CN105932148B - A kind of Ag doping Emission in Cubic Ca2Si thermoelectric materials - Google Patents
A kind of Ag doping Emission in Cubic Ca2Si thermoelectric materials Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 56
- 229910014526 Ca2Si Inorganic materials 0.000 title claims abstract description 18
- 239000000843 powder Substances 0.000 claims abstract description 42
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 26
- 239000010935 stainless steel Substances 0.000 claims abstract description 26
- 239000000203 mixture Substances 0.000 claims abstract description 22
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 14
- 238000005245 sintering Methods 0.000 claims abstract description 14
- 239000010959 steel Substances 0.000 claims abstract description 14
- 238000000227 grinding Methods 0.000 claims abstract description 11
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 10
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 8
- 239000010944 silver (metal) Substances 0.000 claims abstract description 8
- 238000005054 agglomeration Methods 0.000 claims abstract description 6
- 230000002776 aggregation Effects 0.000 claims abstract description 6
- 238000000498 ball milling Methods 0.000 claims abstract description 6
- 238000002156 mixing Methods 0.000 claims abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 238000011068 loading method Methods 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 2
- 238000010792 warming Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000002604 ultrasonography Methods 0.000 claims 1
- 230000005619 thermoelectricity Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract description 3
- 150000001342 alkaline earth metals Chemical class 0.000 abstract description 3
- 238000006467 substitution reaction Methods 0.000 abstract description 2
- 239000002772 conduction electron Substances 0.000 abstract 1
- 239000011575 calcium Substances 0.000 description 25
- 239000007789 gas Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- OSMSIOKMMFKNIL-UHFFFAOYSA-N calcium;silicon Chemical compound [Ca]=[Si] OSMSIOKMMFKNIL-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000009646 cryomilling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005551 mechanical alloying Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000012995 silicone-based technology Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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Abstract
The invention discloses a kind of Ag doping Emission in Cubic Ca2Si thermoelectric materials; its be by Ca powder, Si powder and Ag powder under Ar gas shielded atmosphere after mixing; gained mix powder is put into Stainless Steel Vacuum ball grinder with grinding steel ball in Ar gas shielded atmosphere and is sealed; vacuum-sintering tabletting is carried out by the way of plasma agglomeration after ball-milling reaction, up to sheet Ag doping Emission in Cubic Ca2Si thermoelectric materials.Since Ag elements have the property similar with alkaline-earth metal, after Ag elements add, easily substitution Ca, as donor doping, there is provided conduction electrons is as carrier, so as to improve the electrical conductivity and thermoelectricity capability of material.The present invention has the advantages such as technique is simple, operation is easy, cost is low, gained Ag doping Emission in Cubic Ca2Si thermoelectric material purity is higher, is tightly combined, and has preferable industrialization prospect.
Description
Technical field
The invention belongs to thermoelectricity technical field of function materials, and in particular to a kind of Ag doping Emission in Cubic Ca2Si thermoelectric materials.
Background technology
Thermoelectric material is a kind of environmental type functional material that can be realized thermal energy and electric energy and directly mutually change；The temperature difference
Electrical part can realize the mutual conversion between thermal energy and electric energy, be the very wide environmental type energy device of the scope of application.Partly to lead
The semiconductor generator and refrigerator of body temperature-difference power generation module manufacture, as long as can generate electricity with the presence of the temperature difference, when power supply, can carry out
Refrigeration, when its work, are noiseless, pollution-free, and service life can be widely applied to waste-heat power generation, refrigeration for refrigerator etc. more than 10 years
In important base application, thus it is a kind of widely used green energy resource device.Currently, due to being limited by pyroelectric material performance
System, the application of thermo-electric device are also far from reaching the stage for substituting mechanical refrigerator, this becomes thermo-electric device large-scale application
Bottleneck, therefore high performance thermoelectric material is one of hot subject of current international material research field.The performance of thermoelectric material
Mainly characterized by dimensionless figure factor Z T values：ZT=Tσα2/ κ, wherein T are absolute temperature, and σ is the electrical conductivity of material, and α is
Seebeck coefficients, κ are thermal conductivity.
At present first its excellent performance of procatarxis such as Ga, As, In, Pb, Te and be widely used in manufacturing semi-conducting material and partly lead
Body device, but these elements are largely poisonous, and resource faces exhaustion.Reserves are big on earth for the elements such as Fe, Si, Ca,
It is harmless to organism.Alkaline earth metal silicide Ca2Si materials, its direct band gap are about 0.31eV, are extremely long by resource longevity
Ca, Si element form, and can recycle, pollution-free to the earth, and due to calcium silicon compound Ca2Si has with existing silicon-based technologies
Excellent compatibility, it is considered to be very promising novel environmental close friend semi-conducting material, in solar cell and thermoelectricity
The fields such as conversion have potential application prospect.
