 can formed default Temperature Distribution, changing form and the focal length etc. of shaping mirror 402
The Temperature Distribution of additive mixing crystal 3 can be modulated by parameter.
Shaping mirror 402 as above is for being modulated to required intensity distributions by the light field that absorption light source 401 radiates, permissible
Realized by phase-modulation, it is also possible to realized by intensity modulated, including but not limited to aspherical mirror group, attenuator group, difference
Plate group, spatial light modulator etc..
Accompanying drawing 6 is the embodiment of the present invention 6: multi-wavelength mid-infrared optical parametric oscillator former realized by impressed pressure modulation
Reason schematic diagram.In this embodiment, micro positioner 401 and micro-displacement driver 402 constitute local indexes of refraction modulating system 4, non-thread
Property frequency-changer crystal 3 second half section is fixed in micro positioner 401, micro-displacement driver 402 control the deformation of micro positioner 401
Size, can form different pressure distribution in additive mixing crystal 3, ultimately results in additive mixing crystal 3 and occurs
The index modulation of local.
Micro positioner 401 as above, for the pressure distribution applying to preset to additive mixing crystal, can be by extruding
Mode realizes, it is also possible to realized by stretching mode, including but not limited to piezo-ceramic micro displacement unit, motor etc..
Micro-displacement driver 402 as above is used for driving micro positioner 401 to produce micrometric displacement.
Accompanying drawing 7 is the embodiment of the present invention 7: multi-wavelength mid-infrared optical parametric oscillator former realized by extra electric field modulation
Reason schematic diagram.In this embodiment, Electric Field Modulated device 401 and driving power supply 402 constitute local indexes of refraction modulating system 4, non-linear
Frequency-changer crystal 3 second half section is fixed in Electric Field Modulated device 401, by the output electricity driving power supply 402 to control Electric Field Modulated device 401
Pressure, can form different Electric Field Distribution in additive mixing crystal 3, ultimately result in additive mixing crystal 3 and go out current situation
The index modulation in portion.
Electric Field Modulated device 401 as above is used for the Electric Field Distribution that additive mixing crystal applies preset, including but not limited to
Electrode is to, electrod-array etc..
Driving power supply 402 as above is used for driving electric field manipulator 401.
Accompanying drawing 8 is the experimental result of the embodiment of the present invention 1, measures multi-wavelength iraser of the present invention with near infrared spectrometer
Device Output of laser comprises the near-infrared laser output of three wavelength, is flashlight ω respectivelys(actual measurement wavelength 1602nm), flashlight
Single order Raman light ωr1(actual measurement wavelength 1617nm) and the second order Raman light ω of flashlightr2(actual measurement wavelength 1632nm), in using
The mid-infrared laser output that Output of laser comprises two wavelength measured by infrared spectrometer, is ideler frequency light ω respectivelyi(actual measurement wavelength
3129nm) and pump light ωp(actual measurement wavelength 1060nm) and flashlight Raman light ωr1The mid-infrared difference frequency that efficiently difference frequency obtains
Light ωd1(actual measurement wavelength 3074nm).The temperature difference formed in crystal in this experiment is the least, is therefore not carried out pump light ωpWith
Flashlight second order Raman light ωr2Difference frequency, only having obtained frequency is ωiAnd ωd1Dual wavelength mid-infrared laser output.
Accompanying drawing 9 is the experimental result of the embodiment of the present invention 4, measures multi-wavelength iraser of the present invention with near infrared spectrometer
Device Output of laser comprises the near-infrared laser output of two wavelength, measures Output of laser with mid-infrared light spectrometer and comprises two wavelength
Mid-infrared laser exports.
Claims (10)
1. based on crystal from the multi-wavelength mid-infrared optical parametric oscillator of Raman effect, it is characterised in that: red in described multi-wavelength
Outer optical parametric oscillator mainly includes pump light source, resonator cavity, additive mixing crystal, local indexes of refraction modulating system four
Part, it is ω that pump light source is used for providing frequencypNear-infrared pump light and incident resonator cavity in additive mixing crystal, humorous
It is ω that the intracavity that shakes sets up frequencysNear infrared signal light generation, and with pump light ωpIt is ω that difference frequency produces frequencyiMiddle-infrared band not busy
Frequently light output, ωi=ωp-ωs；Such as change cavity mirrors reflectivity, radius of curvature and position relatively by change resonator parameter to change
Flashlight ωsPower density so that it is produce flashlight ω in additive mixing crystalsSingle order Raman light ωr1；Pass through local refraction
Rate modulating system changes the phase-matching condition of additive mixing crystal, it is achieved pump light ωpAnd ωr1Difference frequency, export mid-infrared ripple
The difference frequency light ω of sectiond1, ωd1=ωp-ωr1。
The most according to claim 1, based on crystal from the multi-wavelength mid-infrared optical parametric oscillator of Raman effect, its feature exists
In: it is ω that described pump light source is used for providing frequencypPump light, can be pulsed laser light source, it is also possible to be continuous laser light
Source.