From the point of view of current research conditions both domestic and external, related Emission in Cubic Ca2The research of Si, which is all that theoretical calculation is relevant, grinds
Study carefully, to Ca2The rare report of theoretical research of Si doping.Can effectively it be changed in the unit cell volume and structure cell of optical material by doping
The crystallography position of each atom, modulates the electronic structure of material, so as to change the electrical property of material.Present invention incorporates low temperature
Mechanical alloying method and electrion plasma vacuum sintering process, enable material reacted at a lower temperature and
More sinter the Ag doping Emission in Cubic Ca of densification under the vacuum environment of high pressure low temperature into2Si, is expected to the thermoelectricity material as middle warm area
One of material, is widely used in every field.At present, on Ag doping Emission in Cubic Ca2The still nearly no report of Si thermoelectric materials.
The content of the invention
It is an object of the invention to provide a kind of operating procedure is simple, the manageable Ag doping Emission in Cubic of product component
Ca2Si thermoelectric materials, it is by adulterating Ag, to improve Ca2The carrier concentration of Si materials, thus improve material electrical conductivity and
Thermoelectricity capability.
To achieve the above object, the present invention adopts the following technical scheme that：
A kind of Ag doping Emission in Cubic Ca2Si thermoelectric materials, its preparation method comprise the following steps：
1）Ca powder, Si powder and Ag powder are uniformly mixed under Ar gas shielded atmosphere, obtain mix powder；
2）Under Ar gas shielded atmosphere, by step 1）Gained mix powder is put into Stainless Steel Vacuum ball milling with grinding steel ball
In tank, sealing；
3）By step 2）Ready Stainless Steel Vacuum ball grinder is put into ball mill, with the rotating speed ball of 500 ~ 2000 rpm
5 ~ 100 h are ground, mix powder is fully reacted；
4）By step 3）Completely reacted powder takes out, in the stainless steel mould of specification needed for loading, using plasma agglomeration
Mode, be warming up to 100 ~ 500 DEG C under the pressure of 50 ~ 600 MPa, keep 10 ~ 120 min to carry out vacuum-sintering tabletting, i.e.,
Obtain sheet Ag doping Emission in Cubic Ca2Si thermoelectric materials.
Step 1）Middle Ca powder, Si powder and Ag powder are 81 by the molar ratio of Ca, Si, Ag:20:0.5 ~ 10 is mixed.
Step 2）The weight ratio of middle grinding steel ball and mix powder is 2 ~ 16:1；The particle diameter of the grinding steel ball for 0.2 ~
1.5 cm, carry out ultrasonic cleaning, ultrasonic cleaning total time is 10 ~ 30 min using acetone, alcohol successively using preceding.
Step 4）The speed of middle heating is 5 ~ 20 DEG C/min.
The present invention has the following advantages compared with prior art：
（1）Handled in sintering process of the present invention using stainless steel mould is supporting, so as at a lower temperature
Higher sintering pressure is born, the oxidation and volatilization of the Ca often occurred in sintering process is efficiently controlled, makes products obtained therefrom component
Purer, density is higher.
（2）Gained Ag doping Ca of the invention2The thermoelectricity capability of Si matrix bodies is better than existing Ca2Si materials, its mechanism are Ag
Element has the property similar with alkaline-earth metal, after Ag elements add, easily substitution Ca, as donor doping, there is provided lead
Electronics is as carrier, so as to improve the electrical conductivity and thermoelectricity capability of material.
（3）The present invention is combined using Cryomilling and plasma discharging vaccum sintering process prepares Ag doping cube
Phase Ca2Si thermoelectric materials, its technique is simple, and operation is easy, and reaction temperature is relatively low, is less prone to the oxidation reaction of Ca atoms
And Ca2The decomposition of Si phases.Meanwhile it is when can be by controlling the atomic ratio of Ca, Si and Ag, sintering temperature, heating rate and heating
Between etc., realize that component is controllable, to meet to mass produce needs, and reduce cost.
Brief description of the drawings
Fig. 1 is undoped with Ag（a）With doping Ag（b）Ca2The scanning electron microscope (SEM) photograph of Si thermoelectric materials.
Fig. 2 is undoped with Ag（a）With doping Ag（b）Ca2The transmission electron microscope picture of Si thermoelectric materials.
Embodiment
In order to make content of the present invention easily facilitate understanding, with reference to embodiment to of the present invention
Technical solution is described further, but the present invention is not limited only to this.
The particle diameter of grinding steel ball used is 0.2 ~ 1.5 cm, and ultrasonic cleaning is carried out using acetone, alcohol successively using preceding,
Ultrasonic cleaning total time is 10 ~ 30 min.
Embodiment 1
A kind of Ag doping Emission in Cubic Ca2The preparation method of Si thermoelectric materials comprises the following steps：
1）It is 81 by the molar ratio that Ca powder, Si powder and Ag powder press Ca, Si, Ag:20:0.5 mixes under Ar gas shielded atmosphere
Uniformly, mix powder is obtained；
2）By step 1）Gained mix powder, grinding steel ball, Stainless Steel Vacuum ball grinder and electronic balance are put into and fill
In the glove box for having an atmospheric pressure Ar gas；By weight 3 in glove box:1 accurate weigh grinds steel ball and mix powder,
And put it into Stainless Steel Vacuum ball grinder, then by Stainless Steel Vacuum ball grinder good seal, enter to avoid oxygen；Then
Stainless Steel Vacuum ball grinder is taken out from glove box；
3）By step 2）Ready Stainless Steel Vacuum ball grinder is put into ball mill, with the rotating speed ball milling 5 of 2000 rpm
H, makes mix powder fully react；
4）By step 3）Completely reacted powder takes out, in the stainless steel mould of specification needed for loading, using plasma agglomeration
Mode, the heating rate of 5 DEG C/min is pressed under the pressure of 300 MPa, temperature is risen to 300 DEG C, keeps 120 min to carry out
Vacuum-sintering tabletting, up to sheet Ag doping Emission in Cubic Ca2Si thermoelectric materials.
Embodiment 2
A kind of Ag doping Emission in Cubic Ca2The preparation method of Si thermoelectric materials comprises the following steps：
1）It is 81 by the molar ratio that Ca powder, Si powder and Ag powder press Ca, Si, Ag:20:10 mix under Ar gas shielded atmosphere
It is even, obtain mix powder；
2）By step 1）Gained mix powder, grinding steel ball, Stainless Steel Vacuum ball grinder and electronic balance are put into and fill
In the glove box for having an atmospheric pressure Ar gas；By weight 8 in glove box:1 accurate weigh grinds steel ball and mix powder,
And put it into Stainless Steel Vacuum ball grinder, then by Stainless Steel Vacuum ball grinder good seal, enter to avoid oxygen；Then
Stainless Steel Vacuum ball grinder is taken out from glove box；
3）By step 2）Ready Stainless Steel Vacuum ball grinder is put into ball mill, with the rotating speed ball milling 50 of 1000 rpm
H, makes mix powder fully react；
4）By step 3）Completely reacted powder takes out, in the stainless steel mould of specification needed for loading, using plasma agglomeration
Mode, the heating rate of 10 DEG C/min is pressed under the pressure of 600 MPa, temperature is risen to 100 DEG C, keeps 60 min to carry out
Vacuum-sintering tabletting, up to sheet Ag doping Emission in Cubic Ca2Si thermoelectric materials.
Fig. 1 is undoped with Ag（a）The doping Ag prepared with embodiment 2（b）Ca2The scanning electron microscope (SEM) photograph of Si thermoelectric materials.
Doped with the modification Ca of Ag elements it can be seen from the contrast of Fig. 1 patterns2It is finer and close after Si thermoelectric materials sintering, and surface is more
To be smooth, be conducive to improve the electric conductivity of material.
Fig. 2 is undoped with Ag（a）The doping Ag prepared with embodiment 2（b）Ca2The transmission electron microscope picture of Si thermoelectric materials.
Doped with the modification Ca of Ag elements it can be seen from the contrast of Fig. 2 transmission scans pattern2The nanoparticle edge of Si thermoelectric materials is more
To be smooth, it is conducive to the consistency and carrier mobility speed that improve material sintering, so as to improve the electric conductivity of material.