The most according to claim 1, based on crystal from the multi-wavelength mid-infrared optical parametric oscillator of Raman effect, its feature exists
In: described resonator cavity is made up of multiaspect chamber mirror, is used for providing flashlight ωsWith Raman light ωr1Feedback, set up flashlight ωsWith draw
Graceful smooth ωr1Vibration, can be standing-wave cavity, it is also possible to be travelling-wave cavity.
The most according to claim 1, based on crystal from the multi-wavelength mid-infrared optical parametric oscillator of Raman effect, its feature exists
In: it is pump light ω that described additive mixing crystal is used for by phase matched modepWith flashlight ωsProduce ideler frequency light ωiProcess
Gain is provided, is flashlight ω by the Raman effect of crystal selfsProduce the graceful smooth ω of single orderr1Process provides gain and passes through phase place
Matching way is pump light ωpWith Raman light ωr1Difference frequency produces ωd1Process provide gain, can be quasi-phase-matching crystals, also
It can be birefringent phase matching crystal.
The most according to claim 1, based on crystal from the multi-wavelength mid-infrared optical parametric oscillator of Raman effect, its feature exists
In: described local indexes of refraction modulating system, for forming default index distribution at additive mixing crystals, makes non-linear
Frequency-changer crystal can meet pump light ω simultaneouslypWith flashlight ωsDifference frequency produces ideler frequency light ωiPhase-matching condition, and pump light
ωpWith Raman light ωr1Difference frequency produces the laser ω of middle-infrared bandd1Phase-matching condition.
The most according to claim 5, based on crystal from the multi-wavelength mid-infrared optical parametric oscillator of Raman effect, its feature exists
In: described local indexes of refraction modulating system is by preparation process additive mixing crystals introduce local indexes of refraction be distributed into
Row modulation.
The most according to claim 5, based on crystal from the multi-wavelength mid-infrared optical parametric oscillator of Raman effect, its feature exists
In: described local indexes of refraction modulating system controls additive mixing crystal boundaries generation temperature by introducing partial temperature control device
Difference is modulated.
The most according to claim 5, based on crystal from the multi-wavelength mid-infrared optical parametric oscillator of Raman effect, its feature exists
In: described local indexes of refraction modulating system can have the relatively strong absorption light source absorbed or utilization by additional additive mixing crystal
The self absorption effect that ideler frequency light exists is made crystals formation temperature difference distribution be modulated by crystal.
The most according to claim 5, based on crystal from the multi-wavelength mid-infrared optical parametric oscillator of Raman effect, its feature exists
In: described local indexes of refraction modulating system is by being modulated additive mixing crystal extra electric field or pressure field.
10. according to described in any claim in claim 1 to 9 based on crystal from the multi-wavelength mid-infrared optics of Raman effect
Parametric oscillator, it is characterised in that: described multi-wavelength mid-infrared optical parametric oscillator can also be by changing resonator parameter such as
Change cavity mirrors reflectivity, radius of curvature and position relatively and change flashlight ωsPower density so that it is at additive mixing crystal
Middle generation flashlight ωsSingle order and Higher-order Raman light ωr1、ωr2、ωr3、ωr4..., change non-by local indexes of refraction modulating system
The phase-matching condition of linear frequency-changer crystal, it is achieved pump light ωpWith flashlight ωsSingle order and the difference frequency of Higher-order Raman light, output
The multi-wavelength difference frequency light ω of middle-infrared bandd1、ωd2、ωd3、ωd4..., wherein ωdj=ωp-ωrj, j=1,2,3.......
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| CN112733375B (en) * | 2021-01-15 | 2022-05-31 | 中国科学院上海光学精密机械研究所 | Thin film element time domain dynamic electric field simulation method based on multi-wavelength effect |
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