Embodiment 3
A kind of Ag doping Emission in Cubic Ca2The preparation method of Si thermoelectric materials comprises the following steps：
1）It is 81 by the molar ratio that Ca powder, Si powder and Ag powder press Ca, Si, Ag:20:6 mix under Ar gas shielded atmosphere
It is even, obtain mix powder；
2）By step 1）Gained mix powder, grinding steel ball, Stainless Steel Vacuum ball grinder and electronic balance are put into and fill
In the glove box for having an atmospheric pressure Ar gas；By weight 16 in glove box:1 accurate weigh grinds steel ball and mixture powder
End, and put it into Stainless Steel Vacuum ball grinder, then by Stainless Steel Vacuum ball grinder good seal, enter to avoid oxygen；
Stainless Steel Vacuum ball grinder is then taken out from glove box；
3）By step 2）Ready Stainless Steel Vacuum ball grinder is put into ball mill, with the rotating speed ball milling 100 of 500 rpm
H, makes mix powder fully react；
4）By step 3）Completely reacted powder takes out, in the stainless steel mould of specification needed for loading, using plasma agglomeration
Mode, the heating rate of 20 DEG C/min is pressed under the pressure of 50 MPa, temperature is risen to 500 DEG C, keeps 20 min to carry out
Vacuum-sintering tabletting, up to sheet Ag doping Emission in Cubic Ca2Si thermoelectric materials.
The EDAX results of the thermoelectric material obtained by embodiment 1-3 of table 1.
1 EDAX results of table
The Ag obtained by embodiment 1-3 of table 2 adulterates Emission in Cubic Ca2The electrical property measurement result of Si thermoelectric materials.
2 Ag of table doping Emission in Cubic Ca2The electrical property measurement result of Si thermoelectric materials
Material doped Ag is modified it can be seen from being contrasted in table 2, is still rendered as P-type semiconductor, while can carry
The mobility in hole is improved on the basis of high carrier concentration, the electric conductivity for improving material, so as to improve thermoelectricity capability
Play the role of important.
The foregoing is merely presently preferred embodiments of the present invention, all equivalent changes done according to scope of the present invention patent with
Modification, should all belong to the covering scope of the present invention.
Claims (4)
- A kind of 1. Ag doping Emission in Cubic Ca2Si thermoelectric materials, it is characterised in that：Its preparation method comprises the following steps：1）Ca powder, Si powder and Ag powder are uniformly mixed under Ar gas shielded atmosphere, obtain mix powder；2）Under Ar gas shielded atmosphere, by step 1）Gained mix powder is put into Stainless Steel Vacuum ball grinder with grinding steel ball In, sealing；3）By step 2）Ready Stainless Steel Vacuum ball grinder is put into ball mill, with the rotating speed ball milling 5 of 500 ~ 2000 rpm ~ 100 h, make mix powder fully react；4）By step 3）Completely reacted powder takes out, in the stainless steel mould of specification needed for loading, using the side of plasma agglomeration Formula, is warming up to 100 ~ 500 DEG C under the pressure of 50 ~ 600 MPa, keeps 10 ~ 120 min to carry out vacuum-sintering tabletting, up to piece Shape Ag doping Emission in Cubic Ca2Si thermoelectric materials.
- 2. Ag doping Emission in Cubic Ca as claimed in claim 12Si thermoelectric materials, it is characterised in that：Step 1）Middle Ca powder, Si powder and Ag powder is 81 by the molar ratio of Ca, Si, Ag:20:（0.5~10）Mixed.
- 3. Ag doping Emission in Cubic Ca as claimed in claim 12Si thermoelectric materials, it is characterised in that：Step 2）Middle grinding steel ball is with mixing The weight ratio of compound powder is（2~16）:1；The particle diameter of the grinding steel ball is 0.2 ~ 1.5 cm, and ultrasonic cleaning, ultrasound are carried out using acetone, alcohol successively using preceding Ripple cleaning total time is 10 ~ 30 min.
- 4. Ag doping Emission in Cubic Ca as claimed in claim 12Si thermoelectric materials, it is characterised in that：Step 4）The speed of middle heating For 5 ~ 20 DEG C/min.
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| CN110451512B (en) * | 2019-08-30 | 2022-07-12 | 福州大学 | Two-dimensional Al-doped Ca2Si nano-film material and liquid phase stripping method thereof |
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| CN105220119A (en) * | 2015-10-27 | 2016-01-06 | 福州大学 | A kind of Ag doped with Mg 2si base thermal electric film and preparation method thereof |
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| Title |
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| Thermoelectric Characteristics of a Commercialized Mg2Si Source Doped with Al, Bi, Ag, and Cu;TATSUYA SAKAMOTO等;《Journal of ELECTRONIC MATERIALS》;20100224;第39卷(第9期);全文 * |
| 用低温固相反应制备p 型Mg2Si 基热电材料;姜洪义 等;《硅酸盐学报》;20040930;第32卷(第9期);全文 * |
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